CN114268289A - Method for stripping metal film by using double-layer negative photoresist as mask - Google Patents
Method for stripping metal film by using double-layer negative photoresist as mask Download PDFInfo
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- CN114268289A CN114268289A CN202111512360.6A CN202111512360A CN114268289A CN 114268289 A CN114268289 A CN 114268289A CN 202111512360 A CN202111512360 A CN 202111512360A CN 114268289 A CN114268289 A CN 114268289A
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Abstract
The invention discloses a method for stripping a metal film by using a double-layer negative photoresist as a mask, which comprises the following steps: 1) spin-coating a primer with a CP value of 25 +/-1 on the cleaned substrate, and then carrying out primary baking on the substrate coated with the primer, wherein the baking temperature is controlled to be 115-125 ℃, and the baking time is controlled to be 100 +/-2 s; 2) spin-coating a surface adhesive with a CP value of 12 +/-1 on the substrate, and carrying out secondary baking, wherein the baking temperature is controlled to be 120-130 ℃, and the baking time is controlled to be 100s +/-2 s; 3) the exposure was carried out using UV on an exposure machine at an exposure of 120mj/cm2(ii) a 4) After PEB and development, plating a metal film in a film plating machine by adopting an electron beam evaporation plating mode; 5) stripping in NMP solvent at 75 + -3 deg.C under standard atmospheric pressure, wherein the primer is photo-crosslinking type negative adhesive, and the surface adhesive is photo-polymerization type negative adhesive. The stripping method has stable process, the obtained product has low fragment rate, the glue layer is not easy to collapse, and the interdigital strip-shaped edge is more excellent.
Description
Technical Field
The invention relates to the technical field of electricity and nano processing, in particular to a method for stripping a metal film by using a double-layer negative adhesive as a mask.
Background
With the coming of the new generation of mobile communication era, a Surface Acoustic Wave Filter (SAWF) is widely applied to radio frequency mobile communication, the technology of a surface acoustic wave chip is rapidly developing, and new research and new discovery of the technology become important points.
The traditional metal film stripping process adopts either single-layer negative glue or double-layer glue. The existing single-layer negative adhesive needs to reach high resolution, so the adhesive layer needs to be thin enough, and when a thick metal film layer is needed, the adhesive is difficult to be peeled cleanly or even cannot be peeled; with a dual layer photoresist stripping process, as shown in fig. 3, a specific stripping step includes applying a primer 2 'to a substrate 1', where the primer is typically a conventional negative photoresist, then, a surface glue 3' is coated on the base glue 2', wherein the surface glue 3' is generally a layer of non-photosensitive glue, then the metal coating 4' is plated after exposure, PEB baking and development, and finally peeled off, because the primer is non-photosensitive glue, the primer is easy to react with the developing solution, the PEB baking temperature is very high (reaching 250-260 ℃), because of the technical requirements of our products, the substrate is very thin (0.2-0.25 mu m), the baking temperature is fragile at 250 ℃ and above, especially when the 0.2 mu m substrate is used for production, the sample is very fragile when entering and exiting the hot plate, the experiment verifies that the fragment rate (about 2000 samples) reaches 15-20%, the price of the primer is generally more than twice of that of the negative adhesive, and the production cost is very high; and because the performance influences the process latitude of the bottom layer non-photosensitive glue to be low, the upper layer glue is easy to collapse (as shown in figure 4) due to serious faults caused by excessive development time or temperature difference, and the stripping cannot be caused. The above technical problems are the ones that the skilled person is dedicated to solve.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a method for stripping a metal film by using a double-layer negative photoresist as a mask.
In order to achieve the purpose, the invention adopts the technical scheme that: a method for stripping a metal film by using a double-layer negative photoresist as a mask comprises the following steps:
1) spin-coating a primer with a CP value of 25 +/-1 on the cleaned substrate, and then carrying out primary baking on the substrate coated with the primer, wherein the baking temperature is controlled to be 115-125 ℃, and the baking time is controlled to be 100 +/-2 s;
2) spin-coating a surface adhesive with a CP value of 12 +/-1 on the substrate, and carrying out secondary baking, wherein the baking temperature is controlled to be 120-130 ℃, and the baking time is controlled to be 100s +/-2 s;
3) the exposure was carried out using UV on an exposure machine at an exposure of 120mj/cm2；
4) After PEB and development, plating a metal film on the upper surface of the surface glue by adopting an electron beam evaporation mode in a film plating machine;
5) stripping metal film in NMP solvent at 75 + -3 deg.C and standard atmospheric pressure,
wherein, the bottom glue adopts photo-crosslinking negative glue, and the surface glue adopts photo-polymerization negative glue.
As a specific implementation mode, the bottom glue is made of any one of the photoresists which are produced by FUTUREX corporation and have the models of NR9-250PY, NR9-500PY, NR9-1000PY and NR9-3000 PY.
As a specific implementation mode, the photoresist which is manufactured by Jiangsu Hantu optical materials Co., Ltd and is of the type AZ5510 is selected as the surface adhesive.
As a specific implementation mode, the rotating speed of the spin coating in the step 1) is 2000r/min-3000 r/min.
As a specific implementation mode, the rotation speed of the spin coating in the step 2) is 5500-2500 r/min.
As a specific embodiment, the thickness ratio of the primer to the surface glue is 2: 1-3: 1; the thickness ratio of the primer to the metal film plated in the step 5) is 1.5: 1-2.5: 1.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
the bottom glue adopts the photo-crosslinking negative glue, the surface glue adopts the photo-polymerization negative glue, the baking temperature of the two layers of glue is similar, the bottom glue is more easily dissolved in TMAH solution than the surface glue, and the problem that the single-layer glue film is not enough in thickness, so that the stripping is not clean or even can not be carried out is solved by adopting the two layers of negative photoresist; compared with the prior art that double-layer glue (one layer of negative glue and one layer of non-photosensitive glue) is adopted, the product has the advantages of stable process, low fragment rate, low cost, difficulty in collapse of the glue layer and better interdigital strip-shaped edge, and the fragment rate of the product below 150 ℃ is less than 1 per mill through production verification (a sample is 15000 pieces).
Drawings
FIG. 1 is a process flow diagram of a method for stripping a metal film by using a double-layer negative resist as a mask according to the present invention;
FIG. 2 is a schematic process diagram of a method for stripping a metal film by using a double-layer negative resist as a mask according to the present invention;
FIG. 3 is a schematic process diagram of a method for peeling a metal film by using a double-layer adhesive in the prior art;
FIG. 4 is a schematic illustration of the gum collapse after development in FIG. 3;
wherein: 1. a substrate; 2. base glue; 3. surface glue; 4. a metal film; 1', a substrate; 2', a primer; 3', surface glue; 4', a metal film.
Detailed Description
The technical solution of the present invention is further explained with reference to the drawings and the specific embodiments.
Example 1
In this embodiment, a method for stripping a metal film by using a double-layer negative resist as a mask is provided, as shown in fig. 1 and 2, including the following steps:
s01: spin-coating a base glue 2 with a CP value of 25 +/-1 on a cleaned substrate 1, wherein the base glue 2 adopts a photoresist which is produced by FUTUREX and has a model number of NR9-250PY, the spin-coating rotation speed is 2000r/min, the thickness is 0.4 mu m, and then, carrying out primary baking on the substrate 1 coated with the base glue 2, the baking temperature is 120 ℃, and the baking time is controlled to be 100 +/-2 s;
s02: spin-coating a surface adhesive 3 with a CP value of 12 +/-1 on the base adhesive 2, wherein the surface adhesive 3 is an AZ5510 photoresist produced by Jiangsu HanTuo optical materials Co., Ltd, the spin-coating rotation speed is 5500r/min, the thickness is 0.3 mu m, and secondary baking is carried out, the baking temperature is 125 ℃, and the baking time is controlled within 100s +/-2 s;
s03: the exposure was carried out using UV on an exposure machine at an exposure of 120mj/cm2；
S04: developing with PEB and developer;
s05: plating a metal film 4 on the upper surface of the face glue 3 in a coating machine in an electron beam evaporation mode, wherein the thickness of the metal film 4 is 750 nm;
s06: the peeling of the metal film 4 was completed in an NMP solvent at a temperature of 75. + -. 3 ℃ under a pressure of a standard atmospheric pressure.
The production verifies that the fragment rate of the sample (15000 pieces) below 150 ℃ is less than 1 per thousand.
Example 2
In this embodiment, a method for stripping a metal film by using a double-layer negative resist as a mask is provided, as shown in fig. 1 and 2, including the following steps:
s01: spin-coating a base glue 2 with a CP value of 25 +/-1 on a cleaned substrate 1, wherein the base glue 2 adopts a photoresist which is produced by FUTUREX corporation and is of a model number of NR9-500PY, the spin-coating rotating speed is 2000r/min and is 0.7 mu m, then carrying out primary baking on the substrate 1 coated with the base glue 2, the baking temperature is 115 ℃, and the baking time is controlled within 100 +/-2 s;
s02: spin-coating a surface adhesive 3 with a CP value of 12 +/-1 on the primer 2, wherein the surface adhesive 3 is an AZ5510 photoresist produced by Jiangsu Hantu optical materials Co., Ltd, the spin-coating rotation speed is 4500r/min, the thickness is 0.45 mu m, and secondary baking is carried out, the baking temperature is 120 ℃, and the baking time is controlled within 100s +/-2 s;
s03: the exposure was carried out using UV on an exposure machine at an exposure of 120mj/cm2；
S04: developing with PEB and developer;
s05: plating a metal film 4 on the upper surface of the face glue 3 by adopting an electron beam evaporation mode in a film plating machine, wherein the thickness of the metal film 4 is 0.5 mu m;
s06: the peeling of the metal film 4 was completed in an NMP solvent at a temperature of 75. + -. 3 ℃ under a pressure of a standard atmospheric pressure.
Example 3
The embodiment provides a method for stripping a metal film by using a double-layer negative photoresist as a mask, which comprises the following steps:
s01: spin-coating a base glue 2 with a CP value of 25 +/-1 on a cleaned substrate 1, wherein the base glue 2 is made of a photoresist which is produced by FUTUREX and is of a model number of NR9-1000PY, the spin-coating rotation speed is 3000r/min, the thickness is 1.2 mu m, then, carrying out primary baking on the substrate 1 coated with the base glue 2, the baking temperature is 122 ℃, and the baking time is controlled to be 100 +/-2 s;
s02: spin-coating a surface adhesive 3 with a CP value of 12 +/-1 on the primer 2, wherein the surface adhesive 3 is an AZ5510 photoresist produced by Jiangsu Hantu optical materials Co., Ltd, the spin-coating rotation speed is 3000r/min, the thickness is 0.70 mu m, and secondary baking is carried out, the baking temperature is 128 ℃, and the baking time is controlled within 100s +/-2 s;
s03: the exposure was carried out using UV on an exposure machine at an exposure of 120mj/cm2；
S04: developing with PEB and developer;
s05: plating a metal film 4 on the upper surface of the face glue 3 by adopting an electron beam evaporation mode in a film plating machine, wherein the thickness of the metal film 4 is 0.75 mu m;
s06: the peeling of the metal film 4 was completed in an NMP solvent at a temperature of 75. + -. 3 ℃ under a pressure of a standard atmospheric pressure.
Example 4
The embodiment provides a method for stripping a metal film by using a double-layer negative photoresist as a mask, which comprises the following steps:
s01: spin-coating a base glue 2 with a CP value of 25 +/-1 on a cleaned substrate 1, wherein the base glue 2 adopts a photoresist which is produced by FUTUREX and has a model number of NR9-3000PY, the spin-coating rotation speed is 4500r/min, the thickness is 2 mu m, then, carrying out primary baking on the substrate 1 coated with the base glue 2, the baking temperature is 125 ℃, and the baking time is controlled to be 100 +/-2 s;
s02: spin-coating a surface adhesive 3 with a CP value of 12 +/-1 on the primer 2, wherein the surface adhesive 3 is an AZ5510 photoresist produced by Jiangsu Hantu optical materials Co., Ltd, the spin-coating rotation speed is 2500r/min, the thickness is 1 mu m, and secondary baking is carried out, the baking temperature is 130 ℃, and the baking time is controlled within 100s +/-2 s;
s03: the exposure was carried out using UV on an exposure machine at an exposure of 120mj/cm2；
S04: developing with PEB and developer;
s05: plating a metal film 4 on the upper surface of the face glue 3 by adopting an electron beam evaporation mode in a film plating machine, wherein the thickness of the metal film 4 is 1.2 mu m;
s06: the peeling of the metal film 4 was completed in an NMP solvent at a temperature of 75. + -. 3 ℃ under a pressure of a standard atmospheric pressure.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (6)
1. A method for stripping a metal film by using a double-layer negative photoresist as a mask is characterized by comprising the following steps:
1) spin-coating a primer with a CP value of 25 +/-1 on the cleaned substrate, and then carrying out primary baking on the substrate coated with the primer, wherein the baking temperature is controlled to be 115-125 ℃, and the baking time is controlled to be 100 +/-2 s;
2) spin-coating a surface adhesive with a CP value of 12 +/-1 on the substrate, and carrying out secondary baking, wherein the baking temperature is controlled to be 120-130 ℃, and the baking time is controlled to be 100s +/-2 s;
3) the exposure was carried out using UV on an exposure machine at an exposure of 120mj/cm2；
4) After PEB and development, plating a metal film on the upper surface of the surface glue by adopting an electron beam evaporation mode in a film plating machine;
5) stripping metal film in NMP solvent at 75 + -3 deg.C and standard atmospheric pressure,
wherein, the bottom glue adopts photo-crosslinking negative glue, and the surface glue adopts photo-polymerization negative glue.
2. The method of claim 1, wherein the primer is a photoresist made of any one of the types NR9-250PY, NR9-500PY, NR9-1000PY, and NR9-3000PY from FUTUREX corporation.
3. The method of claim 1, wherein the photoresist type AZ5510 manufactured by Jiangsu Hantu optical materials GmbH is selected as the surface glue.
4. The method for stripping the metal film by using the double-layer negative photoresist as the mask of claim 1, wherein the spin coating speed in the step 1) is 2500 r/min.
5. The method for stripping the metal film by using the double-layer negative photoresist as the mask of claim 1, wherein the spin coating speed in the step 2) is 3000 r/min.
6. The method for stripping the metal film by using the double-layer negative photoresist as the mask according to claim 1, wherein the thickness ratio of the primer to the surface photoresist is 2: 1-3: 1; the thickness ratio of the primer to the metal film plated in the step 5) is 1.5: 1-2.5: 1.
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| CN202111512360.6A CN114268289A (en) | 2021-12-07 | 2021-12-07 | Method for stripping metal film by using double-layer negative photoresist as mask |
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| CN202111512360.6A CN114268289A (en) | 2021-12-07 | 2021-12-07 | Method for stripping metal film by using double-layer negative photoresist as mask |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116403889A (en) * | 2023-06-08 | 2023-07-07 | 润芯感知科技(南昌)有限公司 | Patterning method and method for manufacturing semiconductor structure |
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2021
- 2021-12-07 CN CN202111512360.6A patent/CN114268289A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116403889A (en) * | 2023-06-08 | 2023-07-07 | 润芯感知科技(南昌)有限公司 | Patterning method and method for manufacturing semiconductor structure |
| CN116403889B (en) * | 2023-06-08 | 2023-10-31 | 润芯感知科技(南昌)有限公司 | Patterning method and method for manufacturing semiconductor structure |
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