CN115198352A - Epitaxial growth method and epitaxial wafer - Google Patents

Epitaxial growth method and epitaxial wafer Download PDF

Info

Publication number
CN115198352A
CN115198352A CN202211019953.3A CN202211019953A CN115198352A CN 115198352 A CN115198352 A CN 115198352A CN 202211019953 A CN202211019953 A CN 202211019953A CN 115198352 A CN115198352 A CN 115198352A
Authority
CN
China
Prior art keywords
reaction chamber
epitaxial growth
epitaxial
cleaning
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202211019953.3A
Other languages
Chinese (zh)
Other versions
CN115198352B (en
Inventor
刘凯
王力
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
Original Assignee
Xian Eswin Silicon Wafer Technology Co Ltd
Xian Eswin Material Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Eswin Silicon Wafer Technology Co Ltd, Xian Eswin Material Technology Co Ltd filed Critical Xian Eswin Silicon Wafer Technology Co Ltd
Priority to CN202211019953.3A priority Critical patent/CN115198352B/en
Publication of CN115198352A publication Critical patent/CN115198352A/en
Priority to TW111140605A priority patent/TWI839916B/en
Application granted granted Critical
Publication of CN115198352B publication Critical patent/CN115198352B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)

Abstract

The embodiment of the invention discloses an epitaxial growth method and an epitaxial wafer; the epitaxial growth method comprises the following steps: cleaning stage of the reaction chamber: cleaning the reaction chamber by introducing chemical vapor etching gas into the reaction chamber; and (3) an epitaxial growth stage: putting the polished wafer into the cleaned reaction chamber to perform chemical vapor deposition reaction to generate an epitaxial wafer; controlling the flow ratio of the chemical vapor etching gas and the carrier gas introduced into the reaction chamber in the cleaning stage and the epitaxial growth stage of the reaction chamber; and controlling the rotating speed of the fan to regulate and control the temperature of the quartz bell jar.

Description

Epitaxial growth method and epitaxial wafer
Technical Field
The embodiment of the invention relates to the technical field of semiconductor manufacturing, in particular to an epitaxial growth method and an epitaxial wafer.
Background
The vapor Phase Epitaxy (vapor Phase Epitaxy) is a common epitaxial growth technology, can realize that the epitaxial layers with different conductivity types, resistivity and structures and controllable thickness and resistivity can be grown on the polished wafer substrate, can meet various different requirements, can greatly improve the flexibility and performance of device design, and has wide application prospects in the field of various semiconductor functional devices. Specifically, the epitaxial production process generally utilizes a chemical vapor deposition method to inject a silicon source gas in a high-temperature sealed epitaxial reaction chamber into the surface of a polished wafer, and a layer of epitaxial layer is deposited and grown on the upper surface of the polished wafer, so that the manufactured wafer is called an epitaxial wafer. Compared with a polished wafer, the epitaxial wafer has the advantages of less surface defects, capability of controlling the thickness and the resistivity of the epitaxial layer and the like.
With the rapid development of the semiconductor industry, the quality requirement of the particles on the surface of the epitaxial wafer is higher and higher, and particularly for logic devices, the requirement of the particles on the surface of the epitaxial wafer needs to meet the following requirements: the average value of 19nm particles is less than 5, and the average value of 200nm particles is less than 0.2. Therefore, maintaining the cleanliness of the epitaxial reaction chamber becomes a critical factor affecting the quality and yield of epitaxial wafers.
In addition, for an epitaxial reaction chamber, uniform temperature field and accurate temperature control are the main factors influencing the flatness of an epitaxial wafer and controlling slip dislocation, wherein a clean and transparent quartz bell jar is an important factor influencing the uniformity of the temperature field and the light transmittance. Meanwhile, the clean and transparent quartz bell jar is also an effective factor for ensuring the temperature of the thermometer to be accurately read.
Disclosure of Invention
In view of the above, embodiments of the present invention are directed to an epitaxial growth method and an epitaxial wafer; the epitaxial growth by-products deposited on the surface of the quartz bell jar can be effectively removed, so that the quartz bell jar is kept in a long-term clean and light-transmitting state, the particle level of the surface of the epitaxial wafer is improved, the thickness uniformity and the flatness of the epitaxial wafer are improved, the generation of slip dislocation is inhibited, and the yield and the productivity of the epitaxial wafer are finally improved.
The technical scheme of the embodiment of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides an epitaxial growth method, where the epitaxial growth method includes:
cleaning stage of the reaction chamber: cleaning the reaction chamber by introducing chemical vapor etching gas into the reaction chamber;
and (3) an epitaxial growth stage: putting the polished wafer into the cleaned reaction chamber to perform chemical vapor deposition reaction to generate an epitaxial wafer;
controlling the flow ratio of the chemical vapor etching gas and the carrier gas introduced into the reaction chamber in the cleaning stage and the epitaxial growth stage of the reaction chamber to increase the etching removal amount of the epitaxial growth by-products on the surface of the quartz bell jar;
and controlling the rotation speed of a fan to regulate and control the temperature of the quartz bell jar in the cleaning stage and the epitaxial growth stage of the reaction chamber so as to increase the etching removal amount of the epitaxial growth byproducts on the surface of the quartz bell jar in the cleaning stage of the reaction chamber and reduce the deposition amount of the epitaxial growth byproducts on the surface of the quartz bell jar in the epitaxial growth stage.
In a second aspect, embodiments of the present invention provide an epitaxial wafer prepared by the epitaxial growth method according to the first aspect.
The embodiment of the invention provides an epitaxial growth method and an epitaxial wafer; the epitaxial growth method comprises a cleaning stage and an epitaxial growth stage of a reaction chamber; respectively controlling the flow ratio of chemical vapor etching gas and carrier gas in the cleaning stage and the epitaxial growth stage of the reaction chamber, and simultaneously regulating and controlling the temperature of the quartz bell jar by controlling the rotating speed of the fan, so that the etching removal amount of the epitaxial growth byproducts on the surface of the quartz bell jar is increased in the cleaning stage of the reaction chamber; and in the epitaxial growth stage, the deposition amount of the epitaxial growth by-products on the surface of the quartz bell jar is reduced, so that the quartz bell jar is kept in a long-term clean and transparent state.
Drawings
Fig. 1 is a schematic structural diagram of a conventional epitaxial growth apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic flow diagram of reactant gases in a reaction chamber according to an embodiment of the present invention;
FIG. 3 is a schematic view of a conventional epitaxial growth process flow provided by an embodiment of the present invention;
fig. 4 is a schematic flow chart of an epitaxial growth method according to an embodiment of the present invention;
FIG. 5 is a schematic view of an epitaxial growth process flow provided by an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating the temperature change of a quartz bell jar during the cleaning process of a reaction chamber according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating temperature changes of a quartz bell jar during an epitaxial deposition phase according to an embodiment of the present invention;
FIG. 8 is a schematic illustration of a particle distribution on a surface of an epitaxial wafer according to an embodiment of the present invention;
FIG. 9 is a schematic illustration of an epitaxial wafer surface topography provided in accordance with an embodiment of the present invention;
FIG. 10 is a schematic illustration of a distribution of particles on the surface of an epitaxial wafer according to another embodiment of the present invention;
FIG. 11 is a schematic illustration of an epitaxial wafer surface topography provided in accordance with another embodiment of the present invention;
FIG. 12 is a schematic illustration of a distribution of particles on the surface of an epitaxial wafer according to yet another embodiment of the present invention;
fig. 13 is a schematic view of an epitaxial wafer surface topography provided in accordance with yet another embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1, there is shown a conventional epitaxial growth apparatus 1, the epitaxial growth apparatus 1 specifically including:
a base 10 for carrying a polished wafer W;
a base support 20 for supporting the base 10And drives the susceptor (10) to rotate around the central axis (X) at a set angular velocity during the epitaxial growth; wherein the polished wafer W rotates with the susceptor 10 about the central axis X during rotation of the susceptor 10. That is, the polished wafer W is held stationary with respect to the susceptor 10, and thus, a small gap G is required between the radial edge of the susceptor 10 and the adjacent part 10A, typically the adjacent part 10A is a preheating ring for expanding the heat control region beyond the edge of the polished wafer W while preheating the reaction gas that is about to reach the edge of the polished wafer W; the reaction gas includes a silicon source gas and a carrier gas such as H 2 Dopant gases, etc.;
a quartz bell jar 30 including an upper quartz bell jar 30A and a lower quartz bell jar 30B; wherein the upper quartz bell jar 30A and the lower quartz bell jar 30B together enclose a reaction chamber RC in which the susceptor 10 and the susceptor support stand 20 are accommodated; wherein the susceptor 10 partitions the reaction chamber RC into an upper reaction chamber RC1 and a lower reaction chamber RC2, and the polishing wafer W is placed in the upper reaction chamber RC 1. Generally, the gas pressure in the upper reaction chamber RC1 is slightly greater than the gas pressure in the lower reaction chamber RC2 so that the reaction gas in the upper reaction chamber RC1 enters the lower reaction chamber RC2 through the gap G;
a gas inlet 40 for supplying a reaction gas into the upper reaction chamber RC1 to pass the silicon source gas and H 2 Reacting to generate silicon atoms and depositing the silicon atoms on the polished wafer W to grow an epitaxial layer on the polished wafer W, and doping the epitaxial layer by a dopant gas to obtain a required resistivity; wherein the air inlets 40 include at least one primary air inlet (not shown) and at least one secondary air inlet (not shown);
an inlet cap 50, the inlet cap 50 being disposed at the inlet port 40, the reaction gas entering the reaction chamber RC from the inlet cap 50 at one side of the reaction chamber RC during the epitaxial growth;
an exhaust port 60 for exhausting the reaction off-gas inside the reaction chamber RC out of the reaction chamber RC;
a plurality of heating bulbs 70 disposed at the peripheries of the upper and lower quartz bell jars 30A and 30B and used to provide a high temperature environment for the chemical vapor epitaxial deposition reaction in the reaction chamber RC through the upper and lower quartz bell jars 30A and 30B;
the fan 80 is arranged above the reaction chamber RC, and the temperature of the circulating water in the heating bulb 70 and the temperature of the quartz bell jar 30 are regulated and controlled by regulating the rotating speed of the fan 80, so that the explosion accident caused by the continuous high temperature of the reaction chamber RC is avoided; it can be understood that the different rotation speeds of the blower 80 result in different flow rates of the cooling air blown to the heating bulb 70 and the quartz bell jar 30, so as to regulate and control the temperature of the circulating water in the heating bulb 70 and the temperature of the quartz bell jar 30;
a mounting part 90 for assembling respective elements of the epitaxial growth apparatus 1;
of course, a temperature sensor 100 is further provided in the epitaxial growth apparatus 1 for monitoring the temperature field of the reaction chamber RC in real time to provide a uniform and stable temperature field for the chemical deposition reaction of the polished wafer W.
It can be understood that, during the epitaxial growth, referring to fig. 2, a schematic flow direction of the reaction gas in the reaction chamber RC is shown. As can be seen from fig. 2, the reaction gas enters from the gas inlet cover 50 through the carrier gas, passes through the gas inlet and climbs to the preheating ring 10A, and flows through the surface of the polished wafer W supported on the susceptor 10 after being preheated by the preheating ring 10A to perform the chemical vapor deposition reaction, and the reaction exhaust generated by the chemical vapor deposition reaction is exhausted from the reaction chamber RC through the exhaust port 60.
For the epitaxial growth apparatus 1 shown in fig. 1, as shown in fig. 3, the temperature of the reaction chamber RC is first raised to 1150 ℃, and a chemical vapor etching gas is simultaneously introduced into the reaction chamber RC to clean the interior of the reaction chamber RC, specifically, the chemical vapor etching gas may be an HCl gas, and of course, H may also be used in the chemical vapor etching process 2 As a carrier gas. In the cleaning process of the reaction chamber RC, the flow rate of the carrier gas at the primary inlet is 5slm, and the flow rate of the carrier gas at the secondary inlet is 5slm. It should be noted that after the reaction chamber RC is cleaned, the temperature may be lowered to 750 ℃ to load the polished wafer W for the epitaxial growth process.
When the temperature of the reaction chamber RC is 750 ℃, after the polished wafer W is loaded on the susceptor 10, the temperature in the reaction chamber RC is raised to 1130 ℃ and a carrier gas H is introduced into the reaction chamber RC 2 To start baking the surface of the polished wafer W; furthermore, when the temperature of the reaction chamber RC is 1110 ℃, the silicon source gas and the carrier gas H are simultaneously introduced into the reaction chamber RC 2 Wherein the silicon source gas may be B 2 H 6 Or SiHCl 3 Or pH 3 To grow an epitaxial layer on the surface of the polished wafer W. And after the epitaxial growth process is finished, reducing the internal temperature of the reaction chamber RC to 750 ℃, and unloading and taking out the epitaxial wafer. In the epitaxial growth process, the flow rate of the carrier gas at the primary inlet is 50slm, and the flow rate of the carrier gas at the secondary inlet is 20slm.
However, in the actual epitaxial growth process, the prior art method shown in FIG. 3 may result in chemical deposition of a portion of the epitaxial growth by-products on the surface of the quartz bell jar 30. Meanwhile, in the cleaning process of the reaction chamber RC, epitaxial growth byproducts deposited on the surface of the quartz bell jar 30 cannot be completely removed due to insufficient chemical vapor etching gas proportioning and temperature field control, and then the epitaxial growth byproducts deposited on the surface of the quartz bell jar 30 are more and more increased along with the increase of time, so that the cleanliness of the internal environment of the reaction chamber RC is reduced, the uniformity of a temperature field is deteriorated, even the temperature sensor 100 cannot accurately monitor the internal environment temperature of the reaction chamber RC, and finally the quality and yield of an epitaxial wafer are seriously influenced.
Based on the above description, it is desirable to provide an epitaxial growth process flow in an embodiment of the present invention, which can maintain a long-term clean and transparent state of the quartz bell jar 30 by respectively controlling the proportion, flow rate, and temperature of the reaction gas introduced into the reaction chamber RC in the epitaxial growth stage and the reaction chamber RC cleaning stage, so as to improve the particle level on the surface of the epitaxial wafer, improve the thickness uniformity and flatness of the epitaxial wafer, suppress the generation of slip dislocation, and finally improve the quality and yield of the epitaxial wafer. Specifically, as shown in fig. 4, the epitaxial growth method provided in the embodiment of the present invention includes:
s401, a cleaning stage of the reaction chamber: cleaning the reaction chamber by introducing chemical vapor etching gas into the reaction chamber;
s402, epitaxial growth stage: putting the polished wafer into the cleaned reaction chamber to carry out chemical vapor deposition reaction to generate an epitaxial wafer;
controlling the flow ratio of the chemical vapor etching gas and the carrier gas introduced into the reaction chamber in the cleaning stage and the epitaxial growth stage of the reaction chamber to increase the etching removal amount of the epitaxial growth by-products on the surface of the quartz bell jar;
and controlling the rotation speed of a fan to regulate and control the temperature of the quartz bell jar in the cleaning stage and the epitaxial growth stage of the reaction chamber so as to increase the etching removal amount of the epitaxial growth byproducts on the surface of the quartz bell jar in the cleaning stage of the reaction chamber and reduce the deposition amount of the epitaxial growth byproducts on the surface of the quartz bell jar in the epitaxial growth stage.
For the epitaxial growth method shown in fig. 4, the etching removal amount of the epitaxial growth by-product deposited on the surface of the quartz bell jar is increased by controlling the higher flow ratio of the chemical vapor etching gas and the carrier gas in the cleaning stage of the reaction chamber and controlling the rotating speed of the fan to make the temperature of the surface of the quartz bell jar reach the highest temperature; in the epitaxial growth stage, the deposition amount of the epitaxial growth by-products on the surface of the quartz bell jar is reduced in the epitaxial growth process by controlling the lower flow ratio of the chemical vapor etching gas and the carrier gas and controlling the higher rotating speed of the fan so as to enable the temperature of the surface of the quartz bell jar to reach the lower temperature, thereby ensuring that the quartz bell jar is kept in a clean and light-transmitting state for a long time.
Specifically, as shown in fig. 5, during the cleaning phase of the reaction chamber, the ratio between the first flow rate of the chemical vapor etching gas and the second flow rate of the carrier gas ranges from 2:1 to 5:1. specifically, the first flow rate of the chemical vapor etching gas is 10 to 50slm, and the second flow rate of the carrier gas is 5 to 10slm. The first flow rate of the chemical etching gas and the second flow rate of the carrier gas are the total flow rate of the primary gas inlet and the secondary gas inlet. Of course, it will be appreciated that increasing the flow of the chemical vapor etching gas and the carrier gas during the cleaning of the reaction chamber can increase the etch removal of by-products deposited on the surface of the quartz bell jar.
In addition, in the embodiment of the invention, as shown in fig. 5, the cleaning stage of the reaction chamber includes a first baking stage, a first sub-cleaning stage and a second sub-cleaning stage; wherein the content of the first and second substances,
in the first baking stage and the first sub-cleaning stage, the rotating speed of the fan is 75-80% of the set maximum rotating speed of the fan.
In some examples, the time of the first bake phase and the first sub-cleaning phase is 95 to 115s during the cleaning phase of the reaction chamber. That is, in the first baking stage and the first sub-cleaning stage, on one hand, the temperature of the quartz bell jar is increased to 565 ℃ to 590 ℃ by reducing the rotation speed of the fan, so that the surface temperature of the quartz bell jar reaches the highest temperature to fully etch the quartz bell jar, and the temperature change of the quartz bell jar in the whole reaction chamber cleaning process is specifically shown in fig. 6; on the other hand, the maintaining time of the first baking stage and the first sub-cleaning stage is ensured to ensure that the temperature of the quartz bell jar surface is maintained at a higher temperature as much as possible within a sufficient baking and cleaning time range.
Furthermore, as shown in fig. 5, the epitaxial growth phase includes a second baking phase, a third sub-cleaning phase and an epitaxial deposition phase; wherein the content of the first and second substances,
in the third sub-cleaning stage, a ratio range between a third flow rate of the chemical vapor etching gas and a fourth flow rate of the carrier gas is 1:10 to 1:20. specifically, the third flow rate of the chemical vapor etching gas is 1 to 10slm, and the fourth flow rate of the carrier gas is 50 to 90slm. It can be understood that before the epitaxial deposition reaction, chemical vapor etching gas is further introduced into the reaction chamber RC to perform clean etching on the surface of the quartz bell jar 30 again, so as to improve the surface state of the quartz bell jar 30 during the epitaxial deposition phase, thereby improving the uniformity and flatness of the thickness of the epitaxial wafer.
In some examples, the fan speed is 92.5% of the set fan maximum speed during the epitaxial growth phase. The temperature change of the quartz bell jar during the epitaxial deposition phase is shown in fig. 7. As can be seen from FIG. 7, the surface temperature of the quartz bell jar during the epitaxial deposition is 450-500 deg.C, and the deposition of the epitaxial growth by-products on the surface of the quartz bell jar is reduced due to the low surface temperature of the quartz bell jar, thereby ensuring that the quartz bell jar 30 is kept in a clean and transparent state.
Finally, the embodiment of the invention also provides an epitaxial wafer, and the epitaxial wafer is prepared by the epitaxial growth method in the technical scheme.
The technical solution of the present invention will be described in detail by specific examples.
Example 1
When the temperature of the reaction chamber is raised to 1150 ℃, introducing HCl gas and H into the reaction chamber 2 To clean the reaction chamber and the quartz bell jar; wherein the first flow rate of HCl gas is 10slm 2 Is set to 5slm; the time of the first baking stage and the first sub-cleaning stage of the reaction chamber is 95s, and meanwhile, the rotating speed of the fan is 75% of the set maximum rotating speed of the fan in the first baking stage and the first sub-cleaning stage; when the reaction chamber is cleaned and cooled to 750 ℃, the cleaned polished wafer is placed on a base of the reaction chamber, the temperature of the reaction chamber is raised to about 1130 ℃ to start a second baking stage, namely H is introduced 2 Baking is carried out; then HCl gas and H are introduced into the reaction chamber 2 To clean the reaction chamber and the quartz bell jar again, the third flow rate of HCl gas is 5slm 2 The fourth flow rate of (3) is 50slm. After the cleaning is finished, siHCl is introduced into the reaction chamber at about 1110 DEG C 3 And H 2 To perform a chemical vapor deposition reaction. And after the epitaxial growth reaction is finished, taking out the epitaxial wafer. Referring to fig. 8 and 9, which respectively show a particle distribution on the surface of an epitaxial wafer and a surface topography of the epitaxial wafer, it can be seen from fig. 8 and 9 that the epitaxial growth method provided by the embodiment of the invention grows an epitaxial layerThe particle impurities on the surface of the wafer are few, and the defect of fog is greatly improved.
Example 2
When the temperature of the reaction chamber is raised to 1150 ℃, HCl gas and H are introduced into the reaction chamber 2 To clean the reaction chamber and the quartz bell jar; wherein the first flow rate of HCl gas is 50slm 2 Set to 10slm; the time of the first baking stage and the first sub-cleaning stage of the reaction chamber is 115s, and meanwhile, in the first baking stage and the first sub-cleaning stage, the rotating speed of the fan is 80% of the set maximum rotating speed of the fan; when the reaction chamber is cleaned and cooled to 750 ℃, the cleaned polished wafer is placed on a base of the reaction chamber, the temperature of the reaction chamber is raised to about 1130 ℃ to start a second baking stage, namely H is introduced 2 Baking is carried out; then HCl gas and H are introduced into the reaction chamber 2 To re-clean the reaction chamber and quartz bell jar, at which time the third flow rate of HCl gas was 4.5slm 2 The fourth flow of (3) is 90slm. After the cleaning is finished, siHCl is introduced into the reaction chamber at about 1110 DEG C 3 And H 2 To perform a chemical vapor deposition reaction. And after the epitaxial growth reaction is finished, taking out the epitaxial wafer. Referring to fig. 10 and fig. 11, which respectively show a particle distribution on the surface of the epitaxial wafer and a surface topography of the epitaxial wafer, it can be seen from fig. 10 and fig. 11 that the epitaxial growth method provided by the embodiment of the present invention has few impurities on the surface of the epitaxial wafer, and the "haze" defect is greatly improved.
Example 3
When the temperature of the reaction chamber is raised to 1150 ℃, HCl gas and H are introduced into the reaction chamber 2 To clean the reaction chamber and the quartz bell jar; wherein the first flow rate of HCl gas is 40slm 2 Is set to 10slm; the time of a first baking stage and a first sub-cleaning stage of the reaction chamber is 100s, and meanwhile, in the first baking stage and the first sub-cleaning stage, the rotating speed of the fan is 80% of the set maximum rotating speed of the fan; after the reaction chamber is cleaned and cooled to 750 ℃, the cleaned polished wafer is placed on a base of the reaction chamber, and the temperature of the reaction chamber is raised to about 1130 ℃ to startEntering a second baking stage, i.e. introducing H 2 Baking is carried out; then HCl gas and H are introduced into the reaction chamber 2 To re-clean the reaction chamber and quartz bell jar, with a third flow of HCl gas of 6slm 2 Is 80slm. After the cleaning is finished, siHCl is introduced into the reaction chamber at about 1110 DEG C 3 And H 2 To perform a chemical vapor deposition reaction. And after the epitaxial growth reaction is finished, taking out the epitaxial wafer. Referring to fig. 12 and 13, which respectively show a particle distribution on the surface of the epitaxial wafer and a surface topography of the epitaxial wafer, it can be seen from fig. 12 and 13 that the epitaxial growth method provided by the embodiment of the invention has few impurities on the surface of the epitaxial wafer, and the "fog" defect is greatly improved.
Based on the above explanation, the epitaxial growth method provided by the embodiment of the invention has the advantages that the epitaxial wafer surface grown by the epitaxial growth method has less particle impurities, the 'fog' defect is greatly improved, that is, the higher HCl gas and H gas are controlled in the cleaning stage of the reaction chamber 2 And reducing the rotation speed of the fan to raise the surface temperature of the quartz bell jar while controlling the lower HCl gas and H gas in the epitaxial growth stage 2 The flow ratio of the silicon wafer and the control of the higher rotating speed of the fan enable the temperature of the surface of the quartz bell jar to reach lower temperature, the etching removal amount of epitaxial growth byproducts deposited on the surface of the quartz bell jar can be increased, the deposition of the epitaxial growth byproducts on the surface of the quartz bell jar is reduced, and therefore the quality of the epitaxial wafer is improved.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (9)

1. An epitaxial growth method, characterized in that it comprises:
cleaning stage of the reaction chamber: cleaning the reaction chamber by introducing chemical vapor etching gas into the reaction chamber;
and (3) an epitaxial growth stage: putting the polished wafer into the cleaned reaction chamber to carry out chemical vapor deposition reaction to generate an epitaxial wafer;
controlling the flow ratio of the chemical vapor etching gas and the carrier gas introduced into the reaction chamber in the cleaning stage and the epitaxial growth stage of the reaction chamber;
and controlling the rotating speed of a fan to regulate and control the temperature of the quartz bell jar in the cleaning stage and the epitaxial growth stage of the reaction chamber.
2. The epitaxial growth method according to claim 1, characterized in that the ratio between the first flow rate of the chemical vapor etching gas and the second flow rate of the carrier gas during the cleaning phase of the reaction chamber is in the range of 2:1 to 5:1.
3. the epitaxial growth method of claim 2, wherein the first flow rate of the chemical vapor etching gas is 10 to 50slm and the second flow rate of the carrier gas is 5 to 10slm.
4. The epitaxial growth method of claim 1, wherein the cleaning phase of the reaction chamber comprises a first bake phase, a first sub-cleaning phase and a second sub-cleaning phase; wherein, the first and the second end of the pipe are connected with each other,
in the first baking stage and the first sub-cleaning stage, the rotating speed of the fan is 75-80% of the set maximum rotating speed of the fan.
5. The epitaxial growth method according to claim 4, characterized in that the time of the first bake-out phase and the first sub-cleaning phase during the cleaning of the reaction chamber is 95-115 s.
6. The epitaxial growth method of claim 1, wherein the epitaxial growth phase comprises a second bake phase, a third sub-clean phase and an epitaxial deposition phase; wherein the content of the first and second substances,
in the third sub-cleaning stage, a ratio range between a third flow rate of the chemical vapor etching gas and a fourth flow rate of the carrier gas is 1: 10-1: 20.
7. the epitaxial growth method of claim 6 wherein the third flow rate of the chemical vapor etching gas is 1-10 slm and the fourth flow rate of the carrier gas is 50-90 slm.
8. The epitaxial growth method according to claim 1, characterized in that the fan speed is 92.5% of the set fan maximum speed during the epitaxial growth.
9. An epitaxial wafer prepared by the epitaxial growth method of any one of claims 1 to 8.
CN202211019953.3A 2022-08-24 2022-08-24 Epitaxial growth method and epitaxial wafer Active CN115198352B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202211019953.3A CN115198352B (en) 2022-08-24 2022-08-24 Epitaxial growth method and epitaxial wafer
TW111140605A TWI839916B (en) 2022-08-24 2022-10-26 A method for epitaxial growth and epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211019953.3A CN115198352B (en) 2022-08-24 2022-08-24 Epitaxial growth method and epitaxial wafer

Publications (2)

Publication Number Publication Date
CN115198352A true CN115198352A (en) 2022-10-18
CN115198352B CN115198352B (en) 2024-03-26

Family

ID=83572030

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211019953.3A Active CN115198352B (en) 2022-08-24 2022-08-24 Epitaxial growth method and epitaxial wafer

Country Status (1)

Country Link
CN (1) CN115198352B (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2113465A (en) * 1982-01-12 1983-08-03 Rca Corp Method for growing monocrystalline silicon on a masking layer
JPS6169115A (en) * 1984-09-12 1986-04-09 Nec Corp Vapor-phase epitaxial growing method
US6136211A (en) * 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
US6738683B1 (en) * 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
US20100294197A1 (en) * 2009-05-20 2010-11-25 Siltronic Ag Methods For Producing Epitaxially Coated Silicon Wafers
US20170194137A1 (en) * 2015-12-30 2017-07-06 Siltronic Ag Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
WO2017122963A2 (en) * 2016-01-12 2017-07-20 주식회사 엘지실트론 Method for manufacturing epitaxial wafer
US20180363165A1 (en) * 2015-12-17 2018-12-20 Siltronic Ag Method for epitaxially coating semiconductor wafers, and semiconductor wafer
CN113838746A (en) * 2021-11-29 2021-12-24 西安奕斯伟材料科技有限公司 Method for improving flatness of epitaxial wafer and epitaxial wafer
CN113913926A (en) * 2021-10-22 2022-01-11 西安奕斯伟材料科技有限公司 Recovery method of epitaxial reaction chamber, epitaxial growth device and epitaxial wafer

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2113465A (en) * 1982-01-12 1983-08-03 Rca Corp Method for growing monocrystalline silicon on a masking layer
JPS6169115A (en) * 1984-09-12 1986-04-09 Nec Corp Vapor-phase epitaxial growing method
US6136211A (en) * 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
US6738683B1 (en) * 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
US20100294197A1 (en) * 2009-05-20 2010-11-25 Siltronic Ag Methods For Producing Epitaxially Coated Silicon Wafers
US20180363165A1 (en) * 2015-12-17 2018-12-20 Siltronic Ag Method for epitaxially coating semiconductor wafers, and semiconductor wafer
US20170194137A1 (en) * 2015-12-30 2017-07-06 Siltronic Ag Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
WO2017122963A2 (en) * 2016-01-12 2017-07-20 주식회사 엘지실트론 Method for manufacturing epitaxial wafer
CN113913926A (en) * 2021-10-22 2022-01-11 西安奕斯伟材料科技有限公司 Recovery method of epitaxial reaction chamber, epitaxial growth device and epitaxial wafer
CN113838746A (en) * 2021-11-29 2021-12-24 西安奕斯伟材料科技有限公司 Method for improving flatness of epitaxial wafer and epitaxial wafer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JUNJI SAITO ER SL.: "GaAs surface cleaning with HCl gas and hydrogen mixture for molecular-beam-epitaxial growth", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 27, no. 4, pages 702 - 703 *

Also Published As

Publication number Publication date
TW202307243A (en) 2023-02-16
CN115198352B (en) 2024-03-26

Similar Documents

Publication Publication Date Title
US10640883B2 (en) Method and apparatus for producing epitaxial wafer
US8268708B2 (en) Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
US8372298B2 (en) Method for producing epitaxially coated silicon wafers
JP2010040534A (en) Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer
JP3207832B2 (en) CVD reactor and method for producing epitaxially grown semiconductor wafers
US8530801B2 (en) Method and apparatus for manufacturing semiconductor wafer
KR101559977B1 (en) Silicon epitaxial wafer and method for manufacturing the same
CN112201568A (en) Method and equipment for epitaxial growth of silicon wafer
US20040178176A1 (en) Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
TWI626730B (en) Method of manufacturing epitaxial wafer
US11587788B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
CN114045470B (en) Cleaning method for normal-pressure epitaxial reaction chamber and epitaxial silicon wafer
CN115198352B (en) Epitaxial growth method and epitaxial wafer
CN105671631B (en) Method for cleaning back surface of 200mm-300mm epitaxial equipment base in situ
TWI839916B (en) A method for epitaxial growth and epitaxial wafer
WO2020158657A1 (en) Film forming apparatus and film forming method
TWI838823B (en) Cleaning method for atmospheric pressure epitaxial reaction chamber and epitaxial silicon wafer
JP2012094615A (en) Deposition method for silicon oxide film and manufacturing method for silicon epitaxial wafer
JP2021031363A (en) Method for manufacturing silicon carbide polycrystal substrate
CN117265654A (en) Epitaxial growth method and epitaxial wafer
CN111748788B (en) Film forming method and film forming apparatus
JP2004134625A (en) Method and apparatus for manufacturing semiconductor device
JP5206613B2 (en) Epitaxial wafer susceptor, manufacturing method thereof, and epitaxial growth apparatus using the same
KR20080110481A (en) Vapor phase growing apparatus and vapor phase growing method
CN115928203A (en) Epitaxial wafer production equipment, epitaxial wafer production method and device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065

Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd.

Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

Address before: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065

Applicant before: Xi'an yisiwei Material Technology Co.,Ltd.

Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd.

CB02 Change of applicant information
GR01 Patent grant
GR01 Patent grant