CN115166297A - Graphene-based MOEMS accelerometer and processing method thereof - Google Patents
Graphene-based MOEMS accelerometer and processing method thereof Download PDFInfo
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- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/03—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses by using non-electrical means
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Abstract
The invention discloses a graphene-based MOEMS accelerometer and a processing method thereof, wherein the MOEMS accelerometer sequentially comprises a device structure layer, an oxide buried layer and a bottom substrate layer from top to bottom based on the graphene MOEMS accelerometer; the device structural layer includes braced frame and arranges in the quality piece of braced frame intermediate position, the left and right sides of quality piece respectively through the cantilever beam spring with braced frame connects, the upper end and the lower extreme at the longitudinal direction middle part of quality piece outwards bulge respectively form quality piece sensing area, with the periodic graphene strip of laying of banded array on the quality sensing area and constitute sensitive unit, braced frame's upper and lower both ends with the left and right sides symmetry of sensitive unit is provided with the optical waveguide, is provided with the optical fiber interface on every optical waveguide. The invention has the advantages of simple structure, light weight, clear processing technology and low cost, and has potential wide application prospect in the aspects of consumer electronics, inertial navigation and the like.
Description
Technical Field
The invention relates to the technical field of micro inertial sensors, and particularly provides an accelerometer based on graphene MOEMS and a processing method thereof.
Background
Micro-opto-electro-mechanical systems (MOEMS) accelerometers are one of the new micro-inertial devices produced by the combination of micro-optics and micro-mechanics. The MOEMS accelerometer has the remarkable advantages of high precision, wide bandwidth, small volume, high cost benefit, strong electromagnetic interference resistance, high response speed and the like. The method has wide application prospect in the fields of inertial navigation, seismic monitoring, aerospace, railway technology, industrial testing and the like, and is also an important research direction for the development of future accelerometers.
Graphene is a new material with a two-dimensional cellular lattice structure formed by close packing of carbon atoms, and its unique properties have attracted the attention of many researchers in recent years. The theoretical Young modulus value of the graphene used in the manufacturing of the micro-mechanical system can reach 2TPa, and the inherent tensile strength is 130GPa. Its tensile strength is much greater than that of silicon. The Young's modulus of silicon is 169GPa in the <110> direction, 130GPa in the <100> direction, about 10% of that of graphene. Furthermore, the optical response of graphene has tunable properties. These unique optical and mechanical properties have potentially wide application advantages in MOEMS accelerometers.
At present, a piezoelectric detection method, a piezoresistive detection method and a capacitance detection technology are adopted by a micro electro mechanical system accelerometer. Among them, piezoelectric and piezoresistive detection methods are generally sensitive to humidity and temperature variations, which severely limits their applications. Capacitance detection methods are the most popular technology in the mems accelerometer industry. The capacitance detection technology has the defects of small capacitance change, curling effect, parasitic capacitance, electromagnetic wave interference, complex detection circuit and the like. Compared with other existing detection technologies, the optical detection technology has the characteristics of stronger anti-electromagnetic interference capability, higher thermal stability, better performance and higher sensitivity, and the MOEMS accelerometer can overcome the defects. In addition, the traditional MOEMS accelerometer is large in packaging size, low in reliability and low in stability, and still stays in a theoretical research stage, and the graphene-based MOEMS accelerometer is not widely applied.
Disclosure of Invention
The invention aims to provide an accelerometer based on graphene MOEMS (micro-electro-mechanical-system-based active mechanical system) and a processing method thereof, which aim to overcome the defects of small capacitance change, curling effect, parasitic capacitance, generation of electromagnetic wave interference, complex detection circuit and the like of an accelerometer based on piezoelectricity, piezoresistance and capacitance detection technology, and solve the technical problems of large packaging size, low reliability and low stability of the traditional MOEMS.
In order to achieve the above object of the present invention, the present invention provides the following technical solutions:
a graphene-based MOEMS accelerometer comprises a bottom substrate layer, an oxide buried layer deposited on the bottom substrate layer, a device structure layer deposited on the oxide buried layer; a plurality of hole structures with different shapes are formed in the device structure layer, and air is filled in the hole structures; the device structural layer includes braced frame and arranges in the quality piece of braced frame intermediate position, the left and right sides of quality piece respectively through the cantilever beam spring with braced frame connects, the upper end and the lower extreme at the longitudinal direction middle part of quality piece outwards bulge respectively and form the quality piece sensing region, lay the graphite alkene area with banded array periodicity on the quality sensing region and constitute sensitive unit, braced frame's upper and lower both ends with the left and right sides symmetry of sensitive unit is provided with the optical waveguide, is provided with the optical fiber interface on every optical waveguide.
Further, the bottom substrate layer is a cuboid structure and is used for supporting the whole device structure layer, the material of the bottom substrate layer is any one of silicon carbide, silicon nitride and sapphire, and silicon is preferably selected as the material of the bottom substrate layer.
Further, the buried oxide layer is used for releasing the whole device structure layer and connecting the bottom substrate layer and the device structure layer, the buried oxide layer is in a square frame shape and made of any one of sapphire, silicon dioxide and titanium dioxide, and preferably made of silicon dioxide.
Furthermore, the thicknesses of the mass block, the cantilever spring beam and the support frame are the same, the heights of the optical waveguide and the mass block sensing area are the same, and the material of the mass block, the mass block sensing area, the optical waveguide, the cantilever spring beam and the support frame in the device structure layer is any one of silicon and silicon nitride, and silicon is preferably selected.
Furthermore, the width and the length of the device structure layer, the oxide buried layer and the bottom substrate layer are consistent.
The processing method based on the graphene MOEMS accelerometer comprises the following steps:
(1) Drying the surface of the bottom substrate layer, depositing an oxide buried layer on the surface of the bottom substrate layer by using a low-pressure chemical vapor deposition process, further depositing a device layer on the surface of the oxide buried layer, and then sequentially processing the device layer through glue coating, exposure, development, etching and photoresist removing to form an optical waveguide and mass block sensing area structure, a mass block, a cantilever spring beam and a support frame structure;
(2) And manufacturing a graphene belt, transferring the manufactured graphene belt to a mass block sensing area, and finally cleaning and drying.
Further, the step (1) specifically comprises the following steps:
(101) Cleaning: cleaning a bottom substrate layer by using sulfuric acid and hydrogen peroxide solution, drying the surface of the bottom substrate layer by adopting low-temperature baking, depositing an oxide layer on the surface of the bottom substrate layer by using a low-pressure chemical vapor deposition process, and further depositing a silicon/silicon nitride device layer on the surface of the oxide layer;
(102) Gluing: uniformly spin-coating a layer of photoresist with a custom thickness on the upper surface of the semi-finished product obtained in the step (101) by adopting a rotary glue coating method, and further heating and drying the rotary photoresist;
(103) Exposure and development: selectively exposing the photoresist outside the optical waveguide and mass block sensing area by using a mask, placing the exposed photoresist in a developing solution after the exposure is finished, and carrying out photochemical reaction on the exposed photoresist in the designated area and the developing solution to leave the unexposed part of the photoresist so as to obtain patterns of the optical waveguide and mass block sensing area;
(104) Etching, namely etching the surface of the semi-finished product obtained in the step (103) by utilizing reactive ion etching to obtain the optical waveguide and the upper part structure of the mass block sensing area;
(105) Removing the photoresist: cleaning the residual photoresist on the surface of the product after the etching in the step (104) by using an acetone solution;
(106) Further cleaning and drying the surface of the product obtained in the step (105), and then spin-coating a layer of photoresist on the surface of the product;
(107) Carrying out photoetching, exposure and developing process operations by using a mask plate to obtain a partial pattern under a mass block sensing area;
(108) Etching the surface of the product obtained in the step (107) by using a RIE process to obtain a lower part structure of the mass block sensing area;
(109) Cleaning the photoresist by using an acetone solution to obtain an optical waveguide and mass block sensing area structure;
(110) Further processing the mass block, the cantilever spring beam and the support frame structure of the device layer, and spin-coating a layer of photoresist on the surface of the product obtained in the step (i);
(111) Carrying out photoetching, exposure and development process operations by using a mask plate to obtain patterns of the mass block, the cantilever spring beam and the support frame;
(112) Etching the silicon wafer by an RIE (reactive ion etching) process according to the pattern obtained in the step (111) to obtain a mass block, a cantilever spring beam and a support frame structure;
(113) Cleaning the residual photoresist on the surface of the product after etching by using an acetone solution;
(114) A portion of the buried oxide layer is removed by a hydrogen fluoride solution.
Further, the step (2) specifically comprises the following steps:
(201) Cleaning and drying the silicon wafer by adopting sulfuric acid and hydrogen peroxide solution, and depositing a layer of SiO on the surface of the silicon wafer by utilizing a low-pressure chemical vapor deposition process 2 In SiO 2 Spin-coating a layer of photoresist on the surface;
(202) And photoetching by using a mask with a strip pattern, and exposing and developing to obtain parallel strip patterns on the photoresist layer.
(203) SiO by RIE process pairing 2 Etching is carried out, and the photoresist is cleaned by adopting acetone solution, so that a square groove structure is obtained;
(204) Further to the etched SiO 2 Cleaning and drying the surface on SiO 2 A layer of light is spin-coated on the surfaceEtching photoresist, carrying out photoetching, exposure and development operations through a mask plate of the strip-shaped patterns to obtain the parallel strip-shaped patterns on the photoresist layer;
(205) Adopts magnetron sputtering technology to form SiO 2 Depositing a metal film on the groove;
(206) Stripping off SiO by acetone solution 2 The metal film and the photoresist overflowing from the groove only leave SiO 2 A metal film in the groove;
(207) By vapor deposition on SiO 2 Growing a graphene strip on the surface of the metal film in the groove;
(208) A PMMA layer is spin-coated on the metal film on which the graphene strip grows;
(209) SiO on a silicon substrate 2 Putting the sample with the metal film, the graphene band and the PMMA in the groove into a prepared HF corrosion solution;
(210) Etching off SiO in HF etching solution 2 A layer, such that the PMMA, graphene ribbon/metal film will float to the solution surface and separate from the silicon substrate;
(211) Transferring PMMA and graphene strips/metal films to a prepared FeCl-containing film 3 In HCl corrosive liquid, completely dissolving the metal film on the bottom layer, and floating the residual PMMA/graphene band film on the surface of the solution;
(212) Putting the PMMA/graphene band film into deionized water to be easily cleaned for multiple times;
(213) Transferring a PMMA/graphene strip film to a mass block sensing area in the MOEMS accelerometer structure processed in the step (1), vertically fishing out a PMMA/graphene-containing strip from one side of the sensing area of a silicon wafer to the water surface, adhering the PMMA/graphene strip to a specified area of the silicon wafer, namely adhering the PMMA/graphene strip to the mass block sensing area, cleaning the PMMA/graphene attached to the silicon wafer, cleaning and drying the silicon wafer with the PMMA/graphene strip to obtain the graphene firmly attached to the sensitive unit of the silicon wafer;
(214) Putting the graphene band/PMMA/silicon wafer sample into an acetone solution to dissolve PMMA, and transferring the residual pure graphene band to the mass block sensing area to obtain the graphene band/silicon wafer sample with the graphene band attached to the mass block sensing area;
(215) And cleaning and drying the graphene strip/silicon wafer structure sample to obtain a sensitive unit in the graphene MOEMS accelerometer structure.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention discloses an accelerometer based on graphene MOEMS. The change of the relative displacement change of the mass block to an optical signal is realized by introducing graphene, the optical detection technology is adopted, the optical accelerometer has the characteristics of high precision, high response speed, wide working bandwidth, high thermal stability, strong anti-electromagnetic interference capability and the like, the defects of small capacitance change, curling effect, parasitic capacitance, generation of electromagnetic interference, complex detection circuit and the like existing in the traditional micro-electromechanical accelerometer adopting piezoelectric, piezoresistive and capacitance detection technologies are effectively overcome, and the optical accelerometer has good practical value in practice.
2. The MOEMS accelerometer is introduced with the graphene material, so that the device has the characteristics of greatly reduced volume, light weight, easy structure design and excellent optical signal response, and has potential wide application prospects in the aspects of consumer electronics products, inertial navigation and the like.
Drawings
FIG. 1 is an exploded view of a three-dimensional structure of a graphene MOEMS accelerometer according to the present invention;
FIG. 2 is a schematic diagram of a three-dimensional structure of a device structure layer of the graphene MOEMS accelerometer of the invention;
FIG. 3 is a schematic diagram of a two-dimensional structure of a device structure layer of the graphene MOEMS accelerometer of the invention;
FIG. 4 is a graph of a transmission spectrum of a sensing unit according to the present invention under different chemical potentials of graphene;
FIG. 5 is a transmission spectrum of the sensing unit according to the present invention under different displacement variations;
FIG. 6 is a graph showing transmittance relationships for different displacements of the sensing unit according to the present invention;
FIG. 7 is a flow chart of a method for fabricating a MOEMS accelerometer structure according to the invention;
fig. 8 is a flowchart of a processing method for transferring graphene to a sensitive unit according to the present invention.
The reference numbers in the figures: 1. a device structure layer; 2. an oxide buried layer; 3. a substrate layer; 4. an optical fiber interface; 1-1, a mass block; 1-2, a sensitive unit; 1-3, cantilever spring beam; 1-4, optical waveguides; 1-5, a support frame; 1-6, graphene ribbons; 1-7, mass sensing area.
Detailed Description
For the purpose of better understanding of the technical solutions of the present invention, the present invention will be further described in detail with reference to the accompanying drawings and examples, which are described in detail below for the purpose of illustration only and are not intended to limit the present invention.
Fig. 1 is an explosion diagram of a three-dimensional structure of a graphene-based MOEMS accelerometer according to the present invention. The MOEMS accelerometer structure is sequentially from top to bottom: the device comprises a device structure layer 1, an oxide buried layer 2 and a bottom substrate layer 3, wherein the bottom substrate layer 3 is mainly used for supporting the device structure layer 1 and the oxide buried layer 2, and the bottom substrate layer 3 is cuboid; the buried oxide layer 2 is arranged between the device structural layer 1 and the substrate layer 3, plays a role of releasing the device structural layer, and has a structure in a square frame shape; the device structure layer 1 is internally provided with a plurality of structures of different shapes, and the structures of different shapes are connected with each other to form a unified and integral device structure layer. The device structure layer 1, the buried oxide layer 2 and the bottom substrate layer 3 have the same length and width.
The three-dimensional structure of the device structure layer of the graphene MOEMS accelerometer is shown in figure 2, and the device structure comprises a mass block 1-1, a sensitive unit 1-2, a cantilever spring beam 1-3, an optical waveguide 1-4 and a support frame 1-5. Of masses 1-1xThe positive and negative directions of the shaft are connected with the cantilever spring beams 1-3; the positive direction and the negative direction of the y axis of the mass block 1-1 are respectively connected with the sensitive unit through a cuboid bridge; the graphene strips 1-7 are laid on the left side, the right side and the upper side of the mass block sensing area 1-6 in a periodic array to form a cuboid-shaped sensing unit 1-2; the cantilever spring beams 1-3 are M-shaped and connected with the support frame 1-5 and the mass block 1-1, the cuboid optical waveguide 1-4 is integrated on the support frame 1-5, the support frame 1-5 is connected with the mass block 1-1 through the cantilever spring beams 1-3, and the support frame 1-5 is used for supporting each junction of the whole device structure layerAnd (5) forming. The height of the optical waveguide 1-4 is consistent with that of the mass block sensing area 1-6, and the thicknesses of the mass block 1-1, the cantilever spring beams 1-3 and the support frame 1-5 are the same.
Fig. 3 is a schematic two-dimensional structure diagram of a device structure layer according to the present invention. As can be seen, the mass blocks 1-1 are mainly distributed in the middle of the whole device layer; the two sensitive units 1-2 are respectively fixed at the upper end and the lower end of the middle of the mass block 1-1 in the y-axis direction; the four cantilever spring beams 1-3 are arranged at the left side and the right side of the mass block 1-1; the four optical waveguides 1-4 are arranged at the upper end and the lower end of the support frame 1-5 in the y-axis direction, and the two optical waveguides 1-4 at the lower end or the upper end are distributed at the left side and the right side of the sensitive unit 1-2 and are symmetrical to each other.
Graphene MOEMS accelerometers rely on the wavelength and intensity of light for modulation. The intensity or wavelength modulation is realized by the transverse and longitudinal movement of the mass block, the working principle is that light generated by a laser light source is coupled into a left input optical waveguide 1-4 of a device structure layer 1 through an optical fiber interface 4, the generated light passes through a sensitive unit 1-2 structure containing graphene and enters a right output optical waveguide 1-4, then the light is sent to a photoelectric detector through the optical fiber interface 4, and the detector converts an optical signal into an electric signal. Finally, by monitoring the electrical signal, the applied external acceleration can be estimated.
When acceleration is applied, the mass block 1-1 vibrates, the sensing unit 1-2 moves along with the mass block 1-1, and the intensity and the phase of an output optical signal change, so that the change of the relative displacement of the mass block 1-1 along with the change of an optical signal and the relation between the applied acceleration and the optical signal can be obtained, and the sensing performance of the graphene MOEMS accelerometer structure can be further determined.
FIG. 4 is a graph of transmission spectra of the sensing unit of the present invention under different chemical potentials of graphene, wherein the abscissa of the graph represents the wavelength of incident light, the ordinate represents the light-exiting transmittance, and under the conditions that the period of the graphene strip array is 0.2um and the width of the graphene strip array is 0.02um, and the parameters are not changed, 5 different transmission spectra in FIG. 4 respectively represent different chemical potentials of grapheneμ c The results obtained by simulation were 0.35eV, 0.40eV, 0.45eV, 0.50eV, and 0.55eV in this order. As can be seen from the figure, with grapheneChemical potentialμ c Increasing, the resonance mode in the transmission spectrum is regularly blue-shifted. The position of the resonance mode of the transmission spectrum can be effectively adjusted by changing the chemical potential of the graphene, so that the phenomenon shows that the graphene can realize the function of frequency selection.
FIG. 5 is a transmission spectrum of the sensing unit of the present invention under different displacement changes, in which the abscissa and ordinate of the graph are the same as those of FIG. 4, the period of the graphene strip array is 0.2um, the width is 0.02um, and the chemical potential is the same as that of the graphene strip arrayμ c Is 0.45eV, the displacement d of the sensing unit is 0.9um under the initial condition, the 8 different transmission spectrum curves in fig. 5 are the results obtained by simulation when the displacement d of the sensing unit is 0.1um, 0.2um, 0.3um, 0.4um, 0.5um, 0.6um, 0.7um and 0.8um in sequence. It can be seen from the figure that the transmittance at a wavelength of 0.597um gradually increases as the displacement d of the sensing unit increases. When the sensitive cell displacement d is moved from 0.1um to 0.8um, the corresponding transmittance rises from 37.6% to 89.8%. Therefore, when external acceleration is applied to cause the sensitive unit to generate displacement change, the intensity of the optical signal can be changed, and the applied acceleration can be obtained by detecting the intensity of the optical signal.
FIG. 6 is a graph showing the transmittance relationship corresponding to different displacements of the sensing unit according to the present invention, wherein the abscissa represents the displacement d of the sensing unit, the ordinate represents the transmittance of the optical signal, and the different transmittances in the graph are simulation results when the sensing unit moves to the + x axis and the-x axis. As can be seen from FIG. 6, when the sensing unit moves to the + x axis, by a displacement d from 0.8um by 0.1um in steps, the corresponding transmittance gradually decreases, and a slope of 0.75 can be obtained by linear fitting; when the sensing unit is moved to the-x axis, also from 0.8um by 0.1um in steps with a displacement d by 0.1um, the corresponding transmission also decreases gradually, and the linear fit results in a slope of-0.76, which indicates that the sensing unit has the same optical system sensitivity when moved to the + x axis and the-x axis, i.e. the optical system sensitivity is about 0.8%/um.
The substrate layer is a cuboid structure and supports the whole device structure layer, and can be made of silicon carbide (SiC), silicon (Si) and silicon nitride (Si) 3 N 4 ) HeilanbaoStone (Al) 2 O 3 ) In any case, si is preferably selected as the substrate material.
The buried oxide layer is connected with the bottom substrate layer and the device layer and used for releasing the whole device structure, the structure is in a square frame shape, and the material can be Al 2 O 3 Silicon dioxide (SiO) 2 ) Titanium dioxide (TiO) 2 ) In any of the above, the preferred material is SiO 2 。
The thicknesses of the mass block, the cantilever spring beam and the support frame are the same, the heights of the optical waveguide and the mass block sensing area are the same, and the materials of the mass block, the mass block sensing area, the optical waveguide, the cantilever spring beam and the support frame in the device structure layer can be Si and silicon nitride (Si) 3 N 4 ) In any case, si is preferably selected in the present invention.
The two-dimensional material in the sensitive unit of the device structure layer is in a strip shape, the two-dimensional materials in multiple strip shapes are arranged on the left side, the right side and the upper surface of the mass block sensing area in an array period, and the two-dimensional material is graphene.
The following describes in detail the structure processing steps of the graphene-based MOEMS accelerometer, taking silicon wafers as examples for both the bottom substrate layer and the device structure layer: the structure processing based on the graphene MOEMS accelerometer can be realized by dividing two parts. The first part is MOEMS accelerometer structure processing, and the second part is a processing technology for transferring graphene to the MOEMS accelerometer structure.
(1) The MOEMS accelerometer structure processing process flow chart shown in FIG. 7 specifically comprises the following steps:
(101) Cleaning the silicon wafer of the substrate layer by using sulfuric acid and hydrogen peroxide solution, drying the surface of the silicon wafer by low-temperature baking, depositing an oxide layer on the surface of the silicon wafer by using a low-pressure chemical vapor deposition (LPCVD) process, and further depositing a device layer of the silicon wafer on the surface of the oxide layer. The surface of the silicon wafer is cleaned and dried to remove ionic impurities on the surface, so that the adhesion of the surface of the silicon wafer is enhanced.
(102) Uniformly spin-coating a layer of photoresist with a self-defined thickness on the upper surface of the silicon wafer by adopting a rotary glue coating method, and further heating and drying the rotary photoresist to remove residual solvent in a glue film and improve the viscosity of the photoresist and the silicon wafer;
(103) Selectively exposing the photoresist according to the mask, after exposure is completed, putting the silicon wafer into a developing solution, carrying out photochemical reaction on the exposed photoresist in the designated area and the developing solution, and leaving the unexposed part of the photoresist to further obtain the patterns of the optical waveguide and the mass block sensing area;
(104) Etching the surface of the silicon wafer by using Reactive Ion Etching (RIE) to obtain the optical waveguide and the partial structure on the mass block sensing area;
(105) Cleaning the residual photoresist on the surface of the silicon wafer after etching by using an acetone solution;
(106) Further carrying out surface cleaning and drying on the silicon wafer of the etched sensing area part, and spin-coating a layer of photoresist on the surface of the silicon wafer;
(107) Carrying out photoetching, exposure and developing process operations by using a mask plate to obtain a partial pattern under a mass block sensing area;
(108) Etching the surface of the silicon wafer by using an RIE (reactive ion etching) process to obtain a lower part structure of the mass block sensing area;
(109) Cleaning the photoresist by using an acetone solution to obtain an optical waveguide and mass block sensing area structure;
(110) Further processing a mass block, a cantilever spring beam and a support frame structure of the device layer, and spin-coating a layer of photoresist on the surface of the silicon wafer in the step (i);
(111) Carrying out photoetching, exposure and development process operations by using a mask plate to obtain patterns of the mass block, the cantilever spring beam and the support frame;
(112) Etching the silicon wafer by an RIE (reactive ion etching) process according to the pattern obtained in the step (k) to obtain a mass block, a cantilever spring beam and a support frame structure;
(113) Cleaning the residual photoresist on the surface of the silicon wafer after etching by using an acetone solution;
(114) And removing part of the buried oxide layer by using an HF solution to obtain the MOEMS accelerometer structure.
(2) Transferring a graphene structure to an MOEMS accelerometer, and FIG. 8 shows a processing method for transferring graphene to a sensitive unit, which specifically comprises the following steps:
(201) Cleaning and drying the silicon wafer by adopting sulfuric acid and hydrogen peroxide solution, and depositing a layer of SiO on the surface of the silicon wafer by utilizing a Low Pressure Chemical Vapor Deposition (LPCVD) process 2 In SiO 2 Spin-coating a layer of photoresist on the surface;
(202) And photoetching by using a mask with a strip pattern, and exposing and developing to obtain parallel strip patterns on the photoresist layer.
(203) SiO by RIE process pairing 2 Etching is carried out, and the photoresist is cleaned by adopting acetone solution, so that a square groove structure is obtained;
(204) Further to the etched SiO 2 Cleaning and drying the surface on SiO 2 And spinning a layer of photoresist on the surface, and carrying out photoetching, exposure and development operations through a mask plate with the strip patterns to obtain the parallel strip patterns on the photoresist layer.
(205) Adopts magnetron sputtering technology to deposit SiO 2 Depositing a metal film on the groove;
(206) Stripping off SiO by acetone solution 2 The metal film and the photoresist overflowing from the groove only leave SiO 2 A metal film in the groove;
(207) By CVD on SiO 2 Growing a graphene strip on the surface of the metal film in the groove;
(208) A PMMA layer is spin-coated on the metal film on which the graphene grows;
(209) SiO on a silicon substrate 2 Putting the sample with the PMMA/graphene strip/metal film in the groove into a prepared HF corrosion solution;
(210) Etching off SiO in HF etching solution 2 A layer such that the PMMA/graphene ribbon/metal film will float to the surface of the solution and separate from the silicon substrate;
(211) Transferring PMMA/graphene ribbons/metal films to a pre-formulated FeCl-containing film 3 Method for producing HClIn the corrosive liquid, completely dissolving the metal film on the bottom layer, and floating the residual PMMA/graphene band film to the surface of the solution;
(212) Putting the PMMA/graphene band film into deionized water, and easily cleaning for multiple times;
(213) Transferring the PMMA/graphene band film to a mass block sensing area in a MOEMS accelerometer structure which is processed before, vertically fishing out a PMMA/graphene band from one side of the sensing area of a silicon wafer to the water surface, enabling the PMMA/graphene band to be adhered to a specified area of the silicon wafer, namely adhering to the mass block sensing area, cleaning the PMMA/graphene band attached to the silicon wafer, cleaning and drying the silicon wafer with the PMMA/graphene band, and obtaining the graphene with stable adhesion on the silicon surface of the mass block sensing area.
(214) Putting the mass block sensing area with the PMMA/graphene belt on the surface into an acetone solution to dissolve PMMA, and transferring the remaining pure graphene belt to the mass block sensing area to obtain a graphene/silicon wafer sample with the graphene belt attached to the mass block sensing area;
(215) And cleaning and drying the graphene/silicon wafer structure sample to obtain a sensitive unit in the graphene MOEMS accelerometer structure.
While the present invention has been described in detail with reference to the above embodiments, the best mode for carrying out the invention is not to be construed as limiting the design concept of the present invention, and it should be noted that various modifications and equivalent variations can be made by those skilled in the art without departing from the design concept of the present invention, and all such modifications and variations that fall within the scope of the present invention are to be considered within the scope of the present invention. The above embodiments are the best mode for carrying out the invention, and the embodiments of the invention are only to explain the technical solutions specifically, but not to limit the invention, and all modifications, equivalent variations or improvements made to the technical solutions of the invention are within the protection scope of the technical solutions of the invention without departing from the concept and design of the invention.
Claims (8)
1. A based on graphite alkene MOEMS accelerometer, its characterized in that: the device comprises a bottom substrate layer (3), an oxide buried layer (2) deposited on the bottom substrate layer (3), and a device structure layer (1) deposited on the oxide buried layer (2); a plurality of hole structures with different shapes are formed in the device structure layer (1), and air is filled in the hole structures; the device structure layer (1) comprises a supporting frame (1-5) and a mass block (1-1) arranged in the middle of the supporting frame (1-5), the left side and the right side of the mass block (1-1) are connected with the supporting frame (1-5) through cantilever beam springs (1-3), the upper end and the lower end of the middle part of the mass block (1-1) in the longitudinal direction are respectively outwards protruded to form a mass block sensing area (1-7), graphene belts (1-6) are periodically laid on the mass sensing area (1-7) in a belt array to form a sensing unit (1-2), optical waveguides (1-4) are symmetrically arranged at the left side and the right side of the sensing unit (1-2) at the upper end and the lower end of the supporting frame (1-5), and an optical fiber interface (4) is arranged on each optical waveguide (1-4).
2. The graphene MOEMS-based accelerometer according to claim 1, wherein: the bottom substrate layer (3) is of a cuboid structure and used for supporting the whole device structure layer (1), the material of the bottom substrate layer (3) is any one of silicon carbide, silicon nitride and sapphire, and silicon is preferably selected as the material of the bottom substrate layer (3).
3. The graphene MOEMS-based accelerometer according to claim 1, wherein: the buried oxide layer (2) is used for releasing the integral device structure layer (1) and connecting the bottom substrate layer (3) and the device structure layer (1), the buried oxide layer (2) is in a square frame shape, the buried oxide layer is made of any one of sapphire, silicon dioxide and titanium dioxide, and the preferable material is silicon dioxide.
4. The graphene MOEMS-based accelerometer according to claim 1, wherein: the thicknesses of the mass block (1-1), the cantilever spring beam (1-3) and the supporting frame (1-5) are the same, the heights of the optical waveguide (1-4) and the mass block sensing region (1-7) are consistent, the mass block (1-1), the mass block sensing region (1-7), the optical waveguide (1-4), the cantilever spring beam (1-3) and the supporting frame (1-5) in the device structure layer are made of any one of silicon and silicon nitride, and silicon is preferably selected.
5. The graphene-based MOEMS accelerometer of claim 1, wherein: the width and the length of the device structure layer (1), the oxide buried layer (2) and the bottom substrate layer (3) are consistent.
6. A processing method based on graphene MOEMS accelerometer as claimed in any one of claims 1-5, characterized in that the method comprises the following steps:
(1) Drying the surface of the bottom substrate layer, depositing an oxide buried layer on the surface of the bottom substrate layer by using a low-pressure chemical vapor deposition process, further depositing a device layer on the surface of the oxide buried layer, and then sequentially processing the device layer through glue coating, exposure, development, etching and photoresist removing to form an optical waveguide and mass block sensing area structure, a mass block, a cantilever spring beam and a support frame structure;
(2) And manufacturing a graphene belt, transferring the manufactured graphene belt to a mass block sensing area, and finally cleaning and drying.
7. The processing method based on the graphene MOEMS accelerometer according to claim 6, wherein the step (1) specifically comprises the following steps:
(101) Cleaning: cleaning the bottom substrate layer by using a sulfuric acid and hydrogen peroxide solution, drying the surface of the bottom substrate layer by adopting low-temperature baking, depositing an oxide layer on the surface of the bottom substrate layer by using a low-pressure chemical vapor deposition process, and further depositing a silicon/silicon nitride device layer on the surface of the oxide layer;
(102) Gluing: uniformly spin-coating a layer of photoresist with a custom thickness on the upper surface of the semi-finished product obtained in the step (101) by adopting a rotary glue coating method, and further heating and drying the rotary photoresist;
(103) Exposure and development: selectively exposing the photoresist outside the optical waveguide and the mass block sensing area by using a mask plate, placing the exposed photoresist in a developing solution after exposure is finished, and carrying out photochemical reaction on the exposed photoresist in the designated area and the developing solution to leave the unexposed part of the photoresist so as to obtain patterns of the optical waveguide and the mass block sensing area;
(104) Etching, namely etching the surface of the semi-finished product obtained in the step (103) by utilizing reactive ion etching to obtain the optical waveguide and the upper part structure of the mass block sensing area;
(105) Removing the photoresist: cleaning the residual photoresist on the surface of the product after the etching in the step (104) by using an acetone solution;
(106) Further cleaning and drying the surface of the product obtained in the step (105), and then spin-coating a layer of photoresist on the surface of the product;
(107) Carrying out photoetching, exposure and development process operations by using a mask plate to obtain a partial pattern under a sensing area of the mass block;
(108) Etching the surface of the product obtained in the step (107) by utilizing a reactive ion etching process to obtain a lower part structure of the mass block sensing area;
(109) Cleaning the photoresist by using an acetone solution to obtain an optical waveguide and mass block sensing area structure;
(110) Further processing the mass block, the cantilever spring beam and the support frame structure of the device layer, and spin-coating a layer of photoresist on the surface of the product obtained in the step (i);
(111) Carrying out photoetching, exposure and developing process operations by using a mask plate to obtain patterns of the mass block, the cantilever spring beam and the support frame;
(112) Etching the silicon wafer through an RIE process according to the pattern obtained in the step (111) to obtain a mass block, a cantilever spring beam and a support frame structure;
(113) Cleaning the residual photoresist on the surface of the product after etching by using an acetone solution;
(114) A portion of the buried oxide layer is removed by a hydrogen fluoride solution.
8. The processing method based on the graphene MOEMS accelerometer according to claim 6, wherein the step (2) specifically comprises the following steps:
(201) Cleaning and drying the silicon wafer by adopting sulfuric acid and hydrogen peroxide solution, and depositing a layer of SiO on the surface of the silicon wafer by utilizing a low-pressure chemical vapor deposition process 2 In SiO 2 Spin-coating a layer of photoresist on the surface;
(202) Photoetching by using a mask with a strip pattern, and exposing and developing to obtain parallel strip patterns on the photoresist layer;
(203) SiO by RIE process couple 2 Etching is carried out, and the photoresist is cleaned by adopting acetone solution, so that a square groove structure is obtained;
(204) Further to the etched SiO 2 Cleaning and drying the surface on SiO 2 Spinning a layer of photoresist on the surface, and carrying out photoetching, exposure and development operations through a mask plate of the strip-shaped patterns to obtain parallel strip-shaped patterns on the photoresist layer;
(205) Adopts magnetron sputtering technology to form SiO 2 Depositing a metal film on the groove;
(206) Stripping off SiO by acetone solution 2 The metal film and the photoresist overflowing from the groove only leave SiO 2 A metal film in the groove;
(207) By vapour deposition on SiO 2 Growing a graphene strip on the surface of the metal film in the groove;
(208) A PMMA layer is spin-coated on the metal film on which the graphene strip grows;
(209) SiO on a silicon substrate 2 Putting the sample with the metal film, the graphene band and the PMMA in the groove into a prepared HF corrosion solution;
(210) Etching away SiO in HF corrosive solution 2 A layer such that the PMMA, graphene ribbon/metal film will float to the surface of the solution and separate from the silicon substrate;
(211) Transferring PMMA and graphene strips/metal films to a prepared FeCl-containing film 3 In HCl corrosive liquid, completely dissolving the metal film on the bottom layer, and floating the residual PMMA/graphene band film on the surface of the solution;
(212) Putting the PMMA/graphene band film into deionized water, and easily cleaning for multiple times;
(213) Transferring a PMMA/graphene strip film to a mass block sensing area in the MOEMS accelerometer structure processed in the step (1), vertically taking out a PMMA/graphene-containing strip from one side of the sensing area of a silicon wafer to water surface, enabling the PMMA/graphene strip to be adhered to a specified area of the silicon wafer, namely adhering to the mass block sensing area, cleaning PMMA/graphene attached to the silicon wafer, cleaning and drying the silicon wafer with the PMMA/graphene strip to obtain graphene firmly attached to a sensing unit of the silicon wafer;
(214) Putting the graphene band/PMMA/silicon wafer sample into an acetone solution to dissolve PMMA, and transferring the residual pure graphene band to the mass block sensing area to obtain the graphene band/silicon wafer sample with the graphene band attached to the mass block sensing area;
(215) And cleaning and drying the graphene strip/silicon wafer structure sample to obtain a sensitive unit in the graphene MOEMS accelerometer structure.
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