CN115148433A - Method for improving etching morphology of F-based vanadium oxide - Google Patents
Method for improving etching morphology of F-based vanadium oxide Download PDFInfo
- Publication number
- CN115148433A CN115148433A CN202210683758.4A CN202210683758A CN115148433A CN 115148433 A CN115148433 A CN 115148433A CN 202210683758 A CN202210683758 A CN 202210683758A CN 115148433 A CN115148433 A CN 115148433A
- Authority
- CN
- China
- Prior art keywords
- vanadium oxide
- etching
- preset
- improving
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910001935 vanadium oxide Inorganic materials 0.000 title claims abstract description 116
- 238000005530 etching Methods 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000007789 gas Substances 0.000 claims abstract description 62
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 27
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000001257 hydrogen Substances 0.000 claims abstract description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 27
- 230000000873 masking effect Effects 0.000 claims abstract description 13
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 28
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 8
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 6
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 3
- QUEDYRXQWSDKKG-UHFFFAOYSA-M [O-2].[O-2].[V+5].[OH-] Chemical compound [O-2].[O-2].[V+5].[OH-] QUEDYRXQWSDKKG-UHFFFAOYSA-M 0.000 claims description 3
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 65
- 229920000642 polymer Polymers 0.000 description 21
- 239000010410 layer Substances 0.000 description 12
- 239000000047 product Substances 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- NFVUDQKTAWONMJ-UHFFFAOYSA-I pentafluorovanadium Chemical compound [F-].[F-].[F-].[F-].[F-].[V+5] NFVUDQKTAWONMJ-UHFFFAOYSA-I 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IBYSTTGVDIFUAY-UHFFFAOYSA-N vanadium monoxide Chemical compound [V]=O IBYSTTGVDIFUAY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 on one hand Chemical compound 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The application discloses a method for improving the etching morphology of F-based vanadium oxide, which comprises the following steps: placing a product to be etched in a preset cavity, wherein the product to be etched comprises a substrate, a vanadium oxide film covering the surface of the substrate and a masking layer covering the surface of the vanadium oxide film; adjusting the temperature of the preset cavity to a preset temperature, and filling etching gas into the preset cavity, wherein the etching gas comprises carbon tetrafluoride and fluorocarbon gas containing hydrogen; forming plasma by using the etching gas by using a first preset radio frequency wave; and bombarding the vanadium oxide film on the unshielded part of the masking layer by using the second preset radio frequency wave along the preset direction to form an etching groove. According to the method for improving the etching morphology of the F-based vanadium oxide, the etching morphology of the vanadium oxide is improved by adding the hydrogen-containing fluorocarbon gas into the etching process, so that the etching of the side wall is greatly reduced, the etched side wall generated by processing can form an included angle of 86-90 degrees, and the method can improve the processing yield.
Description
Technical Field
The application relates to the field of vanadium oxide film etching, in particular to a method for improving the etching morphology of F-based vanadium oxide.
Background
Vanadium oxide has a high temperature coefficient of resistance and less thermal noise, and thus vanadium oxide is often used to fabricate thermistors. The manufacturing process of the vanadium oxide thermistor generally comprises the following steps: firstly, sputtering a layer of vanadium oxide film through physical vapor deposition, then forming a mask with a pattern through a photoetching process, and finally copying the mask pattern onto the vanadium oxide film through an etching process to form the vanadium oxide thermistor. The morphology of the vanadium oxide thermistor can affect the coverage of subsequent metal films, and further affect the electrical conduction between the vanadium oxide film and the bottom layer circuit.
In the prior art, carbon tetrafluoride gas is mostly adopted to etch the vanadium oxide film, but the volatilization speed of a polymer generated in the reaction of carbon tetrafluoride and vanadium oxide is high, and the polymer is not easy to deposit on the side wall of the vanadium oxide film to form a protective layer, so that the carbon tetrafluoride penetrating into the vanadium oxide reacts with the surrounding vanadium oxide, and the shape of the generated etching groove is greatly different from the expected shape. As shown in fig. 1, after the vanadium oxide film is etched by using carbon tetrafluoride gas, the etched groove formed on the vanadium oxide film is arc-shaped, and then when a metal film is sputtered on the vanadium oxide film with the shape, the problem that the vanadium oxide thermistor cannot be completely coated by the metal film is caused, so that the yield of the product is reduced.
Therefore, how to improve the etching morphology of the F-based vanadium oxide becomes a technical problem to be solved by the technical personnel in the field.
Disclosure of Invention
The application provides a method for improving the etching morphology of F-based vanadium oxide, which can effectively improve the etching morphology of vanadium oxide, so that the included angle between the side wall of an etching groove formed by etching a vanadium oxide film and a substrate is between 86 and 90 degrees, and the yield of products is improved.
The application provides the following scheme:
a method for improving the etching morphology of F-based vanadium oxide comprises the following steps:
placing a product to be etched in a preset cavity, wherein the product to be etched comprises a substrate, a vanadium oxide film covering the surface of the substrate and a masking layer covering the surface of the vanadium oxide film;
adjusting the temperature of the preset cavity to a preset temperature, and filling etching gas into the preset cavity, wherein the etching gas comprises carbon tetrafluoride and fluorocarbon gas containing hydrogen;
forming plasma by the etching gas by using a first preset radio frequency wave;
and bombarding the part of the vanadium oxide film which is not shielded by the masking layer by the plasma along a preset direction by using a second preset radio frequency wave to form an etching groove, so that the purpose of copying the mask pattern onto the vanadium oxide film is achieved.
Further, the hydrogen-containing fluorocarbon gas includes monofluoromethane, difluoromethane and trifluoromethane. On one hand, hydrogen can increase the production of polymers in the F-based etching process, and on the other hand, hydrogen can inhibit the volatilization of the polymers produced in the F-based etching process, so that the polymers are more easily deposited on the side wall of the vanadium oxide film to form a protective layer and avoid the occurrence of transverse etching.
Furthermore, besides the etching gas, a proper amount of auxiliary gas can be added, and the auxiliary gas can participate in pressure regulation to enable the pressure in the cavity to reach a preset value. The auxiliary gas includes, but is not limited to, argon, oxygen, nitrogen, helium, and the like.
Furthermore, the flow ratio of the carbon tetrafluoride to the trifluoromethane is (4-1) to (2-1). Preferably, the flow ratio of the carbon tetrafluoride and the trifluoromethane is 2: 1.
Further, the preset temperature is any value of 30-60 ℃. The temperature has a certain influence on the etching speed, the etching speed is reduced due to the excessively low temperature, and the unique properties of some materials to be etched are lost due to the temperature increase although the etching speed is increased, so that the proper temperature is very important.
Furthermore, the frequency of the first preset radio frequency is 10-20MHz, and the frequency of the second preset radio frequency is 2-15MHz. Preferably, the frequency of the first preset radio frequency is 13.56MHz, and the frequency of the second preset radio frequency is 2MHz or 13.56MHz.
Furthermore, the included angle between the side wall of the etching groove and the substrate is 86-90 degrees.
Further, the pressure in the preset cavity is between 3 and 15MT, and preferably, the gas pressure is between 5 and 8 MT.
Further, the vanadium oxide film comprises one or more of vanadium monoxide, vanadium dioxide, vanadium trioxide and vanadium pentoxide.
According to the specific embodiments provided herein, the present application discloses the following technical effects:
according to the method for improving the etching morphology of the F-based vanadium oxide, the etching morphology of the vanadium oxide is improved by adding the fluorocarbon gas containing hydrogen in the etching process. On one hand, the hydrogen can increase the generation of polymers in the F-based etching process, on the other hand, the hydrogen can inhibit the volatilization of the polymers generated in the F-based etching process, so that the polymers are easier to deposit on the side wall of the vanadium oxide film to form a protective layer, prevent fluorocarbon gas from further reacting with the vanadium oxide film on the side wall, greatly reduce the etching of the side wall, and finally obviously improve the etching morphology of the F-based vanadium oxide, and the included angle between the side wall and the substrate is 86-90 degrees.
Of course, it is not necessary for any product to achieve all of the above-described advantages at the same time for the practice of the present application.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of the morphology of F-based etched vanadium oxide in the prior art.
FIG. 2 is a schematic view of the morphology of F-based etched vanadium oxide after hydrogen-containing fluorocarbon gas is added.
FIG. 3 is a flowchart of a method for improving an F-based vanadium oxide etching morphology provided by the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely below, and it should be understood that the described embodiments are only a part of the embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application are within the scope of protection of the present application.
As described in the background art, carbon tetrafluoride gas is mostly used in the existing etching method to etch the vanadium oxide film, and since the volatilization speed of the polymer generated by the reaction of carbon tetrafluoride with vanadium oxide is fast, the polymer is not easy to deposit on the side wall of the vanadium oxide film to form a protective layer, so that the carbon tetrafluoride penetrating into the vanadium oxide reacts with the surrounding vanadium oxide, and the shape of the generated etching groove is greatly different from the expected shape. As shown in fig. 1, after the vanadium oxide film is etched by using carbon tetrafluoride gas, the etched groove formed on the vanadium oxide film is arc-shaped, and then when a metal film is sputtered on the vanadium oxide film with the shape, the problem that the vanadium oxide thermistor cannot be completely coated by the metal film is caused, so that the yield of the product is reduced. Therefore, the method for improving the etching morphology of the F-based vanadium oxide is provided, and hydrogen-containing fluorocarbon gas is added on the basis of carbon tetrafluoride gas. On the one hand, the hydrogen can increase the production of polymers in the F-based etching process, and on the other hand, the hydrogen can inhibit the volatilization of the polymers produced in the F-based etching process, so that the polymers are more easily deposited on the side wall of the vanadium oxide film to form a protective layer, prevent the fluorocarbon gas from further reacting with the vanadium oxide film on the side wall, greatly reduce the etching of the side wall, and finally obviously improve the etching morphology of the F-based vanadium oxide, and the included angle between the side wall and the substrate is 86-90 degrees.
Fig. 3 is a flowchart of a method for improving an F-based vanadium oxide etching morphology provided by the present application, and as shown in fig. 3, the method for improving the F-based vanadium oxide etching morphology includes:
s1: and placing a product to be etched in a preset cavity, wherein the product to be etched comprises a substrate, a vanadium oxide film covering the surface of the substrate and a masking layer covering the surface of the vanadium oxide film.
The preset cavity is a closed vacuum cavity, active fluorine-based charged ions can be generated under the action of radio frequency waves due to the fact that the fluorine-based gas used in the application is easy to generate oxidation reaction with other gases, and therefore the preset cavity is a vacuum cavity and is prevented from losing reaction efficiency due to the fact that the charged ions are influenced by other gases before reacting with vanadium oxide.
The substrate mainly plays a role in supporting and improving the characteristics of the film, the film is grown on the substrate, and the material properties of the substrate have a great influence on the characteristics of the film.
In this embodiment, the masking layer is a patterned photoresist, and in the photolithography process, the patterned photoresist is coated on the vanadium oxide film, and the pattern on the mask is transferred onto the vanadium oxide film through the processes of exposure, development, etching, and the like, so as to form a pattern completely corresponding to the mask layer.
S2: and adjusting the temperature of the preset cavity to a preset temperature, and filling etching gas into the preset cavity, wherein the etching gas comprises carbon tetrafluoride and fluorocarbon gas containing hydrogen.
The temperature has a certain influence on the etching speed, the etching speed is reduced due to the low temperature, and the unique properties of materials needing to be etched can be lost due to the temperature increase although the etching speed is increased, so that the proper temperature is very important. The preset temperature is any value of 30-60 ℃. More specifically, the predetermined temperatures are 30 ℃, 40 ℃, 50 ℃ and 60 ℃, preferably 40 ℃, and are not exhaustive herein for the sake of brevity.
In the prior art, carbon tetrafluoride is usually adopted to etch a vanadium oxide film, vanadium oxide reacts with charged plasma to generate vanadium fluoride, and due to the fact that the boiling point of vanadium fluoride is relatively low, generated byproducts can volatilize quickly, so that carbon tetrafluoride penetrating into vanadium oxide and surrounding vanadium oxide continue to react, and the difference between the shape of the generated etching groove and the expected shape is large. In the embodiment of the application, a certain amount of fluorocarbon gas containing hydrogen is added on the basis of carbon tetrafluoride, on one hand, hydrogen can increase the production of polymers in the F-based etching process, and on the other hand, hydrogen can inhibit the volatilization of the polymers produced in the F-based etching process, so that the polymers are more easily deposited on the side wall of the vanadium oxide film to form a protective layer, and the occurrence of transverse etching is avoided. As shown in fig. 2, the included angle between the sidewall of the etched groove formed by etching the vanadium oxide film and the substrate is 86 to 90 degrees.
The hydrogen-containing fluorocarbon gas includes monofluoromethane, difluoromethane and trifluoromethane. The flow ratio of the carbon tetrafluoride to the trifluoromethane is (4-1) to (2-1). Preferably, the flow ratio of the carbon tetrafluoride and the trifluoromethane is 2: 1. The boiling point of vanadium fluoride generated by the reaction of carbon tetrafluoride and the vanadium oxide film is relatively low, and the generated by-product can be volatilized quickly, so that the fast etching rate is ensured, but the phenomenon of side etching of the vanadium oxide film is also brought. In order to ensure a certain etching rate, a certain amount of trifluoromethane is added on the basis of carbon tetrafluoride, and the flow ratio of the carbon tetrafluoride to the trifluoromethane is set to be 2: 1, so that a certain etching rate can be ensured, and the side etching phenomenon of the vanadium oxide film can be reduced.
Furthermore, besides the etching gas, a proper amount of auxiliary gas can be added, and the auxiliary gas can participate in pressure regulation to enable the pressure in the cavity to reach a preset value. The auxiliary gas includes, but is not limited to, argon, oxygen, nitrogen, helium, etc., and may be selected by a user according to the requirement, which is not further limited herein.
The proper gas pressure is beneficial to improving the ionization rate of gas and improving the etching efficiency. The gas pressure is between 3-15MT, preferably, the gas pressure is between 5-8 MT. More specifically, the gas pressure is 3MT, 5MT, 8MT, 10MT, 12MT and 15MT, preferably 5MT, and is not exhaustive here in terms of space.
S3: and forming plasma by using the etching gas by using a first preset radio frequency wave.
Specifically, the frequency of the first predetermined radio frequency is 10-20MHz, more specifically, the frequency of the first predetermined radio frequency is 10MHz, 13MHz, 13.56MHz, 17MHz and 20MHz, and preferably 13.56MHz, which is not exhaustive herein.
S4: and bombarding the part of the vanadium oxide film which is not shielded by the masking layer by the plasma along a preset direction by using a second preset radio frequency wave to form an etching groove.
In particular, the frequency of the second predetermined radio frequency is 2-15MHz, more particularly, the frequency of the second predetermined radio frequency is 2MHz, 5MHz, 10MHz, 13.56MHz, 17MHz and 20MHz, preferably 2MHz and 13.56MHz, which is not exhaustive herein. The predetermined direction includes, but is not limited to, a vertical direction along the vanadium oxide thin film.
In the embodiment of the application, fluorine-based gas (carbon tetrafluoride and fluorocarbon gas containing hydrogen) is introduced into the vacuum chamber to form a certain pressure, and is ionized to form plasma under the action of a first preset radio frequency wave, and the charged plasma is accumulated above the vacuum chamber and continuously moves towards the direction of the substrate. Due to the presence of the magnetic field in the chamber, the charged plasma has a certain potential energy, which moves in the direction of the magnetic field. And then, applying second preset radio frequency waves to change the direction and the position of the magnetic field in the cavity to a certain degree, and drawing the charged plasma to bombard the vanadium oxide film in the direction vertical to the vanadium oxide film so as to meet the requirement of the charged plasma on the etching reaction of the vanadium oxide film.
Further, the vanadium oxide film comprises one or more of vanadium monoxide, vanadium dioxide, vanadium trioxide and vanadium pentoxide. Since the vanadium oxide film generates the above-mentioned compounds during processing and contains a plurality of components, the vanadium oxide film is allowed to contain the above-mentioned random composition ratio in consideration of objective conditions to be overcome by etching techniques, so as to ensure that the etching method can cope with films containing various kinds of vanadium oxide, thereby further improving the applicability of the etching method.
The advantageous effects of the present application will be further described below with reference to examples and comparative examples.
Example 1
Placing a product to be etched in a preset cavity, wherein the product to be etched comprises a silicon nitride substrate, a vanadium oxide film covering the surface of the silicon nitride substrate and a masking layer (photoresist with patterns) covering the surface of the vanadium oxide film;
adjusting the temperature of a preset cavity to 40 ℃, and filling etching gases of carbon tetrafluoride and trifluoromethane into the preset cavity, wherein the flow ratio of the carbon tetrafluoride to the trifluoromethane is 2: 1, and the pressure in the cavity is 5MT;
forming the etching gas into plasma by using radio frequency wave with the frequency of 13.56 MHz;
utilizing radio frequency wave with the frequency of 13.56MHz to enable plasma to bombard the vanadium oxide film on the part, which is not shielded by the masking layer, of the vanadium oxide film along the direction vertical to the vanadium oxide film to form an etching groove;
and measuring the included angle between the side wall of the etching groove and the silicon nitride substrate.
Example 2
The difference compared to example 1 is that the flow ratio of carbon tetrafluoride and trifluoromethane was 4: 1.
Example 3
The difference compared to example 1 is the use of difluoromethane instead of trifluoromethane.
Comparative example 1
Placing a product to be etched in a preset cavity, wherein the product to be etched comprises a silicon nitride substrate, a vanadium oxide film covering the surface of the silicon nitride substrate and a masking layer (photoresist with patterns) covering the surface of the vanadium oxide film;
adjusting the temperature of a preset cavity to 40 ℃, and filling etching gas carbon tetrafluoride into the preset cavity, wherein the pressure in the cavity is 5MT;
forming the etching gas into plasma by using radio frequency wave with the frequency of 13.56 MHz;
utilizing radio frequency wave with the frequency of 13.56MHz to enable plasma to bombard the vanadium oxide film on the part, which is not shielded by the masking layer, of the vanadium oxide film along the direction vertical to the vanadium oxide film to form an etching groove;
and measuring the included angle between the side wall of the etching groove and the silicon nitride substrate.
TABLE 1 Included angle between the sidewall of etched groove of vanadium oxide thin film and silicon nitride substrate prepared in examples 1-3 and comparative example 1
| Included angle | |
| Example 1 | 87 degree |
| Example 2 | 86 degrees |
| Example 3 | 88 degree |
| Comparative example 1 | 81 degree |
From the measurement results of table 1 above, it can be seen that:
1. from the results of the measurements of examples 1 to 3 and comparative example 1, it can be seen that in the vanadium oxide etching process, hydrogen-containing fluorocarbon gas was added in addition to carbon tetrafluoride gas, and the included angles between the side walls of the etching trenches and the silicon nitride substrate were between 86 degrees and 90 degrees, which are both larger than the etching angles when only carbon tetrafluoride gas was added and no hydrogen-containing fluorocarbon gas was added. Therefore, the hydrogen increases the generation of polymers in the F-based etching process, and can inhibit the generated polymers from volatilizing, so that the polymers are easier to deposit on the side wall of the vanadium oxide film to form a protective layer, prevent the fluorocarbon gas from further reacting with the vanadium oxide film on the side wall, and enable the included angle between the side wall of the etching groove and the silicon nitride substrate to be 86-90 degrees.
2. From the results of the measurements of examples 1 to 3, it is understood that the etching angle is closer to 90 degrees as the hydrogen ratio of the hydrogen-containing fluorocarbon gas is increased under a certain etching condition. The results show that more polymers can be generated with the increase of the proportion of hydrogen in the fluorocarbon gas, and the more polymers are deposited on the side wall of the vanadium oxide film to form a protective layer, so that the reaction between the fluorocarbon gas and the vanadium oxide film on the side wall can be prevented in time, and the included angle between the side wall of the etching groove and the silicon nitride substrate is close to 90 degrees.
The method for improving the etching morphology of the F-based vanadium oxide is described in detail, specific examples are applied in the method for explaining the principle and the implementation mode of the method, and the description of the examples is only used for helping to understand the method and the core idea of the method; meanwhile, for a person skilled in the art, according to the idea of the present application, the specific embodiments and the application range may be changed. In view of the above, the description should not be taken as limiting the application.
Claims (10)
1. A method for improving the etching morphology of F-based vanadium oxide is characterized by comprising the following steps:
placing a product to be etched in a preset cavity, wherein the product to be etched comprises a substrate, a vanadium oxide film covering the surface of the substrate and a masking layer covering the surface of the vanadium oxide film;
adjusting the temperature of the preset cavity to a preset temperature, and filling etching gas into the preset cavity, wherein the etching gas comprises carbon tetrafluoride and fluorocarbon gas containing hydrogen;
forming plasma by the etching gas by using a first preset radio frequency wave;
and bombarding the part of the vanadium oxide film which is not shielded by the masking layer by the plasma along a preset direction by using a second preset radio frequency wave to form an etching groove.
2. The method for improving F-based vanadium oxide etching morphology according to claim 1, wherein the hydrogen-containing fluorocarbon gas comprises monofluoromethane, difluoromethane and trifluoromethane.
3. The method for improving the F-based vanadium oxide etching morphology according to claim 2, wherein the flow ratio of the carbon tetrafluoride to the trifluoromethane is (4-1) to (2-1).
4. The method for improving the F-based vanadium oxide etching morphology according to claim 1, wherein the preset temperature is any one value in a range of 30-60 ℃.
5. The method for improving the F-based vanadium oxide etching morphology according to claim 4, wherein the preset temperature is 40 ℃.
6. The method for improving the F-based vanadium oxide etching morphology according to claim 1, wherein the frequency of the first preset radio frequency is 10-20MHz, and the frequency of the second preset radio frequency is 2-15MHz.
7. The method for improving the F-based vanadium oxide etching morphology according to claim 6, wherein the frequency of the first preset radio frequency is 13.56MHz, and the frequency of the second preset radio frequency is 2MHz or 13.56MHz.
8. The method for improving the F-based vanadium oxide etching morphology according to claim 1, wherein an included angle between the side wall of the etching groove and the substrate is 86-90 degrees.
9. The method for improving F-based vanadium oxide etching morphology according to claim 1, wherein the pressure in the preset cavity is between 3MT and 15 MT.
10. The method for improving the F-based vanadium oxide etching morphology according to claim 1, wherein the vanadium oxide film comprises one or more of vanadium oxide, vanadium dioxide, vanadium trioxide and vanadium pentoxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210683758.4A CN115148433A (en) | 2022-06-15 | 2022-06-15 | Method for improving etching morphology of F-based vanadium oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210683758.4A CN115148433A (en) | 2022-06-15 | 2022-06-15 | Method for improving etching morphology of F-based vanadium oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115148433A true CN115148433A (en) | 2022-10-04 |
Family
ID=83408022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210683758.4A Pending CN115148433A (en) | 2022-06-15 | 2022-06-15 | Method for improving etching morphology of F-based vanadium oxide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115148433A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4390394A (en) * | 1981-01-27 | 1983-06-28 | Siemens Aktiengesellschaft | Method of structuring with metal oxide masks by reactive ion-beam etching |
| CN102117738A (en) * | 2010-12-31 | 2011-07-06 | 中微半导体设备(上海)有限公司 | Method for rounding vertex angle of silicon wafer by using polymer containing fluorocarbon |
| CN103531464A (en) * | 2012-07-03 | 2014-01-22 | 中国科学院微电子研究所 | Etching method for silicon nitride high depth-to-width ratio hole |
| CN104332392A (en) * | 2014-09-04 | 2015-02-04 | 北方广微科技有限公司 | Dry etching method of anisotropic VO2 |
| CN107154331A (en) * | 2017-05-12 | 2017-09-12 | 中国科学院微电子研究所 | The method of the anisotropic oxide etching of vanadium |
| CN113948400A (en) * | 2021-10-15 | 2022-01-18 | 无锡尚积半导体科技有限公司 | Process method for improving etching morphology of vanadium oxide |
-
2022
- 2022-06-15 CN CN202210683758.4A patent/CN115148433A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4390394A (en) * | 1981-01-27 | 1983-06-28 | Siemens Aktiengesellschaft | Method of structuring with metal oxide masks by reactive ion-beam etching |
| CN102117738A (en) * | 2010-12-31 | 2011-07-06 | 中微半导体设备(上海)有限公司 | Method for rounding vertex angle of silicon wafer by using polymer containing fluorocarbon |
| CN103531464A (en) * | 2012-07-03 | 2014-01-22 | 中国科学院微电子研究所 | Etching method for silicon nitride high depth-to-width ratio hole |
| CN104332392A (en) * | 2014-09-04 | 2015-02-04 | 北方广微科技有限公司 | Dry etching method of anisotropic VO2 |
| CN107154331A (en) * | 2017-05-12 | 2017-09-12 | 中国科学院微电子研究所 | The method of the anisotropic oxide etching of vanadium |
| CN113948400A (en) * | 2021-10-15 | 2022-01-18 | 无锡尚积半导体科技有限公司 | Process method for improving etching morphology of vanadium oxide |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5302240A (en) | Method of manufacturing semiconductor device | |
| JP5207406B2 (en) | Plasma processing method | |
| US5240554A (en) | Method of manufacturing semiconductor device | |
| WO2011031858A1 (en) | High aspect ratio silicon oxide etch | |
| JPS6352118B2 (en) | ||
| JPH0245927A (en) | Etching method | |
| KR20040102337A (en) | Method for removal of residue from a substrate | |
| KR100299958B1 (en) | Dry etching method | |
| TWI575605B (en) | Pvd aln film with oxygen doping for a low etch rate hardmask film | |
| CN115148433A (en) | Method for improving etching morphology of F-based vanadium oxide | |
| JP3094470B2 (en) | Dry etching method | |
| CN109338365B (en) | Light emitting display device, etching method thereof and display device | |
| JPS61185928A (en) | Pattern forming method | |
| CN111952169A (en) | Polyimide etching method | |
| CN108133888B (en) | Deep silicon etching method | |
| JP2008243918A (en) | Dry etching method | |
| JPH01234578A (en) | Dry etching method for thin copper film | |
| CN113410382B (en) | Chromium-silicon film resistor and preparation method thereof | |
| Min et al. | Improvement of SiO2 pattern profiles etched in CF4 and SF6 plasmas by using a Faraday cage and neutral beams | |
| JPH0121230B2 (en) | ||
| JP7296912B2 (en) | Substrate processing method and substrate processing apparatus | |
| JPS63124420A (en) | Dry etching method | |
| JP3399494B2 (en) | Low gas pressure plasma etching method for WSiN | |
| JP4448807B2 (en) | Etching method | |
| JPS6258663A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |