CN115141019B - Method for preparing p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot heading - Google Patents
Method for preparing p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot heading Download PDFInfo
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Abstract
The invention belongs to the technical field of bismuth telluride-based thermoelectric materials, and particularly relates to a method for preparing a p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot heading. The invention aims to introduce a cumulative hot heading process into the preparation of a p-type bismuth telluride-based thermoelectric material by utilizing the recrystallization principle, the high-density dislocation induces recrystallization in the process of the material under high temperature strain, grains are refined, and meanwhile, the grains preferentially grow along the direction perpendicular to the pressure under the condition of pressurization, so that the p-type bismuth telluride-based thermoelectric material with fine grains and obvious orientation is finally obtained.
Description
Technical Field
The invention belongs to the technical field of bismuth telluride-based thermoelectric materials, and particularly relates to a method for preparing a p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot heading.
Background
Along with the continuous innovation and progress of the technology in various fields, the use environment and conditions of the thermoelectric chip become more severe, and especially the rise of the new technology of 5G brings new opportunities for thermoelectric materials, and simultaneously brings new challenges, so that the thermoelectric chip has gradually developed towards the miniaturization, high performance and high reliability. The microchip is first prepared by dicing 0.2mm by 0.3mm or less, which is not possible with single crystal materials produced by conventional zone melting methods, and therefore it is highly desirable that the materials have excellent mechanical strength while satisfying high ZT values. The main reason for the poor strength of the traditional zone-melting single crystal material is that the grains are coarse, so that the grain refinement is an effective way for improving the strength.
Disclosure of Invention
The invention aims to introduce a cumulative hot heading process into the preparation of a p-type bismuth telluride-based thermoelectric material by utilizing the recrystallization principle, the high-density dislocation induces recrystallization in the process of the material under high temperature strain, grains are refined, and meanwhile, the grains preferentially grow along the direction perpendicular to the pressure under the condition of pressurization, so that the p-type bismuth telluride-based thermoelectric material with fine grains and obvious orientation is finally obtained.
In order to achieve the above purpose, the technical scheme adopted by the invention is a method for preparing a p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot heading, which comprises the following specific steps:
step 1, bi, sb and Te are taken as raw materials according to stoichiometric ratio of Bi x Sb 2-x Te 3 Proportioning, wherein x is more than or equal to 0.3 and less than or equal to 0.52; vacuum packaging and smelting to obtain a crystal bar, carrying out zone smelting on the crystal bar obtained by smelting to obtain a zone-melting crystal bar, crushing the zone-melting crystal bar to prepare powder, and carrying out hot-pressing sintering on the powder to obtain a block, namely a sintered material;
step 2, placing the sintered material prepared in the step 1 into a die cavity of a hot upsetting die, wherein the width of the die cavity is the same as that of the sintered material, and the length of the die cavity is 2-5 times that of the sintered material so as to ensure that the sintered material can be directionally deformed along the length direction during hot upsetting;
step 3, heating the die to enable the temperature of the sintered material to reach 400-510 ℃, immediately performing hot upsetting to enable the sintered material to deform directionally along the length direction until the die cavity is filled, keeping the temperature constant in the hot upsetting process, and immediately cooling after the hot upsetting is completed to obtain a primary hot upsetting material;
step 4, cutting the primary hot upsetting material obtained in the step 3 into 2-4 sections along the length direction, stacking the sections together along the thickness direction, and then placing the sections into a die cavity of the hot upsetting die in the step 2, wherein the width of the die cavity is equal to the width of the sintering material, and the length of the die cavity is 2-5 times of the length of the sintering material, so that the sintering material can be directionally deformed along the length direction during hot upsetting;
and 5, repeating the step 3 and the step 4 for 1-3 times to obtain the p-type bismuth telluride-based thermoelectric material.
In addition, the purity of Bi, te and Se in the step 1 is more than 99.99%.
The encapsulation in step 1 is encapsulation using a borosilicate glass tube or a quartz glass tube.
Moreover, when the high borosilicate glass tube is adopted for packaging, the smelting temperature is 590-650 ℃; when the quartz glass tube is used for packaging, the smelting temperature is 590-850 ℃.
In addition, the zone melting in the step 1 is carried out by a zone melting furnace, and the specific zone melting condition when the high borosilicate glass tube is adopted for packaging is that the zone melting temperature is 650-780 ℃, the crystal pulling rate is 20-35 mm/h, and the diameter of a crystal rod is 30mm; the specific zone-melting condition when the quartz glass tube is adopted for packaging is that the zone-melting temperature is 650-850 ℃, the crystal pulling rate is 20-35 mm/h, and the diameter of the crystal rod is 30mm.
In addition, the specific conditions of hot pressing sintering in the step 1 are that the heating rate is 20-100 ℃/min, the sintering temperature is 410-490 ℃ and the sintering time is 5-20 min.
The heating mode in the step 3 is induction heating, pulse direct current heating or kiln heating.
Moreover, the length direction of the sintered material in step 2 to step 4 is perpendicular to the pressure direction of hot press sintering in step 1. .
Compared with the prior art, the invention has the beneficial effects that: 1. the method utilizes the recrystallization principle to successfully introduce the accumulated hot heading process into the preparation of the p-type bismuth telluride-based thermoelectric material, the high-density dislocation induces recrystallization in the process of the material under high temperature to refine grains, and the grains preferentially grow along the direction perpendicular to the pressure under the condition of pressurization, so that the p-type bismuth telluride-based thermoelectric material with fine grains and obvious orientation is finally obtained; 2. the process is directly oriented to actual production, and can be used for directly preparing large-size high-performance p-type bismuth telluride thermoelectric materials in batches; 3. the equivalent deformation of the non-plastic material can be realized in the same size of the die, the prepared p-type thermoelectric material crystal grains are obviously thinned, and the orientation is obvious, so that the p-type thermoelectric material has high optimal value and high mechanical strength.
Drawings
FIG. 1 is resistivity in an embodiment;
fig. 2 is a seebeck coefficient in the example;
FIG. 3 is thermal conductivity in an example;
fig. 4 shows zT values in the examples.
Detailed Description
The present invention will be described in detail with reference to the following examples, but the present invention is not limited to the following examples.
Example 1
Nominal composition Bi 0.4 Sb 1.6 Te 3 Proportioning, vacuum packaging and smelting, wherein the smelting temperature is 650 ℃. And carrying out zone melting on the melted crystal bar to prepare single crystals, wherein the temperature is 680 ℃, and the pulling speed is 2.5cm/h. And pulverizing the zone-melting single crystal rod by adopting a mechanical crushing mode. Weighing a proper amount of powder, performing hot-pressing sintering, wherein the sintering temperature is 410 ℃, the heating rate is 100 ℃/min, and the sintering time is 15min, and the obtained initial material has the dimensions of 30mm by 100mm. Along the length of the initial materialThe degree direction was cut into 3 segments on average. One section of material is taken and put into a mould, the mould and the material are heated in an induction heating mode, and the heating rate is 30 ℃/min. When the temperature is raised to 470 ℃, heat preservation is carried out, then pressurizing deformation is carried out on the material, cooling is carried out immediately after the deformation is finished, and the cooling rate is 20 ℃/min, so that the primary deformation material with the thickness of 30mm and 10mm and 100mm is obtained. The primary deformation material is divided into 3 sections along the length direction averagely, and is stacked together along the thickness direction and is put into a die, the hot heading step is repeated, and the secondary rolling deformation material with the thickness of 30mm and 10mm and 100mm is obtained, so that a finished product is obtained, and the maximum ZT value of the finished product reaches 1.23.
Example 1
Nominal composition Bi 0.42 Sb 1.58 Te 3 Proportioning, vacuum packaging and smelting, wherein the smelting temperature is 680 ℃. And carrying out zone melting on the melted crystal bar to prepare single crystals, wherein the temperature is 700 ℃, and the pulling speed is 2.8cm/h. And pulverizing the zone-melting single crystal rod by adopting a mechanical crushing mode. Weighing a proper amount of powder, performing hot-pressing sintering at 430 ℃, wherein the heating rate is 90 ℃/min, and the sintering time is 12min, and the obtained initial material has the dimensions of 30mm by 100mm. The starting material was cut into 3 segments on average in the length direction. One section of material is taken and put into a mould, the mould and the material are heated in an induction heating mode, and the heating rate is 15 ℃/min. When the temperature is raised to 490 ℃, heat preservation is carried out, then pressurizing deformation is carried out on the material, cooling is carried out immediately after the deformation is finished, the cooling rate is 20 ℃/min, and the primary deformation material with the thickness of 30mm and 10mm and 100mm is obtained. The primary deformation material is divided into 3 sections along the length direction averagely, and is stacked together along the thickness direction and is put into a die, the hot heading step is repeated, and the secondary rolling deformation material with the thickness of 30mm and 10mm and 100mm is obtained, so that a finished product is obtained, and the maximum ZT value of the finished product reaches 1.28.
Example 1
Nominal composition Bi 0.5 Sb 1.5 Te 3 Proportioning, vacuum packaging and smelting, wherein the smelting temperature is 750 ℃. And carrying out zone melting on the melted crystal bar to prepare single crystals, wherein the temperature is 730 ℃, and the pulling speed is 3cm/h. And pulverizing the zone-melting single crystal rod by adopting a mechanical crushing mode. Weighing appropriate amount of powder, hot pressing and sintering at a sintering temperatureThe temperature is 520 ℃, the heating rate is 80 ℃/min, the sintering time is 10min, and the obtained initial material size is 30mm x 100mm. The starting material was cut into 3 segments on average in the length direction. One section of material is taken and put into a mould, the mould and the material are heated in an induction heating mode, and the heating rate is 20 ℃/min. When the temperature is raised to 530 ℃, heat preservation is carried out, then pressurizing deformation is carried out on the material, cooling is carried out immediately after the deformation is finished, and the cooling rate is 20 ℃/min, so that the primary deformation material with the thickness of 30mm and 10mm and 100mm is obtained. The primary deformation material is divided into 3 sections along the length direction averagely, and is stacked together along the thickness direction and is put into a die, the hot heading step is repeated, and the secondary rolling deformation material with the thickness of 30mm and 10mm and 100mm is obtained, so that a finished product is obtained, and the maximum ZT value of the finished product reaches 1.33.
Claims (7)
1. A method for preparing a p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot heading is characterized by comprising the following specific steps:
step 1, bi, sb and Te are taken as raw materials according to stoichiometric ratio of Bi x Sb 2-x Te 3 Proportioning, wherein x is more than or equal to 0.3 and less than or equal to 0.52; vacuum packaging and smelting to obtain a crystal bar, carrying out zone smelting on the crystal bar obtained by smelting to obtain a zone-melting crystal bar, crushing the zone-melting crystal bar to prepare powder, and carrying out hot-pressing sintering on the powder to obtain a block, namely a sintered material, wherein the specific conditions of hot-pressing sintering are that the heating rate is 20-100 ℃/min, the sintering temperature is 410-490 ℃ and the sintering time is 5-20 min;
step 2, placing the sintered material prepared in the step 1 into a die cavity of a hot upsetting die, wherein the width of the die cavity is equal to that of the sintered material, and the length of the die cavity is 2-5 times that of the sintered material so as to ensure that the sintered material can be directionally deformed along the length direction during hot upsetting;
step 3, heating the die to enable the temperature of the sintered material to reach 400-510 ℃, immediately performing hot upsetting to enable the sintered material to deform directionally along the length direction until the die cavity is filled, keeping the temperature constant in the hot upsetting process, and immediately cooling after the hot upsetting is completed to obtain a primary hot upsetting material;
step 4, cutting the primary hot upsetting material obtained in the step 3 into 2-5 sections along the length direction, stacking the sections together along the thickness direction, and then placing the sections into a die cavity of the hot upsetting die in the step 2, wherein the width of the die cavity is equal to the width of the sintering material, and the length of the die cavity is 2-5 times of the length of the sintering material, so that the sintering material can be directionally deformed along the length direction during hot upsetting;
and 5, repeating the step 3 and the step 4 for 1-3 times, wherein in the process of generating strain at high temperature, high-density dislocation induces recrystallization, refines grains, and preferentially grows along the direction perpendicular to the pressure under the pressurizing condition at the same time, so that the p-type bismuth telluride-based thermoelectric material with fine grains and obvious orientation is finally obtained.
2. The method for preparing a p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot upsetting as recited in claim 1, wherein: in the step 1, the purity of Bi, sb and Te is more than 99.99 percent.
3. The method for preparing a p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot upsetting as recited in claim 1, wherein: the packaging in the step 1 refers to packaging by using a high borosilicate glass tube or a quartz glass tube.
4. The method for preparing a p-type bismuth telluride-based thermoelectric material using accumulated hot heading according to claim 3, wherein: when the high borosilicate glass tube is adopted for packaging, the smelting temperature is 590-650 ℃; when the quartz glass tube is used for packaging, the smelting temperature is 590-850 ℃.
5. The method for preparing a p-type bismuth telluride-based thermoelectric material using accumulated hot heading according to claim 3, wherein: the zone melting is carried out by a zone melting furnace in the step 1, and the specific zone melting condition when the high borosilicate glass tube is adopted for packaging is that the zone melting temperature is 650-780 ℃, the crystal pulling rate is 20-35 mm/h, and the diameter of a crystal rod is 30mm; the specific zone-melting condition when the quartz glass tube is adopted for packaging is that the zone-melting temperature is 650-850 ℃, the crystal pulling rate is 20-35 mm/h, and the diameter of the crystal rod is 30mm.
6. The method for preparing a p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot upsetting as recited in claim 1, wherein: the heating mode in the step 3 is induction heating, pulse direct current heating or kiln heating.
7. The method for preparing a p-type bismuth telluride-based thermoelectric material by utilizing accumulated hot upsetting as recited in claim 1, wherein: the length direction of the sintered material in the step 2 and the step 3 is perpendicular to the pressure direction of hot press sintering in the step 1.
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