CN115128099A - Wafer defect detection method, wafer defect detection equipment and shooting device thereof - Google Patents
Wafer defect detection method, wafer defect detection equipment and shooting device thereof Download PDFInfo
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- CN115128099A CN115128099A CN202211036534.0A CN202211036534A CN115128099A CN 115128099 A CN115128099 A CN 115128099A CN 202211036534 A CN202211036534 A CN 202211036534A CN 115128099 A CN115128099 A CN 115128099A
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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Abstract
The invention relates to a wafer defect detection method, wafer defect detection equipment and a shooting device thereof, wherein the shooting device of the wafer defect detection equipment comprises: a carrying part for carrying or holding a wafer; a first camera arranged on a first side of the carrying part; a second camera disposed on a second side of the carrier member opposite the first side; a first light source which is arranged on the first side of the carrying component and can be used as the same-side light source used when the first camera shoots the front side of the wafer; and the second light source is arranged on the second side of the carrying part. The second light source can be used as a same-side light source used by the second camera when the second camera shoots the back surface of the wafer, and can also be used as a different-side light source used by the first camera when the first camera shoots the wafer. The shooting device can improve the wafer defect identification efficiency of the wafer defect detection equipment, and compared with the prior art, the whole structure is simpler and more compact, and the manufacturing cost of the shooting device and even the wafer defect detection equipment can be effectively reduced.
Description
Technical Field
The present invention relates generally to the field of wafer defect detection. More particularly, the present invention relates to a photographing device of a wafer defect detecting apparatus, a wafer defect detecting method, and a wafer defect detecting apparatus including the photographing device and using the wafer defect detecting method.
Background
The wafer defect detection equipment can be used for detecting the defects of wafers such as Mini LED wafers or Micro LED wafers. The known wafer defect inspection apparatus includes a camera and a control module connected thereto. The shooting device comprises a first object stage, a first camera, a first light source and an opposite side light source (also called a backlight source). When the first objective table loads a wafer, the first camera can shoot the front side of the wafer under the illumination of the first light source to obtain a defect distribution pattern of the front side of the wafer, and can also shoot the wafer in a transmission mode under the illumination of the light source on the different side to obtain a defect distribution pattern of the outline of the crystal grains. The shooting device further comprises a second object stage, a second camera and a second light source. When the wafer is transferred from the first objective table and turned over to the second objective table, the second camera can photograph the back of the wafer under the illumination of the second light source, and a defect distribution pattern of the back of the wafer is obtained.
However, the inventors of the present invention found, after long-term investment and research: the known wafer defect detection equipment has the problems of low defect identification efficiency, complex structure, high manufacturing cost and the like of the shooting device.
Disclosure of Invention
In order to solve all or part of the problems, the invention provides a shooting device of a wafer defect detection device, a wafer defect detection method and a wafer defect detection device comprising the shooting device and capable of using the wafer defect detection method, which are used for solving the problems of low defect identification efficiency, complex shooting device structure, high manufacturing cost and the like of the known wafer defect detection device.
According to a first aspect of the present invention, there is provided a photographing device of a wafer defect detecting apparatus, comprising: a carrying part for carrying or holding a wafer; a first camera provided on a first side of the carrier member; a second camera provided on a second side of the carrier member opposite to the first side; the first light source is arranged on the first side of the carrying part and can be used as the same-side light source used when the first camera shoots the front side of the wafer; and the second light source is arranged on the second side of the carrying part. The second light source can be used as a same-side light source used by the second camera when shooting the back surface of the wafer, and can also be used as a different-side light source used by the first camera when shooting the wafer.
Optionally, the photographing device further includes a first lens disposed between the first camera and the object carrying component and connected to the first camera, and a second lens disposed between the second camera and the object carrying component and connected to the second camera.
Optionally, the combined structure of the first lens and the first light source is a telecentric lens with a built-in light source, and the combined structure of the second lens and the second light source is also a telecentric lens with a built-in light source.
Optionally, the first light source and the second light source are point light sources.
Optionally, the first camera, the first lens, the second camera and the second lens are arranged on a same axis perpendicular to the object carrying part.
Optionally, the first lens and the second lens have a magnification of 2 times or more, a numerical aperture of 0.1 or more, a resolution of 2500 ten thousand pixels or more, and a diagonal length of the target surface of 32.5mm or more.
Optionally, the wafer is a Mini LED wafer or a Micro LED wafer.
Optionally, the photographing device further includes a driving mechanism for driving the object carrying component to perform parallel movement between the first camera and the second camera, or for driving the first camera and the second camera to perform synchronous movement parallel to the object carrying component relative to the object carrying component.
Optionally, the drive mechanism is a robotic arm coupled to the carrier member.
Optionally, the object member is a horizontally disposed and transparent object table, the first side of the object member is one of an upper region of the object table and a lower region of the object table, and the second side of the object member is the other of the upper region of the object table and the lower region of the object table.
According to a second aspect of the present invention, there is provided a wafer defect detecting method applied to the photographing apparatus according to the first aspect of the present invention, comprising the steps of: the method comprises the steps of starting a first camera and shooting the front side of a wafer under the illumination of a first light source to obtain a wafer front side defect distribution pattern, starting a second camera and shooting the back side of the wafer under the illumination of a second light source to obtain a wafer back side defect distribution pattern, and starting the first camera and carrying out transmission shooting on the wafer under the illumination of the second light source to obtain a grain outline defect distribution pattern.
Optionally, when the first camera, the first lens, the second camera and the second lens are disposed on a same axis perpendicular to the object carrying component, the wafer defect detecting method further includes the following steps: horizontally overturning the defect distribution pattern on the back of the wafer by taking a vertical line passing through the center of the graph as an axis; and performing equal ratio fusion on the defect distribution pattern on the front surface of the wafer, the defect distribution pattern on the grain outline and the defect distribution pattern on the back surface of the wafer after overturning to obtain the defect distribution pattern of the wafer.
Optionally, the step of starting the first camera and shooting the front side of the wafer under the illumination of the first light source includes: the first light source is started first, and then the first camera is started, so that the first camera can shoot the front side of the wafer when the first light source is in a stable light-emitting state. The step of starting the second camera and shooting the back side of the wafer under the illumination of the second light source comprises the following steps: and starting the second light source and then starting the second camera so that the second camera can shoot the back of the wafer when the second light source is in a stable light-emitting state. The step of starting the first camera and taking a transmission photograph of the wafer under illumination by the second light source comprises: and starting the second light source and then starting the first camera so that the first camera can shoot the wafer in a transmission mode when the second light source is in a stable light-emitting state.
According to a third aspect of the present invention, there is provided a wafer defect detecting apparatus including the photographing device according to the first aspect of the present invention.
Optionally, the wafer defect detecting apparatus further includes a control component connected to the first camera, the second camera, the first light source and the second light source of the photographing device, and the control component is configured to implement the wafer defect detecting method according to the second aspect of the present invention.
Optionally, the wafer defect detecting apparatus further includes a display screen connected to the control component, and the display screen is configured to display the wafer front defect distribution pattern, the grain outline defect distribution pattern, and the wafer back defect distribution pattern, or the wafer defect distribution pattern generated based on the wafer front defect distribution pattern, the grain outline defect distribution pattern, and the wafer back defect distribution pattern.
In the technical solutions described in the first, second and third aspects of the present invention, the first camera and the first light source are disposed on the first side of the object carrying component, and the second camera and the second light source are disposed on the second side of the object carrying component, so that it is possible to perform front-side shooting, back-side shooting and transmission shooting on the wafer on the object carrying component, and it is not necessary to transfer and flip the wafer from one object stage (belonging to the object carrying component) to another object stage as in the prior art when performing these shots, so the shooting device can acquire the front-side defect distribution pattern, the back-side defect distribution pattern and the die outline defect distribution pattern of the wafer faster than the known technology, and it is ensured that the wafer defect detecting device can recognize the defect of the wafer faster. In addition, the shooting device can save a carrying part, and can also save a special different side light source by taking the second light source used by the second camera as the different side light source (namely a backlight source) of the first camera during the transmission shooting, so that the whole structure of the shooting device is simpler and more compact compared with the prior art, and the manufacturing cost of the shooting device and the wafer defect detection equipment can be effectively reduced.
Drawings
The above and other objects, features and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar or corresponding parts and in which:
FIG. 1 is a schematic structural diagram of a conventional wafer;
FIG. 2 shows a camera device applied in the wafer defect inspection apparatus according to an embodiment of the present invention;
fig. 3 is a schematic process diagram of the wafer defect inspection apparatus according to the embodiment of the present invention when performing image fusion.
Detailed Description
The technical solutions in the embodiments of the present disclosure will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present disclosure, and it is to be understood that the described embodiments are only some embodiments, but not all embodiments, of the present disclosure. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
The embodiment of the invention provides a wafer defect detection device which is mainly used for detecting defects of a wafer 6, in particular to defects of pattern wafers such as a Mini LED wafer or a Micro LED wafer, but the wafer defect detection device is not limited to defect detection of the pattern wafers, and can also be used for front defect detection and/or back defect detection of non-pattern wafers.
As shown in fig. 1, the wafer 6 mainly includes a substrate and dies 6a formed on the substrate and arranged in an array, as shown in fig. 1. The substrate can be a layer structure or a multilayer structure, each layer structure is made of transparent materials such as sapphire or SiC silicon carbide, and the crystal grain 6a is generally made of semiconductor materials such as GaAs and/or GaN through methods such as epitaxial growth and etching technology, and belongs to a core structure of a chip or an LED. Defects of wafer 6 typically include: contaminants adsorbed on the front or back side of the wafer 6; scratches formed on the front or back surface of the wafer 6; and incomplete grain structure.
Although the known wafer defect inspection apparatus can perform wafer front defect inspection and wafer back defect inspection, the wafer defect inspection apparatus has problems of low defect recognition efficiency, complex structure of the imaging device, high manufacturing cost, and the like. The embodiment of the invention mainly relates to the improvement of a shooting device and a defect detection method of circular defect crystal detection equipment, on one hand, parts (such as a backlight and an objective table) required by the shooting device are reduced, on the other hand, the defect detection method is simplified, the wafer defect identification efficiency of the circular defect crystal detection equipment is higher, and the whole structure is simpler and more compact compared with the prior art, so that the manufacturing cost of the shooting device and the wafer defect detection equipment can be effectively reduced.
As shown in fig. 2, the wafer defect inspection apparatus mainly includes a camera and a control module connected to the camera. The control component can control the shooting device. The control assembly generally includes a processor (e.g., a PLC or CPU), a memory, and electronics coupled to the processor, etc., as is well known to those skilled in the art and will not be described in detail herein. It should be noted that the number of the processors, the memories, and the necessary electronic components is not limited, and all of them can be adjusted according to actual needs, for example, when the control assembly needs to be disassembled into a plurality of control modules, the plurality of control modules respectively execute different tasks of the control assembly, and communicate and cooperate to complete one or more tasks if necessary.
The camera device comprises a carrier part 5 for loading or holding a wafer 6. In this embodiment, the stage member 5 is a horizontally disposed and transparent stage so that the wafer 6 can be directly placed on the stage. The stage may be selected from transparent hard materials such as glass and transparent resin, and is preferably a plate structure that is easy to manufacture and low in cost. In other embodiments, the carrier member 5 may alternatively be a clamping mechanism for holding the vertically arranged wafer 6, for example, the clamping mechanism may comprise two arcuate jaws and a linear motor connected to one arcuate jaw for driving the arcuate jaw toward or away from the other arcuate jaw, and in use, the vertically arranged wafer 6 is placed between the two arcuate jaws, and the linear motor is activated to move the one arcuate jaw toward the other arcuate jaw until the two clamp the wafer 6.
The camera may also include a display screen coupled to the control assembly. The display screen is used for displaying the processing result of the control assembly and/or the shooting result of the shooting device, for example, displaying a wafer front defect distribution pattern, a grain outline defect distribution pattern and a wafer back defect distribution pattern, and further for example, displaying a wafer defect distribution pattern generated based on the wafer front defect distribution pattern, the grain outline defect distribution pattern and the wafer back defect distribution pattern.
The camera device further comprises a first camera 11 arranged at a first side of the object-carrying part 5 and a first light source 21 arranged at the first side of the object-carrying part 5, and a second camera 12 arranged at a second side of the object-carrying part 5 and a second light source 22 arranged at the second side of the object-carrying part 5. The first light source 21 can be used as an on-side light source (also called as an on-axis light source) used by the first camera 11 for photographing the front side of the wafer, and the second light source 22 can be used as an on-side light source used by the second camera 12 for photographing the back side of the wafer and as an off-side light source (also called as a backlight source) used by the first camera 11 for photographing the wafer. It should be noted that when the carrier member 5 is a horizontally disposed and transparent carrier, the first side of the carrier member 5 may be selected as one of the upper region of the carrier and the lower region of the carrier, and the second side of the carrier member may be selected as the other of the upper region of the carrier and the lower region of the carrier. When the carrier part 5 is selected as a clamping mechanism capable of clamping a vertically arranged wafer 6, the first side of the carrier member 5 may be selected as one of the left side region of the clamping mechanism and the right side region of the stage, and the second side of the carrier member may be selected as the other of the left side region of the clamping mechanism and the right side region of the stage.
The control assembly is connected to the first camera 11, the second camera 12, the first light source 21 and the second light source 22 of the photographing apparatus. The control component can start the first camera 11 and shoot the front side of the wafer 6 under the illumination of the first light source 21, and obtain a defect distribution pattern on the front side of the wafer. The control unit can then activate the second camera 12 and photograph the back side of the wafer 6 under the illumination of the second light source 22, and obtain a wafer back side defect distribution pattern. The control unit is further capable of activating the first camera 11 and performing transmission photography of the wafer 6 under the illumination of the second light source 22, and obtaining a grain profile defect distribution pattern. If desired, the control unit is also capable of activating the second camera 12 and taking a transmission photograph of the wafer 6 under illumination from the first light source 21 and obtaining a grain profile defect distribution pattern from different angles.
That is, the first camera 11 and the first light source 21 are disposed on the first side of the object loading part 5, and the second camera 12 and the second light source 22 are disposed on the second side of the object loading part 5, so that it can take front-side photography, back-side photography and transmission photography of the wafer 6 on the object loading part 5, and it is not necessary to transfer and flip the wafer from one object loading stage to another object loading stage as in the prior art, so that the photographing device can acquire the wafer front-side defect distribution pattern, the wafer back-side defect distribution pattern and the die outline defect distribution pattern more quickly than the known art, and it is ensured that the wafer defect detecting apparatus can more quickly identify the defect of the wafer 6. In addition, the imaging device can save one carrying part 5, and can also use the second light source 22 used by the second camera 12 as an opposite side light source (namely, a backlight) when the first camera 11 carries out transmission shooting so as to save one opposite side light source, so that the whole structure of the imaging device is simpler and more compact compared with the prior art, thereby effectively reducing the manufacturing cost of the imaging device and the wafer defect detection equipment.
The photographing device may further include a first lens 31 provided between the first camera 11 and the loading part 5 and connected to the first camera 11, and a second lens 32 provided between the second camera 12 and the loading part 5 and connected to the second camera 12. The first lens 31 and the second lens 32 can improve the shooting quality of the first camera 11 and the second camera 12, respectively, and ensure that the wafer front defects, the wafer back defects and the die outline defects are more clearly shown in the shooting result.
Because the grain size of the Mini LED wafer is generally 100-200 μm, and the size of the conventional LED is generally larger than 1000 μm, the appearance defect automatic detection system of the conventional LED can not be used. Through a lot of experiments, in order to accurately detect the defects of the Mini LED wafer, the first lens 31 and the second lens 32 are preferably selected to be lenses with a Numerical Aperture (NA) of 0.1 or more and a rate of 2 times or more. Meanwhile, the first camera 11 and the second camera 12 are selected to have a resolution of 2500 ten thousand pixels or more and a length of a diagonal line of the target surface of 32.5mm or more. Under the condition of selecting the parameters, the shooting device ensures that the front defects, the back defects and the grain outline defects of the Mini LED wafer can be clearly shown in the shooting result. It is easy to understand that, because the grain size of the Micro LED wafer is smaller, the magnification of the lens, the numerical aperture, and the camera pixels and the target surface should be selected as more optimal parameters when performing defect detection of the Micro LED wafer.
Preferably, the combined structure of the first lens 31 and the first light source 21 is selected as a telecentric lens with a built-in light source, and the combined structure of the second lens 32 and the second light source 22 is also selected as a telecentric lens with a built-in light source. Because the telecentric lens adopts the parallel light path design, the telecentric lens has the characteristic of ultra-low distortion, the shooting quality of the first camera 11 and the second camera 12 can be improved, and the final identification result of the control assembly is ensured to be more accurate. In addition, the built-in light source of the telecentric lens is also very suitable for being used as a light source at different sides, and the first camera 11 and the second camera 12 can be effectively ensured to accurately acquire the distribution pattern of each grain outline defect, so that the accuracy of the control assembly in identifying the grain outline defects is improved. The first light source 21 and the second light source 22 may be point light sources or surface light sources, but preferably are point light sources suitable for use with a telecentric lens. The point light source can be selected from a fluorescent lamp or an LED lamp with mature technology and low cost.
The camera may further include a drive mechanism. The drive mechanism may be selected to be a robotic arm or a servo drive mechanism similar to that used in 3d printers and capable of providing at least X-axis motion and Y-axis motion. The drive mechanism may be fixedly connected to the carrier part 5 or to the first camera 11 and the second camera 12. When the driving mechanism is fixedly connected with the object carrying component 5, the driving mechanism is used for driving the object carrying component 5 to move in parallel between the first camera 11 and the second camera 12, so that the first camera 11 and the second camera 12 can shoot wafers 6 with different sizes and can also shoot different positions of the wafers 6 in an enlarged mode. When the driving mechanism is fixedly connected with the first camera 11 and the second camera 12, the driving mechanism is used for driving the first camera 11 and the second camera 12 to make synchronous motion parallel to the carrying part 5 relative to the carrying part 5, so as to ensure that the first camera 11 and the second camera 12 can shoot wafers 6 with different sizes or carry out magnifying shooting on different positions of the wafers 6. However, since the robot arm has a higher degree of flexibility and can avoid the shooting paths of the first camera 11 and the second camera 12 more easily, the driving mechanism is preferably a robot arm connected to the loading part 5 to drive the loading part 5 to perform parallel movement between the first camera 11 and the second camera 12 by using the robot arm.
Next, a wafer defect inspection method is described, which is implemented by a control module to control a wafer defect inspection apparatus to perform defect inspection on a wafer 6. The wafer defect detection method comprises the following steps: starting the first camera 11 and shooting the front side of the wafer 6 under the illumination of the first light source 21 to obtain a defect distribution pattern of the front side of the wafer, starting the second camera 12 and shooting the back side of the wafer 6 under the illumination of the second light source 22 to obtain a defect distribution pattern of the back side of the wafer, starting the first camera 11 and shooting the wafer 6 under the illumination of the second light source 22 in a transmission mode to obtain a defect distribution pattern of the outline of the crystal grain. In the process of implementing the wafer defect detection method, the shooting device of the wafer defect detection device does not need to transfer and turn the wafer from one objective table to another objective table as in the prior art when various shooting is carried out, so the wafer defect detection method can ensure that the shooting device can acquire the defect distribution pattern on the front surface of the wafer, the defect distribution pattern on the back surface of the wafer and the defect distribution pattern on the outline of crystal grains more quickly than the prior art, and can improve the detection efficiency of the wafer defect detection equipment on the defects of the wafer 6. In addition, under the control of the wafer defect detecting method, the wafer defect detecting apparatus can use the second light source 22 used by the second camera 12 as an opposite-side light source when the first camera 11 performs transmission shooting, so as to save an opposite-side light source, so that the wafer defect detecting method can also ensure that the overall structure of the shooting apparatus can be more simplified and compact than the known technology, which is beneficial to reducing the manufacturing cost of the shooting apparatus and even the wafer defect detecting equipment.
As shown in fig. 3, the wafer defect detecting method further includes the following steps: horizontally overturning the defect distribution pattern 201 on the back of the wafer by taking a vertical line passing through the center of the graph as an axis; and (3) performing equal ratio fusion on the wafer front defect distribution pattern 203, the grain outline defect distribution pattern 204 and the reversed wafer back defect distribution pattern 202 to obtain a wafer overall defect distribution pattern 205. In this way, the front defects 203a of the wafer front defect distribution pattern 203, the back defects 201a of the wafer back defect distribution pattern 201, and the outline defects 204a of the die outline defect distribution pattern 204 can be collectively displayed in the wafer global defect distribution pattern 205, so as to ensure that the user can more intuitively understand the global defects of the wafer 6.
In this embodiment, since the first camera 11, the first lens 31, the second camera 12 and the second lens 32 are disposed on the same axis perpendicular to the object-carrying component 5, the central points of the shooting results of the first camera 11 and the second camera 12 correspond to the same position of the wafer 6, in this case, the defect distribution pattern on the back side of the wafer is horizontally flipped by using the vertical line passing through the center of the figure as an axis, and the flipped axis can directly perform equal ratio fusion on the defect distribution pattern on the back side of the wafer, the defect distribution pattern on the front side of the wafer and the defect distribution pattern on the outline of the crystal grain, so as to obtain the defect distribution pattern on the whole wafer. However, in the prior art, since the first camera 11, the first lens 31, the second camera 12 and the second lens 32 are not arranged on the same axis perpendicular to the object-carrying component 5, so that the center points of the capturing results of the first camera 11 and the second camera 12 correspond to different positions of the wafer 6, the capturing results of the first camera 11 and the second camera 12 need to be calibrated to ensure that the center points of the capturing results of the first camera 11 and the second camera 12 correspond to the same position of the wafer 6, and then the wafer back defect distribution pattern can be horizontally flipped by using the vertical line passing through the center of the figure as an axis, and the flipped axis can directly perform equal ratio fusion on the wafer back defect distribution pattern and the wafer front defect distribution pattern and the grain outline defect distribution pattern, so as to obtain an accurate wafer overall defect distribution pattern. That is to say, in the process of obtaining the defect distribution pattern of the entire wafer, the wafer defect detecting method of the embodiment does not need to perform calibration of two photographing results and then perform image flipping and image fusion as in the known technology, but directly perform image flipping and image fusion, so the wafer defect detecting method has the advantages of being simpler and quicker when implemented.
In this embodiment, the geometric fusion means that before the fusion, it is ensured that the amplification scales of the respective drawings are consistent, and then the drawings are fused, so as to obtain an accurate wafer overall defect distribution pattern. In detail, if the magnification of the first camera 11 and the second camera 12 is the same with respect to the wafer real object during the photographing, the defect distribution pattern on the front surface of the wafer, the defect distribution pattern on the outline of the crystal grain, and the defect distribution pattern on the back surface of the wafer after the turning can be directly fused, and an accurate defect distribution pattern on the whole wafer can be obtained. However, if the magnifications of the first camera 11 and the second camera 12 are different from each other with respect to the wafer real object during the photographing, the magnifications of the defect distribution pattern on the front side of the wafer, the defect distribution pattern on the grain outline, and the defect distribution pattern on the back side of the wafer after the turning are required to be adjusted to be consistent, and then the magnification is fused, so that the accurate defect distribution pattern on the whole wafer can be obtained.
In this embodiment, the step of starting the first camera and shooting the front surface of the wafer under the illumination of the first light source includes: the first light source is started first, and then the first camera is started, so that the first camera can shoot the front side of the wafer when the first light source is in a stable light-emitting state. The step of starting the second camera and shooting the back of the wafer under the illumination of the second light source comprises the following steps: and starting the second light source and then starting the second camera so that the second camera can shoot the back of the wafer when the second light source is in a stable light-emitting state. The steps of starting the first camera and carrying out transmission shooting on the wafer under the illumination of the second light source comprise: the second light source is started first, and then the first camera is started, so that the first camera can shoot the wafer in a transmission mode when the second light source is in a stable light-emitting state. Because various light sources have certain brightness fluctuation when starting to emit light, the mode that the starting time of the camera is later than the starting time of the first light source can ensure that each camera shoots the wafer when the light sources are in a stable light emitting state, so that the shooting quality of the camera can be effectively improved, and clearer defect distribution patterns on the front side of the wafer, the defect distribution patterns on the outline of the crystal grains and the defect distribution patterns on the back side of the wafer can be conveniently obtained.
In the above description of the present specification, the terms "fixed," "mounted," "connected," or "connected," and the like, are to be construed broadly unless otherwise expressly specified or limited. For example, with the term "coupled", it can be fixedly coupled, detachably coupled, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship. Therefore, unless the specification explicitly defines otherwise, those skilled in the art can understand the specific meaning of the above terms in the present invention according to specific situations.
In light of the foregoing description of the present specification, those skilled in the art will also understand that terms used to indicate orientation or positional relationship, such as "upper", "lower", "vertical", "horizontal", etc., are based on the orientation or positional relationship shown in the drawings of the present specification, which are used for the purpose of convenience in explaining aspects of the present invention and simplifying the description, and do not explicitly indicate or imply that the devices or elements involved must have the specific orientation, be constructed and operated in the specific orientation, and thus the above-mentioned orientation or positional relationship terms should not be interpreted or construed as limiting the aspects of the present invention.
In addition, the terms "first" or "second", etc. used in this specification are used to refer to numbers or ordinal terms for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present specification, "a plurality" means at least two, for example, two, three or more, and the like, unless specifically defined otherwise.
While various embodiments of the present invention have been shown and described herein, it will be obvious to those skilled in the art that such embodiments are provided by way of example only. Numerous modifications, changes, and substitutions will occur to those skilled in the art without departing from the spirit and scope of the present invention. It should be understood that various alternatives to the embodiments of the invention described herein may be employed in practicing the invention. It is intended that the following claims define the scope of the invention and that the module compositions, equivalents, or alternatives falling within the scope of these claims be covered thereby.
Claims (16)
1. The utility model provides a shooting device of wafer defect check out test set which characterized in that includes:
a carrying part for carrying or holding a wafer;
a first camera provided on a first side of the carrier member;
a second camera provided on a second side of the carrier member opposite to the first side;
a first light source provided on a first side of the carrier member and capable of being used as a same-side light source for the first camera to photograph the front surface of the wafer; and
a second light source disposed on a second side of the carrier member;
the second light source can be used as a same-side light source used by the second camera for shooting the back of the wafer and can also be used as a different-side light source used by the first camera for shooting the wafer.
2. The camera of claim 1, further comprising a first lens disposed between the first camera and the object carrying component and coupled to the first camera, and a second lens disposed between the second camera and the object carrying component and coupled to the second camera.
3. The camera of claim 2, wherein the combined structure of the first lens and the first light source is a telecentric lens with a built-in light source, and wherein the combined structure of the second lens and the second light source is also a telecentric lens with a built-in light source.
4. The camera of claim 2, wherein the first and second light sources are point light sources.
5. The camera of claim 2, wherein the first camera, the first lens, the second camera and the second lens are disposed on a same axis perpendicular to the object carrying member.
6. The imaging apparatus according to claim 2, wherein the first lens and the second lens have a magnification of 2 times or more, a numerical aperture of 0.1 or more, a resolution of 2500 ten thousand pixels or more of the first camera and the second camera, and a diagonal length of the target surface of 32.5mm or more.
7. The camera of any one of claims 1 to 5, wherein the wafer is a Mini LED wafer or a Micro LED wafer.
8. The camera of any one of claims 1 to 5, further comprising a drive mechanism for driving the carrier part for parallel movement between the first and second cameras or for driving the first and second cameras for synchronous movement relative to the carrier part parallel to the carrier part.
9. The camera of claim 8, wherein said drive mechanism is a robotic arm coupled to said carrier member.
10. The imaging apparatus according to any one of claims 1 to 5, wherein the stage member is a horizontally disposed and transparent stage, the first side of the stage member is one of an upper region of the stage and a lower region of the stage, and the second side of the stage member is the other of the upper region of the stage and the lower region of the stage.
11. A wafer defect detection method applied to the imaging apparatus according to any one of claims 1 to 10, comprising the steps of:
starting the first camera and shooting the front side of the wafer under the illumination of the first light source to obtain a defect distribution pattern on the front side of the wafer;
starting the second camera and shooting the back of the wafer under the illumination of the second light source to obtain a wafer back defect distribution pattern;
and starting the first camera and carrying out transmission shooting on the wafer under the illumination of the second light source so as to obtain a grain outline defect distribution pattern.
12. The wafer defect detecting method according to claim 11, wherein when the first camera, the first lens, the second camera and the second lens are disposed on a same axis perpendicular to the object carrying part, the wafer defect detecting method further comprises the steps of:
horizontally overturning the defect distribution pattern on the back of the wafer by taking a vertical line passing through the center of the graph as an axis;
and performing equal ratio fusion on the defect distribution pattern on the front surface of the wafer, the defect distribution pattern on the grain outline and the defect distribution pattern on the back surface of the wafer after overturning to obtain the defect distribution pattern of the wafer.
13. The wafer defect detection method of claim 11, wherein:
the step of starting the first camera and shooting the front side of the wafer under the illumination of the first light source comprises the following steps: starting the first light source and then starting the first camera so that the first camera can shoot the front side of the wafer when the first light source is in a stable light-emitting state;
the step of starting the second camera and shooting the back side of the wafer under the illumination of the second light source comprises the following steps: starting the second light source and then starting the second camera so that the second camera can shoot the back of the wafer when the second light source is in a stable light-emitting state;
the step of starting the first camera and taking a transmission photograph of the wafer under illumination by the second light source comprises: and starting the second light source and then starting the first camera so that the first camera can shoot the wafer in a transmission mode when the second light source is in a stable light-emitting state.
14. A wafer defect detecting apparatus characterized by comprising the photographing device according to any one of claims 1 to 10.
15. The wafer defect detecting apparatus according to claim 14, further comprising a control module connected to the first camera, the second camera, the first light source and the second light source of the camera, wherein the control module is configured to implement the wafer defect detecting method according to any one of claims 11 to 13.
16. The wafer defect detecting apparatus according to claim 15, further comprising a display screen connected to the control component, wherein the display screen is configured to display the wafer front defect distribution pattern, the die outline defect distribution pattern, and the wafer back defect distribution pattern, or the wafer defect distribution pattern generated based on the wafer front defect distribution pattern, the die outline defect distribution pattern, and the wafer back defect distribution pattern.
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