CN115117183B - 异质结电池的加工方法 - Google Patents
异质结电池的加工方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
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CN202210731242.2A CN115117183B (zh) | 2022-06-24 | 2022-06-24 | 异质结电池的加工方法 |
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Citations (14)
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US5858824A (en) * | 1996-06-14 | 1999-01-12 | Nec Corporation | Method of forming fine electrode on semiconductor substrate |
CN102403371A (zh) * | 2010-09-10 | 2012-04-04 | 赛昂电力有限公司 | 具有电镀的金属格栅的太阳能电池 |
CN102623551A (zh) * | 2012-03-21 | 2012-08-01 | 常州亿晶光电科技有限公司 | 减少太阳能硅片腐蚀厚度的制造工艺 |
CN103107212A (zh) * | 2013-02-01 | 2013-05-15 | 中国科学院上海微系统与信息技术研究所 | 具有电镀电极的异质结太阳电池及制备方法 |
CN104362216A (zh) * | 2014-10-23 | 2015-02-18 | 云南大学 | 一种晶体硅太阳能电池前栅线电极的制备方法 |
CN107978553A (zh) * | 2016-10-21 | 2018-05-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
CN109148647A (zh) * | 2018-09-07 | 2019-01-04 | 江苏顺风光电科技有限公司 | 一种TOPCon结构电池的制备方法 |
CN109728087A (zh) * | 2019-01-08 | 2019-05-07 | 西安电子科技大学 | 基于纳米球掩模的低欧姆接触GaN基高电子迁移率晶体管制备方法 |
CN112242457A (zh) * | 2019-07-16 | 2021-01-19 | 单伶宝 | 一种用于双面异质结光伏电池的ito膜的图形化方法 |
CN113066897A (zh) * | 2021-03-18 | 2021-07-02 | 西南石油大学 | 一种异质结太阳电池铜电极的无掩膜制备方法 |
CN113140644A (zh) * | 2020-07-14 | 2021-07-20 | 单伶宝 | 一种单面或双面太阳能电池图形化掩膜和太阳能电池的制备方法 |
CN113643966A (zh) * | 2021-08-09 | 2021-11-12 | 长鑫存储技术有限公司 | 掩膜结构及其制备方法及半导体结构的制备方法 |
CN113972302A (zh) * | 2021-10-26 | 2022-01-25 | 通威太阳能(眉山)有限公司 | TOPCon电池及其制备方法和电器设备 |
CN114068732A (zh) * | 2020-08-05 | 2022-02-18 | 晶电科技(苏州)有限公司 | 一种太阳能电池电极及其制备方法 |
-
2022
- 2022-06-24 CN CN202210731242.2A patent/CN115117183B/zh active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US5858824A (en) * | 1996-06-14 | 1999-01-12 | Nec Corporation | Method of forming fine electrode on semiconductor substrate |
CN102403371A (zh) * | 2010-09-10 | 2012-04-04 | 赛昂电力有限公司 | 具有电镀的金属格栅的太阳能电池 |
CN102623551A (zh) * | 2012-03-21 | 2012-08-01 | 常州亿晶光电科技有限公司 | 减少太阳能硅片腐蚀厚度的制造工艺 |
CN103107212A (zh) * | 2013-02-01 | 2013-05-15 | 中国科学院上海微系统与信息技术研究所 | 具有电镀电极的异质结太阳电池及制备方法 |
CN104362216A (zh) * | 2014-10-23 | 2015-02-18 | 云南大学 | 一种晶体硅太阳能电池前栅线电极的制备方法 |
CN107978553A (zh) * | 2016-10-21 | 2018-05-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
CN109148647A (zh) * | 2018-09-07 | 2019-01-04 | 江苏顺风光电科技有限公司 | 一种TOPCon结构电池的制备方法 |
CN109728087A (zh) * | 2019-01-08 | 2019-05-07 | 西安电子科技大学 | 基于纳米球掩模的低欧姆接触GaN基高电子迁移率晶体管制备方法 |
CN112242457A (zh) * | 2019-07-16 | 2021-01-19 | 单伶宝 | 一种用于双面异质结光伏电池的ito膜的图形化方法 |
CN113140644A (zh) * | 2020-07-14 | 2021-07-20 | 单伶宝 | 一种单面或双面太阳能电池图形化掩膜和太阳能电池的制备方法 |
CN114068732A (zh) * | 2020-08-05 | 2022-02-18 | 晶电科技(苏州)有限公司 | 一种太阳能电池电极及其制备方法 |
CN113066897A (zh) * | 2021-03-18 | 2021-07-02 | 西南石油大学 | 一种异质结太阳电池铜电极的无掩膜制备方法 |
CN113643966A (zh) * | 2021-08-09 | 2021-11-12 | 长鑫存储技术有限公司 | 掩膜结构及其制备方法及半导体结构的制备方法 |
CN113972302A (zh) * | 2021-10-26 | 2022-01-25 | 通威太阳能(眉山)有限公司 | TOPCon电池及其制备方法和电器设备 |
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