CN117352585A - 一种防止光伏电池边缘短路的电极制作方法及通过该方法形成的光伏电池 - Google Patents

一种防止光伏电池边缘短路的电极制作方法及通过该方法形成的光伏电池 Download PDF

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CN117352585A
CN117352585A CN202311325628.4A CN202311325628A CN117352585A CN 117352585 A CN117352585 A CN 117352585A CN 202311325628 A CN202311325628 A CN 202311325628A CN 117352585 A CN117352585 A CN 117352585A
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photovoltaic cell
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姚宇
李中天
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Suzhou Taiyangjing New Energy Co ltd
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Abstract

本发明提供了一种防止光伏电池边缘短路的电极制作方法，包括以下步骤：将掩膜材料沉积到光伏器件的侧边和至少一个表面；对位于所述表面的掩膜材料进行图形化处理，形成所述掩膜材料的局部开口；对所述侧边的掩膜材料进行处理使其抗蚀和抗电镀；在所述器件表面的所述掩膜材料的开口中电化学沉积金属电极；去除所述器件表面和侧边的掩膜材料；其中，对所述侧边的掩膜材料进行处理方式包括用光或热处理使掩膜材料发生聚合或交联反应。

Description

一种防止光伏电池边缘短路的电极制作方法及通过该方法形 成的光伏电池
本申请是向中国知识产权局提交的申请日为2021年3月2日、申请号为202110229573.1、发明名称为“一种防止光伏电池边缘短路的电极制作方法及通过该方法形成的光伏电池”的申请的分案申请。
技术领域
本发明涉及太阳能电池及半导体制造领域，具体涉及一种防止光伏电池边缘短路的电极制作方法及通过该方法形成的光伏电池。
背景技术
随着晶硅太阳能电池的结构向高开压的方向演化，各环节中的低温工艺得到了越来越多的应用。以硅基异质结电池为例，基底上低温沉积的材料有本征非晶硅层、掺杂非晶硅层、透明导电氧化物层如氧化铟锡。通常非晶硅层的沉积方式为等离子体增强化学气相沉积(PECVD)，透明导电氧化物层的沉积方式为物理气相沉积如磁控溅射或反应等离子体沉积。在物质从气相向固相转变的沉积中，硅片的厚度方向即侧边也不可避免会发生材料沉积。由于具有双面电极的太阳能电池的受光面和背光面为电池的两个极性，因此在侧边或某一面的边缘形成绝缘区来防止两个极性的局部互联短路就至关重要。
当使用丝网印刷的方式在硅片表面沉积金属时，由于丝网的图形可以限制金属仅接触表面，因此大大降低了边缘短路的风险。但是由于丝网印刷的栅线的高度和宽度局限性，以及对银浆的高度依赖，更高效的太阳能电池正在向用电镀铜为主要导电材料的方向演进。
当含有铜离子的溶液接触太阳能电池的导电表面时，在电镀过程中该表面则会沉积铜金属，因此在硅片的边缘通常采用后刻蚀的方法对沉积的金属进行去除，从而减少边缘短路现象的发生。这一方法需要增加表面保护层增加制造成本，而且刻蚀往往对太阳能电池的表面金属层也有损伤，从而影响电池的效率和良率。
发明内容
要解决的技术问题：本发明的目的是提供一种防止光伏电池边缘短路的电极制作方法及通过该方法形成的光伏电池，减少制造成本，以及刻蚀对太阳能电池的表面金属层的损伤，提高电池的效率和良率。
技术方案：一种防止光伏电池边缘短路的电极制作方法，包括以下步骤：
将掩膜材料沉积到光伏器件的侧边和至少一个表面；
对位于所述表面的掩膜材料进行图形化处理，形成所述掩膜材料的局部开口；
对所述侧边的掩膜材料进行处理使其抗蚀和抗电镀；
在所述器件表面的所述掩膜材料的开口中电化学沉积金属电极；
去除所述器件表面和侧边的掩膜材料。
优选的，所述掩膜材料的沉积方法包括丝网印刷、滚涂、刷涂、狭缝涂布、幕帘涂布、喷涂、旋涂、浸涂或喷墨打印中的任意一种或两种及两种以上的组合。
优选的，所述掩膜材料的在侧边和表面的沉积方式包括一次性沉积或分别沉积。
优选的，所述光伏器件的表面和侧边均为导电材料，所述导电材料为掺杂多晶硅、掺杂非晶硅、掺杂碳化硅、透明导电氧化物、金属种子层中的一种或两种以上导电材料的混合材料或两种及两种以上导电材料的层叠。
优选的，所述掩膜材料的图形化处理方式包括以下方法：
其一为使用紫外光局部曝光掩膜材料，使其曝光区域发生聚合或交联或分解反应，并用显影液使所述光伏器件表面在开口处显露；
其二为使用激光直写局部曝光掩膜材料，使其曝光区域发生聚合或交联或分解反应，并用显影液使所述光伏器件表面在开口处显露；
其三为局部沉积与掩膜材料发生反应的物质，使未沉积所述物质的区域在热处理或化学处理后发生聚合或交联或分解反应，并用显影液使所述光伏器件表面在开口处显露；
其四为通过喷墨打印掩膜材料的方式，在不需要开口沉积金属的表面区域打印掩膜材料。优选的，所述紫外光或激光的波长范围为300-450nm，优选的为350-420nm，更优选的为365-405nm。
优选的，所述对所述侧边的掩膜材料进行处理方式包括用光或热处理使掩膜材料发生聚合或交联反应。
优选的，所述电化学沉积金属包括电镀沉积和化学沉积，所述金属包括镍、铜、锡、银、铋、铟中的任意一种或两张或两种以上相叠，或两种以上金属的合金。
优选的，所述方法还包括在去除所述器件表面和侧边的掩膜材料后，再进一步去除所述器件表面和侧边的导电种子层。
上述的制作方法形成的光伏电池。
有益效果：本发明具有以下优点：
1.本发明涉及的太阳能电极的制作中，以往电极的侧边不做处理或材料包裹不到位或局部固化不到位，会导致正常制程中原本应当在表面电化学沉积的金属也沉积到在侧边的导电层上，从而形成电池片向光面(通常为正极或负极)与背光面(通常为负极或正极)在侧边完全或局部短路，影响电池片的效率，尤其是弱光条件下的发电能力，一般的侧边处理方法是先不保护侧边，做完图形金属化以后，在电池片的表面对图形进行保护，之后将侧边的金属刻蚀掉，从而去除短路的风险点。本发明中将一定粘度的掩膜材料搭配使用恰当的工艺，一次沉积在电池的表面及侧边，无需额外的侧边涂膜设备和工艺，与后道的图形化以及去掩膜是完全匹配的，因此不需要对侧边材料进行额外的特殊处理。掩膜材料用量可显著低于图形金属化后先保护后刻蚀的方法，降低材料、工艺和设备成本；
2.本发明中优选的工艺次序是：涂膜表面及侧边-图形化处理表面(在同一设备中处理侧边)-显影-金属沉积-去掩膜(表面及侧边)。
附图说明
图1为实施例1中光伏器件表面电极的制作工艺方法及器件剖面图；
图2为实施例2中光伏器件表面电极的制作工艺方法及器件剖面图；
图3为实施例3中光伏器件表面电极的制作工艺方法及器件剖面图；
图4为实施例4中光伏器件表面电极的制作工艺方法及器件剖面图。
具体实施方式
下面结合附图对本发明作进一步描述，以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围，图中的各层厚度与实际无关。
实施例1
一种防止光伏电池边缘短路的电极制作方法，包括以下步骤：
将掩膜材料通过丝网印刷、滚涂、刷涂、狭缝涂布、幕帘涂布、喷涂、旋涂或喷墨打印的方式沉积到光伏器件的侧边和至少一个表面；
对位于所述表面的掩膜材料，使用激光直写局部曝光掩膜材料，使其曝光区域发生分解反应，对所述侧边的掩膜材料进行热处理使掩膜材料发生聚合或交联反应，使其抗蚀和抗电镀；用显影液使所述光伏器件表面在开口处显露，形成所述掩膜材料的局部开口；
在所述器件表面的所述掩膜材料的开口中电镀沉积金属(镍、铜、锡、银、铋、铟中的任意一种或两张或两种以上相叠，或两种以上金属的合金)电极；
一步去除所述器件表面和侧边的掩膜材料。
一种光伏电池，由上述一种制作方法制备得到。
实施例2
一种防止光伏电池边缘短路的电极制作方法，包括以下步骤：
将掩膜材料通过丝网印刷、滚涂、刷涂、狭缝涂布、幕帘涂布、喷涂、旋涂或喷墨打印的方式沉积到光伏器件的侧边和至少一个表面；
对位于所述表面的掩膜材料，通过局部沉积(例如喷墨打印)与掩膜材料发生反应的物质，使未沉积所述物质的区域在热处理后发生聚合或交联反应，
对所述侧边的掩膜材料进行热处理使掩膜材料发生聚合或交联反应，使其抗蚀和抗电镀；用显影液使所述光伏器件表面在开口处显露，形成所述掩膜材料的局部开口；
在所述器件表面的所述掩膜材料的开口中化学沉积金属(镍、铜、锡、银、铋、铟中的任意一种或两张或两种以上相叠，或两种以上金属的合金)电极；
一步去除所述器件表面和侧边的掩膜材料。
一种光伏电池，由上述一种制作方法制备得到。
实施例3
一种防止光伏电池边缘短路的电极制作方法，包括以下步骤：
将掩膜材料通过丝网印刷、滚涂、刷涂、狭缝涂布、幕帘涂布、喷涂、旋涂或喷墨打印的方式沉积到光伏器件的侧边和至少一个表面；
对位于所述表面的掩膜材料，使用紫外光局部曝光掩膜材料，使其曝光区域发生聚合或交联反应；
对所述侧边的掩膜材料进行光处理使掩膜材料发生聚合或交联反应，使其抗蚀和抗电镀；用显影液使所述光伏器件表面在开口处显露，形成所述掩膜材料的局部开口；
在所述器件表面的所述掩膜材料的开口中电镀沉积金属(镍、铜、锡、银、铋、铟中的任意一种或两张或两种以上相叠，或两种以上金属的合金)电极；
一步去除所述器件表面和侧边的掩膜材料。
一种光伏电池，由上述一种制作方法制备得到。
实施例4
一种防止光伏电池边缘短路的电极制作方法，包括以下步骤：
将掩膜材料通过喷墨打印的方式沉积到光伏器件的侧边和至少一个表面；
对位于所述表面的掩膜材料，通过喷墨打印掩膜材料的方式，在不需要开口沉积金属的区域打印掩膜材料，形成局部开口的掩膜材料；
在所述器件表面的所述掩膜材料的开口中电镀沉积金属(镍、铜、锡、银、铋、铟中的任意一种或两张或两种以上相叠，或两种以上金属的合金)电极；
去除所述器件表面和侧边的掩膜材料。
一种光伏电池，由上述一种制作方法制备得到。
实施例5
一种防止光伏电池边缘短路的电极制作方法，包括以下步骤：
将掩膜材料通过丝网印刷、滚涂、刷涂、狭缝涂布、幕帘涂布、喷涂、旋涂或喷墨打印的方式沉积到光伏器件的侧边和至少一个表面；
对位于所述表面的掩膜材料，使用激光直写局部曝光掩膜材料，使其曝光区域发生聚合或交联反应；
对所述侧边的掩膜材料进行光或热处理使掩膜材料发生聚合或交联反应，使其抗蚀和抗电镀；用显影液使所述光伏器件表面在开口处显露，形成所述掩膜材料的局部开口；
在所述器件表面的所述掩膜材料的开口中电镀沉积金属(镍、铜、锡、银、铋、铟中的任意一种或两张或两种以上相叠，或两种以上金属的合金)电极；
去除所述器件表面和侧边的掩膜材料；
去除所述器件表面和侧边的导电种子层。
一种光伏电池，由上述一种制作方法制备得到。
以上所述仅是本发明的优选实施方式，应当指出：对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

1.一种防止光伏电池边缘短路的电极制作方法，其特征在于，包括以下步骤：
将掩膜材料沉积到光伏器件的侧边和至少一个表面；
对位于所述表面的掩膜材料进行图形化处理，形成所述掩膜材料的局部开口；
对所述侧边的掩膜材料进行处理使其抗蚀和抗电镀；
在所述器件表面的所述掩膜材料的开口中电化学沉积金属电极；
去除所述器件表面和侧边的掩膜材料；
其中，对所述侧边的掩膜材料进行处理方式包括用光或热处理使掩膜材料发生聚合或交联反应。
2.根据权利要求1所述防止光伏电池边缘短路的电极制作方法，其特征在于：所述掩膜材料的沉积方法包括丝网印刷、滚涂、刷涂、狭缝涂布、幕帘涂布、喷涂、旋涂、浸涂或喷墨打印中的任意一种或两种及两种以上的组合。
3.根据权利要求1所述防止光伏电池边缘短路的电极制作方法，其特征在于：所述掩膜材料在侧边和表面的沉积方式包括一次性沉积或分别沉积。
4.根据权利要求3所述防止光伏电池边缘短路的电极制作方法，其特征在于：所述掩膜材料在侧边和表面的沉积方式为分别沉积，所述掩膜材料在表面的沉积方式包括丝网印刷、滚涂或刷涂中的任意一种，所述掩膜材料在侧边的沉积方式包括狭缝涂布、幕帘涂布、喷涂、旋涂或浸涂中的任意一种。
5.根据权利要求1所述防止光伏电池边缘短路的电极制作方法，其特征在于，所述掩膜材料的图形化处理方式包括以下方法：
其一为使用紫外光局部曝光掩膜材料，使其曝光区域发生聚合或交联或分解反应，并用显影液使所述光伏器件表面在开口处显露；
其二为使用激光直写局部曝光掩膜材料，使其曝光区域发生聚合或交联或分解反应，并用显影液使所述光伏器件表面在开口处显露；
其三为局部沉积与掩膜材料发生反应的物质，使未沉积所述物质的区域在热处理或化学处理后发生聚合或交联或分解反应，并用显影液使所述光伏器件表面在开口处显露；
其四为通过喷墨打印掩膜材料的方式，在不需要开口沉积金属的表面区域打印掩膜材料。
6.根据权利要求5所述防止光伏电池边缘短路的电极制作方法，其特征在于：所述紫外光或激光的波长范围为300-450nm。
7.根据权利要求1所述防止光伏电池边缘短路的电极制作方法，其特征在于：将一定粘度的掩膜材料一次沉积在光伏器件的表面及侧边；
对位于所述表面的掩膜材料进行图形化处理，形成所述掩膜材料的局部开口；其中，所述掩膜材料的图形化处理方式包括以下方法：其一为使用紫外光局部曝光掩膜材料，使其曝光区域发生聚合或交联或分解反应，并用显影液使所述光伏器件表面在开口处显露；其二为使用激光直写局部曝光掩膜材料，使其曝光区域发生聚合或交联或分解反应，并用显影液使所述光伏器件表面在开口处显露；
其中，对所述侧边的掩膜材料进行处理方式包括用光处理使掩膜材料发生聚合或交联反应；所述图形化处理和对所述侧边的掩膜材料进行处理，在同一设备中进行。
8.根据权利要求1所述防止光伏电池边缘短路的电极制作方法，其特征在于：所述光伏器件的表面和侧边均为导电材料，所述导电材料为掺杂多晶硅、掺杂非晶硅、掺杂碳化硅、透明导电氧化物、金属种子层中的一种或两种以上导电材料的混合材料或两种及两种以上导电材料的层叠；所述电化学沉积金属包括电镀沉积和化学沉积，所述金属包括镍、铜、锡、银、铋、铟中的任意一种或两张或两种以上相叠，或两种以上金属的合金。
9.根据权利要求1所述防止光伏电池边缘短路的电极制作方法，其特征在于：所述方法还包括在去除所述器件表面和侧边的掩膜材料后，再进一步去除所述器件表面和侧边的导电种子层。
10.一种光伏电池，其特征在于，采用权利要求1-9中任一项所述的制作方法形成电极。
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