CN115116925A - Preparation method of Micro-LED repairing support plate and Micro-LED repairing method of display device - Google Patents

Preparation method of Micro-LED repairing support plate and Micro-LED repairing method of display device Download PDF

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CN115116925A
CN115116925A CN202210753805.8A CN202210753805A CN115116925A CN 115116925 A CN115116925 A CN 115116925A CN 202210753805 A CN202210753805 A CN 202210753805A CN 115116925 A CN115116925 A CN 115116925A
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micro
led
repairing
carrier plate
led chips
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陈书志
李佳育
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Shanghai Wingtech Information Technology Co Ltd
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Shanghai Wingtech Information Technology Co Ltd
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Priority to CN202210753805.8A priority Critical patent/CN115116925A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The application discloses a preparation method of a Micro-LED repairing support plate and a Micro-LED repairing method of a display device, wherein the preparation method of the Micro-LED repairing support plate comprises the following steps: providing a Micro-LED wafer and a temporary carrier plate, and attaching the Micro-LED wafer to the temporary carrier plate, wherein the Micro-LED wafer comprises a substrate and a plurality of Micro-LED chips attached to the substrate; separating the substrate from the Micro-LED chips of the Micro-LED wafer so that the Micro-LED chips are attached to the temporary carrier plate; and providing a target carrier plate, and transferring at least part of the Micro-LED chips on the temporary carrier plate to the target carrier plate to obtain a repairing carrier plate with the Micro-LED chip arrangement density being less than or equal to the preset arrangement density. By adopting the scheme, the Micro-LED chip repairing device can repair a plurality of defective Micro-LED chips at one time, and is high in repairing efficiency. Meanwhile, the defect Micro-LED chip can be repaired on the basis of not pulling out the defect Micro-LED chip, so that the repairing difficulty is reduced, and the repairing reliability is improved.

Description

Preparation method of Micro-LED repairing support plate and Micro-LED repairing method of display device
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a preparation method of a Micro-LED repairing support plate and a Micro-LED repairing method of a display device.
Background
The Micro Light Emitting Diode (Micro-LED) has self-luminous display characteristics, is an all-solid-state LED, has the characteristics of long service life, high brightness, low power consumption, small volume, ultrahigh resolution and the like, and can be applied to extreme environments such as high temperature or radiation and the like. Compared with the OLED technology which is self-luminous, the Micro-LED has the advantages of high efficiency, long service life, relatively stable material, no environmental influence and no ghost phenomenon.
At present, in a display device, defect detection is often required to be carried out on Micro-LED chips on a backboard of the display device, and when the defects are detected, the Micro-LED chips with the defects are required to be repaired. The current repairing mode can only repair a Micro-LED chip with one defect at a time, and the repairing efficiency is very low.
Disclosure of Invention
The embodiment of the application discloses a preparation method of a Micro-LED repairing support plate and a Micro-LED repairing method of a display device, which can repair Micro-LED chips with multiple defects at one time and effectively improve repairing efficiency.
In order to achieve the above object, in a first aspect, an embodiment of the present application discloses a method for preparing a Micro-LED repair carrier plate, where the Micro-LED repair carrier plate is applied to a display device, the display device includes a backplane and Micro-LED chips arranged on the backplane in a preset arrangement density array, and the repair carrier plate is used to repair defective Micro-LED chips on the backplane, and the method includes:
providing a Micro-LED wafer and a temporary carrier plate, and attaching the Micro-LED wafer to the temporary carrier plate, wherein the Micro-LED wafer comprises a substrate and a plurality of Micro-LED chips attached to the substrate;
separating the substrate from the Micro-LED chip so as to enable the Micro-LED chip to be attached to the temporary carrier plate;
and providing a target carrier plate, and transferring at least part of the Micro-LED chips on the temporary carrier plate to the target carrier plate to obtain a repairing carrier plate with the Micro-LED chip arrangement density being less than or equal to the preset arrangement density.
As an optional embodiment, after the separating the substrate from the Micro-LED chips to attach the Micro-LED chips on the temporary carrier board, and before the providing a target carrier board, transferring at least some Micro-LED chips on the temporary carrier board to the target carrier board to obtain a repair carrier board with the arrangement density of the Micro-LED chips being less than or equal to the preset arrangement density, the method further includes:
covering a light shield corresponding to at least part of the Micro-LED chip on one side of the temporary carrier plate, which is far away from the Micro-LED chip;
and removing part of the material of the temporary carrier plate which is not covered with the light shield so as to expose the Micro-LED chips which are not covered on the temporary carrier plate.
As an optional embodiment, the providing a target carrier board, and transferring at least some Micro-LED chips on the temporary carrier board to the target carrier board to obtain a repair carrier board with an arrangement density of the Micro-LED chips less than or equal to the preset arrangement density includes:
providing a target carrier plate, and placing the target carrier plate on one side of the temporary carrier plate, which is far away from the photomask;
and irradiating the exposed Micro-LED chips on the temporary carrier plate by using a laser emitter so as to separate the irradiated Micro-LED chips from the temporary substrate and transfer the irradiated Micro-LED chips to the target carrier plate, thereby obtaining the repair carrier plate with the arrangement density of the Micro-LED chips being less than or equal to the preset arrangement density.
As an optional implementation manner, a glue layer is disposed on the target carrier, and the Micro-LED chip is bonded to the target carrier through the glue layer when being transferred onto the target carrier.
As an optional implementation manner, when the Micro-LED chip is attached to the temporary carrier plate, an end of the Micro-LED chip provided with the electrode is attached to the temporary carrier plate.
In a second aspect, the present application also discloses a method for repairing a Micro-LED of a display device, the method comprising:
providing a back plate, wherein the back plate comprises a pixel point area and a blank area, the pixel point area is used for arranging Micro-LED chips which are arranged in an array with preset arrangement density, and the blank area at least comprises a first position to be repaired;
detecting the defect condition of the Micro-LED chip on the back plate to obtain the position of a first defective LED chip and the first position to be repaired corresponding to the first defective LED chip;
providing a first repairing carrier plate with Micro-LED chips, and determining the Micro-LED chips corresponding to the first defective LED chips on the first repairing carrier plate as first repairing chips, wherein the arrangement density of the Micro-LED chips on the first repairing carrier plate is the same as the preset arrangement density, and the first repairing carrier plate is prepared by the preparation method of the Micro-LED repairing carrier plate according to the first aspect;
adjusting the position of the first repairing carrier plate relative to the backboard so that a first repairing chip on the first repairing carrier plate is aligned with the first position to be repaired;
and transferring the first repairing chip to the first position to be repaired.
As an optional implementation manner, the first position to be repaired is located at one side of the first defective LED chip.
As an alternative to the above-described embodiment,
the blank area also comprises a second position to be repaired;
after the transferring the first repair chip to the first site to be repaired, the method further comprises:
detecting the defect condition of the Micro-LED chip on the back plate again to obtain the position of a second defective LED chip and a second position to be repaired corresponding to the second defective LED chip, wherein the second position to be repaired is positioned on one side of the second defective LED chip;
providing a second repairing support plate with Micro-LED chips, and determining the Micro-LED chips corresponding to the second defective LED chips on the second repairing support plate as second repairing chips; wherein the arrangement density of the Micro-LED chips on the second repair carrier is less than the preset arrangement density, and the second repair carrier is prepared by the method of the first aspect;
adjusting the position of the second repairing carrier plate relative to the back plate so that the second repairing chip on the second repairing carrier plate is aligned to the second position to be repaired;
and transferring the second repairing chip to the second position to be repaired.
As an alternative to the above-described embodiment,
in the Micro-LED chips on the pixel point area, every three Micro-LED chips form a chip combination, and the chips are combined into rows and/or are arranged on the back plate in rows;
the two adjacent rows or two adjacent columns of chip combinations are arranged at intervals, and the blank area is formed at the interval between the two adjacent rows or two adjacent columns of chip combinations;
wherein, every three Micro-LED chips respectively comprise a red Micro-LED chip, a green Micro-LED chip and a blue Micro-LED chip.
As an optional implementation manner, the blank area includes a plurality of blank location units, and each blank location unit corresponds to each Micro-LED chip of the pixel area.
Compared with the prior art, the beneficial effect of this application lies in:
in the preparation method of the Micro-LED repairing carrier plate and the Micro-LED repairing method of the display device disclosed in the embodiment of the application, the repairing carrier plate with the Micro-LED chip arrangement density smaller than or equal to the preset arrangement density on the back plate of the display device is obtained by transferring at least part of Micro-LED chips on the temporary carrier plate to the target carrier plate. Therefore, the prepared repairing carrier plate can be used for repairing the Micro-LED chips with the defects on the back plate, the repairing LED chips used for repairing on the repairing carrier plate are transferred to the positions to be repaired of the corresponding defective Micro-LED chips on the back plate, and the repairing of the defective Micro-LED chips is realized on the basis that the defective Micro-LED chips are not pulled out, so that the repairing difficulty is reduced, and the repairing reliability is improved. Meanwhile, a large number of Micro-LED chips are distributed on the repairing support plate, so that the Micro-LED chips with a plurality of defects can be repaired at one time, and the repairing efficiency is high.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method for preparing a Micro-LED repair carrier disclosed in the present application;
FIG. 2 is a schematic process diagram of a method for manufacturing a Micro-LED repair carrier disclosed in the present application;
FIG. 3 is a flow chart of a method for repairing Micro-LEDs of a display device as disclosed herein;
FIG. 4 is a schematic view of a back plate as disclosed herein;
FIG. 5 is a schematic diagram of a process for performing a primary repair of Micro-LEDs of a display device disclosed herein;
FIG. 6 is another flow chart of a method for repairing Micro-LEDs of a display device as disclosed herein;
fig. 7 is a schematic diagram illustrating a second repair process performed on the display device disclosed in fig. 6.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the present application, the terms "upper", "lower", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as appropriate.
Furthermore, the terms "mounted," "disposed," "provided," and "connected" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as the case may be.
Furthermore, the terms "first," "second," and the like are used primarily to distinguish one device, element, or component from another (the specific type and configuration of the device may be the same or different), and are not used to indicate or imply the relative importance or number of the indicated devices, elements, or components. "plurality" means two or more unless otherwise specified.
The Micro Light Emitting Diode (Micro-LED) has self-luminous display characteristics, is an all-solid-state LED, has the characteristics of long service life, high brightness, low power consumption, small volume, ultrahigh resolution and the like, and can be applied to extreme environments such as high temperature or radiation and the like. Compared with the OLED technology which is self-luminous, the Micro-LED has the advantages of high efficiency, long service life, relatively stable material, no environmental influence and no ghost phenomenon.
At present, in a display device, defect detection is often required to be carried out on Micro-LED chips on a backboard of the display device, and when the defects are detected, the Micro-LED chips with the defects are required to be repaired.
When repairing the Micro-LED chip with the defect, a mode of repairing one Micro-LED chip at a time is adopted, and the repairing mode is as follows: the method comprises the steps of removing a defective Micro-LED chip on the back plate in a laser irradiation mode, determining the removal position, then adhering the intact Micro-LED chip to the removal position on the back plate from the Micro-LED chip, and finally pressing or bonding the intact Micro-LED chip on the back plate for conduction.
However, the inventor finds that when the Micro-LED chip is unplugged, the unplugging difficulty is high, and the circuit on the backplane is easily damaged. Meanwhile, when the number of the defective Micro-LED chips on the back plate is large, multiple processes are needed because single pulling-out, single bonding, pressing or bonding processes are needed for each repairing, and the repairing efficiency is very low.
Based on the method, the repairing carrier plate can be used for repairing Micro-LED chips arranged on a back plate on the display device at a preset arrangement density, when the repairing carrier plate is used for repairing, the Micro-LED chips with defects do not need to be pulled out, so that the damage to circuits on the back plate during pulling out is avoided, meanwhile, a plurality of or even a large number of Micro-LED chips with defects can be repaired through one-time repairing, and the repairing efficiency is high.
The specific implementation process of the method for manufacturing a Micro-LED repairing carrier board and the method for repairing a Micro-LED of a display device according to the embodiments of the present application will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1 to fig. 2, a first aspect of the present application discloses a method for manufacturing a Micro-LED repairing carrier. The Micro-LED repairing carrier plate obtained by the preparation method can be applied to a display device, and the display device comprises a back plate and Micro-LED chips arranged on the back plate in a preset arrangement density array. The preset arrangement density is determined according to the arrangement density of the Micro-LED chips on the back plate, for example, the arrangement density of the Micro-LED chips on the back plate is 100%, that is, the preset arrangement density is 100%, or the arrangement density of the Micro-LED chips on the back plate is 80%, and at this time, if the Micro-LED chips are not arranged in some positions on the back plate, the preset arrangement density may be 80%.
Considering that the Micro-LED chips are arranged on the back plate, when the back plate is manufactured or used, the Micro-LED chips may malfunction to affect the display effect of the display device, for example, some of the Micro-LED chips in the plurality of Micro-LED chips on the back plate may be defective Micro-LED chips, and at this time, the defective Micro-LED chips on the back plate need to be repaired to ensure the display effect of the display device.
The prepared Micro-LED repairing support plate is used for repairing the defective Micro-LED chip on the back plate.
Specifically, the preparation method of the Micro-LED repairing carrier plate comprises the following steps:
101. providing a Micro-LED wafer and a temporary carrier plate, and attaching the Micro-LED wafer to the temporary carrier plate.
As shown in fig. 2 (a), the Micro-LED wafer 11 optionally includes a substrate 11a and a plurality of Micro-LED chips 11b attached to the substrate 11 a. The Micro-LED chip 11b is attached to the substrate 11a mainly by laser paste when attached to the substrate 11 a. Illustratively, the substrate 11a may include, but is not limited to, a sapphire substrate, a glass substrate, and the like.
In the step 101, when the Micro-LED chip 11 is attached to the temporary carrier 14, the temporary carrier 14 may be provided with a laser adhesive layer 14a, so that during attachment, one end of the Micro-LED chip 11b with an electrode is attached to the temporary carrier 14 through the laser adhesive layer 14a, thereby implementing attachment of the Micro-LED chip 11b and the temporary carrier 14. In this way, the Micro-LED chip 11 can be attached to the temporary carrier plate 14 for subsequent removal of the substrate 11 a.
103. And separating the substrate from the Micro-LED chips of the Micro-LED wafer so as to enable the Micro-LED chips to be attached to the temporary carrier plate.
The Micro-LED chips 11b on the Micro-LED wafer 11 can be transferred onto the temporary carrier 14, thereby realizing mass transfer. It can be understood that when the Micro-LED chips 11b on the Micro-LED wafer 11 are attached to the temporary carrier 14, the arrangement density of the Micro-LED chips 11b attached to the temporary carrier 14 may be the same as or different from the preset arrangement density of the Micro-LED chips on the back plate. When the arrangement density of the Micro-LED chips 11b attached to the temporary carrier plate 14 is different from the preset arrangement density of the Micro-LED chips on the back plate, the arrangement density of the Micro-LED chips attached to the temporary carrier plate 14 is greater than the preset arrangement density of the Micro-LED chips on the back plate, so that more Micro-LED chips can be selected for transfer according to actual needs when the Micro-LED chips on the temporary carrier plate 14 are transferred subsequently.
As shown in (b) of fig. 2, optionally, in the step 103, as can be seen from the foregoing, the Micro-LED chips 11b on the Micro-LED wafer 11 are bonded to the substrate 11a by the laser glue, so that the substrate 11a and the Micro-LED chips 11b can be separated by, for example, laser dissociation, i.e., by laser irradiation.
104. And covering a light shield on one side of the temporary carrier plate, which is far away from the Micro-LED chips, corresponding to part of the Micro-LED chips, and removing part of the material of the temporary carrier plate, which is not covered with the light shield, so as to expose the Micro-LED chips which are not covered on the temporary carrier plate.
As shown in fig. 2 (c), a part of the Micro-LED chips 11b on the temporary carrier 14 is covered by the mask 15, and then a part of the material of the temporary carrier 14 not covered by the mask 15 is removed by, for example, etching, so that the Micro-LED chips 11b not covered by the mask 15 can be exposed as required, thereby facilitating the subsequent processes to transfer the exposed Micro-LED chips 11 b.
105. And providing a target carrier plate, and transferring at least part of the Micro-LED chips on the temporary carrier plate to the target carrier plate to obtain the repairing carrier plate with the Micro-ELD chip arrangement density being less than or equal to the preset arrangement density.
As shown in (d) of fig. 2, according to the condition of the defective Micro-LED chips on the backplane, a corresponding number of Micro-LED chips 11b are transferred from the temporary carrier 14 onto the target carrier 16, so as to obtain a repaired carrier 1 having a distribution density of the Micro-LED chips 11b less than or equal to a preset distribution density according to actual needs, and then the defective Micro-LED chips on the backplane are repaired by using the Micro-LED chips 11b on the repaired carrier 1.
Optionally, the step 105 may specifically include the following steps:
1051. and providing a target carrier plate, and placing the target carrier plate on one side of the temporary carrier plate, which is deviated from the photomask.
As shown in fig. 2 (c), (d), optionally, in actual operation, the target carrier 16 may be placed under the temporary carrier 14, so that the target carrier 16 may be aligned with the temporary carrier 14.
It will be appreciated that the target carrier plate 16 may or may not have the same dimensions as the temporary carrier plate 14.
Optionally, a glue layer 17 is provided on the target carrier 16, and the glue layer 17 can be used for bonding the Micro-LED chips transferred onto the target carrier 16. Illustratively, the glue layer 17 may include, but is not limited to, laser glue, silicon glue, or other light-sensitive glue.
1052. And irradiating the exposed Micro-LED chips on the temporary carrier plate by using a laser emitter so as to separate the irradiated Micro-LED chips from the temporary substrate and transfer the irradiated Micro-LED chips to a target carrier plate, thereby obtaining the repair carrier plate with the arrangement density of the Micro-LED chips being less than or equal to the preset arrangement density.
The Micro-LED chip 11b on the temporary carrier plate 14 is irradiated by the laser emitter, so that the laser glue on the temporary carrier plate 14 can be decomposed, the Micro-LED chip can be conveniently, quickly and harmlessly separated from the temporary carrier plate 14 as far as possible, and the probability of damage to the Micro-LED chip possibly caused when the Micro-LED chip on the temporary carrier plate 14 is transferred is reduced.
It should be understood that, the above-mentioned obtaining of the repair carrier board 1 with the Micro-LED chip arrangement density being less than or equal to the preset arrangement density means: the arrangement density of the Micro-LED chips on the repairing carrier plate 1 is in a certain proportion to the preset arrangement density of the Micro-LED chips on the back plate. For example, assuming that the preset arrangement density of the arrangement of the Micro-LED chips on the back plate is 100%, the arrangement density of the Micro-LED chips 11b on the repair carrier plate 1 may be 100%, 50%, 25%, 12.5%, etc. The purpose of such setting is to match the situation of the defective Micro-LED chip on the back plate when the defective Micro-LED chip on the back plate is repaired by the repairing carrier plate 1 subsequently, and perform one or more times of mass repairing.
Alternatively, as shown in fig. 2 (d), the adhesive layer 17 may include a main body portion 17a and a plurality of spaced apart protruding portions 17b, the main body portion 17a is used for adhering to the target carrier board 16, the protruding portions 17b are provided on the main body portion 17a, and the protruding portions 17b are used for adhering to the corresponding Micro-LED chips 11 b. Specifically, the number of the protruding portions 17b is adapted to the number of the Micro-LED chips 11b adhered on the target carrier board 16, that is, each Micro-LED chip 11b is adhered on each corresponding protruding portion 17 b. The protruding height of the protruding portion 17b protruding the main body portion 17a can be less than or equal to 100um, so that the protruding portion 17b has sufficient adhesive ability and can avoid increasing the overall thickness of the repair carrier plate 1.
It is understood that the above-mentioned convex portion 17b is formed mainly due to: when the Micro-LED chips 11b on the temporary carrier 14 are separated by laser irradiation, the temporary carrier 14 and the Micro-LED chips are bonded and fixed by laser glue, so that after separation, part of the laser glue remains on the Micro-LED chips 11b, and when the separated Micro-LED chips 11b are transferred to the target carrier 16, the separated Micro-LED chips need to be cleaned to remove the remaining laser glue thereon. The removing method can also be, for example, laser irradiation or chemical etching, so that, during the removing, not only the residual laser glue on the Micro-LED chip is removed, but also a part of the laser glue on the target carrier 16 is removed, and the protrusion 17b is formed.
According to the preparation method of the Micro-LED repairing carrier plate 1 disclosed by the first aspect of the application, the Micro-LED chips on the Micro-LED wafer 11 are transferred onto the temporary carrier plate 14, and then the Micro-LED chips on the temporary carrier plate 14 are transferred onto the target carrier plate 16 according to the preset arrangement density of the Micro-LED chips on the back plate of the display device to be repaired, so that the repairing carrier plate 1 with the arrangement density of the Micro-LED chips smaller than or equal to the preset arrangement density is formed, and the repairing of the defective Micro-LED chips on the back plate can be realized through the Micro-LED chips on the repairing carrier plate 1.
How to repair the defective Micro-LED chip on the backplane by using the repair carrier 1 will be described in detail with reference to the drawings.
Referring to fig. 3 to 5, a second aspect of the present application discloses a method for repairing a Micro-LED of a display device, the method using the repairing carrier of the first aspect for repairing. Specifically, the method comprises the following steps:
301. a backing plate is provided.
As shown in fig. 4, in some embodiments, the back plate 31 is a back plate of a display device, and a circuit (not shown) may be disposed on the back plate 31, and the circuit may be formed together when the back plate 31 is manufactured, so that when the Micro-LED chips are arranged on the back plate 31, the Micro-LED chips can be conducted through the circuit, and thus the Micro-LED chips are conducted to emit light.
Optionally, considering that the Micro-LED chips are generally arranged on the surface of the back plate 31, based on this, the surface of the back plate 31 may include pixel point regions 31a and blank regions 31b, where the pixel point regions 31a are used for arranging the Micro-LED chips 311 arranged in the array with the preset arrangement density, and the blank regions 31b are reserved for repairing the positions, arranged on the Micro-LED chips 11b on the carrier plate 1, of the Micro-LED chips 311 having defects on the pixel point regions 31 a.
In this regard, regarding the surface of the back plate 31, considering that the blank area 31b is provided for the subsequent repair of the Micro-LED chips 11b on the carrier board, the blank area 31b is also provided with a circuit, which is a reserved circuit for conducting the Micro-LED chips 11b for repair.
In some embodiments, considering that the Micro-LED chips 311 of the display device generally include blue Micro-LED chips, green Micro-LED chips, and red Micro-LED chips, for the Micro-LED chips 311 on the pixel point region 31a, every third Micro-LED chip forms a chip assembly, and the chip assembly is arranged on the back plate 31 in rows and/or columns. The two adjacent rows or two columns of chip assemblies are spaced apart from each other, and the space between the two adjacent rows or two columns of chip assemblies forms the blank area 31b, in other words, the blank area 31b is located between the two adjacent rows or two columns of chip assemblies. As can be seen, for the surface of the back plate 31, when the Micro-LED chips 311 on the pixel area 31a are arranged in rows and/or columns, there are a plurality of blank areas 31b, and each blank area 31b is respectively located between two adjacent rows or two adjacent columns of chip combinations. Thus, when repairing the Micro-LED chip 311 having a defect in the pixel point area 31a by using the blank area 31b, the repaired Micro-LED chip 11b is directly disposed on the blank area 31b and conducted with the circuit in the blank area 31b without removing the defective Micro-LED chip 311 in the pixel point area 31a, and the repairing method is simple, convenient and reliable.
Further, each chip combination comprises a red Micro-LED chip, a green Micro-LED chip and a blue Micro-LED chip. Correspondingly, the blank area 31b includes a plurality of blank position units 312, and each blank position unit 312 corresponds to each Micro-LED chip of the pixel area 31 a. As can be seen, for the blank area 31b, in order to facilitate repairing the defective Micro-LED chip on the pixel point area 31a on the blank area 31b, each blank position unit 312 on the blank area 31b corresponds to each Micro-LED chip, so that when the Micro-LED chip corresponding to the blank position unit 312 is defective, the normal Micro-LED chip can be transferred to the blank position unit 312 corresponding to the defective Micro-LED chip, thereby repairing the defective Micro-LED chip.
302. And detecting the defect condition of the Micro-LED chip on the back plate to obtain the position of the first defect LED chip and a first position to be repaired corresponding to the first defect LED chip.
It is understood that the first defective LED chip 311a refers to a Micro-LED chip with a defect in the pixel point region 31a of the back plate 31, and the first position to be repaired 312a corresponding to the first defective LED chip 311a is a blank region 31b corresponding to the blank position unit 312 of the defective Micro-LED chip, and it can be seen that the first position to be repaired 312a can be located at one side of the first defective LED chip, so that the normal Micro-LED chip on the repair carrier plate 1 can be transferred to the first position to be repaired 312a, i.e., one side of the first defective LED chip, during the repair, thereby achieving the repair.
It is noted that the first defective LED chip 311a may be one or more, and the first defective LED chip 311a may include at least one of a green Micro-LED chip, a red Micro-LED chip, or a blue Micro-LED chip.
303. Providing a first repairing carrier plate with Micro-LED chips, and determining the Micro-LED chips corresponding to the first defective LED chips on the first repairing carrier plate as first repairing chips.
Optionally, the first repairing carrier plate 1a may be prepared by the method for preparing the Micro-LED repairing carrier plate 1 mentioned in the foregoing first aspect, and considering that the first defective LED chip 311a on the back plate 31 is repaired for the first time, the arrangement density of the Micro-LED chips on the first repairing carrier plate 1a may be the same as the arrangement density of the Micro-LED chips on the back plate 31, that is, the same as the preset arrangement density. Thus, the arrangement condition of the Micro-LED chips on the first repairing carrier plate 1a is the same as the arrangement condition of the Micro-LED chips on the back plate 31, so that the first repairing carrier plate 1a can directly correspond to the back plate 31, and the Micro-LED chips on the first repairing carrier plate 1a are aligned with the Micro-LED chips on the back plate 31.
304. And adjusting the position of the first repairing carrier plate relative to the back plate so as to make the first repairing chip on the first repairing carrier plate align to the first position to be repaired, and transferring the first repairing chip to the first position to be repaired.
In this way, the position of the first repair chip 111 can be made to correspond to the first position to be repaired 312a, thereby facilitating the transfer of the first repair chip 111 to the first position to be repaired 312 a.
It is understood that there may be a plurality of the first repairing chips 111, and there may also be a plurality of the first to-be-repaired positions 312 a.
As shown in fig. 5, for example, the Micro-LED chips with defects in the pixel point region 31a on the back plate 31 are blue Micro-LED chips, that is, the first defective LED chip 311a is a blue Micro-LED chip, and the first defective LED chip 311a is two (as shown in (a) of fig. 5, and the first defective LED chip 311a is marked with "NG" in (a) of fig. 5), then the first repair chip 111 on the first repair carrier plate 1a should also be a blue Micro-LED chip, and the position of the first repair carrier plate 1a may be the same as the position of the first defective LED chip 311a on the back plate 31.
During the repair, since the blank area 31b is reserved on the back plate 31, that is, the first position to be repaired 312a is reserved, the first repair carrier plate 1a is moved to the first repair chip 111 to align with the first position to be repaired 312a, then the first repair chip 111 is separated from the first repair carrier plate 1a by, for example, laser irradiation, and then the separated first repair chip 111 is transferred to the first position to be repaired 312a by the transfer structure, and finally the first repair chip 111 is firmly adhered to the first position to be repaired 312a by, for example, pressing or bonding, and at the same time the first repair chip 111 is electrically connected to the circuit on the first position to be repaired 312a, so as to complete the repair of the first defective LED chip 311a (as shown in (b) of fig. 5, the first position to be repaired 312a is located below the first defective LED chip 311a identified by NG in (b) of fig. 5, at which point the first repair chip 111 has been bonded).
Referring to fig. 6 and 7, fig. 6 is a flowchart illustrating a second repair of the display device of fig. 5 after the first repair, and fig. 7 is a schematic diagram illustrating a second repair of the display device of fig. 6. That is, when the display device is repaired twice, the repair is performed after the first repair of the display device has been performed. The repairing method of the Micro-LED of the display device comprises the following steps:
601. a backing plate is provided.
602. And detecting the defect condition of the Micro-LED chip on the back plate to obtain the position of the first defect LED chip and a first position to be repaired corresponding to the first defect LED chip.
603. Providing a first repairing carrier plate with Micro-LED chips, and determining the Micro-LED chips corresponding to the first defective LED chips on the first repairing carrier plate as first repairing chips.
604. And adjusting the position of the first repairing carrier plate relative to the back plate so as to make the first repairing chip on the first repairing carrier plate align to the first position to be repaired, and transferring the first repairing chip to the first position to be repaired.
It is understood that the specific processes and descriptions of step 601 to step 604 may refer to step 301 to step 304, which are not described herein again.
605. And detecting the defect condition of the Micro-LED chip on the back plate again to obtain the position of a second defect LED chip and a second position to be repaired corresponding to the second defect LED chip.
As shown in fig. 7, the second location to be repaired 312b is also located in the blank area 31b, i.e., the second location to be repaired 312b is the above-mentioned blank location unit 312, and the second location to be repaired 312b is different from the first location to be repaired 312 a.
Optionally, the Micro-LED chip with the defect in the pixel point region 31a on the back plate 31 is defined as a second defective LED chip 311b, and the second position to be repaired 312b should also be located at one side of the second defective LED chip 311 b.
606. And providing a second repairing carrier plate with the Micro-LED chips, and determining the Micro-LED chips corresponding to the second defective LED chips on the second repairing carrier plate as second repairing chips.
Optionally, the second repairing carrier plate 1b may also be prepared by the preparation method of the repairing carrier plate 1 for Micro-LEDs, and considering that the Micro-LED chips on the back plate 31 are repaired for the second time, in order to avoid the problem of position interference during the repairing, the arrangement density of the Micro-LED chips on the second repairing carrier plate 1b should be smaller than the arrangement density of the Micro-LED chips on the back plate 31, that is, smaller than the preset arrangement density. For example, since the second repairing is performed, the arrangement density of the Micro-LED chips on the second repairing carrier board 1b may be 50% of the preset arrangement density, so that the second repairing chip 112 on the second repairing carrier board 1b may not interfere with other Micro-LED chips on the back board 31 when the second defective LED chip 311b on the back board 31 is subsequently repaired.
607. And adjusting the position of the second repairing carrier plate relative to the back plate so as to align a second repairing chip on the second repairing carrier plate to a second position to be repaired, and transferring the second repairing chip to the second position to be repaired.
In this way, the position of the second repair chip 112 can be made to correspond to the second site to be repaired 312b, thereby facilitating the transfer of the second repair chip 112 to the second site to be repaired 312 b.
It is understood that there may be a plurality of second repair chips 112, and there may also be a plurality of second locations to be repaired 312 b.
As shown in fig. 7, taking the Micro-LED chip with the defect in the pixel point region 31a on the back plate 31 as a red Micro-LED chip as an example, that is, the second defective LED chip 311b is a red Micro-LED chip (as shown in (a) in fig. 7, if there is an NG mark in (a) in fig. 7, it is the second defective LED chip 311b), the second repairing chip 112 on the second repairing carrier plate 1b should be the same red Micro-LED chip.
At the time of repair, since the blank area 31b, i.e. the second location to be repaired 312b, is reserved on the back plate 31, therefore, the position of the second repairing carrier plate 1b relative to the back plate 31 can be adjusted, so that the second repairing carrier plate 1b moves to the second repairing chip 112 to align with the second position 312b to be repaired, then the second repair chip 112 is separated from the second repair carrier 1b by laser irradiation, the separated second carrier board 1b is then transferred to the second position 312b to be repaired by the transfer structure, and finally, by pressing or bonding, so that the second repair chip 112 is firmly adhered to the second site to be repaired 312b, and at the same time, the second repairing chip 112 is conducted with the circuit on the second to-be-repaired position 312b, so as to complete the repairing of the second defective LED chip 311b (as shown in fig. 7 (b)).
It should be noted that, if the back panel 31 is continuously detected after the second repair is completed, and if it is detected that the defective LED chips still exist on the back panel 31 and the third, fourth or more repairs are required, the second repair method may be referred to above to provide the repair carrier plate 1 having the arrangement density of the Micro-LED chips in a corresponding ratio to the preset arrangement density, for example, the repair carrier plate 1 having the arrangement density of the Micro-LED chips in an amount of 25% or 12.5% of the preset arrangement density may be provided, and the determination of the ratio may be based on the number of repairs and the condition that the Micro-LED chips on the back panel 31 do not interfere with each other. And then, transferring the Micro-LED chips on the repair carrier board 1, and so on until no defective Micro-LED chip is detected on the back board 31.
Therefore, by the Micro-LED repairing method of the display device, the Micro-LED chips with the defects on the back plate can be repaired by the repairing support plate, the repairing LED chips used for repairing on the repairing support plate are transferred to the positions to be repaired of the corresponding defective Micro-LED chips on the back plate, the defective Micro-LED chips are repaired on the basis that the defective Micro-LED chips are not pulled out, repairing difficulty is reduced, and repairing reliability is improved. Meanwhile, a large number of Micro-LED chips are distributed on the repairing support plate, so that the Micro-LED chips with a plurality of defects can be repaired at one time, and the repairing efficiency is high.
In addition, the arrangement density of the Micro-LED chips on the repairing carrier plate can be adjusted according to the preset arrangement density, so that a plurality of repairing carrier plates with different arrangement densities can be prepared at one time when the repairing carrier plate is prepared, and the repairing carrier plate can be used for repairing for many times. Therefore, the Micro-LED repairing method of the display device can repair the display device after being repaired for one time for many times, and the Micro-LED chip with the defect does not need to be pulled out during each repairing, so that the repairing difficulty is low, and the repairing efficiency is high.
The preparation method of the Micro-LED repairing carrier board and the Micro-LED repairing method of the display device disclosed in the embodiments of the present application are described in detail, and specific examples are applied to explain the principle and the implementation manner of the present application, and the description of the embodiments is only used to help understand the preparation method of the Micro-LED repairing carrier board and the Micro-LED repairing method of the display device and the core concept thereof; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. A preparation method of a Micro-LED repairing carrier plate is characterized in that the Micro-LED repairing carrier plate is applied to a display device, the display device comprises a back plate and Micro-LED chips arranged on the back plate in a preset arrangement density array, the repairing carrier plate is used for repairing the defective Micro-LED chips on the back plate, and the method comprises the following steps:
providing a Micro-LED wafer and a temporary carrier plate, and attaching the Micro-LED wafer to the temporary carrier plate, wherein the Micro-LED wafer comprises a substrate and a plurality of Micro-LED chips attached to the substrate;
separating the substrate from the Micro-LED chips of the Micro-LED wafer so that the Micro-LED chips are attached to the temporary carrier plate;
and providing a target carrier plate, and transferring at least part of the Micro-LED chips on the temporary carrier plate to the target carrier plate to obtain a repairing carrier plate with the Micro-LED chip arrangement density being less than or equal to the preset arrangement density.
2. The method of claim 1, wherein after separating the substrate from the Micro-LED chips to attach the Micro-LED chips to the temporary carrier board, and before providing a target carrier board and transferring at least a portion of the Micro-LED chips on the temporary carrier board to the target carrier board to obtain a repair carrier board with the Micro-LED chips arranged at a density less than or equal to the predetermined arrangement density, the method further comprises:
covering a light shield corresponding to at least part of the Micro-LED chip on one side of the temporary carrier plate, which is far away from the Micro-LED chip;
and removing part of the material of the temporary carrier plate which is not covered with the light shield so as to expose the Micro-LED chips which are not covered on the temporary carrier plate.
3. The method as claimed in claim 2, wherein the providing a target carrier, transferring at least some Micro-LED chips on the temporary carrier to the target carrier to obtain a repair carrier having the arrangement density of the Micro-LED chips less than or equal to the preset arrangement density comprises:
providing a target carrier plate, and placing the target carrier plate on one side of the temporary carrier plate, which is far away from the photomask;
and irradiating the exposed Micro-LED chips on the temporary carrier plate by adopting a laser emitter so as to separate the irradiated Micro-LED chips from the temporary substrate and transfer the irradiated Micro-LED chips to the target carrier plate, thereby obtaining the repairing carrier plate with the Micro-LED chip arrangement density being less than or equal to the preset arrangement density.
4. The method according to any one of claims 1 to 3, wherein a glue layer is provided on the target carrier, and the Micro-LED chips are bonded to the target carrier through the glue layer when being transferred onto the target carrier.
5. The method according to any of the claims 1 to 3, wherein the Micro-LED chip is attached to the temporary carrier plate at the end of the Micro-LED chip provided with the electrode.
6. A method for repairing a Micro-LED of a display device, the method comprising:
providing a back plate, wherein the back plate comprises a pixel point area and a blank area, the pixel point area is used for arranging Micro-LED chips which are arranged in an array with preset arrangement density, and the blank area at least comprises a first position to be repaired;
detecting the defect condition of the Micro-LED chip on the back plate to obtain the position of a first defective LED chip and the first position to be repaired corresponding to the first defective LED chip;
providing a first repairing carrier plate with Micro-LED chips, and determining the Micro-LED chips corresponding to the first defective LED chips on the first repairing carrier plate as first repairing chips, wherein the arrangement density of the Micro-LED chips on the first repairing carrier plate is the same as the preset arrangement density, and the first repairing carrier plate is prepared by the method of any one of claims 1 to 5;
and adjusting the position of the first repairing carrier plate relative to the backboard so as to enable a first repairing chip on the first repairing carrier plate to be aligned with the first position to be repaired, and transferring the first repairing chip to the first position to be repaired.
7. The method of claim 6, wherein the first location to be repaired is located on one side of the first defective LED chip.
8. The method of claim 6, wherein the blank area further comprises a second location to be repaired;
after the transferring the first repair chip to the first position to be repaired, the method further comprises:
detecting the defect condition of the Micro-LED chip on the back plate again to obtain the position of a second defective LED chip and a second position to be repaired corresponding to the second defective LED chip, wherein the second position to be repaired is positioned on one side of the second defective LED chip;
providing a second repairing carrier plate with Micro-LED chips, and determining the Micro-LED chips corresponding to the second defective LED chips on the second repairing carrier plate as second repairing chips; wherein the arrangement density of the Micro-LED chips on the second repair carrier is less than the preset arrangement density, and the second repair carrier is prepared by the method according to any one of claims 1 to 5;
and adjusting the position of the second repairing carrier plate relative to the back plate so as to align the second repairing chip on the second repairing carrier plate to the second position to be repaired, and transferring the second repairing chip to the second position to be repaired.
9. The method according to any one of claims 6 to 8, wherein every three of the Micro-LED chips on the pixel site area form a chip assembly, and the chips are arranged in rows and/or columns on the backplane;
the two adjacent rows or two adjacent columns of chip combinations are arranged at intervals, and the blank area is formed at the interval between the two adjacent rows or two adjacent columns of chip combinations;
each chip combination comprises a red Micro-LED chip, a green Micro-LED chip and a blue Micro-LED chip.
10. The method of claim 9, wherein the blank area comprises a plurality of blank location units, each blank location unit corresponding to each Micro-LED chip of the pixel area.
CN202210753805.8A 2022-06-28 2022-06-28 Preparation method of Micro-LED repairing support plate and Micro-LED repairing method of display device Pending CN115116925A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI820957B (en) * 2022-10-07 2023-11-01 東捷科技股份有限公司 Monitor repair methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI820957B (en) * 2022-10-07 2023-11-01 東捷科技股份有限公司 Monitor repair methods

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