CN115132639A - Preparation method of Micro-LED repairing support plate and Micro-LED repairing method of display device - Google Patents

Preparation method of Micro-LED repairing support plate and Micro-LED repairing method of display device Download PDF

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CN115132639A
CN115132639A CN202210751902.3A CN202210751902A CN115132639A CN 115132639 A CN115132639 A CN 115132639A CN 202210751902 A CN202210751902 A CN 202210751902A CN 115132639 A CN115132639 A CN 115132639A
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micro
led
repairing
carrier plate
led chips
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陈书志
李佳育
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Shanghai Wingtech Information Technology Co Ltd
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Shanghai Wingtech Information Technology Co Ltd
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Priority to CN202210751902.3A priority Critical patent/CN115132639A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The application discloses a preparation method of a Micro-LED repairing support plate and a Micro-LED repairing method of a display device, wherein the preparation method of the Micro-LED repairing support plate comprises the following steps: providing a Micro-LED wafer and a temporary carrier plate, and attaching the Micro-LED wafer to the temporary carrier plate, wherein the Micro-LED wafer comprises a substrate and a plurality of Micro-LED chips attached to the substrate; separating the substrate from the Micro-LED chip so as to enable the Micro-LED chip to be attached to the temporary carrier plate; acquiring target information of the defective Micro-LED chips on the back plate, wherein the target information at least comprises the number of the defective Micro-LED chips and position information of the defective Micro-LED chips; and providing a target carrier plate, and transferring at least part of Micro-LED chips corresponding to the target information on the temporary carrier plate to the target carrier plate according to the target information of the defective Micro-LED chips on the backboard so as to obtain a repair carrier plate. By adopting the scheme, the Micro-LED chip repairing device can repair a plurality of defective Micro-LED chips at one time, so that the repairing is not needed to be carried out singly, and the repairing efficiency is high.

Description

Preparation method of Micro-LED repairing support plate and Micro-LED repairing method of display device
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a preparation method of a Micro-LED repairing carrier plate and a Micro-LED repairing method of a display device.
Background
The Micro Light Emitting Diode (Micro-LED) has self-luminous display characteristics, is an all-solid-state LED, has the characteristics of long service life, high brightness, low power consumption, small volume, ultrahigh resolution and the like, and can be applied to extreme environments such as high temperature or radiation and the like. Compared with the OLED technology which is self-luminous display, the Micro-LED has the advantages of high efficiency, long service life, relatively stable material, difficult environmental influence and capability of avoiding the phenomenon of ghost shadow.
At present, in a display device, defect detection is often required to be performed on Micro-LED chips on a back plate of the display device, and when a defect is detected, the defective Micro-LED chip needs to be repaired. The current repairing mode can only repair a Micro-LED chip with one defect at a time, and the repairing efficiency is very low.
Disclosure of Invention
The embodiment of the application discloses a preparation method of a Micro-LED repairing support plate and a Micro-LED repairing method of a display device, which can repair Micro-LED chips with multiple defects at one time and effectively improve repairing efficiency.
In order to achieve the above object, in a first aspect, an embodiment of the present application discloses a method for manufacturing a Micro-LED repairing carrier plate,
the Micro-LED repairing support plate is applied to a display device, the display device comprises a back plate and a plurality of Micro-LED chips arranged on the back plate in an array mode, the repairing support plate is used for repairing the defective Micro-LED chips on the back plate, and the method comprises the following steps:
providing a Micro-LED wafer and a temporary carrier plate, and attaching the Micro-LED wafer to the temporary carrier plate, wherein the Micro-LED wafer comprises a substrate and a plurality of Micro-LED chips attached to the substrate;
separating the substrate from the Micro-LED chip so as to enable the Micro-LED chip to be attached to the temporary carrier plate;
acquiring target information of the defective Micro-LED chips on the back plate, wherein the target information at least comprises the number of the defective Micro-LED chips and position information of the defective Micro-LED chips;
and providing a target carrier plate, and transferring the Micro-LED chips corresponding to the target information on the temporary carrier plate to the target carrier plate according to the target information of the defective Micro-LED chips on the backboard so as to obtain a repair carrier plate.
As an optional implementation manner, laser galvanometer equipment is adopted to acquire target information of the defective Micro-LED chip on the back plate.
As an alternative to the above-described embodiment,
the providing of the target carrier board and the transferring of the Micro-LED chips corresponding to the target information on the temporary carrier board to the target carrier board according to the target information of the defective Micro-LED chips on the back board to obtain the repair carrier board comprises:
and providing a target carrier plate, and performing laser dissociation on the Micro-LED chip corresponding to the target information on the temporary carrier plate by the laser galvanometer equipment according to the target information so as to transfer the dissociated Micro-LED chip to the target carrier plate to obtain a repair carrier plate.
As an optional implementation manner, a glue layer is disposed on the target carrier, and the Micro-LED chip is bonded to the target carrier through the glue layer when being transferred onto the target carrier.
As an optional implementation manner, when the Micro-LED chip is attached to the temporary carrier plate, an end of the Micro-LED chip provided with the electrode is attached to the temporary carrier plate.
In a second aspect, the present application further discloses a method for repairing Micro-LEDs of a display device, where the display device includes a backplane and a plurality of Micro-LED chips arranged in an array on the backplane, and the method includes:
providing a repairing carrier plate with a Micro-LED chip, wherein the repairing carrier plate is prepared by the preparation method of the Micro-LED repairing carrier plate according to the first aspect;
and adjusting the position of the repairing carrier plate relative to the back plate so as to transfer the Micro-LED chip on the repairing carrier plate to the back plate.
As an optional embodiment, the transferring the Micro-LED chips on the repair carrier to the backplane includes:
pulling out the defective Micro-LED chip on the back plate;
moving the repairing carrier plate to enable the Micro-LED chips on the repairing carrier plate to be aligned to the missing positions of the Micro-LED chips on the backboard;
and transferring the Micro-LED chip on the repairing carrier plate to the missing position of the Micro-LED chip on the back plate.
As an optional implementation manner, the backplane includes a pixel area and a blank area located on one side of the pixel area, where the pixel area is used for arranging Micro-LED chips in an array, and the transferring the Micro-LED chips on the repair carrier board to the backplane includes:
moving the repairing support plate to enable the Micro-LED chips on the repairing support plate to be aligned to the position, corresponding to the defective Micro-LED chip, of the blank area;
and transferring the Micro-LED chips on the repairing carrier plate to the position, corresponding to the defective Micro-LED chip, of the blank area of the back plate.
As an optional implementation manner, in the Micro-LED chips on the pixel area, every three Micro-LED chips form a chip combination, and the chips are combined into rows and/or arranged in rows on the back plate;
the two adjacent rows or two adjacent columns of chip combinations are arranged at intervals, and the blank area is formed at the interval between the two adjacent rows or two adjacent columns of chip combinations;
and each three Micro-LED chips respectively comprise a red Micro-LED chip, a green Micro-LED chip and a blue Micro-LED chip.
As an optional implementation manner, the blank area includes a plurality of blank location units, and each blank location unit corresponds to each Micro-LED chip of the pixel area.
Compared with the prior art, the beneficial effect of this application lies in:
in the preparation method of the Micro-LED repairing carrier plate and the Micro-LED repairing method of the display device, disclosed by the embodiment of the application, the repairing carrier plate is obtained by obtaining target information of a defective Micro-LED chip on a back plate of the display device and transferring at least part of Micro-LED chips corresponding to the target information on the temporary carrier plate to the target carrier plate according to the target information. Therefore, the prepared repairing carrier plate can be used for repairing the Micro-LED chips with the defects on the back plate, and the repairing LED chips for repairing on the repairing carrier plate are transferred to the back plate, so that the repairing of the defective Micro-LED chips on the back plate is realized. Because a large number of Micro-LED chips are distributed on the repairing carrier plate, a plurality of defective Micro-LED chips can be repaired at one time, so that single repairing is not needed, and the repairing efficiency is high.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method for manufacturing a Micro-LED repair carrier according to the present application;
FIG. 2 is a schematic process diagram of a method for manufacturing a Micro-LED repair carrier according to the present application;
FIG. 2A is a schematic illustration of a defective Micro-LED chip on a backplane and a Micro-LED chip on a repair carrier;
FIG. 3 is a flow chart of a Micro-LED repair method for a display device according to the present application;
FIG. 4 is a flow chart of the repair method of FIG. 3;
FIG. 5 is another flow chart of the repair method of FIG. 3;
FIG. 6 is a schematic structural view of the back plate of FIG. 5;
fig. 7 is a schematic diagram illustrating a repairing process of the display device in fig. 5.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the present application, the terms "upper", "lower", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as appropriate.
Furthermore, the terms "mounted," "disposed," "provided," and "connected" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as the case may be.
Furthermore, the terms "first," "second," and the like are used primarily to distinguish one device, element, or component from another (the specific type and configuration of the device may be the same or different), and are not used to indicate or imply the relative importance or number of the indicated devices, elements, or components. "plurality" means two or more unless otherwise specified.
The Micro Light Emitting Diode (Micro-LED) has self-luminous display characteristics, is an all-solid-state LED, has the characteristics of long service life, high brightness, low power consumption, small volume, ultrahigh resolution and the like, and can be applied to extreme environments such as high temperature or radiation and the like. Compared with the OLED technology which is self-luminous, the Micro-LED has the advantages of high efficiency, long service life, relatively stable material, no environmental influence and no ghost phenomenon.
At present, in a display device, defect detection is often required to be carried out on Micro-LED chips on a backboard of the display device, and when the defects are detected, the Micro-LED chips with the defects are required to be repaired.
When repairing the defective Micro-LED chip, a mode of repairing one Micro-LED chip at a time is adopted, and the repairing mode is as follows: the method comprises the steps of removing a defective Micro-LED chip on a back plate in a laser irradiation mode, determining the removal position, then adhering the intact Micro-LED chip on the Micro-LED chip to the removal position on the back plate, and finally pressing or bonding the intact Micro-LED chip on the back plate for conduction.
However, the inventor has found that when the number of the defective Micro-LED chips on the back plate is large, the repair efficiency is very low because the repair process needs to be repeated for a single time, such as a single removal, a single adhesion, a lamination, or a bonding process.
Based on the above, the application discloses a preparation method of a Micro-LED repairing carrier plate and a repairing method of repairing a Micro-LED of a display device by using the repairing carrier plate obtained by the preparation method, wherein the repairing carrier plate can be used for repairing a plurality of Micro-LED chips with defects on the display device, namely, the repairing of a plurality of or even a large number of defective Micro-LED chips can be realized at one time, and the repairing efficiency is high.
The specific implementation process of the method for manufacturing a Micro-LED repairing carrier board and the method for repairing a Micro-LED of a display device according to the embodiments of the present application will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1 to 2 together, a first aspect of the present application discloses a method for manufacturing a Micro-LED repairing carrier, where the Micro-LED repairing carrier obtained by the method is applicable to a display device, and the display device includes a backplane and Micro-LED chips arranged in an array on the backplane. Considering that the Micro-LED chips are arranged on the backplane, when the backplane is manufactured or used, the Micro-LED chips may fail to affect the display effect of the display device, for example, some Micro-LED chips may be defective Micro-LED chips in the plurality of Micro-LED chips on the backplane, and at this time, the defective Micro-LED chips on the backplane need to be repaired to ensure the display effect of the display device.
The prepared Micro-LED repairing support plate is used for repairing the defective Micro-LED chip on the back plate.
Specifically, the preparation method of the Micro-LED repairing carrier plate comprises the following steps:
101. providing a Micro-LED wafer and a temporary carrier plate, and attaching the Micro-LED wafer to the temporary carrier plate.
As shown in fig. 2 (a), the Micro-LED wafer 11 optionally includes a substrate 11a and a plurality of Micro-LED chips 11b attached to the substrate 11 a. The Micro-LED chip 11b is attached to the substrate 11a mainly by laser paste when attached to the substrate 11 a. Illustratively, the substrate 11a may include, but is not limited to, a sapphire substrate, a glass substrate, and the like.
In the step 101, when the Micro-LED chip 11 is attached to the temporary carrier 14, the temporary carrier 14 may be provided with a laser glue layer 15, so that during attachment, one end of the Micro-LED chip 11b with the electrode is attached to the temporary carrier 14 through the laser glue layer 15, thereby implementing attachment of the Micro-LED chip 11b and the temporary carrier 14. In this way, the Micro-LED chip 11 can be attached to the temporary carrier plate 14 for subsequent removal of the substrate 11 a.
102. And separating the substrate from the Micro-LED chips of the Micro-LED wafer so as to enable the Micro-LED chips to be attached to the temporary carrier plate.
In this way, the Micro-LED chips 11b on the Micro-LED wafer 11 can be transferred onto the temporary carrier 14, resulting in a mass transfer.
As shown in (b) of fig. 2, optionally, in the step 102, as can be seen from the foregoing, the Micro-LED chips 11b on the Micro-LED wafer 11 are bonded to the substrate 11a by laser glue, so that the substrate 11a and the Micro-LED chips 11b can be separated by, for example, laser dissociation, i.e., by laser irradiation.
103. And acquiring target information of the defective Micro-LED chip on the back plate.
Optionally, the target information at least includes the number of the defective Micro-LED chips on the backplane and the position information of the defective Micro-LED chips, so that the condition of the defective Micro-LED chips on the backplane can be known, and the foundation can be buried in a subsequent repairing process.
Optionally, the manner of acquiring the target information of the defective Micro-LED chips on the backplane may include, but is not limited to, scanning the defective Micro-LED chips on the backplane with a laser scanner, or may also be acquired by a sensor or a detector.
For example, as shown in fig. 2 (c), a laser galvanometer device (i.e., a laser scanner) may be used to scan the defective Micro-LED chips on the back plate to obtain the number and position information of the defective Micro-LED chips.
104. And providing a target carrier plate, and transferring at least part of Micro-LED chips corresponding to the target information on the temporary carrier plate to the target carrier plate according to the target information of the defective Micro-LED chips on the back plate to obtain a repaired carrier plate.
It should be noted that, considering that when the Micro-LED chips on the temporary carrier are transferred to the target carrier, the transfer is mainly performed according to the target information of the defective Micro-LED chips on the backplane, the above step 103, step 102 and step 101 are not in sequence, that is, the step 103 may be performed after the step 102 and the step 101, or may be performed before the step 102 and the step 101.
In some embodiments, the step 104 may specifically include the following steps:
1041. and providing a target carrier plate.
1042. And laser galvanometer equipment carries out laser dissociation on the Micro-LED chips corresponding to the target information on the temporary carrier plate according to the target information of the defective Micro-LED chips on the back plate, so that the dissociated Micro-LED chips are transferred to the target carrier plate to obtain the repaired substrate.
As shown in fig. 2 (c), it can be known from the foregoing that the laser galvanometer device is a laser scanner, that is, a laser emitter on the laser galvanometer device is used to irradiate a portion of the Micro-LED chips on the temporary carrier 14 corresponding to the target information (for convenience of distinguishing, the Micro-LED chips on the repair carrier 1 are referred to as repair chips 1a), so that the laser glue on the temporary carrier 14 can be decomposed, and the Micro-LED chips can be separated from the temporary carrier 14 conveniently, quickly and as nondestructively as possible, thereby reducing the probability of damage to the Micro-LED chips when the Micro-LED chips on the temporary carrier 14 are transferred.
Therefore, according to the scheme, laser galvanometer equipment is adopted, the number of Micro-LED chips to be transferred on the temporary substrate 14 and the positions of the Micro-LED chips to be transferred on the target carrier plate 16 are determined according to target information of the defective Micro-LED chips on the back plate, which is acquired in advance, so that the arrangement conditions (including the number and the positions) of the Micro-LED chips on the obtained repairing carrier plate 1 are consistent with the defective Micro-LED chips on the back plate.
As shown in (d) of fig. 2, optionally, a glue layer 17 is disposed on the target carrier 16, and the Micro-LED chip 11b can be bonded to the target carrier 16 through the glue layer 17 when being transferred onto the target carrier 16. Illustratively, the glue layer 17 may include, but is not limited to, laser glue, silicon glue, or other light-sensitive glue.
Alternatively, the adhesive layer 17 may include a main body portion 17a and a plurality of spaced apart protruding portions 17b, the main body portion 17a is used for adhering to the target carrier 16, the protruding portions 17b are disposed on the main body portion 17a, and the protruding portions 17b are used for adhering to the corresponding repair chips 1 a. Specifically, the number of the protruding portions 17b is adapted to the number of the repair chips 1a adhered on the target carrier 16, that is, each repair chip 1a is adhered on each corresponding protruding portion 17 b. The protruding height of the protruding portion 17b protruding the main body portion 17a can be less than or equal to 100um, so that the protruding portion 17b has sufficient adhesive ability and can avoid increasing the overall thickness of the repair carrier plate 1.
It is understood that the above-mentioned convex portion 17b is formed mainly due to: when the Micro-LED chips on the temporary carrier 14 are separated by laser irradiation, the temporary carrier 14 and the Micro-LED chips are bonded and fixed by laser glue, so that after separation, part of the laser glue remains on the Micro-LED chips 11b, and when the separated repairing chips 1a are transferred to the target carrier 16, the separated Micro-LED chips need to be cleaned to remove the remaining laser glue thereon. The removing method can also be, for example, laser irradiation or chemical etching, so that, during the removing, not only the residual laser glue on the Micro-LED chip is removed, but also a part of the laser glue on the target carrier 16 is removed, and the protrusion 17b is formed.
As shown in fig. 2A, (a) in fig. 2A is target information for detecting a defective Micro-LED chip 3a on the backplane 3, and other normal Micro-LED chips are hidden in the figure. Fig. 2A (b) shows the repair carrier board 1 matching the target information of the defective Micro-LED chip 3a of the back board 3, where the repair chips 1a on the repair carrier board 1 are arranged in the same number and at the same positions as the defective Micro-LED chips 3 a.
According to the preparation method of the Micro-LED repairing carrier plate 1 disclosed by the first aspect of the application, firstly, Micro-LED chips on a Micro-LED wafer 11 are transferred onto a temporary carrier plate 14, then target information of the defective Micro-LED chips on a back plate is obtained, and the Micro-LED chips corresponding to the target information on the temporary carrier plate 14 are transferred onto a target carrier plate 16, so that the repairing carrier plate 1 with the arrangement number and the arrangement position of the Micro-LEDs matched with the arrangement number and the arrangement position of the defective Micro-LED chips on the back plate is formed, and further, the defective Micro-LED chips on the back plate can be repaired by the Micro-LED chips on the repairing carrier plate 1.
How to repair the defective Micro-LED chip on the backplane by using the repair carrier 1 will be described in detail with reference to the drawings.
Referring to fig. 3 to 5, a second aspect of the present application discloses a method for repairing a Micro-LED of a display device, the method using the repairing carrier of the first aspect for repairing. Specifically, the method comprises the following steps:
301. and providing a repairing carrier plate with the Micro-LED chip.
Optionally, the repairing carrier plate 1 is prepared by the method for preparing a Micro-LED repairing carrier plate according to the first aspect.
302. And adjusting the position of the repairing carrier plate relative to the back plate so as to transfer the Micro-LED chip on the repairing carrier plate to the back plate.
For the sake of understanding, the Micro-LED chips on the repair carrier board 1 are referred to as repair chips 1a, and the defective Micro-LED chips on the backplane 3 are referred to as defective chips 3 a. Since the arrangement number and the arrangement position of the repair chips 1a on the repair carrier plate 1 are the same as the arrangement number and the arrangement position of the defect chips 3a on the back plate 3, the repair chips 1a can be aligned to the defect chips 3a by adjusting the position of the repair carrier plate 1 relative to the back plate 3, and the repair chips 1a can be transferred to the back plate 3.
In view of the several ways of transferring the patch chip 1a to the back plate 3, the following description will be made with reference to the drawings.
In an alternative embodiment, as shown in fig. 4, the repairing chip 1a may be transferred to the back plate 3 by removing the defective chip 3a on the back plate 3, and transferring the repairing chip 1a to the back plate 3 at a position corresponding to the position where the defective chip 3a is removed. That is, the step 302 may exemplarily include the following steps:
3021. and pulling out the defective Micro-LED chip on the back plate.
It is understood that the step of removing the defective chip 3a on the back plate 3 may be performed before the step 301, or may be performed after the step 301, and the steps are not sequentially performed.
3022. And moving the repairing support plate to enable the Micro-LED chips on the repairing support plate to be aligned to the missing positions of the Micro-LED chips on the back plate.
Alternatively, the moving of the repairing carrier plate 1 may be realized by a transferring device, that is, in the process of adjusting the repairing carrier plate 1, the position of the repairing carrier plate 1 relative to the backplane 3 is mainly adjusted by the transferring device, so that the repairing chips 1a on the repairing carrier plate 1 are aligned to the missing positions of the defective chips 3a on the backplane 3.
3023. And transferring the Micro-LED chip on the repairing carrier plate to the missing position of the Micro-LED chip on the back plate.
Optionally, the repairing chip 1a is transferred to the position of the backboard 3 from which the defective chip 3a has been removed by a transferring device, and then the repairing chip 1a is firmly adhered to the position of the backboard 3 from which the defective chip 3a has been removed by, for example, pressing or bonding, and the repairing chip 1a is conducted with the circuit on the backboard 3, so as to complete the repairing of the defective chip 3 a.
In another alternative embodiment, referring to fig. 5 to 7, the repairing chip 1a may be transferred to the back plate 3 by reserving a blank position on the back plate 3 instead of pulling out the defective chip 3a on the back plate 3, and transferring the repairing chip 1a to the reserved blank position on the back plate 3.
That is, in this manner, a blank area needs to be reserved on the back plate 3. Optionally, the back plate 3 is a back plate 3 of the display device, and a circuit (not shown) may be disposed on the back plate 3, and the circuit may be formed together when the back plate 3 is manufactured, so that when the Micro-LED chips are arranged on the back plate 3, the Micro-LED chips can be turned on through the circuit, and turn-on light emission of the Micro-LED chips is realized.
As shown in fig. 6, optionally, considering that the Micro-LED chips are generally arranged on the surface of the back plate 3, based on this, the surface of the back plate 3 may include a pixel region 30 and a blank region 31, the pixel region 30 may be used for arranging the Micro-LED chips in an array, and the blank region 31 is reserved for a position where the repairing chip 1a on the carrier board 1 is arranged to repair the Micro-LED chips with defects (i.e., the defective chips 3a) on the pixel region 30.
In view of this, regarding the surface of the back plate 3, the blank area 31 is provided for the following repair chip 1a on the repair carrier plate 1, and therefore, the blank area 31 is also provided with a wire, which is a reserved wire for conducting the repair chip 1 a.
In some embodiments, considering that the Micro-LED chips of a display device typically include blue Micro-LED chips, green Micro-LED chips, and red Micro-LED chips, for the Micro-LED chips on the pixel area 30, every three Micro-LED chips form a chip assembly arranged on the back plate 3 in rows and/or columns. The two adjacent rows or columns of chip assemblies are spaced apart from each other, and the space 31 is formed at the spacing between the two adjacent rows or columns of chip assemblies, in other words, the space 31 is located between the two adjacent rows or columns of chip assemblies. As can be seen, for the surface of the back plate 3, when the Micro-LED chips on the pixel area 30 are arranged in rows and/or columns, there are a plurality of blank areas 31, and each blank area 31 is respectively located between two adjacent rows or two adjacent columns of chip combinations. Thus, by using the blank area 31, when repairing the defective chip 3a on the pixel point area 30, the repairing chip 1a on the repairing carrier board 1 is directly disposed on the blank area 31 and conducted with the circuit on the blank area 31 without removing the defective chip 3a on the pixel point area 30, and the repairing method is simple, convenient and reliable.
Further, each chip combination comprises a red Micro-LED chip, a green Micro-LED chip and a blue Micro-LED chip. Correspondingly, the blank area 31 includes a plurality of blank position units 31a, and each blank position unit 31a corresponds to each Micro-LED chip of the pixel area 30. As can be seen, for the blank area 31, in order to facilitate repairing the defective chip 3a on the pixel point area 30 on the blank area 31, each blank position unit 31a on the blank area 31 corresponds to each Micro-LED chip, so that when the Micro-LED chip corresponding to the blank position unit 31a is defective, a normal Micro-LED chip can be transferred to the blank position unit 31a corresponding to the defective Micro-LED chip, thereby repairing the defective Micro-LED chip.
Based on this, in the present embodiment, the step 302 may exemplarily include:
3021. and moving the repairing carrier plate to enable the Micro-LED chips on the repairing carrier plate to be aligned to the position of the blank area corresponding to the defective Micro-LED chips.
That is, the repairing carrier 1 can be moved by the transferring device, so that the repairing chip 1a on the repairing carrier 1 is aligned with the position of the blank area 31 corresponding to the defective chip 3a, that is, the position of the blank position unit 31a corresponding to the defective chip 3a, for example, as shown in fig. 7, taking the defective chip 3a on the pixel point area 30 as a blue Micro-LED chip (other Micro-LED chips are hidden in the figure), it can be seen from the figure that there is a blank area 31 reserved on the back plate 3 in addition to the defective chip 3a, and the blank area 31 includes a plurality of blank position units 31 a.
3022. And transferring the Micro-LED chips on the repair carrier plate 1 to the positions, corresponding to the defective Micro-LED chips, of the blank area 31 of the back plate 3.
Specifically, during repairing, as shown in fig. 7, since the blank area 31, that is, the blank position unit 31a, is reserved on the back plate 3, the repairing carrier plate 1 can be moved to the position where the repairing chip 1a is aligned with the blank position unit 31a corresponding to the defective chip 3a, then the repairing chip 1a is separated from the repairing carrier plate 1 by, for example, laser irradiation, and then the separated repairing chip 1a is transferred to the blank position unit 31a by a transfer device, and finally the repairing chip 1a is firmly adhered to the blank position unit 31a by, for example, pressing or bonding, and the circuit of the repairing chip 1a and the circuit of the blank position unit 31a are conducted at the same time, so as to complete repairing of the defective chip 3 a.
The method has the advantages that the blank area 31 is reserved on the back plate 3, the reserved blank area 31 is used for arranging the repairing chips 1a on the repairing support plate 1, the defect chips 3a on the back plate 3 are repaired in a mode of not pulling out the defect chips 3a on the back plate 3, the defect Micro-LED chips are repaired on the basis of not pulling out the defect Micro-LED chips, repairing difficulty is reduced, and repairing reliability is improved.
Therefore, by the Micro-LED repairing method of the display device, the repairing carrier plate 1 is utilized to repair the Micro-LED chips with defects on the back plate 3, the repairing chips 1a used for repairing on the repairing carrier plate 1 are transferred to the positions of the back plate 3 corresponding to the defective Micro-LED chips, and a large number of Micro-LED chips are distributed on the repairing carrier plate 1, and the distribution number and the distribution positions of the Micro-LED chips on the repairing carrier plate 1 are matched with the defective Micro-LED chips on the back plate 3, so that the repairing method can repair a plurality of defective Micro-LED chips at one time, and the repairing efficiency is high.
In addition, the repair carrier plate 1 of the application can be suitable for repairing the pulled defect Micro-LED chip on the back plate 3, can also be suitable for repairing the defect Micro-LED chip without pulling the defect Micro-LED chip on the back plate 3, can select different repair modes according to actual conditions, and has a wider application range.
The preparation method of the Micro-LED repairing carrier plate 1 and the Micro-LED repairing method of the display device disclosed in the embodiments of the present application are described in detail above, specific examples are applied herein to explain the principle and the implementation manner of the present application, and the description of the embodiments above is only used to help understanding the preparation method of the Micro-LED repairing carrier plate 1 and the Micro-LED repairing method of the display device and the core concept thereof; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. A preparation method of a Micro-LED repairing carrier plate is characterized in that the Micro-LED repairing carrier plate is applied to a display device, the display device comprises a back plate and a plurality of Micro-LED chips arranged on the back plate in an array mode, the repairing carrier plate is used for repairing the defective Micro-LED chips on the back plate, and the method comprises the following steps:
providing a Micro-LED wafer and a temporary carrier plate, and attaching the Micro-LED wafer to the temporary carrier plate, wherein the Micro-LED wafer comprises a substrate and a plurality of Micro-LED chips attached to the substrate;
separating the substrate from the Micro-LED chip so as to enable the Micro-LED chip to be attached to the temporary carrier plate;
acquiring target information of the defective Micro-LED chips on the back plate, wherein the target information at least comprises the number of the defective Micro-LED chips and position information of the defective Micro-LED chips;
and providing a target carrier plate, and transferring at least part of Micro-LED chips corresponding to the target information on the temporary carrier plate to the target carrier plate according to the target information of the defective Micro-LED chips on the backboard so as to obtain a repair carrier plate.
2. The method of claim 1, wherein target information of defective Micro-LED chips on the backplane is obtained using a laser galvanometer device.
3. The method of claim 2, wherein the providing a target carrier board, transferring the Micro-LED chips corresponding to the target information on the temporary carrier board to the target carrier board according to the target information of the defective Micro-LED chips on the backplane to obtain a repaired carrier board comprises:
and providing a target carrier plate, and performing laser dissociation on the Micro-LED chip corresponding to the target information on the temporary carrier plate by the laser galvanometer equipment according to the target information so as to transfer the dissociated Micro-LED chip to the target carrier plate to obtain a repair carrier plate.
4. The method according to any one of claims 1 to 3, wherein a glue layer is provided on the target carrier, and the Micro-LED chip is bonded to the target carrier by the glue layer when being transferred onto the target carrier.
5. The method according to any of the claims 1 to 3, wherein the Micro-LED chip is attached to the temporary carrier plate at the end of the Micro-LED chip provided with the electrode.
6. A method for repairing Micro-LEDs of a display device, wherein the display device comprises a back plate and a plurality of Micro-LED chips arranged on the back plate in an array mode, and the method comprises the following steps:
providing a repairing carrier plate with a Micro-LED chip, wherein the repairing carrier plate is prepared by the preparation method of the Micro-LED repairing carrier plate according to any one of claims 1 to 5;
and adjusting the position of the repairing carrier plate relative to the back plate so as to transfer the Micro-LED chip on the repairing carrier plate to the back plate.
7. The method of claim 6, wherein the adjusting the position of the repair carrier relative to the backplane to transfer the Micro-LED chips on the repair carrier onto the backplane comprises:
pulling out the defective Micro-LED chip on the back plate;
moving the repairing carrier plate to enable the Micro-LED chips on the repairing carrier plate to be aligned to the missing positions of the Micro-LED chips on the backboard;
and transferring the Micro-LED chip on the repairing carrier plate to the missing position of the Micro-LED chip on the back plate.
8. The method of claim 6, wherein the backplane comprises a pixel site area and a blank area on one side of the pixel site area, the pixel site area is used for arranging Micro-LED chips in an array, and the adjusting the position of the repair carrier relative to the backplane to transfer the Micro-LED chips on the repair carrier onto the backplane comprises:
moving the repairing carrier plate to enable the Micro-LED chips on the repairing carrier plate to be aligned to the position, corresponding to the defective Micro-LED chip, of the blank area;
and transferring the Micro-LED chips on the repairing carrier plate to the position, corresponding to the defective Micro-LED chip, of the blank area of the back plate.
9. The method of claim 8, wherein every third of the Micro-LED chips on the pixel site area form a chip assembly, and the chip assembly is arranged in rows and/or columns on the backplane;
the two adjacent rows or two adjacent columns of chip combinations are arranged at intervals, and the blank area is formed at the interval between the two adjacent rows or two adjacent columns of chip combinations;
wherein, every three Micro-LED chips respectively comprise a red Micro-LED chip, a green Micro-LED chip and a blue Micro-LED chip.
10. The method of claim 9, wherein the blank area comprises a plurality of blank location units, each blank location unit corresponding to each Micro-LED chip of the pixel area.
CN202210751902.3A 2022-06-28 2022-06-28 Preparation method of Micro-LED repairing support plate and Micro-LED repairing method of display device Pending CN115132639A (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117117049A (en) * 2023-10-17 2023-11-24 迈为技术(珠海)有限公司 Wafer repair method, device, apparatus, medium and program product

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117117049A (en) * 2023-10-17 2023-11-24 迈为技术(珠海)有限公司 Wafer repair method, device, apparatus, medium and program product
CN117117049B (en) * 2023-10-17 2024-02-13 迈为技术(珠海)有限公司 Wafer repair method, device, apparatus, medium and program product

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