CN115113013A

CN115113013A - Device and method for rapidly testing ICEO (integrated circuit oxide) parameters of bipolar junction transistor

Info

Publication number: CN115113013A
Application number: CN202210914682.1A
Authority: CN
Inventors: 谢可心; 包智杰
Original assignee: Nanjing Hongtai Semiconductor Technology Co ltd
Current assignee: Nanjing Hongtai Semiconductor Technology Co ltd
Priority date: 2022-08-01
Filing date: 2022-08-01
Publication date: 2022-09-27
Anticipated expiration: 2042-08-01
Also published as: CN115113013B

Abstract

The invention discloses a device and a method for rapidly testing ICEO parameters of a bipolar junction transistor, wherein the device comprises a test device and a circuit board containing a second switch, and when the ICEO parameters are tested, a control signal CBIT level inversion is set in an ICEO parameter test item program, so that the second switch is disconnected and keeps the disconnected state; the base electrode of the bipolar junction transistor is not connected with the testing equipment any more, and the collector electrode and the emitter electrode are normally connected with the testing equipment which executes ICEO parameter testing action; after the test is finished, the control signal CBIT level is inverted again, so that the second switch is closed and keeps a closed state, the base electrode, the collector electrode and the emitter electrode of the bipolar junction transistor are connected with the test equipment again, and the test equipment executes the rest other items. The invention not only shortens the ICEO parameter testing time, but also improves the accuracy and stability of the ICEO parameter testing value.

Description

Device and method for rapidly testing ICEO (integrated circuit oxide) parameters of bipolar junction transistor

Technical Field

The invention relates to a device and a method for rapidly testing ICEO parameters of a bipolar junction transistor, belonging to the field of automatic testing of discrete semiconductors.

Background

In the small signal discrete device manufacturing process, wafer design manufacturing, seal testing, taping, and packaging account for about 15%, 35%, 40%, and 10% of the manufacturing cost, respectively. Among these, the largest factor affecting package test cost is package type, followed by test efficiency. Taking the MMBT3904 triode manufactured by a certain domestic test factory as an example, as shown in fig. 1, the ft (final test) full test time is about 42ms, the voltage item test time is about 28.95%, the leakage current parameter test time is about 71.05%, and the largest test time among the leakage current parameters is iceo (leakage current of collector and emitter) base open. Therefore, the leakage current parameter testing time has a large influence on the production testing efficiency of the product.

At present, the variety of discrete semiconductor test equipment is various, and when the test equipment is applied to the test of small-signal discrete devices, the problems of long leakage current parameter test time and poor test accuracy and stability exist.

Some manufacturers of testing equipment consider the practical application condition of a small-signal BJT (Bipolar Junction Transistor, hereinafter abbreviated as BJT), use a SHORT-circuit (SHORT) type Leakage current test item instead of an OPEN-circuit (OPEN) type Leakage current test item to perform a production test, and commonly use an ices (Leakage current of a collector and emitter bottom SHORT to emitter) test item program instead of an ICEO parameter (Leakage current of a collector and emitter bottom OPEN) test item program. The method effectively avoids the problem of long time required by ICEO parameter test, but the ICES parameter test principle is different from the ICEO parameter test principle, as shown in figure 2, in some special application fields, such as military industry, aerospace and precision medical equipment, ICEO parameter + ICES are contents required to be tested, and can not be replaced or reduced mutually. The electrical property and reliability of BJT products which are not tested by ICEO parameter test cannot be guaranteed to a certain extent.

The other part of the test equipment manufacturers disconnect the Base (Base) lead in the test system, which meets the principle requirement of the ICEO parameter test. However, as shown in fig. 3, there is a single-ended flying cable between the BJT and the test system. As the cable has parasitic parameters such as capacitance and inductance, as shown in fig. 4, the single-ended cable in the space is equivalent to an antenna, and continuously absorbs charges in the space, so that the base of the BJT has unknown charges. The BJT is a current-controlled device, especially a BJT with a large β (BJT dc amplification factor), and the base charge variation has a large influence on the conduction degree of the collector and the emitter (IE = IB + IC = IB + β IB). Therefore, the single-ended cable of the base electrode can cause the phenomena of unstable numerical value and poor precision when the ICEO parameter is tested.

Therefore, although the conventional BJT icoo parameter testing method breaks the lead of the base inside the testing system, and conforms to the principle of icoo parameter testing, the stable measurement of the icoo parameter requires a relatively long time, which is usually N times (N =1,2,3 … …) the time of the power supply cycle (20 ms in the single-ended ac power cycle in china) due to the influence of the spatial electromagnetic wave on the charge amount on the single-ended cable and the influence of the parasitic parameters of the cable itself.

Disclosure of Invention

The invention aims to: in order to overcome the defects in the prior art, the invention provides a device and a method for rapidly testing the ICEO parameter of the bipolar junction transistor.

The technical scheme is as follows: in order to achieve the purpose, the invention adopts the technical scheme that:

a rapid testing device for ICEO parameters of a bipolar junction transistor comprises testing equipment and a circuit board containing a switch II, wherein the testing equipment comprises three resource channels, namely a resource channel I, a resource channel II and a resource channel III, one side of the circuit board is connected with the resource channel I of the testing equipment, and the other side of the circuit board is connected with a base lead of the bipolar junction transistor during testing. And the second switch on the circuit board is provided with a control signal CBIT by the test equipment. And the second resource channel is used for being connected with a collector of the bipolar junction transistor during testing, and the third resource channel is used for being connected with an emitter of the bipolar junction transistor during testing. When the test equipment is used for ICEO parameter test, the level of a control signal CBIT set in the ICEO parameter test item program is reversed, so that the second switch is switched off and keeps the off state. The base of the bipolar junction transistor is no longer connected to the test equipment, the collector and emitter of the bipolar junction transistor are normally connected to the test equipment, and the test equipment performs an ICEO parameter test action. And after the ICEO parameter test is finished, inverting the level of a control signal CBIT set in the ICEO parameter test item program again to close the second switch and keep the closed state, connecting the base electrode, the collector electrode and the emitter electrode of the bipolar junction transistor with the test equipment again, and executing other items by the test equipment.

Preferably: the switch on the circuit board is provided with a control signal CBIT by the test equipment through a cable.

Preferably: the length of a lead wire of a base electrode of the bipolar junction transistor is 0.4D-0.6D, and D is the length of the test station.

A method for rapidly testing parameters of a bipolar junction transistor ICEO (integrated circuit EO) comprises the following steps:

step 1, connecting a base electrode lead of the bipolar junction transistor with a circuit board, connecting a collector electrode of the bipolar junction transistor with a second resource channel, and connecting the collector electrode of the bipolar junction transistor with a third resource channel.

And 2, when ICEO parameter testing is carried out, the testing equipment inverts the level of a control signal CBIT arranged in the ICEO parameter testing item program, so that the second switch is switched off and keeps the off state. The base of the bipolar junction transistor is no longer connected to the test equipment, the collector and emitter of the bipolar junction transistor are normally connected to the test equipment, and the test equipment performs an ICEO parameter test action.

And 3, after the ICEO parameter test is finished, the test equipment inverts the level of a control signal CBIT arranged in the ICEO parameter test item program again to close the switch II and keep the closed state, the base electrode, the collector electrode and the emitter electrode of the bipolar junction transistor are connected with the test equipment again, and the test equipment executes other remaining items.

Compared with the prior art, the invention has the following beneficial effects:

1. the ICEO parameter testing time is greatly shortened, and the effective yield (route rate) of the testing equipment in unit time is improved, so that the testing cost is reduced;

2. the accuracy and the stability of ICEO parameter test values are improved, the sorting capacity is improved, and the quality of products after test sorting is better guaranteed.

Drawings

FIG. 1 shows a FT test procedure for mass-produced MMBT3904 products of a certain domestic test plant.

FIG. 2 is a schematic diagram of the ICEO parameter and ICES parameter testing principles.

FIG. 3 is a schematic view of the BJT base cable disconnected inside the test equipment.

Fig. 4 is an equivalent model of the parasitic parameters of the cable left at the base of the BJT.

Fig. 5 is a distribution plan view of a test station of a product plate sorting machine in a country, wherein M1 is a product feeding mechanism, M2 is a visual device, M3 is a polarity testing device, M4 is a first rotary positioning device, M5 is a first testing device, M6 is a second testing device, M7 is a third testing device, M8 is a fourth testing device, M9 is a positioning correcting device, M10 is a second tower mechanism (marking and visual), M11 is a second rotary positioning device, M12 is a 3D visual detection assembly, M13 is a first material distribution box mechanism (1 minute 4), M14 is a second material distribution box mechanism (1 minute 4), M15 is an NC device, M16 is a braid packaging mechanism, M17 is a waste box, and M18 is a clear material box.

FIG. 6 is a schematic length view of a sorter test station.

Fig. 7 is a schematic diagram of a close-proximity base open scheme.

Fig. 8 is a close proximity base open test and switch control logic flow diagram.

FIG. 9 is a simulation circuit diagram of ICEO parameter test without close-distance base open.

FIG. 10 is a waveform of ICEO parameter test simulation without close-proximity base open.

FIG. 11 is a simulation circuit diagram of ICEO parametric test with close-distance open base.

FIG. 12 is a diagram of ICEO parametric test simulation waveforms with close proximity base opens.

Detailed Description

The present invention is further illustrated by the following description in conjunction with the accompanying drawings and the specific embodiments, it is to be understood that these examples are given solely for the purpose of illustration and are not intended as a definition of the limits of the invention, since various equivalent modifications will occur to those skilled in the art upon reading the present invention and fall within the limits of the appended claims.

A rapid testing device for ICEO parameters of a bipolar junction transistor is shown in figure 7 and comprises testing equipment and a circuit board with a switch II, wherein the testing equipment comprises three resource channels, namely a resource channel I, a resource channel II and a resource channel III, one side of the circuit board is connected with the resource channel I of the testing equipment, and the other side of the circuit board is connected with a base electrode lead of the bipolar junction transistor during testing. In this embodiment, the base lead needs to be disconnected at a position close to the BJT, and the disconnected position is selected according to the length of the Test station (Test station) of the Handler (Handler) during the ft (final Test) Test, as shown in fig. 5 and 6, the base lead length of the BJT is 0.4D to 0.6D, and D is the Test station length. The disconnection point is in the middle of the test station. And the second switch on the circuit board is provided with a control signal CBIT (control bit) by test equipment. And the second resource channel is used for being connected with a collector of the bipolar junction transistor during testing, and the third resource channel is used for being connected with an emitter of the bipolar junction transistor during testing. When the test equipment is used for ICEO parameter test, the level of a control signal CBIT arranged in an ICEO parameter test item program is inverted, so that the second switch is switched off and keeps a switched-off state. The base of the bipolar junction transistor is no longer connected to the test equipment, the collector and emitter of the bipolar junction transistor are normally connected to the test equipment, and the test equipment performs an ICEO parameter test action. And after the ICEO parameter test is finished, inverting the level of a control signal CBIT set in the ICEO parameter test item program again to close the second switch and keep the closed state, connecting the base electrode, the collector electrode and the emitter electrode of the bipolar junction transistor with the test equipment again, and executing other items by the test equipment.

Preferably, the following components: the switch on the circuit board is used for providing a control signal CBIT by test equipment through a cable.

A method for rapidly testing parameters of a bipolar junction transistor ICEO (integrated circuit oxide) as shown in FIG. 8 comprises the following steps:

And 2, when the test is started, the control signal CBIT controls the switch II to be closed and to keep the state, three pin bases, collectors (collectors) and emitters (emitters) of the bipolar junction transistor BJT are connected with the test equipment through cables, and test items run sequentially. When ICEO parameter test is carried out, the test equipment inverts the level of a control signal CBIT set in the ICEO parameter test item program, so that the second switch is switched off and keeps the off state. The base of the bipolar junction transistor is no longer connected to the test equipment, the collector and emitter of the bipolar junction transistor are normally connected to the test equipment, and the test equipment performs an ICEO parameter test action.

And 3, after the ICEO parameter test is finished, the test equipment inverts the level of a control signal CBIT arranged in the ICEO parameter test item again to close the switch II and keep the closed state, the base electrode, the collector electrode and the emitter electrode of the bipolar junction transistor are connected with the test equipment again, and the test equipment executes other items.

Since various types of electromagnetic waves exist in the space where we are located, at the position X0 where the single-ended cable is located, there is an electric field (obtained by solving an electromagnetic wave fluctuation equation) such as E = E0 × Sin (kX0-wt), and the electric field generates a potential difference in the cable. With the change of the position of the cable and the change of the space electromagnetic field intensity, charge and current with unstable quantity are generated on the base pin of the BJT through the transmission of the single-ended cable.

In combination with the above working process and environmental factors, when simulation software Multisim is used to simulate the test method, as shown in fig. 9-12, a nonpolar capacitor is used to replace a single-ended cable, so as to simulate the effect of the single-ended cable on the charge amount and current magnitude of the base of the BJT in the electromagnetic wave environment. When the second switch is closed, the ICEO parameter waveform (current waveform) is stable after 400 us; the ICEO parameter waveform plateaus after 300ns when Realy2 (switch two) is off. The stability time required for the icoo parameter when switch two is open is shortened by about 400us/300ns =1.33x103 times compared to the stability time required when Realy2 (switch two) is closed.

The traditional BJT ICEO parameter testing method needs a long time, has low testing efficiency and high production cost, and the quality reliability and the electrical property of the produced BJT product are difficult to ensure. The method described by the invention can greatly shorten the time for testing the ICEO parameters of the BJT, improve the accuracy and stability of the test and reduce the testing cost of the products.

The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.

Claims

1. A bipolar junction transistor ICEO parameter rapid test device is characterized in that: the testing device comprises three resource channels, namely a resource channel I, a resource channel II and a resource channel III, wherein one side of the circuit board is connected with the resource channel I of the testing device, and the other side of the circuit board is connected with a base lead of the bipolar junction transistor during testing; a second switch on the circuit board is provided with a control signal CBIT by test equipment; the second resource channel is used for being connected with a collector of the bipolar junction transistor during testing, and the third resource channel is used for being connected with an emitter of the bipolar junction transistor during testing; when the test equipment is used for ICEO parameter test, the level of a control signal CBIT arranged in an ICEO parameter test item program is inverted, so that the second switch is switched off and keeps a switched-off state; the base electrode of the bipolar junction transistor is not connected with the test equipment any more, the collector electrode and the emitter electrode of the bipolar junction transistor are normally connected with the test equipment, and the test equipment executes ICEO parameter test action; and after the ICEO parameter test is finished, inverting the level of a control signal CBIT set in the ICEO parameter test item program again to close the second switch and keep the closed state, connecting the base electrode, the collector electrode and the emitter electrode of the bipolar junction transistor with the test equipment again, and executing other items by the test equipment.

2. The device of claim 1, wherein: the switch on the circuit board is provided with a control signal CBIT by the test equipment through a cable.

3. The device of claim 1, wherein: the length of a lead of a base electrode of the bipolar junction transistor is 0.4D-0.6D, and D is the length of the test station.

4. A test method based on the bipolar junction transistor ICEO parameter quick test device of claim 1 is characterized by comprising the following steps:

step 1, connecting a base electrode lead of a bipolar junction transistor with a circuit board, connecting a collector electrode of the bipolar junction transistor with a second resource channel, and connecting the collector electrode of the bipolar junction transistor with a third resource channel;

step 2, when ICEO parameter test is carried out, the test equipment inverts the level of a control signal CBIT arranged in an ICEO parameter test item program, so that the second switch is switched off and keeps a switched-off state; the base electrode of the bipolar junction transistor is not connected with the test equipment any more, the collector electrode and the emitter electrode of the bipolar junction transistor are normally connected with the test equipment, and the test equipment executes ICEO parameter test action;