CN115106931A - Chemical mechanical polishing pad with labyrinth-shaped grooves and application thereof - Google Patents
Chemical mechanical polishing pad with labyrinth-shaped grooves and application thereof Download PDFInfo
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- CN115106931A CN115106931A CN202210719217.2A CN202210719217A CN115106931A CN 115106931 A CN115106931 A CN 115106931A CN 202210719217 A CN202210719217 A CN 202210719217A CN 115106931 A CN115106931 A CN 115106931A
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- 238000005498 polishing Methods 0.000 title claims abstract description 324
- 239000000126 substance Substances 0.000 title claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 85
- 238000002955 isolation Methods 0.000 claims abstract description 67
- 238000003860 storage Methods 0.000 claims description 44
- 239000002002 slurry Substances 0.000 claims description 34
- 238000009826 distribution Methods 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims 1
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000008139 complexing agent Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 4
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- 239000002699 waste material Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 2
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- 238000005303 weighing Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a chemical mechanical polishing pad with labyrinth grooves and application thereof, wherein the polishing pad comprises at least one polishing layer, discontinuous grooves separated by isolating bosses are arranged on the surface of the polishing layer, the discontinuous grooves comprise main grooves and auxiliary grooves, the main grooves are distributed in discontinuous concentric circles by taking the center of the polishing pad as the center of a circle, the auxiliary grooves connect adjacent main grooves, and the auxiliary grooves and the isolating bosses are respectively uniformly distributed on the main grooves at intervals to form labyrinth discontinuous groove channels. The polishing pad provided by the invention has the advantages that the stay time of polishing liquid in the grooves is prolonged through the alternate arrangement of the main grooves, the auxiliary grooves and the isolation bosses, the flow path of the polishing liquid is prolonged, and meanwhile, scraps can be discharged in time, so that the defects are reduced under the condition of reducing the consumption of the polishing liquid, and the grinding flatness is improved.
Description
Technical Field
The invention belongs to the technical field of chemical mechanical polishing, and particularly relates to a chemical mechanical polishing pad with labyrinth grooves and application thereof.
Background
In semiconductor integrated circuit fabrication, it is necessary to planarize a wafer surface using Chemical Mechanical Polishing (CMP). During chemical mechanical polishing, the wafer is pressed against the polishing pad, the wafer is moved across the polishing pad, which is filled with a polishing medium, and slurry or other polishing medium flows into the polishing pad and into the gap between the wafer and the polishing layer. The wafer surface is polished and planarized by the chemical and mechanical action of the polishing layer and the polishing medium on the surface.
In order to optimize polishing pad design, the interaction between the polishing layer, the polishing medium, and the wafer surface during CMP is increasingly being studied. Most polishing pad developments over the years have been empirical in nature. Many polishing pad designs have focused on providing various patterns of voids and arrangements of grooves in the polishing layer, which patterns are said to improve slurry utilization and polishing uniformity. Many different groove and void patterns and arrangements have been implemented over the years. Prior art groove patterns include radial, concentric circular, cartesian grid, spiral, and the like.
The grooves of the chemical mechanical polishing pad and the flow of slurry between the polishing pad and the wafer have a large influence on the polishing rate and the flatness. The traditional polishing pad in the form of concentric grooves has the problems that the flow path is closed and the fragments cannot be removed in time, and the traditional grooves in the form of grids, radial lines, involutes and the like have the problems of short slurry flow path, low slurry utilization rate and large slurry consumption. Patent US8920220B2 provides a polishing pad having a novel groove design, having a shape connected by an elliptical or semi-circular curve, wherein the peaks of one pattern are aligned with the valleys of another adjacent pattern, which allows slurry to migrate from the peaks of one pattern to the valleys of the other pattern, from the valleys of the pattern to the adjacent peaks, and to circulate sequentially and eventually out of the polishing pad. Thereby properly controlling the residence time of the slurry by controlling the flow path of the slurry to increase the polishing rate, but such migration of the groove slurry requires a higher rotational speed of the polishing machine to increase the centrifugal force and is not suitable for deep groove polishing pads.
Another groove design polishing pad is provided in CN110802508A, which comprises a plurality of concentric grooves disposed along the circumferential direction, and a plurality of radial grooves disposed along the radial direction and connecting adjacent circumferential grooves, wherein the radial grooves are divided and arranged in an equal ratio array based on the conventional radial grooves, compared with the conventional radial grooves, the flow path of the polishing liquid can be extended, and the retention time of part of the polishing liquid in the grooves can be increased, but because the grooves penetrate each other, the flow path of the polishing liquid is not fixed, and there is a large flow uncertainty, and this uncertainty also increases the retention time of the polishing waste liquid and polishing debris, which is liable to cause polishing scratches.
Patent US9409276B2 provides a spiral groove polishing pad, the design of the grooves enables the polishing slurry to flow from the center of the polishing circle to the outside of the polishing pad, greatly increasing the flow path of the polishing slurry, but the grooves limit only one flow path of the polishing slurry, so that the residence time of the polishing slurry between the wafer and the polishing pad is too long, the polishing slurry stays on the polishing pad after being ineffective, increasing the polishing time, and the polishing debris stays on the polishing pad for a long time due to the too long flow path, which increases the number of scratches in the polishing process and is not beneficial to polishing.
No matter the current polishing pad is a grid-shaped groove, a radial groove or a spiral groove, a large amount of polishing solution is consumed during polishing, and the grid-shaped groove and the concentric circles are provided with radial grooves. At present, no polishing pad has the advantages of clear flow paths of concentric circular grooves and spiral grooves and low consumption of polishing solution, so that the design of the clear flow path of the polishing solution under the conditions of keeping polishing uniformity and reducing polishing scratches has important significance in improving the utilization rate of the polishing solution.
Disclosure of Invention
It is an object of the present invention to provide a chemical mechanical polishing pad satisfying the above-mentioned needs, which has the advantages of clear flow paths of concentric grooves and spiral grooves, and is characterized by low consumption of polishing slurry.
It is still another object of the present invention to provide a use of the above chemical mechanical polishing pad.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides a chemical mechanical polishing pad with labyrinth recess, includes a polishing layer, the polishing layer surface is equipped with by keeping apart the discontinuous recess of boss divided, discontinuous recess includes main recess and vice recess, main recess uses the polishing pad center to be discontinuous concentric circles as the centre of a circle and distributes, vice recess links to each other adjacent main recess, vice recess is in with the isolation boss even interval distribution respectively on the main recess, forms the discontinuous groove channel of labyrinth for the polishing solution can both flow outside polishing layer through an at least flow channel in arbitrary groove position on the polishing layer.
In a preferred embodiment, a liquid storage groove is further arranged on the main groove in the polishing track area, and the liquid storage groove is a groove with an enlarged width; the maximum width of the liquid storage tank is preferably smaller than the distance between two circles of main grooves; preferably, the maximum width of the liquid storage tank is 1-15 mm, and the depth of the liquid storage tank is 2-8 mm; more preferably, the liquid storage grooves, the auxiliary grooves and the isolation bosses are uniformly distributed on the main groove at intervals.
In a specific embodiment, the secondary flutes and the reservoirs are selected from curved flutes, straight flutes, or a combination thereof, and the isolation bosses are selected from rectangles, arcs, or a combination thereof.
In a specific embodiment, each circle of the main groove is provided with at least M (M is more than or equal to 2) isolating bosses, and each circle of the main groove is divided into M (M is more than or equal to 2) sections, wherein M is the number of starting points of the polishing liquid flowing in.
In a particular embodiment, each of the primary grooves can communicate with the next adjacent primary groove through at least one secondary groove along a radius of the polishing layer.
In one embodiment, at least one of the secondary grooves is tangential to the primary groove, and the secondary groove, which is tangential to the primary groove, extends in a direction that is consistent with the linear velocity of the polishing pad as it rotates.
In a particular embodiment, there are at least two of said reservoirs; preferably, the main groove, the auxiliary groove, the liquid storage groove and the isolation boss can form at least two flow channels to enable the polishing liquid to flow from the main groove at the innermost ring of the polishing pad to the outermost side of the polishing pad.
In a specific embodiment, the width of the main groove is 0.01-2 mm, preferably 0.2-1 mm; the distance between the two circles of main grooves is 0.05-10 mm, and preferably 1-5 mm; preferably, the width of the auxiliary groove is 0.05-10 mm, and preferably 0.5-5 mm.
In a specific embodiment, two side lines of the isolation boss are parallel, extension lines of the two side lines intersect with the innermost small circle to form two intersection points, and an included angle between a connecting line of the two intersection points and the circle center is 5-60 degrees, and preferably 20-35 degrees.
In another aspect, a chemical mechanical polishing pad is used for chemical mechanical polishing.
Compared with the prior art, the chemical mechanical polishing pad has the following beneficial effects:
the chemical mechanical polishing pad is provided with the labyrinth-shaped groove channel, the labyrinth-shaped groove is provided with at least two flow channels, polishing liquid can flow out of the outermost side of the polishing pad from the innermost side groove close to the circle center of the polishing pad, the flow path of the polishing liquid is determined by the interpenetration arrangement of the auxiliary groove and the isolation boss, the polishing uniformity is increased, the retention probability of polishing waste liquid and polishing debris on the polishing surface is greatly reduced, sufficient fresh polishing liquid is provided for the contact position of the polishing sheet and the polishing layer due to the interpenetration of the liquid storage groove, and the polishing speed is ensured. In the preferred scheme, the grooves are tangent to the main groove through the auxiliary grooves, so that the polishing liquid can be quickly thrown out in the tangential direction of the rotating speed, the auxiliary grooves are arranged at intervals to prolong the polishing path, and the isolation bosses with arc-shaped sections can prolong the retention time of the polishing liquid in the main groove under the condition that the polishing liquid freely returns.
The polishing pad has the characteristics of good fluidity and high polishing rate like grid-shaped grooves and radial grooves, overcomes the defect of uncertainty of polishing paths of the grooves, and has the characteristic of polishing uniformity of concentric grooves, so that the retention time of polishing liquid in the grooves can be prolonged under the condition of reducing the consumption of the polishing liquid, scratches in the polishing process are reduced, the utilization rate of the polishing slurry is increased, and the grinding flatness is improved.
Drawings
FIG. 1A schematically illustrates a polishing pad in plan view according to one embodiment of the present invention.
FIG. 1B shows a schematic view of the flow channels formed by the grooves on the surface of the polishing pad of FIG. 1A, for a total of 4 flow channels.
FIG. 1C is a schematic view showing the included angles of the side lines on both sides of the isolation boss according to the present invention.
FIG. 2A shows schematically a plan view of a polishing pad according to another embodiment of the present invention.
FIG. 2B shows a schematic view of the flow channels formed by the grooves on the surface of the polishing pad of FIG. 2A, for a total of 4 flow channels.
FIG. 2C is a schematic view of one of the slurry flow paths of the polishing pad of FIG. 2A.
FIG. 3A shows schematically a plan view of a polishing pad according to yet another embodiment of the present invention.
FIG. 3B shows 2 flow channels formed by grooves in the surface of the polishing pad shown in FIG. 3A.
FIG. 3C is an enlarged partial view of the intersection of the primary groove and the second secondary groove in the polishing pad of FIG. 3A.
FIG. 4A shows schematically a plan view of a polishing pad according to yet another embodiment of the present invention.
FIG. 4B shows the flow channels formed by the grooves on the surface of the polishing pad of FIG. 4A, for a total of 4 flow channels.
FIG. 4C is an enlarged partial view of the primary groove and first secondary groove interface region and the primary groove and second interface region of the polishing pad of FIG. 4A.
FIG. 5 is an enlarged partial cross-sectional view of the spacer boss of the present invention.
FIG. 6 is a schematic enlarged view of a portion of the intersection region of the main groove and the reservoir of the present invention.
Wherein 100 is a first chemical mechanical polishing pad, 101 is a center of a polishing pad, 102 is a main groove, 103 is a sub groove, 104 is an isolation boss, 105 is a liquid storage tank, 106 is an inflow starting point, 107 is a flow outlet, 200 is a second chemical mechanical polishing pad, 201 is a center of a polishing pad, 202 is a main groove, 203 is a first sub groove, 204 is a second sub groove, 205 is a liquid storage tank, 206 is an isolation boss, 207 is an inflow starting point, 208 is a polishing pad outlet, 300 is a third chemical mechanical polishing pad, 301 is a center of a polishing pad, 302 is a main groove, 303 is a first sub groove, 304 is a second sub groove, 305 is a liquid storage tank, 306 is an isolation boss, 307 is an inflow starting point, 308 is a flow outlet, 400 is a fourth chemical mechanical polishing pad, 401 is a center of a polishing pad, 402 is a main groove, 403 is a first sub groove, 404 is a second sub groove, 405 is a liquid storage tank, 406 is an isolation boss, 407 is an inflow starting point, 408 is a flow outlet, 501 is a boss section, and 601 is a boss section of a liquid storage tank.
Detailed Description
The following examples will further illustrate the method provided by the present invention in order to better understand the technical solution of the present invention, but the present invention is not limited to the listed examples, and should also include any other known modifications within the scope of the claims of the present invention.
As shown in fig. 1A, a first chemical mechanical polishing pad 100 according to a first embodiment (embodiment 1) of the present invention comprises concentric primary grooves 102, secondary grooves 103, isolation lands 104, and liquid-storing grooves 105 uniformly distributed on the surface of a polishing layer centered on a center 101 of the polishing pad, wherein the concentric primary grooves 102 are selected from discontinuous concentric circular grooves, which are separated into discontinuous circles by the isolation lands 104 uniformly distributed at intervals, the width of the concentric primary grooves 102 is, for example, 0.18mm, the depth of the concentric primary grooves is, for example, 0.8mm, the interval is, for example, 3mm, the width, depth, and interval of each circle of the concentric primary grooves 102 are the same, but in this embodiment, the width and depth of the primary grooves may be uniform or non-uniform in other embodiments, the secondary grooves 103 in this embodiment are selected from straight-shaped grooves, all the secondary grooves 103 are tangent to the concentric primary grooves 102 and intersect the primary grooves 102 in adjacent circles tangent to the primary grooves 102, connecting two adjacent circles of main grooves 102. Assuming that the number of the main grooves 102 is N (N is an even number), the number of the sub grooves 103 is N/2, if N is an odd number, and the row of sub grooves is tangent to the innermost main groove, the number of the row of sub grooves is (N +1)/2, if the row of sub grooves is not tangent to the innermost main groove, the number of the row of sub grooves is (N-1)/2, in this groove type embodiment, the number of the inflow starting points 106 is the same as the number of the flow paths, the number of the sub grooves on each section of the main groove is the same as the number of the inflow starting points and the number of the flow paths, in this embodiment, 4, the width of the sub grooves 103 is, for example, 0.18mm, the depth of the sub grooves 103 is the same as that of the main grooves 102, in a radial direction passing through the center of the polishing pad, the sub grooves 103 tangent to the main grooves 102 are arranged at intervals, all the tangent points are located in the radial direction, in the radial direction, the distance between the auxiliary grooves 103 is twice the distance between the concentric main grooves 102, which is called a row of auxiliary grooves 103, the angle between the straight lines of the tangent points of the adjacent two rows of auxiliary grooves and the main grooves is 45 degrees, only one row of auxiliary grooves in the adjacent two rows of auxiliary grooves is tangent to the first circle of concentric main grooves close to the center of the circle, eight rows of auxiliary grooves 103 are shared in the present embodiment, the innermost auxiliary grooves 103 of the polishing pad are all tangent to the first circle of concentric main grooves 102 close to the center 101 of the polishing pad, of course, the number and arrangement of the auxiliary grooves 103 are limited to this embodiment, and in other embodiments, the auxiliary grooves 103 may have other different variations. The isolation boss 104 of this embodiment is inserted in the main groove 102, the cross section of the isolation boss 104 is arc, which is convenient for the polishing solution to come and go, all the isolation bosses 104 are symmetrical about the radial straight line passing through the center 101 of the polishing pad, the radial straight line coincides with the straight line of the tangent point of the main groove 102 and the adjacent row of the auxiliary grooves 103 in the clockwise direction, that is, in the same radial direction, the auxiliary grooves 103 and the isolation boss 104 are arranged at intervals, and the interval distance is equal to the interval of each section of the main groove 102 in the same circle. In a radial direction, assuming that the number of the concentric main grooves 102 is N (N is an even number), the number of each row of the isolation bosses 104 is N/2, if N is an odd number, and the row of the isolation bosses 104 is located in the innermost main groove 102, the number of the isolation bosses 104 is (N +1)/2, if the isolation bosses 104 are not located in the innermost main groove 102, the number of the isolation bosses 104 is (N-1)/2, as shown in fig. 1C, an included angle between an extension line of two side lines of the isolation bosses 104 and a connecting line between an intersection point of a small circle at the innermost side and a circle center of the polishing layer is 18 degrees, the length of the isolation bosses 104 is the same as the width of the concentric main grooves 102, the height of the isolation bosses 104 is the same as the depth of the main grooves 102, the isolation bosses 104 are arranged at intervals in the radial direction of the circle center 101 of the polishing pad, the interval distance is 2 times the interval between the concentric main grooves 102, the isolation bosses 104 are called a row of isolation bosses 104 and form a circumferential array around the center 101 of the polishing pad, in this embodiment, the array angle of the eight rows of isolation bosses 104 with respect to the center 101 is 45 degrees, the isolation boss 104 at the innermost side of the polishing pad is the isolation boss 104 in the main groove 102 of the first circle of concentric circles close to the center 101 of the polishing pad, of course, the number and arrangement of the auxiliary grooves 103 and the isolation bosses 104 are limited to this embodiment, and in other embodiments, the isolation bosses 104 may have other different changes. In the embodiment, the row of the auxiliary grooves and the row of the isolation bosses are respectively in central symmetry with the opposite row of the auxiliary grooves and the opposite row of the isolation bosses about the circle center of the polishing layer. The liquid storage tank 105 of this embodiment is located on the polishing track, and is the same as the position of the secondary groove 103 on the polishing track, and is arranged at intervals, wherein the secondary groove 103, the isolation boss 104 and the liquid storage tank 105 are inserted between the main grooves 102 to form a labyrinth groove channel.
FIG. 1B shows a flow channel formed by grooves on the surface of the polishing pad shown in FIG. 1A, wherein the flow channel is divided into four same flow channels, and during polishing, under the centrifugal force generated by the rotation of the polishing pad, if the slurry flows from the inflow starting point 106 in the first concentric main groove close to the center 101 of the polishing pad, the slurry flows into the second concentric main groove 102 through the secondary groove 103 between the two isolating bosses 104 due to the blocking action of the isolating bosses 104 in the first concentric main groove 102, and the slurry is more likely to flow out from the secondary groove 103 without clogging between the two isolating bosses 104 due to the extending direction of the secondary groove 103 and the linear velocity direction of the polishing pad, and when the slurry flows into the main groove where the liquid storage tank 105 is located, the slurry stays in the liquid storage tank 105 due to inertia, sufficient slurry is provided for polishing in such a manner that the slurry flows out of the polishing pad through the outermost one of the sub-grooves 103, and the outermost one of the sub-grooves 103 and the first one of the sub-grooves 103 are in the same row of sub-grooves 103 in a flow path, so that the slurry flows around the center 101 of the polishing pad for exactly one turn. In the present embodiment, there are four identical flow channels and four flow outlets 107, and due to the existence of the secondary grooves 103 and the liquid storage grooves 105, the polishing liquid can continuously flow during the polishing process, so that the tight seal between the wafer and the polishing pad can be weakened, and the isolating bosses 104 can enable the polishing liquid to stay between the wafer and the polishing pad for a longer time, thereby enabling the polishing to be more uniform.
Fig. 2A shows a second chemical mechanical polishing pad 200 according to a second embodiment (embodiment 2) of the present invention, which is different from the first embodiment in that there are two types of sub-grooves, namely a first sub-groove 203 and a second sub-groove 204, the first sub-groove 203 is tangent to the main groove 202 and extends to intersect with the adjacent main groove 202, all the tangent points are located in the radial direction across the center of the polishing layer and have a width of 0.3mm, the second sub-grooves are symmetrically distributed about a straight line across the center 201 and intersect with the main groove 202 and have a width of 0.3mm, the depths of the first sub-groove 203 and the second sub-groove 204 are the same as the depth of the main groove 202, the length of the second sub-groove 204 is the same as the interval of the aforementioned concentric main groove 202, the shapes of the sub-grooves are all selected from linear grooves, and the second sub-grooves 204 are symmetrically distributed about a radial straight line across the center 201 of the polishing pad. In the radial direction of a circle 201 of the polishing pad, the first auxiliary grooves 203 are arranged at intervals, and the interval distance is twice of the interval of the concentric main grooves 202, and the first auxiliary grooves are called as a row of first auxiliary grooves 203; in the radial direction of a circle center 201 of the polishing pad, second auxiliary grooves 204 are arranged at intervals, main grooves 202 with twice interval distance are arranged at intervals and are called as a row of second auxiliary grooves 204, the angle between straight lines of tangent points of two adjacent rows of first auxiliary grooves 203 and the concentric main grooves is 45 degrees, only one row of first auxiliary grooves 203 in the two adjacent rows of first auxiliary grooves is tangent to a first circle of main grooves 202 close to the circle center 201, the angle of a central line of the two adjacent rows of second auxiliary grooves 204 is 45 degrees, the straight line of the tangent points of the first auxiliary grooves 203 and the main grooves of one row of second auxiliary grooves 204 adjacent in the anticlockwise direction is 22.5 degrees, one row of second auxiliary grooves and the one row of first auxiliary grooves adjacent in the anticlockwise direction are a group of auxiliary grooves, if the number of the main grooves is N (the number is an even number), the number of the auxiliary grooves in each group is N/2, if N is an odd number, and the first auxiliary grooves in the group of auxiliary grooves are tangent to the innermost main grooves, the number of the set of sub-grooves is (N +1)/2, if the first sub-groove of the set of sub-grooves is not tangent to the innermost main groove, the number of the set of sub-grooves is (N-1)/2, the first sub-groove 203 is located from the inner side of the polishing track to the center 201 area of the polishing pad, the second sub-groove 204 is located from the inner side of the polishing track to the outer area of the polishing pad, and the outermost side of the polishing pad is the first sub-groove 203. In this embodiment, the number of the inflow starting points is the same as the number of the flow paths, the number of the sub grooves on each circle of the main grooves is the same as the number of the inflow starting points and the number of the flow paths, and the number of the sub grooves is four in this embodiment, and the arrangement of the isolation bosses 206 is the same as that of the first embodiment, in which a row of the first sub grooves, a row of the isolation bosses, and a row of the second sub grooves are respectively in central symmetry with an opposite row of the first sub grooves, an opposite row of the isolation bosses, and an opposite row of the second sub grooves with respect to the center of the polishing layer. The liquid storage grooves 205 are located on the polishing track, and the arrangement is the same as that of the first embodiment, but the number and arrangement of the sub-grooves, the isolation bosses 206 and the liquid storage grooves 205 are limited to this embodiment, and other embodiments may have other variations.
FIG. 2B shows a flow channel formed by grooves on the surface of the polishing pad shown in FIG. 2A, which includes four same flow channels, the polishing liquid flows in from the inflow starting point 207. unlike the first embodiment, the former part of the flow channels is a first secondary groove 203, which is tangential to the main groove 202, the first secondary groove 203 extends in the same direction as the linear velocity of the polishing pad during rotation, the polishing liquid passes through the secondary groove faster during rotation, the secondary groove is changed into a second secondary groove 204, which is a radial groove, the flow rate is relatively slower when flowing to the polishing area, and a liquid storage groove 205 is further disposed on the polishing track, so that the polishing liquid can further stay between the polishing pad and the wafer, and the polishing pad outlet 208 is the first secondary groove 203, which can enable the polishing liquid to be rapidly thrown out of the polishing pad. Compared with the first embodiment, the polishing pad of the embodiment can enable the polishing liquid on the inner side of the polishing track to rapidly flow onto the polishing track, the flow rate of the polishing liquid on the polishing track is reduced, the retention time of the polishing liquid on the polishing track is increased under the action of the liquid storage groove 205, the utilization rate of the polishing liquid is increased, and the first auxiliary groove 203 is formed in the outer side of the polishing pad, so that the polishing waste liquid and the debris can be rapidly thrown away. The risk of scratching is reduced.
Fig. 3A shows a chemical mechanical polishing pad 300 according to a third embodiment (embodiment 3) of the present invention, which still has four inflow starting points, and differs from the second embodiment in that the second sub grooves 304 of this embodiment have twice the length of the interval between the main grooves 302, the outermost first sub grooves 303 of the polishing pad become two, that is, this embodiment has only two identical flow paths, and in this embodiment, there are four first sub grooves 303 tangent to the main grooves 302 on the first two circles of the main grooves 302 near the center 301 of the polishing pad, respectively, which is the same as the first two embodiments, except that, starting from the third circle of the main grooves 302, there are only two first sub grooves per circle of the main grooves, the number of which is the same as the number of flow outlets, and the second sub grooves begin to appear, the second sub grooves 304 existing on a straight line passing through the center 301 of the polishing pad are formed in a row of the second sub grooves 304, assuming that there are S second sub grooves per row, the number of primary grooves is (2+4S), so the number of primary grooves is even in this embodiment, which has eight rows of first secondary grooves, four rows of second secondary grooves, and the angular distribution of the eight rows of first secondary grooves is the same as that in the first and second embodiments, except that there is only one first secondary groove in the opposite four rows, which is related to the first two circles of primary grooves 302 having four first secondary grooves 303 tangent to the primary grooves 302, respectively, the line where the four rows of first secondary grooves are tangent to the primary grooves is 22.5 degrees from the centerline of the adjacent second secondary grooves in the counterclockwise direction, the four rows of first secondary grooves are centered with respect to the center of the polishing pad, the remaining four rows of first secondary grooves are (1+2S), the remaining four rows of first secondary grooves are also centered with respect to the center of the polishing pad, the four rows of second secondary grooves are also centered with respect to the center of the polishing pad, the interval between the rows of second secondary grooves 304 is twice the interval of the primary grooves 302, this embodiment has four rows of second secondary grooves 304 and four rows of first secondary grooves 303, the angle between each row of secondary grooves being 45 degrees, wherein there are a row of first secondary grooves 303 and a row of second secondary grooves 304 on both sides of the first secondary grooves 303, respectively. The arrangement of the isolation boss 306 and the liquid reservoir 305 is the same as that of the first and second embodiments. Of course, the number and arrangement of the sub-grooves, the isolation bosses and the liquid storage tanks are limited to this embodiment, and other embodiments may have different variations.
Fig. 3B shows a flow path formed by grooves on the surface of the polishing pad shown in fig. 3A, which shares two identical flow paths, assuming that the first main groove 302 near the center 301 of the polishing pad is the inflow starting point 307, unlike the second embodiment, the inflow starting point 307 of this embodiment is four, but the flow outlet 308 becomes two because there is an overlapping portion of the flow path due to the presence of the second sub-groove 304, as shown in fig. 3C, if only the second sub-groove 304 exists on the polishing track, the flow rate of the slurry is slow, and if only the first sub-groove 303 exists on the polishing track, the flow rate of the slurry is fast, since the second sub-grooves 304 and the first sub-grooves 303 alternate in the circumferential direction of the polishing pad, the velocity of the polishing liquid on the polishing track is averaged, and the polishing uniformity is further improved.
FIG. 4A shows a CMP pad 400 according to a fourth embodiment (embodiment 4) of the present invention, which also includes a pad center 401 and a concentric arrangement of primary grooves 402, different from the previous three embodiments, in which a row of primary grooves 403 and a row of secondary grooves 404 are closely arranged on both sides of each row of isolation bumps 406, the spacing of the row of primary grooves 403 is the same as that of the first embodiment, in this embodiment, when the number N of primary grooves is an even number, the number of primary grooves in each row is N/2, the number of secondary grooves in each row is N/2, the flow outlet is a secondary groove, when the number N of primary grooves is an odd number, the number of primary grooves in each row is (N +1)/2, the number of secondary grooves in each row is (N-1)/2, the flow outlet is a primary groove, the length of the secondary groove 404 is the same as that of the primary groove 402, the interval is the same as that of the first sub grooves 403, the number of inflow starting points is the same as that of the flow paths in this embodiment, the number of sub grooves on each segment of concentric main grooves is the same as that of the inflow starting points and the flow paths, in this embodiment, the number of the isolation bosses 406 in each row is the same as that of the main grooves 402, the center line of one row of isolation bosses passes through the center of the polishing layer, the straight line where the tangent point of one row of first auxiliary grooves is located coincides with the center line of the next row of isolation bosses, the center line of one row of second auxiliary grooves is parallel to the center line of the next row of isolation bosses and does not pass through the center of the polishing layer, in this embodiment, the first pair of grooves, the isolation lands, and the second pair of grooves are centered symmetrically with respect to the center of the polishing layer. The liquid storage groove 405 is located on the main groove 402 of the polishing track, two liquid storage grooves 405 are formed in a radius passing through the center of a circle, the liquid storage grooves 405 are formed in a row, the interval of the liquid storage grooves 405 is the interval of the main groove 402, the included angle between the row of liquid storage grooves 405 and the row of isolation bosses 406 is 45 degrees, and the liquid storage groove has four rows of first auxiliary grooves 403, four rows of second auxiliary grooves 404, four rows of isolation bosses 406 and four rows of liquid storage grooves 405 respectively. Of course, the number and arrangement of the sub-grooves, the isolation bosses 406 and the liquid storage grooves 405 are limited to this embodiment, and other embodiments may have other variations.
FIG. 4B shows one flow path formed by the grooves on the surface of the polishing pad shown in FIG. 4A, for a total of four identical flow paths, with four inflow origins 407 and four flow outlets 408. Compared to the first embodiment, four flow paths are fixed in the sector area of the polishing pad, and in one flow path, the first sub-grooves 403 and the second sub-grooves 404 are alternately distributed, as shown in fig. 4C, the flow of the polishing liquid is more uniform, and the polishing effect is better than that of the first embodiment.
Fig. 5 is a partially enlarged schematic view of the cross section of the isolation boss of the present invention, the isolation boss functions to block the flow inertia of the polishing liquid, the cross section 501 of the isolation boss is semicircular, and as shown in the flow direction in the figure, the polishing liquid flows back along the direction opposite to the flow inertia, so that the polishing liquid flows along the designed flow path.
Fig. 6 is a partially enlarged schematic view of the junction area between the main groove and the liquid storage groove, the section 601 of the liquid storage groove is semicircular, the liquid storage groove exists on the motion track of the wafer center on the polishing pad, because of the edge effect existing during the polishing process, that is, the polishing rate of the wafer edge is greater than that of the wafer center, because the rotating speed of the wafer edge is greater than that of the wafer center, the liquid storage groove is increased to make the storage amount of the polishing liquid in the wafer center greater than that in the edge portion, thereby increasing the polishing rate of the wafer center and reducing the polishing edge effect.
Comparative example 1
The polishing pad main groove width was 0.1mm as compared with example 1, and the rest was exactly the same as example 1.
Comparative example 2
The width of the main grooves of the polishing pad was 2mm as compared with example 2, and the rest was identical to example 2.
Comparative example 3
In comparison with example 3, the polishing pad had no sub-grooves, and the rest was identical to example 3.
Comparative example 4
In comparison with example 3, the first and second sub-grooves of the polishing pad have a width of 10mm, and the rest is identical to example 3.
Comparative example 5
In comparison with example 3, the polishing pad had no isolated lands, and was otherwise identical to example 3.
Comparative example 6
The pad isolation land width was 10mm as compared to example 3, and the rest was identical to example 3.
Comparative example 7
In comparison with example 3, the polishing pad had no reservoir, and was otherwise identical to example 3.
Comparative example 8
The polishing pad liquid storage groove diameter was 10mm as compared with example 3, and the other was the same as example 3.
Polishing conditions
The polishing pressure is 1.0-2.0psi, the rotation speed of the polishing disk and the polishing head is 80-100/80-100rpm, the polishing solution is Cu Slurry (11 times diluted, pH is 6-7), the polishing pad correction wheel is 3M A165, the flow rate of the polishing solution is 200-300ml/min, and the polishing machine is an E460E/12 type 300mm chemical mechanical planarization system. An 8 inch sio.sub.2 wafer was deposited to 6000. ANG. The HDP was polished for 1 minute under the following polishing conditions.
Test conditions
The method comprises the following steps of weighing the mass of the polishing solution before and after polishing by using a Mettler-Torledo balance to analyze the utilization rate of the polishing solution (the mass of the polishing solution after polishing is increased because a complexing agent in the polishing solution reacts with a copper material on a wafer to convert a solid copper material into copper ions which are dissolved in the polishing solution), wherein the test method comprises the following steps: weighing 100ml of unused polishing solution and polishing solution collected after polishing, calculating the weight difference value twice, and adopting a molar mass formula: and (3) calculating the molar mass of the copper ions to obtain the molar mass of the complexing agent participating in the reaction, and calculating the mass of the complexing agent participating in the reaction according to a molar mass formula, wherein the calculation method of the utilization rate of the polishing solution is the ratio of the mass of the complexing agent participating in the reaction to the mass of the complexing agent in the unused polishing solution.
Four Dimensions Four point probe tester (333A) measures the thickness of 81 test points on the copper film and calculates the average difference to determine the copper polishing rate RR.
The surface roughness value after polishing was determined by measuring 9 points on the polished copper surface using a Sanfeng SJ-210 roughness meter and calculating the average of the 9 points.
The polishing experiments and tests were carried out using the polishing pads of the examples and comparative examples, respectively, by the methods described previously, and the results are shown in Table 1.
TABLE 1 polishing pad examples and comparative examples data sheet
TABLE 2 polishing pad examples and comparative polishing results data Table
| Utilization ratio of polishing solution (%) | RR(nm/min) | Polished section Ra (nm) | |
| Example 1 | 46 | 610 | 7 |
| Example 2 | 50 | 700 | 5 |
| Example 3 | 64 | 720 | 3 |
| Example 4 | 48 | 620 | 6 |
| Comparative example 1 | 43 | 380 | 21 |
| Comparative example 2 | 35 | 400 | 18 |
| Comparative example 3 | 27 | 450 | 12 |
| Comparative example 4 | 32 | 390 | 19 |
| Comparative example 5 | 40 | 450 | 13 |
| Comparative example 6 | 38 | 410 | 16 |
| Comparative example 7 | 41 | 600 | 9 |
| Comparative example 8 | 43 | 650 | 7 |
As can be seen from the data in the table, the polishing pads of examples 1 to 4 can uniformly disperse the slurry over the entire area by using the main grooves, the sub grooves, the isolation bosses and the liquid storage tanks in combination, and can properly control the residence time of the slurry, so that the polishing rate is maintained at a high level, the utilization rate of the polishing liquid is improved, and the polishing pad has a low roughness value.
In comparative example 1, the width of the main grooves was small, and the utilization rate of the polishing solution was close to that of example 1, but since the width of the main grooves was low and the total amount of the polishing solution was small, the polishing rate was much lower than that of example 1, and the roughness value of the polished wafer was high; in comparative example 2, the width of the main groove is large, the fluidity is good, the utilization rate of the polishing solution is low, the main groove is too large, the area of the convex region of the polishing pad is small, the contact area between the polishing pad and the polishing sheet is too small, the polishing rate is lower than that of example 1, and the roughness value of the polishing sheet is large; comparative example 3 has no sub-grooves, the fluidity of the polishing solution is almost zero, the utilization rate of the polishing solution is much lower than that of example 3, the polishing rate is not very low due to the large contact area between the polishing pad and the polishing sheet, and the roughness value of the polishing sheet is relatively low; comparative example 4 the first and second sub grooves have larger widths, resulting in much lower utilization of the polishing slurry than example 3, and the polishing pad has a smaller contact area with the polishing pad, resulting in a lower polishing rate and a larger roughness value of the polishing pad; comparative example 5 has no isolation boss, the polishing solution utilization rate is low, because the blocking effect of the isolation boss is not provided, the flow paths of the polishing solution in the groove are not fixed, the flow paths are crossed and overlapped, the polishing solution circulation is poor, the polishing rate is lower than that of example 3, and the roughness value of the polishing sheet is higher than that of example 3; in comparative example 6, the included angles of the side lines at the two sides of the isolation boss are larger, so that the flow of the polishing solution in the main groove is reduced, the polishing solution mostly flows out of the auxiliary groove, the utilization rate of the polishing solution is lower than that in example 3, the polishing rate is reduced, and the roughness value of a polished wafer is increased; comparative example 7 has no reservoir and the utilization of the polishing slurry is lower than that of example 3, but the polishing rate is slightly less than that of example 3, and the roughness value of the polished wafer is slightly larger than that of example 3; example 8 the diameter of the liquid storage tank is larger, the utilization rate of the polishing liquid is lower than that of example 3, the polishing rate is close to that of example 3, and the roughness value of the polishing sheet is close to that of example 3.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. It will be appreciated by those skilled in the art that modifications or adaptations to the invention may be made in light of the teachings of the present specification. Such modifications or adaptations should also be considered to be within the scope of the present invention as defined in the claims.
Claims (10)
1. The utility model provides a chemical machinery polishing pad with labyrinth recess, includes a polishing layer, its characterized in that, the polishing layer surface is equipped with by the discontinuous recess of isolation boss partition, discontinuous recess includes main recess and vice recess, main recess uses the polishing pad center to be discontinuous concentric circles distribution as the centre of a circle, vice recess links to each other adjacent main recess, vice recess and isolation boss are in even interval distribution respectively on the main recess, form labyrinth discontinuous groove channel for the polishing solution can both flow outside polishing layer through an at least flow channel in arbitrary groove position on the polishing layer.
2. The chemical mechanical polishing pad according to claim 1, wherein a liquid reservoir is further provided on the main groove in the polishing track region, the liquid reservoir being a groove having an increased width; the maximum width of the liquid storage tank is preferably smaller than the distance between two circles of main grooves; preferably, the maximum width of the liquid storage tank is 1-15 mm, and the depth of the liquid storage tank is 2-8 mm; more preferably, the liquid storage grooves, the auxiliary grooves and the isolation bosses are uniformly distributed on the main groove at intervals.
3. The chemical mechanical polishing pad of claim 2, wherein the secondary grooves and reservoirs are selected from curved grooves, straight grooves, or a combination thereof, and the isolation mesas are selected from rectangles, arcs, or a combination thereof.
4. The chemical mechanical polishing pad according to claim 1 or 2, wherein there are at least M (M.gtoreq.2) isolated lands per turn of the main grooves, and each turn of the main grooves is divided into M (M.gtoreq.2) segments, where M is the number of starting points of the slurry inflow.
5. The chemical mechanical polishing pad of claim 4, wherein each segment of primary grooves is communicable with a next adjacent primary groove through at least one secondary groove along a radius of the polishing layer.
6. The chemical mechanical polishing pad according to claim 5, wherein at least one of the secondary grooves is tangential to the primary groove, and the secondary groove tangential to the primary groove extends in a direction corresponding to a linear velocity of the polishing pad during rotation.
7. The chemical mechanical polishing pad according to claim 2, wherein the liquid reservoir is at least two; preferably, the main groove, the auxiliary groove, the liquid storage groove and the isolation boss form at least two flow channels for enabling the polishing liquid to flow from the innermost main groove of the polishing pad to the outermost side of the polishing pad.
8. The chemical mechanical polishing pad according to any one of claims 1 to 7, wherein the width of the main grooves is 0.01 to 2mm, preferably 0.2 to 1 mm; the distance between the two circles of main grooves is 0.05-10 mm, and preferably 1-5 mm; preferably, the width of the auxiliary groove is 0.05-10 mm, and preferably 0.5-5 mm.
9. The chemical mechanical polishing pad according to any one of claims 1 to 7, wherein two side lines of the isolation convex stage are parallel, an extension line of the two side lines intersects with the innermost small circle to form two intersection points, and an angle between a connecting line of the two intersection points and the center of the circle is 5 to 60 degrees, preferably 20 to 35 degrees.
10. Use of the chemical mechanical polishing pad according to any one of claims 1 to 9 in chemical mechanical polishing.
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