CN115094510A - Pressure relief method for split type czochralski crystal growing furnace - Google Patents
Pressure relief method for split type czochralski crystal growing furnace Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 17
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a pressure relief method for a split type czochralski crystal growing furnace, and belongs to the technical field of photovoltaics. The method provided by the invention comprises the following steps: firstly, fastening and locking a pressure relief door and a main furnace cavity by using a connecting piece; the pressure relief door is arranged on a main furnace cavity of the split type czochralski crystal growing furnace and is buckled and locked with the main furnace cavity through a connecting piece to form a complete and sealed split type czochralski crystal growing furnace; then, a split type Czochralski crystal growing furnace is used for preparing single crystals by a Czochralski method; afterwards, when explosion happens in the split type Czochralski crystal growing furnace, the pressure in the cavity of the main furnace is increased, the pressure relief door is opened outwards under the action of pressure, and high-temperature gas flows out, so that the pressure in the cavity of the main furnace is reduced rapidly. According to the invention, the complete integrated straight pulling single crystal furnace chamber is changed into the split straight pulling single crystal furnace chamber consisting of the pressure relief door and the main furnace chamber, and when the furnace body explodes, the pressure relief door can be opened rapidly to relieve pressure, so that the problems of casualties caused by the separation of the furnace cover from the furnace body and the escape of high-temperature air flow in the furnace are avoided.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a pressure relief method for a split type Czochralski crystal growing furnace.
Background
In the photovoltaic industry, the monocrystalline silicon industry is rapidly developing at present. Monocrystalline silicon is an important component of a crystal material, is in the front of the development of new materials, and is commonly used for preparing silicon wafers in the photovoltaic and semiconductor industries. The preparation of the silicon wafer firstly needs to realize the conversion from polysilicon to monocrystalline silicon, and mainly comprises the process of converting the polysilicon from solid state heating to molten state and then converting the molten state silicon recrystallization to monocrystalline silicon solid state. The main manufacturing equipment comprises: the Czochralski single crystal growing furnace provides a foundation for the rapid expansion of the production energy in the photovoltaic industry. However, due to the extremely rapid development of the industry, measures for safety risk prevention are relatively lacked, and casualty accidents caused by the explosion of the czochralski crystal growing furnace are endless every year.
In the existing structure of the straight-pull single crystal furnace, an explosion-proof device is usually arranged, but the explosion-proof effect is generally poor, the purpose of pressure release and explosion prevention cannot be completely achieved, and in actual production, a large number of cases of furnace body explosion still exist. When the furnace body explodes, the pressure in the furnace body increases rapidly, the furnace cover and the furnace body are separated rapidly, and a large amount of high-temperature substances explode out of the furnace body at a very high speed, so that casualties are caused.
Therefore, a pressure relief method of a split type Czochralski single crystal furnace is very necessary to be developed in the technical field of photovoltaic and semiconductor silicon wafer production, so as to solve the problem of serious casualties caused by furnace body explosion in the process of preparing the monocrystalline silicon by the Czochralski method.
Disclosure of Invention
The invention mainly aims to provide a pressure relief method for a split type Czochralski crystal growing furnace, which is used for solving the problem of serious casualties caused by furnace body explosion in the process of preparing monocrystalline silicon by a Czochralski method.
The invention is realized by the following technical scheme:
the first aspect of the embodiment of the invention discloses a pressure relief method for a split type Czochralski crystal growing furnace, which comprises the following steps:
the pressure relief door is buckled and locked with the main furnace cavity through a connecting piece, the pressure relief door is arranged on the main furnace cavity of the split type czochralski crystal growing furnace and can be movably opened, and the pressure relief door is buckled and locked with the main furnace cavity through the connecting piece to form the complete and sealed split type czochralski crystal growing furnace;
the split type czochralski crystal growing furnace is used for preparing single crystals by a czochralski method;
when explosion happens in the split type Czochralski single crystal furnace, the pressure in the main furnace cavity is increased, the pressure relief door is opened outwards under the action of pressure, and high-temperature gas flows out, so that the pressure in the main furnace cavity is reduced rapidly.
Preferably, the inner surface area of the pressure relief door accounts for 1-50% of the total area of the main furnace cavity.
Preferably, the inner surface area of the pressure relief door accounts for 40-50% of the total area of the main furnace cavity.
Preferably, the installation position of the pressure relief door is close to the installation position of a crucible in the split type czochralski single crystal furnace.
Preferably, the pressure-discharge door opens outwardly by a pressure force, and the high-temperature gas flows out, and includes:
the pressure relief door is opened outwards under the action of pressure, and the high-temperature gas flows out along the direction guided by the pressure relief protection baffle, so that the high-temperature gas is prevented from rapidly diffusing to a manual operation area;
the pressure relief protection baffle is L-shaped and is installed on the pressure relief door opening side of the main furnace cavity, and the pressure relief protection baffle separates the pressure relief area in front of the pressure relief door from the manual operation area.
Preferably, the pressure relief door is fastened and locked with the main furnace cavity through a connecting piece, and the pressure relief door comprises:
the pressure relief door is tightly buckled by the sealing ring, the pressure relief door and the main furnace cavity are locked by the connecting piece, and the sealing ring is arranged at the door frame of the pressure relief door and used for plugging a gap between the pressure relief door and the main furnace cavity, so that the split type vertical pulling single crystal furnace has good air tightness.
Preferably, the pressure relief door is locked with the main furnace cavity by the connecting member, including:
the pressure relief door is fastened and locked with the main furnace cavity through the lock catch, the connecting piece comprises a hinge and a lock catch, the hinge is installed on the fixed side of the pressure relief door to enable the pressure relief door to be fixed on the main furnace cavity, and the lock catch is installed on the door opening side of the pressure relief door to enable the pressure relief door to be fastened and locked through the lock catch.
Preferably, the method further comprises:
after the pressure relief door is buckled, when a pressure sensor arranged in the split type czochralski crystal pulling furnace detects that the increasing speed of the pressure in the split type czochralski crystal pulling furnace is more than 1000Pa/min under the condition that the pressure in the split type czochralski crystal pulling furnace is lower than 10000Pa, an alarm of abnormal door closing is sent, and the preparation of single crystals by the czochralski method is stopped.
Preferably, the material and the thickness of the pressure relief door are consistent with those of the main furnace cavity.
The invention provides a pressure relief method of a split type czochralski crystal growing furnace, which comprises the following steps that firstly, a pressure relief door is buckled and locked with a main furnace cavity by utilizing a connecting piece, the pressure relief door is arranged on the main furnace cavity of the split type czochralski crystal growing furnace and can be opened movably, and the pressure relief door is buckled and locked with the main furnace cavity by the connecting piece to form a complete and sealed split type czochralski crystal growing furnace; then, starting to prepare a single crystal by a Czochralski method through a split type Czochralski crystal growing furnace; when explosion happens in the split type czochralski single crystal furnace, the pressure in the cavity of the main furnace is increased, the pressure action of the pressure relief door is outwards opened, and high-temperature gas flows out, so that the pressure in the cavity of the main furnace is rapidly reduced. According to the invention, the integral straight pulling single crystal furnace is changed into the split straight pulling single crystal furnace consisting of the pressure relief door and the main furnace cavity, when the furnace body explodes, the pressure relief door can be opened to relieve pressure, and the injury to personnel is reduced.
Compared with the prior art, the invention has the following specific beneficial effects:
1) and the explosion-proof effect is improved. According to the invention, the integral Czochralski crystal growing furnace is changed into the split type Czochralski crystal growing furnace consisting of the pressure relief door and the main furnace cavity, and the pressure relief door is arranged on the main furnace cavity, so that the distance from an explosion source is closer to that of the conventional pressure relief explosion-proof device arranged on the exhaust pipe. Therefore, when explosion happens, the pressure relief door is opened rapidly under the action of pressure, so that the pressure in the Czochralski crystal growing furnace is reduced rapidly, and the condition that the furnace cover is separated from the furnace body under the action of pressure is avoided.
2) And controlling the discharge direction of the high-temperature airflow. According to the invention, the pressure relief door is arranged, when the furnace body explodes, the pressure relief door is opened outwards under the action of pressure, and high-temperature airflow in the furnace body flows out from the opened pressure relief door, so that the leakage direction of the high-temperature airflow is controlled, and the high-temperature airflow is prevented from flowing out from other gaps or outlets of the furnace body, and surrounding workers are injured.
3) The method is simple. The invention only needs to simply change the furnace body, changes the original integral furnace body into a split type furnace body which is formed by the pressure relief door and the main furnace cavity, has simple structure and does not need to increase components. For different models of czochralski crystal growing furnaces of different manufacturers, the design can be modified according to the scheme to achieve better explosion-proof effect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive labor.
FIG. 1 is a flowchart illustrating a pressure release method of a split type Czochralski crystal growing furnace according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a split type Czochralski single crystal furnace provided by the embodiment of the invention;
description of the drawings: a-a main furnace cavity, B-a pressure relief door, C-a connecting piece and D-a pressure relief protection baffle.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings in which embodiments of the invention are shown. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
To facilitate understanding of the technical solutions proposed by the present invention, a brief description will be made of related technologies such as czochralski technology and the like.
The Czochralski method, also known as the Czochralski method, is a crystal growth method established by Czochralski. The Czochralski method is characterized in that a crucible made of fused quartz is placed in a straight-tube-shaped chamber capable of being vacuumized, polycrystalline silicon is filled in the crucible, the chamber is refilled with protective atmosphere, the crucible is heated to about 1500 ℃ by a graphite resistor, the polycrystalline silicon in the high-purity quartz crucible is melted, a small seed crystal etched by a chemical method is lowered to be contacted with a polycrystalline melt for fusion, the rotating seed crystal is lowered to be contacted with silicon melt in a soaking way, silicon atoms in the solution can form regular crystals on a solid-liquid interface along with the arrangement structure of the silicon atoms of the seed crystal, and the formed silicon single crystal is obtained after the steps of neck leading, neck reducing, shouldering, diameter control, tail ending and the like along with the gradual lifting of the seed crystal.
The Czochralski crystal growing furnace is indispensable equipment in the technical process of converting polycrystalline silicon into monocrystalline silicon, and the Czochralski crystal growing furnace explodes due to various reasons in the process of growing the silicon single crystal, so that casualties are caused. For example, when serious production accidents such as silicon leakage occur, the inner layer can be melted through by the silicon liquid, at the moment, cooling circulating water can enter the furnace and quickly become water vapor under the action of high temperature, the furnace pressure can be suddenly increased, the vacuum state in the furnace can be changed into a high-pressure state, and the furnace body is damaged due to explosion. Or, under the high temperature environment, the red phosphorus ignition point required by doping is very low, part of the doping agent red phosphorus in the heavily-doped phosphorus single crystal is volatilized in the doping and drawing processes and is deposited on furnace walls, pipelines and the like together with other oxides, after the volatile matter is accumulated to a certain degree, gas flow or slight friction can cause combustion during cleaning, heat generated by combustion is accumulated in a limited space and cannot be released, and explosion is easily caused.
Based on the above description, the technical solutions of the embodiments of the present invention are described as follows.
Detailed description of the preferred embodiment
The embodiment of the invention provides a pressure relief method for a split type czochralski crystal growing furnace, and fig. 1 is a flow chart of steps of the method, and as shown in fig. 1, the method comprises the following steps:
the pressure relief door is buckled and locked with the main furnace cavity through a connecting piece, the pressure relief door is arranged on the main furnace cavity of the split type czochralski crystal growing furnace and can be movably opened, and the pressure relief door is buckled and locked with the main furnace cavity through the connecting piece to form the complete and sealed split type czochralski crystal growing furnace;
the split type czochralski crystal growing furnace is used for preparing single crystals by a czochralski method;
when explosion happens in the split type Czochralski single crystal furnace, the pressure in the main furnace cavity is increased, the pressure relief door is opened outwards under the action of pressure, and high-temperature gas flows out, so that the pressure in the main furnace cavity is reduced rapidly.
The structure of the czochralski crystal growing furnace generally comprises an upper furnace chamber and a main furnace cavity, wherein the bottom of the upper furnace chamber is connected with a furnace cover arranged at the top of the main furnace cavity, and an electrode and crucible lifting equipment used for lifting a crucible in the main furnace cavity are arranged in the main furnace cavity. The main furnace cavity is arranged on the base. And a rotary machine head is arranged at the top of the upper furnace chamber. The Czochralski crystal growing furnace forms a low-pressure closed high-temperature environment in a main furnace cavity, monocrystalline silicon is prepared by a Czochralski method, the prepared monocrystalline rod is temporarily stored in an upper furnace chamber, and the monocrystalline rod is taken out after being cooled. The main furnace cavity of the existing czochralski crystal growing furnace is an integrated type and is a complete cylindrical cavity, and if the main furnace cavity needs to be opened, the main furnace cavity needs to be opened from a furnace cover above the main furnace cavity. The split type czochralski crystal growing furnace is characterized in that an originally complete cylindrical cavity is split into two parts, the two parts are composed of a pressure relief door and a main furnace cavity, and only when the pressure relief door is buckled with the main furnace cavity, a complete cylindrical structure is formed.
The czochralski crystal growing furnace is generally provided with an explosion-proof pressure relief device, but the effect of the explosion-proof pressure relief device is not ideal. On one hand, the explosion-proof pressure relief device is usually arranged on an exhaust pipe of the czochralski crystal growing furnace and is far away from an explosion source (a main furnace cavity) compared with a furnace cover. When the explosion occurs in the main furnace cavity, the furnace cover can be subjected to the impact force of the explosion before the explosion-proof pressure relief device, and when the explosion-proof pressure relief device does not perform the pressure relief function, the furnace cover is subjected to the pressure action and is separated from the furnace body firstly, so that high-temperature airflow in the main furnace cavity is released from the opened furnace cover and spread to workers beside the furnace body, and casualties are caused; on the other hand, because explosion-proof pressure relief device's area undersize, carry out the pressure release in-process at its explosion-proof pressure relief device, because the efficiency of pressure release is not high, the effect that leads to the pressure release is not enough to offset the pressure increase that the explosion leads to easily for pressure in the pressure release in-process furnace body lasts and rises, the bell still probably breaks away from the furnace body because of pressure, perhaps all the other parts of furnace body break away from the furnace body because of the pressure that bears is too high, makes the high temperature air current cause personnel to scald.
In this embodiment, through the main furnace cavity with straightening single crystal growing furnace change into split type, through connecting piece with pressure release door and main furnace cavity lock locking, form sealed furnace body, compare in the current pressure release explosion-proof equipment of installing on the blast pipe, be closer apart from the explosion source. Therefore, when explosion happens, the pressure in the cavity of the main furnace is increased, the pressure relief door is rapidly opened under the action of pressure, and high-temperature gas flows out, so that the pressure in the Czochralski single crystal furnace is rapidly reduced, and the condition that the stress of the furnace cover is separated from the furnace body is avoided. In addition, through the opening direction of design pressure release door, can control when the explosion takes place, follow the direction of the high temperature air current that pressure release door flows to high temperature air current outbreak when having avoided the explosion spreads the personnel operation region rapidly, causes the problem of casualties.
In one embodiment, the internal surface area of the pressure relief door is between 1-50% of the total area of the main furnace cavity.
In one embodiment, the inner surface area of the pressure relief door is 40-50% of the total area of the main furnace cavity.
In this embodiment, the pressure relief and explosion-proof effect of the pressure relief door is changed by controlling the size (inner surface area) of the pressure relief door. Specifically, the pressure that the pressure release door bore is proportional with the area, and the pressure release door account for whole main furnace cavity's surface area is big more, and its bearing area is just big more, and is just higher to pressure variation's sensitivity, when exploding in the furnace body promptly, the pressure release door can be more rapid open, carry out the pressure release. In addition, the larger the area of the pressure relief door is, the better the pressure relief effect is, and after the pressure relief door is opened, the pressure in the furnace body is reduced more quickly. However, the larger the area of the pressure relief door, the more difficult the design of the main furnace chamber, and the more difficult it is to control the direction of the high-temperature airflow flowing out of the door when the pressure relief door is opened for pressure relief. In the embodiment, the area of the pressure relief door can be controlled within the range of 1-50% of the total area of the main furnace cavity, and further, when the area is within the range of 40-50% of the total area of the main furnace cavity, the pressure relief effect is better.
In one embodiment, the installation position of the pressure relief door is close to the installation position of a crucible in the split type czochralski single crystal furnace.
The preparation of the monocrystalline silicon is mainly a process of converting polycrystalline silicon from solid state heating to molten state and then from molten state silicon recrystallization to the monocrystalline silicon solid state. In order to melt the silicon raw material, the heating temperature in the quartz crucible exceeds the melting point of the silicon material and reaches more than 1420 ℃, so that the furnace chamber is in a closed high-temperature environment for a long time. Therefore, in the process of preparing the monocrystalline silicon by the Czochralski method, the highest temperature at the crucible in the cavity of the main furnace is the most main explosion source. The explosion-proof device of the existing czochralski crystal growing furnace is usually arranged on an exhaust pipe or an auxiliary chamber, a crucible in the main furnace cavity is a main explosion source, and the explosion-proof device is far away from the explosion source, so that the explosion-proof device is closer to a furnace cover of the explosion source and can be firstly under the action of pressure when explosion occurs, and thus the explosion-proof device is separated from the furnace body. In this embodiment, the closer the installation position of the pressure relief door is to the installation position of the crucible, the closer the installation position of the pressure relief door is to the explosion source, so that when an explosion occurs in the furnace chamber, the pressure relief door can react more rapidly, and the pressure relief door can be opened outward rapidly after being subjected to pressure to relieve pressure.
In one embodiment, the pressure relief door opens outwardly under pressure and hot gas flows out, comprising:
the pressure relief door is opened outwards under the action of pressure, and the high-temperature gas flows out along the direction guided by the pressure relief protection baffle, so that the high-temperature gas is prevented from rapidly diffusing to a manual operation area;
the pressure relief protection baffle is L-shaped and is installed on the pressure relief door opening side of the main furnace cavity, and the pressure relief protection baffle separates the pressure relief area in front of the pressure relief door from the manual operation area.
Fig. 2 is a structure of a split type czochralski single crystal growing furnace shown in this embodiment, as shown in fig. 2, a is a main furnace cavity and is installed between a base and a furnace cover, B is a pressure relief door, C is a connecting piece, the pressure relief door B is installed on the main furnace cavity a through the connecting piece, and D is a pressure relief protection baffle and is installed on the door opening side of the pressure relief door B. The split type czochralski crystal growing furnace can also be provided with a pressure relief protection baffle. In this embodiment, pressure release protection baffle can be the L type, from this when the pressure release door is opened, when carrying out the pressure release, pressure release protection baffle can retrain the high temperature air current that flows in the pressure release region, and the flow direction of guide high temperature air current reduces it and regional diffusion to manual operation to reduce the possibility that causes personnel's injury.
In one embodiment, the pressure relief door is fastened and locked with the main furnace cavity through a connecting piece, and the pressure relief door comprises:
the pressure relief door is tightly buckled by the sealing ring, the pressure relief door and the main furnace cavity are locked by the connecting piece, and the sealing ring is arranged at the door frame of the pressure relief door and used for plugging a gap between the pressure relief door and the main furnace cavity, so that the split type vertical pulling single crystal furnace has good air tightness.
In the embodiment, the integrated czochralski crystal growing furnace is changed into a split type czochralski crystal growing furnace consisting of the pressure relief door and the main furnace cavity, so that a certain gap exists between the pressure relief door and the main furnace cavity, and the air tightness of the czochralski crystal growing furnace is reduced to a certain extent. This embodiment is through installing the sealing washer in pressure release door frame department for the pressure release door can prolong the sealing washer lock inseparable. Specifically, the shape of the sealing ring is determined by the shape of the pressure relief door and is arranged at the door frame of the pressure relief door, and therefore gaps between the pressure relief door and the main furnace cavity can be sealed by the sealing ring, so that the air tightness of the split type czochralski crystal growing furnace is ensured, and the influence on the quality of the prepared monocrystalline silicon is avoided.
In one embodiment, locking the vent door to the main furnace cavity by the connector comprises:
the pressure relief door is locked with the main furnace cavity in a buckled mode through the lock catch, the connecting piece comprises a hinge and a lock catch, the hinge is installed on the fixed side of the pressure relief door to enable the pressure relief door to be fixed on the main furnace cavity, and the lock catch is installed on the door opening side of the pressure relief door to enable the pressure relief door to be locked through the lock catch in a buckled mode.
In this embodiment, the hinge is used to fix the pressure relief door to the main furnace cavity, so that the pressure relief door can be opened movably. In addition, the hasp is installed to the opposite side of pressure release door, will release the pressure door lock back, can will release pressure door and main furnace cavity locking through the hasp, and the hasp can be further with that the pressure release door is inseparable with main furnace cavity lock, reduces the gap between, improves the gas tightness. When explosion happens in the furnace chamber, the pressure born by the pressure relief door reaches the limit value, the lock catch is damaged, the pressure relief door is opened, and high-temperature airflow in the furnace chamber flows out from the door-opening side of the pressure relief door, so that the pressure in the split type czochralski crystal growing furnace is reduced, and the damage of other parts due to high pressure generated by explosion, the separation from the furnace body and the injury of personnel are avoided.
In one embodiment, the method further comprises:
after the pressure relief door is buckled, when a pressure sensor arranged in the split type czochralski crystal growing furnace detects that the increasing speed of the pressure in the split type czochralski crystal growing furnace is more than 1000Pa/min under the condition that the pressure in the split type czochralski crystal growing furnace is lower than 10000Pa, an alarm for abnormal door closing is sent, and the preparation of single crystals by the czochralski method is stopped.
After the pressure relief door is buckled, before monocrystalline silicon is prepared by a czochralski method, the split type czochralski crystal growing furnace can be subjected to airtightness inspection, and after the airtightness inspection is qualified, subsequent monocrystalline silicon preparation is carried out. In the embodiment, the pressure sensor is arranged in the split czochralski crystal growing furnace, after the pressure relief door is fastened, under the condition that the pressure in the furnace is lower than 10000Pa, the pressure sensor detects that when the increasing speed of the pressure in the furnace is higher than 1000Pa/min, the pressure relief door is not fastened tightly with the main furnace cavity, and a gap still exists, so that an alarm of door closing abnormity can be sent to related workers, the workers are reminded to check the pressure relief door, the pressure relief door is fastened and locked again, and after the pressure sensor detects that the pressure in the furnace is normal, the next czochralski method is carried out to prepare the monocrystalline silicon. The defect that the air tightness in the split type straight-pull single crystal furnace is poor due to the fact that the pressure relief door is not buckled tightly is avoided, and the quality of the prepared single crystal silicon is further influenced.
In one embodiment, the pressure relief door is made of the same material and has the same thickness as the main furnace cavity.
In this embodiment, the pressure relief door may be made of the same material and thickness as the main furnace cavity, so as to ensure the stability of the split czochralski crystal growing furnace. It should be noted that different materials are different in physical and chemical properties, and have different stress coefficients, and especially in a high-temperature and high-pressure environment, the deformation degree of the pressure relief door and the main furnace cavity after being heated is inconsistent, which easily causes the gap between the pressure relief door and the main furnace cavity to be enlarged. In addition, the thickness of the pressure relief door also affects the pressure bearing capacity of the pressure relief door.
The invention provides a pressure relief method of a split type czochralski crystal growing furnace, which comprises the following steps of firstly, buckling and locking a pressure relief door and a main furnace cavity by utilizing a connecting piece; the pressure relief door is arranged on a main furnace cavity of the split type czochralski crystal growing furnace and is buckled and locked with the main furnace cavity through a connecting piece to form a complete and sealed split type czochralski crystal growing furnace; then, preparing single crystal by a split type Czochralski crystal growing furnace through a Czochralski method; afterwards, when explosion happens in the split type Czochralski crystal growing furnace, the pressure in the cavity of the main furnace is increased, the pressure relief door is opened outwards under the action of pressure, and high-temperature gas flows out, so that the pressure in the cavity of the main furnace is reduced rapidly. According to the invention, the integral straight pulling single crystal furnace is changed into the split straight pulling single crystal furnace consisting of the pressure relief door and the main furnace cavity, and the pressure relief door is arranged on the main furnace cavity, so that the pressure relief door is closer to an explosion source compared with the existing pressure relief explosion-proof device arranged on the exhaust pipe. Therefore, when explosion happens, the pressure relief door is opened rapidly under the action of pressure, so that the pressure in the Czochralski crystal growing furnace is reduced rapidly, and the condition that the furnace cover is separated from the furnace body under the action of pressure is avoided. And through setting up the pressure release door, explode in the furnace body, pressure effect is opened at the pressure release door, and the high temperature air current in the furnace body flows from the pressure release door of opening to control the direction of releasing of high temperature air current, avoided the high temperature air current to flow from all the other gaps of furnace body or export, make staff on every side receive the injury, promoted the security of czochralski crystal silicon stove preparation monocrystalline silicon.
For simplicity of description, the method embodiments are described as a series of operational combinations, but those skilled in the art will recognize that the invention is not limited by the order of operation, as some steps may occur in other orders or concurrently in accordance with the invention. Furthermore, those skilled in the art will appreciate that the embodiments described in this specification are presently preferred and that the operating and experimental conditions involved are not necessarily essential to the invention.
The pressure relief method of the split type czochralski crystal growing furnace provided by the invention is described in detail, the principle and the implementation mode of the invention are explained by applying specific examples, and the description of the examples is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (9)
1. A pressure relief method for a split type Czochralski crystal growing furnace is characterized by comprising the following steps:
the pressure relief door is buckled and locked with the main furnace cavity through a connecting piece, the pressure relief door is installed on the main furnace cavity of the split type czochralski crystal growing furnace and can be opened movably, and the pressure relief door is buckled and locked with the main furnace cavity through the connecting piece to form the complete and sealed split type czochralski crystal growing furnace;
the split type czochralski crystal growing furnace is used for preparing single crystals by a czochralski method;
when explosion happens in the split type Czochralski single crystal furnace, the pressure in the main furnace cavity is increased, the pressure relief door is opened outwards under the action of pressure, and high-temperature gas flows out, so that the pressure in the main furnace cavity is reduced rapidly.
2. The split czochralski crystal growing furnace pressure relief method according to claim 1, wherein the inner surface area of the pressure relief door accounts for 1-50% of the total area of the main furnace cavity.
3. The split czochralski crystal growing furnace pressure relief method according to claim 1, wherein the inner surface area of the pressure relief door accounts for 40-50% of the total area of the main furnace cavity.
4. The pressure relief method for the split czochralski crystal growing furnace according to claim 1, wherein the pressure relief door is installed at a position close to the crucible in the split czochralski crystal growing furnace.
5. The split czochralski crystal growing furnace pressure relief method according to claim 1, wherein the pressure relief door is opened outwards under the action of pressure, and high-temperature gas flows out, and the method comprises the following steps:
the pressure relief door is opened outwards under the action of pressure, and the high-temperature gas flows out along the direction guided by the pressure relief protection baffle, so that the high-temperature gas is prevented from rapidly diffusing to a manual operation area;
the pressure relief protection baffle is L-shaped and is installed on the pressure relief door opening side of the main furnace cavity, and the pressure relief protection baffle separates the pressure relief area in front of the pressure relief door from the manual operation area.
6. The pressure relief method of the split type czochralski crystal growing furnace according to claim 1, wherein the pressure relief door is fastened and locked with the main furnace cavity through a connecting piece, and the method comprises the following steps:
the pressure relief door is tightly buckled along a sealing ring, the pressure relief door and the main furnace cavity are locked through the connecting piece, and the sealing ring is arranged at the door frame of the pressure relief door and used for plugging a gap between the pressure relief door and the main furnace cavity, so that the split type direct-pulling single crystal furnace has good air tightness.
7. The pressure relief method for the split czochralski crystal growing furnace of claim 6, wherein the pressure relief door is locked with the main furnace cavity through the connecting piece, and the method comprises the following steps:
the pressure relief door is locked with the main furnace cavity in a buckled mode through the lock catch, the connecting piece comprises a hinge and a lock catch, the hinge is installed on the fixed side of the pressure relief door to enable the pressure relief door to be fixed on the main furnace cavity, and the lock catch is installed on the door opening side of the pressure relief door to enable the pressure relief door to be locked through the lock catch in a buckled mode.
8. The split czochralski crystal growing furnace pressure relief method according to claim 1, further comprising:
after the pressure relief door is buckled, when a pressure sensor arranged in the split type czochralski crystal growing furnace detects that the increasing speed of the pressure in the split type czochralski crystal growing furnace is more than 1000Pa/min under the condition that the pressure in the split type czochralski crystal growing furnace is lower than 10000Pa, an alarm for abnormal door closing is sent, and the preparation of single crystals by the czochralski method is stopped.
9. The pressure relief method for the split czochralski crystal growing furnace according to claim 1, wherein the material and the thickness of the pressure relief door are consistent with those of the main furnace cavity.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101824656A (en) * | 2010-04-29 | 2010-09-08 | 杭州富通半导体设备科技有限公司 | Vice furnace door-opening type single crystal furnace |
| CN201666397U (en) * | 2009-05-18 | 2010-12-08 | 晶科能源有限公司 | Safety relief valve used for single crystal furnace |
| CN203051869U (en) * | 2012-12-27 | 2013-07-10 | 上海汉虹精密机械有限公司 | Safety valve of sapphire single crystal growing furnace |
| CN205244415U (en) * | 2015-12-10 | 2016-05-18 | 韩华新能源科技有限公司 | Automatic relief valve of polycrystal ingot furnace |
| CN208517573U (en) * | 2018-06-19 | 2019-02-19 | 山西潞安太阳能科技有限责任公司 | A kind of explosion-proof gas bleeder valve for single crystal growing furnace |
| CN209702911U (en) * | 2019-01-31 | 2019-11-29 | 常州市乐萌压力容器有限公司 | A kind of self-relieving single crystal growing furnace bell of energy |
-
2022
- 2022-05-25 CN CN202210577422.XA patent/CN115094510B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201666397U (en) * | 2009-05-18 | 2010-12-08 | 晶科能源有限公司 | Safety relief valve used for single crystal furnace |
| CN101824656A (en) * | 2010-04-29 | 2010-09-08 | 杭州富通半导体设备科技有限公司 | Vice furnace door-opening type single crystal furnace |
| CN203051869U (en) * | 2012-12-27 | 2013-07-10 | 上海汉虹精密机械有限公司 | Safety valve of sapphire single crystal growing furnace |
| CN205244415U (en) * | 2015-12-10 | 2016-05-18 | 韩华新能源科技有限公司 | Automatic relief valve of polycrystal ingot furnace |
| CN208517573U (en) * | 2018-06-19 | 2019-02-19 | 山西潞安太阳能科技有限责任公司 | A kind of explosion-proof gas bleeder valve for single crystal growing furnace |
| CN209702911U (en) * | 2019-01-31 | 2019-11-29 | 常州市乐萌压力容器有限公司 | A kind of self-relieving single crystal growing furnace bell of energy |
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| CN115094510B (en) | 2024-04-09 |
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Effective date of registration: 20240621 Address after: No. 15, Jinghong Road, Xibei Town, Xishan District, Wuxi City, Jiangsu Province, 214000 Patentee after: Lianke Semiconductor Co.,Ltd. Country or region after: China Address before: 214000 No. 15, Xibei Jinghong Road, Xishan District, Wuxi City, Jiangsu Province Patentee before: Liancheng keix Technology Co.,Ltd. Country or region before: China |