CN115094510B - Pressure relief method for split type Czochralski single crystal furnace - Google Patents
Pressure relief method for split type Czochralski single crystal furnace Download PDFInfo
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- CN115094510B CN115094510B CN202210577422.XA CN202210577422A CN115094510B CN 115094510 B CN115094510 B CN 115094510B CN 202210577422 A CN202210577422 A CN 202210577422A CN 115094510 B CN115094510 B CN 115094510B
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- 230000000694 effects Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 5
- 230000005856 abnormality Effects 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 11
- 238000009434 installation Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- 238000002485 combustion reaction Methods 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
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- 206010053615 Thermal burn Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a pressure relief method of a split type Czochralski single crystal furnace, and belongs to the technical field of photovoltaics. The method provided by the invention comprises the following steps: firstly, the pressure release door is buckled and locked with the main furnace cavity by using a connecting piece; the pressure release door is arranged on a main furnace chamber body of the split type vertical pulling single crystal furnace, and is buckled and locked with the main furnace chamber body through a connecting piece to form a complete and sealed split type vertical pulling single crystal furnace; then, carrying out a Czochralski method to prepare a single crystal by a split Czochralski single crystal furnace; and then, when explosion occurs in the split type Czochralski single crystal furnace, the pressure in the main furnace chamber is increased, the pressure release door is opened outwards under the action of the pressure, and high-temperature gas flows out, so that the pressure in the main furnace chamber is rapidly reduced. According to the invention, the integral straight pulling single crystal furnace chamber is changed into the split straight pulling single crystal furnace chamber formed by the pressure relief door and the main furnace chamber body, when the furnace body explodes, the pressure relief door can be opened rapidly for pressure relief, so that the problems that the furnace cover is separated from the furnace body, high-temperature air flow in the furnace escapes, and casualties are caused are avoided.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a pressure relief method of a split type Czochralski single crystal furnace.
Background
Currently, in the photovoltaic industry, the monocrystalline silicon industry develops rapidly. Monocrystalline silicon is an important component of crystalline materials, is at the front of new material development, and is commonly used for preparing silicon wafers in the photovoltaic and semiconductor industries. The preparation of the silicon wafer firstly needs to realize the transformation from polycrystalline silicon to monocrystalline silicon, mainly comprises the process of transforming polycrystalline silicon from solid state to molten state by heating and transforming the molten state silicon into monocrystalline silicon solid state by recrystallization. The main manufacturing equipment comprises: the Czochralski single crystal furnace provides a foundation for the rapid expansion of the productivity of the photovoltaic industry. However, since industry development is extremely rapid, measures related to security risk prevention are relatively lacking, and casualties caused by explosion of the Czochralski single crystal furnace are endlessly layered every year.
In the existing Czochralski single crystal furnace structure, an explosion-proof device is usually arranged, but the explosion-proof effect is generally poor, the pressure relief and explosion-proof purposes cannot be completely achieved, and in actual production, the case of furnace body explosion is still quite large. When the furnace body explodes, the pressure in the furnace body increases sharply, which can lead to the rapid detachment of the furnace cover and the furnace body, and a large amount of high-temperature substances explode out of the furnace body at an extremely high speed, thereby causing casualties.
Therefore, development of a split type pressure relief method for a Czochralski single crystal furnace is very necessary in the technical field of photovoltaic and semiconductor silicon wafer production, so as to solve the problem of serious casualties caused by furnace body explosion in the process of preparing the single crystal silicon by the Czochralski method.
Disclosure of Invention
The invention mainly aims to provide a pressure relief method of a split type Czochralski single crystal furnace, which aims to solve the problem of serious casualties caused by explosion of a furnace body in the process of preparing monocrystalline silicon by the Czochralski method.
The invention is realized by the following technical scheme:
the first aspect of the embodiment of the invention discloses a split type pressure relief method for a Czochralski single crystal furnace, which comprises the following steps:
the pressure release door is buckled and locked with the main furnace cavity through a connecting piece, and is arranged on the main furnace cavity of the split type vertical pulling single crystal furnace and can be movably opened, and the split type vertical pulling single crystal furnace which is complete and sealed is formed after the pressure release door is buckled and locked with the main furnace cavity through the connecting piece;
the split Czochralski single crystal furnace is used for preparing single crystals by Czochralski method;
when explosion occurs in the split type czochralski single crystal growing furnace, the pressure in the main furnace chamber is increased, the pressure release door is opened outwards under the pressure action, and high-temperature gas flows out, so that the pressure in the main furnace chamber is rapidly reduced.
Preferably, the inner surface area of the pressure release door accounts for 1-50% of the total area of the main furnace cavity.
Preferably, the inner surface area of the pressure release door accounts for 40-50% of the total area of the main furnace chamber.
Preferably, the installation position of the pressure release door is close to the installation position of the crucible in the split type czochralski crystal growing furnace.
Preferably, the pressure release door is opened outwards under the action of pressure, and high-temperature gas flows out, and the pressure release door comprises:
the pressure release door is opened outwards under the pressure action, and the high-temperature gas flows out along the direction guided by the pressure release protective baffle plate, so that the high-temperature gas is prevented from diffusing to a manual operation area rapidly;
the pressure relief protection baffle is L-shaped, is installed on the main furnace chamber body at the side of the pressure relief door opening, and separates a pressure relief area in front of the pressure relief door from the manual operation area.
Preferably, the pressure release door is fastened and locked with the main furnace cavity through the connecting piece, and the pressure release door comprises:
the sealing ring is tightly buckled with the pressure release door, the pressure release door is tightly locked with the main furnace cavity through the connecting piece, and the sealing ring is arranged at the door frame of the pressure release door and is used for sealing a gap between the pressure release door and the main furnace cavity, so that the split type straight pulling single crystal furnace has good air tightness.
Preferably, the pressure release door is locked with the main oven cavity through the connecting piece, and the pressure release door comprises:
the pressure release door is locked with the main furnace cavity in a buckled mode through the lock catch, the connecting piece comprises a hinge and the lock catch, the hinge is installed on the fixed side of the pressure release door, the pressure release door is fixed on the main furnace cavity, and the lock catch is installed on the opening side of the pressure release door, so that the pressure release door is locked through the lock catch in a buckled mode.
Preferably, the method further comprises:
after the pressure release door is buckled, in the state that the pressure in the split type czochralski single crystal furnace is lower than 10000Pa, when a pressure sensor arranged in the split type czochralski single crystal furnace detects that the increasing speed of the pressure in the split type czochralski single crystal furnace is higher than 1000Pa/min, a door closing abnormality alarm is sent, and the czochralski method is stopped to prepare single crystals.
Preferably, the material and thickness of the pressure release door are consistent with those of the main furnace chamber.
The invention provides a pressure relief method of a split type vertical pulling single crystal furnace, which comprises the steps that firstly, a pressure relief door is buckled and locked with a main furnace chamber body by utilizing a connecting piece, the pressure relief door is arranged on the main furnace chamber body of the split type vertical pulling single crystal furnace and can be movably opened, and the integral and sealed split type vertical pulling single crystal furnace is formed after the pressure relief door is buckled and locked with the main furnace chamber body by the connecting piece; then, starting to carry out a Czochralski method to prepare a single crystal by a split Czochralski single crystal furnace; when explosion occurs in the split type Czochralski single crystal furnace, the pressure in the main furnace chamber is increased, the pressure release door is opened outwards under the pressure action, and high-temperature gas flows out, so that the pressure in the main furnace chamber is rapidly reduced. According to the invention, the integral straight-pulling single crystal furnace is changed into the split straight-pulling single crystal furnace composed of the pressure relief door and the main furnace chamber, and when the furnace body explodes, the pressure relief door can be opened for pressure relief, so that the injury to personnel is reduced.
Compared with the prior art, the invention has the following specific beneficial effects:
1) And the explosion-proof effect is improved. According to the invention, the integral straight-pulling single crystal furnace is changed into the split straight-pulling single crystal furnace composed of the pressure release door and the main furnace chamber, and the pressure release door is arranged on the main furnace chamber, so that compared with the existing pressure release explosion-proof device arranged on the exhaust pipe, the pressure release door is closer to an explosion source. Therefore, when explosion occurs, the pressure release door is rapidly opened under the pressure action, so that the pressure in the Czochralski single crystal furnace is rapidly reduced, and the situation that the furnace cover is stressed to be separated from the furnace body is avoided.
2) And controlling the discharging direction of the high-temperature air flow. According to the invention, the pressure release door is arranged, when explosion occurs in the furnace body, the pressure release door is opened outwards under the pressure action, and high-temperature air flow in the furnace body flows out from the opened pressure release door, so that the discharging direction of the high-temperature air flow is controlled, the high-temperature air flow is prevented from flowing out from other gaps or outlets of the furnace body, and surrounding staff are prevented from being injured.
3) The method is simple. The invention only needs to change the furnace body simply, changes the original integral furnace body into a split furnace body which is composed of the pressure release door and the main furnace chamber together, has simple structure and does not need to increase components. For the Czochralski single crystal furnaces of different models of different manufacturers, the scheme can be modified to achieve better explosion-proof effect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of the steps of a pressure relief method for a split type Czochralski single crystal growing furnace provided by an embodiment of the invention;
FIG. 2 is a schematic structural view of a split-type Czochralski single crystal growing furnace provided by the embodiment of the invention;
description of the drawings: a-main furnace chamber, B-pressure relief door, C-connecting piece, D-pressure relief protection baffle.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings in the embodiments of the present invention. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In order to facilitate understanding of the technical solutions proposed in the present invention, related technologies such as the czochralski method and the semiconductor technology will be briefly described herein.
The Czochralski method, also known as the Czochralski method, is a crystal growth method established by Czochralski. The Czochralski method is characterized in that a crucible made of fused quartz is placed in a vacuum-pumping straight-barrel type chamber, polysilicon is filled in the crucible, the chamber is filled with protective atmosphere, the crucible is heated to about 1500 ℃ by graphite resistor, polysilicon filled in the high-purity quartz crucible is melted, then a small seed crystal etched by a chemical method is lowered to be in contact with the polycrystalline melt for fusion, the rotating seed crystal is lowered to be in contact with the silicon melt, silicon atoms in the solution form regular crystals on a solid-liquid interface along with the silicon atom arrangement structure of the seed crystal, and the formed silicon single crystal is obtained after the steps of neck guiding, neck shrinking, shoulder placing, constant diameter control, ending and the like along with the gradual lifting of the seed crystal.
The Czochralski single crystal furnace is an indispensable device in the process of converting polycrystalline silicon into monocrystalline silicon, and in the process of pulling the silicon single crystal by the Czochralski single crystal furnace, the Czochralski single crystal furnace can explode due to various reasons, so that personnel casualties are caused. For example, when heavy production accidents such as silicon leakage and the like occur, the silicon liquid can permeate the inner layer, at the moment, cooling circulating water can enter the furnace to quickly become water vapor under the action of high temperature, the furnace pressure can suddenly increase, and the furnace can change from a vacuum state to a high-pressure state, so that the furnace body is damaged due to explosion. Or, in the high-temperature environment, the ignition point of red phosphorus required by doping is very low, part of red phosphorus serving as a doping agent of the heavily doped phosphorus single crystal is volatilized in a large amount and deposited at furnace walls, pipelines and the like together with other oxides in the doping and drawing processes, after the volatiles are accumulated to a certain degree, the combustion is caused by gas flow or slight friction during cleaning, heat generated by combustion is accumulated in a limited space and cannot be released, and explosion is easily caused.
Based on the above description, the technical solution of the embodiment of the present invention is described as follows.
Detailed description of the preferred embodiments
The embodiment of the invention provides a split type pressure relief method for a Czochralski single crystal growing furnace, and FIG. 1 is a step flow chart of the method, and as shown in FIG. 1, the method comprises the following steps:
the pressure release door is buckled and locked with the main furnace cavity through a connecting piece, and is arranged on the main furnace cavity of the split type vertical pulling single crystal furnace and can be movably opened, and the split type vertical pulling single crystal furnace which is complete and sealed is formed after the pressure release door is buckled and locked with the main furnace cavity through the connecting piece;
the split Czochralski single crystal furnace is used for preparing single crystals by Czochralski method;
when explosion occurs in the split type czochralski single crystal growing furnace, the pressure in the main furnace chamber is increased, the pressure release door is opened outwards under the pressure action, and high-temperature gas flows out, so that the pressure in the main furnace chamber is rapidly reduced.
The structure of the Czochralski single crystal furnace generally comprises an upper furnace chamber and a main furnace chamber body, wherein the bottom of the upper furnace chamber is connected with a furnace cover arranged at the top of the main furnace chamber body, and an electrode and crucible lifting equipment for lifting a crucible in the main furnace chamber body are arranged in the main furnace chamber body. The main furnace chamber is arranged on the base. The top of the upper furnace chamber is provided with a rotary machine head. The Czochralski single crystal furnace forms a low-pressure airtight high-temperature environment in a main furnace chamber, a Czochralski method is carried out to prepare single crystal silicon, and then the prepared single crystal rod is temporarily stored in an upper furnace chamber and is taken out after being cooled. The main furnace chamber of the existing Czochralski single crystal furnace is an integral cylindrical chamber, and if the main furnace chamber needs to be opened, the furnace cover above the main furnace chamber needs to be opened. The split type Czochralski single crystal furnace mentioned in the application is characterized in that an original complete cylindrical cavity is split into two parts, and the split type Czochralski single crystal furnace consists of a pressure relief door and a main furnace cavity, and a complete cylindrical structure is formed only when the pressure relief door is buckled with the main furnace cavity.
The Czochralski crystal growing furnace is generally provided with an explosion-proof pressure relief device, however, the effect of the explosion-proof pressure relief device is not ideal. On the one hand, since the explosion-proof pressure relief device is usually installed on the exhaust pipe of the Czochralski single crystal furnace, compared with the furnace cover, the explosion-proof pressure relief device is far away from an explosion source (main furnace cavity). When explosion occurs in the main furnace cavity, the furnace cover receives the impact force of the explosion before the explosion-proof pressure relief device, and when the explosion-proof pressure relief device does not perform the pressure relief function, the furnace cover is subjected to the pressure action and is separated from the furnace body, so that the high-temperature air flow in the main furnace cavity leaks out from the opened furnace cover and reaches staff beside the furnace body, and casualties are caused; on the other hand, because the area of explosion-proof pressure relief device is too little, in its explosion-proof pressure relief device carries out the pressure release in-process, because the inefficiency of pressure release leads to the effect of pressure release not enough to offset the effect that the pressure that the explosion led to easily for in the pressure release in-process furnace body internal pressure continuously risees, and the bell still is likely to break away from the furnace body because of pressure, or the other parts of furnace body break away from the furnace body because of the too high pressure that bears, makes high temperature air current cause personnel to scald.
In this embodiment, through changing the main furnace chamber body of czochralski single crystal growing furnace into split type, lock pressure release door and main furnace chamber body lock through the connecting piece, form sealed furnace body, compare in the pressure release explosion-proof equipment of current installation on the blast pipe, it is more close to the explosion source. Therefore, when explosion occurs, the pressure in the main furnace chamber is increased, the pressure release door is rapidly opened under the action of the pressure, and high-temperature gas flows out, so that the pressure in the Czochralski single crystal furnace is rapidly reduced, and the situation that the furnace cover is stressed to be separated from the furnace body is avoided. In addition, through the opening direction of design relief door, when can control the explosion and take place, the direction of the high temperature air current that flows from the relief door to avoided the high temperature air current explosion when explosion, diffused to personnel's operation area rapidly, caused the problem of casualties.
In one embodiment, the inner surface area of the pressure relief door is 1-50% of the total area of the main oven cavity.
In one embodiment, the inner surface area of the pressure relief door is 40-50% of the total area of the main oven cavity.
In this embodiment, the pressure relief explosion-proof effect of the pressure relief door is changed by controlling the size (inner surface area) of the pressure relief door. Specifically, the pressure borne by the pressure relief door is proportional to the area, the larger the pressure relief door occupies the surface area of the whole main furnace cavity, the larger the pressure bearing area is, and the higher the sensitivity to pressure change is, namely, when explosion occurs in the furnace body, the pressure relief door can be opened more rapidly to relieve pressure. In addition, the larger the area of the pressure relief door is, the better the pressure relief effect is, and after the pressure relief door is opened, the pressure in the furnace body is reduced more rapidly. However, the larger the area of the pressure relief door, the greater the design difficulty for the main cavity, and the harder it is to control the direction of the high temperature air flow flowing out of the door when the pressure relief door is opened for pressure relief. In this embodiment, the area of the pressure release door can be controlled within 1-50% of the total area of the main cavity, and further, the pressure release effect is better when the area is within 40-50% of the total area of the main cavity.
In one embodiment, the mounting position of the pressure relief door is proximate to the mounting position of a crucible in the split czochralski crystal growing furnace.
The preparation of monocrystalline silicon mainly comprises the process of converting polycrystalline silicon into a molten state by solid state heating and then converting the molten state silicon into the solid state of monocrystalline silicon by recrystallization. In order to melt the silicon raw material, the heating temperature in the quartz crucible exceeds the melting point of the silicon material and reaches more than 1420 ℃, so that the furnace chamber is in a closed high-temperature environment for a long time. Therefore, the Czochralski single crystal furnace has the highest temperature at the crucible in the main furnace chamber in the process of preparing single crystal silicon by using the Czochralski method, and is the most dominant explosion source. The explosion-proof device of the existing Czochralski single crystal furnace is often arranged on an exhaust pipe or an auxiliary chamber, and a crucible in the main furnace chamber body is a main explosion source, and the explosion-proof device is far away from the explosion source and is relatively close to a furnace cover of the explosion source, so that the explosion-proof device can be acted by pressure firstly when explosion occurs, and is separated from a furnace body. In this embodiment, the closer the installation position of the pressure release door is to the installation position of the crucible, the closer the installation position of the pressure release door is to the position of the explosion source, so that when the explosion occurs in the furnace chamber, the pressure release door can react more rapidly, and after receiving pressure, the pressure release door is opened outwards rapidly to release the pressure.
In one embodiment, the pressure release door is opened outwards under the action of pressure, and the high-temperature gas flows out, including:
the pressure release door is opened outwards under the pressure action, and the high-temperature gas flows out along the direction guided by the pressure release protective baffle plate, so that the high-temperature gas is prevented from diffusing to a manual operation area rapidly;
the pressure relief protection baffle is L-shaped, is installed on the main furnace chamber body at the side of the pressure relief door opening, and separates a pressure relief area in front of the pressure relief door from the manual operation area.
Fig. 2 shows a split type czochralski single crystal growing furnace structure in this embodiment, as shown in fig. 2, a is a main furnace chamber, and is installed between a base and a furnace cover, B is a pressure relief door, C is a connecting piece, the pressure relief door B is installed on the main furnace chamber a through the connecting piece, D is a pressure relief protection baffle, and is installed on the opening side of the pressure relief door B. The split type Czochralski single crystal furnace can be further provided with a pressure relief protective baffle. In this embodiment, pressure release protection baffle can be L type, from this when the relief door is opened, when carrying out the pressure release, pressure release protection baffle can retrain the high-temperature air current that flows in the pressure release region, and the outflow direction of guide high-temperature air current reduces its to manual operation regional diffusion to reduce the possibility that causes personnel to hurt.
In one embodiment, the pressure release door is fastened and locked with the main furnace cavity through a connecting piece, and the pressure release door comprises:
the sealing ring is tightly buckled with the pressure release door, the pressure release door is tightly locked with the main furnace cavity through the connecting piece, and the sealing ring is arranged at the door frame of the pressure release door and is used for sealing a gap between the pressure release door and the main furnace cavity, so that the split type straight pulling single crystal furnace has good air tightness.
In the embodiment, the integral Czochralski single crystal furnace is changed into the split Czochralski single crystal furnace consisting of the pressure relief door and the main furnace chamber, so that a certain gap exists between the pressure relief door and the main furnace chamber, and the air tightness of the Czochralski single crystal furnace is reduced to a certain extent. According to the embodiment, the sealing ring is arranged at the door frame of the pressure relief door, so that the pressure relief door can be tightly buckled along the sealing ring. Specifically, the shape of the sealing ring is determined by the shape of the pressure relief door, and the sealing ring is arranged at the door frame of the pressure relief door, so that gaps between the pressure relief door and the main furnace cavity can be plugged by the sealing ring, the air tightness of the split type czochralski single crystal furnace is ensured, and the influence on the quality of the prepared monocrystalline silicon is avoided.
In one embodiment, locking the pressure relief door with the main oven cavity via the connector comprises:
the pressure release door is locked with the main furnace cavity in a buckled mode through the lock catch, the connecting piece comprises a hinge and the lock catch, the hinge is installed on the fixed side of the pressure release door, the pressure release door is fixed on the main furnace cavity, and the lock catch is installed on the opening side of the pressure release door, so that the pressure release door is locked through the lock catch in a buckled mode.
In this embodiment, the hinge is used to fix the pressure release door on the main oven cavity, so that the pressure release door can be opened actively. In addition, the lock catch is installed to the opposite side of pressure release door, after with pressure release door lock, can lock pressure release door and main furnace cavity through the lock catch, and the lock catch can be further with pressure release door and main furnace cavity lock inseparable, reduces the gap between, improves the gas tightness. When explosion occurs in the furnace chamber, the pressure born by the pressure release door reaches the limit value, the lock catch is damaged, the pressure release door is opened, and high-temperature air flow in the furnace chamber flows out from the door opening side of the pressure release door, so that the pressure in the split type vertical pulling single crystal furnace is reduced, and the damage of other parts due to the high pressure generated by the explosion is avoided, and the parts are separated from the furnace body, so that personnel injury is caused.
In one embodiment, the method further comprises:
after the pressure release door is buckled, in the state that the pressure in the split type czochralski single crystal furnace is lower than 10000Pa, when a pressure sensor arranged in the split type czochralski single crystal furnace detects that the increasing speed of the pressure in the split type czochralski single crystal furnace is higher than 1000Pa/min, a door closing abnormality alarm is sent, and the czochralski method is stopped to prepare single crystals.
After the pressure release door is buckled, before the single crystal silicon is prepared by the Czochralski method, the split-type Czochralski single crystal furnace can be subjected to air tightness inspection, and after the air tightness inspection is qualified, the subsequent preparation of the single crystal silicon is performed. In this embodiment, after the pressure relief door is buckled by arranging the pressure sensor in the split type czochralski crystal growing furnace, under the condition that the pressure in the furnace is lower than 10000Pa, the pressure sensor detects that the pressure in the furnace increases at a speed of more than 1000Pa/min, which means that the pressure relief door is not buckled tightly with the main furnace cavity and a gap still exists, so that a door closing abnormality alarm can be sent to related staff to remind the staff to check the pressure relief door, the locking is performed again until the pressure sensor detects that the pressure in the furnace is normal, and then the next czochralski method is performed to prepare the monocrystalline silicon. The defect of poor air tightness in the split type czochralski crystal growing furnace caused by the fact that the pressure release door is not buckled tightly is avoided, and the quality of the prepared monocrystalline silicon is further affected.
In one embodiment, the material and thickness of the pressure release door are consistent with those of the main furnace chamber.
In this embodiment, the material and thickness of the pressure release door may be the same as those of the main furnace chamber, so that the stability of the split-type czochralski single crystal furnace may be ensured. It is known that different materials have different physical and chemical properties and different stress coefficients, and especially under the high-temperature and high-pressure environment, the deformation degree of the pressure release door and the main furnace cavity after being heated is inconsistent, so that the gap generated between the pressure release door and the main furnace cavity is easy to be enlarged. In addition, the thickness of the pressure relief door can also affect the pressure bearing capacity of the pressure relief door.
The invention provides a split type czochralski single crystal furnace decompression method, which comprises the steps of firstly, buckling and locking a decompression door with a main furnace chamber by using a connecting piece; the pressure release door is arranged on a main furnace chamber body of the split type vertical pulling single crystal furnace, and is buckled and locked with the main furnace chamber body through a connecting piece to form a complete and sealed split type vertical pulling single crystal furnace; then, carrying out a Czochralski method to prepare a single crystal by a split Czochralski single crystal furnace; and then, when explosion occurs in the split type Czochralski single crystal furnace, the pressure in the main furnace chamber is increased, the pressure release door is opened outwards under the action of the pressure, and high-temperature gas flows out, so that the pressure in the main furnace chamber is rapidly reduced. According to the invention, the integral straight-pulling single crystal furnace is changed into the split straight-pulling single crystal furnace composed of the pressure release door and the main furnace chamber, and the pressure release door is arranged on the main furnace chamber, so that compared with the existing pressure release explosion-proof device arranged on the exhaust pipe, the pressure release door is closer to an explosion source. Therefore, when explosion occurs, the pressure release door is rapidly opened under the pressure action, so that the pressure in the Czochralski single crystal furnace is rapidly reduced, and the situation that the furnace cover is stressed to be separated from the furnace body is avoided. And through setting up the relief door, explosion takes place in the furnace body, the relief door receives the pressure effect and opens, and the high temperature air current in the furnace body flows from the relief door department of opening to controlled the play direction of high temperature air current, avoided the high temperature air current to flow from the other gaps of furnace body or export, made the staff on every side receive the injury, promoted the security of czochralski single crystal growing furnace preparation monocrystalline silicon.
For the purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated by one of ordinary skill in the art that the present invention is not limited by the order of acts described, as some acts may, in accordance with the present invention, occur in other orders and concurrently. Further, it should be understood by those skilled in the art that the embodiments described in the specification are all preferred embodiments and that the operation and experimental conditions involved are not necessarily essential to the present invention.
The pressure relief method of the split type Czochralski single crystal growing furnace provided by the invention is described in detail, and specific examples are applied to explain the principle and the implementation mode of the invention, and the description of the examples is only used for helping to understand the method and the core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (7)
1. The pressure release method of the split type Czochralski single crystal growing furnace is characterized by comprising the following steps of:
the pressure release door is buckled and locked with the main furnace cavity through a connecting piece, and is arranged on the main furnace cavity of the split type vertical pulling single crystal furnace and can be movably opened, and the split type vertical pulling single crystal furnace which is complete and sealed is formed after the pressure release door is buckled and locked with the main furnace cavity through the connecting piece;
the split Czochralski single crystal furnace is used for preparing single crystals by Czochralski method;
when explosion occurs in the split type Czochralski single crystal furnace, the pressure in the main furnace chamber is increased, the pressure release door is opened outwards under the pressure action, and high-temperature gas flows out, so that the pressure in the main furnace chamber is rapidly reduced;
wherein, the pressure release door receives the pressure effect to open outwards, and high temperature gas flows out, includes:
the pressure release door is opened outwards under the pressure action, and the high-temperature gas flows out along the direction guided by the pressure release protective baffle plate, so that the high-temperature gas is prevented from diffusing to a manual operation area rapidly; the inner surface area of the pressure relief door accounts for 1-50% of the total area of the main furnace cavity;
the pressure relief protection baffle is L-shaped, is installed on the main furnace chamber body at the side of the pressure relief door opening, and separates a pressure relief area in front of the pressure relief door from the manual operation area.
2. The pressure relief method of the split type czochralski crystal growing furnace of claim 1, wherein the inner surface area of the pressure relief door accounts for 40-50% of the total area of the main furnace chamber.
3. The method of claim 1, wherein the pressure release door is mounted at a position near a position where a crucible in the split czochralski crystal growing furnace is mounted.
4. The method for pressure relief of a split czochralski crystal growing furnace of claim 1, wherein the pressure relief door is fastened and locked with the main furnace chamber body through a connecting piece, comprising:
the sealing ring is tightly buckled with the pressure release door, the pressure release door is tightly locked with the main furnace cavity through the connecting piece, and the sealing ring is arranged at the door frame of the pressure release door and is used for sealing a gap between the pressure release door and the main furnace cavity, so that the split type straight pulling single crystal furnace has good air tightness.
5. The method of claim 4, wherein locking the pressure release door to the main furnace chamber via the connector comprises:
the pressure release door is locked with the main furnace cavity in a buckled mode through the lock catch, the connecting piece comprises a hinge and the lock catch, the hinge is installed on the fixed side of the pressure release door, the pressure release door is fixed on the main furnace cavity, and the lock catch is installed on the opening side of the pressure release door, so that the pressure release door is locked through the lock catch in a buckled mode.
6. The split czochralski crystal growing furnace pressure relief method of claim 1, further comprising:
after the pressure release door is buckled, in the state that the pressure in the split type czochralski single crystal furnace is lower than 10000Pa, when a pressure sensor arranged in the split type czochralski single crystal furnace detects that the increasing speed of the pressure in the split type czochralski single crystal furnace is higher than 1000Pa/min, a door closing abnormality alarm is sent, and the czochralski method is stopped to prepare single crystals.
7. The pressure relief method of the split type czochralski crystal growing furnace of claim 1, wherein the material and the thickness of the pressure relief door are consistent with the material and the thickness of the main furnace chamber.
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| CN201666397U (en) * | 2009-05-18 | 2010-12-08 | 晶科能源有限公司 | Safety relief valve used for single crystal furnace |
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| CN115094510A (en) | 2022-09-23 |
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