TWI732719B - Vacuum method for preventing dust explosion in production of phosphorus-doped monocrystalline silicon and production method of phosphorus-doped monocrystalline silicon using the same - Google Patents

Abstract

The invention discloses a vacuum method for preventing dust explosion in the production of phosphorus-doped single crystal silicon. A single crystal furnace used for the production of phosphorus-doped single crystal silicon includes a main chamber and a sub-chamber which are connected to each other, and the sub-chamber is arranged in the main Above the chamber; the vacuuming method includes the following steps: S1, using a first pipeline to connect the main valve and the main pump to the main chamber in turn, and closing the main valve and the main pump; S2, using a second pipeline to assist The valve and the auxiliary pump are sequentially connected to the auxiliary chamber, and a third pipe is used to connect the quick-fill valve to the main chamber or the auxiliary chamber; the auxiliary valve and the auxiliary pump are opened to extract the air in the single crystal furnace , Controlling the quick filling valve to pass inert gas into the single crystal furnace. Through the above-mentioned vacuuming method, the air content in the furnace can be gradually reduced, and the dust explosion conditions are not met while vacuuming; the present invention also provides a phosphorus-doped monocrystalline silicon production method using the dust-proof vacuuming method. Provides a guarantee for the safe production of phosphorus-doped monocrystalline silicon.

Description

Vacuum method for preventing dust explosion in production of phosphorus-doped monocrystalline silicon and production method of phosphorus-doped monocrystalline silicon using the same

The invention relates to the manufacturing field of semiconductor single crystal silicon, in particular to a dust-proof vacuuming method in the production of phosphorus-doped single crystal silicon and a method for producing phosphorus-doped single crystal silicon using the same.

In the semiconductor industry, with the application and development of integrated circuit technology, the power consumption of power devices is required to be lower and lower, especially the requirement of lower resistivity. In the current study, compared with arsenic and antimony, phosphorus has a greater solid solubility in the silicon lattice, and the resulting phosphorus-doped single crystal silicon has a lower resistivity. The single crystal furnace currently used for the production of single crystal silicon usually includes a sub-chamber and a main chamber set up and down. The quartz crucible for placing the raw material polysilicon and red phosphorus is set in the main chamber; When vacuuming, the gas in the sub-chamber and the main chamber is pumped out through the open main valve and the main pump through the above-mentioned pipeline. Once the production of monocrystalline silicon is started, the pipeline, main valve and main pump will operate continuously for 24 hours to keep the vacuum in the monocrystalline furnace, which leads to a longer period of use, and it is easier to deposit production raw materials in the pipeline. , Phosphorus and oxides. The pipeline set between the main valve and the main pump cannot be cleaned of deposits due to design and other reasons. Although the main chamber, the sub-chamber, and the pipeline between the main chamber and the main valve can be cleaned, it is still There will inevitably be residues. When the phosphorous-doped monocrystalline silicon is reproduced and the main valve is opened for vacuuming, the deposits and residues that cannot be cleaned contain red phosphorous with a low ignition point, and slight friction such as the friction caused by opening the main valve will cause the red phosphorous oxide dust to explode. happened. A dust explosion will pollute up to 130kg of high-purity raw materials, and even damage the quartz crucible, thermal field components and equipment in the single crystal furnace, which not only increases the production and maintenance costs, but also brings great danger to the actual work. .

In view of this, our inventors devoted themselves to further research, and proceeded to develop and improve, hoping to develop a better invention to solve the above problems, and after continuous experimentation and modification, the present invention came out.

In order to solve the dust explosion problem in the single crystal furnace for the production of phosphorus-doped monocrystalline silicon before the production of monocrystalline silicon is started, the invention provides a dust explosion-proof vacuum method in the production of phosphorus-doped monocrystalline silicon and its doping method. Phosphorus monocrystalline silicon production method.

In order to achieve the above objectives, according to one aspect of the present invention, the present invention is achieved through the following technical solutions:

A vacuum method for preventing dust explosion in the production of phosphorus-doped single crystal silicon. A single crystal furnace used for the production of phosphorus-doped single crystal silicon includes a main chamber and an auxiliary chamber that are connected to each other, and the auxiliary chamber is arranged above the main chamber; The vacuum method for preventing dust explosion includes the following steps:

S1. Use a first pipeline to connect the main valve and the main pump to the main chamber in sequence, and close the main valve and the main pump;

S2. A second pipeline is used to connect the auxiliary valve and the auxiliary pump to the auxiliary chamber in sequence, and a third pipeline is used to connect the quick-fill valve to the main chamber or the auxiliary chamber; The air in the single crystal furnace is exhausted, and the quick filling valve is controlled to pass inert gas into the single crystal furnace.

Preferably, step S2 includes:

(1) Set the flow of inert gas;

(2) opening said auxiliary valve and said auxiliary pump crystal furnace through the second air extraction duct, the furnace pressure decreased to close the pilot valve P value of _1;

(3) Open the fast charging valve and pass inert gas into the single crystal furnace through the third pipeline, and close the fast charging valve when the _{furnace pressure rises to the P 2 value.}

Preferably, after repeating steps (2) and (3) for at least three times, the furnace pressure is P ₂ value, while the auxiliary valve, the auxiliary pump and the fast charging valve are kept closed, and then the main valve connected to the main chamber is opened Continue to pump out air with the main pump to maintain the vacuum state in the single crystal furnace.

Preferably, before opening the main valve and the main pump to continue to pump air, it is also necessary to open the butterfly valve provided between the main valve and the main chamber, set the butterfly valve opening to 5%, and open the butterfly valve.

Preferably, the inert gas includes argon, and the inert gas is sent from the inert gas source to the fast filling valve through the third pipeline.

Preferably, an isolation valve is provided between the main chamber and the auxiliary chamber to control the communication or isolation of the main chamber and the auxiliary chamber; in the process of extracting air and introducing inert gas, the isolation valve is opened to make the The main chamber and the auxiliary chamber are connected.

According to another aspect of the present invention, there is provided a production method of phosphorus-doped single crystal silicon to avoid dust explosion. Realized through the following technical solutions:

A production method of phosphorus-doped monocrystalline silicon to avoid dust explosions, including the following steps:

The raw material polycrystalline silicon is put into the main chamber of the single crystal furnace, and the dust-proof vacuum method in the production of phosphorus-doped single crystal silicon is used to form a vacuum in the furnace and inert gas is introduced, and then the raw material is heated to melt it, and then the crystal grows for mixing. Production of phosphorous monocrystalline silicon.

In the present invention, the "main chamber" is the abbreviation of the "main furnace chamber" in the single crystal furnace; the "sub chamber" is the abbreviation of the "auxiliary furnace chamber" in the single crystal furnace.

The invention provides a vacuum method for preventing dust explosion in the production of phosphorus-doped single crystal silicon. In the method, the air in the auxiliary chamber and the main chamber is extracted from the pipe connected to the auxiliary chamber in the single crystal furnace, and the air in the auxiliary chamber and the main chamber is extracted from the single crystal furnace. Inert gas is introduced into the auxiliary chamber or the main chamber. Since the second pipe connected to the auxiliary chamber is used less frequently, and the attachments or deposits in the pipe can be cleaned out by cleaning, when the air is pumped out, a small amount of residue that cannot be completely cleaned can not meet the dust explosion. Conditions without a dust explosion. Moreover, by repeatedly extracting the air in the furnace and introducing inert gas into the furnace, the air content in the furnace can be gradually reduced without meeting the conditions of dust explosion, so that the main valve is opened and the air is continuously drawn to maintain the vacuum in the furnace. No dust explosion problem occurs during the state.

The present invention also provides a method for producing phosphorous-doped monocrystalline silicon using the dust-proof vacuuming method. Because the vacuuming method avoids the occurrence of dust explosions, it also effectively prevents raw materials from being contaminated and equipment from being destroyed without cost. Time to repair equipment or recycle materials. Therefore, the production method of the present invention provides a guarantee for the safe production of phosphorus-doped monocrystalline silicon, reduces production costs while avoiding dust explosions, and avoids the cost problems of replacement of scrapped materials and maintenance of equipment.

Regarding the technical means of our inventors, several preferred embodiments are described in detail below in conjunction with the drawings, in order to provide a thorough understanding and approval of the present invention.

The present invention will be described in detail below in conjunction with embodiments.

The invention provides a vacuum method for preventing dust explosion in the production of phosphorus-doped single crystal silicon. The single crystal furnace used for the production of phosphorus-doped single crystal silicon includes a main chamber and an auxiliary chamber that are connected to each other, wherein the auxiliary chamber is arranged above the main chamber; The vacuuming method for dust explosion prevention of the present invention includes the following steps:

S1. Use the first pipeline to connect the main valve and the main pump to the main chamber in turn, and close the main valve and the main pump;

S2. Use the second pipeline to connect the auxiliary valve and the auxiliary pump to the auxiliary chamber in turn, and use the third pipeline to connect the quick-fill valve to the main chamber or the auxiliary chamber; open the auxiliary valve and the auxiliary pump to extract the air in the single crystal furnace, and Control the quick filling valve to pass inert gas into the single crystal furnace.

The air is gradually extracted from the auxiliary chamber and the main chamber through the second pipe and auxiliary valve connected to the auxiliary chamber to reduce the oxygen content in the single crystal furnace, and inert gas is introduced into the single crystal furnace; The vacuum method creates a vacuum in the single crystal furnace and starts to melt the polycrystalline silicon raw material to grow single crystal silicon under the protection of inert gas. In the vacuuming method of the present invention, the dust explosion of red phosphorus oxide is significantly reduced; the explosion problem caused by red phosphorus attachments or deposits in the main chamber, the auxiliary chamber, or the first pipe and the second pipe is effectively avoided.

The above step S2 includes:

(1) Set the flow of inert gas;

(2) opens the auxiliary valve and said auxiliary pump through the second single-crystal furnace air extraction duct, the furnace pressure decreased to close the secondary valve when the value of P _1;

(3) Open the fast-fill valve and pass inert gas into the single crystal furnace through the third pipe, and close the fast-fill valve when the _{furnace pressure rises to the P 2 value.}

_{When vacuuming the production of phosphorous-doped single crystal silicon, the furnace pressure P 1} value and P ₂ value of steps (2) and (3) can be adjusted appropriately according to the actual single crystal furnace conditions and the single crystal silicon to be produced. And the _{value of P 2} is greater than the value of P ₁ .

After repeating steps (2) and (3) for at least three times, the furnace pressure is P ₂ value, while the auxiliary valve, auxiliary pump and fast charging valve are kept closed, and then the main valve and main pump connected to the main chamber are opened to continue pumping The air maintains the vacuum state in the single crystal furnace.

In the process of producing phosphorous-doped monocrystalline silicon, the second pipeline connected to the auxiliary chamber is used less frequently, and the attachments or deposits in the pipeline can be cleaned out by cleaning. When gas is extracted through the second pipeline, a small amount of Residues that cannot be completely cleaned up cannot meet the conditions of a dust explosion without a dust explosion.

After opening the auxiliary valve to extract air, open the fast filling valve connected to the main chamber or the auxiliary chamber of the single crystal furnace, and pass inert gas into the single crystal furnace to quickly replace the air in the furnace. The fast filling valve can also be connected to the communication between the main chamber and the auxiliary chamber of the single crystal furnace, and inert gas is introduced from the communication place between the main chamber and the auxiliary chamber. By controlling the fast filling valve, the inert gas gradually flows into the main chamber and the sub-chamber from the third pipe connected to the inert gas source.

Before opening the main valve and the main pump to continue to pump air, the butterfly valve provided between the main valve and the main chamber also needs to be opened, and the butterfly valve is opened after setting the opening degree of the butterfly valve to 5%. Then, the main valve and the main pump are opened to continue vacuuming, so that the main chamber and the sub-chamber form a vacuum before heating to produce monocrystalline silicon, and continue to maintain a vacuum state after monocrystalline silicon is produced. At this time, although the attachments in the pipeline between the main pump and the main valve cannot be cleaned out, the single crystal furnace is already in a vacuum with low oxygen content, which cannot meet the conditions of dust explosion and avoid dust explosion. happened. In addition, the butterfly valve is mainly used to automatically adjust the furnace pressure during the production of monocrystalline silicon. At this time, the butterfly valve opening is set to 5% to prevent excessive air friction and further prevent dust explosion.

The inert gas includes argon, and the inert gas is sent from the inert gas source to the fast filling valve through the third pipeline.

The main pump is a water pump.

An isolation valve is arranged between the main chamber and the auxiliary chamber to control the communication or isolation between the main chamber and the auxiliary chamber; in the process of extracting air and introducing inert gas, the isolation valve is opened to communicate between the main chamber and the auxiliary chamber.

The present invention also provides a production method of phosphorus-doped monocrystalline silicon to avoid dust explosion, which includes the following steps:

The raw material polycrystalline silicon is put into the main chamber of the single crystal furnace, and the dust-proof vacuum method in the production of phosphorus-doped single crystal silicon is used to form a vacuum in the furnace and inert gas is introduced, and then the raw material is heated to melt it, and then the crystal grows for mixing. Production of phosphorous monocrystalline silicon.

Example 1

The single crystal furnace used to produce phosphorous-doped single crystal silicon includes a main chamber and a sub-chamber that are connected, and the sub-chamber is arranged above the main chamber. An isolation valve is set between the sub-chamber and the main chamber to control the communication or Isolation; the main valve and the main pump are connected to the main chamber through the first pipeline, the auxiliary valve and the auxiliary pump are connected to the auxiliary chamber through the second pipeline, and the inert gas source and the fast filling valve are connected to the main chamber through the third pipeline. room. Put the raw material polysilicon into the quartz crucible in the main chamber, and start preparing to pump the air in the single crystal furnace.

The isolation valve provided between the main chamber and the auxiliary chamber is opened to keep the main chamber and the auxiliary chamber in communication. A small amount of argon is filled into the single crystal furnace through the charging valve connected to the single crystal furnace, the explosion-proof valve on the single crystal furnace is opened to exhaust the dry powder, the moisture in the furnace is replaced, and then the argon gas and the explosion-proof valve are closed. Close the main valve and the main pump, open the auxiliary valve and the auxiliary pump, and start to extract air from the auxiliary chamber through the second pipe, and gradually extract the air in the auxiliary chamber and the main chamber under the action of the auxiliary pump. At the same time, open the fast filling valve, and gradually introduce argon into the sub-chamber and main chamber of the single crystal furnace. According to the condition of the single crystal furnace and the corresponding production situation, set the argon flow value, the furnace pressure after the air is extracted, the furnace pressure after the inert gas is introduced, and the vacuum in the single crystal furnace; in this embodiment, the argon flow is set to 50 slpm , Open the auxiliary valve, use the auxiliary pump to extract the air in the furnace, close the auxiliary valve and the auxiliary pump when the pressure in the furnace drops to 200 Torr; open the fast filling valve to pass argon into the single crystal furnace, and increase the pressure in the furnace Close the fast-fill valve when it reaches 400 Torr. Once again, open the auxiliary valve and auxiliary pump to extract air to reduce the pressure in the furnace to 200 Torr and then close it; open the fast filling valve and ventilate argon to increase the pressure in the furnace to 400 Torr and then close it, and continue to repeat the above two steps. After completing three repeated loops of air extraction and argon introduction to stabilize the furnace pressure to 400 Torr, close the auxiliary valve and the auxiliary pump. Open the main valve and the main pump, and set the opening degree of the butterfly valve between the main valve and the main chamber to 5%, and continue to complete the vacuuming to form and maintain a vacuum state in the single crystal furnace.

After the vacuum is completed, start to heat and melt the raw materials to form a silicon melt, first close the isolation valve to make the main chamber and the auxiliary chamber into an isolated state, dope the red phosphorus in the gas phase into the silicon melt in the main chamber, and remove the seed The crystal is inserted into the surface of the silicon melt for welding, followed by seeding, shoulder setting, shoulder turning, equal diameter growth and finishing to obtain phosphorus-doped single crystal silicon. In the above process, the occurrence of dust explosion is avoided, and the single crystal production can be continued smoothly.

Example 2

The setup of the single crystal furnace for producing phosphorous-doped single crystal silicon is the same as that of Example 1. Put the raw material polysilicon into the quartz crucible in the main chamber, and start preparing to pump the air in the single crystal furnace. Open the isolation valve to keep the main chamber and the auxiliary chamber in communication. A small amount of argon is filled into the single crystal furnace through the charging valve connected to the single crystal furnace, the explosion-proof valve on the single crystal furnace is opened to exhaust the dry powder, the moisture in the furnace is replaced, and then the argon gas and the explosion-proof valve are closed. Close the main valve and the main pump, open the auxiliary valve and the auxiliary pump, and start to extract air from the auxiliary chamber through the second pipe, and gradually extract the air in the auxiliary chamber and the main chamber under the action of the auxiliary pump. At the same time, open the fast filling valve, and gradually introduce argon into the sub-chamber and main chamber of the single crystal furnace. According to the conditions of the single crystal furnace and the corresponding production situation, set the argon flow value, the furnace pressure after the air is extracted, the furnace pressure after the inert gas is introduced, and the vacuum in the single crystal furnace; in this embodiment, the argon flow is set to 60 slpm , Open the auxiliary valve, use the auxiliary pump to extract the air in the furnace, close the auxiliary valve and the auxiliary pump when the pressure in the furnace drops to 300 Torr; open the fast filling valve to pass argon into the single crystal furnace and increase the pressure in the furnace Close the fast-fill valve when it reaches 600 Torr. Once again, open the auxiliary valve and the auxiliary pump to extract air to reduce the pressure in the furnace to 300 Torr and then close it; open the fast filling valve and ventilate argon to increase the pressure in the furnace to 600 Torr and then close it, and continue to repeat the above two steps twice. . After completing four repeated loop operations of air extraction and argon gas introduction to stabilize the furnace pressure to 600 Torr, close the auxiliary valve and the auxiliary pump. Open the main valve and the main pump, and set the opening degree of the butterfly valve between the main valve and the main chamber to 5%, and continue to complete the vacuuming to form and maintain a vacuum state in the single crystal furnace.

After the vacuum is completed, start to heat and melt the raw materials to form a silicon melt, first close the isolation valve to make the main chamber and the auxiliary chamber into an isolated state, dope the red phosphorus in the gas phase into the silicon melt in the main chamber, and remove the seed The crystal is inserted into the surface of the silicon melt for welding, followed by seeding, shoulder setting, shoulder turning, equal diameter growth and finishing to obtain phosphorus-doped single crystal silicon.

Example 3

The setup of the single crystal furnace for producing phosphorous-doped single crystal silicon is the same as that of the first embodiment. Put the raw material polysilicon into the quartz crucible in the main chamber, and start preparing to pump the air in the single crystal furnace. Open the isolation valve to keep the main chamber and the auxiliary chamber in communication. A small amount of argon is filled into the single crystal furnace through the charging valve connected to the single crystal furnace, the explosion-proof valve on the single crystal furnace is opened to exhaust the dry powder, the moisture in the furnace is replaced, and then the argon gas and the explosion-proof valve are closed. Close the main valve and the main pump, open the auxiliary valve and the auxiliary pump, and start to extract air from the auxiliary chamber through the second pipe, and gradually extract the air in the auxiliary chamber and the main chamber under the action of the auxiliary pump. At the same time, open the fast filling valve, and gradually introduce argon into the sub-chamber and main chamber of the single crystal furnace. According to the conditions of the single crystal furnace and the corresponding production conditions, set the argon flow value, the furnace pressure after the air is extracted, the furnace pressure after the inert gas is introduced, and the vacuum in the single crystal furnace; in this embodiment, the argon flow is set to 55 slpm , Open the auxiliary valve, use the auxiliary pump to extract the air in the furnace, close the auxiliary valve and the auxiliary pump when the pressure in the furnace drops to 250 Torr; open the fast filling valve to pass argon into the single crystal furnace, and increase the pressure in the furnace Close the fast-fill valve when it reaches 550 Torr. Once again, open the auxiliary valve and the auxiliary pump to extract air to reduce the pressure in the furnace to 250 Torr and then close it; open the fast filling valve and ventilate argon to increase the pressure in the furnace to 550 Torr and then close it, and continue to repeat the above two steps twice. . After completing four repeated loops of air extraction and argon introduction to stabilize the furnace pressure to 550 Torr, close the auxiliary valve and the auxiliary pump. Open the main valve and the main pump, and set the opening degree of the butterfly valve between the main valve and the main chamber to 5%, and continue to complete the vacuum to form and maintain a vacuum state in the single crystal furnace.

After the vacuum is completed, start to heat and melt the raw materials to form a silicon melt, first close the isolation valve to make the main chamber and the auxiliary chamber into an isolated state, dope the red phosphorus in the gas phase into the silicon melt in the main chamber, and remove the seed The crystal is inserted into the surface of the silicon melt for welding, followed by seeding, shoulder setting, shoulder turning, equal diameter growth and finishing to obtain phosphorus-doped single crystal silicon.

Comparative example 1

The raw material polycrystalline silicon is added to the quartz crucible in the main chamber of the single crystal furnace, and the isolation valve arranged between the main chamber and the auxiliary chamber is opened to keep the main chamber and the auxiliary chamber in a connected state. The main ball valve and the main pump are connected to the main chamber through pipelines. The main pump adopts a water pump. The main valve is opened and the air in the single crystal furnace is drawn out through the action of the main pump. A fast filling valve is connected to the main chamber of the single crystal furnace through a pipeline, and argon gas is introduced into the single crystal furnace through the opening of the fast filling valve. After the vacuum is completed, start to heat and melt the raw materials to form a silicon melt, first close the isolation valve to make the main chamber and the auxiliary chamber into an isolated state, dope the red phosphorus in the gas phase into the silicon melt in the main chamber, and remove the seed The crystal is inserted into the surface of the silicon melt for welding to grow crystals.

The methods in the above-mentioned Examples 1 to 3 and Comparative Example 1 are all produced by operating a single crystal furnace to produce phosphorus-doped single crystal silicon and applying the vacuuming method of the present invention. The comparison results obtained are shown in Table 1. During the above-mentioned production, the number of productions corresponding to the test time indicates the number of times that a single crystal furnace has completed the same amount of raw material to produce phosphorus-doped single crystal silicon within that time, and it also represents the number of times that the single crystal furnace has been in this time. The number of times of vacuuming inside, and the single crystal furnace is opened for cleaning before each production.

[Table I] Implementation of the project testing time Corresponding to the number of productions within the test time Number of dust bursts Example 1 6 months 15 times 0 Example 2 12 months 28 times 0 Example 3 6 months 15 times 0 Comparative example 1 6 months 9 times 6 times

From the comparison between Comparative Example 1 and Example 1, it can be seen that the traditional methods will not only cause dust explosions, but also cause raw materials to be contaminated and equipment destroyed. It takes more time to repair equipment and recycle raw materials, so the number of productions in the same time is also reduced, which not only takes more time but also increases costs. Therefore, it can be seen from the comparison results of the foregoing Examples 1 to 3 and Comparative Example 1 that the dust explosion-proof vacuum method of the present invention does not cause dust explosion problems during the production of phosphorus-doped single crystal silicon. The vacuum method for preventing dust explosion in the invention can ensure that no dust explosion occurs in each production. This also enables the phosphorus-doped monocrystalline silicon production method using the dust-proof vacuum method to ensure production safety while avoiding the scrap and damage of raw materials and equipment parts, which is beneficial to reducing production costs.

The embodiments of the present invention are only used to illustrate the present invention, and do not constitute a limitation on the scope of the patent application. Other substantially equivalent alternatives that can be thought of by those with ordinary knowledge in the technical field to which the present invention belongs are all within the protection scope of the present invention. Inside.

In summary, the technical means disclosed in the present invention can effectively solve the conventional problems and achieve the expected purpose and effect. It has not been seen in the publications, has not been used publicly, and has long-term progress before the application. The patent law claims that the invention is correct. Yan filed an application in accordance with the law and prayed that Jun Shanghui would give a detailed examination and grant a patent for invention.

However, the above are only a few preferred embodiments of the present invention, and should not be used to limit the scope of implementation of the present invention, that is, all equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the description of the invention are all It should still fall within the scope of the patent for this invention.

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Claims (7)

A vacuum method for preventing dust explosion in the production of phosphorus-doped single crystal silicon, characterized in that, a single crystal furnace for producing phosphorus-doped single crystal silicon includes a main chamber and a sub-chamber communicating with each other, and the sub-chamber is arranged in the main Above the chamber; the vacuum method for preventing dust explosion includes the following steps: S1. Use a first pipeline to connect the main valve and the main pump to the main chamber in sequence, and close the main valve and the main pump; S2. A second pipeline is used to connect the auxiliary valve and the auxiliary pump to the auxiliary chamber in sequence, and a third pipeline is used to connect the quick-fill valve to the main chamber or the auxiliary chamber; The air in the single crystal furnace is exhausted, and the quick filling valve is controlled to pass inert gas into the single crystal furnace. The vacuum method for preventing dust explosion in the production of phosphorus-doped monocrystalline silicon as described in claim 1, characterized in that step S2 includes: (1) setting the flow of inert gas; (2) opening the auxiliary valve and the auxiliary pump The air in the single crystal furnace is drawn out through the second pipe, and _{the auxiliary valve is closed when the furnace pressure drops to the value of P 1} ; (3) The fast charging valve is opened and the single crystal is directed to the single crystal through the third pipe. Inert gas is introduced into the furnace, and the quick-fill valve is closed when the _{furnace pressure rises to the P 2 value.} The vacuum method for preventing dust explosion in the production of phosphorus-doped monocrystalline silicon as described in claim 2, wherein, after steps (2) and (3) are repeated in sequence for at least three times, the furnace pressure is P ₂ value, and the auxiliary valve , The auxiliary pump and the fast filling valve are kept closed, and then the main valve and the main pump connected to the main chamber are opened to continue to pump out air to maintain the vacuum state in the single crystal furnace. The vacuum method for preventing dust explosion in the production of phosphorus-doped monocrystalline silicon as described in claim 3, wherein, before opening the main valve and the main pump to continue to pump out air, the butterfly valve provided between the main valve and the main chamber also needs to be opened , Set the butterfly valve opening to 5% and open the butterfly valve. The vacuum method for preventing dust explosion in the production of phosphorus-doped single crystal silicon according to any one of claims 1 to 3, wherein the inert gas includes argon, and the inert gas is sent from the inert gas source to the The fast filling valve. The vacuum method for preventing dust explosion in the production of phosphorus-doped single crystal silicon according to any one of claims 1 to 4, wherein an isolation valve is provided between the main chamber and the auxiliary chamber to control the main chamber and The communication or isolation of the auxiliary chamber; in the process of extracting air and introducing inert gas, the isolation valve is opened to make the communication between the main chamber and the auxiliary chamber. A production method of phosphorus-doped monocrystalline silicon to avoid dust explosion, which is characterized in that it comprises the following steps: The raw material polycrystalline silicon is added to the main chamber of the single crystal furnace, and a vacuum is formed in the furnace and the inert gas is passed through the dust-proof vacuum method in the production of phosphorus-doped single crystal silicon as described in any one of Claims 1 to 6. After heating the raw material to melt it, the crystal will start to grow for the production of phosphorus-doped single crystal silicon.