CN203834050U - Single crystal furnace thermal field graphite electrode and single crystal furnace - Google Patents
Single crystal furnace thermal field graphite electrode and single crystal furnace Download PDFInfo
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- CN203834050U CN203834050U CN201420256095.9U CN201420256095U CN203834050U CN 203834050 U CN203834050 U CN 203834050U CN 201420256095 U CN201420256095 U CN 201420256095U CN 203834050 U CN203834050 U CN 203834050U
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- single crystal
- graphite electrodes
- graphite
- crystal furnace
- thermal field
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Abstract
The utility model discloses a single crystal furnace thermal field graphite electrode and a single crystal furnace, wherein the single crystal furnace thermal field graphite electrode comprises a graphite electrode body, a raised silicon solution shielding portion (6) is arranged on the outer circumference of the upper portion of the graphite electrode body in the radial direction, and is provided with a silicon solution diversion oblique plane (7) which downwardly inclines, the raised silicon solution shielding portion (6) is of a frustum shape, the diameter of the frustum bottom of the raised silicon solution shielding portion (6) is bigger than the diameter of the graphite electrode body, and the silicon solution diversion oblique plane (7) is formed on a conical surface of the raised silicon solution shielding portion (6). After graphite electrodes have a silicon leakage accident, the single crystal furnace thermal field graphite electrode can prevent silicon liquid from flowing onto a furnace bottom pressing plate, thereby protecting a furnace bottom of the single crystal furnace, prevents explosion accidents from happening, and guarantees the single crystal furnace to safely run. The utility model further discloses a single crystal furnace provide with the graphite electrode.
Description
Technical field
The utility model relates to the thermal field Graphite Electrodes of silicon single crystal processing and manufacturing technical field, particularly single crystal growing furnace.The utility model also relates to the single crystal growing furnace that is provided with described Graphite Electrodes.
Background technology
Single crystal growing furnace is in inert gas environment, adopts graphite resistance heater, silicon materials is melted, and adopt the equipment of Grown by CZ Method dislocation-free monocrystalline.
Please refer to Fig. 1, Fig. 1 is the structural representation of a kind of single crystal growing furnace in prior art.
Single crystal growing furnace is general main by quartz crucible 1, graphite crucible 2, well heater 3, Graphite Electrodes 4 parts such as grade form, wherein, the material of quartz crucible 1 is silicon-dioxide, be used for holding silicon material, graphite crucible 2 is one of important component parts of thermal field of single crystal furnace, at the state lower support quartz crucible 1 of high temperature, and play protection quartz crucible 1 effect, well heater 3 is heat generating components, it is fastened on Graphite Electrodes 4 by well heater pin and Graphite Electrodes 4, Graphite Electrodes 4 is the parts that connect single crystal growing furnace copper electrode and well heater pin, be divided into main electrode and supporting electrode, the effect of main electrode is conduction, the effect of supporting electrode is to support well heater.
The drop-bottom 5 of single crystal growing furnace adopts stainless steel, and is provided with Double water-cooled structure, is positioned at the below of the thermal field of single crystal furnace lowest layer.
Single crystal growing furnace is hot environment in stove in the time of operation, can make a part of silicon vaporization, causes graphite crucible 2 and silicon vapor generation chemical reaction in thermal field, and after long-time use, the intensity of graphite crucible 2 can reduce, and may rupture.
After 2 fractures of graphite crucible, can cause the quartz crucible 1 of graphite crucible 2 inside to break, silicon liquid flows out from quartz crucible 1, flows down along graphite crucible 2 breaking parts, and silicon leakage accident occurs.Because Graphite Electrodes 4 is positioned under graphite crucible 2, silicon liquid can flow on Graphite Electrodes 4 from graphite crucible 2, finally may flow on the drop-bottom 5 of Graphite Electrodes 4 bottoms, when serious, may damage drop-bottom 5.If drop-bottom 5 is damaged by the silicon liquid of high temperature, its inner water coolant can overflow, and the water coolant overflowing is at high temperature vaporized, and causes the increase severely accident of blasting of furnace pressure.
Therefore, how preventing that single crystal growing furnace from damaging drop-bottom because silicon leaks, is those skilled in the art's technical issues that need to address.
Utility model content
The first object of the present utility model is to provide a kind of thermal field of single crystal furnace Graphite Electrodes.This Graphite Electrodes leaks after silicon accident in generation, can prevent that silicon liquid from flowing on furnace bottom compressing tablet, thereby protect single crystal growing furnace furnace bottom, has prevented the generation of explosion hazard.
The second object of the present utility model is to provide a kind of single crystal growing furnace that is provided with described Graphite Electrodes.
For realizing above-mentioned the first object, the utility model provides a kind of thermal field of single crystal furnace Graphite Electrodes, comprises Graphite Electrodes body, and the top of described Graphite Electrodes body is provided with the silicon liquid occlusion part of radial protrusion at excircle.
Preferably, described silicon liquid occlusion part has the silicon liquid water conservancy diversion inclined-plane tilting downwards.
Preferably, described silicon liquid occlusion part is taper type, and its cone bottom diameter is greater than the diameter of Graphite Electrodes body, and its conical surface forms described silicon liquid water conservancy diversion inclined-plane.
Preferably, described Graphite Electrodes body is split-type structural, comprises Graphite Electrodes upper semi-body and the Graphite Electrodes lower semi-body of docking up and down.
Preferably, described Graphite Electrodes upper semi-body and Graphite Electrodes lower semi-body connect by helicitic texture.
Preferably, the top of described Graphite Electrodes lower semi-body is provided with threaded post, and the bottom of described Graphite Electrodes upper semi-body is provided with the threaded hole matching with described threaded post.
Preferably, on described silicon liquid water conservancy diversion inclined-plane, offer silicon liquid diversion trench.
For realizing above-mentioned the second object, the utility model provides a kind of single crystal growing furnace, comprises quartz crucible, graphite crucible, well heater, Graphite Electrodes and drop-bottom, and described Graphite Electrodes is the thermal field of single crystal furnace Graphite Electrodes described in above-mentioned any one.
Preferably, described Graphite Electrodes is arranged with quartz sheath and graphite protecting bush outward, and the diameter of described silicon liquid occlusion part is more than or equal to the diameter of described graphite protecting bush.
Preferably, the bottom of described silicon liquid occlusion part and the top of described graphite protecting bush fit or keep a determining deviation.
The problem that the utility model exists for prior art, the structure of Graphite Electrodes has been done to further improvement, on the basis of Graphite Electrodes body, the silicon liquid occlusion part of radial protrusion is arranged along excircle increase at its top, blocks function thereby make Graphite Electrodes have silicon liquid.When occurring to leak after silicon accident; block at silicon liquid under the effect of blocking at position, silicon liquid can not flow on drop-bottom along Graphite Electrodes, but flows to heat-resisting and can adsorb on the furnace bottom compressing tablet of silicon liquid; thereby protect the drop-bottom of single crystal growing furnace, effectively prevented the generation of explosion hazard.
The single crystal growing furnace that the utility model provides is provided with described thermal field of single crystal furnace Graphite Electrodes, and because described thermal field of single crystal furnace Graphite Electrodes has above-mentioned technique effect, the single crystal growing furnace that is provided with this thermal field of single crystal furnace Graphite Electrodes also possesses corresponding technique effect.
Brief description of the drawings
Fig. 1 is the structural representation of a kind of single crystal growing furnace in prior art;
Fig. 2 provides the structural representation of a kind of embodiment of thermal field of single crystal furnace Graphite Electrodes for the utility model;
Fig. 3 provides the structural representation of the second embodiment of thermal field of single crystal furnace Graphite Electrodes for the utility model;
Fig. 4 provides the structural representation of the third embodiment of thermal field of single crystal furnace Graphite Electrodes for the utility model;
The structural representation that Fig. 5 is single crystal growing furnace that the utility model provides;
Fig. 6 is the local enlarged diagram of aminoacyl site in Fig. 5.
In figure:
1. quartz crucible 2. graphite crucible 3. well heater 4. Graphite Electrodes 41. Graphite Electrodes upper semi-body 42. Graphite Electrodes lower semi-body 5. drop-bottom 6. silicon liquid occlusion part 7. silicon liquid water conservancy diversion inclined-plane 8. quartz sheath 9. graphite protecting bush 10. protection plate compressing tablets
Embodiment
In order to make those skilled in the art person understand better the utility model scheme, below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Please refer to Fig. 2, Fig. 2 provides the structural representation of a kind of embodiment of thermal field of single crystal furnace Graphite Electrodes for the utility model.
In a kind of embodiment, thermal field of single crystal furnace Graphite Electrodes 4 provided by the utility model is split-type structural, comprises Graphite Electrodes upper semi-body 41 and the Graphite Electrodes lower semi-body 42 of docking up and down.
Graphite Electrodes upper semi-body 41 connects by helicitic texture with Graphite Electrodes lower semi-body 42.Particularly, the top of Graphite Electrodes lower semi-body 42 is provided with threaded post, and the bottom of Graphite Electrodes upper semi-body 41 is provided with threaded hole, and both are connected with the cooperation of threaded hole by threaded post.Certainly, the position of above-mentioned threaded post and threaded hole also can exchange, and threaded post is positioned at Graphite Electrodes upper semi-body 41, and threaded hole is positioned at Graphite Electrodes lower semi-body 42.
The top of Graphite Electrodes upper semi-body 41 is taper type, and it is one-body molded in the time of processing and manufacturing Graphite Electrodes upper semi-body.This frustum portion, along the excircle radial protrusion of Graphite Electrodes upper semi-body, forms the silicon liquid occlusion part 6 that is similar to " umbrella " shape, and its cone bottom diameter is greater than the diameter of Graphite Electrodes body, and its conical surface forms the silicon liquid water conservancy diversion inclined-plane 7 tilting downwards.
For further improving the guide performance on silicon liquid water conservancy diversion inclined-plane 7, can also on silicon liquid water conservancy diversion inclined-plane 7, offer silicon liquid diversion trench (not shown) along the direction of taking advantage of a situation.
Graphite Electrodes 4 is divided into upper and lower two portions, in the time installing and using, Graphite Electrodes lower semi-body 42 is first installed, and the then quartz sheath 8 of installing electrodes, graphite protecting bush 9 successively, finally installs Graphite Electrodes upper semi-body 41 again.Change Graphite Electrodes 4 into split-type structural, reduced the physical dimension of processing graphite material, reduced the buying expenses of spare part, there is the features such as reasonable in design, simple to operate, practical.
Silicon liquid occlusion part 6 not only can be positioned at the top of Graphite Electrodes body, can also be positioned at position (seeing Fig. 3) on the lower, upper end, the size of its shape, outwardly convex, the angle on water conservancy diversion inclined-plane etc., can need to adjust (seeing Fig. 4) according to actual installation.
Please refer to Fig. 5, Fig. 6, the structural representation that Fig. 5 is single crystal growing furnace that the utility model provides; Fig. 6 is the local enlarged diagram of aminoacyl site in Fig. 5.
As shown in the figure, except thermal field of single crystal furnace Graphite Electrodes, the utility model also provides a kind of single crystal growing furnace, is mainly made up of quartz crucible 1, graphite crucible 2, well heater 3, Graphite Electrodes 4 and drop-bottom 5 etc., and wherein Graphite Electrodes 4 adopts thermal field of single crystal furnace Graphite Electrodes mentioned above.
The well heater pin of well heater 3 connects the top of Graphite Electrodes 4, and the bottom of Graphite Electrodes 4 connects single crystal growing furnace copper electrode.
Graphite Electrodes 4 is outer is arranged with quartz sheath 8 and graphite protecting bush 9, and the diameter of its silicon liquid occlusion part 6 is more than or equal to the diameter of graphite protecting bush 9, and the bottom of silicon liquid occlusion part 6 and the top of graphite protecting bush 9 keep a determining deviation.
Because increase has silicon liquid occlusion part 6 and silicon liquid water conservancy diversion inclined-plane 7, when occurring after silicon leakage accident, silicon liquid can flow on the protection plate compressing tablet 10 of single crystal growing furnace along the silicon liquid water conservancy diversion inclined-plane 7 of Graphite Electrodes 4, because there is the soft carbon felt of multilayer protection plate compressing tablet 10 belows, soft carbon felt can adsorb the silicon liquid flowing in a large number on protection plate compressing tablet 10, reduce the infringement to single crystal growing furnace of the silicon liquid that leaks out, effectively prevent that silicon liquid from flowing on drop-bottom 5 along Graphite Electrodes 4, prevent the generation of single crystal growing furnace explosion hazard, improved the security that single crystal growing furnace is produced.
Certainly, above-described embodiment is only preferred version of the present utility model, is specifically not limited to this, can make according to actual needs on this basis pointed adjustment, thereby obtain different embodiments.For example, the top of the bottom of silicon liquid occlusion part 6 and graphite protecting bush 9 fits etc.Because mode in the cards is more, just illustrate no longer one by one here.
Above thermal field of single crystal furnace Graphite Electrodes provided by the utility model and single crystal growing furnace are described in detail.Applied specific case herein principle of the present utility model and embodiment are set forth, the explanation of above embodiment is just for helping to understand core concept of the present utility model.Should be understood that; for those skilled in the art; do not departing under the prerequisite of the utility model principle, can also carry out some improvement and modification to the utility model, these improvement and modification also fall in the protection domain of the utility model claim.
Claims (10)
1. a thermal field of single crystal furnace Graphite Electrodes, comprises Graphite Electrodes body, it is characterized in that, the top of described Graphite Electrodes body is provided with the silicon liquid occlusion part (6) of radial protrusion at excircle.
2. thermal field of single crystal furnace Graphite Electrodes according to claim 1, is characterized in that, described silicon liquid occlusion part (6) has the silicon liquid water conservancy diversion inclined-plane (7) tilting downwards.
3. thermal field of single crystal furnace Graphite Electrodes according to claim 2, is characterized in that, described silicon liquid occlusion part (6) is taper type, and its cone bottom diameter is greater than the diameter of Graphite Electrodes body, and its conical surface forms described silicon liquid water conservancy diversion inclined-plane (7).
4. according to the thermal field of single crystal furnace Graphite Electrodes described in claims 1 to 3 any one, it is characterized in that, described Graphite Electrodes body is split-type structural, comprises Graphite Electrodes upper semi-body (41) and the Graphite Electrodes lower semi-body (42) of docking up and down.
5. thermal field of single crystal furnace Graphite Electrodes according to claim 4, is characterized in that, described Graphite Electrodes upper semi-body (41) connects by helicitic texture with Graphite Electrodes lower semi-body (42).
6. thermal field of single crystal furnace Graphite Electrodes according to claim 5, it is characterized in that, the top of described Graphite Electrodes lower semi-body (42) is provided with threaded post, and the bottom of described Graphite Electrodes upper semi-body (41) is provided with the threaded hole matching with described threaded post.
7. according to the thermal field of single crystal furnace Graphite Electrodes described in claim 2 or 3, it is characterized in that, on described silicon liquid water conservancy diversion inclined-plane (7), offer silicon liquid diversion trench.
8. a single crystal growing furnace, comprise quartz crucible (1), graphite crucible (2), well heater (3), Graphite Electrodes (4) and drop-bottom (5), it is characterized in that, described Graphite Electrodes (4) is the thermal field of single crystal furnace Graphite Electrodes described in the claims 1 to 7 any one.
9. single crystal growing furnace according to claim 8, it is characterized in that, described Graphite Electrodes (4) is outer is arranged with quartz sheath (8) and graphite protecting bush (9), and the diameter of described silicon liquid occlusion part (6) is more than or equal to the diameter of described graphite protecting bush (9).
10. single crystal growing furnace according to claim 8 or claim 9, is characterized in that, the top of the bottom of described silicon liquid occlusion part (6) and described graphite protecting bush (9) fits or keeps a determining deviation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420256095.9U CN203834050U (en) | 2014-05-19 | 2014-05-19 | Single crystal furnace thermal field graphite electrode and single crystal furnace |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420256095.9U CN203834050U (en) | 2014-05-19 | 2014-05-19 | Single crystal furnace thermal field graphite electrode and single crystal furnace |
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| CN203834050U true CN203834050U (en) | 2014-09-17 |
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| CN201420256095.9U Expired - Fee Related CN203834050U (en) | 2014-05-19 | 2014-05-19 | Single crystal furnace thermal field graphite electrode and single crystal furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023185696A1 (en) * | 2022-03-29 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | Specially-shaped graphite electrode column for reducing power consumption |
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2014
- 2014-05-19 CN CN201420256095.9U patent/CN203834050U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023185696A1 (en) * | 2022-03-29 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | Specially-shaped graphite electrode column for reducing power consumption |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140917 |