CN115083990A - Micro-LED巨量转移方法 - Google Patents
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Abstract
本发明公开了一种Micro‑LED巨量转移方法，首先制备好常规衬底上的Micro‑LED阵列。之后将光感应胶带与芯片绑定，再将芯片与原衬底进行分离。接着用光照射光感应胶带使其丧失黏性，之后将转移基板对准待转移芯片，进行芯片拾取。在接收基板上蒸镀好驱动电路，并蒸镀低熔点金属焊点。之后将带有芯片的转移基板对准目标衬底，并施加压力使芯片紧密贴合衬底，然后加热使得转移基板上的热释放胶丧失黏性，同时将焊点熔化。最后恢复常温移开转移基板完成芯片的转移。本发明可以将芯片的释放与芯片的焊接同时进行，从而提高了芯片转移的效率，同时可以通过控制转移基板上热释放性胶的图形来转移不同间距不同尺寸的芯片。
Description
技术领域
本发明涉及一种Micro-LED巨量转移方法，属于半导体照明与显示技术领域。
背景技术
Micro-LED显示作为一项新兴的显示技术，相比于现有成熟的LCD、OLED显示技术，Micro-LED有着功耗低、响应快、寿命长、光效率高等优点，这些优点使其十分适合应用于显示方面的应用。
对于目前Micro-LED实现全彩显示主要有量子点色转换和巨量转移的方式来实现。而量子点色转换方式由于有光损耗、制备工艺复杂、制备成本高等一系列缺点，因此巨量转移成为了实现全彩显示的一种非常理想的方式。目前的巨量转移系统主要是通过使用聚二甲基硅氧烷(PDMS)印章来对芯片进行拾取和释放，这种通过PDMS吸附力调控的转移方式可靠性较差，导致有些芯片不能达到预期地拾取，或者拾取之后难以释放，因此导致转移的效率及良率低下。虽然可以通过设计一些芯片的弱化结构来提高芯片拾取的成功率，但是在制备这种结构是会遇到复杂的工艺过程，导致难以达到预期的效果。
发明内容
本发明的目的在于提供一种Micro-LED巨量转移方法。
本发明的目的通过以下技术方案实现：
一种Micro-LED巨量转移方法，其特征在于其步骤包括：
(1)在原始衬底上制备Micro-LED芯片，同一外延片上的芯片之间通过刻蚀到原始衬底的沟槽进行隔开；
(2)在芯片上的n型氮化镓和p型氮化镓上分别制备n-金属电极和p-金属电极，制备成正装结构的Micro-LED芯片；
(3)将光感应胶带粘在芯片表面作为临时衬底，然后将芯片从原始衬底上剥离，使芯片转移到临时衬底上，形成临时衬底-芯片的结构；
(4)将临时衬底-芯片的临时衬底一侧暴露在紫外灯下，降低光感应胶带的黏性；
(5)准备转移基板，在转移基板上制作与芯片匹配的热释放性固体胶图形，将带有热释放性固体胶图案的转移基板对准临时衬底-芯片上的芯片，贴合形成转移基板-热释放性固体胶-芯片-临时衬底的结构；
(6)缓慢撕开光感应胶带，使芯片通过热释放性固体胶留在转移基板上；
(7)准备接收基板，所述接收基板上已经制备好驱动电路，在与芯片匹配的位置蒸镀了金属焊点；
(8)将带有芯片的转移基板与接收基板对准，施加压力使芯片上的电极与焊点紧密接触，然后对系统进行加热，使焊点熔化，再降温至该温度能使焊点凝固，但高于热释放性固体胶的释放温度，形成转移基板-热释放性固体胶-芯片-接收基板的结构，接着移开转移基板，将芯片冷却至常温，完成转移。
在选择热释放胶性固体胶时，其特性为在温度达到其释放温度时，其黏性会迅速下降，而低于其释放的温度时则具有较强的黏性，且该热释放的温度小于焊点金属的熔化温度，并且也小于焊点金属的初步凝固温度。
优选的，所述接收基板为刚性衬底或柔性衬底，所述刚性衬底为硅、玻璃或金刚石，柔性衬底为聚酰亚胺、聚二甲基硅氧烷或聚对苯二甲酸乙二醇酯。
优选的，所述金属焊点的熔点在190～400℃之间，所述热释放性固体胶的释放温度在80～160℃之间。
优选的，所述金属焊点采用金属铟或者Au-Sn合金或Sn-Pb合金。
优选的，所述Micro-LED芯片中，单颗芯片的尺寸在10～200微米，相邻芯片的间距在10～300微米。
优选的，步骤(8)中施加的压力为20～100N。
优选的，所述转移基板为透明基板。
与现有技术相比，本发明的有益效果在于：
(1)设计了一种热转移平台，通过温度来调控热释放胶的黏性，同时将热释放固体胶进行图案化成不同的大小和形状，以适应不同尺寸，不同结构的Micro-LED阵列的转移需求。
(2)运用热释放性固体胶作为转移头，使得Micro-LED的释放与器件的焊接在加热的状态下同时进行，从而提升了倒装芯片的转移的可靠性和效率。
(3)热释放性固体胶在恢复常温时会恢复到原来的黏性，因此该转移系统可以重复地多次转移，有利于进行大规模地巨量转移。
本发明的优势在于可以将芯片的释放与芯片的焊接同时进行，从而提高了芯片转移的效率，同时可以通过控制转移基板上热释放性胶的图形来转移不同间距不同尺寸的芯片。
附图说明
图1为使用传统工艺在蓝宝石衬底上制备Micro-LED阵列的示意图；其中10为蓝宝石衬底，11为氮化镓Micro-LED芯片，12为金属电极。
图2为本发明使用UV胶带对芯片进行绑定之后的示意图；其中13为光感应胶带。
图3为本发明中使用特定波长的灯照射带有芯片的光感应胶带的示意图。
图4为本发明中使用转移平台对芯片进行拾取并且剥离掉UV胶带的示意图。其中14为转移基板，15为热释放性固体胶。
图5为本发明中使用转移平台转移芯片时对芯片进行对准的示意图。其中16为蒸镀好的金属焊点，17为驱动电路，18为接收基板。
图6为本发明中将芯片进行释放后转移到接收基板上的Micro-LED芯片示意图。
具体实施方式
实施例1
本Micro-LED阵列的巨量转移方法，其步骤包括：
1)使用光刻技术以及ICP刻蚀技术制备出蓝宝石衬底10上的Micro-LED阵列11。单颗芯片的尺寸为100微米×100微米。相邻Micro-LED器件之间的距离也为100微米。并且n、p氮化镓上分别蒸镀Ti/Al/Ni/Au、Ni/Au合金作为金属电极12，图1为了简化将n、p电极画的一样，实际上n、p电极之间是有台阶的。制备方法可以参考Xu F F,Tao T,Liu B,etal.High-Performance semi-polar InGaN/GaN green micro light-emitting diodes[J].IEEE Photonics Journal,2019,12(1):1-7。
2)如图2所示，使用UV(Ultraviolet Rays，紫外光线)胶带13作为光感应胶带，将其绑定在有金属电极的芯片表面。UV胶又叫做光敏胶、紫外光固化胶，是一种芳香族类聚酰亚胺材料，在激光照射下长链分子发生键解，会产生一氧化碳、二氧化碳等气体。绑定之后便形成了UV胶带-LED芯片-蓝宝石衬底的结构。
3)将UV胶带-LED芯片-蓝宝石衬底的结构的蓝宝石一侧对着准分子激光，然后使用准分子激光照射蓝宝石，通过LED与蓝宝石界面处的氮化镓分解从而将蓝宝石进行剥离。制备成了UV胶带/LED芯片的结构。
4)具体的，所使用的准分子激光的发射波长在248nm，脉冲宽度为10～40ns，激光能量为200～300mJ/plus。
5)将剥离后的芯片置于盐酸溶液中浸泡2分钟，用于去除激光剥离后表面的氧化镓以及镓金属。
6)如图3所示，将UV胶带/LED芯片结构的UV胶带那一侧暴露在365nm的紫外灯下，照射时间为2～3分钟，使得UV胶带固化，黏性降低。
7)选择具有合适热释放胶结构的转移基板14，其热释放温度在120℃左右。单个热释放胶图形15的尺寸为80×80微米，相邻两个图形之间的距离为100微米。
8)如图4所示，将带有热释放胶图案的转移基板对准UV胶带上的LED芯片，然后对UV胶带上的芯片进行贴合，形成了转移基板-热释放性固体胶-LED芯片-UV胶带的结构，缓慢将UV胶带撕开完成了对LED芯片的拾取。
9)如图5所示，准备好一制备好驱动电路的一接收基板，如玻璃基板16，并且在合适的位置蒸镀好铟焊点17，所制备焊点为扁平状，以防止芯片在焊接时损坏。然后将接收基板18放置在转移基板的下方。
10)将带有LED芯片的转移基板和接收基板进行对准，使得n-p电极分别和接收基板上的正负电路上的焊点紧密接触，形成转移基板-热释放性固体胶-LED芯片-接收基板的结构，之后将整个系统在200℃的温度下进行加热。
11)具体的，所述转移基板对芯片所施加的压力为40N，并且在200℃下持续压5分钟左右，之后将整个系统冷却至120℃使得焊点凝固，之后保持2分钟后，最后移开转移基板然后将芯片冷却至常温完成转移，如图6所示。
上述实施例为本发明较好的实施方式，但本发明的实施方式并不受上述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。
Claims (7)
1.一种Micro-LED巨量转移方法，其特征在于其步骤包括：
(1)在原始衬底上制备Micro-LED芯片，同一外延片上的芯片之间通过刻蚀到原始衬底的沟槽进行隔开；
(2)在芯片上的n型氮化镓和p型氮化镓上分别制备n-金属电极和p-金属电极，制备成正装结构的Micro-LED芯片；
(3)将光感应胶带粘在芯片表面作为临时衬底，然后将芯片从原始衬底上剥离，使芯片转移到临时衬底上，形成临时衬底-芯片的结构；
(4)将临时衬底-芯片的临时衬底一侧暴露在紫外灯下，降低光感应胶带的黏性；
(5)准备转移基板，在转移基板上制作与芯片匹配的热释放性固体胶图形，将带有热释放性固体胶图案的转移基板对准临时衬底-芯片上的芯片，贴合形成转移基板-热释放性固体胶-芯片-临时衬底的结构；
(6)缓慢撕开光感应胶带，使芯片通过热释放性固体胶留在转移基板上；
(7)准备接收基板，所述接收基板上已经制备好驱动电路，在与芯片匹配的位置蒸镀了金属焊点；
(8)将带有芯片的转移基板与接收基板对准，施加压力使芯片上的电极与焊点紧密接触，然后对系统进行加热，使焊点熔化，再降温至该温度能使焊点凝固，但高于热释放性固体胶的释放温度，形成转移基板-热释放性固体胶-芯片-接收基板的结构，接着移开转移基板，将芯片冷却至常温，完成转移。
2.根据权利要求1所述的Micro-LED巨量转移方法，其特征在于：所述金属焊点的熔点在190～400℃之间，所述热释放性固体胶的释放温度在80～160℃之间。
3.根据权利要求1所述的Micro-LED巨量转移方法，其特征在于：所述接收基板为刚性衬底或柔性衬底，所述刚性衬底为硅、玻璃或金刚石，柔性衬底为聚酰亚胺、聚二甲基硅氧烷或聚对苯二甲酸乙二醇酯。
4.根据权利要求1-3中任一项所述的Micro-LED巨量转移方法，其特征在于：所述金属焊点采用金属铟或者Au-Sn合金或Sn-Pb合金。
5.根据权利要求1-3中任一项所述的Micro-LED巨量转移方法，其特征在于：所述Micro-LED芯片中，单颗芯片的尺寸在10～200微米，相邻芯片的间距在10～300微米。
6.根据权利要求1-3中任一项所述的Micro-LED巨量转移方法，其特征在于：
步骤(8)中施加的压力为20～100N。
7.根据权利要求1-3中任一项所述的Micro-LED巨量转移方法，其特征在于：所述转移基板为透明基板。
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