CN115083962A - Semiconductor reaction chamber heating equipment and method - Google Patents
Semiconductor reaction chamber heating equipment and method Download PDFInfo
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- CN115083962A CN115083962A CN202210689130.5A CN202210689130A CN115083962A CN 115083962 A CN115083962 A CN 115083962A CN 202210689130 A CN202210689130 A CN 202210689130A CN 115083962 A CN115083962 A CN 115083962A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 164
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 24
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- 230000008569 process Effects 0.000 claims description 12
- 238000005192 partition Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
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- 239000010408 film Substances 0.000 description 6
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- 238000005516 engineering process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- 239000000376 reactant Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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Abstract
The invention discloses a semiconductor reaction chamber heating device and method, and belongs to the field of semiconductor device heating. The device comprises a heating chamber, wherein one side of the heating chamber is provided with an air inlet, the other side of the heating chamber is provided with an air outlet, and a heating assembly is arranged in the heating chamber; the heating assembly comprises an upper heating lamp group and a lower heating lamp group, and the upper heating lamp group and the lower heating lamp group are respectively arranged on two sides of the heating chamber; the upper heating lamp group comprises a plurality of groups of annular lamps and a reflecting plate, and the plurality of groups of annular lamps are detachably connected to the reflecting plate; the lower heating lamp group comprises a plurality of groups of annular lamps and a reflecting plate, and the plurality of groups of annular lamps are detachably connected to the reflecting plate. The upper heating lamp group and the lower heating lamp group are arranged at the upper end and the lower end of the heating cavity, so that the upper surface and the lower surface of a processed workpiece can be uniformly heated, the rate of finished products is effectively increased, and the heating device is reasonable in structural design, simple in principle and convenient to popularize and use.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment heating, in particular to a semiconductor reaction chamber heating device and a semiconductor reaction chamber heating method.
Background
With the rapid development of semiconductor technology in recent years, the demand for reduction in the size of integrated circuits is becoming more severe. Especially, since the 45nm technology node is entered, the structure of the film material used by the transistor is complex, and the requirement on the film quality is extremely high. Therefore, ALD/EPI equipment with high film-forming quality and low film-forming rate gradually becomes mainstream equipment, and the thickness uniformity of the thin film is a key item in the index requirements of the equipment. The control of the thickness uniformity is directly related to the yield, and the non-uniformity of the film thickness is generally caused by non-uniform heating of the silicon wafer during the heat treatment process.
Most of the traditional semiconductor reaction chamber heating equipment adopts a single heating device to process in the process of processing workpieces, but the heating of the heating device is easily concentrated in a certain area, so that the whole processed workpieces are easily heated unevenly, and further the thickness of a film is uneven. With the rapid development of semiconductor technology, there is also equipment for simultaneously performing heat treatment by a plurality of heating devices, which can reduce the probability of non-uniformity of film thickness to a certain extent, but in the process of performing equipment maintenance, because the number of heating devices is too large, the maintenance time is easily overlong, and then unnecessary labor cost is increased.
In the prior art, as the Chinese patent application number: 202010449402.5, filing date of 2020, 5 and 25, the title of the invention is: a semiconductor processing apparatus. This application discloses a semiconductor process equipment, including the process chamber, be provided with heating device in the process chamber, heating device includes: the lamp comprises a central lamp holder and an edge lamp holder arranged around the central lamp holder; the central heating lamp is arranged on the central lamp holder; the radiating fins are connected with the central lamp holder and arranged on the periphery of the central heating lamp; the reflecting cylinder is connected with one end of the radiating fin, which is far away from the central lamp holder, is arranged on the periphery of the central heating lamp, and an opening is formed in one end of the reflecting cylinder, which is far away from the radiating fin; a plurality of edge heating lamps mounted on the edge lamp base and surrounding the center heating lamp. The invention has the advantages that the auxiliary heating device is added in the chamber, the inner temperature field of the base can be compensated, and the uniformity of the whole temperature field of the base is improved. However, the device cannot heat the upper surface and the lower surface of the heated workpiece uniformly in actual operation.
In summary, it is an urgent need to solve the technical problem of the prior art that how to uniformly heat the upper and lower surfaces of a heated semiconductor workpiece and improve the yield.
Disclosure of Invention
1. Technical problem to be solved by the invention
The invention aims to overcome the defect of nonuniform heating of semiconductor equipment in the heating process of the semiconductor equipment in the prior art, provides semiconductor reaction chamber heating equipment and a method, and aims to solve the problem of uniform heating of the semiconductor equipment in the processing process.
2. Technical scheme
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
the heating equipment for the semiconductor reaction chamber comprises a heating chamber, wherein one side of the heating chamber is provided with an air inlet, the other side of the heating chamber is provided with an air outlet, and a heating assembly is arranged in the heating chamber; the heating assembly comprises an upper heating lamp group and a lower heating lamp group, and the upper heating lamp group and the lower heating lamp group are respectively arranged on two sides of the heating chamber; the upper heating lamp group comprises a plurality of groups of annular lamps and a reflecting plate, and the plurality of groups of annular lamps are detachably connected to the reflecting plate; the lower heating lamp group comprises a plurality of groups of annular lamps and a reflecting plate, and the plurality of groups of annular lamps are detachably connected to the reflecting plate.
As a further improvement of the invention, the annular lamp comprises a plurality of arc lamps and fixing seats, the fixing seats are arranged at two ends of each arc lamp, and the arc lamps are connected to the reflecting plate through the fixing seats and the connecting seats.
As a further improvement of the invention, the adjacent ends of two adjacent arc lamps are connected to the reflecting plate through the same connecting seat.
As a further improvement of the invention, the connecting seat comprises a first clamp, a second clamp and a mounting plate, the first clamp and the second clamp are detachably connected to the mounting plate, the mounting plate is movably connected to the reflecting plate, the first clamp and the second clamp are movably connected, a first groove is arranged at the joint of the first clamp and the second clamp, a through hole is arranged on the reflecting plate and the mounting plate, the through hole is opposite to the position of the first groove, and the fixing seat passes through the through hole and abuts against the side wall of the first groove.
As a further improvement of the invention, joints are arranged at two ends of the arc lamp and penetrate through the fixed seat, an elastic sheet is arranged in the first groove, one end of the elastic sheet in the first groove is abutted against the joints, and the other end of the elastic sheet is abutted against the inner wall of the first groove.
As a further improvement of the invention, a partition plate is arranged on one side of the upper heating lamp group away from the reflecting plate, and a partition plate is arranged on one side of the lower heating lamp group away from the reflecting plate.
As a further improvement of the invention, the partition is a transparent quartz cover.
As a further improvement of the invention, the reflecting plate is provided with an arc-shaped groove, and the upper heating lamp group and the lower heating lamp group are both positioned in the arc-shaped groove.
As a further improvement of the present invention, the arc-shaped groove is parabolic.
As a further improvement of the invention, the annular lamp further comprises a power regulator, and the power regulator is used for regulating the power of the annular lamp.
As a further improvement of the invention, the diameter of the annular lamp is more than or equal to 400mm, R is more than or equal to 100mm, the direct distance between the annular lamp and the annular lamp is more than or equal to 80mm, and N is more than or equal to 2 and less than or equal to 4.
The invention relates to a heating method of a semiconductor reaction chamber, which comprises the following steps,
s1: selecting a corresponding reflecting plate, and adjusting the equipment;
s2: fixing a workpiece in the heating chamber, and introducing reaction gas from the gas inlet;
s3: adjusting the power of the upper heating lamp group and the lower heating lamp group to uniformly heat the workpiece; s4: and after the process is finished, taking out the workpiece.
As a further improvement of the invention, the reflecting surface of the reflecting plate is a paraboloid, and the irradiation range of the annular lamp is adjusted through the paraboloid and the parameters of the annular lamp.
As a further improvement of the invention, the parameters comprise the diameter R of the annular lamps, the number N of the annular lamps and the distance between the annular lamps, when the irradiation range is adjusted, the focal length of the paraboloid of the arc-shaped groove is determined, and the axis of the adjusted annular lamps is everywhere positioned at the focal point of the paraboloid.
As a further improvement of the present invention, in step S3, when the power of the heating element is adjusted, the adjustment is performed within the irradiation range of the ring-shaped lamp, so that the temperature rise is approximately linearly proportional to the power.
3. Advantageous effects
Compared with the prior art, the technical scheme provided by the invention has the following beneficial effects:
the upper heating lamp group and the lower heating lamp group are arranged at the upper end and the lower end of the heating chamber, so that the upper surface and the lower surface of a processed workpiece can be uniformly heated, and the yield is effectively increased;
according to the invention, two ends of the arc lamp are connected to the reflecting plate through the fixing seat and the connecting seat, and the connecting seat is detachably connected to the reflecting plate, so that the arc lamp is convenient to mount and dismount, the mounting and dismounting time is saved, and the efficiency is improved;
according to the invention, different reflecting plates are selected according to the size of the workpiece to be processed, and the diffuse reflection heat of the arc lamp is reflected to the workpiece through the arc groove on the reflecting plate, so that the area size and the temperature of the irradiated area on the workpiece can be adjusted, the yield of the workpiece is effectively improved, the production cost is effectively saved, the structural design is reasonable, the principle is simple, and the popularization and the use are convenient.
Drawings
FIG. 1 is a cross-sectional view of a heating chamber;
FIG. 2 is a schematic view of the annular lamp fixed to the reflector plate;
FIG. 3 is a schematic view of an arc lamp;
FIG. 4 is a schematic view of a heating assembly;
fig. 5 is a schematic structural view of the annular lamp.
100. A heating chamber; 101. an air inlet; 102. an air outlet; 200. a heating assembly; 201. an upper heating lamp group; 202. a lower heating lamp group; 203. an annular light fixture; 203a, arc lamps; 203a-1, a linker; 203b, a fixed seat; 203c, a connecting seat; 203c-1, a first clamp; 203c-2, a second clamp; 203c-3, a shrapnel; 203c-4, a mounting plate; 204. a reflective plate; 204a, an arc-shaped groove; 300. a separator.
Detailed Description
For a further understanding of the invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings and examples.
The structure, proportion, size and the like shown in the drawings are only used for matching with the content disclosed in the specification, so that the person skilled in the art can understand and read the description, and the description is not used for limiting the limit condition of the implementation of the invention, so the method has no technical essence, and any structural modification, proportion relation change or size adjustment still falls within the scope of the technical content disclosed by the invention without affecting the effect and the achievable purpose of the invention. In addition, the terms "upper", "lower", "left", "right" and "middle" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the relative positions may be changed or adjusted without substantial technical changes.
Referring to fig. 1 to 5, as an embodiment of a heating apparatus for a semiconductor reaction chamber according to the present invention, the present invention will be further described with reference to the following embodiments.
The semiconductor reaction chamber heating equipment comprises a heating chamber 100, wherein a gas inlet 101 is formed in one side of the heating chamber 100, a gas outlet 102 is formed in the other side of the heating chamber 100, and a heating assembly 200 is arranged in the heating chamber 100; the heating assembly 200 comprises an upper heating lamp set 201 and a lower heating lamp set 202, and the upper heating lamp set 201 and the lower heating lamp set 202 are respectively arranged on two sides of the heating chamber 100; the upper heating lamp group 201 comprises a plurality of groups of annular lamps 203 and a reflecting plate 204, and the plurality of groups of annular lamps 203 are detachably connected to the reflecting plate 204; the lower heating lamp group 202 comprises a plurality of groups of annular lamps 203 and a reflecting plate 204, and the plurality of groups of annular lamps 203 are detachably connected to the reflecting plate 204.
Be equipped with air inlet 101 on heating chamber 100 one side, air inlet 101 lets in reactant gas, is equipped with gas outlet 102 on heating chamber 100 air inlet 101 opposite side, discharges reactant gas, is equipped with heating element 200 in heating chamber 100, and heating element 200 heats the work piece, guarantees that the work piece is heated evenly.
The heating assembly 200 includes an upper heating lamp set 201 and a lower heating lamp set 202, and the upper heating lamp set 201 and the lower heating lamp set 202 can be preset with a distance from the workpiece according to the size of the workpiece, so as to achieve the purpose of uniformly heating the workpiece by the heating assembly 200. The upper heating lamp group 201 comprises a plurality of annular lamps 203 and a reflecting plate 204, the annular lamps 203 are fixed on the reflecting plate 204, one part of heat of the annular lamps 203 directly irradiates on a workpiece, and the other part of heat irradiates on the workpiece after being diffused and reflected by the reflecting plate 204; the lower heating lamp group 202 comprises a plurality of annular lamps 203 and a reflecting plate 204, the annular lamps 203 are fixed on the reflecting plate 204, one part of heat of the annular lamps 203 directly irradiates on the workpiece, and the other part of heat irradiates on the workpiece after diffused reflection of the reflecting plate 204.
Meanwhile, the upper heating lamp set 201 and the lower heating lamp set 202 are both arranged into the annular lamp 203, the workpiece is placed at the center of the annular lamp 203, and the workpiece is placed in the middle of the connecting line of the centers of the upper heating lamp set 201 and the lower heating lamp set 202, so that the workpiece can be uniformly irradiated in the heating process to the maximum extent.
The annular lamp 203 is connected for dismantling with being connected between the reflecting plate 204, when annular lamp 203 needs to be changed, dismantles or installs detachable construction fast, effectively improves production efficiency.
The annular lamp 203 comprises a plurality of arc lamps 203a and fixing seats 203b, the fixing seats 203b are arranged at two ends of each arc lamp 203a, and the arc lamps 203a are connected to the reflecting plate 204 through the fixing seats 203b and the connecting seats 203 c.
The fixing base 203b is coupled with the coupling base 203c such that the arc lamp 203a is fixed on the reflecting plate 204.
The annular lamp 203 is formed by connecting a plurality of arc lamps 203a to a reflecting plate 204 through connecting seats 203c, and the plurality of arc lamps 203a form a ring. Preferably, the number of the arc lamps 203a may be 2, 3, 4, and when the number of the arc lamps 203a is 2, the ring-shaped light fixture 203 is composed of two semicircular arc lamps 203 a; when the number of the arc lamps 203a is 3, the annular lamp 203 is composed of 3 120-degree rings; when the number of arc lamps 203a is 4, the ring-shaped lamp 203 is composed of 4 90 ° rings.
The ends of two adjacent arc lamps 203a are connected to the reflecting plate 204 through the same connecting seat 203 c. The connecting seats 203c on different ring-shaped light fixtures 203 are not on the same diameter, i.e. the connecting seats 203c on different ring-shaped light fixtures 203 are far away from each other. The light irradiated on the workpiece can be uniformly distributed, and the yield is effectively increased.
The connecting seat 203c comprises a first clamp 203c-1, a second clamp 203c-2 and a mounting plate 203c-4, the first clamp 203c-1 and the second clamp 203c-2 are detachably connected to the mounting plate 203c-4, the mounting plate 203c-4 is detachably connected to the reflecting plate 204, the first clamp 203c-1 is movably connected with the second clamp 203c-2, a first groove is formed at the joint of the first clamp 203c-1 and the second clamp 203c-2, through holes are formed in the reflecting plate 204 and the mounting plate 203c-4, the reflecting plate 204 is overlapped with the through holes in the mounting plate 203c-4, the through holes are opposite to the first groove, and the fixing seat 203b passes through the through holes and abuts against the side wall of the first groove.
The first clamp 203c-1 and the second clamp 203c-2 are detachably connected to the mounting plate 203c-4, specifically, bolted connections are adopted, screw holes are formed in the first clamp 203c-1 and the second clamp 203c-2, screw holes are also formed in the mounting plate 203c-4, the screw holes in the first clamp 203c-1 and the second clamp 203c-2 correspond to the screw holes in the mounting plate 203c-4, and the first clamp 203c-1 and the second clamp 203c-2 are fixed on the mounting plate 203c-4 through threaded matching of bolts and nuts. Screw holes are also formed between the first clamp 203c-1 and the second clamp 203c-2, and the first clamp 203c-1 and the second clamp 203c-2 are connected through bolts. The first groove is arranged at the position where the first clamp 203c-1 is contacted with the second clamp 203c-2, the reflecting plate 204 is provided with a through hole, the diameter of the through hole is such that the fixed seat 203b can penetrate through, the mounting plate 203c-4 is also provided with a through hole, the aperture size of the through hole is consistent with that of the through hole on the reflecting plate 204, and the mounting plate 203c-4 is connected with the reflecting plate 204 on the reflecting plate 204 through a bolt. The fixing seat 203b at one end of the arc lamp 203a penetrates through the reflecting plate 204 and the through hole on the mounting plate 203c-4 to extend into the first groove, the fixing seat 203b abuts against the inner wall of the first groove in the first groove, and the first clamp 203c-1 and the second clamp 203c-2 clamp the fixing seat 203b in the first groove to prevent the fixing seat 203b from falling off from the first groove.
When the arc-shaped lamp 203a needs to be replaced, the arc-shaped lamp 203a can be taken down from the connecting seat 203c only by unscrewing the bolts of the corresponding first clamp 203c-1 and second clamp 203c-2 and the connecting bolts of the first clamp 203c-1, second clamp 203c-2 and mounting plate 203c-4, the whole annular lamp (203) does not need to be taken down for maintenance and replacement, the workload is reduced, and the working efficiency is improved.
The two ends of the arc lamp 203a are provided with connectors 203a-1, the connectors 203a-1 penetrate through the fixed seat 203b, the first groove is internally provided with an elastic sheet 203c-3, one end of the elastic sheet 203c-3 in the first groove is abutted to the connectors 203a-1, and the other end of the elastic sheet 203c-3 is abutted to the inner wall of the first groove.
The fixed seat 203b is internally wrapped by the joint 203a-1, one end of the joint 203a-1 is connected with the arc-shaped lamp 203a, the other end of the joint 203a-1 is abutted to the elastic sheet 203c-3 in the first groove, the elastic sheet 203c-3 is used for clamping the joint 203a-1, the outer surface of the fixed seat 203b is made of ceramic, and the ceramic is a good insulator, so that the arc-shaped lamp 203a is prevented from short circuit during working.
The partition 300 is arranged on one side of the upper heating lamp set 201 away from the reflection plate 204, and the partition 300 is arranged on one side of the lower heating lamp set 202 away from the reflection plate 204. The barrier 300 is a transparent quartz cover.
The partition plate 300 is provided in the heating chamber 100 to separate the reaction gas from the heating assembly 200 and prevent the reaction gas from affecting the heating assembly 200, and at the same time, the partition plate 300 is provided as a transparent quartz cover which does not affect the heating assembly 200 from penetrating through the partition plate 300 to irradiate the workpiece.
The reflecting plate 204 is provided with an arc-shaped groove 204a, and the upper heating lamp set 201 and the lower heating lamp set 202 are both located in the arc-shaped groove 204 a. The arc-shaped groove 204a is parabolic.
The reflecting plate 204 is provided with an arc-shaped groove 204a, each group of the annular lamps 203 is arranged in the arc-shaped groove 204a, light emitted by the annular lamps 203 irradiates the arc-shaped groove 204a, finally irradiates a workpiece through diffuse reflection of the arc-shaped groove 204a, the irradiated area of the workpiece can be adjusted by adjusting the angle of the reflecting plate 204 and the positions of the annular lamps 203 in the arc-shaped groove 204a, and finally the workpiece is uniformly heated through complementation and matching of the groups of the annular lamps 203.
A power regulator is also included for regulating the power of the ring light fixture 203. According to the distance between the workpiece and the annular lamp 203, the power of the annular lamp 203 is properly adjusted through the power adjuster, so that the heated area and the temperature of the workpiece are constant, the workpiece is heated uniformly, and the yield is improved.
As another embodiment of the present invention:
a heating method of a semiconductor reaction chamber comprises the steps of,
s1: selecting a corresponding reflecting plate, and adjusting the equipment;
s2: fixing a workpiece in the heating chamber, and introducing reaction gas from the gas inlet;
s3: adjusting the power of the upper heating lamp group and the lower heating lamp group to uniformly heat the workpiece;
s4: and after the process is finished, taking out the workpiece. The reflecting surface of the reflecting plate 204 is a paraboloid, and the irradiation range of the annular lamp 203 is adjusted by the paraboloid and the parameters of the annular lamp 203.
The shape of the reflector plate 204 and the spacing of the ring lamps 203 affect the adjustable range and amplitude of the temperature of the heated workpiece surface while adjusting the power to achieve temperature uniformity. The relationship is as follows:
the number of the ring-shaped lamps 203 is N, the diameters of each group of the ring-shaped lamps 203 are sequentially R1, R2, … … RN, the upper heating lamp group 201 and the lower heating lamp group 202 are consistent, the power of each group of the ring-shaped lamps 204 is respectively the upper heating lamp group P11, P12, … … P1N, the lower lamp group P21, P22, … … P2N, the final temperature is T ± T, T is the required average temperature, T is the actual maximum deviation, and the temperature difference is a ═ T/T%. The focal length of the paraboloid of the reflector 204 is p.
The diameter R of the annular lamps 203, the number N of the annular lamps 203 and the distance between the annular lamps 203 are determined according to the diameter of the heated workpiece, the diameter of the annular lamps 203 is more than or equal to 400mm and is more than or equal to 100mm, the direct distance between the annular lamps 203 and the annular lamps 203 is more than or equal to 80mm, and the number N of the annular lamps 203 is more than or equal to 2 and is less than or equal to 4.
Determining the irradiation range of each annular lamp 203 according to the diameter R of the annular lamps 203, the number N of the annular lamps 203 and the distance between the annular lamps 203; the focal length p of the paraboloid of the arc-shaped groove 204a is determined, and the axes of the annular lamp 203 are adjusted to be positioned at the focal points of the paraboloid everywhere.
The diameter of a heated workpiece is about 300mm generally, the maximum diameter of an optimized space in the equipment is assumed to be 420mm, the optimized space is influenced by the processing technology of the annular lamps 203, the diameter of the annular lamps 203 is 100mm at the minimum, the distance between every two groups of annular lamps 203 is not less than 80mm, and therefore the number N of the annular lamps 203 is set to be not more than 4. The coverage of the single group of ring-shaped lamps 203 is limited and there is no mutual complementary adjustment, so the number N of the ring-shaped lamps 203 is generally 2, 3, 4. Preferably 3 groups.
Firstly, confirming the irradiation range of each group of annular lamps 203, ensuring that 3 groups of annular lamps 203 can be complemented to ensure that the workpiece is uniformly heated, and according to the irradiation range of the annular lamps 203, the diameter of the annular lamps 203 and the distance from the annular lamps 203 to the highest point of the arc-shaped groove 204a, through a formula:
Y 2 ＝2pX
wherein, Y represents the irradiation range of the annular lamp 203, and X represents the distance from the annular lamp 203 to the highest point of the arc-shaped groove 204a, so as to calculate the focal length p of the paraboloid, and keep the axis of the annular lamp always positioned on the focal length p, thereby ensuring that the irradiation range of the annular lamp 203 is fixed, and finally, the upper surface and the lower surface of the workpiece are uniformly heated by the mutual matching compensation of the three groups of annular lamps 203.
In the case where the heatable zones of each group of annular lamps 203 are controllable, the power P of the arc lamps 203a is adjusted, the effect of the power on the temperature rise is a proportional linear effect, the random temperature Ta is P δ, δ is a constant value, the total temperature in one zone is the effect of the sum of the light powers acting in that zone, and TN is P1N δ 1+ P2N δ 2. By adjusting the power, T1-T2-TN is obtained. The power of each group of the annular lamps 203 is adjustable, the effect of changing the temperature of each part on the surface of the heating workpiece can be achieved by changing the power of each group of the heating lamps 203, so that the thickness of the produced film is adjusted in real time according to the process requirements, and certain uniformity is achieved.
Specifically, in one embodiment, the heating lamps 203 are divided into 3 groups of ring lamps, and each group of lamps is covered by a reflecting plate with a parabolic reflecting surface. The diameters of each group of arc lamps 203a are respectively 150mm, 260mm and 350mm, the upper lamp group and the lower lamp group are consistent, the focal length of the paraboloid of the reflecting plate is p, and the inclination angle of the paraboloid of the reflecting plate is 26 degrees to 22 degrees; 20, -12 °; 12, -8 °; lower lamp set 20, -15 °; 15, -15 °; 14, 5 degrees. The final temperature is T + -T, T is the average temperature needed, T is the actual maximum deviation, and the temperature difference is a T/T%, which is about + -0.5%. The temperature of the central area of the heated workpiece is raised by raising the power of the annular lamp 203 near the central position of the reflector plate 204, and the temperature of the central area of the heated workpiece is also lowered by lowering the power of the annular lamp 203 far from the central position of the reflector plate 204.
The present invention and its embodiments have been described above schematically, without limitation, and what is shown in the drawings is only one of the embodiments of the present invention, and the actual structure is not limited thereto. Therefore, if the person skilled in the art receives the teaching, without departing from the spirit of the invention, the person skilled in the art shall not inventively design the similar structural modes and embodiments to the technical solution, but shall fall within the scope of the invention.
Claims (15)
1. A semiconductor reaction chamber heating apparatus, characterized in that: comprises the steps of (a) preparing a mixture of a plurality of raw materials,
the heating device comprises a heating chamber (100), wherein an air inlet (101) is formed in one side of the heating chamber (100), an air outlet (102) is formed in the other side of the heating chamber (100), and a heating assembly (200) is arranged in the heating chamber (100); and the number of the first and second groups,
the heating assembly (200) comprises an upper heating lamp set (201) and a lower heating lamp set (202), and the upper heating lamp set (201) and the lower heating lamp set (202) are respectively arranged on two sides of the heating chamber (100);
the upper heating lamp group (201) comprises a plurality of groups of annular lamps (203) and a reflecting plate (204), and the plurality of groups of annular lamps (203) are detachably connected to the reflecting plate (204);
the lower heating lamp group (202) comprises a plurality of groups of annular lamps (203) and a reflecting plate (204), and the plurality of groups of annular lamps (203) are detachably connected to the reflecting plate (204).
2. The semiconductor reaction chamber heating apparatus of claim 1, wherein: the annular lamp (203) comprises a plurality of arc lamps (203a) and fixing seats (203b), the two ends of each arc lamp (203a) are respectively provided with the fixing seats (203b), and the arc lamps (203a) are connected to the reflecting plate (204) through the fixing seats (203b) and the connecting seats (203 c).
3. The semiconductor reaction chamber heating apparatus of claim 2, wherein: one ends of two adjacent arc-shaped lamps (203a) close to each other are connected to the reflecting plate (204) through the same connecting seat (203 c).
4. The semiconductor reaction chamber heating apparatus of claim 2 or 3, wherein: the connection base (203c) includes a first clamp (203c-1), a second clamp (203c-2), and a mounting plate (203c-4), the first clamp (203c-1) and the second clamp (203c-2) are both detachably connected on the mounting plate (203c-4), the mounting plate (203c-4) is movably connected on the reflecting plate (204), the first clamp (203c-1) is movably connected with the second clamp (203c-2), a first groove is arranged at the joint of the first clamp (203c-1) and the second clamp (203c-2), the reflecting plate (204) and the mounting plate (203c-4) are provided with through holes, the through holes are right opposite to the first groove, and the fixing seat (203b) penetrates through the through holes to be abutted against the side wall of the first groove.
5. The semiconductor reaction chamber heating apparatus of claim 4, wherein: the arc lamp (203a) is characterized in that joints (203a-1) are arranged at two ends of the arc lamp (203a), the joints (203a-1) penetrate through the fixed seat (203b), an elastic sheet (203c-3) is arranged in the first groove, one end of the elastic sheet (203c-3) in the first groove is abutted to the joints (203a-1), and the other end of the elastic sheet (203c-3) is abutted to the inner wall of the first groove.
6. The semiconductor reaction chamber heating apparatus of claim 2 or 3, wherein: a partition plate (300) is arranged on one side, away from the reflecting plate (204), of the upper heating lamp group (201), and a partition plate (300) is arranged on one side, away from the reflecting plate (204), of the lower heating lamp group (202).
7. The semiconductor reaction chamber heating apparatus of claim 6, wherein: the partition plate (300) is a transparent quartz cover.
8. The semiconductor reaction chamber heating apparatus of claim 1, wherein: an arc-shaped groove (204a) is formed in the reflecting plate (204), and the upper heating lamp group (201) and the lower heating lamp group (202) are located in the arc-shaped groove (204 a).
9. The semiconductor reaction chamber heating apparatus of claim 8, wherein: the arc-shaped groove (204a) is parabolic.
10. The semiconductor reaction chamber heating apparatus of claim 9, wherein: the power regulator is further included and used for regulating the power of the annular lamp (203).
11. The semiconductor reaction chamber heating apparatus of claim 5, wherein: the diameter of the annular lamp (203) is more than or equal to 400mm, R is more than or equal to 100mm, the direct distance between the annular lamp (203) and the annular lamp (203) is more than or equal to 80mm, and N is more than or equal to 2 and less than or equal to 4 in the number of the annular lamps (203).
12. A method of heating using the semiconductor reaction chamber heating apparatus of any one of claims 1 to 11, comprising:
s1: selecting a corresponding reflecting plate (204), and adjusting the equipment;
s2: fixing a workpiece in a heating chamber (100), and introducing reaction gas from a gas inlet (101);
s3: the power of the upper heating lamp set (201) and the lower heating lamp set (202) is adjusted to uniformly heat the workpiece;
s4: and after the process is finished, taking out the workpiece.
13. The method of claim 12, wherein: the reflecting surface of the reflecting plate (204) is a paraboloid, and the irradiation range of the annular lamp (203) is adjusted through the paraboloid and the parameters of the annular lamp (203).
14. The method of claim 13, wherein: the parameters of the annular lamps (203) comprise the diameter R of the annular lamps (203), the number N of the annular lamps (203) and the space between the annular lamps (203);
when the irradiation range is adjusted, the focal length of the paraboloid of the arc-shaped groove (204a) is determined, and the axis of the ring-shaped lamp (203) is adjusted to be positioned at the focal point of the paraboloid everywhere.
15. The method of claim 14, wherein: in step S3, when the power of the heating element (200) is adjusted, the temperature rise is adjusted in the irradiation range of the ring-shaped lamp (203) so as to be approximately linearly proportional to the power.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210689130.5A CN115083962A (en) | 2022-06-17 | 2022-06-17 | Semiconductor reaction chamber heating equipment and method |
| PCT/CN2022/105138 WO2023240726A1 (en) | 2022-06-17 | 2022-07-12 | Semiconductor reaction chamber heating device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210689130.5A CN115083962A (en) | 2022-06-17 | 2022-06-17 | Semiconductor reaction chamber heating equipment and method |
Publications (1)
| Publication Number | Publication Date |
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| CN115083962A true CN115083962A (en) | 2022-09-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210689130.5A Pending CN115083962A (en) | 2022-06-17 | 2022-06-17 | Semiconductor reaction chamber heating equipment and method |
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| Country | Link |
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| CN (1) | CN115083962A (en) |
| WO (1) | WO2023240726A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0845863A (en) * | 1994-07-27 | 1996-02-16 | Touyoko Kagaku Kk | Single wafer semiconductor substrate heat treatment device |
| JP3911071B2 (en) * | 1997-06-13 | 2007-05-09 | サイエンステクノロジー株式会社 | High speed lamp heat treatment apparatus and high speed lamp heat treatment method |
| KR100621777B1 (en) * | 2005-05-04 | 2006-09-15 | 삼성전자주식회사 | Substrate heat processing apparatus |
| US7718225B2 (en) * | 2005-08-17 | 2010-05-18 | Applied Materials, Inc. | Method to control semiconductor film deposition characteristics |
| JP2008182180A (en) * | 2006-12-26 | 2008-08-07 | Epicrew Inc | Heating apparatus and semiconductor manufacturing apparatus |
| JP7040899B2 (en) * | 2017-04-05 | 2022-03-23 | ウシオ電機株式会社 | Heating light source device |
-
2022
- 2022-06-17 CN CN202210689130.5A patent/CN115083962A/en active Pending
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