CN111599722A - Semiconductor process equipment - Google Patents
Semiconductor process equipment Download PDFInfo
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- CN111599722A CN111599722A CN202010449402.5A CN202010449402A CN111599722A CN 111599722 A CN111599722 A CN 111599722A CN 202010449402 A CN202010449402 A CN 202010449402A CN 111599722 A CN111599722 A CN 111599722A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
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Abstract
The invention discloses semiconductor process equipment, which comprises a process chamber, wherein a heating device is arranged in the process chamber, and the heating device comprises: the lamp comprises a central lamp holder and an edge lamp holder arranged around the central lamp holder; the central heating lamp is arranged on the central lamp holder; the radiating fins are connected with the central lamp holder and arranged on the periphery of the central heating lamp; the reflecting cylinder is connected with one end of the radiating fin, which is far away from the central lamp holder, is arranged on the periphery of the central heating lamp, and an opening is formed in one end of the reflecting cylinder, which is far away from the radiating fin; a plurality of edge heating lamps mounted on the edge lamp base and surrounding the center heating lamp. According to the invention, the auxiliary heating device is added in the chamber, so that the internal temperature field of the base can be compensated, and the uniformity of the whole temperature field of the base is improved.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to semiconductor process equipment.
Background
The chemical vapor deposition epitaxial growth is to convey reaction gas to a reaction chamber, react the reaction gas by heating and the like, grow atoms and deposit the atoms on a substrate, and grow a single crystal layer. The heating system plays an extremely important role in silicon epitaxial equipment, mainly comprises an infrared halogen heating lamp and a gold-plated reflecting screen, infrared rays emitted by the heating lamp irradiate a graphite tray through the reflecting effect of a gold-plated part, the tray is heated and forms an even temperature field, and wafers on the tray are uniformly heated so as to grow an epitaxial layer with even resistivity.
In the existing heating system, infrared rays emitted by a heating lamp irradiate on a graphite tray through the reflection action of a gold-plated reflecting screen, so that a uniform temperature field is formed. The lamp rear reflecting screen is divided into two areas of inclination and flatness, and the heating lamps in the areas are called inner zone lamps and outer zone lamps. The light of the inner area lamp is reflected by the inclined area and then irradiates the inner area of the base; the outer lamp light is reflected by the flat area and vertically irradiates the outer area of the base. The purpose of adjusting the temperature field is further realized by controlling the power ratio of the internal heating lamp and the external heating lamp.
By adopting the existing heating system, the surface temperature field of the tray has the tendency of low center and high edge, and the uniformity of the temperature field can meet the process requirements only under the condition that the power of the inner area is very limited by changing the power ratio of the inner area and the outer area. The adjustable space of the power ratio is very limited, and in addition, the service power of the heating lamp in the inner area is higher, and the service life is greatly shortened.
Therefore, how to improve the uniformity of the thermal field, reduce the power ratio of the inner region, and reduce the power consumption of a single lamp bulb is a subject of current research.
Disclosure of Invention
The invention aims to provide semiconductor process equipment which can solve the problem of nonuniform temperature of a temperature field.
In order to achieve the above object, the present invention provides a semiconductor processing apparatus, including a process chamber, wherein a heating device is disposed in the process chamber, and the heating device includes:
the lamp comprises a central lamp holder and an edge lamp holder arranged around the central lamp holder;
a central heating lamp mounted on the central lamp base;
the radiating fins are connected with the central lamp holder and arranged on the periphery of the central heating lamp;
the reflecting cylinder is connected with one end, far away from the central lamp holder, of the radiating fin and arranged on the periphery of the central heating lamp, and an opening is formed in one end, far away from the radiating fin, of the reflecting cylinder;
a plurality of edge heating lamps mounted on the edge lamp base and surrounding the center heating lamp.
Preferably, the axial section of the reflection cylinder is a trapezoid, and the opening is arranged at one end corresponding to the longer bottom side of the trapezoid.
Preferably, the reflecting cylinder is connected with the radiating fin through a screw.
Preferably, the inner surface of the reflecting barrel is plated with a metal reflecting layer.
Preferably, the central heating lamp is positioned below a susceptor in the semiconductor process chamber, and an extension of an axis of the central heating lamp is directed to a central region of the susceptor.
Preferably, the number of the central heating lamps is at least two, and the central heating lamps are symmetrically arranged relative to the center of the base.
Preferably, the method further comprises the following steps: the central reflecting screen is barrel-shaped, and the central heating lamp is arranged in the central reflecting screen.
Preferably, the method further comprises the following steps: subregion reflecting screen, the cover is located central reflecting screen periphery just is located the edge heating lamp is kept away from one side of base, the subregion reflecting screen is circular flat-plate-shaped, including a plurality of alternate slope district and flat district, corresponding to the slope district the edge heating lamp is interior district lamp, corresponding to the flat district the edge heating lamp is outer district lamp, the light of interior district lamp shines after slope district reflection the central zone of base, the light of outer district lamp shines after flat district reflection the marginal zone of base.
Preferably, the method further comprises the following steps: the gold-plated clamping plate divides the central reflecting screen into at least two areas in the direction perpendicular to the bottom surface of the central reflecting screen, and at least one central heating lamp is arranged in each area.
Preferably, the method further comprises the following steps: the power adjuster is used for adjusting the power of the inner zone lamp, the outer zone lamp and the central heating lamp.
The invention has the beneficial effects that:
through set up central heating lamp and the marginal heating lamp that encircles central heating lamp simultaneously in process chamber, can realize compensating the interior district temperature field of base, improve the homogeneity of the whole temperature field of base.
Furthermore, the longitudinal section of the reflecting cylinder is trapezoidal, and the top extension line of the central heating lamp points to the middle area of the base, so that the light of the central heating lamp can be intensively emitted to the middle area of the base, and the heat dissipation loss is reduced.
Furthermore, the central heating lamp can effectively reduce the power ratio of the inner zone lamp, reduce the service power of a single bulb and further prolong the service life of the bulb.
Furthermore, the power of the bulb is adjusted through the power adjuster, so that the adjustable space of power ratio is enlarged, and the adjustability of a temperature field is improved.
The apparatus of the present invention has other features and advantages which will be apparent from or are set forth in detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the invention.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings, in which like reference numerals generally represent like parts.
Fig. 1 is a schematic diagram illustrating an internal structure of a process chamber in a semiconductor processing apparatus according to an embodiment of the present invention.
Fig. 2 shows a schematic partial structure of a heating device according to an embodiment of the present invention.
Fig. 3 shows a schematic structural diagram of a partitioned reflecting screen according to an embodiment of the present invention.
Description of reference numerals:
1 a central heating lamp; 2-a reflector tube; 3-a heat sink; 4-a central lamp base; 41-edge lamp base; 5-a screw; 6-central reflective screen; 7-edge heating lamps; 8-a partitioned reflecting screen; 81-inclined area; 82-a flat region; 9-a base; 10-gold plating splint.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
An embodiment of the present invention provides a semiconductor processing apparatus, which includes a process chamber, wherein a heating device is disposed in the process chamber, and fig. 1 illustrates an internal structure diagram of the process chamber. Fig. 2 is a partial schematic structural view of a heating apparatus, and referring to fig. 1 and 2, the heating apparatus includes:
a center lamp holder 4 and a rim lamp holder 41 disposed around the center lamp holder 4;
the central heating lamp 1, the central heating lamp 1 is installed on the central lamp holder 4;
the radiating fins 3 are connected with the central lamp holder 4 and arranged on the periphery of the central heating lamp 1;
the reflecting cylinder 2 is connected with one end of the radiating fin 3, which is far away from the central lamp holder 4, and is arranged on the periphery of the central heating lamp 1, and one end of the reflecting cylinder 2, which is far away from the radiating fin 3, is provided with an opening;
a plurality of edge heating lamps 7, the plurality of edge heating lamps 7 being mounted on the edge lamp holders 41 and surrounding the center heating lamp 1.
Specifically, the process chamber comprises an upper heating module and a lower heating module, the upper heating module and the lower heating module are almost of a symmetrical structure, the lower heating module is taken as an example, in the embodiment, the central heating lamp 1 is cylindrical, and the diameter of the lower part of the central heating lamp 1 is smaller than that of the upper part. The upper part area is a main heating area, and the periphery of the lower part is sleeved with a radiating fin 3 for radiating the central heating lamp 1. The center heating lamp 1 is mounted at the bottom on a center lamp holder 4. The outer circumference of the center lamp holder 4 is provided with a plurality of edge lamp holders 41 surrounding the center lamp holder 4, and each edge lamp holder 41 is mounted with an edge heating lamp 7. In this embodiment, the heat sink 3 is formed in a plurality of parallel spaced rings, and the diameter of the heat sink 3 is approximately equal to the diameter of the upper portion of the central heating lamp 1. In the allowable range of space, the size of the radiating fins 3 can be increased to achieve a better radiating effect, and the number and size of the radiating fins 3 can be reduced to reduce the cost under the condition of ensuring the radiating effect. The material of the heat sink 3 may be selected from metal or alloy, such as silver, copper, aluminum alloy, etc., or other dielectric material with high thermal conductivity.
The periphery of the upper part of the central heating lamp 1 is sleeved with a reflecting cylinder 2, and the reflecting cylinder 2 is used for reflecting infrared rays emitted by the central heating lamp 1 and reflecting the infrared rays to an area to be heated. In this embodiment, the reflective cylinder 2 is made of copper, and the inner surface thereof is plated with a metal reflective layer, which is made of gold in this embodiment. The metal reflective layer on the inner surface of the reflective cylinder 2 may be made of other metal materials having a reflective function. In this embodiment, the reflection cylinder 2 is cylindrical, and the axial cross section thereof is trapezoidal, and an opening is provided at an end corresponding to the longer bottom side of the trapezoid, and the opening corresponds to the top end of the reflection cylinder 2, that is, the reflection cylinder 2 is narrow at the bottom and wide at the top. The shape of the reflector tube 1 may be an umbrella shape or other shapes, and the specific shape may be set according to an area to which infrared rays reflected by the central heating lamp 1 are to be radiated after being reflected by the reflector tube 2. In this embodiment, the top of the reflector barrel 2 is almost flush with the top of the central heating lamp 1. In other embodiments, the top end of the reflector barrel 2 may be located below the top end of the central heating lamp 1 or beyond the top end of the central heating lamp 1. In this embodiment, the lower end of the reflection cylinder 2 is connected to the upper end of the heat sink 3 by a screw 5, but in other embodiments, the two may be welded together.
The base 9 is located between the upper and lower heating modules, the base 9 is above for placing the parts to be heated, the central heating lamp 1 may be located below the base 9, and the extension line of the axis of the central heating lamp 1 (along the extension line of the top end) is directed to the central area of the base 9 for heating the central area of the parts to be heated (also the central area of the base). In this embodiment, the structure of the reflector tube 2 is beneficial to concentrating the light of the central heating lamp 1 to the middle area of the base after being reflected, and reducing the loss of heat dissipation.
The process chamber is internally provided with a central reflecting screen 6 and a plurality of edge heating lamps 7 surrounding the periphery of the central reflecting screen 6, and the central reflecting screen 6 is barrel-shaped. In this embodiment, the central reflecting screen 6 is made of copper, and the outer surface thereof is coated with a metal reflecting layer made of gold, for example. The top ends of the edge heating lamps 7 are arranged opposite to the outer wall of the central reflecting screen 6, surrounding the periphery thereof, and in the alternative, a plurality of edge heating lamps 7 are symmetrically arranged. The inside of central reflecting screen 6 has the accommodation space, and central heating lamp 1 sets up in the inside of central reflecting screen 6.
The chamber further comprises a partition reflecting screen 8 which is sleeved on the periphery of the central reflecting screen 6 and is positioned on one side of the edge heating lamp 7 far away from the base 9. Referring to fig. 3, fig. 3 is a schematic structural diagram of the zoned reflection screen 8 in this embodiment, the zoned emission screen 8 is a circular flat plate, and includes a plurality of inclined areas 81 and flat areas 82 arranged alternately, the flat areas 82 and the inclined areas 81 are distributed at intervals along the circumferential direction, the shapes and sizes of the two areas may be the same or different, the edge heating lamp 7 corresponding to the inclined area 81 is an inner area lamp, the edge heating lamp 7 corresponding to the flat area 82 is an outer area lamp, the lamp light of the inner area lamp is reflected by the inclined area 81 and then irradiates the central area of the base 9, and the lamp light of the outer area lamp is reflected by the flat area 82 and then irradiates the peripheral area of the base 9. The central heating lamp 1 is used to heat the central region of the susceptor 9. The power ratio of the inner zone lamp can be effectively reduced by adding the central heating lamp, the service power of a single bulb is reduced, and the service life of the bulb is prolonged. The side of the zoned emission screen 8 opposite the edge heating lamps 7 is coated with gold as a reflective layer.
The chamber interior further comprises a gold-plated clamping plate 10, and the gold-plated clamping plate 10 divides the central reflecting screen 6 into at least two regions in a direction perpendicular to the bottom surface of the central reflecting screen 6, and at least one central heating lamp 1 is arranged in each region. In this embodiment, the gold-plated clamping plate 10 divides the central reflecting screen 6 into two regions, each of which is provided with one central heating lamp, and the two central heating lamps 1 are symmetrically arranged with respect to the center of the base 9. The central lamp base 4 is fixed on a gold-plated clamping plate 10. The gold-plated splint 10 also has its surface coated with gold.
The semiconductor process equipment according to the preferred embodiment of the invention further comprises a power adjuster connected with the central heating lamp and the edge heating lamp and used for adjusting the power of the inner zone lamp, the outer zone lamp and the central heating lamp. The power of the bulb is adjusted by the power adjuster, so that the adjustable space of power ratio is increased, and the adjustability of a temperature field is improved.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (10)
1. A semiconductor processing apparatus comprising a process chamber having a heating device disposed therein, the heating device comprising:
the lamp comprises a central lamp holder and an edge lamp holder arranged around the central lamp holder;
a central heating lamp mounted on the central lamp base;
the radiating fins are connected with the central lamp holder and arranged on the periphery of the central heating lamp;
the reflecting cylinder is connected with one end, far away from the central lamp holder, of the radiating fin and arranged on the periphery of the central heating lamp, and an opening is formed in one end, far away from the radiating fin, of the reflecting cylinder;
a plurality of edge heating lamps mounted on the edge lamp base and surrounding the center heating lamp.
2. The semiconductor processing apparatus according to claim 1, wherein the reflector tube has a trapezoidal axial cross section, and the opening is provided at an end corresponding to a longer bottom side of the trapezoid.
3. The semiconductor processing apparatus of claim 1, wherein the reflector cartridge and the heat sink are attached by screws.
4. The semiconductor processing apparatus of claim 1, wherein an interior surface of the reflector tube is plated with a metallic reflective layer.
5. The semiconductor processing apparatus of any of claims 1 to 4, wherein the central heating lamp is located below a susceptor in the semiconductor processing chamber, and an extension of an axis of the central heating lamp is directed toward a central region of the susceptor.
6. The semiconductor processing apparatus of claim 5, wherein the central heating lamps are at least two and are symmetrically disposed with respect to a center of the susceptor.
7. The semiconductor processing apparatus of any one of claims 1-4, further comprising: the central reflecting screen is barrel-shaped, and the central heating lamp is arranged in the central reflecting screen.
8. The semiconductor processing apparatus of claim 7, further comprising: subregion reflecting screen, the cover is located central reflecting screen periphery just is located the edge heating lamp is kept away from one side of base, the subregion reflecting screen is circular flat-plate-shaped, including a plurality of alternate slope district and flat district, corresponding to the slope district the edge heating lamp is interior district lamp, corresponding to the flat district the edge heating lamp is outer district lamp, the light of interior district lamp shines after slope district reflection the central zone of base, the light of outer district lamp shines after flat district reflection the marginal zone of base.
9. The semiconductor processing apparatus of claim 7, further comprising: the gold-plated clamping plate divides the central reflecting screen into at least two areas in the direction perpendicular to the bottom surface of the central reflecting screen, and at least one central heating lamp is arranged in each area.
10. The semiconductor processing apparatus of claim 8, further comprising: the power adjuster is used for adjusting the power of the inner zone lamp, the outer zone lamp and the central heating lamp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010449402.5A CN111599722B (en) | 2020-05-25 | 2020-05-25 | Semiconductor process equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010449402.5A CN111599722B (en) | 2020-05-25 | 2020-05-25 | Semiconductor process equipment |
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| CN111599722A true CN111599722A (en) | 2020-08-28 |
| CN111599722B CN111599722B (en) | 2023-04-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114158145A (en) * | 2021-11-29 | 2022-03-08 | 北京北方华创微电子装备有限公司 | Heating lamp mounting structure and semiconductor chamber |
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| CN114158145A (en) * | 2021-11-29 | 2022-03-08 | 北京北方华创微电子装备有限公司 | Heating lamp mounting structure and semiconductor chamber |
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| CN111599722B (en) | 2023-04-14 |
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