KR101796214B1

KR101796214B1 - Apparatus for processing substrate

Info

Publication number: KR101796214B1
Application number: KR1020160012824A
Authority: KR
Inventors: 남원식; 연강흠; 송대석
Original assignee: (주)앤피에스; 남원식
Priority date: 2016-02-02
Filing date: 2016-02-02
Publication date: 2017-11-13
Also published as: KR20170092160A

Abstract

The present invention relates to a substrate processing apparatus comprising a processing chamber for forming a processing space for a roll-shaped substrate, a heating unit including a first heating unit and a second heating unit disposed at the outermost and central portions of the processing space, The first heating unit and the second heating unit, and includes a susceptor unit that horizontally divides the process space into at least one or more substrates, thereby uniformly heating the substrates arranged in the roll type have.
As described above, all the surfaces of the substrate can be uniformly heated, thereby suppressing or preventing the deterioration of the partial area of the substrate and the generation of the cold spot, and the quality of the finally produced product can be increased. In addition, the increase in the quality of the product can increase the efficiency and productivity of the process equipment due to the increase in the yield of the process.

Description

[0001] Apparatus for processing substrate [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of uniformly heating a substrate arranged in a roll type.

In recent years, a rapid thermal processing (RTP) method has been widely used as a method of heat-treating a substrate or the like.

The rapid thermal processing method is a method of heating a substrate by irradiating the substrate with radiation (emitted light) emitted from a heat source such as a tungsten lamp. Such a rapid thermal annealing method can heat or cool the substrate quickly, and can easily control the pressure condition and the temperature band, thereby improving the heat treatment quality of the substrate, compared with the conventional substrate heat treatment method using a furnace There are advantages to be able to.

At this time, in the substrate processing apparatus, it is required that the radiation emitted from the heat source reaches the substrate uniformly in order to process the substrate, and the quality of the thin film on the substrate can be determined through such a uniform heat treatment process.

Particularly, in processing a substrate arranged in a roll type in the substrate processing apparatus, it is required that the radiation emitted from the heat source unit is uniformly transferred to the outer surface and the inner surface of the substrate arranged in the roll type.

However, due to the limitation of the space in which the heat source unit is mounted in the conventional substrate processing apparatus, a region where the radiation emitted from the heat source unit can not reach the substrate is generated.

Thus, uniform thermal conductivity is not ensured over the entire area of the substrate, resulting in a problem that the quality of the thin film formed on the substrate is lowered and the quality of the finally produced product is lowered. Thereby reducing the efficiency of the system.

On the other hand, graphene has become an important model for studying various low-dimensional nano phenomena as a conductive material having a thickness of one layer of atoms while carbon atoms form a honeycomb arrangement in a two-dimensional phase. And graphene is not only very structurally and chemically stable, but also a very good conductor that can move electrons about 100 times faster than silicon and can flow about 100 times more electrons than copper Was predicted.

Graphene is made up of carbon, which is a relatively light element, and it is very easy to fabricate 1D or 2D nanopatterns. Particularly, by utilizing these advantages, not only the semiconductor-conductor properties can be controlled, but also a wide variety of functional devices such as sensors, memories, and the like can be manufactured by utilizing the variety of the chemical defects of carbon.

However, as mentioned above, although graphene has excellent electrical / mechanical / chemical advantages, a realistic mass synthesis method that can be applied to practical commercial applications is not yet introduced. Conventionally, a method of mechanically crushing graphite and dispersing it in a solution phase and then making it into a thin film by self-assembly phenomenon is known. In this case, although there is an advantage of low cost, many graphene pieces are stacked and connected to each other, , The mechanical properties did not meet expectations. Also, it is known that it is possible to manufacture a graphene thin film having a conductivity comparable to that of a metal by introducing a large area graphene thinning technique by a recently introduced chemical vapor deposition method. However, this is also required to have a high cost and a relatively high There is a problem that a process temperature is required.

KR 2010-0111298 A1

The present invention provides a substrate processing apparatus capable of increasing the quality of a thin film formed on a substrate by uniformly heating the entire region of the substrate arranged in a roll type.

The present invention provides a substrate processing apparatus capable of easily transmitting radiation to all sides of a substrate arranged in a roll type.

The present invention provides a substrate processing apparatus capable of increasing the efficiency and productivity of a process facility.

The present invention provides a substrate processing apparatus capable of mass-producing graphene by rapid thermal processing for commercialization of a graphene thin film.

A substrate processing apparatus according to an embodiment of the present invention includes a processing chamber for forming a processing space of a roll-shaped substrate, a heating unit including a first heating unit and a second heating unit disposed at the outermost portion and the center of the processing space, And a susceptor unit extending vertically between the first heating unit and the second heating unit and dividing the processing space in at least one direction in a horizontal direction.

The second heating unit includes a second heat source positioned at a central region of the processing chamber to face the horizontal sides of the processing chamber relative to the processing chamber; And a second reflecting portion disposed on an inner side of the second heat source portion.

Wherein the second reflector extends in the vertical direction and is disposed in contact with the inner wall of the processing chamber, the second heat source extending in the vertical direction and passing through the inner wall, As shown in FIG.

Wherein the second heat source unit is formed in a multi-tube structure extending in one direction and forms a passage therein; And a heat source disposed on the passage.

The heat source may be provided with a locally controlled calorific value.

Wherein the heat source comprises: a first heat generating unit for generating a first heat generating amount; And a second heat generating unit for generating a heat generation amount lower than the first heat generating amount, wherein the first heat generating unit and the second heat generating unit may be formed in one direction.

And protrusions protruding toward the heat source may be formed on an inner circumferential surface of the tube, which is disposed close to the heat source.

The susceptor unit may include a plurality of susceptors for dividing the processing space into a plurality of spaces between the first heating unit and the second heating unit.

The susceptor unit may include a first susceptor disposed between the first heating unit and the second heating unit, and a second susceptor disposed between the first susceptor and the second heating unit.

The height of the first susceptor in the up-and-down direction may be greater than the height of the second susceptor in the up-down direction.

At both ends of the first susceptor, a communication member for communicating the process spaces divided by the first susceptor may be disposed.

Each of the first susceptor and the second susceptor may be formed by stacking a plurality of pieces in a vertical direction.

A support unit which supports the substrate in the up-and-down direction and at least a part of which can be moved inward and outward of the process chamber, the support unit comprising a pair of support members spaced apart from each other in the up- And a fixing member connected to the pair of supporting members to fix the substrate.

The widths of the end regions facing each other of the pair of support members may be smaller than the widths of the end regions facing the end portions.

The fixing member can fix the substrate so that the substrate surrounds the end regions facing each other.

Wherein the fixing member has a first fixing frame fixed at both ends of the pair of supporting members and fixing one end of the substrate, and a second fixing frame arranged parallel to the first fixing frame, 2 fixed frame.

And a fixing pin inserted into the fixture, the fixture being formed in a region of the first fixing frame and the second fixing frame, which are in contact with the pair of supporting members, passing through in the horizontal direction.

A support unit that supports the substrate in a vertical direction and at least a part of which can be moved inwardly and outwardly of the process chamber, the support unit comprising: a pair of support members spaced apart from each other in the vertical direction; And a rod for interconnecting and supporting the pair of support members, wherein a concave and a convex portion for allowing a linear substrate to be inserted and fixed can be formed at opposite ends of the pair of support members.

Either the first susceptor or the second susceptor may be disposed in contact with at least a part of the inner side surface of the pair of supporting members.

The process chamber may be connected to a gas supply unit for supplying at least one of a process gas and a cooling medium into the process chamber.

Wherein the gas supply unit comprises: a cooling medium supply unit connected to a central portion in the horizontal direction at an upper portion of the processing chamber; And a process gas supply unit spaced apart from the central portion.

A cooling medium circulation path in which a cooling medium can circulate is formed in the second reflection part, the cooling medium supply part is provided outside the second reflection part, and the cooling medium supply device stores the cooling medium; And a cooling medium diesel pipe interconnecting the cooling medium feeder and the cooling medium circulation path.

Wherein the process gas supply unit includes a process gas supply member located between the first heating unit and the second heating unit inside the processing chamber; A process gas supply unit provided outside the process chamber for supplying a process gas to the process gas supply member; And a process gas supply pipe interconnecting the process gas supply device and the process gas supply member.

According to the substrate processing apparatus in accordance with the embodiment of the present invention, the heating unit and the susceptor unit are arranged so that the heat source can uniformly reach all the surfaces of the substrate arranged in the roll type. Accordingly, heat can be uniformly transferred to the entire area of the substrate arranged in a roll type, thereby increasing productivity and efficiency of the process.

That is, the heating unit is disposed so as to surround the substrate from the inner surface and the outer surface of the substrate arranged in the roll type, so that the substrate is arranged in the hollow formed by the heating unit. Thus, the inner surface and the outer surface of the substrate face each different heating unit, and the heating efficiency of the substrate can be increased.

As described above, all the surfaces of the substrate can be uniformly heated, thereby suppressing or preventing the deterioration of the partial area of the substrate and the generation of the cold spot, and the quality of the finally produced product can be increased.

In addition, the increase in the quality of the product can increase the efficiency and productivity of the process equipment due to the increase in the yield of the process.

1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention.
2 is a cutaway AA 'view of the substrate processing apparatus of FIG.
3 is a cross-sectional view taken along the line BB 'of the substrate processing apparatus of FIG.
Fig. 4 is a drawing showing a second block unit and a second heating unit of the substrate processing apparatus according to the embodiment of the present invention.
FIG. 5 is a view for explaining an arrangement state of a heating unit, a susceptor unit and a substrate according to an embodiment of the present invention, and a heat transfer state of the substrate through the arrangement.
6 is a cross-sectional view illustrating a second heat source unit according to an embodiment of the present invention.
7 is a view for explaining a susceptor unit according to an embodiment of the present invention.
8 is a view for explaining a support unit according to an embodiment of the present invention.
9 is a cross-sectional view for explaining the fixing state of the substrate to the support unit according to the embodiment of the present invention.
10 is a view for explaining a support unit according to another embodiment of the present invention.
11 is a view for explaining a gas supply member according to an embodiment of the present invention and a modification thereof.

Before describing the embodiments of the present invention in detail with reference to the accompanying drawings, it is to be understood that the invention is not limited to the details of construction and the arrangement of the elements described in the following detailed description or illustrated in the drawings. The invention may be embodied and carried out in other embodiments, and may be carried out in various ways.

In addition, throughout the specification, when an element is referred to as "including " an element, it means that the element may include other elements, not excluding other elements unless specifically stated otherwise.

Hereinafter, a substrate processing apparatus and a substrate processing method using the same according to an embodiment of the present invention will be described with reference to FIGS. 1 to 11. FIG.

FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a cutaway A-A 'of the substrate processing apparatus of FIG. 1, and FIG. 3 is a B-B' sectional view of the substrate processing apparatus of FIG. Fig. 4 is a drawing showing a second block unit and a second heating unit of the substrate processing apparatus according to the embodiment of the present invention. FIG. 5 is a view for explaining an arrangement state of a heating unit, a susceptor unit and a substrate according to an embodiment of the present invention, and a heat transfer state of the substrate through the arrangement. 6 is a cross-sectional view illustrating a second heat source unit according to an embodiment of the present invention. 7 is a view for explaining a susceptor unit according to an embodiment of the present invention. 8 is a view for explaining a support unit according to an embodiment of the present invention. 9 is a cross-sectional view for explaining the fixing state of the substrate to the support unit according to the embodiment of the present invention. 10 is a view for explaining a support unit according to another embodiment of the present invention. 11 is a view for explaining a gas supply member according to an embodiment of the present invention and a modification thereof.

1 to 3, the substrate processing apparatus 1 according to the embodiment of the present invention is an apparatus capable of uniformly performing heat treatment on the entire surface of a substrate S arranged in a roll type, A first heating unit 2100 and a second heating unit 2500 disposed at the outermost and central portions of the processing space, respectively, for forming a space (hereinafter referred to as processing space) in which the substrate S is processed , And a susceptor unit (250) which is disposed so as to extend vertically between the first heating unit (2100) and the second heating unit (2500) (3000).

The substrate processing apparatus 1 according to the embodiment of the present invention includes a support unit 4000 for supporting the substrate S in a roll type in the vertical direction from the inside or the outside of the processing chamber 1000, ) To the processing space of the processing chamber 1000. The transfer unit 7000 may be a microprocessor.

The substrate processing apparatus 1 according to the embodiment of the present invention is connected to the processing chamber 1000 to supply at least one of the processing gas P · G and the cooling medium And a gas supply unit for supplying the gas.

That is, the substrate processing apparatus 1 according to the embodiment of the present invention can be constituted by an apparatus for uniformly processing the entire area of the substrate S arranged and forming a curved surface in a roll shape in the processing space.

Hereinafter, the fact that other structures are arranged on the basis of a specific configuration means a direction toward the center of the processing space of the processing chamber 1000, and the fact that they are arranged on the outer side means that the processing chamber 1000 is located on the outer side of the processing space, Means the direction toward the inner wall of the chamber 1000.

The processing chamber 1000 is provided with a processing space for receiving and heating the substrate S therein, and provides a vacuum heating space. The shape of the processing chamber 1000 may represent a hollow hollow box shape. In particular, the process chamber 1000 may exhibit a hollow tubular shape to facilitate placement of internal structures for processing a cylindrical substrate S. In addition, the processing chamber 1000 may be integrally formed as a single body, but may have one or more separate and connected or coupled assembly bodies. In this case, a sealing member (not shown) may additionally be provided at a connection portion between the components. Accordingly, energy required for heating or cooling the substrate S can be reduced.

Here, the processing chamber 1000 according to the embodiment of the present invention forms a frame of the processing space and includes a chamber body 1100 having at least a part of the surfaces extending in the up-and-down direction and the horizontally- A block unit 1300 which is disposed in contact with the open face of the chamber body 1100 and a plurality of openings formed on the open face of the chamber body 1100 in the vertical direction, And a door 1500 provided thereon.

The chamber body 1100 may be used as a fundamental structure of the processing chamber 1000, such that both side surfaces in the up-and-down direction and in the horizontal direction are opened and provided with special features of the processing space. That is, when the processing chamber 1000 has a hexahedral structure, the chamber body 1100 may have a structure in which each of the faces of the hexahedral body is at least substantially open.

The door 1500 is provided to form a conveying path of the substrate S while opening and closing one surface of the chamber body 1100 except the surface on which the block unit 1300 to be described later is contacted. That is, the door 1500 is detachably provided from at least one side of the processing chamber 1000 so that the processing space and the outside of the processing chamber 1000 can communicate with each other. At this time, the door 1500 of the present invention may be provided on one surface of the chamber body 1100 which is open in the vertical direction and the horizontal direction.

The block unit 1300 is provided to be in contact with one side of the chamber body 1100 in the up-and-down direction and the open side in the horizontal direction, and is formed such that one side of the chamber body 1100, . The block unit 1300 includes a first block unit 1310 disposed in contact with an opening in the horizontal direction of the chamber body 1100 and a second block unit 1310 disposed in contact with the opening face of the chamber body 1100 in the up- And a block unit 1330.

The first block portion 1310 may include a plurality of side blocks 1310a, 1310b, 1310c, and 1310d so as to be detachably attachable to the lateral sides of the chamber body 1100 in the horizontal direction. The side blocks 1310a, 1310b, 1310c, and 1310d include first to fourth side blocks 1310a, 1310b, 1310c, and 1310d that are in contact with four open sides in the horizontal direction of the chamber body 1100, And the first to fourth side blocks 1310a, 1310b, 1310c, and 1310d are disposed to face the chamber body 1100, and one side facing the chamber body 1100 and the other side facing the chamber body 1100 The chamber body 1100 and the first blocks 1311a, 1311b, 1311c, and 1311d with the first blocks 1311a, 1311b, 1311c, and 1311d and the first blocks 1311a, 1311b, 1311c, And second blocks 1313a, 1313b, 1313c, and 1313d formed with opposite surfaces. In describing the first blocks 1311a, 1311b, 1311c and 1311d and the second blocks 1313a, 1313b, 1313c and 1313d, one of the plurality of side blocks 1310a, 1310b, 1310c and 1310d is referred to as a reference The first blocks 1311a, 1311b, 1311c, and 1311d and the second blocks 1313a, 1313b, 1313c, and 1313d will be described. At this time, the first blocks 1311a, 1311b, 1311c and 1311d and the second blocks 1313a, 1313b, 1313c and 1313d to be described are identical to the first to fourth side blocks 1310a, 1310b, 1310c and 1310d This applies.

The second block portion 1330 may contact the other surface of the upper and lower portions of the chamber body 1100 that is opposite to the one surface of the door 1500 where the door 1500 is in contact with to close the opened second surface of the chamber body 1100.

The heating unit 2000 is disposed in the processing chamber 1000 and is provided to uniformly heat the substrate S and the susceptor unit 3000 and is disposed at the outermost portion of the processing space in the processing chamber 1000 A first heating unit 2100, and a second heating unit 2500 disposed at the center of the processing space. That is, the first heating unit 2100 is disposed apart from the outer surface of the substrate S arranged in a roll shape in the processing space, and the second heating unit 2500 is disposed apart from the inner surface of the substrate S, ) Can be uniformly heat-treated.

The first heating unit 2100 is disposed to penetrate at least any one of the side walls in the horizontal direction of the processing chamber 1000 and is provided for heating the outer surface of the substrate S and the susceptor unit 3000. That is, the first heating unit 2100 includes a first heat source unit 2110 and a second heat source unit 2110, which are located at least one of the four directions facing the horizontal sides of the processing chamber 1000, And a first reflecting portion 2130 disposed outside the first heat source portion 2110. The first heat source 2110 includes a first heat source 2111 for generating radiation and a second window 2111 for surrounding the first heat source 2111 and transmitting the radiation emitted from the first heat source 2111 to the outside. (2113).

The first heat source unit 2110 is provided for heating the suscepter unit 3000 by being positioned at at least one of the four directions facing the lateral sides of the processing chamber 1000. The first heat source unit 2110 may extend in the horizontal direction so that at least one end of the first heat source unit 2110 passes through a side where the first block unit 1310 is opened. More specifically, the first heat source unit 2110 is disposed on the plane of the processing chamber 1000 in parallel with the side faces 1310a, 1310b, 1310c, and 1310d facing the lateral sides of the processing chamber 1000 in the horizontal direction 1311b, 1311c, and 1311d in the direction intersecting one side of the first blocks 1311a, 1311b, 1311c, and 1311d that are extended in the direction of the axis of the chamber body 1100 and in contact with the chamber body 1100, . The first heat source unit 2110 may include a plurality of heat source units 2110a, 2110b, 2110c, and 2110d disposed in the first blocks 1311a, 1311b, 1311c, and 1311d.

Here, at least one of a tungsten halogen lamp, a carbon lamp, and a ruby lamp may be used as the first heat source 2111, and various shapes such as a linear shape and a bulb shape may be used. For example, in the case of using a linear heat source, the plurality of first heat source units 2110 may be arranged in parallel at regular intervals. A portion of the surface of the first heat source 2111 may be formed with a reflector (not shown) separately from the first reflector 2130 described later. In the case of the linear heat source, the radiation is radially emitted. Since the susceptor unit 3000 and the substrate S to be heated are arranged to face the heat source, it is necessary to control the traveling direction of the radiation emitted from the heat source to increase the heating efficiency . Therefore, when a reflector (not shown) is formed on a part of the surface of the heat source to reflect the radiation to the substrate S, the radiation light radiated from the heat source is condensed toward the substrate S in the same manner as the first reflector 2130 . Such a reflector may be formed of a material having a high reflectance capable of reflecting radiation, and may be formed of a metal such as ceramic, Ni, or Ni / Au alloy.

The first window 2113 is used to protect the first heat source 2111 and may be formed of a material capable of transmitting the radiation emitted from the first heat source 2111. Accordingly, the first window 2113 can be formed of quartz, sapphire, or the like having excellent transmittance and excellent heat resistance. The first window 2113 may be formed in a hollow shape so that the first heat source 2111 may be disposed therein. In order to facilitate insertion and removal of the first heat source 2111 in the first window 2113, . The cross-sectional shape may be formed in various shapes such as a circle, an ellipse, and a polygon. In particular, if the first window 2113 has a circular cross-sectional shape, it is possible to reduce the influence of the internal pressure of the processing chamber 1000, thereby extending the replacement cycle and reducing the maintenance cost. The first window 2113 may be inserted into the concave groove 2133 of the first reflecting portion 2130 to be described later and at least a part of the first window 2113 may be mounted in the processing chamber 1000 while being surrounded by the concave groove 2133.

The first reflecting portion 2130 is provided in the processing space to concentrate the radiation light emitted from the first heat source portion 2110 toward the susceptor unit 3000 and the substrate S, The first heat source 2110 may be disposed in contact with the inner wall of the processing chamber 1000 to surround at least a part of the first heat source 2110. [ That is, the first reflecting portion 2130 is disposed to face the contact surface 2131 and the contact surface 2131, which are in contact with one surface of the second block 1313a, 1313b, 1313c, and 1313d of the first block portion 1310 And a reflecting surface disposed to surround at least a part of the outer side of the first heat source 2110. At this time, the contact surface 2131 may be formed flat to be in contact with one surface of the second blocks 1313a, 1313b, 1313c, and 1313d and may be disposed on one surface of the second blocks 1313a, 1313b, 1313c, and 1313d A plurality of concave grooves 2133 corresponding to the number of the first heat source units 2110 mounted on the first blocks 1311a, 1311b, 1311c and 1311d and a plurality of concave grooves 2133 in the vertical direction And a plurality of connection surfaces 2135 interconnecting the plurality of connection surfaces 2135 with each other. In other words, the plurality of concave grooves 2133 may be formed in a semicircular shape in cross section so as to surround at least a part of the outer side of the first heat source portion 2110, and the connecting surfaces 2135 may be disposed in the first heat source portion 2110, The first reflecting portion 2130 can be formed by interconnecting the concave grooves 2133 into which the first reflecting portion 2130 is inserted. Here, the material of the first reflecting portion 2130 is not particularly limited, but it is preferable to use a material capable of reflecting the radiation emitted from the first heat source 2110. For example, a material such as ceramic or Ni Or a metal material such as Ni / Au alloy.

The second heating unit 2500 is arranged on the inside of the first heating unit 2100 in the substrate processing space with respect to the processing chamber 1000 to heat the susceptor unit 3000 and the substrate S . Specifically, the second heating unit 2500 may be disposed inwardly from the inner surface of the first heating unit 2100 and disposed in contact with the inner wall of the processing chamber 1000.

The second heating unit 2500 may include a second heat source unit (not shown) positioned in the central region of the processing chamber 1000 to face the horizontal sides of the processing chamber 1000 with respect to the processing chamber 1000 And a second reflector 2530 disposed on the inner side of the second heat source 2510. That is, the arrangement relationship between the first heating unit 2100 and the second heating unit 2500 in a state where the susceptor unit 3000 and the substrate S are removed from the processing space will be described. The first reflecting portion 2130, the first heat source portion 2110, the second heat source portion 2510, and the second reflecting portion 2530 may be arranged in the order from the inner wall to the inner side with respect to the inner wall of the first reflecting portion 2130, have. Thus, the second heating unit 2500 can heat the susceptor unit 3000 and the substrate S in regions different from the first heating unit 2100. That is, when the first heating unit 2100 heats the outer surface of the susceptor unit 3000 and the substrate S, the second heating unit 2500 heats the inner surface of the susceptor unit 3000 and the substrate S It can perform a role of heating.

The second reflector 2530 extends in the vertical direction and is configured to be in contact with the inner wall of the process chamber 1000. More specifically, the second reflector 2530 includes a second reflector 2530 facing the chamber body 1100 of the process chamber 1000, And may be mounted on one side of the block portion 1330. The second reflective portion 2530 may be disposed at the center of the processing space so as to face the horizontal sides of the processing chamber 1000 in the processing space. At this time, the shape of the second reflecting portion 2530 is not limited, but may be provided in a cylindrical shape corresponding to the substrate S arranged in a roll shape. In addition, since the second reflecting portion 2530 reflects the radiation of the second reflecting portion 2530, the second reflecting portion 2530 may be formed in a vertically open tube shape because it is concentrated on the surface of the second reflecting portion 2530.

The second heat source unit 2510 extends vertically and is arranged to penetrate the inner wall of the processing chamber 1000 and is disposed to surround the outer surface of the second reflecting unit 2530. That is, the second heat source 2510 is provided outside the second reflector 2530 to heat the susceptor unit 3000 and the substrate S. The second heat source unit 2510 may extend in the vertical direction and one end may pass through one surface of the second block unit 1330 and be disposed in the process space. The second heat source units 2510 may be spaced apart from each other along the outer surface of the second block unit 1330 at a position spaced apart from the outer surface of the second block unit 1330 by a predetermined distance. That is, when viewed from a plane of the processing chamber 1000, the second heat source unit 2510 may be disposed so as to surround the second reflecting unit 2530 at the same distance radially from the center of the processing space.

Meanwhile, the second heat source 2510 is formed in a multi-tube structure extending in one direction, and includes a second window for forming a passage therein, and a second heat source 2514 disposed on the passage.

The second window includes an outer window 2511 forming a passage therein and an inner window 2512 disposed in the passage of the outer window 2511. The inner window 2512 may be provided to have an outer diameter smaller than the inner diameter of the outer window 2511 so as to be inserted into the outer window 2511. [ The reason why the second window is formed by the double pipe structure of the outer window 2511 and the inner window 2512 is that the second heat source 2510 is disposed close to the second heat source 2510 disposed in the central region of the processing chamber 1000 The external window 2511 can be prevented preferentially when the disposed inner window 2512 is broken.

The second window may be made of the same material as the first window 2113 described above, and the material of the second window will not be described again.

The second heat source 2514 is disposed in the innermost passageway of the second window, specifically, in the passageway formed by the inner window 2512. The second heat source 2514 may include a first heat generating unit 2514a forming a first heat generating amount and a second heat generating unit 2514b forming a heat generating amount lower than the first heat generating amount, The first heat generating portion 2514a and the second heat generating portion may be formed so as to intersect with each other in one direction in which the second heat source portion 2510 is extended. The reason why the second heat source 2514 is formed by the first heat generating portion 2514a and the second heat generating portion 2514b having different heat generating amounts is as follows. The heat source that is emitted from the second heat source 2514 disposed upright in the vertical direction is radially emitted on the basis of the arrangement characteristic of the second heat source 2514 so that the second heat source 2514 In the vertical direction toward the outer side. Accordingly, a temperature deviation also occurs in the susceptor unit 3000 and the substrate S to which the second heat source 2514 is heated. The second heat source 2514 may include a temperature sensor for sensing the temperature of the second heat source 2514 so that the amount of heat generated by the second heat source 2514 may be locally adjusted when a temperature deviation is generated from the temperature sensor. It is not easy to sense the temperature of the heat source generated in the vertical direction of the second heat source 2514. [ Accordingly, the second heat source 2514 of the present invention constitutes the second heat source 2514 by the first heat generating portion 2514a and the second heat generating portion 2514b, which have locally controlled heat amounts, in order to solve the above problems. Since the second heat source 2514 is constituted by the first heat generating portion 2514a and the second heat generating portion 2514b so that the second heat generating portion 2514b between the pair of first heat generating portions 2514a is located on both sides The temperature is compensated by the first heat generating portion 2514a of the second heat source 2514 so that uniform heat can be generated in all regions based on the extending direction of the second heat source 2514. [

The first heat generating unit 2514a and the second heat generating unit 2514b may be formed of the same material as the first heat source 2111 or may be a filament heat source capable of controlling the heat generation amount. Accordingly, when a filament type heat source is used, the first heat generating portion 2514a may be a coil type, and the second heat generating portion 2514b may be formed in a wire form to constitute a first heat source 2111. [

On the other hand, a protrusion 2513 protruding toward the second heat source 2514 may be formed on the inner circumferential surface of the tube, which is disposed close to the second heat source 2514 of the second window. The protrusion 2513 supports the lower end of the first heat generating portion 2514a of the second heat source 2514 to solve the problem that the first heat generating portion 2514a strikes.

The susceptor unit 3000 is disposed in the processing chamber 1000 to heat the substrate S away from the first heating unit 2100 and the second heating unit 2500, Or a combination of a plurality of pieces. That is, the susceptor unit 3000 includes a plurality of susceptors that allow the processing space to be divided into a plurality of spaces between the first heating unit 2100 and the second heating unit 2500 in the processing space. That is, the susceptor unit 3000 suppresses the phenomenon that the substrate S is directly exposed to the radiation light emitted from the heat sources 2110 and 2510 of the heating unit 2000, and thus the radiation is reflected by the substrate S And is disposed between the heat source units 2110 and 2510 and the substrate S and serves to cut off the heat source units 2110 and 2510 and the substrate S.

In the present invention, the susceptor unit 3000 includes a first susceptor 3100 disposed between the first heating unit 2100 and the second heating unit 2500, a first susceptor 3100 disposed between the first susceptor 3100 and the second heating unit 2500, The second susceptor 3300 disposed between the heating units 2500 can divide the processing space into a plurality of processing spaces in the horizontal direction. However, the number of processing spaces divided by the suscepter unit 3000 is not limited to the embodiment of the present invention, and can be variously changed.

The susceptor unit 3000 is heated by the radiation of the heat sources 2110 and 2510 and indirectly heats the substrate S by generating radiant heat so that the radiation is reflected from the substrate S, It is possible to reduce the time and power consumed in heating the heat exchanger. The susceptor unit 3000 may be formed of graphite or silicon carbide (SiC) coated graphite, silicon carbide, silicon nitride (SiC), or the like, which is excellent in thermal conductivity and heat absorption rate so as to partially indirectly heat the substrate S. Silicon nitride, alumina (Al2O3), aluminum nitride, and quartz.

The first susceptor 3100 is spaced inwardly from the first heating unit 2100 and disposed in the processing space. The first susceptor 3100 is spaced inward of the first heat source 2110 to divide the processing space first. The outer surface of the first susceptor 3100 is disposed opposite to the first heat source 2110 and the inner surface of the first susceptor 3100 is disposed on the outer surface of the substrate S or on the outer surface of the second susceptor 3300 And can be disposed facing the outer surface. Accordingly, the first susceptor 3100 is heated by the radiation emitted from the first heat source 2110, and can transmit heat to the outer surface of the substrate S. At this time, the first susceptor 3100 may be supported by the chamber body 1100 and disposed in the processing space, and the lower end of the first susceptor 3100 may be disposed in a region that is not open at the bottom surface of the chamber body 1100 And the upper end of the first susceptor 3100 can be supported in an area that is not open at the inner upper surface of the chamber body 1100. [

A communication member 3500 may be provided between the first susceptor 3100 and the chamber body 1100 to communicate process spaces primarily divided by the first susceptor 3100 to each other.

The communication member 3500 is provided to mutually communicate the process space divided by the first susceptor 3100 and is provided at the end of the first susceptor 3100 to connect the first susceptor 3100 and the chamber 3100. [ And may be disposed between the body 1100. That is, the communication member 3500 may be provided at both end portions of the first susceptor 3100 in the form of a tube having open top and bottom portions. At this time, at least one communication hole 3550 may be formed in the side wall of the communication member 3500 through the wall of the communication member 3500. That is, the communication hole 3550 formed in the communication member 3500 communicates between the first divided spaces of the first susceptor 3100, so that at the time of vacuum formation of the processing chamber 1000, It is possible to solve the problem that the gas remaining in the firstly divided spaces by the first susceptor 3100 is blocked by the first susceptor 3100 and is not discharged. In addition, the process gas P · G is supplied to the processing chamber 1000, and when discharged, the problem that the first susceptor 3100 is blocked and not discharged can be solved. In the present invention, the structure of penetrating the wall of the communication member 3500 is formed by a hole, but it is also possible to provide a wide penetrating portion such as a slit in addition to the hole to facilitate mutual communication.

The second susceptor 3300 is disposed on the inside of the first susceptor 3100 and the outside of the second heating unit 2500 in the processing space and is disposed in the processing space that is primarily divided by the first susceptor 3100 (Secondary division) can be performed again. That is, the outer surface of the second susceptor 3300 is disposed facing the inner surface of the first susceptor 3100 or the inner surface of the substrate S, and the inner surface of the second susceptor 3300 is disposed in the second heating unit 2500 As shown in FIG.

In the above-described susceptor unit 3000, a plurality of pieces 3000a, 3000b, and 3000c are vertically interconnected to form a first susceptor 3100 and a second susceptor 3300, respectively, in the processing space . At this time, the plurality of pieces 3000a, 3000b, and 3000c are formed by combining a plurality of tubular pieces 3000a, 3000b, and 3000c with upper and lower openings facing each other in the up and down direction in a concave- .

That is, as shown in FIG. 7B, the plurality of pieces 3000a, 3000b, and 3000c are formed such that a part of the lower end of the first piece 3000a protrudes downward and the lower end of the first piece 3000a A part of the upper part of the upper part of the facing second piece 3000b may protrude upward so that the protruded part is in contact with the unproverted part. 7C, the upper portion of the second piece 3000b facing the lower end of the groove shape of the central portion of the lower end of the first piece 3000a and the second piece 3000b 3000b may be combined with the upper end of the third piece 3000c facing the lower end to form the susceptor unit 3000. [

As described above, since the susceptor unit 3000 is configured by being divided into the plurality of pieces 3000a, 3000b, and 3000c, the susceptor unit 3000 can be easily separated from the processing chamber 1000 during maintenance of the apparatus . In addition, by using the susceptor unit 3000, only the pieces of the local area requiring maintenance can be replaced, thereby reducing the cost of maintenance. In the present invention, the cross-sectional shape of the susceptor unit 3000 formed by the plurality of pieces 3000a, 3000b, and 3000c is set to be circular. However, the shape of the susceptor unit 3000 is not limited thereto, Can be manufactured in such a shape that it can be arranged so as to face the outer surface and the inner surface of the substrate S which is formed in the roll type and extends in the vertical direction so as to divide the processing space into a plurality of horizontally arranged processing chambers in the processing chamber 1000 Satisfaction.

The arrangement state of the heating unit 2000, the susceptor unit 3000, and the substrate S and the heat transfer state of the substrate through the heating unit 2000, the susceptor unit 3000 and the substrate S will be described with reference to FIG.

5, the first heating unit 2100 of the heating unit 2000 in the substrate processing space is disposed apart from the outer surface of the substrate S arranged in a roll shape, and the second heating unit 2500 is disposed on the substrate S from the inner surface thereof. The first heat source 2110 of the first heating unit 2100 radiates a heat source to the outer surface of the substrate S and the second heat source 2510 radiates a heat source to the inner surface of the substrate S, (S) can be heated. When the susceptor unit 3000 is divided into the first susceptor 3100 and the second susceptor 3300 as described above, the first susceptor 3100 includes the first heat source unit 2110, And the second susceptor 3300 is disposed between the second heat source unit 2510 and the substrate S. The first susceptor 3100 and the second susceptor 3300 can absorb heat radiated from the first heat source 2110 and the second heat source 2510 and transfer the heat to the substrate S. [

At this time, the distance D1 between the first heat source 2110 and the first susceptor 3100 and the distance D2 between the first susceptor 3100 and the substrate S, The distance D4 between the portion 2510 and the second susceptor 3300 and the distance D3 between the second susceptor 3300 and the substrate S. [ The first heat source unit 2110 and the second heat source unit 2510 may be disposed on both sides of the first susceptor 3100 and the second susceptor 3100. In this case, when the spacing distance D1 and the distance D4 and the distance D2 and the distance D3 are set to the same value, The extent to which heat is transferred from the first susceptor 3100 and the second susceptor 3300 to the outer surface and the inner surface of the substrate S is similar to or similar to the degree to which the susceptor 3300 is heated, Or may be the same. Therefore, the entire surface of the substrate S can be uniformly heated.

8-11, a support unit 4000 according to an embodiment of the present invention is disposed between the first heating unit 2100 and the second heating unit 2500 in the processing space of the processing chamber 1000, To stably support the substrate S in a state of being separated from the heating unit 2100 and the second heating unit 2500 and to move the substrate S in and out of the processing chamber 1000 .

The support unit 4000 includes a pair of support members 4100 arranged to be spaced apart from each other in the vertical direction and a fixing member 4300 connected to the pair of support members 4100 to fix the substrate.

The pair of support members 4100 are divided into a first support member 4100a and a second support member 4100b and the first support member 4100a and the second support member 4100b are vertically And are spaced apart from each other by a predetermined distance. Since the pair of support members 4100 must be disposed in the processing chamber 1000 so as to surround the outside of the second heating unit 2500, have. At this time, the widths of the end regions where the first support member 4100a and the second support member 4100b face each other may be smaller than the widths of the end regions facing each other and the end regions facing each other.

More specifically, when the first support member 4100a and the second support member 4100b are disposed on the relatively upper portion of the first support member 4100a, the first support member 4100a and the second support member 4100b, The opposite end of the support member 4100b is the lower end of the first support member 4100a and the upper end of the second support member 4100b. At this time, when the lower end region of the first support member 4100a comes to the lower end portion from the upper end region of the first support member 4100a, a step is formed on the outer and inner surfaces so that the width of the lower end region is smaller Respectively. Thus, the substrate S can be placed in contact with the pair of support members 4100 so as to surround the end regions facing each other. The pair of support members 4100 may have a first guide surface 4110 and a second guide surface 4130 formed by steps on the outer side and the inner side, respectively. The substrate S may be arranged to surround the end regions by contacting the first guide surfaces 4110 of each of the pair of support members 4100. [

The fixing member 4300 may include a first fixing frame 4310 and a second fixing frame 4330. Both ends of the first fixing frame 4310 and the second fixing frame 4330 can be fixed to the outside of the pair of supporting members 4100, respectively. The first fixing frame 4310 and the second fixing frame 4330 may be arranged side by side so that one end and the other end of the substrate S may be fixed. One surface of the first fixing frame 4310 and the second fixing frame 4330 opposite to the pair of support members 4100 faces the first guide surface 4110 formed on the pair of support members 4100 And the substrate S can be fixed so as to surround the first guide surface 4110. In this case, In addition, the first fixed frame 4310 and the second fixed frame 4330 may function to maintain a gap between the pair of support members 4100. [

Fasteners 4315 and 4335 formed in the horizontal direction are formed in the regions of the first fixing frame 4310 and the second fixing frame 4330 which are in contact with the pair of supporting members and are inserted into the fasteners 4315 and 4335 The fixing pin 4350 is provided so that the fixing pin 4350 can press the first fixing frame 4310 and the second fixing frame 4330 to fix the substrate S to the pair of supporting members. 9, fasteners 4315 and 4335 are formed through the first fastening frame 4310 and the second fastening frame 4330 which are in contact with the pair of support members 4100, The first fixing frame 4310 and the second fixing frame 4330 can be fixed to the pair of supporting members 4100 by inserting the fixing member 4350 into the fixing members 4315 and 4335, And can be fixed to the pair of support members 4100.

On the other hand, the fixing holes 4350 may be formed in the substrate S so that the entire area of the first fixing frame 4310 and the second fixing frame 4330 is in contact with the substrate, . 9, a fixing hole is formed at the position of the substrate S corresponding to the fixtures 4315 and 4335 of the first fixing frame 4310 and the second fixing frame 4330, 4350 may be inserted into the fixtures 4315 and 4335 and the fixing holes to fix the substrate S and the fixing member 4300 to the pair of supporting members 4100. [ Fixtures 4315 and 4335 are further formed along the extending direction of the fixing member 4300 in order to increase the contact force between the substrate S and the fixing member 4300. The fixtures 4315 and 4335 And the both ends of the substrate can be stably brought into contact with the fixing member 4300 by the fixing pin 4350. [

The support unit 4000 according to another embodiment of the present invention includes a pair of support members 4100 that are spaced apart from each other in the vertical direction and a rod (not shown) that interconnects and supports the pair of support members 4200 ' And an uneven portion 4400 'for inserting and fixing a linear substrate is formed on the outer circumferential surface of the pair of support members 4200'. Here, the pair of support members 4200 provided in the support unit 4000 'according to another embodiment is the same as the pair of support members described above, and will not be described again.

The concave-convex portion 4400 'includes a plurality of grooves into which the linear substrate S can be fitted, and is formed on the first and second support members 4200a and 4200b, respectively. The groove provided in the recessed portion 4400 'may be formed to have a size that can cover at least a part of the outer circumferential surface of the linear substrate S'. When the linear substrate S 'is inserted into the groove, So that no space is formed between the substrate S 'and the grooves.

On the other hand, any one of the above-described susceptor units 3000 may be disposed in contact with at least a part of the inner side surface of the pair of support members 4100. More specifically, the second susceptor 3300 of the present invention can be supported with the substrate in the support unit 4000 and moved inside and outside the process chamber 1000. At this time, the outer surface of the second susceptor 3300 is brought into contact with the second guide surface 4130 of the pair of support members 4100 so that any one of the susceptor units 3000 in the support unit 4000 .

The substrate processing apparatus 1 formed as described above may be connected to a gas supply unit for supplying at least one of the processing gas (P G) and the cooling medium into the processing chamber 1000.

The gas supply unit includes a cooling medium supply unit 6000 connected to a central portion in a horizontal direction at an upper portion of the process chamber 1000 and a process gas supply unit 5000 disposed at an outer side from the center.

The process gas supply unit 5000 is a unit for supplying a gas containing carbon required for depositing graphene on the substrate S and includes a first heating unit 2100 and a second heating unit 2500 A process gas supply unit 5100 and a process gas supply unit 5100 which are provided outside the process chamber 1000 and supply a process gas to the process gas supply member 5500, And a process gas supply pipe 5300 interconnecting the process gas supply member 5500.

The process gas supply member 5500 may be disposed so as to be in contact with the inner upper surface of the process chamber 1000 to supply the process gas downward from the upper portion of the substrate disposed in the process space. At this time, a process gas guide hole 5550a is formed in the process gas supply member 5500 so that the process gas delivered from the process gas supply device 5100 can be circulated and discharged to the process space. 12, the process gas PG enters the process gas supply member 5550 and is supplied to the substrate S (hereinafter referred to as " S ") disposed in the X region between the first susceptor 3100 and the second susceptor 3300 (P < - >). That is, the process gas guide hole 5550a is formed between the X1 region between the first susceptor 3100 and the substrate S and the X2 region between the second susceptor 3300 and the substrate S, P &ge;

On the other hand, the process gas supply member 5500 may be provided with the process gas supply hole 5550b deformed as shown in FIG. 12 (b). That is, the process gas supply hole 5550b according to the modified example includes a first process gas supply hole 5551b and a second process gas supply hole 5553b, The holes 5551b supply gas to the X1 region between the first susceptor 3100 and the substrate S and the second process gas supply hole 5553b supplies gas to the X1 region between the second susceptor 3300 and the substrate S. [ The gas can be supplied to the X2 region of FIG. Since the first process gas supply hole 5551b and the second process gas supply hole 5553b are formed at positions corresponding to the regions X1 and X2, the process gas can be easily supplied to the substrate S, S) can be increased.

The cooling medium supply unit 6000 supplies a cooling medium for lowering the temperature of the component to suppress and prevent deterioration of the components of the substrate processing apparatus 1, So that the cooling medium can be supplied to the processing space. At this time, in the present invention, the cooling medium may be supplied into the second reflecting portion 2530 of the second heating unit 2500 to cool the configurations of the substrate processing apparatus 1. A cooling medium circulation path 2535 is formed in the second reflecting portion 2530 so that the cooling medium can circulate therein. The cooling medium supply portion 6000 includes a cooling medium feeder 6100 and a cooling medium feeder 6100) and a cooling medium circulation path (2535). The cooling medium gas piping 6300 is connected to the cooling medium supply pipe 6310 and the cooling medium circulation path 2535 from the cooling medium supply unit 6100 to the cooling medium circulation path 2535, And a cooling medium discharge pipe 6330 that forms a path through which the cooling medium is recovered to the cooling medium outlet 6100. A control valve 6500 may be provided in the cooling medium circulation pipe 6300 to control the cooling medium supply pipe 6310 connected to one cooling medium supply source 6100 and the cooling medium discharge pipe 6330.

Hereinafter, a method of depositing graphene on a substrate using the substrate processing apparatus 1 according to the embodiment of the present invention will be described.

First, the substrate S is fixed in a roll type to a supporting unit 4000 connected to the door 1500. That is, the conveying shaft driver 7300 of the conveyor 7000 is operated to lower the conveying shaft 7100 so that the door 1500 is separated from the chamber body 1100 in a noncontact manner, and the supporting unit 4000 is moved to the outside of the processing space . In the case of the plate-like substrate S, the substrate S is bent so that the substrate S along the first guide surface 4110 of the pair of support members 4100 is supported by a pair of rolls The substrate S may be fixed on the outer side of the member 4100 or the substrate S may be bent on the concave-convex portion 4400 'of the pair of support members 4200' And fixes the substrate S to the supporting unit 4000 'by fitting. Thus, the substrate S can be supported on the support unit 4000 in a state of being arranged in a roll type in the processing space. At this time, the substrate S may be formed of a metal such as Ni, Cu, Co, Mo, Mg, Pt, Ag, Cr, , Manganese (Mn), titanium (Ti), and tungsten (W) may be used.

When the substrate S is fixed to the supporting unit 4000, the conveying shaft 7100 is raised so that the door 1500 is brought into contact with the lower end of the chamber body 1100 so that the supporting unit 4000 is disposed in the processing space Thereby allowing the substrate S to be loaded into the processing space, and blocking the communication with the outside of the processing space.

Subsequently, the gas in the processing space is evacuated through the vacuum line connected to the processing chamber 1000 to evacuate the internal pressure of the processing chamber 1000. At this time, the internal pressure can be controlled in the range of 0.01 to 50 torr.

Next, the first heat source unit 2110 and the second heat source unit 2510 are operated to operate the process gas supply unit 5000 connected to the upper part of the processing chamber 1000 while heating the susceptor unit 3000, And the grains are deposited on the substrate S by supplying the gas P · G. That is, the first susceptor 3100 and the second susceptor 3300, which are spaced apart from the outer surface and the inner surface of the substrate S, The first susceptor 3100 and the second susceptor 3300 are operated by operating the first heat source unit 2110 and the second heat source unit 2510 provided separately from the outer surface of the first susceptor 3100 and the inner surface of the second susceptor 3300, (3300) is heated to 800 to 1050 占 폚, and a gas containing carbon such as CH4, C2H6, C2H2, C6H6 and the like can be injected as the process gas. As described above, the process gas P · G supplied through the process gas supply unit 5000 is supplied to the first susceptor 3100 and the second susceptor 3150 by the process gas guide hole 5550a formed in the process gas supply member 5500 Can be supplied to the processing space (X) formed by the second susceptor (3300) in an amount larger than another processing space. The unreacted gas and the residue are discharged through a process gas discharging member 5700 disposed opposite to the process gas supplier 5100.

A part of the radiation emitted from the first heat source 2110 of the first heating unit 2100 in the process of being deposited on the substrate S is reflected by the first reflector 2130, (3100). A part of the radiation emitted from the second heat source 2510 of the second heating unit 2500 is reflected by the second reflecting portion 2530 and irradiated to the second susceptor 3300. The first susceptor 3100 and the second susceptor 3300 are heated to a preset temperature by the radiation emitted from the heat source, and the first susceptor 3100 and the second susceptor 3300 are heated The substrate S is indirectly heated by heat transfer. At this time, the substrate S is divided by the first susceptor 3100 and the second susceptor 3300 in the processing chamber 1000, so that the susceptor unit 3000 is processed in a relatively small process space The heated first susceptor 3100 and the second susceptor 3300 are disposed apart from the outer surface and the inner surface of the substrate S while being constrained within the space X. [ Thus, the first susceptor 3100 and the second susceptor 3300 can be quickly and uniformly heated by the heat transfer (i.e., radiation or conduction) of the first susceptor 3100 and the second susceptor 3300 3300 can be kept constant without any variation, so that the temperature of the substrate S can be kept constant while the graphene is being deposited, so that the graphene thin film can be uniformly deposited. Further, since the substrate S is indirectly heated by heat transfer, it can be prevented from being damaged by being directly heated by the high temperature.

When the graphene thin film having a desired thickness is deposited on the substrate S, the operation of the heat source units 2110 and 2510 of the heating unit 2000 is stopped and the second reflective unit 2530 ) To lower the temperature of the internal structures of the processing chamber 1000. [0064] The processed substrate S can be unloaded to the outside of the processing chamber 1000 by being supported by the supporting unit 4000 at the opening of the door 1500.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms and the inventor may appropriately define the concept of the term in order to best describe its invention It should be construed as meaning and concept consistent with the technical idea of the present invention.

S: substrate 1: substrate processing apparatus
1000: processing chamber 2000: heating unit
2100: first heating unit 2110: first heat source unit
2130: first reflector 2300: second heating unit
2510: second heat source 2511: external window
2512: inner window 2513: projection
2514: second heat source 2514a: first heat source
2514b: second heat generating portion 2530: second reflecting portion
3000: susceptor unit 3100: first susceptor
3300: second susceptor 4000, 4000 ': supporting unit
5000: process gas supply unit 6000: cooling gas supply unit
7000: Feed unit

Claims

A processing chamber for forming a processing space of the roll-shaped substrate;
A first heat source disposed at the outermost portion and the center of the processing space and positioned at least at one of the four directions facing the horizontal sides of the processing chamber relative to the processing chamber and emitting the radiation, A first heating unit including a first reflecting portion disposed on an outer side of the first heat source portion and a second heating portion disposed on a central region of the processing chamber so as to face the horizontal sides of the processing chamber with respect to the processing chamber, A second heating unit including a second heat source unit for heating the first heat source unit and a second reflection unit disposed on the inside of the second heat source unit;
A susceptor unit extending vertically between the first heating unit and the second heating unit and dividing the processing space in at least one horizontal direction; And
A support unit for vertically supporting the substrate in the processing space, at least a part of which can be moved inward and outward of the processing chamber;
/ RTI >
A first susceptor disposed to be spaced apart from the substrate to indirectly heat the substrate between the first heating unit and the second heating unit; And a second susceptor spaced apart from the substrate to indirectly heat the substrate between the first susceptor and the second heating unit.

delete

The method according to claim 1,
Wherein the second reflective portion extends in the vertical direction, one end of the second reflective portion is disposed in contact with the inner wall of the processing chamber,
Wherein the second heat source portion is formed so as to extend in the vertical direction and penetrate the inner wall, and to surround the outer surface of the second reflecting portion.

The method according to claim 1,
The second heat source unit includes:
A window formed in a multi-tube structure extending in one direction and forming a passage therein; And
And a heat source disposed on the passage.

The method of claim 4,
Wherein the heat source is provided with a calorific value adjusted locally.

The method of claim 5,
The heat source may include:
A first heating unit for generating a first heating value; And
And a second heat generating unit for generating a heat generation amount lower than the first heat generation amount,
Wherein the first heat generating portion and the second heat generating portion are cross-formed in the one direction.

The method of claim 4,
Wherein protrusions protruded toward the heat source are formed on an inner circumferential surface of a tube of the window that is disposed close to the heat source.

The method according to claim 1,
Wherein a distance between the first heat source portion and the first susceptor and a distance between the first susceptor and the substrate are set to be equal to a distance between the second heat source portion and the second susceptor, Wherein the distance between the susceptor and the substrate is the same as the distance between the susceptor and the substrate.

delete

The method of claim 8,
Wherein a height of the first susceptor in a vertical direction is larger than a height in a vertical direction of the second susceptor.

The method of claim 8,
And a communication member for communicating the processing spaces divided by the first susceptor are disposed at both ends of the first susceptor.

The method according to any one of claims 8, 10 and 11,
Wherein each of the first susceptor and the second susceptor has a plurality of pieces stacked in a vertical direction.

The method according to claim 1,
The support unit includes:
A pair of support members spaced apart from each other in the vertical direction; And
And a fixing member coupled to the pair of support members to fix the substrate.

14. The method of claim 13,
Wherein a width of an end region facing each other of each of the pair of support members is formed smaller than a width of an end region opposing the end.

15. The method of claim 14,
Wherein the fixing member fixes the substrate such that the substrate surrounds the end regions facing each other.

16. The method of claim 15,
Wherein:
A first fixing frame fixed at both ends to the outside of the pair of supporting members and fixing one end of the substrate; And
And a second fixing frame provided parallel to the first fixing frame and fixing the other end of the substrate.

18. The method of claim 16,
Wherein the first fixing frame and the second fixing frame, which are in contact with the pair of supporting members,
And a fixing pin inserted into the fixture.

The method of claim 8,
A support unit that supports the substrate in the vertical direction and at least a part of which can be moved inward and outward of the processing chamber,
The support unit includes:
A pair of support members spaced apart from each other in the vertical direction;
And a rod interconnecting and supporting the pair of support members,
And a concave-convex portion for allowing a linear substrate to be inserted and fixed is formed at the opposite ends of the pair of support members.

The method according to claim 13 or 14,
Wherein either one of the first susceptor and the second susceptor is disposed in contact with at least a part of the inner side surface of the pair of supporting members.

The method according to claim 1,
Wherein the processing chamber is connected to a gas supply unit for supplying at least one of a processing gas and a cooling medium into the processing chamber.

The method of claim 20,
The gas supply unit includes:
A cooling medium supply unit connected to a central portion in the horizontal direction at an upper portion of the processing chamber; And
And a process gas supply unit that is disposed apart from the central portion toward an outer side.

23. The method of claim 21,
A cooling medium circulation path through which the cooling medium can circulate is formed inside the second reflecting section,
Wherein the cooling medium supply unit includes:
A cooling medium supply unit provided outside the second reflecting unit for storing the cooling medium; And
And a cooling medium flow pipe connecting the cooling medium supply unit and the cooling medium circulation path to each other.

23. The method of claim 21,
Wherein the process gas supply unit includes:
A processing gas supply member located between the first heating unit and the second heating unit inside the processing chamber;
A process gas supply unit provided outside the process chamber for supplying a process gas to the process gas supply member; And
And a process gas supply pipe interconnecting the process gas supply device and the process gas supply member.