KR101573035B1 - Apparatus for processing substrate - Google Patents

Apparatus for processing substrate Download PDF

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Publication number
KR101573035B1
KR101573035B1 KR1020150089837A KR20150089837A KR101573035B1 KR 101573035 B1 KR101573035 B1 KR 101573035B1 KR 1020150089837 A KR1020150089837 A KR 1020150089837A KR 20150089837 A KR20150089837 A KR 20150089837A KR 101573035 B1 KR101573035 B1 KR 101573035B1
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South Korea
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substrate
fixing member
fixing
upper plate
chamber
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KR1020150089837A
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Korean (ko)
Inventor
남원식
연강흠
송대석
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(주)앤피에스
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Priority to KR1020150089837A priority Critical patent/KR101573035B1/en
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Publication of KR101573035B1 publication Critical patent/KR101573035B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a substrate processing apparatus, comprising: a chamber in which a processing space is formed; A hollow susceptor arranged to extend in one direction in the chamber; A heat source unit provided on an inner wall of the chamber and surrounding at least an outer side of the susceptor; And a substrate supporting part provided on the inner side of the susceptor so as to be spaced apart from the susceptor and fixing the thin plate substrate in a roll shape, thereby facilitating the processing of a large area substrate.

Description

[0001] Apparatus for processing substrate [0002]

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of uniformly processing a large-area substrate.

In recent years, a rapid thermal processing (RTP) method has been widely used as a method of heat-treating a substrate or the like.

The rapid thermal processing method is a method of heating a substrate by irradiating the substrate with radiation (emitted light) emitted from a heat source such as a tungsten lamp. Such a rapid thermal annealing method can heat or cool the substrate quickly, and can easily control the pressure condition and the temperature band, thereby improving the heat treatment quality of the substrate, compared with the conventional substrate heat treatment method using a furnace There are advantages to be able to.

A conventional substrate processing apparatus in which a rapid thermal processing method is used includes a chamber for providing a space in which a substrate is mainly processed, a susceptor for supporting the substrate inside the chamber, a heat source for irradiating the substrate with the radiation to heat the substrate, A heating block connected to the chamber for mounting a heat source and a transmission window disposed at a connection portion between the heating block and the chamber and transmitting the radiation emitted from the heat source.

However, as the size of the substrate becomes larger, the volume of the substrate processing apparatus for processing the substrate is also increased sharply. In general, a substrate is horizontally loaded in a chamber, and accordingly, the size of a chamber in which a substrate is processed is increased, and a large space is required for installing the substrate. In addition, since a space for storing the substrate is further required, the equipment cost for coping with such a problem is increased, and the cost is reflected in the product, thereby reducing the price competitiveness.

Further, when a large-area substrate is loaded in the horizontal direction, the substrate is sagged in a downward direction due to its own load, so that it is difficult to uniformly process the entire substrate.

KR 2013-0098664 A

The present invention provides a substrate processing apparatus capable of easily processing a large-area substrate.

The present invention provides a substrate processing apparatus capable of increasing the efficiency and productivity of a process facility.

A substrate processing apparatus according to an embodiment of the present invention includes: a chamber in which a processing space is formed; A hollow susceptor arranged to extend in one direction in the chamber; A heat source unit provided on an inner wall of the chamber and surrounding at least an outer side of the susceptor; And a substrate supporting part provided inside the susceptor so as to be spaced apart from the susceptor and fixing the thin plate substrate in a roll shape.

The chamber defines the processing space, and includes a base frame, at least a part of which extends in the up-and-down direction and the horizontally-extending direction; A block provided on an open side of the base frame to form the processing space; And a gate formed on at least one of the blocks to open and close the processing space from the outside and to support the substrate supporting part.

The heat source unit may be provided on one side of the block forming the inner wall of the chamber, and a reflector may be provided between the block and the heat source unit.

The susceptor may be composed of a combination of a plurality of ring-shaped blocks with both ends open.

And a support shaft connected to the other side of the mount and supporting the mount in the chamber, and a support shaft connected to the other side of the mount, the support shaft supporting the substrate, And a driver provided outside the chamber to rotate the support shaft.

The substrate support includes an upper plate on which an inflow hole for introducing gas is formed, a lower plate spaced apart from the upper plate and formed with an outflow hole through which gas is discharged, and a rod connecting the upper plate and the lower plate to each other And a fixing member connected to the upper plate and the lower plate to fix the substrate to surround the body.

Wherein the fixing member includes a first fixing member disposed in parallel with the rod and having opposite ends fixed to the outer sides of the upper plate and the lower plate respectively and spaced apart from and spaced apart from the first fixing member, And a second fixing member fixed to the outer side of the lower plate, respectively.

The first fixing member may include a pair of fixing rods and a spacing member provided between the fixing rods to form a gap through which the one side of the substrate is inserted between the fixing rods.

The second fixing member may include a fixing rod having a fixture spaced along the length thereof, and a fixing pin inserted into the fixture to fix the other side of the substrate.

The second fixing member may be connected to be movable along at least a part of the circumferential direction of the upper plate and the lower plate.

The substrate support includes an upper plate on which an inflow hole for introducing gas is formed, a lower plate spaced apart from the upper plate and formed with an outflow hole for discharging gas, and a lower plate connected to the upper plate and the lower plate, And a fixing member that is connected to the upper plate and the lower plate and fixes the other side of the substrate so as to surround the rod.

The rod may be rotatably connected to either the upper plate or the lower plate.

The fixing member may include a fixing rod formed with a fixing member spaced apart along the longitudinal direction, and a fixing pin inserted into the fixing member and fixing the other side of the substrate.

The fixing member may be movably connected along at least part of the circumferential direction of the upper plate and the lower plate.

The substrate support may be movable along the direction of movement of the gate.

An outlet hole through which the gas is discharged may be formed in the cradle.

A temperature detector may be provided on at least one of the inner surface and the outer surface of the susceptor.

According to the substrate processing apparatus according to the embodiment of the present invention, the substrate can be easily disposed by arranging the substrate to surround the cylindrical substrate support. Even when the thickness of the substrate is thin, the substrate can be stably loaded without sagging phenomenon, and uniform processing can be performed over the entire substrate. The installation space can be reduced, and the space can be efficiently used and the equipment cost can be reduced.

1 is an exploded perspective view of a substrate processing apparatus according to an embodiment of the present invention;
2 is a sectional view taken along the line AA shown in Fig.
3 shows a susceptor according to an embodiment of the present invention.
4 is a view for explaining a temperature detection unit according to an embodiment of the present invention.
5 is a view showing a moving state of a substrate supporting part according to an embodiment of the present invention.
6 is a view showing a configuration of a substrate supporting unit according to an embodiment of the present invention.
7 is a view illustrating a state in which a substrate is mounted on a substrate support according to an embodiment of the present invention.
8 is a view showing a substrate supporting portion according to a modification of the present invention and a mounting state of the substrate.

Before describing the embodiments of the present invention in detail with reference to the accompanying drawings, it is to be understood that the invention is not limited to the details of construction and the arrangement of the elements described in the following detailed description or illustrated in the drawings. The invention may be embodied and carried out in other embodiments, and may be carried out in various ways.

Herein, it will be appreciated that the device or component orientation (e.g., "front", "back", "up", "down", "top" Quot ;, "left," " right, "" lateral," and the like) used herein are used merely to simplify the description of the present invention, It will be appreciated that the device or element does not indicate or imply that it should simply have a particular orientation. Also, terms such as " first "and" second "are used herein for the purpose of the description and the appended claims, and are not intended to indicate or imply their relative importance or purpose.

In addition, throughout the specification, when an element is referred to as "including " an element, it means that the element may include other elements, not excluding other elements unless specifically stated otherwise.

Hereinafter, a substrate processing apparatus and a substrate processing method using the same according to an embodiment of the present invention will be described with reference to the accompanying drawings.

1 is a cross-sectional view taken along line AA shown in FIG. 1, and FIG. 3 is a cross-sectional view illustrating a susceptor 150 according to an embodiment of the present invention. FIG. 4 is a view for explaining a temperature detecting unit according to an embodiment of the present invention, FIG. 5 is a view showing a moving state of a substrate supporting unit according to an embodiment of the present invention, FIG. FIG. 7 is a view showing a state in which a substrate is mounted on a substrate supporting part according to an embodiment of the present invention, FIG. 8 is a view showing a substrate supporting part according to a modification of the present invention, Fig.

Referring to FIG. 1, a substrate processing apparatus according to an embodiment of the present invention is an apparatus capable of processing a large-area substrate, for example, heat-treating the substrate, and forming a space (hereinafter referred to as a "substrate processing space" A heat source unit 130 provided in the chamber 100, a substrate support 200 for supporting the substrate in the chamber 100, and a substrate support 200 inside the chamber 100 And a susceptor 150 which is disposed on the substrate. With such a configuration, the substrate processing apparatus fixes the substrate so as to surround at least a part of the substrate support 200, and then treats the substrate, thereby enabling the processing of the large-area substrate. Herein, it is described that the substrate supporting part 200 is arranged in the vertical direction inside the chamber 100, but the substrate supporting part 200 may be arranged in the horizontal direction inside the chamber 100. [

The chamber 100 accommodates a substrate S therein and provides a substrate processing space for processing, e.g., heat treatment. Accordingly, the chamber 100 may be formed in a hollow box shape. The chamber 100 may be formed as a single body, but may be formed by interconnecting or assembling one or more components as in the present embodiment. The chamber 100 may have an assembly body that is separate and connected to or coupled to the top.

The chamber 100 may include a base frame 110 defining a processing space and a plurality of blocks 120 connected to the base frame 110 to seal the processing space and a gate 114 for opening and closing the processing space. have.

The base frame 110 is formed to open at least a part of the surfaces extending in the vertical direction and the horizontal direction and includes an upper frame 110a and a lower frame 110b having a rectangular frame shape, And a side frame 110c interconnecting the two side walls 110b. At this time, the side frames 110c can connect the corner portions of the upper frame 110a and the lower frame 110b, respectively. With such a configuration, the base frame 110 can form a rectangular parallelepiped-shaped processing space having upper and lower sides and open sides.

The plurality of blocks 120 are provided on the open side of the base frame 110 to form a process space and include an upper block 112a connected to the upper portion of the base frame 110, And a side block 112c connected to the side of the base frame 110, respectively.

The upper block 112a is detachably connected to an upper portion of the upper frame 110a to open or close the inside of the chamber 100. [ The upper block 112a may be formed in a shape corresponding to the upper frame 110a, for example, in the shape of a square plate, and a gas supply unit 120 for supplying a cooling gas and a substrate process gas may be provided on the upper block 112a . Accordingly, the upper block 112a may have a plurality of injection ports 121 and 123 for supplying gas, and the gas supply unit 120 will be described later.

The lower block 112b is connected to the bottom of the lower frame 110b and may be formed in a shape corresponding to the lower frame 110b, for example, a square plate shape. A through hole may be formed at the center of the lower block 112b to support the substrate supporting part 200 and to connect the gate 114 opened and closed when the substrate is carried in and out. The gate 114 may be formed in a shape corresponding to the through-hole, for example, in the shape of a circular plate, and a supporting shaft 210 supporting the substrate supporting part 200 may be connected to the center part so as to be rotatable. The gate 114 may be connected to an elevator 40 that moves the gate 114 vertically to open and close the through-hole. The elevator 40 is a well-known technique and will not be described in detail.

The lower block 112b may be formed with an exhaust port 116 for discharging the substrate processing gas from the cooling gas supplied into the chamber 100. [ The exhaust port 116 is connected to a vacuum forming member 140 provided outside the chamber 100 to discharge the cooling gas and the substrate process gas in the chamber 100 and to form a vacuum inside the substrate have.

The side block 112c may be formed in a rectangular frame shape so as to be connected to the upper frame 110a, the lower frame 110b, and the adjacent side frames 110c, which are adjacent to each other. At this time, a heat source unit 130 for processing the substrate may be connected to the inside of the side block 112c. The plurality of side blocks 112c are provided to face each other on each side of the base frame 110 and the heat source unit 130 provided in each side block 112c may be provided to surround the inside of the chamber 100 have.

A reflector 138 may be provided between the side block 112c and the heat source unit 130 to collect the radiation emitted from the heat source unit 130 toward the susceptor 150 side. The reflector 138 may be formed of a material having a high reflectance capable of reflecting the emitted light, and may be formed of a metal such as ceramic, Ni, Ni / Au alloy, or the like. The reflector 138 may be formed in a flat plate shape or may be formed in a plate shape having a concavo-convex structure so as to condense the radiation emitted from the heat source 134 in correspondence with the shape of the heat source 134,

The heat source unit 130 may include a plurality of heat sources 134 and a support body 132 for supporting the plurality of heat sources 134. The heat sources 134 may be disposed in parallel to each other and spaced apart from each other on the support 132. The respective heat sources 134 may extend in the longitudinal direction of the chamber 100, As shown in FIG. The heat source unit 130 may include a light transmitting tube 136 for protecting the heat source 134 and a heat source 134 may be inserted into the light transmitting tube 136 and installed in the supporting body 132. The light transmitting tube 136 may be formed of quartz or sapphire having good transmittance and good heat resistance.

Meanwhile, although the heat source unit 130 is described as being provided in the side block 112c, it may further include an auxiliary heat source unit 139. [ That is, the heat source unit 130 is provided along the side of the chamber 100, and a dead zone where the radiation does not reach is formed in a region where the side frame 110c is provided. Accordingly, the auxiliary heat source unit 139 may be additionally provided along the longitudinal direction of the side frame 110c to remove a dead zone where the radiation does not reach. The auxiliary heat source unit 139 may be additionally installed in the upper block 112a and the lower block 112b so that the upper and lower portions of the chamber 100, Can be solved.

The gas supply unit 120 may supply at least one of the substrate processing gas and the cooling gas into the chamber 100. The gas supply unit 120 may include a cooling gas supply unit 124 for supplying a cooling gas into the chamber 100 and a processing gas supply unit 122 for supplying a substrate processing gas. The inner space of the chamber 100 is divided by the susceptor 150 provided inside the chamber 100. The susceptor 150 is formed into a hollow cylindrical shape having upper and lower portions opened, And can be divided into an inner space and an outer space thereof. At this time, a substrate supporting part 200 for supporting the substrate is provided in the inner space of the susceptor 150, and a heat source unit 130 may be provided in the outer space. Therefore, the process gas supply unit 122 of the gas supply unit 120 is installed to supply the process gas to the inner space of the susceptor 150 provided with the substrate, and the cool gas supply unit 124 is disposed so that the heat source unit 130 is disposed It is preferable that the cooling gas is supplied to the outer space of the susceptor 150, The processing gas supply unit 122 may include a first supply pipe connected to the injection port 121 formed through the central portion of the upper block 112a and the cooling gas supply unit 124 may be provided outside the first supply pipe, And a second supply pipe connected to the injection port 123 formed through the block 112a. The first supply pipe and the second supply pipe may be respectively connected to a process gas supply source and a cooling gas supply source provided outside and may supply the process gas and the cooling gas into the chamber 100.

The susceptor 150 is provided inside the chamber 100 and may be formed into a hollow cylindrical shape having open upper and lower portions. The susceptor 150 is installed at the upper portion of the lower block so that the inside of the susceptor 150 and the through-hole communicate with each other. In this case, the upper portion of the susceptor 150 may be provided so as to be in contact with the upper block. Through this structure, the processing space inside the chamber 100 is separated from the inner space of the susceptor 150 and the outer space of the susceptor 150 Can be divided. Further, the susceptor 150 is heated by the radiation emitted from the heat source unit 130 to indirectly heat the substrate. The susceptor 150 may be formed of a material having a high thermal conductivity and a high heat absorbing property. For example, graphite, silicon carbide (SiC) coated graphite, silicon carbide, silicon nitride, , Alumina (Al2O3), aluminum nitride, and quartz.

The susceptor 150 may be integrally formed, and may be formed as an assembly in which a plurality of ring-shaped blocks 150a, 150b, 150c, 150d, and 150e are vertically stacked and assembled. 3 shows a susceptor 150 formed of an assembly in which a plurality of ring-shaped blocks 150a, 150b, 150c, 150d, and 150e are stacked and assembled in a vertical direction. The ring-shaped blocks 150a, 150b, 150c, 150d, and 150e have a concavo-convex structure for assembling at least one of the ring-shaped blocks 150a, 150b, 150c, 150d, and 150e adjacent to at least one of the upper surface and the lower surface . The coupling structures of the ring-shaped blocks 150a, 150b, 150c, 150d, and 150e may be combined by a stepped concave-convex structure that is engaged with each other as shown in FIG. 3 (b) and may be coupled by a concavo-convex structure having a groove-like shape and a projection-like shape fitted to each other as shown in Fig.

Referring to FIG. 4, the susceptor 150 may include a temperature detector 160 for temperature measurement. The temperature detector 160 may be spaced apart from the susceptor 150 at regular intervals along the length direction thereof. Thus, the temperature detector 160 can measure the temperature of the substrate by measuring the temperature of the susceptor 150 which is heated by the radiation to indirectly heat the substrate. The temperature detector 160 may be provided on the outer circumferential surface of the susceptor 150 or on the inner circumferential surface of the susceptor 150.

The substrate support 200 may be provided on the inner side of the susceptor 150. The substrate supporting part 200 supports the substrate inside the susceptor 150, and supports the thin plate-shaped substrate in a roll shape. The substrate support 200 may be vertically movable and rotatable.

The substrate support 200 includes a substrate support 250 for supporting the substrate, a mount 230 for mounting the substrate support 250 thereon and a support shaft 210 for supporting the mount 230 inside the chamber 100. [ . Here, the substrate support 250 is a characteristic construction of the present invention, and the support shaft 210 and the holder 230 will be described below in detail.

The holder 230 is connected to the support shaft 210 and supported in the chamber 100. The holder 230 may be formed in a hollow cylindrical shape having an open upper portion, and at least one exhaust hole 232 may be formed in the side wall along the circumferential direction. The discharge holes 232 may be formed at regular intervals along the circumferential direction of the holder 230 to discharge the process gas and the cooling gas supplied into the chamber 100. The process gas and the cooling gas discharged through the discharge hole 232 may be discharged to the outside through the discharge port 116 formed in the lower block 112b.

A support shaft 210 may be connected to a lower portion of the holder 230. The support shaft 210 is provided to penetrate the gate 114 coupled to the lower block 112b so that the upper portion may be disposed in the chamber 100 and the lower portion may be disposed outside the chamber 100. The support shaft 210 is connected to a driver 220 that provides a rotational force and the support shaft 210 can be rotated by the operation of the actuator 220. The holder 230 connected to the support shaft 210 and the substrate support 250 mounted on the holder 230 can be rotated by the rotation of the support shaft 210.

The gate 114 is connected to the elevator 40 provided outside the chamber 100 and is movable in the vertical direction and the substrate support 200 connected to the gate 114 through the support shaft 210 is connected to the gate 114 in the vertical direction. As shown in FIG. 5, the substrate supporting part 200 supported by the gate 114 can be moved in the vertical direction by driving the elevator 40 to enable the substrate to be carried in and out.

The substrate support 250 can be seated on the mount 230 by supporting the substrate. The substrate support 250 may be removably coupled to the holder 230. Referring to FIG. 6, the substrate support 250 may include a body for supporting the substrate and a fixing member for fixing the substrate to the body.

The body may include a top plate 252 and a top plate 262 and a rod 270 interconnecting the top plate 252 and the top plate 262. The upper plate 252 may be formed in a circular plate shape having a predetermined thickness. The upper plate 252 may be provided with an inflow hole 254 penetrating the upper plate 252 in the up and down direction. The plurality of inflow holes 254 may be spaced apart from each other with a predetermined spacing in the radial direction with respect to the center of the upper plate 252. In addition, an upper step may be formed on the outer circumferential surface of the upper plate 252 to support the substrate. The upper step may be formed in a half area with respect to the thickness of the upper plate 252, for example, on the lower side, and may be formed into a shape that is reduced in diameter than the upper side and recessed inward of the upper plate 252. A first fixing groove 256a and a second fixing groove 256b for fixing the fixing member may be formed on the upper side of the outer circumferential surface of the upper plate 252. The first fixing groove 256a may be formed as a circular groove having a thread on the inner circumferential surface so that a fixing member such as a bolt can be inserted and the second fixing groove 256b may be formed on the outer circumferential surface of the upper plate 252 And may be formed in a slit shape formed along a part thereof. The second fixing groove 256b is formed to change the position of the fixing member according to the size of the substrate fixed to the substrate support 250, which will be described later in detail.

The upper plate 262 may be formed in the shape of a circular plate and may have the same size as the upper plate 252. The upper plate 262 may be formed with an outlet hole 264 penetrating the upper plate 262 in the vertical direction. The plurality of outflow holes 264 may be spaced apart from each other with a predetermined spacing in a radial direction with respect to the center of the upper plate 262. A lower step may be formed on the outer circumferential surface of the upper plate 262 to support the substrate. The lower step may be formed in a half area with respect to the thickness of the upper plate 262, for example, on the upper side, and may be formed into a shape that is reduced in diameter than the lower side and recessed inward of the upper plate 262. A third fixing groove 266a and a fourth fixing groove 266b may be formed on the lower side of the outer circumference of the upper plate 262. The third fixing groove 266a may be formed in the upper plate 252 The first fixing groove 256a and the fourth fixing groove 266b may be formed at positions corresponding to the second fixing groove 256b, respectively. In this case, the third fixing groove 266a may be formed as a circular groove having a thread on the inner circumferential surface so that a fixing member such as a bolt can be inserted, and the fourth fixing groove 266b may be formed as a groove And may be formed in a slit shape formed along at least a part of the outer circumferential surface. The fourth fixing groove 266b is formed to be able to change the position of the fixing member according to the size of the substrate fixed to the substrate supporting table 250 like the second fixing groove 256b, which will be described later in detail.

The upper plate 252 and the upper plate 262 may be connected to upper and lower portions of a cylindrical rod 270 to form a dumbbell body.

The fixing member may include a first fixing member 280 and a second fixing member 290. The first fixing member 280 includes a pair of first fixing rods 282a and 282b formed in a bar shape and a spacer 284 provided between the first fixing rods 282a and 282b, And a pair of first fixing pins 288 for connecting the upper and lower plates 282a and 282b to the upper plate 252 and the upper plate 262. [ A predetermined gap may be formed between the first fixing rods 282a and 282b. The gap formed between the first fixing rods 282a and 282b is for inserting and supporting one side of the substrate. The first fixing rods 282a and 282b may be formed with a pair of first fixing rods 286 spaced apart from each other in the longitudinal direction. One end of the first fixing member 280 is connected to the first fixing groove 256a through one of the pair of first fixing holes 286 through a first fixing hole 286 formed on the upper side of the pair of first fixing holes 286, And the other end is connected to the third fixing groove 266a through one of the first fixing holes 286 and the first fixing hole 286 formed at the lower side, And may be connected to the top plate 262. The second fixing member 290 may include a second fixing rod 292 formed in a bar shape and a second fixing pin 296. The second fixing rods 292 may be formed with a plurality of second fixing rods 294 spaced apart from each other in the longitudinal direction. One end of the second fixing member 290 is coupled to the second fixing groove 256b through one of the plurality of the second fixing members 294 so as to be coupled to the upper plate 252 And the other end may be connected to the upper plate 262 by coupling one of the plurality of second fixing pins 296 to the fourth fixing groove 266b through one of the plurality of second fixing holes 294. [ The first fixing member 280 and the second fixing member 290 may be provided in parallel to the body of the substrate support 250. The second fixing member 290 is fixed to the substrate support 250 by being connected to the second fixing pin 296 so as to be movable along the second fixing groove 256b and the fourth fixing groove 266b The position can be changed according to the size. The distance between the first fixing member 280 and the second fixing member 290 is increased by moving the second fixing member 290 in the direction opposite to the first fixing member 280 when the size of the substrate is small, The distance between the first fixing member 280 and the second fixing member 290 may be reduced by moving the second fixing member 290 toward the first fixing member 280 when the size of the substrate is large.

A method of fixing the substrate S1 to the substrate support 250 will be described with reference to FIG. Referring to FIG. 7 (a), the substrate S1 may have a length and be formed into a plate shape extending in one direction. Here, the length means the vertical direction, and the width means the horizontal direction. The substrate may be at least one selected from the group consisting of copper (Cu), nickel (Ni), molybdenum (Mo), magnesium (Mg), iron (Fe), platinum (Pt), silver (Ag) ), Titanium (Ti), and tungsten (W), and may be in the form of a thin plate capable of being warped. When the substrate is provided, one side of the substrate is inserted and supported in a gap formed in the first fixing member 280, and is wound along the circumferential direction of the body of the substrate support table 250. Then, the other side of the substrate is fixed to the second fixing member 290 ). At this time, a plurality of through holes 10 may be formed on the other side of the substrate so as to be spaced along the longitudinal direction. The through holes 10 are formed in the same number as the remaining second fixtures 294 except for the number of the second fixtures 294 for fixing the second fixture member 290 to the body of the substrate support 250 . The through holes 10 may be formed to correspond to positions where the second fixture 294 is formed. When the substrate S1 is wound along the circumferential direction of the body, the upper portion of the substrate is formed at the first step 255 formed on the outer circumferential surface of the upper plate 252 and the lower portion of the substrate is formed at the outer circumferential surface of the upper plate 262 And can be supported by the two-step 265. The substrate may be supported in a roll shape surrounding at least a portion of the substrate support 200 along the body circumferential direction of the substrate support 200. [

The structure of such a substrate support 250 can be applied when the size of the substrate, for example, the length in the width direction is smaller than the circumferential length of the top plate 252 or the top plate 262.

On the other hand, when the size of the substrate S2 is larger than the circumferential length of the upper plate 352 or the upper plate 362, the structure of the substrate support can be modified as follows.

8, the substrate support 350 may include a body 352, 362, 370 on which the substrate S2 is supported, and a third fixing member 380 for fixing the substrate to the body. The body may include an upper plate 352, an upper plate 362 and a rod 370 interconnecting the upper plate 352 and the upper plate 362. In the embodiment described above, There is a difference. The third fixing member 380 may include a fixing rod 382 and a fixing pin 384 like the second fixing member 290 described above. In this modification, since the size of the substrate is larger than the circumferential length of the upper plate 352 or the upper plate 362, the substrate is not fixed to surround the body of the substrate support 350 as in the above embodiment, For example, in the form of a roll. Accordingly, the step formed on the upper plate 352 and the upper plate 362, respectively, for disposing the substrate in the form of a scroll in the body can be eliminated. Further, the rod 370 may be provided with a slit 372 through which one side of the substrate can be inserted along the longitudinal direction of the rod 370. The slit 372 may be formed to face the center of the rod 370, or it may be formed to be inclined obliquely. Further, the rod 370 may be rotatably connected to the top plate 352 or the top plate 362. When fixing the substrate to the substrate support 350, one side of the substrate is inserted into the slit 372 formed in the rod 370, and then the upper plate 352 or the upper plate 362 is rotated, And the substrate is wrapped around the rod 370 so as to have a rolled shape. At this time, the substrate is disposed in the body, and after the substrate is wound, the other side of the substrate is fixed to the body using the third fixing member 380. [ When the substrate is fixed, a spiral groove may be formed on the bottom surface of the top plate and the top surface of the top plate 362 so that the opposing portions have a predetermined gap.

With this configuration, the processing of the large area substrate can be facilitated without increasing the size of the substrate processing apparatus.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms and the inventor may appropriately define the concept of the term in order to best describe its invention It should be construed as meaning and concept consistent with the technical idea of the present invention.

100: chamber 120: gas supply unit
130: heat source unit 200:
250, 350: substrate support 252: upper plate
262: lower plate 270: rod
280: first fixing member 290: second fixing member

Claims (17)

A chamber in which a processing space is formed;
A hollow susceptor arranged to extend in one direction in the chamber;
A heat source unit provided on an inner wall of the chamber and surrounding at least an outer side of the susceptor; And
A substrate supporter provided inside the susceptor so as to be spaced apart from the susceptor and fixing the thin plate substrate in a roll shape;
Lt; / RTI >
Wherein the susceptor is composed of a combination of a plurality of ring-shaped blocks with both ends open. The method according to claim 1,
The chamber defines the processing space, and includes a base frame, at least a part of which extends in the up-and-down direction and the horizontally-extending direction;
A block provided on an open side of the base frame to form the processing space; And
And a gate formed on at least one of the blocks to open and close the processing space from the outside and to support the substrate supporting part. The method of claim 2,
Wherein the heat source unit is provided on one side of the block forming the inner wall of the chamber, and a reflector is provided between the block and the heat source unit. delete The method of claim 2,
And a support shaft connected to the other side of the mount and supporting the mount in the chamber, and a support shaft connected to the other side of the mount, the support shaft supporting the substrate, And a driver provided outside the chamber to rotate the support shaft. The method of claim 5,
The substrate support includes an upper plate on which an inflow hole for introducing gas is formed, a lower plate spaced apart from the upper plate and formed with an outflow hole through which gas is discharged, and a rod connecting the upper plate and the lower plate to each other And a fixing member connected to the upper plate and the lower plate to fix the substrate so as to surround the body. The method of claim 6,
Wherein the fixing member includes a first fixing member disposed in parallel with the rod and having opposite ends fixed to the outer sides of the upper plate and the lower plate respectively and spaced apart from and spaced apart from the first fixing member, And a second fixing member fixed to the outside of the lower plate, respectively. The method of claim 7,
Wherein the first fixing member includes a pair of fixing rods and a spacing member provided between the fixing rods to form a gap through which the one side of the substrate is inserted between the fixing rods. The method of claim 7,
Wherein the second fixing member includes a fixing rod having a fixing member spaced apart in the longitudinal direction, and a fixing pin inserted in the fixing member and fixing the other side of the substrate. The method according to claim 6 or 7,
And the second fixing member is movably connected along at least a part of the circumferential direction of the upper plate and the lower plate. The method of claim 5,
The substrate support includes an upper plate on which an inflow hole for introducing gas is formed, a lower plate spaced apart from the upper plate and formed with an outflow hole for discharging gas, and a lower plate connected to the upper plate and the lower plate, And a fixing member connected to the upper plate and the lower plate to fix the other side of the substrate so as to surround the rod. The method of claim 11,
Wherein the rod is rotatably connected to one of the upper plate and the lower plate. The method of claim 11,
Wherein the fixing member includes a fixing rod having a fixing member spaced apart in the longitudinal direction, and a fixing pin inserted in the fixing member and fixing the other side of the substrate. 14. The method of claim 13,
Wherein the fixing member is movably connected along at least a part of the circumferential direction of the upper plate and the lower plate. The method of claim 5,
Wherein the substrate supporting portion is movable in a moving direction of the gate. The method of claim 5,
And a discharge hole through which gas is discharged is formed in the holder. The method according to claim 1,
Wherein a temperature detector is provided on at least one of an inner side surface and an outer side surface of the susceptor.
KR1020150089837A 2015-06-24 2015-06-24 Apparatus for processing substrate KR101573035B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101772180B1 (en) * 2016-02-02 2017-08-29 (주)앤피에스 Substrate supporting apparatus and substrate processing apparatus having the same
KR101796214B1 (en) * 2016-02-02 2017-11-13 (주)앤피에스 Apparatus for processing substrate
US10643868B2 (en) 2015-12-21 2020-05-05 Nps Corporation Apparatus for processing substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101182638B1 (en) * 2012-03-20 2012-09-18 남원식 Apparatus for processing substrate
KR101545673B1 (en) 2014-12-18 2015-08-21 (주)앤피에스 Apparatus for processing substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101182638B1 (en) * 2012-03-20 2012-09-18 남원식 Apparatus for processing substrate
KR101545673B1 (en) 2014-12-18 2015-08-21 (주)앤피에스 Apparatus for processing substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10643868B2 (en) 2015-12-21 2020-05-05 Nps Corporation Apparatus for processing substrate
KR101772180B1 (en) * 2016-02-02 2017-08-29 (주)앤피에스 Substrate supporting apparatus and substrate processing apparatus having the same
KR101796214B1 (en) * 2016-02-02 2017-11-13 (주)앤피에스 Apparatus for processing substrate

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