CN115083961A - Ultrasonic micro-vibration vacuum packaging equipment and packaging method - Google Patents

Ultrasonic micro-vibration vacuum packaging equipment and packaging method Download PDF

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Publication number
CN115083961A
CN115083961A CN202210665667.8A CN202210665667A CN115083961A CN 115083961 A CN115083961 A CN 115083961A CN 202210665667 A CN202210665667 A CN 202210665667A CN 115083961 A CN115083961 A CN 115083961A
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CN
China
Prior art keywords
ultrasonic
vacuum
vibration
chip
welding
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Pending
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CN202210665667.8A
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Chinese (zh)
Inventor
闫立华
徐会武
李朝毅
王达鹏
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Hebei Jiewei Technology Co ltd
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Shijiazhuang Maiteda Electronic Technology Co ltd
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Priority to CN202210665667.8A priority Critical patent/CN115083961A/en
Publication of CN115083961A publication Critical patent/CN115083961A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L21/607Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of mechanical vibrations, e.g. ultrasonic vibrations

Abstract

The invention provides ultrasonic micro-vibration vacuum packaging equipment and a packaging method, belonging to the technical field of vacuum packaging, and comprising a base, a lifting mechanism, a lifting support arm, a vacuum suction tube, an ultrasonic generator and a telescopic head, wherein the lifting mechanism is arranged on the base; the lifting support arm is lifted by a lifting mechanism; the vacuum suction pipe is connected to the lifting support arm and used for picking up the chip to be welded, and the vacuum suction pipe is communicated with vacuum equipment outside the vacuum cavity; the ultrasonic generator is arranged on the vacuum suction pipe so as to lead the chip to be welded to obtain micro-vibration; the telescopic head is arranged at the lower end of the vacuum suction pipe to apply contact pressure on the chip to be welded. According to the ultrasonic micro-vibration vacuum packaging equipment provided by the invention, in a vacuum state, the micro-vibration is conducted by utilizing the ultrasonic to destroy the oxide film layer on the surface layer of the welding flux, so that the fresh surface layer state of the welding flux is completely attached to the welding metal surface, the functions of no oxidation, micro-contact homogenization and the like of the welding surface are formed, the packaging effect is improved, the probability of forming the cavity is reduced, and the occurrence of a single cavity is avoided.

Description

Ultrasonic micro-vibration vacuum packaging equipment and packaging method
Technical Field
The invention belongs to the technical field of photoelectric packaging, and particularly relates to ultrasonic micro-vibration vacuum packaging equipment and a packaging method.
Background
In the process of vacuum reflow soldering, cavities exist in a solder layer between a chip and a copper layer on a ceramic substrate directly coated with copper and a solder layer between a copper layer under a DBC and a module bottom plate due to process limitations. The occurrence of the cavity is caused in various aspects, and the existence of the cavity greatly influences the thermal performance of the power semiconductor module, so that the thermal resistance of the power semiconductor module is increased, the heat dissipation performance is reduced, the local temperature of a device is increased, even under the long-term working condition, the solder layer and the substrate are delaminated, and the like, so that the reliability and the service life of the power semiconductor module are reduced. Therefore, the elimination of the cavity in the welding process has great significance on the reduction of the working temperature of the chip and the improvement of the reliability.
The reasons for the occurrence of voids mainly come from the following aspects: in the welding process of welding fillers such as soldering paste, soldering lugs and the like, a solvent and part of additives are volatilized, and the increase of vacuum negative pressure load can only reduce the volatilized residue, but can not completely destroy the state of a surface solder layer and an oxide film layer, so that partial cavities can be remained. The more viscous the flux, the more readily volatile it is adsorbed, and the more readily solder voids are formed.
Disadvantages of the prior art: firstly, the standard for controlling the nominal voidage of the existing welding furnace is generally 2% -7%, which is closely related to the functional configuration and vacuum state of the furnace body, although some work is done on the oxidation prevention of part of the furnace body, formic acid is adopted for assisting or H 2 Reduction mode, but still without further improvement capability; secondly, before welding, surface oxide layers need to be damaged, welding needs to be realized by adopting soldering flux for destruction at present, after the soldering flux is added, environmental pollution is caused in the welding process, the welding quality is influenced, chemical cleaning is needed, and a cleaning process is added; thirdly, the existing gold wire and aluminum wire bonding generally adopts an ultrasonic energy transmission scheme, and also adopts vacuum ultrasonic welding, and the two schemes belong to energy transmission.
Disclosure of Invention
The embodiment of the invention provides ultrasonic micro-vibration vacuum packaging equipment and a packaging method, and aims to destroy an oxide film layer in a vacuum environment by using an ultrasonic micro-vibration mode, weld in the vacuum environment, reduce the sintering problem of unstable welding voidage caused by uneven oxide layer and heat conduction in the packaging process and improve the welding quality.
In a first aspect, an embodiment of the present invention provides an ultrasonic micro-vibration vacuum packaging apparatus, including: the ultrasonic micro-vibration packaging device comprises a vacuum cavity and an ultrasonic micro-vibration packaging device arranged in the vacuum cavity;
the ultrasonic micro-vibration packaging device comprises: the device comprises a base, a lifting mechanism, a lifting support arm, a vacuum suction tube, an ultrasonic generator and a telescopic head, wherein the lifting mechanism is arranged on the base; the lifting support arm is lifted by the lifting mechanism; the vacuum suction pipe is connected to the lifting support arm and used for picking up a chip to be welded, and the vacuum suction pipe is communicated with vacuum equipment outside the vacuum cavity; the ultrasonic generator is arranged on the vacuum suction pipe so as to enable the chip to be welded to obtain micro-vibration; the telescopic head is arranged at the lower end of the vacuum suction pipe to apply contact pressure on the chip to be welded.
With reference to the first aspect, in a possible implementation manner, the lifting mechanism includes a lifting motor, a lifting screw connected to the lifting motor, and a lifting nut screwed to the lifting screw, the lifting screw is rotatably connected to the base, and the lifting arm is connected to the lifting nut.
With reference to the first aspect, in a possible implementation manner, the base includes a bottom plate and an upright column disposed on the bottom plate, and the lifting screw rod is rotatably connected to the upright column.
With reference to the first aspect, in a possible implementation manner, the ultrasonic micro-vibration packaging device further includes an ultrasonic micro-vibration conducting rod, where the ultrasonic micro-vibration conducting rod is connected between the ultrasonic generator and the telescopic head and is sleeved on the vacuum suction tube to conduct micro-vibration energy from the ultrasonic generator to the chip to be welded.
With reference to the first aspect, in a possible implementation manner, the ultrasonic micro-vibration packaging device further includes a horizontal movement mechanism for moving the vacuum suction tube in the horizontal direction so as to adjust displacement of the picked chip to be tested in the horizontal direction, and the horizontal movement mechanism is disposed on the lifting arm.
In a second aspect, an embodiment of the present invention further provides an ultrasonic microvibration vacuum packaging method, where based on the ultrasonic microvibration vacuum packaging apparatus, the packaging method includes:
brushing a welding paste layer at a preset welding position on the DBC plate, and placing the DBC plate on a heating table of a vacuum cavity;
starting external vacuum equipment, and picking up the chip to be welded by utilizing the squeezing of a suction head at the end part of a vacuum suction pipe and a telescopic head;
adjusting the position of the chip to be welded by using a lifting mechanism and a horizontal moving mechanism;
according to a preset welding process curve, when the welding flux is in a melting initial state, an ultrasonic generator is started, and micro-vibration energy is applied to a chip to be welded through a telescopic head;
after the melting zone starts alloying, the ultrasonic generator is closed, and welding is continued;
after welding, the vacuum equipment is closed to release the chip, the lifting support arm is lifted, and the welding part is taken away.
With reference to the second aspect, in one possible implementation manner, the on time of the ultrasonic generator is 0.1ms to 10s when the solder is in the melting initial state.
With reference to the second aspect, in a possible implementation manner, the selection range of the ultrasonic frequency of the ultrasonic generator is adjustable between 20Hz and 50 KHz; the ultrasonic frequencies are chosen according to the following principle: selecting frequency considering the property and thickness of the welding material, reducing the size of the welding material, and then using ultrasonic frequency with higher frequency; otherwise, the low-frequency ultrasonic frequency is selected.
With reference to the second aspect, in one possible implementation manner, the relationship between the vibration amplitude and the vibration frequency provided by the ultrasonic generator is as follows: for a large-size chip to be welded, ultrasonic vibration with low frequency is selected, and the vibration energy consumed in the process of transmitting vibration at the welding position is increased; when a small-size chip is welded, the ultrasonic amplitude is controlled to be increased at any time, the vibration amplitude is controlled to be within the range of 5-100 micrometers, and the vibration amplitude is set according to the size of a cavity in a non-ultrasonic state.
With reference to the second aspect, in one possible implementation manner, the setting of the contact pressure applied to the chip to be welded is: the contact pressure is used for ensuring the conduction property between the ultrasonic vibration and the chip to be welded and simultaneously forming plastic flow, the contact pressure required for forming a welding body is different for weldments with different materials and different thicknesses, the contact pressure is mainly determined by the properties of the solder layer, the chip layer and the substrate layer, and the contact pressure range is set to be within the range of 0.5g-5 kg.
Compared with the prior art, the ultrasonic micro-vibration vacuum packaging equipment provided by the invention has the beneficial effects that:
firstly, in a vacuum state, an oxidation film layer on the surface layer of the welding flux is damaged in an ultrasonic conduction micro-vibration mode, welding assistance is realized, the fresh surface layer state of the welding flux and the welding metal surface are completely attached, functions of no oxidation of the welding surface, homogenization of microcosmic contact and the like are formed, and the packaging effect is improved.
Secondly, by utilizing the ultrasonic conduction micro vibration, the forming probability of local large cavities can be reduced, the reduction of the cavity rate by 50 percent is expected to be realized, the batch consistency is improved, and the repair cost is reduced.
Thirdly, by utilizing the ultrasonic conduction micro vibration, the appearance of a single cavity can be avoided, and the packaging effect is improved.
Fourthly, the ultrasonic conduction micro vibration is utilized to destroy the oxide layer, no soldering flux is required to be introduced and no cleaning procedure is required, the packaging procedure is reduced, the equipment structure is simplified, and the influence of chemical substances on the welding quality is avoided.
Drawings
Fig. 1 is a schematic structural diagram of an ultrasonic micro-vibration vacuum packaging apparatus provided in an embodiment of the present invention;
description of reference numerals:
1. lifting the support arm; 2. a vacuum suction pipe; 3. an ultrasonic generator; 4. an ultrasonic micro-vibration conduction rod; 5. a telescopic head; 6. a chip to be welded; 7. a DBC plate; 8. a base; 81. a base plate; 82. a column; 9. a lifting nut; 10. a lifting screw rod; 11. a lifting motor.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, the ultrasonic micro-vibration vacuum packaging apparatus provided by the present invention will now be described. The ultrasonic micro-vibration vacuum packaging equipment comprises: the ultrasonic micro-vibration packaging device comprises a vacuum cavity and an ultrasonic micro-vibration packaging device arranged in the vacuum cavity; the ultrasonic microvibration packaging device includes: the device comprises a base 8, a lifting mechanism, a lifting support arm 1, a vacuum suction tube 2, an ultrasonic generator 3 and a telescopic head 5, wherein the lifting mechanism is arranged on the base 8; the lifting support arm 1 is lifted by a lifting mechanism; the vacuum suction pipe 2 is connected to the lifting support arm 1 and used for picking up a chip 6 to be welded, and the vacuum suction pipe 2 is communicated with vacuum equipment outside the vacuum cavity; the ultrasonic generator 3 is arranged on the vacuum suction pipe 2 so as to lead the chip 6 to be welded to obtain micro-vibration; a retractable head 5 is provided at the lower end of the vacuum suction tube 2 to apply contact pressure to the chip 6 to be soldered.
Compared with the prior art, the ultrasonic micro-vibration vacuum packaging equipment provided by the embodiment has the advantages that firstly, in a vacuum state, an oxidation film layer on the surface layer of the welding flux is damaged by an ultrasonic conduction micro-vibration mode, welding assistance is realized, the fresh surface layer state of the welding flux and the complete attachment of a welding metal surface are achieved, functions of no oxidation of the welding surface, homogenization of microcontact and the like are formed, and the packaging effect is improved.
Secondly, by using ultrasonic conduction micro-vibration instead of conduction energy in the prior art, the formation probability of local large cavities can be reduced, the reduction of the cavity rate by 50 percent is expected, the batch consistency is improved, and the repair cost is reduced.
Thirdly, by utilizing the ultrasonic conduction micro vibration, the appearance of a single cavity can be avoided, and the packaging effect is improved.
Fourthly, the oxide layer is damaged by utilizing ultrasonic conduction micro vibration, scaling powder is not required to be introduced, the cleaning process is not required, the packaging process is reduced, the equipment structure is simplified, and the influence of chemical substances on the welding quality is also avoided.
It should be noted that the ultrasonic generator 3 used in the present embodiment is obtained by procurement, and a person skilled in the art can select and install the ultrasonic generator according to design requirements for the adopted prior art.
In some embodiments, referring to fig. 1, the lifting mechanism includes a lifting motor 11, a lifting screw 10 connected to the lifting motor 11, and a lifting nut 9 screwed with the lifting screw 10, the lifting screw 10 is rotatably connected to the base 8, and the lifting arm 1 is connected to the lifting nut 9. And starting the lifting motor 11, and rotating the lifting screw rod 10 to drive the lifting support arm 1 to lift up and down, so that the vacuum suction pipe 2 is close to or far away from the chip 6 to be welded. Wherein the lifting motor 11 is supported by a bracket, not shown in the figures, fixed to the base 8.
Alternatively, the lifting mechanism can also adopt a linear sliding table, an electric push rod, a worm gear and the like to realize lifting.
In some embodiments, referring to fig. 1, the base 8 includes a bottom plate 81 and a pillar 82 disposed on the bottom plate 81, and the lifting screw 10 is rotatably connected to the pillar 82.
In some embodiments, referring to fig. 1, the ultrasonic micro-vibration packaging device further includes an ultrasonic micro-vibration conducting rod 4, the ultrasonic micro-vibration conducting rod 4 is connected between the ultrasonic generator 3 and the telescopic head 5, and is sleeved on the vacuum suction tube 2, so as to conduct the micro-vibration energy from the ultrasonic generator 3 to the chip 6 to be welded. According to the scheme, the micro-vibration provided by the ultrasonic generator 3 is transmitted to the chip 6 to be welded through the ultrasonic micro-vibration transmission rod 4, the micro-vibration of the chip 6 to be welded realizes the damage of an oxide layer, and the solder is tamped under the action of the micro-vibration, so that the cavity probability is reduced.
Based on the packaging equipment with lifting function, in some embodiments, the ultrasonic micro-vibration packaging device further includes a horizontal moving mechanism for moving the vacuum suction tube 2 in the horizontal direction to adjust the displacement of the picked chip to be tested in the horizontal direction, and the horizontal moving mechanism is arranged on the lifting arm 1. Through the cooperation of elevating system and horizontal migration mechanism, realize treating the two-dimensional adjustment of welding chip 6, can make things convenient for automatic adjustment to treat welding chip 6 and DBC board 7 on the welding position just right, improve the degree of automation and the accurate nature of counterpointing. Wherein, the horizontal migration mechanism adopts the form of electric putter, cylinder, sharp slip table, and is simple and convenient.
Optionally, as the structure of the base 8, the upright 82 may also be connected to the bottom plate 81 through a rotation mechanism, for example, a rotation mode using a gear ring and a gear wheel is adopted, so as to realize free rotation of the upright 82, and thus to drive the lifting mechanism, the lifting arm 1 and the vacuum suction pipe 2 to rotate, so as to realize three-dimensional adjustment of the chip 6 to be welded, and improve the automation degree of chip position adjustment and the accuracy of alignment. Note that the horizontal movement mechanism is shown, and the rotation mechanism and the bracket for supporting the drive motor are not shown.
As an alternative embodiment, the telescopic head 5 comprises a spring and a pressure head connected to the spring. The indenter has a flat surface that contacts the chip. The telescopic head 5 is used for providing pressure for the chip when the chip is picked up and welded so as to ensure that the chip is fully contacted with the solder, thus realizing solid welding and avoiding cold welding.
The vacuum suction pipe 2 and the vacuum equipment outside the vacuum cavity absorb and loosen the chip through the vacuum equipment, and the suction head is arranged at the lower end of the vacuum suction pipe 2 so as to pick up the chip. Wherein the vacuum suction pipe 2 is connected with external vacuum equipment through a hose.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Based on the same inventive concept, the embodiment of the application also provides an ultrasonic micro-vibration vacuum packaging method, and based on the ultrasonic micro-vibration vacuum packaging equipment, the packaging method comprises the following steps:
firstly, brushing a welding paste layer at a preset welding position on a DBC plate 7, and placing the DBC plate on a hot table of a vacuum cavity; wherein, the base 8 of the packaging equipment is arranged on the hot table;
step two, starting external vacuum equipment (a vacuum pump), and picking up the chip 6 to be welded by utilizing the extrusion of a suction head at the end part of the vacuum suction pipe 2 and the telescopic head 5; the vacuum equipment adopts a vacuum pump to provide vacuum for the vacuum suction pipe 2;
thirdly, adjusting the position of the chip 6 to be welded by using a lifting mechanism and a horizontal moving mechanism; specifically, the height of the telescopic head 5 is adjusted, so that the pressure acting on the chip can be adjusted and acts on the upper surface of the SiC chip; the telescopic head 5 is pressed down along with the adjustment of the lifting mechanism until a certain pressure is applied on the chip, and then the chip is picked up through the vacuum suction head;
step four, according to a preset welding process curve, when the welding flux is in a melting initial state, starting the ultrasonic generator 3, and applying micro-vibration energy to the chip 6 to be welded through the telescopic head 5; wherein, the ultrasonic frequency, pressure and amplitude are adjusted and conducted by the ultrasonic generator 3 and the telescopic head 5;
step five, after the melting zone starts alloying, closing the ultrasonic generator 3 and continuing welding;
and step six, after welding is finished, closing the vacuum equipment to release the chip, lifting the lifting support arm 1, and taking away the welded part.
It should be explained that the Copper-clad ceramic substrate is abbreviated as ceramic Copper-clad plate, and DBC is an abbreviation of Direct Bonding coater. The ceramic copper-clad plate has the characteristics of high thermal conductivity, high electrical insulation, high mechanical strength, low expansion and the like of ceramics, has the high electrical conductivity and excellent welding performance of oxygen-free copper, can be etched into various patterns like a PCB (printed circuit board), and is applied to the fields of power electronics, high-power modules, aerospace and the like.
Aiming at the fourth step of the packaging method, when the solder is in the melting initial state, the starting time of the ultrasonic generator 3 is 0.1ms-10 s. The ultrasonic micro-vibration mainly has the effects of removing an oxide layer and compacting solder, so that the effect can be achieved by starting at the beginning of welding, and the ultrasonic effect can be removed after the welding is started, so that the welding is stable.
In the packaging method provided by the embodiment, the selection range of the ultrasonic frequency of the ultrasonic generator 3 is adjustable between 20Hz and 50 KHz; the ultrasonic frequency is selected according to the following principle: selecting frequency considering the property and thickness of the welding material, reducing the size of the welding material, and then using ultrasonic frequency with higher frequency; otherwise, the low-frequency ultrasonic frequency is selected.
As an embodiment of the packaging method provided by the present invention, the relationship between the vibration amplitude and the vibration frequency provided by the ultrasonic generator 3: for the large-size chip 6 to be welded, ultrasonic vibration with low frequency is selected, and the vibration energy consumed in the process of transmitting vibration at the welding position is increased; when a small-size chip is welded, the ultrasonic amplitude is controlled to be increased at any time, the vibration amplitude is controlled to be within the range of 5-100 micrometers, and the vibration amplitude is set according to the size of a cavity in a non-ultrasonic state.
As an embodiment of the packaging method provided by the present invention, the setting of the contact pressure applied to the chip to be soldered 6: the contact pressure is used for ensuring the conduction property between the ultrasonic vibration and the chip 6 to be welded and simultaneously forming plastic flow, the contact pressure required for forming a welding body is different for weldments with different materials and different thicknesses, the contact pressure is mainly determined by the properties of the welding flux layer, the chip layer and the substrate layer, and the contact pressure range is set to be within the range of 0.5g-5 kg.
The above description is intended to be illustrative of the preferred embodiment of the present invention and should not be taken as limiting the invention, but rather, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Claims (10)

1. An ultrasonic microvibration vacuum packaging apparatus, comprising: the ultrasonic micro-vibration packaging device comprises a vacuum cavity and an ultrasonic micro-vibration packaging device arranged in the vacuum cavity;
the ultrasonic micro-vibration packaging device comprises:
a base (8);
the lifting mechanism is arranged on the base (8);
the lifting support arm (1) is lifted by the lifting mechanism;
the vacuum suction pipe (2) is connected to the lifting support arm (1) and used for picking up a chip (6) to be welded, and the vacuum suction pipe (2) is communicated with vacuum equipment outside the vacuum cavity;
the ultrasonic generator (3) is arranged on the vacuum suction pipe (2) so as to enable the chip (6) to be welded to obtain micro vibration; and
and the telescopic head (5) is arranged at the lower end of the vacuum suction pipe (2) and is used for applying contact pressure to the chip (6) to be welded.
2. The ultrasonic microvibration vacuum packaging apparatus according to claim 1, wherein the lifting mechanism comprises a lifting motor (11), a lifting screw (10) connected to the lifting motor (11), and a lifting nut (9) screwed with the lifting screw (10), the lifting screw (10) is rotatably connected with the base (8), and the lifting arm (1) is connected to the lifting nut (9).
3. The ultrasonic microvibration vacuum packaging apparatus according to claim 2, wherein the base (8) comprises a bottom plate (81) and a column (82) disposed on the bottom plate (81), and the lifting screw (10) is rotatably connected with the column (82).
4. The sonotrode vacuum packaging device of claim 1, characterized in that, the sonotrode vacuum packaging device also comprises a sonotrode rod (4), the sonotrode rod (4) is connected between the sonotrode and the telescopic head (5) and is sleeved on the vacuum suction tube (2) to realize the conduction of the microvibration energy from the sonotrode to the chip (6) to be welded.
5. The ultrasonic microvibration vacuum packaging apparatus according to claim 1, wherein the ultrasonic microvibration packaging device further comprises a horizontal moving mechanism for moving the vacuum suction pipe (2) in a horizontal direction to adjust the displacement of the picked chip to be tested in the horizontal direction, the horizontal moving mechanism being disposed on the lifting arm (1).
6. An ultrasonic microvibration vacuum packaging method, based on the ultrasonic microvibration vacuum packaging apparatus according to any one of claims 1 to 5, the packaging method comprising:
brushing a welding paste layer at a preset welding position on the DBC plate (7), and placing the DBC plate on a hot table of a vacuum cavity;
starting external vacuum equipment, and picking up the chip (6) to be welded by utilizing the extrusion of a suction head at the end part of the vacuum suction pipe (2) and the telescopic head (5);
the position of the chip (6) to be welded is adjusted by utilizing a lifting mechanism and a horizontal moving mechanism;
according to a preset welding process curve, when the solder is in a melting initial state, starting an ultrasonic generator (3), and applying micro-vibration energy to a chip (6) to be welded through a telescopic head (5);
after the melting zone starts alloying, the ultrasonic generator (3) is closed, and welding is continued;
after welding, the vacuum equipment is closed to release the chip, the lifting support arm (1) is lifted, and the welding part is taken away.
7. The ultrasonic micro-vibration vacuum packaging method according to claim 6, characterized in that the turn-on time of the ultrasonic generator (3) is 0.1ms to 10s when the solder is in the melting initial state.
8. The ultrasonic microvibration vacuum packaging method according to claim 6, characterized in that the ultrasonic frequency of the ultrasonic generator (3) is selected in a range adjustable between 20Hz-50 KHz; the ultrasonic frequency is selected according to the following principle: selecting frequency considering the property and thickness of the welding material, reducing the size of the welding material, and then using ultrasonic frequency with higher frequency; otherwise, the low-frequency ultrasonic frequency is selected.
9. The sonotrode vacuum packaging process according to claim 6, characterized in that said sonotrode (3) provides a relation between the amplitude of the vibrations and the frequency of the vibrations: for a large-size chip (6) to be welded, ultrasonic vibration with low frequency is selected, and the vibration energy consumed in the process of transmitting vibration at the welding position is increased; when a small-size chip is welded, the ultrasonic amplitude is controlled to increase at any time, the vibration amplitude is controlled within the range of 5-100 micrometers, and the vibration amplitude is set according to the size of a cavity in a non-ultrasonic state.
10. The ultrasonic microvibration vacuum packaging method according to claim 6, characterized in that the setting of the contact pressure applied to the chip (6) to be welded is: the contact pressure is used for ensuring the conduction property between the ultrasonic vibration and the chip (6) to be welded and simultaneously forming plastic flow, the contact pressure required for forming a welding body is not equal for welding pieces of different materials and different thicknesses, the contact pressure is mainly determined by the properties of the welding material layer, the chip layer and the substrate layer, and the contact pressure range is set to be within the range of 0.5g-5 kg.
CN202210665667.8A 2022-06-13 2022-06-13 Ultrasonic micro-vibration vacuum packaging equipment and packaging method Pending CN115083961A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4344817A1 (en) * 2022-09-30 2024-04-03 Euromat Gmbh Method for joining workpieces, and joined product

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174059A (en) * 1998-12-09 2000-06-23 Matsushita Electric Ind Co Ltd Method of mounting electronic component
CN101256972A (en) * 2007-02-28 2008-09-03 富士通株式会社 Method of mounting an electronic component and mounting apparatus
CN104559891A (en) * 2014-06-27 2015-04-29 广东丹邦科技有限公司 Non-conductive adhesive and gold-gold quick interconnection method
CN215034285U (en) * 2021-06-03 2021-12-07 常州井芯半导体设备有限公司 Ultrasonic brazing device for vacuum and brazing equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174059A (en) * 1998-12-09 2000-06-23 Matsushita Electric Ind Co Ltd Method of mounting electronic component
CN101256972A (en) * 2007-02-28 2008-09-03 富士通株式会社 Method of mounting an electronic component and mounting apparatus
CN104559891A (en) * 2014-06-27 2015-04-29 广东丹邦科技有限公司 Non-conductive adhesive and gold-gold quick interconnection method
CN215034285U (en) * 2021-06-03 2021-12-07 常州井芯半导体设备有限公司 Ultrasonic brazing device for vacuum and brazing equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4344817A1 (en) * 2022-09-30 2024-04-03 Euromat Gmbh Method for joining workpieces, and joined product

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