CN115070619B - Antimonide grinding and polishing clamp and antimonide wafer grinding and polishing method - Google Patents
Antimonide grinding and polishing clamp and antimonide wafer grinding and polishing method Download PDFInfo
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- CN115070619B CN115070619B CN202210989982.6A CN202210989982A CN115070619B CN 115070619 B CN115070619 B CN 115070619B CN 202210989982 A CN202210989982 A CN 202210989982A CN 115070619 B CN115070619 B CN 115070619B
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- antimonide
- grinding
- polishing
- thin plate
- hard thin
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
The invention provides an antimonide grinding and polishing clamp and a grinding and polishing method of antimonide wafers, wherein the clamp comprises a hard thin plate and a soft cushion; holes with specific shapes are formed in the hard thin plate, and an arc opening is additionally formed in the corresponding hole; the hard thin plates are completely overlapped and adhered to the upper surface of the cylindrical grinding head; the shape of the soft cushion is equal to the size and the shape of the opening of the hard sheet; the soft cushion is adhered to the opening position of the hard sheet. The design ensures that the antimonide does not need to be stuck with wax in the grinding and polishing process, does not need to be heated, ensures that the wafer is not oxidized after being polished, and obtains the antimonide substrate with high quality.
Description
Technical Field
The invention relates to an antimonide grinding and polishing clamp and a grinding and polishing method of antimonide wafers, and belongs to the field of semiconductor substrate processing.
Background
Antimonide such as gallium antimonide and indium antimonide can be used as a substrate material of an infrared detector and an infrared laser due to ultra-narrow band gap, and has great potential in aerospace, infrared countermeasure, atmosphere monitoring, fire prevention and other aspects. However, antimonide such as gallium antimonide and indium antimonide is usually fixed by adopting a wax sticking mode when the substrate is ground and polished, the mode is very troublesome to fix and detach wafers, and the antimonide substrate is oxidized in air due to the fact that the wax needs to be heated and melted when the wafers are fixed and detached, a thick compact oxide film is formed on the surface of the antimonide substrate, the antimonide substrate is extremely difficult to remove, and the epitaxial growth of the subsequent antimonide is seriously affected. Therefore, there is an urgent need to find an antimonide substrate for MBE epitaxy that does not need to stick wax during grinding and polishing of antimonide, and that does not need to be heated, so as to ensure that the surface of the polished wafer is not oxidized, and further obtain high quality antimonide substrate for MBE epitaxy.
Disclosure of Invention
Based on the technical problems, the invention provides an antimonide polishing clamp and a polishing method of antimonide wafers, which aim to improve the convenience of fixing and dismounting in the polishing process of antimonide substrates and avoid the problems of wax sticking and heating during polishing of antimonide, and further oxidation of polished wafers.
The invention provides an antimonide grinding and polishing clamp, which comprises: a hard sheet and a soft pad; the hard thin plate is provided with a hole with a specific shape, and an arc opening is additionally arranged at the corresponding hole; the hard thin plates are completely overlapped and adhered to the upper surface of the cylindrical grinding head, and the surface of the grinding head is flat; the end face of the soft cushion is equal to the bottom face of the hard sheet hole in size and shape; the soft cushion is stuck to the opening position of the hard thin plate, and the thickness of the soft cushion is smaller than that of the hard thin plate; and the antimonide to be processed is placed on the soft cushion, and the contact surface of the antimonide to be processed and the soft cushion is equal to the end surface of the soft cushion in size and shape.
In a preferred embodiment, the material of the grater is stainless steel or aluminum grater.
In a preferred embodiment, the rigid sheet is a PVC rigid plastic sheet.
In a preferred embodiment, the cushion is a frosted leather cushion.
In a preferred embodiment, the number of openings is arranged in a plurality, evenly distributed over the rigid sheet.
In a preferred embodiment, the thickness of the stiff sheet is 2-5mm and the thickness of the cushion is 0.25-0.4mm less than the thickness of the stiff sheet.
In a preferred embodiment, the shaped openings are circular holes or square holes having a size of 2-4 inch circular holes and square holes having a size of 10mm by 10mm or 20mm by 20mm.
The invention provides a manufacturing method of antimonide grinding and polishing clamp, which comprises the following steps:
a. adhering a layer of ultrathin strong high-temperature-resistant double-sided adhesive tape on the upper surface of the cylindrical grinding head;
b. adopting a circle cutting device to process a transparent hard thin plate with the diameter the same as that of the cylindrical grinding head, and forming a round hole or a square hole on the hard thin plate, and simultaneously, additionally forming an arc opening at the corresponding opening;
c. adhering the hard thin plate with the hole with the specific shape on the upper surface of the cylindrical grinding head in a fully overlapped mode;
d. cutting out soft cushions with the same shape and size as the holes of the hard thin plate, wherein the thickness of the soft cushions is smaller than that of the hard thin plate;
e. and sticking the cut soft cushion on the opening position of the hard sheet to obtain the antimonide polishing clamp, wherein the clamp does not need to stick wax in the antimonide polishing process.
The invention provides a grinding and polishing method of antimonide wafers, which is carried out by adopting the antimonide grinding and polishing clamp provided by the invention, and specifically comprises the following steps:
a. placing antimonide substrate cutting pieces on a grinding disc, wherein the thickness of the antimonide substrate cutting pieces is 0.7-0.9mm;
b. the opening of the jig is disposed directly above the antimonide wafer, thereby fixing the substrate,
c. dripping aluminum oxide grinding liquid, setting the rotating speed of a grinding disc for grinding, observing in the grinding process, grinding the antimonide substrate after the cutting mark on the surface of the substrate completely disappears, and stopping grinding when the thickness of the wafer reaches 0.53-0.55 mm; wherein the grain diameter of the alumina grinding fluid alumina is 7-14um, and the rotating speed of the grinding disc is 15-25r/min;
d. cleaning the ground antimonide substrate and a clamp, putting the antimonide grinding sheet on a polishing disc attached with a frosted leather polishing pad, and arranging an opening of the clamp right above the antimonide substrate for fixing the substrate;
e. and (3) dripping the silica sol polishing solution with the particle size of 50nm, wherein the rotation speed of a polishing disc is 20-50 r/min, the polishing time is 2-4h, and preparing the antimonide polishing sheet with the thickness of 0.5mm and the surface roughness of less than 1 nm.
In a preferred embodiment, the abrasive disk is an iron disk, a glass disk, or a copper disk.
The beneficial effects of the invention are that
1) According to the invention, the holes with specific shapes are formed in the hard thin plate, antimonide to be processed is placed on the soft cushion in the holes, and the antimonide to be processed, the soft cushion and the holes of the hard thin plate are equal in size and shape, so that the holes limit the antimonide substrate to be processed, and the traditional wax-sticking fixing method is replaced. The process avoids the disadvantages of heating and oxidation of the surface of antimonide after polishing in wax fixation.
2) The fixture consists of the hard thin plate and the soft cushion, the hard thin plate is a thin plate which has certain strength, is easy to process and is corrosion-resistant, when processing requirements of different shapes, such as processing antimonide with square, round and rectangle shapes, the hard thin plate with holes in corresponding shapes is only required to be stuck on a grinding head with a flat surface, no expensive grinding head is required to be replaced or processed, and the universality degree of the grinding head is high.
3) Antimonide substrate has small hardness and is very fragile, and the dropped particles easily bring very deep scratches to the surface of the substrate during polishing. The soft cushion provided by the invention not only can not damage the surface quality of the antimonide substrate, but also plays a role in buffering and damping the antimonide substrate during polishing, so that the scratch risk is reduced.
4) The thickness of the soft cushion is 0.25-0.4mm smaller than that of the hard thin plate and slightly smaller than that of the final wafer, so that on one hand, the hard thin plate cannot be worn during antimonide grinding and polishing, on the other hand, the thickness design can greatly weaken the adsorption effect of the frosted leather on the back surface of the wafer, the wafer is convenient to take out, and the complex operation mode that the conventional sticky wax is required to be heated and cooled back and forth for fixing is avoided.
5) The invention opens holes (such as 2-4 inch round holes) with specific shapes in the middle of the hard thin plate, or square holes with the diameter of 10mm multiplied by 10mm and 20mm multiplied by 20mm, and simultaneously opens an arc opening at the corresponding opening, so as to facilitate the engineer to take the wafer and avoid the risk of wafer fragmentation caused by overlarge force.
6) The invention is suitable for grinding wafers with various specifications such as common rectangle, round, triangle, square and the like by forming the hole with a specific shape in the middle of the hard thin plate.
7) By the design and the method of the grinding and polishing clamp, the substrate requirements of various specifications such as double-sided grinding, single-sided polishing, double-sided polishing and the like of antimonide substrates can be met.
Drawings
In order to more clearly illustrate the embodiments of the present invention, the drawings that are required to be used in the description of the embodiments will be briefly described below, it being apparent that the drawings in the following description are some embodiments of the present invention and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a schematic view of a polishing clamp attached to the upper surface of a grinding head;
FIG. 2 is a schematic diagram of an antimonide polishing jig provided by the invention;
fig. 3 is a schematic view of 4 round holes formed in a hard sheet.
In the figure: antimonide grinding and polishing fixture 1, grinding head 2, hard sheet 11, soft pad 12, and circular arc opening 13.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-2 of the specification, the present embodiment provides an antimonide polishing jig 1, which is characterized by comprising: a hard sheet 11 and a soft pad 12; the hard thin plate 11 is provided with a hole with a specific shape, and a circular arc opening 13 is additionally arranged at the corresponding hole; the hard thin plate 11 is adhered to the upper surface of the cylindrical grinding head 2 in a fully overlapped mode, and the surface of the grinding head 2 is flat; the end face of the soft cushion 12 is equal to the bottom face of the opening of the hard sheet 11 in size and shape; the soft cushion 12 is adhered to the opening position of the hard thin plate 11, and the thickness of the soft cushion 12 is smaller than that of the hard thin plate 11; and antimonide to be processed is placed on the soft cushion 12, and the contact surface of the antimonide to be processed and the soft cushion 12 are equal in size and shape to the end surface of the soft cushion 12.
In the embodiment, a hole with a specific shape is formed in the hard thin plate, antimonide to be processed is placed on a soft cushion in the hole, the sizes and the shapes of the antimonide to be processed, the soft cushion and the opening of the hard thin plate are equal, so that the opening has a limiting effect on the antimonide substrate to be processed, and the traditional wax-sticking fixing method is replaced. The process avoids the disadvantages of heating and oxidation of the surface of antimonide after polishing in wax fixation.
On the other hand, the fixture consists of a hard thin plate and a soft cushion, the hard thin plate is a thin plate which has certain strength, is easy to process and is corrosion-resistant, when processing requirements of different shapes, such as processing antimonide with square, round and rectangular shapes, the hard thin plate with holes in corresponding shapes is only required to be stuck on a grinding head with a flat surface, and expensive grinding heads are not required to be replaced or processed, so that the universality of the grinding head is high.
In addition, antimonide substrate has small hardness and is very fragile, and the falling particles easily cause deep scratches on the surface of the substrate during polishing. In the embodiment, the soft cushion can not damage the surface quality of the antimonide substrate, and plays a role in buffering and damping the antimonide substrate during polishing, so that the scratch risk is reduced.
In this embodiment, a circular arc opening 13 is additionally formed at the corresponding opening, so as to facilitate the engineer to take the wafer, and avoid the risk of chipping the wafer due to excessive force.
In a preferred embodiment, the material of the grinding head 2 is stainless steel or aluminum grinding head.
In a preferred embodiment, the rigid sheet 11 is a PVC rigid plastic sheet. The hard sheet 11 may be any hard sheet having a certain strength, easy to process, and corrosion-resistant.
In a preferred embodiment, the cushion 12 is a frosted leather cushion.
In a preferred embodiment, the number of openings is set to be plural and uniformly distributed on the hard sheet 11. So that the polishing of a plurality of wafers can be carried out at one time, and the production efficiency is improved. Referring to fig. 3 of the specification, a schematic diagram of the hard sheet with 4 round holes is shown.
In a preferred embodiment, the thickness of the hard sheet 11 is 2-5mm and the thickness of the soft pad 12 is 0.25-0.4mm less than the thickness of the hard sheet 11.
In the embodiment, the thickness of the soft cushion is 0.25-0.4mm smaller than that of the hard thin plate and slightly smaller than that of the final wafer by 0.5mm, so that on one hand, the hard thin plate cannot be worn during antimonide grinding and polishing, on the other hand, the thickness design can greatly weaken the adsorption effect of the frosted leather on the back surface of the wafer, the wafer is convenient to take out, and the complex operation mode that the conventional sticky wax is required to be heated and cooled back and forth for fixing is avoided.
In a preferred embodiment, the shaped openings are circular holes or square holes having a size of 2-4 inch circular holes and square holes having a size of 10mm by 10mm or 20mm by 20mm.
The embodiment provides a manufacturing method of antimonide polishing clamp, which is characterized by comprising the following steps:
a. adhering a layer of ultrathin strong high-temperature-resistant double-sided adhesive tape on the upper surface of the cylindrical grinding head;
b. adopting a circle cutting device to process a transparent hard thin plate with the diameter the same as that of the cylindrical grinding head, and forming a round hole or a square hole on the hard thin plate, and simultaneously, additionally forming an arc opening at the corresponding opening;
c. adhering the hard thin plate with the hole with the specific shape on the upper surface of the cylindrical grinding head in a fully overlapped mode;
d. cutting out soft cushions with the same shape and size as the holes of the hard thin plate, wherein the thickness of the soft cushions is smaller than that of the hard thin plate;
e. and sticking the cut soft cushion on the opening position of the hard sheet to obtain the antimonide polishing clamp, wherein the clamp does not need to stick wax in the antimonide polishing process.
The embodiment provides a polishing method of antimonide wafers, which is characterized by comprising the following steps of:
a. placing antimonide substrate cutting pieces on a grinding disc, wherein the thickness of the antimonide substrate cutting pieces is 0.7-0.9mm;
b. the opening of the jig is disposed directly above the antimonide wafer, thereby fixing the substrate,
c. dripping aluminum oxide grinding liquid, setting the rotating speed of a grinding disc for grinding, observing in the grinding process, grinding the antimonide substrate after the cutting mark on the surface of the substrate completely disappears, and stopping grinding when the thickness of the wafer reaches 0.53-0.55 mm; wherein the grain diameter of the alumina grinding fluid alumina is 7-14um, and the rotating speed of the grinding disc is 15-25r/min;
d. cleaning the ground antimonide substrate and a clamp, putting the antimonide grinding sheet on a polishing disc attached with a frosted leather polishing pad, and arranging an opening of the clamp right above the antimonide substrate for fixing the substrate;
e. and (3) dripping the silica sol polishing solution with the particle size of 50nm, wherein the rotation speed of a polishing disc is 20-50 r/min, the polishing time is 2-4h, and preparing the antimonide polishing sheet with the thickness of 0.5mm and the surface roughness of less than 1 nm.
In a preferred embodiment, the abrasive disk is an iron disk, a glass disk, or a copper disk.
By adopting the antimonide polishing clamp and the antimonide wafer polishing method provided by the invention, the antimonide substrate is convenient to fix and detach, no wax is needed, heating is not needed, the polished surface of the wafer is not oxidized, and a foundation is laid for obtaining the antimonide substrate for high-quality MBE epitaxy.
The above embodiments are illustrative of the present invention, and not limiting, and any simple modifications of the present invention fall within the scope of the present invention.
Claims (2)
1. The double-sided grinding and polishing method of antimonide wafers is characterized in that antimonide grinding and polishing clamps are adopted, and the antimonide grinding and polishing clamps comprise a hard thin plate (11) and a soft cushion (12); the hard thin plate (11) is provided with a hole with a specific shape, and an arc opening (13) is additionally arranged at the corresponding hole; the hard thin plate (11) is completely overlapped and stuck on the upper surface of the cylindrical grinding head (2), and the surface of the grinding head (2) is flat; the end face of the soft cushion (12) is equal to the bottom face of the opening of the hard sheet (11) in size and shape; the soft cushion (12) is adhered to the opening position of the hard thin plate (11), and the thickness of the soft cushion (12) is smaller than that of the hard thin plate (11); the antimonide to be processed is placed on the soft cushion (12), and the contact surface of the antimonide to be processed and the soft cushion (12) is equal in size and shape to the end surface of the soft cushion (12); the grinding head (2) is made of stainless steel or aluminum; the hard sheet (11) is a PVC hard plastic sheet; the soft cushion (12) is a frosted leather cushion; the number of the open pores is set to be a plurality, and the open pores are uniformly distributed on the hard thin plate (11); the thickness of the hard thin plate (11) is 2-5mm, and the thickness of the soft cushion (12) is 0.25-0.4mm smaller than the thickness of the hard thin plate (11); the specific-shape open hole is a round hole or a square hole; the manufacturing method of the antimonide polishing clamp comprises the following steps:
a. adhering a layer of ultrathin strong high-temperature-resistant double-sided adhesive tape on the upper surface of the cylindrical grinding head (2);
b. a transparent hard thin plate (11) with the same diameter as the cylindrical grinding head (2) is processed by adopting a circle cutting device, a round hole or a square hole is formed in the hard thin plate (11), and an arc opening (13) is additionally formed at a corresponding hole;
c. adhering a hard thin plate (11) with a hole with a specific shape to the upper surface of a cylindrical grinding head (2) in a fully overlapped mode;
d. cutting out soft cushions (12) which have the same shape and the same size as the holes of the hard thin plate (11), wherein the thickness of the soft cushions (12) is smaller than that of the hard thin plate (11);
e. sticking the cut soft cushion (12) on the opening position of the hard thin plate (11) to obtain an antimonide grinding and polishing clamp, wherein the clamp does not need sticking wax in the antimonide grinding and polishing process;
when the antimonide is polished by using the antimonide polishing clamp to polish the two sides of the antimonide, the antimonide wafer is polished by changing the surface of the antimonide wafer when the cutting mark on one surface of the wafer completely disappears; the method specifically comprises the following steps:
a. placing antimonide wafer on grinding disc, wherein the thickness of antimonide wafer is 0.7-0.9mm;
b. the opening of the jig is disposed right above the antimonide wafer, thereby fixing the antimonide wafer,
c. dripping aluminum oxide grinding liquid, setting the rotating speed of a grinding disc for grinding, observing in the grinding process, grinding antimonide wafers after cutting marks on the surfaces of the wafers completely disappear, and stopping grinding when the thickness of the wafers reaches 0.53-0.55 mm; wherein the grain diameter of the alumina in the alumina grinding fluid is 7-14um, and the rotating speed of the grinding disc is 15-25r/min;
d. cleaning the ground antimonide wafer and a clamp, putting the antimonide wafer on a polishing disk attached with a frosted leather polishing pad, and arranging an opening of the clamp right above the antimonide wafer for fixing the antimonide wafer;
e. and (3) dripping the silica sol polishing solution with the particle size of 50nm, wherein the rotation speed of a polishing disc is 20-50 r/min, the polishing time is 2-4h, and preparing the antimonide polishing sheet with the thickness of 0.5mm and the surface roughness of less than 1 nm.
2. The method for double-sided polishing of antimonide wafer according to claim 1, wherein: the grinding disc is an iron disc, a glass disc or a copper disc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210989982.6A CN115070619B (en) | 2022-08-18 | 2022-08-18 | Antimonide grinding and polishing clamp and antimonide wafer grinding and polishing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210989982.6A CN115070619B (en) | 2022-08-18 | 2022-08-18 | Antimonide grinding and polishing clamp and antimonide wafer grinding and polishing method |
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| Publication Number | Publication Date |
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| CN115070619A CN115070619A (en) | 2022-09-20 |
| CN115070619B true CN115070619B (en) | 2023-08-22 |
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