CN115064477A - Donor substrate, transfer apparatus, and donor substrate manufacturing method - Google Patents

Donor substrate, transfer apparatus, and donor substrate manufacturing method Download PDF

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Publication number
CN115064477A
CN115064477A CN202210599908.3A CN202210599908A CN115064477A CN 115064477 A CN115064477 A CN 115064477A CN 202210599908 A CN202210599908 A CN 202210599908A CN 115064477 A CN115064477 A CN 115064477A
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Prior art keywords
transfer
layer
donor substrate
laser
substrate
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CN202210599908.3A
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Inventor
彭信翰
王国安
陈秋行
黄柏源
文锡
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Shenzhen Hymson Laser Intelligent Equipment Co Ltd
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Shenzhen Hymson Laser Intelligent Equipment Co Ltd
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Priority to CN202210599908.3A priority Critical patent/CN115064477A/en
Publication of CN115064477A publication Critical patent/CN115064477A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The donor substrate is used for transferring a transfer material to a receiving substrate and comprises a base layer, an absorption layer and a transfer layer which are sequentially stacked in the thickness direction, wherein the base layer can be penetrated by laser, and the absorption layer can absorb the laser to drive the transfer layer to separate. According to the invention, the transfer layer is covered by the protective layer, so that the oxidation of the transfer layer in the heating process can be reduced or avoided, the connection strength between the transfer layer and the receiving substrate is ensured, and the welding quality of the LED is further ensured.

Description

Donor substrate, transfer apparatus, and donor substrate manufacturing method
Technical Field
The invention relates to the technical field of display equipment manufacturing, in particular to a donor substrate, transfer equipment and a preparation method of the donor substrate.
Background
With the development of technology, Micro LEDs and Mini LEDs are increasingly applied to display devices, because the particle diameter of the solder paste on the Micro LEDs and Mini LEDs is very small (for example, less than 15 microns), so currently most of the solder pastes are supplied to the LEDs by using a laser-induced forward transfer process, the laser-induced forward transfer process needs to use a donor substrate, the donor substrate includes an absorption layer and a solder paste layer attached on the absorption layer, when the absorption layer of a local area of the donor substrate is irradiated by laser, the absorption layer can absorb the laser energy to generate bubbles, and the solder paste layer is heated to be in a molten state, the bubbles expand to force the solder paste in the area to be stripped and pushed to a receiving substrate, during the heating process of the solder paste, the solder paste in the molten state is easily oxidized, the solder paste in the oxidized state can weaken the adhesive force between the solder paste layer and the receiving substrate, so that the solder paste layer and the receiving substrate are separated, resulting in poor or failed LED connections.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. To this end, the present invention proposes a donor substrate that reduces or avoids oxidation of the transfer layer during heating.
The invention also provides a transfer device applying the donor substrate and a preparation method of the donor substrate.
The donor substrate comprises a base layer, an absorption layer and a transfer layer which are sequentially stacked in the thickness direction, wherein the base layer can be penetrated by laser, the absorption layer can absorb the laser to drive the transfer layer to separate, the protection layer covers the surface of the transfer layer, which is far away from the absorption layer, and the melting point of the protection layer is higher than that of the transfer layer.
The donor substrate according to the embodiment of the invention has at least the following beneficial effects:
according to the invention, the transfer layer is covered by the protective layer, so that the oxidation of the transfer layer in the heating process can be reduced or avoided, the connection strength between the transfer layer and the receiving substrate is ensured, and the welding quality of the LED is further ensured.
In other embodiments of the present invention, the material of the protective layer is the same as the material of the pad of the receiving substrate.
In other embodiments of the present invention, the material of the passivation layer is copper, gold, or silver.
In other embodiments of the present invention, the material of the protective layer is a metal reactively arranged behind the material of the transfer layer.
In other embodiments of the present invention, the transfer layer includes a plurality of transfer films, and the plurality of transfer films are sequentially stacked in a thickness direction.
In other embodiments of the present invention, the transfer layer comprises 2 to 10 layers of the transfer film, each layer of the transfer film having a thickness of 0.2 to 1 micron.
In other embodiments of the present invention, the surface of the transfer layer facing away from the absorbent layer is provided with separation grooves to separate a plurality of transfer portions, and the absorbent layer can drive the separation of the single transfer portions.
According to a second embodiment of the present invention, a transfer apparatus includes:
a base for placing a receiving substrate;
the laser assembly is connected to the base and used for generating laser;
the donor substrate is connected to the base, the base layer is arranged towards the laser assembly, and the transfer layer is arranged towards the base;
wherein the laser and the donor substrate are capable of relative movement to effect transfer of the transfer layer.
According to a transfer apparatus in a third embodiment of the present invention, comprising:
a base for placing a receiving substrate;
the laser assembly is connected to the base and used for generating laser;
the donor substrate is connected to the base, the base layer is arranged towards the laser assembly, and the transfer layer is arranged towards the base;
wherein the laser and the donor substrate are relatively movable to effect transfer of the transfer layer, the laser assembly being arranged to: the projection of the spot formed by the laser on the donor substrate onto the transfer layer can cover a single transfer section, and when the projection covers the transfer section, the projection is spaced from other adjacent transfer sections.
According to the donor substrate manufacturing method in the fourth embodiment of the present invention, the method includes the steps of:
preparing a base layer to which an absorption layer is attached;
gradually adding a plurality of transfer films to the surface of the absorption layer, which faces away from the substrate, wherein the plurality of transfer films are stacked in the thickness direction to form a transfer layer;
a protective layer is attached to the surface of the transfer layer facing away from the absorbent layer.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The invention is further described with reference to the following figures and examples, in which:
FIG. 1 is a side view of a donor substrate in accordance with one embodiment of the present invention;
FIG. 2 is a schematic view of the donor substrate transfer of FIG. 1;
FIG. 3 is a side view of a donor substrate in another embodiment of the present invention;
FIG. 4 is a side view of a donor substrate in another embodiment of the present invention;
FIG. 5 is a side view of a donor substrate in another embodiment of the invention
FIG. 6 is a bottom view of the donor substrate of FIG. 4;
FIG. 7 is a schematic perspective view of a transfer apparatus according to an embodiment of the present invention;
fig. 8 is a side view of the transfer apparatus of fig. 7.
Reference numerals are as follows:
a donor substrate 100, a base layer 110, an absorption layer 120, a transfer layer 130, a separation groove 131, a transfer section 132, a first separation groove 133, a second separation groove 134, a transfer film 135, a protective layer 140, a protective film 141;
a base 200;
a receiving substrate 300;
a laser assembly 400;
a mounting seat 500.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, the meaning of a plurality is one or more, the meaning of a plurality is two or more, and the above, below, exceeding, etc. are understood as excluding the present numbers, and the above, below, within, etc. are understood as including the present numbers. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
In the description of the present invention, reference to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Referring to fig. 1, a side view of a donor substrate 100 in an embodiment of the present invention is shown, and it should be noted that the drawing in the embodiment is only a schematic diagram, and the corresponding shape and size are not to be taken as a limitation of the present invention. As shown in the figure, the donor substrate 100 includes a base layer 110, an absorption layer 120 and a transfer layer 130, and in addition, a protection layer 140 is further provided in this embodiment, the protection layer 140 can reduce or prevent the oxidation of the transfer layer 130 in a melting stage, and ensure the connection strength between the transfer layer 130 and the receiving substrate 300, which will be described in detail below with reference to the accompanying drawings.
The base layer 110, the absorption layer 120, the transfer layer 130 and the protection layer 140 are sequentially connected, that is, the absorption layer 120 is connected between the base layer 110 and the transfer layer 130, and the transfer layer 130 is located between the absorption layer 120 and the protection layer 140, specifically, taking fig. 1 as an example, the base layer 110, the absorption layer 120 and the transfer layer 130 are arranged along a vertical direction, the absorption layer 120 is attached to a lower surface of the base layer 110, the transfer layer 130 is attached to a lower surface of the absorption layer 120, and the protection layer 140 is attached to a lower surface of the transfer layer 130.
The base layer 110 primarily carries and mounts structure that can cooperate with external structures to effect the securement of the donor substrate 100. The material of the base layer 110 should be transparent to the laser, i.e., capable of allowing the laser to pass through, and at the same time, the base layer 110 should have a certain strength to maintain the flatness of the absorption layer 120 and the transfer layer 130 after carrying the absorption layer 120 and the transfer layer 130. Generally, the substrate 110 may be made of glass or plastic.
The absorption layer 120 is capable of absorbing laser light and driving the transfer layer 130 to separate from the absorption layer 120. specifically, after the absorption layer 120 is irradiated with laser light, the irradiated area is ablated to cause a sharp volume expansion, thereby peeling the transfer material attached to the area from the bulk structure of the transfer layer 130 and finally pushing the transfer material toward the receiving substrate. The absorption layer 120 may be made of a material having a low wettability with the transfer layer 130, so that the transfer layer 130 is easily separated from the absorption layer 120, and generally, the transfer layer 130 may be made of titanium, gold, iron, aluminum, molybdenum, or the like.
The transfer layer 130 is the object to be transferred, typically tin or an alloy of tin. In use, the transfer layer 130 is disposed toward the receiving substrate 300 so that the separated transfer material can move toward the receiving substrate 300 to be attached to the receiving substrate 300. Referring to fig. 2, when the absorption layer 120 is ablated by laser irradiation, the formed vapor bubble drives the transfer material (named as the material to be transferred for convenience of description) in the corresponding region to bulge outward, and after the bulge occurs to a certain extent, the material to be transferred is separated from the main structure of the transfer layer 130, and before the material to be transferred is separated, the material to be transferred is heated to a molten state, in the related art, the transfer layer 130 is directly contacted with air, and the heating time is relatively long (about 1 to 2 seconds), and the material to be transferred is very likely to react with oxygen in the air to generate oxides in the molten state, and the adhesion property of the oxides is poor, so that the transfer material is difficult to be firmly attached to the receiving substrate 300.
In view of the above problem, the donor substrate 100 of the embodiment is further provided with a protection layer 140, the protection layer 140 covers a side of the transfer layer 130 away from the absorption layer 120, such as a lower side in the figure, and when the transfer layer 130 is heated to the molten state, the protection layer 140 can isolate the transfer layer 130 from air, so as to prevent the transfer layer 130 in the molten state from being oxidized due to oxygen contact. The protective layer 140 has a higher melting point than the transfer layer 130, and when the transfer layer 130 is heated to be in a molten state, the protective layer 140 can also cover the surface of the transfer layer 130 while maintaining its shape.
Based on the above, in the embodiment of the invention, the protective layer 140 covers the transfer layer 130, so that oxidation of the transfer layer 130 in a heating process can be reduced or avoided, the connection strength between the transfer layer 130 and the receiving substrate 300 is ensured, and further the welding quality of the LED is ensured.
In other embodiments, the protective layer 140 is made of the same material as the pads of the receiving substrate 300, so that the same material can increase the connection strength between the material to be transferred and the receiving substrate 300 when the separated material to be transferred is connected to the receiving substrate 300 through the protective layer 140. Generally, the pad material of the receiving substrate 300 is copper, so the material of the protection layer 140 can be copper, and of course, when gold or silver is used as the pad material of the receiving substrate 300, the material of the protection layer 140 can be gold or silver.
In other embodiments, the protection layer 140 is a metal actively arranged behind the material of the transfer layer 130, taking the material of the transfer layer 130 as tin as an example, the protection layer 140 may be made of copper, gold, or silver, and the melting point of the material is much higher than that of tin and is more stable than that of tin, when the transfer layer 130 is heated to a molten state, the protection layer 140 made of the material may maintain its form, and may not be oxidized or oxidized to a very low degree at a lower temperature (e.g., less than or equal to 200 ℃, at which time the transfer layer 130 may be melted), so as to ensure the connection strength between the protection layer 140 and the receiving substrate 300.
With the above embodiment, the material of the protection layer 140 may be copper, which has a high melting point and does not affect the shape due to heating, and the material of the pad is usually copper, so that the same material can be used to firmly connect the material to be transferred to the pad, and meanwhile, the material to be transferred in a molten state can be changed from a layered structure to a droplet-shaped structure, and the copper has good ductility, so that the protection layer 140 can be adaptively changed along with the shape change of the material to be transferred, thereby maintaining the wrapping of the material to be transferred, and finally, the copper has good stability, and can not be oxidized when being heated at a lower temperature, and can ensure the connection strength with the receiving substrate 300.
In other embodiments, referring to fig. 3, the transfer layer 130 is a multi-layer structure, and specifically includes a plurality of transfer films 135, and the plurality of transfer films 135 are sequentially stacked in a thickness direction, so that the transfer layer 130 can be formed by a step-by-step process, for example, by forming the transfer films 135 layer by layer through a process such as evaporation, until the thickness of the transfer layer 130 reaches a requirement. Since the thickness of the transfer layer 130 is relatively thick, for example, 2 micrometers to 10 micrometers, the problem of stress concentration exists when the transfer layer 130 is directly formed by an integrated process, and the transfer layer 130 of this embodiment is formed in a multi-layer structure by a gradual film forming manner, so that the thickness of each layer of the transfer film 135 can be reduced, thereby solving the problem of stress concentration to a certain extent. The transfer layer 130 is prevented from being undesirably warped.
Based on the above embodiment, the transfer layer 130 includes 2 to 10 transfer films 135, each transfer film 135 has a thickness of 0.2 micrometers to 1 micrometer, and the thickness of a single-layer film is small, which helps to eliminate internal stress, and at the same time, the total thickness requirement of the transfer layer 130 can be satisfied by layering and stacking.
The materials to be transferred and the surrounding materials to be transferred are connected into a whole and have equal thickness, so that the fracture position of the materials to be transferred is difficult to control in the separation process, the volume of the materials to be transferred has large deviation, and the problem of uneven transfer is caused.
In view of the above, referring to fig. 4, in the donor substrate 100 of the present embodiment, the separation groove 131 is provided on the surface (for example, the lower surface) of the transfer layer 130 facing away from the absorption layer 120, and a plurality of transfer portions 132 can be formed on the transfer layer 130 by the separation groove 131, and when in use, the transfer is performed by a single transfer portion 132. According to the depth of the separation groove 131, the present invention provides two specific embodiments, wherein one of them is as shown in fig. 4, the separation groove 131 completely penetrates the transfer layer 130, and each transfer portion 132 is independently arranged and has no connection with other transfer portions 132 around, so that the separation of the transfer portion 132 is not affected by the other transfer portions 132, and the amount of material transferred each time can be substantially consistent, thereby improving the problem of uneven transfer, and furthermore, because no transfer material exists between the transfer portions 132, no or little debris is generated when the single transfer portion 132 is separated, and the problem of debris splashing can be effectively controlled.
In another embodiment, as shown in fig. 5, the separating groove 131 does not completely penetrate the transfer layer 130, and the transfer portions 132 are connected together by a thin layer of transfer material, in this embodiment, the separating groove 131 can reduce the thickness of the transfer layer 130, that is, the transfer layer 130 at the position corresponding to the separating groove 131 is more easily broken, so that the separation position of the transfer portion 132 and the surrounding material can be controlled in the separating groove 131, the amount of material transferred at each time can be controlled to a certain extent, and in addition, the thickness of the transfer layer 130 at the broken position is thinner, so that the generated debris can be correspondingly reduced.
In the present embodiment, the number, length, and cross-sectional shape of the separation grooves 131 are not limited, and the thickness of the material layer between adjacent transfer portions 132 may be reduced.
Further, in the above-described embodiment, the protective layer 140 is also partitioned into the plurality of protective films 141 by the partition grooves 131, and the surface of each transfer portion 132 facing away from the absorbent layer 120 is provided with one protective film 141.
In the above embodiment, since the transfer portions 132 are partitioned by the partition grooves 131, it is possible to ensure that the amount of material transferred each time is substantially uniform, thereby improving the problem of uneven transfer, and also to reduce the generation of chips and improve the problem of chip splash. In addition, in the present embodiment, the transfer portion 132 is formed on the transfer layer 130, and the absorbent layer 120 or the base layer 110 does not need to be modified, that is, the specially designed base layer 110 or the absorbent layer 120 is not needed, so the applicability of the present embodiment is higher.
In some embodiments, the separating groove 131 is formed by removing a material, specifically, the transfer layer 130 and the protective layer 140 with uniform thickness may be formed on the absorption layer 120 by, for example, evaporation, and then the separating groove 131 may be formed on the transfer layer 130 and the protective layer 140 with uniform thickness by, for example, etching, and then the transfer portion 132 and the protective film 141 may be separated. Of course, the transfer portions 132 may be formed directly on the absorbent layer 120.
As a specific separation method of the transfer portion 132, referring to fig. 6, a surface of the transfer layer 130 opposite to the transfer layer 130 is provided with a plurality of first separation grooves 133 and a plurality of second separation grooves 134, wherein the first separation grooves 133 and the second separation grooves 134 may be the separation grooves 131, the first separation grooves 133 and the second separation grooves 134 are linear grooves, the widths of the grooves are constant, the plurality of first separation grooves 133 are arranged in parallel and at intervals, the plurality of second separation grooves 134 are arranged in parallel and at intervals, and the first separation grooves 133 and the second separation grooves 134 are perpendicular to each other, that is, the first separation grooves 133 intersect with the respective second separation grooves 134, and similarly, the second separation grooves 134 intersect with the respective first separation grooves 133, thereby separating the transfer portion 132 having a rectangular shape, and the transfer portion 132 having a rectangular shape adapted to a welding position of a receiving substrate, which facilitates welding.
In this embodiment, the intervals between the adjacent first separating grooves 133 may be equal, the intervals between the adjacent second separating grooves 134 may be equal, and the intervals between the adjacent first separating grooves 133 and the intervals between the adjacent second separating grooves 134 may also be equal, so that the shapes of the separated transferring portions 132 are the same (both are square, and the side lengths are equal), so that the amount of material transferred at each time is kept uniform.
It should be noted that the transfer portion 132 of the present embodiment is a rectangular body uniformly arranged, which is convenient for processing and controlling the size of the periphery.
On the basis of the above embodiments, in some specific embodiments, the length of the transfer portion 132 is less than or equal to 10 micrometers, and the transfer portion 132 with the size can adapt to the soldering of LEDs in most cases, it should be noted that the length here refers to the size of the longest side of the transfer portion 132, for example, when the transfer portion 132 is rectangular, the length of the transfer portion 132 is less than or equal to 10 micrometers, and when the transfer portion 132 is square, since the sides are equal, any side is less than or equal to 10 micrometers.
On the basis, the width of the first separation groove 133 is 6 micrometers to 12 micrometers, and the width of the second separation groove 134 is 6 micrometers to 12 micrometers, so that a sufficient interval is provided between adjacent transfer portions 132, and when a laser spot irradiates an absorption layer 120 corresponding to one transfer portion 132, the absorption layer 120 corresponding to other peripheral transfer portions 132 is prevented from being involved, and at the same time, the interval is not too wide, so that the effective use area of the transfer layer 130 is not affected.
The embodiment of the present invention further discloses a transfer apparatus, which includes a base 200, a laser assembly 400 and the donor substrate 100 of the above embodiments, and the transfer apparatus is capable of transferring the transfer portion 132 on the donor substrate 100 to the receiving substrate 300, and is specifically described below with reference to the accompanying drawings.
Referring to fig. 7 and 8, arrows in the drawings indicate the irradiation direction of the laser beam. The susceptor 200 serves as a main bearing structure of the transferring apparatus, and includes a bearing member capable of bearing the receiving substrate 300, where the bearing member may be a fixed structure capable of fixing the receiving substrate 300 at a current position, or a driving structure capable of driving the receiving substrate 300 to move. In this embodiment, the carrier may be provided with a vacuum chuck to suck the receiving substrate 300. In addition, the transfer apparatus may also be provided with other mounting structures, such as a mount 500, the mount 500 being used for the donor substrate 100.
The laser assembly 400 is used to generate a laser beam for irradiating the donor substrate 100, and in this embodiment, the laser assembly 400 can generate a flat-top laser, which has a uniform laser energy distribution and can achieve uniform expansion of the absorption layer 120.
The donor substrate 100 is positioned between the susceptor 200 and the laser assembly 400, and more particularly, above the receiving substrate 300, with a certain gap between the donor substrate 100 and the receiving substrate 300. The base layer 110 of the donor substrate 100 is disposed toward the laser assembly 400, i.e., disposed upward, and the transfer layer 130 is disposed toward the receiving substrate 300, i.e., disposed downward, and after the laser passes through the base layer 110 from above, the absorption layer 120 is irradiated and expansion is induced, thereby driving the transfer portion 132 of the corresponding position to be detached and transferred to the corresponding position of the receiving substrate 300.
The transfer apparatus of the present embodiment is suitable for single-point transfer, that is, transfer of one transfer portion 132 is achieved at a time, and based on this, the laser generated by the laser assembly 400 and the donor substrate 100 in the present embodiment can move relatively, so that the laser can irradiate the absorption layers 120 corresponding to different transfer portions 132, and then transfer of different transfer portions 132 is achieved. Depending on the difference in the relative motion between the laser and the donor substrate 100, the transfer apparatus may be implemented differently, for example, the donor substrate 100 and the receiving substrate 300 may be capable of synchronous motion, including at least one of movement in a horizontal direction and rotation about a vertical axis, while the laser remains stationary in the horizontal direction, so that the laser can irradiate different positions of the donor substrate 100. For another example, the donor substrate 100 and the receiving substrate 300 are kept stationary, and the laser can be actively moved to irradiate different positions of the donor substrate 100, which only needs active movement of the laser, thereby helping to ensure accuracy and reduce control difficulty. In order to realize the active movement of the laser, the laser assembly 400 includes a laser source and a laser galvanometer, which are not shown, and the laser generated by the laser source can be deflected after passing through the laser galvanometer, so as to change the position of the light spot within the scanning range of the laser galvanometer.
Another transfer apparatus is disclosed in the embodiment of the present invention, referring to fig. 7 and 8, which also includes the above-mentioned pedestal 200, laser assembly 400 and donor substrate 100, in the embodiment, the laser assembly 400 is configured as: when the generated laser forms a spot on the donor substrate 100, the projection of the spot on the transfer layer 130 can cover a single transfer section 132, while the projection of the spot covers a transfer section 132, the projection being spaced apart from other transfer sections 132 adjacent thereto. In this way, it can be ensured that the absorption layer 120 corresponding to a single transfer portion 132 is completely located within the irradiation range of the laser, so that the absorption layer 120 in this region can absorb the laser to expand, the thrust received by the transfer portion 132 is more uniform, and meanwhile, the laser does not irradiate the absorption layers 120 corresponding to other transfer portions 132, and the laser does not cause the movement of other transfer portions 132.
For example, the transfer portion 132 is rectangular, the spot is circular, and the diameter D of the spot satisfies: l is a radical of an alcohol 1 ＜D＜L 2 +2W, wherein L 1 The length of the diagonal line of the transfer portion 132, L 2 The length of the long side of the transfer portion 132 and the width of the separation groove 131 are W, so that it is ensured that the light spot can cover the corresponding single transfer portion 132The absorbent layer 120 of (1) does not relate to the absorbent layer 120 corresponding to the adjacent transfer portion 132.
Specifically, based on the above, the length of the transfer portion 132 is less than or equal to 10 micrometers, and the diameter of the light spot is less than or equal to 12 micrometers, so that the light spot can cover the transfer portion 132, and the diameter of the light spot is controlled in a small range, thereby improving the precision of the laser.
The invention also discloses a preparation method of the donor substrate, which comprises the following steps:
s100 preparing a base layer 110 to which an absorption layer 120 is attached, the absorption layer 120 being attached to one side of the base layer 110;
s200, a plurality of transfer films 135 are gradually added to the surface of the absorption layer 120 away from the substrate, specifically, the transfer films 135 can be added by an evaporation process, so that the overall distribution of the film layers is more uniform, and the transfer layers 130 are formed by stacking the plurality of transfer films 135 in the thickness direction. The transfer layer 130 comprises 2 to 10 transfer films 135, the thickness of each transfer film 135 is 0.2 to 1 micrometer, the thickness of a single-layer film is small, so that the internal stress can be eliminated, and meanwhile, the requirement on the total thickness of the transfer layer 130 can be met in a layered and superposed manner.
S300, attaching the protection layer 140 to the surface of the transfer layer 130 away from the absorption layer 120, and similarly, the protection layer 140 may also be attached by evaporation.
In other embodiments, the method of preparing a donor substrate further comprises:
s400 forms a partition groove 131 on the protective layer 140 and the transfer layer 130, thereby partitioning the transfer layer 130 into a plurality of transfer portions 132 and partitioning the protective layer 140 into a plurality of protective films 141.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention. Furthermore, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict.

Claims (10)

1. The donor substrate is used for transferring a transfer material to a receiving substrate, and is characterized by comprising a base layer, an absorption layer and a transfer layer which are sequentially stacked along the thickness direction, wherein the base layer can be penetrated by laser, the absorption layer can absorb the laser to drive the transfer layer to separate, the donor substrate further comprises a protective layer, the protective layer covers the surface of the transfer layer deviating from the absorption layer, and the melting point of the protective layer is higher than that of the transfer layer.
2. The donor substrate of claim 1, wherein the protective layer is made of the same material as the pad of the receiving substrate.
3. The donor substrate of claim 1, wherein the passivation layer is made of copper, gold, or silver.
4. The donor substrate of claim 1, wherein the material of the protective layer is a metal reactively arranged behind the material of the transfer layer.
5. The donor substrate of claim 1, wherein the transfer layer comprises a plurality of transfer films, the plurality of transfer films being sequentially stacked in a thickness direction.
6. The donor substrate of claim 5, wherein the transfer layer comprises 2 to 10 layers of the transfer film, each layer having a thickness of 0.2 to 1 micron.
7. The donor substrate according to claim 1, wherein a surface of the transfer layer facing away from the absorber layer is provided with separation grooves to separate a plurality of transfer portions, the absorber layer being capable of driving separation of individual transfer portions.
8. Transfer apparatus, characterized in that it comprises:
a base for placing a receiving substrate;
the laser assembly is connected to the base and used for generating laser;
the donor substrate of any one of claims 1 to 6 attached to the pedestal, the base layer disposed toward the laser assembly, the transfer layer disposed toward the pedestal;
wherein the laser and the donor substrate are capable of relative movement to effect transfer of the transfer layer.
9. Transfer apparatus, characterized in that it comprises:
a susceptor for placing a receiving substrate;
the laser assembly is connected to the base and used for generating laser;
the donor substrate of claim 7, attached to the pedestal, the base layer disposed toward the laser assembly, the transfer layer disposed toward the pedestal;
wherein the laser and the donor substrate are relatively movable to effect transfer of the transfer layer, the laser assembly being arranged to: the projection of the spot formed by the laser on the donor substrate onto the transfer layer can cover a single transfer section, and when the projection covers the transfer section, the projection is spaced from other adjacent transfer sections.
10. A method for preparing a donor substrate, comprising the steps of:
preparing a base layer to which an absorption layer is attached;
gradually adding a plurality of layers of transfer films to the surface of the absorption layer, which faces away from the substrate, wherein the plurality of layers of transfer films are stacked in the thickness direction to form a transfer layer;
a protective layer is attached to the surface of the transfer layer facing away from the absorbent layer.
CN202210599908.3A 2022-05-27 2022-05-27 Donor substrate, transfer apparatus, and donor substrate manufacturing method Pending CN115064477A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116002991A (en) * 2023-02-10 2023-04-25 广东工业大学 Multilayer composite film and application thereof in laser precision molding

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116002991A (en) * 2023-02-10 2023-04-25 广东工业大学 Multilayer composite film and application thereof in laser precision molding
CN116002991B (en) * 2023-02-10 2023-07-04 广东工业大学 Multilayer composite film and application thereof in laser precision molding

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