CN115060207B - 测量半导体晶片上的图案中的高度差 - Google Patents

测量半导体晶片上的图案中的高度差 Download PDF

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Publication number
CN115060207B
CN115060207B CN202210570423.1A CN202210570423A CN115060207B CN 115060207 B CN115060207 B CN 115060207B CN 202210570423 A CN202210570423 A CN 202210570423A CN 115060207 B CN115060207 B CN 115060207B
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model
features
shadow
height
differences
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CN115060207A (zh
Inventor
伊谢·施瓦茨班德
严·阿夫尼尔
谢尔盖·克里斯托
莫尔·巴拉姆
希蒙·利维
多伦·吉蒙斯基
罗马·克里斯
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Applied Materials Israel Ltd
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Applied Materials Israel Ltd
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G01B15/025—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness by measuring absorption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q90/00—Scanning-probe techniques or apparatus not otherwise provided for
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing & Machinery (AREA)
  • Image Analysis (AREA)
CN202210570423.1A 2017-05-18 2018-05-18 测量半导体晶片上的图案中的高度差 Active CN115060207B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201762508312P 2017-05-18 2017-05-18
US62/508,312 2017-05-18
US15/982,918 2018-05-17
US15/982,918 US10748272B2 (en) 2017-05-18 2018-05-17 Measuring height difference in patterns on semiconductor wafers
PCT/US2018/033480 WO2018213758A2 (en) 2017-05-18 2018-05-18 Measuring height difference in patterns on semiconductor wafers
CN201880032678.4A CN110622289B (zh) 2017-05-18 2018-05-18 测量半导体晶片上的图案中的高度差

Related Parent Applications (1)

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CN201880032678.4A Division CN110622289B (zh) 2017-05-18 2018-05-18 测量半导体晶片上的图案中的高度差

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CN115060207A CN115060207A (zh) 2022-09-16
CN115060207B true CN115060207B (zh) 2023-07-21

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CN201880032678.4A Active CN110622289B (zh) 2017-05-18 2018-05-18 测量半导体晶片上的图案中的高度差

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US (2) US10748272B2 (https=)
JP (1) JP7026140B2 (https=)
KR (1) KR102341667B1 (https=)
CN (2) CN115060207B (https=)
TW (1) TWI757489B (https=)
WO (1) WO2018213758A2 (https=)

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WO2022128373A1 (en) * 2020-12-15 2022-06-23 Asml Netherlands B.V. Apparatus and method for determining three dimensional data based on an image of a patterned substrate
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CN113594057B (zh) * 2021-08-05 2024-02-02 上海天岳半导体材料有限公司 一种晶片的原子台阶的宽度计算装置、方法、设备及介质
US12175656B2 (en) * 2022-02-23 2024-12-24 Applied Materials Israel Ltd. Gray level ratio inspection
US11662324B1 (en) * 2022-03-18 2023-05-30 Applied Materials Israel Ltd. Three-dimensional surface metrology of wafers
WO2024178198A1 (en) * 2023-02-24 2024-08-29 Fractilia, Llc Method of dispositioning and control of a semiconductor manufacturing process

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JP2007218711A (ja) * 2006-02-16 2007-08-30 Hitachi High-Technologies Corp 電子顕微鏡装置を用いた計測対象パターンの計測方法
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KR101467987B1 (ko) 2009-03-02 2014-12-02 어플라이드 머티리얼즈 이스라엘 리미티드 유사한 구조 엘리먼트들을 분류하는 ｃｄ 계측 시스템 및 방법
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Also Published As

Publication number Publication date
JP7026140B2 (ja) 2022-02-25
US20180336675A1 (en) 2018-11-22
US11301983B2 (en) 2022-04-12
US20200380668A1 (en) 2020-12-03
KR20190143456A (ko) 2019-12-30
WO2018213758A2 (en) 2018-11-22
CN115060207A (zh) 2022-09-16
TWI757489B (zh) 2022-03-11
TW201909113A (zh) 2019-03-01
CN110622289B (zh) 2022-05-24
WO2018213758A3 (en) 2018-12-27
US10748272B2 (en) 2020-08-18
CN110622289A (zh) 2019-12-27
JP2020521325A (ja) 2020-07-16
KR102341667B1 (ko) 2021-12-22

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