TWI757489B - 用於量測半導體晶圓上的圖案中的高度差之方法及系統 - Google Patents

用於量測半導體晶圓上的圖案中的高度差之方法及系統 Download PDF

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TWI757489B
TWI757489B TW107117023A TW107117023A TWI757489B TW I757489 B TWI757489 B TW I757489B TW 107117023 A TW107117023 A TW 107117023A TW 107117023 A TW107117023 A TW 107117023A TW I757489 B TWI757489 B TW I757489B
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Taiwan
Prior art keywords
trench
core
height difference
gap
model
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TW107117023A
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Chinese (zh)
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TW201909113A (zh
Inventor
伊夏 薛瓦爾茲班德
洋 艾維尼爾
歇爾蓋 赫里斯托
摩爾 巴拉姆
西蒙 雷比
多倫 吉爾莫斯基
羅曼 克里斯
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以色列商應用材料以色列公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G01B15/025—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness by measuring absorption
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q90/00—Scanning-probe techniques or apparatus not otherwise provided for
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Manufacturing & Machinery (AREA)
  • Image Analysis (AREA)
TW107117023A 2017-05-18 2018-05-18 用於量測半導體晶圓上的圖案中的高度差之方法及系統 TWI757489B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762508312P 2017-05-18 2017-05-18
US62/508,312 2017-05-18
US15/982,918 2018-05-17
US15/982,918 US10748272B2 (en) 2017-05-18 2018-05-17 Measuring height difference in patterns on semiconductor wafers

Publications (2)

Publication Number Publication Date
TW201909113A TW201909113A (zh) 2019-03-01
TWI757489B true TWI757489B (zh) 2022-03-11

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TW107117023A TWI757489B (zh) 2017-05-18 2018-05-18 用於量測半導體晶圓上的圖案中的高度差之方法及系統

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Country Link
US (2) US10748272B2 (https=)
JP (1) JP7026140B2 (https=)
KR (1) KR102341667B1 (https=)
CN (2) CN115060207B (https=)
TW (1) TWI757489B (https=)
WO (1) WO2018213758A2 (https=)

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EP4150962B1 (en) * 2020-05-13 2025-11-19 Qualcomm Incorporated Tune away configuration for a user equipment with multiple subscriptions
CN111816580A (zh) * 2020-07-16 2020-10-23 宁波江丰电子材料股份有限公司 一种晶圆保持环花纹凸台宽度的测量方法及测量系统
WO2022128373A1 (en) * 2020-12-15 2022-06-23 Asml Netherlands B.V. Apparatus and method for determining three dimensional data based on an image of a patterned substrate
EP4099091B1 (en) 2021-06-02 2024-04-10 IMEC vzw Pattern height metrology using an e-beam system
CN113594057B (zh) * 2021-08-05 2024-02-02 上海天岳半导体材料有限公司 一种晶片的原子台阶的宽度计算装置、方法、设备及介质
US12175656B2 (en) * 2022-02-23 2024-12-24 Applied Materials Israel Ltd. Gray level ratio inspection
US11662324B1 (en) * 2022-03-18 2023-05-30 Applied Materials Israel Ltd. Three-dimensional surface metrology of wafers
WO2024178198A1 (en) * 2023-02-24 2024-08-29 Fractilia, Llc Method of dispositioning and control of a semiconductor manufacturing process

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US20070187595A1 (en) * 2006-02-16 2007-08-16 Maki Tanaka Method for measuring a pattern dimension using a scanning electron microscope
US20120267528A1 (en) * 2009-12-25 2012-10-25 Hitachi High-Technologies Corporation Pattern Measuring Apparatus and Computer Program
TWI550679B (zh) * 2010-10-26 2016-09-21 瑪波微影Ｉｐ公司 調整裝置和使用其之帶電粒子多重小射束微影系統
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TW201643554A (zh) * 2015-03-11 2016-12-16 瑪波微影Ｉｐ公司 在多射束微影中的個別射束圖樣放置驗證

Also Published As

Publication number Publication date
JP7026140B2 (ja) 2022-02-25
US20180336675A1 (en) 2018-11-22
US11301983B2 (en) 2022-04-12
US20200380668A1 (en) 2020-12-03
KR20190143456A (ko) 2019-12-30
WO2018213758A2 (en) 2018-11-22
CN115060207A (zh) 2022-09-16
CN115060207B (zh) 2023-07-21
TW201909113A (zh) 2019-03-01
CN110622289B (zh) 2022-05-24
WO2018213758A3 (en) 2018-12-27
US10748272B2 (en) 2020-08-18
CN110622289A (zh) 2019-12-27
JP2020521325A (ja) 2020-07-16
KR102341667B1 (ko) 2021-12-22

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