CN115056045A - Wafer single-side polishing device and method - Google Patents
Wafer single-side polishing device and method Download PDFInfo
- Publication number
- CN115056045A CN115056045A CN202210757547.0A CN202210757547A CN115056045A CN 115056045 A CN115056045 A CN 115056045A CN 202210757547 A CN202210757547 A CN 202210757547A CN 115056045 A CN115056045 A CN 115056045A
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- wafer
- polishing
- layer
- limiting ring
- bonding layer
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
- B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/22—Equipment for exact control of the position of the grinding tool or work at the start of the grinding operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a wafer single-side polishing device and a method, and the device comprises a ceramic disc, a first bonding layer, an adsorption layer, a second bonding layer, a limiting ring and a polishing disc, wherein the lower surface of the adsorption layer is bonded on the upper surface of the ceramic disc through the first bonding layer, the adsorption layer fixes a wafer on the upper surface of the adsorption layer through water drops, a circle of limiting ring matched with the wafer is arranged on the outer side of the wafer, the limiting ring is fixed on the upper surface of the adsorption layer through the second bonding layer, and when the polishing disc is in contact with the upper surface of the wafer, the upper surface of the limiting ring is not in contact with the polishing disc all the time. The invention overcomes the problem that the glass fiber plate of the adsorption pad and the adsorption layer are torn into polishing solution under the heavy pressure of CMP polishing, prolongs the service life of the adsorption pad, obviously reduces the use cost of auxiliary materials, and improves TTV and yield.
Description
Technical Field
The invention relates to the technical field of wafer polishing, in particular to a single-side polishing device and method for a wafer.
Background
In 1990, the global planarization technique of CMP (CMP means chemical mechanical polishing) was proposed first by IBM corporation, and the CMP technique was rapidly developed after successfully applied to 64Mb DRAM production in 1991. The research and development work of CMP has been mainly focused on the United states-dominated consortium SEMATECH, which has now been developed globally, such as European consortium JESSI, French research company LETI and CNET, Germany FRAUDHOFER institute, etc., and Japan is rapidly developing in CMP and also engaged in silicon wafer CMP equipment supply. The single-side polishing technology of the wafer becomes a key, and the key of single-side polishing of the wafer is wafer adsorption, and currently, vacuum adsorption, wax-attached polishing and adsorption pad adsorption polishing exist, wherein the adsorption pad adsorption has an exclusive advantage due to the convenience of operation. When the traditional adsorption pad is under high pressure, the surface glass fiber plate and the adsorption layer are torn and corroded by polishing solution to be denatured, and the service life is very short.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a wafer single-side polishing device and a wafer single-side polishing method.
The purpose of the invention is realized by the following technical scheme:
a wafer single-side polishing device comprises a ceramic disc, a first bonding layer, an adsorption layer, a second bonding layer, a limiting ring and a polishing disc, wherein the lower surface of the adsorption layer is bonded on the upper surface of the ceramic disc through the first bonding layer, a wafer is fixed on the upper surface of the adsorption layer through water drops by the adsorption layer, a circle of limiting ring matched with the wafer is arranged on the outer side of the wafer, the limiting ring is fixed on the upper surface of the adsorption layer through the second bonding layer, and when the polishing disc is in contact with the upper surface of the wafer, the upper surface of the limiting ring is not in contact with the polishing disc all the time.
Furthermore, the second bonding layer and the limiting ring are coaxially arranged, and the inner diameter of the limiting ring is smaller than that of the second bonding layer.
Furthermore, the inner diameter of the limiting ring is 2-3 mm smaller than the inner diameter of the second bonding layer.
Further, the adsorption layer is made of BP materials, and the limiting ring is processed by a glass fiber plate.
A single-side polishing method for a wafer comprises the following steps:
s1: cleaning the upper surface of the ceramic disc, and removing water drops and dust on the upper surface of the ceramic disc;
s2: uniformly brushing a first bonding layer on the upper surface of the ceramic disc;
s3: cleaning dust on two surfaces of an adsorption layer, and placing the adsorption layer on the first bonding layer after cleaning to ensure that the adsorption layer is fully attached to the upper surface of the ceramic disc and the upper surface of the adsorption layer is in a flat state;
s4: pasting a circle of second bonding layer on the upper surface of the adsorption layer, then coaxially pasting a limiting ring on the second bonding layer, and ensuring that the distance from the inner edge of the second bonding layer to the inner edge of the limiting ring is 1-1.5 mm;
s5: cleaning dust on two surfaces of a wafer, dripping water drops on a non-polished surface of the wafer, and then fitting the surface with the water drops into the limiting ring on the upper surface of the adsorption layer until the upper surface of the wafer is in a flat state;
s6: starting polishing operation after the wafer is installed;
s7: during polishing operation, firstly, a polishing disk is moved downwards to enable the lower surface of the polishing disk to be in contact with the wafer, although the ceramic disk is driven to rotate in the positive direction, then the polishing disk is driven to rotate in the same direction at different speeds;
s8: after polishing, stopping rotation of the polishing disc and the ceramic disc, moving the polishing disc upwards to return to an initial state, putting the ceramic disc, the first bonding layer, the adsorption layer, the second bonding layer, the limiting ring and the wafer into water as a whole, and taking out the wafer;
s9: after the wafer is taken out, cleaning the upper surface of the adsorption layer, and placing another wafer to be polished after the cleaning is finished;
s10: repeating the steps S5 through S9 to process a plurality of the wafers.
Further, in the step S7, a cooling liquid is sprayed during the wafer polishing.
The invention has the beneficial effects that:
the invention overcomes the problem that the glass fiber plate of the adsorption pad and the adsorption layer are torn into polishing solution under the heavy pressure of CMP polishing, prolongs the service life of the adsorption pad, obviously reduces the use cost of auxiliary materials, and improves TTV and yield.
Drawings
FIG. 1 is a schematic view of a connection structure according to the present invention;
FIG. 2 is a graph comparing TTV values of wafers in the prior art and the present invention;
FIG. 3 is a graph comparing yields in the prior art and in the present invention;
in the figure, 1-ceramic disc, 2-first bonding layer, 3-adsorption layer, 4-second bonding layer, 5-spacing ring, 6-polishing disc, and 7-wafer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1 to 3, the present invention provides a technical solution:
the utility model provides a wafer single face burnishing device, including ceramic dish 1, first tie coat 2, adsorbed layer 3, second tie coat 4, spacing ring 5 and polishing dish 6, the lower surface of adsorbed layer 3 bonds on the upper surface of ceramic dish 1 through first tie coat 2, adsorbed layer 3 fixes wafer 7 on the upper surface of adsorbed layer 3 through the water droplet, the outside of wafer 7 is provided with round and wafer 7 complex spacing ring 5, spacing ring 5 passes through second tie coat 4 to be fixed on the upper surface of adsorbed layer 3, when polishing dish 6 and wafer 7's upper surface contact, spacing ring 5's upper surface is not contacted with polishing dish 6 all the time. The adsorption layer 3 is made of BP material, and the limiting ring 5 is made of glass fiber board. Wherein, the adsorption layer 3 is fixed through first tie coat 2 to ceramic dish 1, and first tie coat 2 is the gluing layer, and second tie coat 4 is two-sided adhesive layer, and BP material and glass fiber board are prior art material. The wafer 7 is a circular wafer, and the surface of the polishing disk 6 in contact with the wafer 7 is a polishing surface, which is a circular surface having a diameter larger than that of the wafer 7. The limiting ring 5 has three functions, namely, the limiting ring is used for pressing the adsorption layer 3 to ensure that the upper surface of the adsorption layer 3 is in a planar state; secondly, the wafer 7 is prevented from moving in the processing process; third, the wafer 7 is removed again to prevent the absorption layer 3 from being deformed and being unable to be reused.
In some embodiments, the second adhesive layer 4 is a circular ring disposed coaxially with the stop collar 5, and the inner diameter of the stop collar 5 is smaller than the inner diameter of the second adhesive layer 4. The inner diameter of the limiting ring 5 is 2-3 mm smaller than that of the second bonding layer 4. Wherein, the external diameter of spacing ring 5 equals the external diameter of second tie coat 4, and the internal diameter of spacing ring 5 is less than the internal diameter of second tie coat 4, sets up like this and is for conveniently taking out wafer 7, and at the in-process of taking out, still need to guarantee that wafer 7 and adsorbed layer 3 can not damaged.
A single-side polishing method of a wafer comprises the following steps:
(1) the upper surface of the ceramic disc 1 is cleaned, water drops and dust on the upper surface of the ceramic disc 1 are removed, in order to ensure the polishing quality of the wafer 7, and in order to prevent the wafer 7 from having uneven thickness after polishing, the upper surface of the ceramic disc 1 must be cleaned, and meanwhile, the upper surface of the ceramic disc 1 is ensured to be in a flat state.
(2) Evenly brush the first tie coat 2 of one deck on the upper surface of ceramic dish 1, first tie coat 2 mainly is used for bonding adsorbed layer 3, is in a flat state for guaranteeing the upper surface of adsorbed layer 3, consequently first tie coat 2 also needs evenly to paint.
(3) Dust on two faces on the clean adsorbed layer 3 is put adsorbed layer 3 on first tie coat 2 after the cleanness, makes adsorbed layer 3 fully laminate on the upper surface of ceramic dish 1 to guarantee that the upper surface of adsorbed layer 3 is in the leveling condition. This step is mainly used to mount the adsorption layer 3, and it is finally required to ensure that the upper surface of the adsorption layer 3 is a flat surface, which facilitates the polishing work of the wafer 7.
(4) A circle of second bonding layer 4 is pasted on the upper surface of the adsorption layer 3, then a limiting ring 5 is coaxially pasted on the second bonding layer 4, and the distance from the inner edge of the second bonding layer 4 to the inner edge of the limiting ring 5 is ensured to be 1-1.5 mm; the mounting mode facilitates the subsequent taking out of the wafer 7, and prevents the adsorption layer 3 from being damaged and incapable of being used again when the wafer 7 is taken out.
(5) Cleaning dust on two surfaces of the wafer 7, dripping water drops on the non-polished surface of the wafer 7, and then fitting the surface with the water drops into the limiting ring 5 on the upper surface of the adsorption layer 3 until the upper surface of the wafer 7 is in a flat state. In this step, the water droplets are purified water, which facilitates the fixing of the wafer 7 on the adsorption layer 3.
(6) And starting polishing operation after the wafer 7 is installed. And polishing after all the installation is finished.
(7) During polishing operation, firstly, the polishing disk 6 is moved downwards to enable the lower surface of the polishing disk 6 to be in contact with the wafer 7, although the ceramic disk 1 is driven to rotate in the positive direction, then the polishing disk 6 is driven to rotate in the same direction at different speeds; the cooling liquid is sprayed during the polishing of the wafer 7. During the polishing process of the wafer 7, heat is generated between the wafer 7 and the polishing disk 6 due to friction, and the cooling liquid is used for reducing the heat generated due to friction.
(8) After polishing, stop polishing dish 6 and ceramic dish 1's rotation, move up polishing dish 6 and return initial condition, regard ceramic dish 1, first tie coat 2, adsorbed layer 3, second tie coat 4, spacing ring 5 and wafer 7 as a whole and place in aqueous, then take out wafer 7. The ceramic disc 1, the first bonding layer 2, the adsorption layer 3, the second bonding layer 4, the limiting ring 5 and the wafer 7 are bonded together, and generally can not be disassembled, and can only be disassembled after being used for multiple times.
(9) After the wafer 7 is taken out, the upper surface of the adsorption layer 3 is cleaned, and another wafer 7 to be polished is placed after the cleaning is finished. In general, the ceramic disk 1 is provided with a plurality of processing positions for the wafers 7, and a plurality of wafers 7 can be processed in batch at a time.
(10) And (5) repeating the steps (5) to (9) to process the plurality of wafers 7. The process is repeated until all wafers 7 have been processed.
The invention overcomes the problem that the glass fiber plate of the adsorption pad and the adsorption layer are torn into the polishing solution under the heavy pressure of CMP polishing, prolongs the service life of the adsorption pad, obviously reduces the use cost of auxiliary materials, and improves the TTV (TTV refers to the integral thickness variation) and the yield.
In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "front", "center", "both ends", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "disposed," "connected," "secured," "screwed" and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
The foregoing is illustrative of the preferred embodiments of the present invention, and it is to be understood that the invention is not limited to the precise form disclosed herein and is not to be construed as limited to the exclusion of other embodiments, and that various other combinations, modifications, and environments may be used and modifications may be made within the scope of the concepts described herein, either by the above teachings or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (6)
1. A wafer single-side polishing device is characterized in that: including ceramic dish (1), first tie coat (2), adsorbed layer (3), second tie coat (4), spacing ring (5) and polishing dish (6), the lower surface of adsorbed layer (3) passes through first tie coat (2) bond in on the upper surface of ceramic dish (1), adsorbed layer (3) are fixed wafer (7) through the water droplet on the upper surface of adsorbed layer (3), the outside of wafer (7) be provided with the round with wafer (7) complex spacing ring (5), spacing ring (5) pass through second tie coat (4) are fixed on the upper surface of adsorbed layer (3), polishing dish (6) with during the upper surface contact of wafer (7), the upper surface of spacing ring (5) do not contact with polishing dish (6) all the time.
2. A wafer single-side polishing apparatus according to claim 1, wherein: the second bonding layer (4) and the limiting ring (5) are coaxially arranged, and the inner diameter of the limiting ring (5) is smaller than that of the second bonding layer (4).
3. A wafer single-side polishing apparatus according to claim 2, wherein: the inner diameter of the limiting ring (5) is 2-3 mm smaller than the inner diameter of the second bonding layer (4).
4. A wafer single-side polishing apparatus according to any one of claims 1 to 3, wherein: the adsorption layer (3) is made of BP material, and the limiting ring (5) is made of glass fiber board.
5. A single-side polishing method for a wafer is characterized by comprising the following steps:
s1: cleaning the upper surface of the ceramic disc (1) and removing water drops and dust on the upper surface of the ceramic disc (1);
s2: uniformly brushing a first bonding layer (2) on the upper surface of the ceramic disc (1);
s3: cleaning dust on two surfaces of an adsorption layer (3), and after cleaning, placing the adsorption layer (3) on the first bonding layer (2) to ensure that the adsorption layer (3) is fully attached to the upper surface of the ceramic disc (1) and the upper surface of the adsorption layer (3) is in a flat state;
s4: a circle of second bonding layer (4) is pasted on the upper surface of the adsorption layer (3), then a limiting ring (5) is coaxially pasted on the second bonding layer (4), and the distance from the inner edge of the second bonding layer (4) to the inner edge of the limiting ring (5) is ensured to be 1-1.5 mm;
s5: cleaning dust on two surfaces of a wafer (7), dripping water drops on a non-polished surface of the wafer (7), and then attaching the surface with the water drops into the limiting ring (5) on the upper surface of the adsorption layer (3) until the upper surface of the wafer (7) is in a flat state;
s6: starting polishing operation after the wafer (7) is installed;
s7: during polishing operation, firstly, the polishing disk (6) is moved downwards to enable the lower surface of the polishing disk (6) to be in contact with the wafer (7), although the ceramic disk (1) is driven to rotate in the positive direction, then the polishing disk (6) is driven to rotate in the same direction and at different speeds;
s8: after polishing is finished, stopping rotation of a polishing disc (6) and the ceramic disc (1), moving the polishing disc (6) upwards to return to an initial state, putting the ceramic disc (1), the first bonding layer (2), the adsorption layer (3), the second bonding layer (4), the limiting ring (5) and the wafer (7) in water as a whole, and taking out the wafer (7);
s9: after the wafer (7) is taken out, cleaning the upper surface of the adsorption layer (3), and placing another wafer (7) to be polished after the cleaning is finished;
s10: repeating the steps S5 to S9 to process a plurality of the wafers (7).
6. The method of claim 5, wherein: and in the step S7, spraying cooling liquid when the wafer (7) is polished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210757547.0A CN115056045B (en) | 2022-06-30 | 2022-06-30 | Wafer single-sided polishing device and method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210757547.0A CN115056045B (en) | 2022-06-30 | 2022-06-30 | Wafer single-sided polishing device and method |
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| CN115056045A true CN115056045A (en) | 2022-09-16 |
| CN115056045B CN115056045B (en) | 2023-10-20 |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN115056045B (en) | 2023-10-20 |
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