CN115056045B - Wafer single-sided polishing device and method - Google Patents
Wafer single-sided polishing device and method Download PDFInfo
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- CN115056045B CN115056045B CN202210757547.0A CN202210757547A CN115056045B CN 115056045 B CN115056045 B CN 115056045B CN 202210757547 A CN202210757547 A CN 202210757547A CN 115056045 B CN115056045 B CN 115056045B
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- wafer
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- limiting ring
- adsorption layer
- layer
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
- B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/22—Equipment for exact control of the position of the grinding tool or work at the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
Abstract
The invention discloses a single-sided wafer polishing device and method, comprising a ceramic disc, a first bonding layer, an adsorption layer, a second bonding layer, a limiting ring and a polishing disc, wherein the lower surface of the adsorption layer is bonded on the upper surface of the ceramic disc through the first bonding layer, the adsorption layer fixes a wafer on the upper surface of the adsorption layer through water drops, a circle of limiting ring matched with the wafer is arranged on the outer side of the wafer, the limiting ring is fixed on the upper surface of the adsorption layer through the second bonding layer, and the upper surface of the limiting ring is not contacted with the polishing disc all the time when the polishing disc is contacted with the upper surface of the wafer. The invention solves the problem that the glass fiber plate and the adsorption layer of the adsorption pad are torn into the polishing liquid under the heavy pressure of CMP polishing, prolongs the service life of the adsorption pad, obviously reduces the use cost of auxiliary materials and improves TTV and yield.
Description
Technical Field
The invention relates to the technical field of wafer polishing, in particular to a wafer single-side polishing device and method.
Background
In 1990, IBM corporation first proposed CMP (CMP refers to chemical mechanical polishing) global planarization technology, and CMP technology was rapidly developed after the successful application of 1991 in the production of 64Mb DRAM. Research and development work on CMP has been focused mainly on united states-based united states complex SEMATECH, which has now been developed worldwide, such as european complex JESSI, the french research corporation LETI and CNET, the germany fraudhaofer institute, etc., which has developed rapidly in japan and is also engaged in the provision of silicon wafer CMP equipment. In this process, the single-sided polishing technology of the wafer is critical, and the single-sided polishing of the wafer is critical on wafer adsorption, and there are vacuum adsorption, wax-attached polishing and adsorption pad adsorption polishing at present, wherein the adsorption pad adsorption has exclusive advantages due to the convenience of operation. The traditional adsorption pad has the advantages that under high pressure, the surface glass fiber plate and the adsorption layer are torn and denatured by the polishing solution, and the service life is short.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a wafer single-sided polishing device and a method.
The aim of the invention is realized by the following technical scheme:
the utility model provides a wafer single face burnishing device, includes ceramic disk, first tie coat, adsorbed layer, second tie coat, spacing ring and polishing dish, the lower surface of adsorbed layer passes through first tie coat bonds on the upper surface of ceramic disk, the adsorbed layer passes through the water droplet and fixes the wafer on the upper surface of adsorbed layer, the outside of wafer be provided with the round with wafer complex spacing ring, the spacing ring passes through the second tie coat is fixed on the upper surface of adsorbed layer, when polishing dish with the upper surface contact of wafer, the upper surface of spacing ring all the time do not with the polishing dish contacts.
Further, the second bonding layer and the limiting ring are coaxially arranged in a ring shape, and the inner diameter of the limiting ring is smaller than that of the second bonding layer.
Further, the inner diameter of the limiting ring is 2-3 mm smaller than the inner diameter of the second bonding layer.
Further, the adsorption layer is made of BP material, and the limiting ring is formed by processing a glass fiber plate.
A wafer single-sided polishing method, comprising the steps of:
s1: cleaning the upper surface of the ceramic disc, and removing water drops and dust on the upper surface of the ceramic disc;
s2: brushing a first bonding layer on the upper surface of the ceramic disc uniformly;
s3: cleaning dust on two surfaces of the adsorption layer, and placing the adsorption layer on the first bonding layer after cleaning to enable the adsorption layer to be fully attached to the upper surface of the ceramic disc and ensure that the upper surface of the adsorption layer is in a flat state;
s4: a circle of second bonding layer is stuck on the upper surface of the adsorption layer, then a limiting ring is stuck on the second bonding layer coaxially, and the distance from the inner edge of the second bonding layer to the inner edge of the limiting ring is ensured to be 1-1.5 mm;
s5: cleaning dust on two surfaces of a wafer, dripping water drops on a non-polished surface of the wafer, and attaching the surface with the water drops into the limiting ring on the upper surface of the adsorption layer until the upper surface of the wafer is in a flat state;
s6: starting polishing operation after the wafer is installed;
s7: during polishing operation, firstly, the polishing disk is moved downwards to enable the lower surface of the polishing disk to be in contact with the wafer, although the ceramic disk is driven to rotate in the positive direction, and then the polishing disk is driven to rotate in the same direction and at different speeds;
s8: after polishing, stopping rotation of the polishing disc and the ceramic disc, moving the polishing disc back to an initial state, placing the ceramic disc, the first bonding layer, the adsorption layer, the second bonding layer, the limiting ring and the wafer into water as a whole, and then taking out the wafer;
s9: after the wafer is taken out, cleaning the upper surface of the adsorption layer, and placing another wafer to be polished after cleaning;
s10: and repeating the steps from S5 to S9 to process a plurality of wafers.
Further, in the step S7, a cooling liquid is sprayed during the wafer polishing.
The beneficial effects of the invention are as follows:
the invention solves the problem that the glass fiber plate and the adsorption layer of the adsorption pad are torn into the polishing liquid under the heavy pressure of CMP polishing, prolongs the service life of the adsorption pad, obviously reduces the use cost of auxiliary materials and improves TTV and yield.
Drawings
FIG. 1 is a schematic diagram of a connection structure according to the present invention;
FIG. 2 is a graph showing the comparison of TTV values of wafers according to the present invention and conventional art;
FIG. 3 is a diagram showing the yield ratio of the present invention compared with the conventional technology;
in the figure, a 1-ceramic disk, a 2-first bonding layer, a 3-adsorption layer, a 4-second bonding layer, a 5-limiting ring, a 6-polishing disk and a 7-wafer.
Detailed Description
The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by a person skilled in the art without any inventive effort, are intended to be within the scope of the present invention, based on the embodiments of the present invention.
Referring to fig. 1-3, the present invention provides a technical solution:
the utility model provides a wafer single face burnishing device, including ceramic disk 1, first tie coat 2, adsorbed layer 3, second tie coat 4, spacing ring 5 and polishing disk 6, the lower surface of adsorbed layer 3 bonds on the upper surface of ceramic disk 1 through first tie coat 2, adsorbed layer 3 passes through the water droplet and fixes wafer 7 on the upper surface of adsorbed layer 3, the outside of wafer 7 is provided with round and wafer 7 complex spacing ring 5, spacing ring 5 passes through second tie coat 4 to be fixed on the upper surface of adsorbed layer 3, when polishing disk 6 contacted with the upper surface of wafer 7, the upper surface of spacing ring 5 is not contacted with polishing disk 6 all the time. The adsorption layer 3 is made of BP material, and the limiting ring 5 is made of glass fiber plates. Wherein, the ceramic disk 1 fixes the adsorption layer 3 through the first bonding layer 2, and the first bonding layer 2 is the gluing layer, and the second bonding layer 4 is the double faced adhesive tape, and BP material and glass fiber board are prior art material. The wafer 7 is a circular wafer, and the surface of the polishing disk 6, which is in contact with the wafer 7, is a polishing surface, which is a circular surface with a diameter larger than that of the wafer 7. The limiting ring 5 has three functions, namely, the upper surface of the adsorption layer 3 is ensured to be in a plane state in order to press the adsorption layer 3; secondly, preventing the wafer 7 from moving in the processing process; and thirdly, when the wafer 7 is detached again, the adsorption layer 3 is prevented from deforming and cannot be reused.
In some embodiments, the second adhesive layer 4 is a circular ring coaxially disposed with the stop collar 5, and the inner diameter of the stop collar 5 is smaller than the inner diameter of the second adhesive layer 4. The inner diameter of the limiting ring 5 is 2-3 mm smaller than that of the second adhesive layer 4. The outer diameter of the limiting ring 5 is equal to the outer diameter of the second adhesive layer 4, and the inner diameter of the limiting ring 5 is smaller than the inner diameter of the second adhesive layer 4, so that the wafer 7 is conveniently taken out, and the wafer 7 and the adsorption layer 3 are not damaged in the process of taking out.
The wafer single-side polishing method comprises the following steps:
(1) The upper surface of the ceramic disc 1 is cleaned, water drops and dust on the upper surface of the ceramic disc 1 are removed, and in order to ensure the polishing quality of the wafer 7 and prevent the phenomenon that the thickness of the wafer 7 is uneven after polishing, the upper surface of the ceramic disc 1 must be cleaned, and meanwhile, the upper surface of the ceramic disc 1 is ensured to be in a flat state.
(2) A first adhesive layer 2 is uniformly applied on the upper surface of the ceramic disc 1, and the first adhesive layer 2 is mainly used for bonding the adsorbing layer 3, so that the upper surface of the adsorbing layer 3 is in a flat state, and therefore, the first adhesive layer 2 needs to be uniformly applied.
(3) Cleaning dust on two surfaces of the adsorption layer 3, placing the adsorption layer 3 on the first bonding layer 2 after cleaning, enabling the adsorption layer 3 to be fully attached to the upper surface of the ceramic disc 1, and ensuring that the upper surface of the adsorption layer 3 is in a flat state. This step is mainly used for mounting the adsorption layer 3, and finally, it is to ensure that the upper surface of the adsorption layer 3 is a flat surface, so that the polishing work of the wafer 7 is facilitated.
(4) A circle of second bonding layer 4 is stuck on the upper surface of the adsorption layer 3, then a limiting ring 5 is stuck on the second bonding layer 4 coaxially, and the distance from the inner edge of the second bonding layer 4 to the inner edge of the limiting ring 5 is ensured to be 1-1.5 mm; such an installation facilitates the subsequent removal of the wafer 7, preventing the adsorption layer 3 from being damaged and not reused when the wafer 7 is removed.
(5) Cleaning dust on two surfaces of the wafer 7, dripping water drops on the non-polished surface of the wafer 7, and attaching the surface with the water drops into the limit ring 5 on the upper surface of the adsorption layer 3 until the upper surface of the wafer 7 is in a flat state. In this step, the water drops use no purified water, which facilitates the fixing of the wafer 7 on the adsorption layer 3.
(6) And after the wafer 7 is mounted, starting polishing operation. And polishing after all the installation is completed.
(7) During polishing operation, the polishing disk 6 is firstly moved downwards so that the lower surface of the polishing disk 6 is contacted with the wafer 7, although the rear driving ceramic disk 1 rotates in the positive direction, and then the polishing disk 6 is driven to rotate in the same direction and at different speeds; the wafer 7 is polished by spraying a cooling liquid. During the polishing of the wafer 7, heat is generated between the wafer 7 and the polishing pad 6 due to friction, and the coolant is used for reducing the heat generated by friction.
(8) After polishing is completed, rotation of the polishing disk 6 and the ceramic disk 1 is stopped, the polishing disk 6 is moved back to the original state, the ceramic disk 1, the first bonding layer 2, the adsorption layer 3, the second bonding layer 4, the limiting ring 5 and the wafer 7 are placed in water as a whole, and then the wafer 7 is taken out. The ceramic disc 1, the first adhesive layer 2, the adsorption layer 3, the second adhesive layer 4, the limiting ring 5 and the wafer 7 are all adhered together, and are not detached in general, and are detached only after multiple uses.
(9) After taking out the wafer 7, the upper surface of the adsorption layer 3 is cleaned, and after cleaning, another wafer 7 to be polished is placed. In general, the ceramic disk 1 is provided with a processing station for a plurality of wafers 7, and a plurality of wafers 7 can be processed in batch at a time.
(10) And (5) repeating the steps from (5) to (9) to process a plurality of wafers 7. The process is repeated until all wafers 7 are completely processed.
The invention solves the problem that the glass fiber plate and the adsorption layer of the adsorption pad are torn into the polishing liquid under the heavy pressure of CMP polishing, prolongs the service life of the adsorption pad, obviously reduces the use cost of auxiliary materials and improves the TTV (TTV refers to overall thickness dispersion) and yield.
In the description of the present invention, it should be understood that the terms "coaxial," "bottom," "one end," "top," "middle," "another end," "upper," "one side," "top," "inner," "front," "center," "two ends," etc. indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "configured," "connected," "secured," "screwed," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intermediaries, or in communication with each other or in interaction with each other, unless explicitly defined otherwise, the meaning of the terms described above in this application will be understood by those of ordinary skill in the art in view of the specific circumstances.
The foregoing is merely a preferred embodiment of the invention, and it is to be understood that the invention is not limited to the form disclosed herein but is not to be construed as excluding other embodiments, but is capable of numerous other combinations, modifications and environments and is capable of modifications within the scope of the inventive concept, either as taught or as a matter of routine skill or knowledge in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (1)
1. The utility model provides a wafer single face burnishing device which characterized in that: the polishing device comprises a ceramic disc (1), a first bonding layer (2), an adsorption layer (3), a second bonding layer (4), a limiting ring (5) and a polishing disc (6), wherein the lower surface of the adsorption layer (3) is bonded on the upper surface of the ceramic disc (1) through the first bonding layer (2), the adsorption layer (3) fixes a wafer (7) on the upper surface of the adsorption layer (3) through water drops, a circle of limiting ring (5) matched with the wafer (7) is arranged on the outer side of the wafer (7), the limiting ring (5) is fixed on the upper surface of the adsorption layer (3) through the second bonding layer (4), and when the polishing disc (6) is contacted with the upper surface of the wafer (7), the upper surface of the limiting ring (5) is not contacted with the polishing disc (6) all the time;
the second bonding layer (4) and the limiting ring (5) are coaxially arranged into a circular ring, and the inner diameter of the limiting ring (5) is smaller than the inner diameter of the second bonding layer (4);
the inner diameter of the limiting ring (5) is 2-3 mm smaller than that of the second bonding layer (4);
the adsorption layer (3) is made of BP material, and the limiting ring (5) is formed by processing a glass fiber plate;
a wafer single-sided polishing method, comprising the steps of:
s1: cleaning the upper surface of the ceramic disc (1) to remove water drops and dust on the upper surface of the ceramic disc (1);
s2: uniformly brushing a first bonding layer (2) on the upper surface of the ceramic disc (1);
s3: cleaning dust on two surfaces of an adsorption layer (3), and placing the adsorption layer (3) on the first bonding layer (2) after cleaning to enable the adsorption layer (3) to be fully attached to the upper surface of the ceramic disc (1) and ensure that the upper surface of the adsorption layer (3) is in a flat state;
s4: a circle of second bonding layer (4) is stuck on the upper surface of the adsorption layer (3), then a limiting ring (5) is stuck on the second bonding layer (4) coaxially, and the distance from the inner edge of the second bonding layer (4) to the inner edge of the limiting ring (5) is 1-1.5 mm;
s5: cleaning dust on two surfaces of a wafer (7), dripping water drops on a non-polished surface of the wafer (7), and attaching the surface with the water drops into the limiting ring (5) on the upper surface of the adsorption layer (3) until the upper surface of the wafer (7) is in a flat state;
s6: starting polishing operation after the wafer (7) is installed;
s7: during polishing operation, firstly, the polishing disc (6) is moved downwards to enable the lower surface of the polishing disc (6) to be in contact with the wafer (7), then the ceramic disc (1) is driven to rotate in the positive direction, then the polishing disc (6) is driven to rotate in the same direction and at different speeds, and cooling liquid is sprayed when the wafer (7) is polished;
s8: after polishing is finished, stopping rotation of the polishing disc (6) and the ceramic disc (1), moving the polishing disc (6) back to an initial state, placing the ceramic disc (1), the first bonding layer (2), the adsorption layer (3), the second bonding layer (4), the limiting ring (5) and the wafer (7) into water as a whole, and then taking out the wafer (7);
s9: after the wafer (7) is taken out, cleaning the upper surface of the adsorption layer (3), and placing another wafer (7) to be polished after cleaning;
s10: and repeating the steps S5 to S9 to process a plurality of wafers (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210757547.0A CN115056045B (en) | 2022-06-30 | 2022-06-30 | Wafer single-sided polishing device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210757547.0A CN115056045B (en) | 2022-06-30 | 2022-06-30 | Wafer single-sided polishing device and method |
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| Publication Number | Publication Date |
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| CN115056045A CN115056045A (en) | 2022-09-16 |
| CN115056045B true CN115056045B (en) | 2023-10-20 |
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0798078A2 (en) * | 1996-03-28 | 1997-10-01 | Shin-Etsu Handotai Company Limited | Method for manufacturing backing pad and apparatus used therefor |
| JP2000308961A (en) * | 1999-04-26 | 2000-11-07 | Speedfam-Ipec Co Ltd | Affixing plate and manufacture of same |
| TW200636905A (en) * | 2005-03-28 | 2006-10-16 | Nikon Corp | Suction device, polishing device, semiconductor device and manufacturing method of semiconductor device |
| JP2007255957A (en) * | 2006-03-22 | 2007-10-04 | Nikon Corp | Inspection method of wafer chuck |
| CN102263024A (en) * | 2011-07-18 | 2011-11-30 | 北京通美晶体技术有限公司 | Back side anticorrosion method of single side polishing wafer |
| CN103009222A (en) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | Wax-free polishing process of heavily-doped polished silicon wafer with high local flatness |
| CN103646851A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Polishing technology of reducing monocrystal silicon wafer scratches |
| CN204160876U (en) * | 2014-09-01 | 2015-02-18 | 昆山新天豪电子有限公司 | A kind of reinforced glass scraping article |
| CN207272984U (en) * | 2017-09-13 | 2018-04-27 | 广东先导先进材料股份有限公司 | Chip anticorrosion burnishing device |
| CN108214260A (en) * | 2016-12-22 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of polishing process of ultra-thin sapphire wafer |
| CN108520852A (en) * | 2018-06-04 | 2018-09-11 | 睿力集成电路有限公司 | A kind of abnormality of head monitoring system and method for plasma etching |
| CN111823130A (en) * | 2020-07-17 | 2020-10-27 | 中国科学院微电子研究所 | Polishing head and polishing device |
| CN112372509A (en) * | 2020-11-11 | 2021-02-19 | 西安奕斯伟硅片技术有限公司 | Method and apparatus for changing initial state of polishing pad to hydrophilicity |
| CN215148003U (en) * | 2021-07-02 | 2021-12-14 | 天津微科光电科技有限公司 | Adsorption pad for wafer processing technology |
| CN216463927U (en) * | 2021-12-30 | 2022-05-10 | 中锗科技有限公司 | Polishing pad pasting device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101160266B1 (en) * | 2009-10-07 | 2012-06-27 | 주식회사 엘지실트론 | Wafer support member, method for manufacturing the same and wafer polishing unit |
-
2022
- 2022-06-30 CN CN202210757547.0A patent/CN115056045B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0798078A2 (en) * | 1996-03-28 | 1997-10-01 | Shin-Etsu Handotai Company Limited | Method for manufacturing backing pad and apparatus used therefor |
| JP2000308961A (en) * | 1999-04-26 | 2000-11-07 | Speedfam-Ipec Co Ltd | Affixing plate and manufacture of same |
| TW200636905A (en) * | 2005-03-28 | 2006-10-16 | Nikon Corp | Suction device, polishing device, semiconductor device and manufacturing method of semiconductor device |
| JP2007255957A (en) * | 2006-03-22 | 2007-10-04 | Nikon Corp | Inspection method of wafer chuck |
| CN102263024A (en) * | 2011-07-18 | 2011-11-30 | 北京通美晶体技术有限公司 | Back side anticorrosion method of single side polishing wafer |
| CN103009222A (en) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | Wax-free polishing process of heavily-doped polished silicon wafer with high local flatness |
| CN103646851A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Polishing technology of reducing monocrystal silicon wafer scratches |
| CN204160876U (en) * | 2014-09-01 | 2015-02-18 | 昆山新天豪电子有限公司 | A kind of reinforced glass scraping article |
| CN108214260A (en) * | 2016-12-22 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of polishing process of ultra-thin sapphire wafer |
| CN207272984U (en) * | 2017-09-13 | 2018-04-27 | 广东先导先进材料股份有限公司 | Chip anticorrosion burnishing device |
| CN108520852A (en) * | 2018-06-04 | 2018-09-11 | 睿力集成电路有限公司 | A kind of abnormality of head monitoring system and method for plasma etching |
| CN111823130A (en) * | 2020-07-17 | 2020-10-27 | 中国科学院微电子研究所 | Polishing head and polishing device |
| CN112372509A (en) * | 2020-11-11 | 2021-02-19 | 西安奕斯伟硅片技术有限公司 | Method and apparatus for changing initial state of polishing pad to hydrophilicity |
| CN215148003U (en) * | 2021-07-02 | 2021-12-14 | 天津微科光电科技有限公司 | Adsorption pad for wafer processing technology |
| CN216463927U (en) * | 2021-12-30 | 2022-05-10 | 中锗科技有限公司 | Polishing pad pasting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115056045A (en) | 2022-09-16 |
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