CN115036243A - Die bonder and die bonding method - Google Patents
Die bonder and die bonding method Download PDFInfo
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- CN115036243A CN115036243A CN202210772025.8A CN202210772025A CN115036243A CN 115036243 A CN115036243 A CN 115036243A CN 202210772025 A CN202210772025 A CN 202210772025A CN 115036243 A CN115036243 A CN 115036243A
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000007246 mechanism Effects 0.000 claims abstract description 76
- 239000013078 crystal Substances 0.000 claims abstract description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 140
- 229910052757 nitrogen Inorganic materials 0.000 claims description 63
- 238000010438 heat treatment Methods 0.000 claims description 27
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 14
- 239000000523 sample Substances 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 abstract description 6
- 239000007787 solid Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 238000004880 explosion Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
The application provides a die bonder, which comprises a bearing mechanism, a die taking mechanism and a pressing mechanism; the bearing mechanism comprises a lead frame, and a die fixing position for bearing the chip is arranged on the lead frame; the crystal taking mechanism comprises a rocker arm and a suction nozzle, and the suction nozzle is connected to the free end of the rocker arm; the pressing mechanism comprises a pressing plate which is movably connected above the lead frame and is arranged corresponding to the die bonding position, and the pressing plate is configured to reciprocate up and down relative to the die bonding position so as to press the chip on the die bonding position; the rocker arm and the suction nozzle of the die bonder only carry chips to the lead frame, the action of pressing the chips is avoided, the chips cannot be pressed down, the pressing plate uniformly presses the chips on the row of die bonding positions at the same time, so that the stop time of the suction nozzle can be saved, the die bonding time can be saved, the die bonding efficiency can be improved, and the die bonding quality can be ensured; the application also provides a die bonding method.
Description
Technical Field
The application relates to the technical field of die bonding equipment, in particular to a die bonding machine and a die bonding method.
Background
In the die bonding process of the existing die bonder, a chip on a wafer is generally fixed on a substrate or a lead frame through a rocker arm and a suction nozzle, in the process, the rocker arm drives the suction nozzle to move downwards to absorb the chip on the wafer, then the rocker arm swings to drive the suction nozzle to rotate (the suction nozzle also moves upwards while the rocker arm swings to drive the suction nozzle to rotate), the chip is conveyed above the lead frame, and then the rocker arm drives the suction nozzle to move downwards to fix the chip on the lead frame; generally, the time of swinging the rocker arm once is within 150ms-250ms, and when a chip is sucked or fixed on a lead frame, the suction nozzle needs to be stopped for tens of milliseconds or even tens of milliseconds, so that the time of swinging the rocker arm back and forth is prolonged, and every time a chip is fixed, the suction nozzle needs to be stopped once, suck the chip and be stopped once, and fix the chip on the lead frame, so that the die bonding efficiency is affected, the chip cannot be well attached to the lead frame, and the die bonding quality cannot be guaranteed.
Disclosure of Invention
The die bonder can improve die bonding efficiency, and can fully diffuse and melt materials at contact positions of a chip and a lead frame so as to reduce the risk of crack of a welding interface caused by difference of thermal expansion coefficients of different materials of the interface at a later chip welding interface, namely improve die bonding quality of the chip.
Therefore, in a first aspect, an embodiment of the present application provides a die bonder, which includes a bearing mechanism, a die taking mechanism, and a pressing mechanism; the bearing mechanism comprises a lead frame, and a die fixing position for bearing the chip is arranged on the lead frame; the crystal taking mechanism comprises a rocker arm and a suction nozzle, and the suction nozzle is connected to the free end of the rocker arm; the pressing mechanism comprises a pressing plate which is movably connected above the lead frame and arranged corresponding to the die bonding position, and the pressing plate is configured to reciprocate up and down relative to the die bonding position so as to press the chip on the die bonding position.
In some possible implementations, the loading mechanism includes a frame stage and a frame drive; the lead frame is arranged on the frame carrying platform in a sliding manner; the power output end of the frame driving device is connected with the lead frame, and the frame driving device drives the lead frame to move along a first direction and relative to the frame carrying platform.
In some possible implementation manners, the crystal taking mechanism further comprises a crystal taking driving device, a power output end of the crystal taking driving device is connected with the rocker arm, and the crystal taking driving device drives the rocker arm to swing back and forth; the bearing mechanism further comprises a platform driving device, the power output end of the platform driving device is connected with the frame platform, and the platform driving device drives the frame platform to move along a second direction; the pressing mechanism further comprises a pressing driving device, a power output end of the pressing driving device is connected with the pressing plate, and the pressing driving device drives the pressing plate to move up and down relative to the lead frame; the crystal taking driving device is electrically connected with the carrying platform driving device and the frame driving device, and the frame driving device is electrically connected with the pressing driving device; the second direction is perpendicular to the first direction.
In some possible implementation manners, the lead frame is provided with N rows and M columns of the die-bonding sites, the N rows of the die-bonding sites are arranged along a first direction, and the M columns of the die-bonding sites are arranged along a second direction, wherein N is greater than or equal to 1, M is greater than or equal to 1, and N, M are all natural numbers.
In some possible implementations, an upper surface of the lead frame is recessed inward to form the die-bonding sites; one surface of the pressing plate facing the lead frame is provided with a plurality of abutting convex strips arranged at intervals and a plurality of abutting convex blocks arranged at intervals; the two adjacent abutting convex strips are matched and abutted to two opposite sides of one die bonding position, and the abutting convex blocks are abutted to the chips on the die bonding positions.
In some possible implementations, the pressing plate is provided with 2 rows of the abutting convex strips and 1 row of the abutting convex blocks, and the 1 row of the abutting convex blocks is arranged between the 2 rows of the abutting convex strips.
In some possible implementation manners, the die bonder further includes a nitrogen supply mechanism, where the nitrogen supply mechanism includes a plurality of nitrogen output ports, and the nitrogen output ports are distributed on the frame carrier at intervals along the first direction.
In some possible implementations, the loading mechanism further includes a stage heating device configured to heat the frame stage; the nitrogen supply mechanism comprises a temperature sensor, a plurality of nitrogen output pipes and a plurality of heating wires; the temperature sensor is provided with a plurality of temperature probes, and the temperature probes are connected to the frame carrier and the nitrogen output pipe; the nitrogen output pipe is provided with the nitrogen output port, and the heating wires are wound on the nitrogen output pipe in a one-to-one correspondence manner.
In a second aspect, the present application further provides a die bonding method, based on the die bonding machine according to the first aspect, where the die bonding machine includes the loading mechanism, the die taking mechanism, the pressing mechanism, and the nitrogen supply mechanism, where the loading mechanism includes the lead frame, the frame stage, the frame driving device, the stage driving device, and the stage heating device, the die taking mechanism includes the rocker arm, the suction nozzle, and the die taking driving device, the pressing mechanism includes the pressing plate, the pressing driving device, and the nitrogen supply mechanism includes the temperature sensor, the plurality of nitrogen output tubes, and the plurality of heating wires;
the die bonding method comprises the following steps:
s1, heating the frame carrying platform, and acquiring a first real-time temperature of the frame carrying platform;
s2, heating each nitrogen output pipe, and acquiring a second real-time temperature of each nitrogen output pipe;
s3, controlling the difference between the first real-time temperature and each second real-time temperature to be within 30 ℃;
s4, swinging the rocker arm to drive the suction nozzle to move, taking the crystal from the wafer and placing the crystal on the lead frame;
s5, moving the frame carrying platform to the second direction by the width of a die bonding position
S6, repeating the step S4;
s7, circularly performing the step S5 and the step S4 until M chips are arranged on the same row of die bonding positions on the lead frame;
s8, moving the lead frame by the length of one die bonding position along the first direction, and enabling the pressing plate to move downwards so as to simultaneously press M chips on the same row of die bonding positions on the lead frame;
s9, moving the frame carrying platform to the direction opposite to the second direction by the width of (M-1) die bonding positions;
s10, repeating the step S4;
s11, circularly performing the steps S4, S5, S6, S7, S8, S9 and S10 until all the die bonding positions on the lead frame have chips.
In some possible implementation manners, the die bonding method further includes the following steps:
and S12, arranging the nitrogen output ports of the nitrogen output pipes on the frame carrier at intervals along the first direction, and gradually increasing the second real-time temperature of the nitrogen output pipes arranged along the first direction and then gradually decreasing the second real-time temperature of the nitrogen output pipes arranged along the first direction.
The application provides a die bonder and a die bonding method, compared with the prior art, the die bonder has the following beneficial effects:
in the die bonder, the rocker arm swings to drive the suction nozzle to move, so that a chip is sucked from a wafer and is conveyed to a die bonding position of a lead frame, and the pressing plate can reciprocate up and down relative to the die bonding position to press the chip on the die bonding position, so that the chip can be fully covered by solder paste on the die bonding position, the contact part of the chip and the die bonding position can be fully melted, and the die bonding quality is ensured; the die bonding positions on the lead frame are generally distributed in a matrix manner, the suction nozzles can place chips on a row of die bonding positions on the lead frame, and then the pressing plate presses the chips on the row of die bonding positions together to fix a row of chips at the same time; the utility model provides a solid brilliant machine's rocking arm and suction nozzle only carry the work on chip to the lead frame, can not have the action of pressing the chip, can not stop to get off to press the chip, but press the chip on a row of solid brilliant position simultaneously by pressing the pressure board in unison, can remove the dead time of suction nozzle from like this, do the unified processing of pressing to the chip on a row of solid brilliant positions, can save solid brilliant time, improve solid brilliant efficiency, and can guarantee solid brilliant quality.
The die bonding method applies the die bonder, can create an oxygen-free environment during die bonding, and prevents the chip or the lead frame from being oxidized due to oxygen contact when the temperature of the chip or the lead frame is high; and the temperature of the nitrogen is close to that during die bonding, the nitrogen does not have excessive heat exchange with the chip and the lead frame, and the temperature reduction of the chip can be milder so as to prevent the chip fixed on the die bonding position from accidents such as die explosion and the like.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts. Further, in the drawings, like parts are denoted by like reference numerals, and the drawings are not drawn to actual scale.
Fig. 1 is a schematic structural diagram of a die bonding part of a die bonding machine according to an embodiment of the present application;
FIG. 2 is a schematic structural diagram of a die bonding part of a die bonder in another embodiment of the present application;
FIG. 3 is a schematic view of a lead frame of the die bonder shown in FIG. 1;
FIG. 4 is a schematic view of a pressing plate of the die bonder shown in FIG. 1;
description of reference numerals:
1. a loading mechanism; 11. a lead frame; 12. fixing a crystal position; 13. a frame stage; 2. a crystal taking mechanism; 21. a rocker arm; 22. a suction nozzle; 3. a pressing mechanism; 31. a pressing plate; 311. abutting the convex strip; 312. abutting the bump; 32. a pressing drive device; 4. a nitrogen supply mechanism; 41. a nitrogen gas output pipe; 42. heating wires; 100. a first direction; 200. a second direction.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As shown in fig. 1 to 4, in a first aspect, the embodiment of the present application provides a die bonder, which includes a loading mechanism 1, a die taking mechanism 2, and a pressing mechanism 3; the bearing mechanism 1 comprises a lead frame 11, and a die bonding position 12 for bearing a chip is arranged on the lead frame 11; the crystal taking mechanism 2 comprises a rocker arm 21 and a suction nozzle 22, and the suction nozzle 22 is connected with the free end of the rocker arm 21; the pressing mechanism 3 includes a pressing plate 31, the pressing plate 31 is movably connected above the lead frame 11 and is disposed corresponding to the die bonding position 12, and the pressing plate 31 is configured to reciprocate up and down with respect to the die bonding position 12 to press the chip on the die bonding position 12.
Based on the technical scheme, the rocker arm 21 swings to drive the suction nozzle 22 to move, so that the chips are sucked from the wafer and are conveyed to the die bonding position 12 of the lead frame 11, and the pressing plate 31 can reciprocate up and down relative to the die bonding position 12 to press the chips on the die bonding position 12, so that the chips can be fully covered by the solder paste on the die bonding position 12, the contact part between the chips and the die bonding position 12 can be fully melted, and the die bonding quality is ensured; the die bonding positions 12 on the lead frame 11 are generally distributed in a matrix, the suction nozzles 22 can place chips on a row of die bonding positions 12 on the lead frame 11, and then the pressing plate 31 presses the chips on the row of die bonding positions 12 together to fix a row of chips at the same time; the utility model provides a work on solid brilliant machine's rocking arm 21 and suction nozzle 22 only carry chip to lead frame 11, can not have the action of pressing the chip, can not stop to get off to press the chip, but press the board 31 unified chip on one row of solid brilliant position 12 simultaneously by pressing, can remove the dead time of suction nozzle 22 from like this, do the unified processing of pressing to the chip on one row of solid brilliant position 12, can save solid brilliant time, improve solid brilliant efficiency, and can guarantee solid brilliant quality.
In the present application, the time of one swing of the swing arm 21 is within 130ms, because the swing arm 21 does not stop, or the time of the swing arm 21 stopping to allow the suction nozzle 22 to suck the chip is negligible, then, the time of one round trip of the swing arm 21 is within 260ms, the chip on one wafer can be transported to the lead frame 11 once round trip, and assuming that there are 20k chips on the wafer, the time of the operation of the swing arm 21 is 260ms times 20k, which is 5200s, for about 87 minutes, and the pressing time of the pressing plate 31 is generally not more than 90 minutes; in the existing die bonder, 20k chips are generally fixed for more than 2 hours, so the die bonder has extremely high die bonding efficiency.
In the present application, the loading mechanism 1 includes a frame stage 13 and a frame driving device (not shown in the drawings); the lead frame 11 is arranged on the frame carrying platform 13 in a sliding manner; the power output end of the frame driving device is connected with the lead frame 11, the frame driving device drives the lead frame 11 to move along the first direction 100 and relative to the frame carrier 13, so that after all chips are arranged on one row of die bonding positions 12, the next row of die bonding positions 12 can be quickly switched, and the chips are placed on the next row of die bonding positions 12, so that the die bonding work can be performed orderly.
Further, the crystal taking mechanism 2 further comprises a crystal taking driving device (not shown in the drawing), a power output end of the crystal taking driving device is connected with the rocker arm 21, and the crystal taking driving device drives the rocker arm 21 to swing back and forth; the loading mechanism 1 further comprises a stage driving device (not shown in the drawings), a power output end of the stage driving device is connected with the frame stage 13, and the stage driving device drives the frame stage 13 to move along the second direction 200; the pressing mechanism 3 further comprises a pressing driving device 32, a power output end of the pressing driving device 32 is connected with the pressing plate 31, and the pressing driving device 32 drives the pressing plate 31 to move up and down relative to the lead frame 11; wherein, the crystal taking driving device is electrically connected with the carrier driving device and the frame driving device, and the frame driving device is electrically connected with the pressing driving device 32; the second direction 200 is perpendicular to the first direction 100.
Generally, the die attach sites 12 on the lead frame 11 are distributed in a matrix, a chip is placed on one die attach site 12 in a row of die attach sites 12, and then the position of the lead frame 11 needs to be moved by the width of one die attach site 12 in the second direction 200, so as to place a chip on the next die attach site 12 in the row of die attach sites 12; here, the stage driving device can drive the frame stage 13 to move along the second direction 200, so as to drive the lead frame 11 to move along the second direction 200 by the width distance of one die bonding position 12, so that the suction nozzle 22 can place a chip on the empty die bonding position 12; after the placement is completed, the stage driving device drives the frame stage 13 to move along the second direction 200 again, so as to drive the lead frame 11 to move along the second direction 200 again by the width distance of one die bonding position 12, so that the suction nozzle 22 places the chip on the empty die bonding position 12 again; sequentially carrying out the steps until chips are arranged on a row of die bonding positions 12 on the lead frame 11; then, the frame driving device may drive the lead frame 11 to move along the first direction 100 and relative to the frame stage 13, and move by a length of one die bonding position 12 to rapidly switch to the next row of die bonding positions 12, at this time, the pressing driving device 32 may drive the pressing plate 31 to move up and down relative to the lead frame 11 to press the chips on the previous row of die bonding positions 12; then, the stage driving device drives the frame stage 13 to move in the direction opposite to the second direction 200, so that the first die bonding position 12 of the next row of die bonding positions 12 is located right below the suction nozzle 22, and starts to place a chip on the next row of die bonding positions 12; the above process is repeated until all die bonding sites 12 on the lead frame 11 have chips.
In the present application, the stage driving device may also drive the frame stage 13 to move along the first direction 100, so as to correct the error of the lead frame 11 being pulled, and compensate the lead frame 11 for the distance adjustment in the first direction 100.
In the application, the crystal taking driving device is electrically connected with the stage driving device and the frame driving device, the frame driving device is electrically connected with the pressing driving device 32, the crystal taking driving device, the stage driving device and the frame driving device and the pressing driving device 32 can work cooperatively, and correspondingly operate according to the sequence of the processes to drive the rocker arm 21, the frame stage 13, the lead frame 11 or the pressing plate 31 to move, so as to ensure that the crystal fixing work can be performed orderly; the pick-up drive device, the space between the stage drive device and the frame drive device, and the space between the frame drive device and the press drive device 32 can be controlled by an application program, and the application program will not be described here, but the process is set by the application program, and the pick-up drive device, the stage drive device, the frame drive device, or the press drive device 32 is controlled to operate accordingly, so that the sensor can be omitted, the cost can be saved, and the wiring of a control circuit can be reduced.
In the present application, the crystal taking driving device, the stage driving device, the frame driving device, and the pressing driving device 32 may be linear motors, servomotors, stepping motors, air cylinders, or other structures capable of performing linear driving, and the detailed driving method of the crystal taking driving device, the stage driving device, the frame driving device, or the pressing driving device 32 follows the driving method common in the prior art, and will not be described here.
In the present application, the second direction 200 is perpendicular to the first direction 100, N rows of M rows of die attach sites 12 are disposed on the lead frame 11, the N rows of die attach sites 12 are arranged along the first direction 100, the M rows of die attach sites 12 are arranged along the second direction 200, where N is greater than or equal to 1, M is greater than or equal to 1, and N, M are natural numbers, and the pressing plate 31 can fix the chips on the M die attach sites 12 in one row at a time; the first direction 100 is the arrangement direction of the N rows of die bonding sites 12, and the second direction 200 is the arrangement direction of the M rows of die bonding sites 12, so that chips can be placed on all die bonding sites 12 to be die bonded on the lead frame 11, and the pressing plate 31 can press the chips conveniently.
Specifically, the upper surface of the lead frame 11 is recessed inward to form a die bonding site 12; a plurality of abutting convex strips 311 and a plurality of abutting convex blocks 312 which are arranged at intervals are arranged on one surface of the pressing plate 31 facing the lead frame 11; two adjacent abutting convex strips 311 are matched and abutted to two opposite sides of one die bonding position 12, the abutting convex blocks 312 are abutted to the chip on the die bonding position 12, and the abutting convex strips 311 can prevent the lead frame 11 from moving when being pressed so as to ensure that the abutting convex blocks 312 can well press the chip.
In order to further ensure the effect of the abutting convex blocks 312 pressing the chip, the pressing plate 31 of the present application is provided with 2 rows of abutting convex strips 311 and 1 row of abutting convex blocks 312, and the 1 row of abutting convex blocks 312 is provided between the 2 rows of abutting convex strips 311.
Generally, during die bonding, in order to ensure that a chip can be well attached to the solder paste on the die bonding site 12 and ensure the die bonding effect, the temperature of the chip is generally more than one hundred degrees centigrade to several hundred degrees centigrade, so that the solder paste or the silver paste is melted; and the lead frame 11 is typically copper or a copper alloy.
Therefore, in this application, the die bonder further includes a nitrogen supply mechanism 4, the nitrogen supply mechanism 4 includes a plurality of nitrogen gas output ports, the nitrogen gas output ports are distributed on the frame carrier 13 at intervals along the first direction 100, the nitrogen gas output ports can output nitrogen gas, and the air of the frame carrier 13 is pushed away, so that an oxygen-free environment is created for the chip and the lead frame 11 on the frame carrier 13, and the chip and the lead frame 11 are prevented from being oxidized due to oxygen contact.
Further, the loading mechanism 1 further includes a stage heating device (not shown in the drawings) configured to heat the frame stage 13; the nitrogen supply mechanism 4 comprises a temperature sensor, a plurality of nitrogen gas output pipes 41 and a plurality of heating wires 42; the temperature sensor is provided with a plurality of temperature probes which are connected with the frame carrier 13 and the nitrogen output pipe 41; the nitrogen output pipe 41 is provided with a nitrogen output port, the heating wires 42 are wound on the nitrogen output pipe 41 in a one-to-one correspondence manner, the frame carrier 13 can be heated by the carrier heating device, the heating wires 42 can heat the nitrogen output pipe 41, and the temperatures of the nitrogen output pipe 41 and the frame carrier 13 are controlled through the temperature sensors, namely, the temperature of the nitrogen and the temperature of the chip and the temperature of the lead frame 11 are indirectly controlled, so that the temperature of the nitrogen is close to that of the chip and the lead frame 11 during crystal fixation, the nitrogen cannot exchange heat with the chip and the lead frame 11 excessively, the temperature of the chip can be cooled more gently, and accidents such as crystal explosion and the like of the chip fixed on the crystal fixation position 12 can be prevented.
Generally, the temperature for preheating frame stage 13 is about 250 ℃, and when die bonding is performed on lead frame 11, the optimum temperature of lead frame 11 is about 270 ℃, so the temperature of nitrogen gas is generally maintained at about 250 ℃ to about-270 ℃; in addition, the temperature of the portion of the frame carrier 13 distributed along the first direction 100 is distributed from 250 ℃ to 270 ℃ and then to 250 ℃, and the temperature of the nitrogen gas is also distributed along the first direction 100 from 250 ℃ to 270 ℃ and then to 250 ℃, so that excessive heat exchange between the nitrogen gas and the chip or the lead frame 11 can be prevented, and the chip is prevented from being cooled unevenly, causing chip crystal explosion and the like. In practice, however, the difference between the temperature of the nitrogen and the temperature of the chip during die bonding is within-30 ℃, so that the chip can be well cooled.
The microscope stage heating device can also adopt the heating wires 42, and the heating wires 42 are arranged along the first direction 100, so that the frame microscope stage 13 is uniformly heated, and the temperature difference of each part is not large.
The application also provides a die bonding method in a second aspect, based on the die bonding machine as described in the first aspect, the die bonding machine includes a loading mechanism 1, a die taking mechanism 2, a pressing mechanism 3 and a nitrogen supply mechanism 4, wherein the loading mechanism 1 includes a lead frame 11, a frame stage 13, a frame driving device, a stage driving device and a stage heating device, the die taking mechanism 2 includes a rocker arm 21, a suction nozzle 22 and a die taking driving device, the pressing mechanism 3 includes a pressing plate 31 and a pressing driving device 32, and the nitrogen supply mechanism 4 includes a temperature sensor, a plurality of nitrogen output tubes 41 and a plurality of heating wires 42; the die bonding method comprises the following steps:
s1, heating the frame carrier 13, and acquiring a first real-time temperature of the frame carrier 13;
s2, heating each nitrogen output pipe 41, and acquiring a second real-time temperature of each nitrogen output pipe 41;
s3, controlling the difference between the first real-time temperature and each second real-time temperature to be within 30 ℃;
s4, swinging the rocker arm 21 to drive the suction nozzle 22 to move, taking crystals from the wafer and placing the crystals on the lead frame 11;
s5, moving the frame carrying platform 13 to the second direction 200 by the width of the die bonding position 12
S6, repeating the step S4;
s7, circularly performing the step S5 and the step S4 until M chips are arranged on the same row of die bonding positions 12 on the lead frame 11;
s8, moving the lead frame 11 by the length of one die bonding position 12 along the first direction 100, and moving the pressing plate 31 downwards to simultaneously press M chips on the same row of die bonding positions 12 on the lead frame 11;
s9, moving the frame stage 13 in the direction opposite to the second direction 200 by the width of (M-1) die bonding sites 12;
s10, repeating the step S4;
s11, step S4, step S5, step S6, step S7, step S8, step S9 and step S10 are circularly performed until all the die bonding sites 12 on the lead frame 11 have chips.
Further, the die bonding method further comprises the following steps:
s12, arranging the nitrogen output ports of the nitrogen output pipes 41 on the frame carrier 13 at intervals along the first direction 100, and gradually increasing the second real-time temperature of each of the nitrogen output pipes 41 arranged along the first direction 100 and then gradually decreasing the second real-time temperature.
The die bonding method applies the die bonder, can create an oxygen-free environment during die bonding, and prevents the chip or lead frame 11 from being oxidized due to oxygen contact when the temperature is high; the temperature of the nitrogen is close to that during die bonding, the nitrogen does not have excessive heat exchange with the chip and the lead frame 11, and the temperature of the chip can be cooled more gently, so that accidents such as die explosion and the like of the chip fixed on the die bonding position 12 can be prevented; generally, the temperature for preheating frame stage 13 is about 250 ℃, and when die bonding is performed on lead frame 11, the optimum temperature of lead frame 11 is about 270 ℃, so the temperature of nitrogen gas is generally maintained at about 250 ℃ to about-270 ℃; in addition, the temperature of the portion of the frame carrier 13 distributed along the first direction 100 is distributed from 250 ℃ to 270 ℃ and then to 250 ℃, and the temperature of the nitrogen gas is also distributed along the first direction 100 from 250 ℃ to 270 ℃ and then to 250 ℃, so that excessive heat exchange between the nitrogen gas and the chip or the lead frame 11 can be prevented, and the chip is prevented from being cooled unevenly, causing chip crystal explosion and the like. In practice, however, the difference between the temperature of the nitrogen and the temperature of the chip during die bonding is within-30 ℃, so that the chip can be well cooled.
It should be noted that references in the specification to "one embodiment," "an example embodiment," "some embodiments," etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is within the knowledge of one skilled in the art to effect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.
It should be readily understood that "on … …", "above … …" and "above … …" in this disclosure should be interpreted in its broadest sense such that "on … …" means not only "directly on something", but also includes the meaning of "on something" with intervening features or layers therebetween, and "above … …" or "above … …" includes not only the meaning of "above something" or "above" but also includes the meaning of "above something" or "above" with no intervening features or layers therebetween (i.e., directly on something).
Furthermore, spatially relative terms, such as "below," "lower," "above," "upper," and the like, may be used herein for ease of description to describe one element or feature's illustrated relationship to another element or feature. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may have other orientations (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly as well.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (10)
1. A die bonder is characterized by comprising a bearing mechanism, a die taking mechanism and a pressing mechanism;
the bearing mechanism comprises a lead frame, and a die bonding position for bearing the chip is arranged on the lead frame;
the crystal taking mechanism comprises a rocker arm and a suction nozzle, and the suction nozzle is connected to the free end of the rocker arm;
the pressing mechanism comprises a pressing plate which is movably connected above the lead frame and arranged corresponding to the die bonding position, and the pressing plate is configured to reciprocate up and down relative to the die bonding position so as to press the chip on the die bonding position.
2. The die bonder of claim 1, wherein said holding mechanism comprises a frame carrier and a frame driving device;
the lead frame is arranged on the frame carrying platform in a sliding manner;
the power output end of the frame driving device is connected with the lead frame, and the frame driving device drives the lead frame to move along a first direction and relative to the frame carrying platform.
3. The die bonder as claimed in claim 2, wherein said die pick-up mechanism further comprises a die pick-up driving device, a power output end of said die pick-up driving device is connected with said rocker arm, said die pick-up driving device drives said rocker arm to swing back and forth;
the bearing mechanism further comprises a platform driving device, the power output end of the platform driving device is connected with the frame platform, and the platform driving device drives the frame platform to move along a second direction;
the pressing mechanism further comprises a pressing driving device, a power output end of the pressing driving device is connected with the pressing plate, and the pressing driving device drives the pressing plate to move up and down relative to the lead frame;
the crystal taking driving device is electrically connected with the carrying platform driving device and the frame driving device, and the frame driving device is electrically connected with the pressing driving device;
the second direction is perpendicular to the first direction.
4. The die bonder of claim 3, wherein N rows and M columns of the die bond sites are arranged on the lead frame, the N rows of the die bond sites are arranged along a first direction, the M columns of the die bond sites are arranged along a second direction, wherein N is greater than or equal to 1, M is greater than or equal to 1, and N, M are all natural numbers.
5. The die bonder of claim 1, wherein the upper surface of the lead frame is recessed inward to form the die bonding site;
one surface of the pressing plate facing the lead frame is provided with a plurality of abutting convex strips arranged at intervals and a plurality of abutting convex blocks arranged at intervals;
the two adjacent abutting convex strips are matched and abutted to two opposite sides of one die bonding position, and the abutting convex blocks are abutted to the chips on the die bonding positions.
6. The die bonder of claim 5, wherein 2 rows of the abutting convex strips and 1 row of the abutting convex blocks are arranged on the pressing plate, and the 1 row of the abutting convex blocks are arranged between the 2 rows of the abutting convex strips.
7. The die bonder of claim 2, further comprising a nitrogen supply mechanism, wherein the nitrogen supply mechanism comprises a plurality of nitrogen gas outlets, and the nitrogen gas outlets are distributed on the frame carrier at intervals along the first direction.
8. The die bonder of claim 7, wherein said loading mechanism further comprises a stage heating device configured to heat said frame stage;
the nitrogen supply mechanism comprises a temperature sensor, a plurality of nitrogen output pipes and a plurality of heating wires;
the temperature sensor is provided with a plurality of temperature probes, and the temperature probes are connected to the frame carrier and the nitrogen output pipe;
the nitrogen output pipe is provided with the nitrogen output port, and the heating wires are wound on the nitrogen output pipe in a one-to-one correspondence manner.
9. A die bonder based on any one of claims 1-8, wherein the die bonder comprises the loading mechanism, the die taking mechanism, the pressing mechanism and the nitrogen supply mechanism, wherein the loading mechanism comprises the lead frame, the frame carrier, the frame driving device, the carrier driving device and the carrier heating device, the die taking mechanism comprises the rocker arm, the suction nozzle and the die taking driving device, the pressing mechanism comprises the pressing plate and the pressing driving device, and the nitrogen supply mechanism comprises the temperature sensor, a plurality of nitrogen output tubes and a plurality of heating wires;
the method is characterized by comprising the following steps:
s1, heating the frame carrying platform, and acquiring a first real-time temperature of the frame carrying platform;
s2, heating each nitrogen output pipe, and acquiring a second real-time temperature of each nitrogen output pipe;
s3, controlling the difference between the first real-time temperature and each second real-time temperature to be within 30 ℃;
s4, swinging the rocker arm to drive the suction nozzle to move, taking the crystal from the wafer and placing the crystal on the lead frame;
s5, moving the frame carrying platform to the second direction by the width of a die bonding position
S6, repeating the step S4;
s7, circularly performing the step S5 and the step S4 until M chips are arranged on the same row of die bonding positions on the lead frame;
s8, moving the lead frame by the length of one die bonding position along the first direction, and enabling the pressing plate to move downwards so as to simultaneously press M chips on the same row of die bonding positions on the lead frame;
s9, moving the frame carrying platform to the direction opposite to the second direction by the width of (M-1) die bonding positions;
s10, repeating the step S4;
s11, circularly performing the steps S4, S5, S6, S7, S8, S9 and S10 until all the die bonding positions on the lead frame have chips.
10. The die bonding method according to claim 9, further comprising the steps of:
and S12, arranging the nitrogen output ports of the nitrogen output pipes on the frame carrier at intervals along the first direction, and gradually increasing the second real-time temperature of the nitrogen output pipes arranged along the first direction and then gradually decreasing the second real-time temperature of the nitrogen output pipes arranged along the first direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210772025.8A CN115036243A (en) | 2022-06-30 | 2022-06-30 | Die bonder and die bonding method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210772025.8A CN115036243A (en) | 2022-06-30 | 2022-06-30 | Die bonder and die bonding method |
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| CN115036243A true CN115036243A (en) | 2022-09-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116631929A (en) * | 2023-07-24 | 2023-08-22 | 广东工业大学 | Chip transfer method, system, equipment and medium based on swing arm die bonder |
-
2022
- 2022-06-30 CN CN202210772025.8A patent/CN115036243A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116631929A (en) * | 2023-07-24 | 2023-08-22 | 广东工业大学 | Chip transfer method, system, equipment and medium based on swing arm die bonder |
| CN116631929B (en) * | 2023-07-24 | 2024-01-05 | 广东工业大学 | Chip transfer method, system, equipment and medium based on swing arm die bonder |
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