CN1150329A - Welding method of element on matrix and apparatus thereof - Google Patents
Welding method of element on matrix and apparatus thereof Download PDFInfo
- Publication number
- CN1150329A CN1150329A CN96108126A CN96108126A CN1150329A CN 1150329 A CN1150329 A CN 1150329A CN 96108126 A CN96108126 A CN 96108126A CN 96108126 A CN96108126 A CN 96108126A CN 1150329 A CN1150329 A CN 1150329A
- Authority
- CN
- China
- Prior art keywords
- welding
- welding material
- preheating
- scolder
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Abstract
The invention provides a method and apparatus for welding parts such as a semiconductor chip on base bodies such as a lead frame without the need for being supplied with anti-oxidation shielding gas and reducing gas during welding, the welding method includes procedures of supplying welding materials to welding positions of parts on the base body; preheating the parts and making the parts contact with the welding materials; and heating the positions at which the welding materials of the base body are supplied from the back face so as to fuse the welding materials. The welding set comprises an apparatus for supplying the welding materials to the welding positions of the parts on the base body; and an apparatus for preheating the parts and making the parts contact with the welding materials. The invention also includes an apparatus for fusing the welding materials.
Description
The present invention relates to make after the weld metal fusions such as scolding tin or silver solder the suitable welding method and the welder that part are welded on the matrix, relate in particular to semiconductor chip is welded to the most suitable welding method and welder on the lead frame.
Fig. 4 is the overall construction drawing of the welder of existing part and matrix, and Fig. 5 is the weld part part section oblique view that installs among Fig. 4, and Fig. 6 is the profile of the protection against oxidation gas portion in the device of Fig. 4.The welding method of using this existing welder is scolder 48 to be supplied with the backing plate portion 45 of warmed-up IC lead frame 41 on heating station 57; make again protection against oxidation gas and reducing gases 56 (with reference to Fig. 6) on one side flow through heating and melting scolder 48, Yi Bian carry out the welding of IC chip 58.
Secondly, with reference to Fig. 4, Fig. 5, and Fig. 6 the action of this existing apparatus is described.In these figure, send IC lead frame 41 to conveying 43 by frame supply unit 42, carry IC lead frame 41 by 44 steppings of frame feeding portion.When backing plate portion 45 arrives scolder feed point 46, heating station 57 is risen, preheating backing plate portion 45 carries out the preheating of scolder 48.
By wafer transport portion 50 wafer is placed into IC from wafer storage part 49 and picks up portion 51.Then, deliver on the positioning table 52 after by IC chip dislocation portion 53 IC chip 58 absorption.Then, wait is positioned by IC chip location division 54.Scolder 48 is supplied with backing plate portions 45, on one side preheating stepping on one side flow to IC lead frame 41, the heating station 57 by heater heats to 360 ℃ is risen, carry out 360 ℃ of preheatings, make scolder 48 fusions.At this moment, protection against oxidation gas and reducing gases 56 are flowed in the protection gas hood 55, to prevent scolder 48 oxidations.Backing plate portion 45 arrives chips welding and put 59 o'clock, on the scolder 48 that IC chip 58 behind the location has been displaced to by soldering tip 60 fusions.In Fig. 4, symbol 47 is scolder supply units of scolder 48 being supplied with backing plate portion 45.
In the welding method of the existing welder of this employing, in order to obtain good weldability, must feed protection gas and the reducing gases that prevents the scolder oxidation, therefore to spend unnecessary cost.In addition,, when therefore switching the IC lead frame, must change protection gas hood 55 etc., have long problem switching time owing to use anti-oxidation gas and reducing gases.
The present invention develops in order to solve above-mentioned prior art problem; purpose is to provide a kind of welding method and welder that welds on the part base solid; even without protection against oxidation gas and reducing gases; also good weldability can be arranged; owing to do not use protection against oxidation gas and reducing gases; the gas hood 55 etc. so also do not need protection when matrixes such as switching IC lead frame, can shorten the switching time of welder significantly.
The method that part is welded on the matrix of the present invention is characterised in that: comprise the operation that welding materials such as scolding tin or silver solder is supplied to the welding position of part on the matrix; Preheating part and the operation that part is contacted with welding material; And the operation that makes the welding material fusion from the back side heating of the welding material position of supplying with matrix.
Of the present inventionly part is welded to the device of using on the matrix is characterised in that: comprise the device that welding materials such as scolding tin or silver solder is supplied to the welding position of part on the matrix; Preheating part and the device that part is contacted with welding material; And the device that makes the welding material fusion from the back side heating of the welding material position of supplying with matrix.
The method that semiconductor chip is welded on the lead frame of the present invention is characterised in that: comprise scolder is supplied to operation on the backing plate of lead frame; Preheating semiconductor chip and the operation that semiconductor chip is contacted with welding material; And the operation that makes the welding material fusion from the back side heating of the welding material place face of supplying with backing plate.
The device that semiconductor chip is welded on the lead frame of the present invention is characterised in that: comprise scolder is supplied to device on the backing plate of lead frame; Preheating semiconductor chip and the device that semiconductor chip is contacted with welding material; And the device that makes the welding material fusion from the back side heating of the welding material place face of supplying with backing plate.
The method that part is welded on the matrix of the present invention is by the preheating part and part contacted with welding material, from the back side Fast Heating of the welding material position of supplying with matrix the welding material fusion welded simultaneously.At this moment, but also be added with on the welding material from the heat of the part after the preheating and the moment fusion.Therefore, during welding the welding material oxidation few, even do not supply with protection against oxidation gas and reducing gases, also can obtain good welding.
The preheating of above-mentioned part and part and contacting of welding material are preheating parts at first, and it is contacted with welding material.
The welder that part is welded on the matrix of the present invention is by the preheating part and part contacted with welding material, from the back side Fast Heating of the welding material position of supplying with matrix the welding material fusion welded simultaneously.At this moment, but also be added with on the welding material from the heat of the part after the preheating and the moment fusion.Therefore, during welding the welding material oxidation few, even do not supply with protection against oxidation gas and reducing gases, also can obtain good welding.The preheating of above-mentioned part and part and contacting of welding material are preheating parts at first, and it is contacted with welding material.
The method that semiconductor chip is welded on the lead frame of the present invention is by scolder is supplied on the backing plate, preheating semiconductor chip and semiconductor chip is contacted with welding material is simultaneously from the back side heating of the welding material place face of supplying with backing plate and the welding material fusion is welded.At this moment, in the heat that also is added with on the welding material from the semiconductor chip after the preheating, but thereby moment fusion.Therefore, during welding the welding material oxidation few, even do not supply with protection against oxidation gas and reducing gases, also can obtain good welding.The preheating of above-mentioned semiconductor chip and semiconductor chip and contacting of welding material are preheating semiconductor chips at first, and it is contacted with welding material.
The device that semiconductor chip is welded on the lead frame of the present invention is by scolder is supplied on the backing plate, preheating semiconductor chip and semiconductor chip is contacted with welding material is then from the back side heating of the welding material place face of supplying with backing plate and the welding material fusion is welded.At this moment, in the heat that also is added with on the welding material from the semiconductor chip after the preheating, but thereby moment fusion.Therefore, during welding the welding material oxidation few, even do not supply with protection against oxidation gas and reducing gases, also can obtain good welding.The preheating of above-mentioned semiconductor chip and semiconductor chip and contacting of welding material are preheating semiconductor chips at first, and it is contacted with welding material.
Fig. 1 is the overall construction drawing of the welder of the semiconductor chip backing plate in the expression embodiments of the invention 1.
Fig. 2 is the part sectioned view of device shown in Figure 1.
Fig. 3 is the overall construction drawing of the welder of the semiconductor chip backing plate in the expression embodiments of the invention 2.
Fig. 4 is the overall construction drawing of the welder of expression conventional semiconductor chip backing plate.
Fig. 5 is the stravismus part sectioned view of the weld part of presentation graphs 4 shown devices.
Fig. 6 is the profile of the protection gas portion of presentation graphs 4 shown devices.
Symbol description is as follows:
1 IC lead frame supply unit
2,2a frame feeding portion
3,3a frame storage box
4 wafer storage parts
5 wafer transport portions
6 IC pick up portion
7 scolder supply units
8 IC chip dislocation portions
9 IC chip location divisions
10 soldering tips
11 pads
12 conveyings
13 backing plates
14 IC lead frames
15 positioning tables
16 heaters
17 chuck preheating parts
18 chucks
19 IC chips
20 heating stations
21 heaters
22 scolders
Embodiment 1:
Followingly embodiments of the invention 1 are described according to Fig. 1 and Fig. 2.Fig. 1 is the overall construction drawing of the welder of the semiconductor chip among the expression embodiment 1.Fig. 2 is the part sectioned view of this device.In Fig. 1 and Fig. 2, the 1st, IC lead frame supply unit, the 2nd, frame feeding portion, the 3rd, frame storage box, the 4th, the wafer storage part, the 5th, wafer transport portion, the 6th, IC picks up portion, and the 7th, the scolder supply unit, the 8th, IC chip dislocation portion, the 9th, IC chip location division, the 10th, soldering tip, the 11st, pad, the 12nd, conveying, the 13rd, backing plate, the 14th, IC lead frame, the 15th, positioning table, the 16th, heater, the 17th, chuck preheating part, the 18th, chuck, the 19th, IC chip, 20 heating stations, the 21st, heater, the 22nd, scolder.
Secondly, the action of embodiment 1 is described.In said structure, by IC lead frame supply unit 1 IC lead frame 14 is displaced on the conveying 12, carry out the stepping feeding of IC lead frame 14 by delivery section 2.When the backing plate 13 of IC lead frame arrives pad 11, scolder 22 is displaced on the backing plate 13 by scolder supply unit 7.To be placed into IC from the wafer of wafer resettlement section 4 by wafer transport portion 5 picks up in the portion 6.Then, be transported to positioning table 15 by IC chip dislocation portion 8 after with chip 19 absorption.The location of this IC chip 19 is carried out in IC chip location division 9, welds (referring to Fig. 2) by soldering tip 10.
At this moment welding method is as follows.At first, scolder 22 is displaced on the backing plate 13 of IC lead frame 14 after, will be by the chuck 18 of soldering tip 10 in the IC chip vacuum suction behind the location on the positioning table 15.This chuck 18 is preheating to 150 ℃ by heater 16 and chuck preheating part 17.By the chuck after the preheating 18 preheating on one side IC chips 19, on one side IC chip 19 is displaced on the scolder 22 on the pad 13.At this moment, 19 of IC chips are preheating to 150 ℃, so make this IC chip 19 touch stage on the scolder 22, scolder 22 not fusions.
Secondly, when being displaced on the scolder 22, make to be heated to 360 ℃ heating station 20 by heater 21 and to rise, it is contacted with backing plate 13 with this IC chip 19.So heating backing plate 13 makes scolder 22 fusions that place above it.So, carry out the welding of backing plate 13 with the IC chip 19 of IC lead frame 14.During these scolder 22 fusions, be added on the scolder 22 not just from 360 ℃ heat of backing plate 13, but also add, so scolder 22 is in the moment fusion from the heat that is preheating to 150 ℃ IC chip 19.Therefore, the time compole that is molten to welding from scolder 22 is short, scolder 22 oxidation hardly during welding.
As mentioned above, if adopt this embodiment 1,, also can carry out the good welding of weldability even use protection against oxidation gas and reducing gases 56 (with reference to Fig. 6) then not resembling in the past.As described in this embodiment 1, preheating the dislocation of IC chip 19 on the scolder 22 and the time context that makes scolder 22 fusions by backing plate 13 heating, the IC chip 19 that has been preferably in preheating is heated by backing plate 13 and to make melt solder on the scolder 22 dislocation the time.If do not do like this, then scolder 22 with IC chip 19 welding before with regard to fusion, can prolong the oxidization time of scolder 22 to a certain extent.
Embodiment 2:
Secondly, the 2nd embodiment of the present invention is described.In the welder of embodiment 1, conveying 12, frame delivery section 2 and frame storage box 3 have only one respectively, but in this embodiment 2, as shown in Figure 3, conveying 12a, frame delivery section 2a and frame storage box 3a are respectively equipped with two.And, two IC chips are placed IC chip location division 9, two IC chips are welded simultaneously.In other words, if adopt embodiment 2, then can weld two lead frames 14 of two IC chips 19 simultaneously respectively with a welder.Therefore, if adopt this embodiment 2, then can produce two semiconductor devices with a welder, compare with using the situation of two semiconductor devices of two welder production among the embodiment 1, can make the price of device reduce by 20～30%, the occupying the space and also can reduce 20～30% of device.
Of the present invention part is welded to method on the matrix; be to make the welding material fusion; when being welded to part on the matrix; also with preheating part on heat be added on the welding material; make welding material moment fusion and weld; so the oxidation of welding material is few during welding, even do not supply with protection against oxidation gas and reducing gases, also can obtain good welding.Therefore, do not need protection against oxidation gas and reducing gases supply unit, can reduce the manufacturing cost of welder significantly.In addition, the gas hood etc. that also do not need protection, the device switching time in the time of shortening the switched lead frame significantly.
Of the present invention part is welded to device on the matrix; be to make the welding material fusion; when being welded to part on the matrix; also with preheating part on heat be added on the welding material; make welding material moment fusion and weld; so the oxidation of welding material is few during welding, even do not supply with protection against oxidation gas and reducing gases, also can obtain good welding.Therefore, do not need protection against oxidation gas and reducing gases supply unit, can reduce the manufacturing cost of welder significantly.In addition, the gas hood etc. that also do not need protection, the device switching time in the time of shortening the switched lead frame significantly.
Of the present invention semiconductor chip being welded to welding method on the lead frame, is when welding, with preheating semiconductor chip on heat be added on the scolder, make its instantaneous fusion, weld at short notice.Therefore, during welding the oxidation of scolder few, even do not supply with protection against oxidation gas and reducing gases, also can obtain good welding.Therefore, do not need protection against oxidation gas and reducing gases supply unit, can reduce the manufacturing cost of welder significantly.In addition, the gas hood etc. that also do not need protection, the device switching time in the time of shortening the switched lead frame significantly.
Of the present invention semiconductor chip being welded to welder on the lead frame, is when welding, with preheating semiconductor chip on heat be added on the scolder, make its instantaneous fusion, weld at short notice.Therefore, during welding the oxidation of scolder few, even do not supply with protection against oxidation gas and reducing gases, also can obtain good welding.Therefore, do not need protection against oxidation gas and reducing gases supply unit, can reduce the manufacturing cost of welder significantly.In addition, the gas hood etc. that also do not need protection, the device switching time in the time of shortening the switched lead frame significantly.
Claims (4)
1. one kind is welded to method on the matrix with part, it is characterized in that: comprise the operation that welding material is supplied to the welding position of part on the matrix; Preheating part and the operation that part is contacted with welding material; And the operation that makes the welding material fusion from the back side heating of the welding material position of supplying with matrix.
2. one kind is welded to the device of using on the matrix with part, it is characterized in that: comprise the device that welding material is supplied to the welding position of part on the matrix; Preheating part and the device that part is contacted with welding material; And the device that makes the welding material fusion from the back side heating of the welding material position of supplying with matrix.
3. one kind is welded to method on the lead frame with semiconductor chip, it is characterized in that: comprise scolder is supplied to operation on the backing plate of lead frame; Preheating semiconductor chip and the operation that semiconductor chip is contacted with welding material; And the operation that makes the welding material fusion from the back side heating of the welding material place face of supplying with backing plate.
4. one kind is welded to device on the lead frame with semiconductor chip, it is characterized in that: comprise scolder is supplied to device on the backing plate of lead frame; Preheating semiconductor chip and the device that semiconductor chip is contacted with welding material; And the device that makes the welding material fusion from the back side heating of the welding material place face of supplying with backing plate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29001195 | 1995-11-08 | ||
| JP290011/95 | 1995-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1150329A true CN1150329A (en) | 1997-05-21 |
| CN1079992C CN1079992C (en) | 2002-02-27 |
Family
ID=17750631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96108126A Expired - Fee Related CN1079992C (en) | 1995-11-08 | 1996-05-23 | Welding method of element on matrix and apparatus thereof |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR970030543A (en) |
| CN (1) | CN1079992C (en) |
| TW (1) | TW359881B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101229602B (en) * | 2008-01-24 | 2010-06-02 | 石开轩 | Method of welding thermistance chip and down lead |
| CN101432095B (en) * | 2006-04-28 | 2013-01-16 | 株式会社电装 | Foam solder and electronic component |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10147789B4 (en) | 2001-09-27 | 2004-04-15 | Infineon Technologies Ag | Device for soldering contacts on semiconductor chips |
| CN102035934A (en) * | 2009-09-30 | 2011-04-27 | 李晓 | Dual-screen portable electronic equipment and management method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5166855A (en) * | 1974-12-05 | 1976-06-09 | Sumitomo Metal Ind | Kannaiidobutsutaino ichikenchihoho |
| JPH0376236A (en) * | 1989-08-18 | 1991-04-02 | Fujitsu Ltd | Bonding |
-
1996
- 1996-01-30 TW TW085101116A patent/TW359881B/en not_active IP Right Cessation
- 1996-05-23 CN CN96108126A patent/CN1079992C/en not_active Expired - Fee Related
- 1996-05-31 KR KR1019960019377A patent/KR970030543A/en active IP Right Grant
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101432095B (en) * | 2006-04-28 | 2013-01-16 | 株式会社电装 | Foam solder and electronic component |
| CN101229602B (en) * | 2008-01-24 | 2010-06-02 | 石开轩 | Method of welding thermistance chip and down lead |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970030543A (en) | 1997-06-26 |
| TW359881B (en) | 1999-06-01 |
| CN1079992C (en) | 2002-02-27 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20020227 |