CN115020559A - Light emitting diode and epitaxial structure thereof - Google Patents
Light emitting diode and epitaxial structure thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 19
- 230000000737 periodic effect Effects 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000000407 epitaxy Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 257
- 229910002601 GaN Inorganic materials 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract
The invention provides a light emitting diode and an epitaxial structure thereof, which at least comprise: the light emitting region buffer layer comprises a light emitting region first buffer layer which is arranged on the N-type semiconductor layer, and the lowest energy gap and the maximum In content of the light emitting region first buffer layer are respectively a and A; the second buffer layer of the light-emitting area is arranged on the first buffer layer of the light-emitting area, and the second buffer layer of the light-emitting area has the lowest energy gap of B and the maximum In content of B; the third buffer layer In the light emitting region is arranged on or In the second buffer layer In the light emitting region, the lowest energy gap is C, and the maximum In content is C; the lowest energy gap of the luminescent layer is D, and the maximum In content is D; a, B, C, D, C, B and A, three light-emitting zone buffer layers are arranged between the N-type semiconductor layer and the light-emitting layer, and the height of the band gap energy level is adjusted to improve the light-emitting efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode and an epitaxial structure thereof.
Background
A Light Emitting Diode (LED) is a commonly used Light Emitting device, which emits Light by releasing energy through recombination of electrons and holes, and is widely used in various fields requiring Light sources. Current LED epitaxial wafers generally comprise: the light emitting diode comprises a substrate, a buffer layer grown on the substrate, an N-type layer grown on the buffer layer, a light emitting layer grown on the N-type layer, an electron blocking layer grown on the light emitting layer and a P-type layer grown on the electron blocking layer, wherein the N-type layer is made of GaN or Si-doped GaN generally, and the light emitting layer is made of InGaN generally. However, in the LED epitaxial wafer, since the lattice constant of the light emitting layer material is different from the lattice constant of the N-type layer material, there is lattice constant mismatch, which causes many defects in the light emitting layer, such as dislocation and offset, and a part of generated carriers will undergo non-radiative recombination, so that the recombination efficiency of electrons and holes is not high, and the light emitting efficiency is about 50% -80%.
Disclosure of Invention
In view of the above, the present invention provides a light emitting diode and an epitaxial structure thereof to improve light emitting efficiency.
In a first aspect, an embodiment of the present invention provides a light emitting diode epitaxial structure, including at least:
a substrate, and a buffer layer, an N-type semiconductor layer, a light-emitting region buffer layer, a light-emitting layer, an electron blocking layer and a P-type layer which are sequentially arranged on the substrate,
the light emitting region buffer layer comprises a light emitting region first buffer layer, wherein the light emitting region first buffer layer is arranged on the N-type semiconductor layer, the lowest energy gap of the light emitting region first buffer layer is a, and the maximum In content of the light emitting region first buffer layer is A;
the second buffer layer of the luminous zone is arranged on the first buffer layer of the luminous zone, and the second buffer layer of the luminous zone has the lowest energy gap of B and the maximum In content of B;
the third buffer layer In the light emitting region is arranged on or In the second buffer layer In the light emitting region, and the third buffer layer In the light emitting region has the lowest energy gap of C and the maximum In content of C;
the lowest energy gap of the light-emitting layer is D, and the maximum In content is D; wherein the content of the first and second substances,
a>b>c>d、D＞C＞B＞A。
optionally, the ratio of the In content B In the light emitting region second buffer layer to the In content a In the light emitting region first buffer layer is greater than or equal to 1.2 and less than or equal to 8; the ratio may be 2, 4, 6, 7.
Optionally, the In concentration In the light emitting region second buffer layer is: 0.5X 10 20 atoms/cm 3 ～5×10 20 atoms/cm 3 。
The light emitting region first buffer layer includes: al (Al) x2 In A2 Ga (1-A2-x2) N first barrier sublayer and Al x1 In A1 Ga (1-A1-x1) N first well sublayer, wherein A1 is more than 0 and less than 0.3, A2 is more than or equal to 0 and less than or equal to 0 and 1, x1 is more than or equal to 0 and less than 1, and x2 is more than or equal to 0 and less than or equal to 1;
the In concentration In the first well sublayer is 1 × 10 19 atoms/cm 3 ～2×10 20 atoms/cm 3 。
Optionally, the light emitting region second buffer layer includes: al (Al) y2 In B2 Ga (1-B2-y2) N second barrier sublayer and Al y1 In B1 Ga (1-B1-y1) N second well sub-layer, wherein B2 is more than 0.1 and less than B1 and less than 0.4, y1 is more than or equal to 0 and less than 1, y2 is more than or equal to 0 and less than 1, A2 is more than B2 and less than B1, and A1 is more than or equal to B2;
or A2 < A1 < B2 < B1.
Optionally, the light emitting region third buffer layer includes: al (Al) z1 In C1 Ga (1-C1-z1) N third well sublayer and Al z2 In C2 Ga (1-C2-z2) N third barrier sub-layers, wherein C1 is more than 0.1 and less than 0.4, B is more than C1, z1 is more than or equal to 0 and less than 0.1, C2 is more than 0 and less than 0.4, z2 is more than or equal to 0 and less than 0.1, C2 is more than or equal to B2, and C1 is more than B1.
Optionally, the light emitting region second buffer layer is a periodic structure formed by stacking a second barrier sublayer and a second well sublayer, and the light emitting region third buffer layer is a periodic structure formed by stacking a third barrier sublayer and a third well sublayer; the sum of the number of cycles of the third buffer layer in the light emitting area and the number of cycles of the second buffer layer in the light emitting area is 5-10;
the number of cycles of the second buffer layer in the light-emitting area is greater than or equal to that of the third buffer layer in the light-emitting area;
or the number of cycles of the second buffer layer in the light emitting region is less than that of the third buffer layer in the light emitting region.
Optionally, the light emitting layer comprises: al (Al) m1 In D1 Ga (1-D1-m1) N fourth well sublayer and Al m2 In D2 Ga (1-D2-m2) N fourth barrier sublayers, wherein D1 is more than 0 and less than or equal to 0.4, D2 is more than or equal to 0 and less than or equal to 0.3, m1 is more than or equal to 0 and less than or equal to 0.3, m2 is more than 0 and less than or equal to 0.1, D1 is more than C1, B1 is more than C2 and more than D2,
or D1 > C1 > B1 > D2 > C2 > A1.
Optionally, the concentration difference between the maximum concentration of the In content C1 In the third well sub-layer and the minimum concentration of the In content B1 In the second well sub-layer is: 0.2X 10 20 atoms/cm 3 ～1.5×10 20 atoms/cm 3 。
Optionally, the concentration difference between the maximum concentration of the In content C1 In the third well sub-layer and the minimum concentration of the In content a1 In the first well sub-layer is: 1X 10 20 atoms/cm 3 ～3×10 20 atoms/cm 3 。
Optionally, a distance between the last first well sub-layer of the light emitting region first buffer layer and the first second well sub-layer of the light emitting region second buffer layer is greater than or equal to
Optionally, the thickness of the first buffer layer in the light emitting region is
The thickness of the second buffer layer in the luminous zone is
The thickness of the third buffer layer in the luminous zone is
The thickness of the luminescent layer is
The light emitting diode epitaxial structure and the light emitting diode provided by the embodiment of the invention at least comprise: the light emitting region buffer layer comprises a light emitting region first buffer layer arranged on the N-type semiconductor layer, and the light emitting region first buffer layer has the lowest energy gap of a and the maximum In content of A; the second buffer layer of the luminous zone is arranged on the first buffer layer of the luminous zone, and the second buffer layer of the luminous zone has the lowest energy gap of B and the maximum In content of B; the third buffer layer In the light emitting region is arranged on or In the second buffer layer In the light emitting region, and the third buffer layer In the light emitting region has the lowest energy gap of C and the maximum In content of C; the lowest energy gap of the light-emitting layer is D, and the maximum In content is D; wherein a > B > C > D, D > C > B > A. Like this, through set up first buffer layer of luminous zone, luminous zone second buffer layer and luminous zone third buffer layer between N type layer and luminescent layer, form the gradual energy gap structure of energy gap gradient, can cushion the stress mismatch phenomenon between luminescent layer and the N type layer to reduce the nonradiative recombination phenomenon of light because the stress mismatch arouses, promoted LED epitaxial wafer's luminous efficacy.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of an epitaxial structure of a light emitting diode according to a first embodiment of the invention;
FIG. 2 is a schematic diagram of a partial bandgap structure according to a first embodiment of the present invention;
fig. 3 and 4 show the concentration and ion intensity of some elements in a led chip according to a first embodiment of the present invention;
FIGS. 5 and 6 show the concentration and ion intensity of some elements in a LED chip according to a second embodiment of the present invention;
FIG. 7 shows the concentration and ion intensity of some elements in an LED chip according to a third embodiment of the present invention;
fig. 8 is a schematic diagram illustrating a band gap structure of a portion of an epitaxial structure of a light emitting diode according to a fourth embodiment of the present invention;
fig. 9 shows a schematic diagram of a light emitting diode structure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a light emitting diode and an epitaxial structure thereof, which are described by the embodiment below.
Example one
The epitaxial wafer as shown in fig. 1-2 comprises a substrate 11, wherein the substrate 11 includes but is not limited to a sapphire substrate, a silicon carbide substrate, a silicon substrate or a gallium nitride substrate, and the substrate 10 is preferably a sapphire substrate; and a buffer layer 12, an N-type semiconductor layer 13, a light emitting region buffer layer 14, a light emitting layer 15, an electron blocking layer 16, and a P-type semiconductor layer 17 sequentially disposed on the substrate 11.
The buffer layer 12 comprises an undoped GaN layer; the N-type semiconductor layer 13 is a Si-doped GaN-based semiconductor layer, and the P-type semiconductor layer 17 is a Mg-doped GaN-based semiconductor layer. And the electron blocking layer disposed between the light emitting layer 15 and the P-type semiconductor layer is an AlGaN-based semiconductor layer doped with Mg.
The light emitting region buffer layer 14 is disposed between the N-type semiconductor layer and the light emitting layer 15, and includes:
an emitting region first buffer layer 141 disposed on the N-type semiconductor layer 13, the emitting region first buffer layer 141 being a nitride layer containing In an amount a, and having a lowest energy gap a;
an emission region second buffer layer 142 disposed on the emission region first buffer layer 141, the emission region second buffer layer 142 being a nitride layer containing B In, and having a lowest energy gap of B;
a light emitting region third buffer layer 143 disposed on the light emitting region second buffer layer 142, the light emitting region third buffer layer 143 being a nitride layer containing In an amount of C, a lowest energy gap of which is C;
wherein a > B > C > D, D > C > B > A; the ratio of the In content B In the light emitting region second buffer layer 142 to the In content a In the light emitting region first buffer layer 141 is greater than or equal to 1.2 and less than or equal to 8;
fig. 2 is a schematic diagram illustrating a lowest energy gap according to a first embodiment of the present invention. Ec is conduction band bottom energy, Ev is valence band top energy, Eg is the lowest energy gap, Eg ═ Ec-Ev.
The structures of the light emitting region buffer layer and the light emitting layer 15 are specifically described as follows:
the first buffer layer 141 of the light emitting region includes Al x2 In A2 Ga (1-A2-x2) N first barrier sublayer 14121412 and Al x1 In A1 Ga (1-A1-x1) N first well sublayer 14111411, wherein 0 & lt A1 & lt 0.3,0 & lt A2 & lt A1, 0 & lt x1 & lt 1, 0 & lt x2 & lt 1, namely, the In content In the first well sublayer 1411 is greater than that In the first barrier sublayer 1412, namely, In and Al must be In the first well sublayer 1411; in and Al may not be contained In the first barrier sublayer 1412.
The light emitting region second buffer layer 142 is disposed on the light emitting region first buffer layer 141, and includes:Al y2 In B2 ga (1-B2-y2) N second barrier sublayer 14221422 and Al y1 In B1 Ga (1-B1-y1) N second well sublayer 14211421, wherein B2 is more than 0.1 and less than B1 and less than 0.4, y1 is more than or equal to 0 and less than 1, y2 is more than or equal to 0 and less than 1, A2 and B2 are more than or equal to A1 and less than B1; that is, the In content In the second well sublayer 1421 is greater than the In content In the second barrier sublayer 1422, In and not Al must be present In the second well sublayer 1421; in and Al may not be contained In the first barrier sublayer 1412. Meanwhile, the In content In the second well sub-layer 1421 is greater than that In the first well sub-layer 1411, but the In content In the first well sub-layer 1411 is not necessarily less than that In the second barrier sub-layer 1422.
The light emitting region third buffer layer 143 is disposed on the light emitting region second buffer layer 142, and includes: al (Al) z1 In C1 Ga (1-C1-z1) N third well sublayer 14311431 and Al z2 In C2 Ga (1-C2-z2) N third barrier sublayers 14321432, wherein C1 is more than 0.1 and less than 0.4, z1 is more than or equal to 0 and less than 0.1, C2 is more than 0 and less than 0.4, z2 is more than or equal to 0 and less than 0.1, C2 is more than or equal to B2, and C1 is more than B1; that is, the concentration of In the third well sub-layer 1431 is greater than the concentration of In the second well sub-layer 1421, and the concentration of In the third barrier sub-layer 1432 is greater than or equal to the concentration of In the second barrier sub-layer 1422, but less than the concentration of In the first well sub-layer 1411.
Further, referring to fig. 3 and 4, the light emitting region first buffer layer 141 is a first barrier sub-layer 1412 and a first well alternately stacked structure, wherein the In concentration In the first well sub-layer 1411 is 2 × 1019atoms/cm 3-2 × 1020atoms/cm3, and the In concentration In the first barrier sub-layer 1412 is 1 × 1018atoms/cm 3-5 × 1018atoms/cm 3; preferably, the In concentration In the first well sublayer 1411 is 5 × 1019atoms/cm 3-9 × 1019atoms/cm 3;
the In concentration In the light emitting region second buffer layer 142 is: 1X 10 20 atoms/cm 3 ～5×10 20 atoms/cm 3 . Preferably 1X 10 20 atoms/cm 3 ～3×10 20 atoms/cm 3 。
The light emitting region second buffer layer 142 is a periodic structure formed by stacking a second barrier sublayer 1422 and a second well sublayer 1421, and the light emitting region third buffer layer 143 is a periodic structure formed by stacking a third barrier sublayer 1432 and a third well sublayer 1431; the sum of the number of cycles of the third buffer layer 143 in the light emitting region and the number of cycles of the second buffer layer 142 in the light emitting region is 5-10; the number of cycles of the light emitting region second buffer layer 142 is greater than or equal to the number of cycles of the light emitting region third buffer layer 143; alternatively, the number of cycles of the light emitting region second buffer layer 142 is less than that of the light emitting region third buffer layer 143; in this embodiment, the light emitting region second buffer layer 142 and the light emitting region third buffer layer 143 have the same cycle number, and are formed by alternately stacking barrier sub-layers and well sub-layers having 3 cycles.
In the light emitting region second buffer layer 142, the In content In the second well sub-layer 1421 is different In each period and increases In sequence according to the growth direction thereof.
With continued reference to fig. 3 and 4, the concentration difference between the maximum concentration of In content In third well sub-layer 1431 and the minimum concentration of In content B1 In second well sub-layer 1421 is: 0.2X 10 20 atoms/cm 3 ～1.5×10 20 atoms/cm 3 。
Optionally, the concentration difference between the maximum concentration of In content In the third well sub-layer 1431 and the minimum concentration of In content In the first well sub-layer 1411 is: 1X 10 20 atoms/cm 3 ～3×10 20 atoms/cm 3 。
The light emitting layer 15 disposed on the light emitting region third buffer layer 143 includes: al (Al) m1 In D1 Ga (1-D1-m1) N fourth well sublayer 151 and Al m2 In D2 Ga (1-D2-m2) The fourth N barrier sublayers 152, wherein D1 is more than 0 and less than or equal to 0.4, D2 is more than or equal to 0 and less than or equal to 0.3, m1 is more than or equal to 0 and less than or equal to 0.3, m2 is more than or equal to 0 and less than or equal to 0.1, D1 is more than C1 and more than B1 and more than C2 and more than B2, specifically, the light-emitting layer 15 is a periodic superlattice structure formed by alternately laminating the fourth well sublayers 151 and the fourth barrier sublayers 152, and the period number of the periodic superlattice structure is 6-20. The thickness of the fourth barrier sub-layer 152 in a single period is 4-12 nm, and the thickness of the fourth well sub-layer 151 in a single period is 2-4 nm.
Preferably, the concentration of In the fourth well sub-layer 151 is greater than that of In the light emitting region buffer layer, but the concentration of In the fourth barrier sub-layer 152 is not completely greater than the maximum concentration of In the light emitting region buffer layer. In this embodiment, the concentration of In the fourth barrier sublayer 152 is less than the concentrations of In the light emitting region second buffer layer 142 and the light emitting region third buffer layer 143.
A distance D between the last first well sub-layer 14111411 'of the light emitting region first buffer layer 141 and the first second well sub-layer 14211421' of the light emitting region second buffer layer 142 is greater than the sum of a distance between two adjacent first well sub-layers 1411 and a distance between two adjacent second well sub-layers 1421, where the distance L is:
the thickness of the first buffer layer 141 in the light emitting region is
The thickness of the light emitting region second buffer layer 142 is
The thickness of the light emitting region third buffer layer 143 is
The thickness of the light-emitting layer 15 is
Example two
As shown in fig. 5 and 6, the present embodiment is different from embodiment 1 in that: the light emitting region second buffer layer 142 has a cycle number of 2, that is, it includes 2 second well sublayers 1421 and 2 second barrier sublayers 1422, and a distance between the first second well sublayer 1421 and the last first well sublayer 1411 is greater than a distance between two adjacent first well sublayers 1411.
While the concentration of In the fourth barrier sublayer 152 In the light emitting layer 15 is greater than the concentration of In the third barrier sublayer 1432 In the light emitting region third buffer layer 143, and the concentration of In the first well sublayer 1411 In the light emitting region first buffer layer 141: 1X 10 20 atoms/cm 3 ～2×10 20 。
The light emitting layer 15 is of a periodic superlattice structure, the period number of the light emitting layer is 8-12, and the In concentration of the fourth well sub-layer 151 In the plurality of periods 15b close to the P-type semiconductor layer is smaller than that of the fourth well sub-layer 151 In the plurality of periods 15a close to the N-type semiconductor layer; specifically, the In concentration of the plurality of fourth well sublayers 151 adjacent to the P-type semiconductor layer gradually decreases as the distance of the specific P-type semiconductor layer decreases; the In concentration of the fourth well sub-layer 151 In the plurality of periods 15a near the N-type semiconductor layer is substantially the same or has a small amplitude fluctuation.
EXAMPLE III
The present embodiment is different from the first and second embodiments in that, referring to fig. 7, the number of periods of the light emitting region second buffer layer 142 is 1, that is, it includes 1 second well sub-layer 1421 and 1 second barrier sub-layer 1422, and the distance between the first second well sub-layer 1421 and the last first well sub-layer 1411 is equal to the distance between two adjacent first well sub-layers 1411 or the distance between two adjacent second well sub-layers 1421.
And, the maximum concentration of In the light emitting region first buffer layer 141 is still lower than the minimum concentration of In the second barrier sublayer 1422; the In concentration In the first well sublayer 1411 is small by 3 × 10 19 atoms/cm 3 And the In concentration In the fourth well sublayer 151 is greater than 3 × 10 20 atoms/cm 3 。
Example four
The difference between this embodiment and the first to third embodiments is that the light emitting region second buffer layer 142 is located in the light emitting region third buffer layer 143, and the light emitting region second buffer layer 142 includes at least one third well sub-layer 1431, where the third well sub-layer 1431 is close to the light emitting layer 15.
Fig. 8 shows a schematic diagram of the lowest energy gap of the fourth embodiment of the present invention. As shown in fig. 7, the light emitting region third buffer layer 143 is positioned in the light emitting region second buffer layer 142.
The invention also provides a preparation method of the light-emitting diode epitaxial structure, which comprises the following steps: the epitaxial wafers of examples 1 to 4 were grown by MOCVD (metal organic chemical vapor deposition). The method is characterized in that high-purity H2 or high-purity N2 or mixed gas of high-purity H2 and high-purity N2 is used as carrier gas, high-purity NH3 is used as an N source, metal organic sources of trimethyl gallium (TMGa) and triethyl gallium are used as gallium (TEGa) sources, trimethyl indium (TMIn) is used as an indium source, azomethine (TMAl) is used as an aluminum source), an N-type dopant is silane (SiH4), a P-type dopant is magnesium dicocene (CP2Mg), a substrate is (0001) plane patterned sapphire, and the reaction pressure is 100 mbar-800 mbar. The method comprises the following steps:
step 501, transferring the substrate into a reaction chamber, and controlling the temperature of the reaction chamber to be 700-1400 ℃, the pressure to be 100 tor-300 tor and high-temperature processing of the sapphire substrate under pure hydrogen atmosphere;
step 502, cooling to 500-550 ℃, and growing a GaN buffer layer on the sapphire substrate;
step 503, after the growth of the buffer layer is finished, controlling the temperature of the reaction chamber at 1000-1400 ℃ and the pressure of 100 tor-300 tor, growing a Si-doped N-type GaN semiconductor layer,
step 504, after the growth of the N-type GaN semiconductor layer is finished, controlling the temperature of the reaction chamber to be 600-1100 ℃ and the pressure to be 100-300 tor, and growing a first buffer layer 141 of a light emitting region with the lowest energy gap of a and the maximum In content of A;
in the embodiment of the present invention, the light emitting region first buffer layer 141 may have a single-layer or multi-layer structure, and may include a superlattice structure, the material is GaN, and the material contains a dopant that is any combination of Al, In, and Si.
Step 505, after the growth of the first buffer layer 141 In the light emitting region is finished, controlling the temperature of the reaction chamber at 600C-1000C and the pressure at 100 tor-250 tor, and growing the second buffer layer 142 In the light emitting region with the lowest energy gap of B and the maximum In content of B, and the third buffer layer 143 In the light emitting region with the lowest energy gap of C and the maximum In content of C;
step 506, controlling the temperature of the reaction chamber to 700-1000 ℃ and the pressure to 100 tor-250 tor, and growing a light-emitting layer 15 with the lowest energy gap D and the maximum In content D, wherein a > B > C > D, D/A-3-6, D/B-1-3, D/C-1.5-2.5 and C > B;
in the embodiment of the present invention, the light emitting layer 15 is a periodic quantum well structure having a superlattice composed of a barrier and a well sublayer, and the period number of the periodic quantum well structure may be one or more layers, wherein the superlattice may be doped with Al and/or Si dopants for adjusting performance.
Step 507, controlling the temperature of the reaction chamber to be 600-900 ℃ and the pressure to be 100 tor-200 tor, and growing an electron blocking layer;
step 508, controlling the temperature of the reaction chamber at 900-1100 ℃ and the pressure of 150 tor-250 tor, and growing a Mg-doped P-type GaN semiconductor layer;
and 509, reducing the temperature to 700-750 ℃, and activating the P-type GaN in a nitrogen atmosphere for 20-30 minutes.
In the embodiment of the invention, after the growth of the P-type semiconductor layer is finished, the growth process of the whole LED epitaxial wafer is finished.
As shown in fig. 9, the present invention further provides a light emitting diode, which includes the epitaxial structure of any one of the first to fourth embodiments, and further includes: a current blocking layer 18 disposed on the P-type layer 17, a transparent conductive layer 19 disposed on the P-type layer 17 and the current blocking layer 18, a P-electrode 101 disposed on the transparent conductive layer 19, and an N-electrode 102 disposed on the N-type layer 13. The P electrode and the N electrode are respectively electrically connected with an external positive electrode and an external negative electrode and emit light with a certain wavelength when electrified. The light-emitting diode mainly emits blue light and green light, and the wavelength range of the light-emitting diode is 400-600 nm.
Table 1 is a performance schematic table of an LED wafer according to an embodiment of the present invention.
TABLE 1
As can be seen from table 1, for the LED epitaxial wafer structure including the Light-emitting region first buffer layer 141, the Light-emitting region second buffer layer 142 and the Light-emitting region third buffer layer 143 between the Light-emitting layer 15 and the N-type GaN semiconductor layer, when the B/a is 1.2 to 8, the luminance (low, Light Output Power), Forward Voltage drop (VFL), and electrostatic Discharge (ESD) are optimal, and the wafer larger or smaller than the parameter range has different losses in the main parameters such as the luminance (low, Light Output Power), the Forward Voltage drop (VFL), and the electrostatic Discharge (ESD).
The invention arranges the first buffer layer, the second buffer layer and the third buffer layer between the N-type semiconductor layer and the luminous layer, the energy gap of the third buffer layer is between the energy gap of the luminous layer and the second buffer layer, and is close to the energy gap of the luminous layer and the second buffer layer, the energy gap of the second buffer layer is between the energy gap of the first buffer layer and the energy gap of the second buffer layer, and is close to the energy gap of the first buffer layer and the energy gap of the second buffer layer, the energy gap of the first buffer layer is between the energy gap of the second buffer layer and the energy gap of the N-type layer, and is close to the energy gap of the second buffer layer and the energy gap of the N-type layer, thus, a graded energy gap structure can be formed, the phenomenon of stress mismatch between the luminous layer and the N-type layer can be well buffered, dislocation generated by lattice constant mismatching between growing materials in the growing process of the LED wafer is reduced, the growing quality of a quantum hydrazine light-emitting layer is improved, and the number of defects in the light-emitting layer is effectively reduced, so that the non-radiative recombination phenomenon of light is reduced, and the light-emitting efficiency of the LED epitaxial wafer is improved; meanwhile, the stress mismatch phenomenon between the light emitting layer and the N-type layer is effectively improved, so that the antistatic capability of the LED epitaxial wafer can be effectively improved.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus once an item is defined in one figure, it need not be further defined and explained in subsequent figures, and moreover, the terms "first", "second", "third", etc. are used merely to distinguish one description from another and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present application, and are used for illustrating the technical solutions of the present application, but not limiting the same, and the scope of the present application is not limited thereto, and although the present application is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope disclosed in the present application; such modifications, changes or substitutions do not depart from the spirit and scope of the present disclosure, which should be construed in light of the above teachings. Are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (12)
1. A light emitting diode epitaxial structure comprising at least:
a substrate, and a buffer layer, an N-type semiconductor layer, a light-emitting region buffer layer, a light-emitting layer, an electron blocking layer and a P-type layer which are sequentially arranged on the substrate,
the light emitting region buffer layer comprises a light emitting region first buffer layer which is arranged on the N-type semiconductor layer and is a nitride layer with the In content of A;
the second buffer layer of the luminous zone is arranged on the first buffer layer of the luminous zone and is a nitride layer with the In content of B;
the third buffer layer In the light-emitting region is arranged on or In the second buffer layer In the light-emitting region and is a nitride layer with the In content of C;
the light emitting layer is arranged on the light emitting region buffer layer and is a nitride layer with the In content being D; wherein D > C > B > A.
2. The light-emitting diode epitaxial structure according to claim 1, wherein the ratio of the In content B In the light-emitting region second buffer layer to the In content a In the light-emitting region first buffer layer is greater than or equal to 1.2 and less than or equal to 8;
preferably, the light emitting region isThe In concentration In the second buffer layer is as follows: 0.5X 10 20 atoms/cm 3 ～5×10 20 atoms/cm 3 。
3. The light emitting diode epitaxial structure of claim 1, wherein the light emitting region first buffer layer comprises: al (Al) x2 In A2 Ga (1-A2-x2) N first barrier sublayer and Al x1 In A1 Ga (1-A1-x1) N first well sublayer, wherein A1 is more than 0 and less than 0.3, A2 is more than or equal to 0 and less than or equal to 0 and 1, x1 is more than or equal to 0 and less than 1, and x2 is more than or equal to 0 and less than or equal to 1;
preferably, the In concentration In the first well sublayer is 1 × 10 19 atoms/cm 3 ～2×10 20 atoms/cm 3 。
4. The light emitting diode epitaxy structure of claim 3, wherein the light emitting region second buffer layer comprises: al (Al) y2 In B2 Ga (1-B2-y2) N second barrier sublayer and Al y1 In B1 Ga (1-B1-y1) N second well sub-layer, wherein B2 is more than 0.1 and less than B1 and less than 0.4, y1 is more than or equal to 0 and less than 1, y2 is more than or equal to 0 and less than 1, A2 is more than B2 and less than B1, and A1 is more than or equal to B2;
or A2 < A1 < B2 < B1.
5. The light emitting diode epitaxy structure of claim 4, wherein the light emitting region third buffer layer comprises: al (Al) z1 In C1 Ga (1-C1-z1) N third well sublayer and Al z2 In C2 Ga (1-C2-z2) N third barrier sub-layers, wherein C1 is more than 0.1 and less than 0.4, B is more than C1, z1 is more than or equal to 0 and less than 0.1, C2 is more than 0 and less than 0.4, z2 is more than or equal to 0 and less than 0.1, C2 is more than or equal to B2, and C1 is more than B1.
6. The light emitting diode epitaxial structure of claim 5, wherein the light emitting region second buffer layer is a periodic structure formed by stacking a second barrier sublayer and a second well sublayer, and the light emitting region third buffer layer is a periodic structure formed by stacking a third barrier sublayer and a third well sublayer; the sum of the number of cycles of the third buffer layer in the light emitting area and the number of cycles of the second buffer layer in the light emitting area is 5-10;
the number of cycles of the second buffer layer in the light emitting area is more than or equal to that of the third buffer layer in the light emitting area;
or the number of cycles of the second buffer layer in the light emitting region is less than that of the third buffer layer in the light emitting region.
7. The light emitting diode epitaxial structure of claim 5, wherein the light emitting layer comprises: al (Al) m1 In D1 Ga (1-D1-m1) N fourth well sublayer and Al m2 In D2 Ga (1-D2-m2) N fourth barrier sublayers, wherein D1 is more than 0 and less than or equal to 0.4, D2 is more than or equal to 0 and less than or equal to 0.3, m1 is more than or equal to 0 and less than or equal to 0.3, m2 is more than 0 and less than or equal to 0.1, D1 is more than C1, B1, C2 and D2,
or D1 > C1 > B1 > D2 > C2 > A1.
8. The light-emitting diode epitaxial structure according to claim 5, wherein the concentration difference between the maximum concentration of In content C1 In the third well sub-layer and the minimum concentration of In content B1 In the second well sub-layer is: 0.2X 10 20 atoms/cm 3 ～1.5×10 20 atoms/cm 3 。
9. The light-emitting diode epitaxial structure of claim 5, wherein the concentration difference between the maximum concentration of the In content C1 In the third well sub-layer and the minimum concentration of the In content A1 In the first well sub-layer is: 1X 10 20 atoms/cm 3 ～3×10 20 atoms/cm 3 。
10. The light emitting diode epitaxial structure of claim 5, wherein: the distance between the last first well sub-layer of the first buffer layer of the light emitting area and the first second well sub-layer of the second buffer layer of the light emitting area is larger than or equal to
11. The LED package of claim 1The light-emitting region has a first buffer layer with a thickness of
The thickness of the second buffer layer in the luminous zone is
The thickness of the third buffer layer in the luminous zone is
The thickness of the luminescent layer is
12. A light emitting diode comprising the light emitting diode epitaxial structure according to any one of claims 1 to 11.
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| WO2024002094A1 (en) * | 2022-06-27 | 2024-01-04 | 淮安澳洋顺昌光电技术有限公司 | Light-emitting diode and epitaxial structure thereof |
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