CN110911529A - Growth method of epitaxial structure of light-emitting diode - Google Patents
Growth method of epitaxial structure of light-emitting diode Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention provides a method for growing an epitaxial structure of a light-emitting diode, which comprises the following steps: growing a first semiconductor layer on a substrate; growing an N-type semiconductor layer on the first semiconductor layer; growing a first multi-quantum well structure on the N-type semiconductor layer; growing a second multi-quantum well structure on the first multi-quantum well structure, wherein the second multi-quantum well structure at least comprises: at least two multiple quantum wells and multiple quantum barriers, wherein the multiple quantum barriers comprise: a first nitride containing aluminum and gallium, and a second nitride containing aluminum, and the first nitride and the second nitride are alternately grown; growing a second P-type semiconductor layer on the second multi-quantum well structure; growing the electron blocking layer on the second P-type semiconductor layer; and growing a third P-type semiconductor layer on the electron blocking layer.
Description
Technical Field
The invention relates to the technical field of epitaxial structures of light emitting diodes, in particular to a growth method of an epitaxial structure of a light emitting diode.
Background
A Light Emitting Diode (LED) is a semiconductor solid Light Emitting device that directly converts electricity into Light using a semiconductor PN junction as a Light Emitting material.
The ultraviolet LED, referred to as UV-LED for short, has the advantages of small size, long service life, environmental protection, low-voltage power supply and the like, and becomes a better choice for replacing mercury lamps as a new generation of ultraviolet light source. Although ultraviolet LEDs have many excellent characteristics, the luminous efficiency and overall performance of ultraviolet LEDs are lower than those of blue LEDs, especially UV-LEDs with wavelength below 370nm, and the luminous intensity of the devices is still very low, which limits the speed of commercial applications.
For the epitaxial growth and the structural design of the LED, it is important to improve the internal quantum efficiency iqe (internal quantum efficiency) of the epitaxial wafer, and there are two methods for improving the internal quantum efficiency, which are to improve the injection efficiency of the carriers and the recombination efficiency of the carriers. In the process of injecting electrons and holes in a general LED into an active region MQW from an N, P region respectively, due to the fact that the electron migration rate is high, the problem that electrons overflow from the MQW generally exists, and therefore injection efficiency and reactivation efficiency of carriers are low. For the purple light LED epitaxy, because the potential barrier difference between a quantum well and a quantum barrier is small, the limiting capacity of the potential barrier on a carrier is weak, and therefore in order to improve the injection efficiency of the carrier and reduce the overflow of the carrier from an active region, the invention designs the stepped potential barrier epitaxy structure, the stepped potential barrier epitaxy structure can effectively prevent the overflow of electrons, can prevent Mg atoms in a P layer from diffusing to the active region in the reverse direction, protects the crystal quality of the active region from being damaged, and improves the injection efficiency and the recombination efficiency of the carrier.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a method for growing an epitaxial structure of a light emitting diode, which is used to solve the problem of the light emitting efficiency of the light emitting diode in the prior art being reduced.
To achieve the above and other related objects, the present invention provides a method for growing an epitaxial structure of a light emitting diode, the method comprising the steps of:
growing a first semiconductor layer on a substrate;
growing an N-type semiconductor layer on the first semiconductor layer;
growing a first multi-quantum well structure on the N-type semiconductor layer;
growing a second multi-quantum well structure on the first multi-quantum well structure, wherein the second multi-quantum well structure at least comprises: at least two multiple quantum wells and multiple quantum barriers, wherein the multiple quantum barriers comprise: a first nitride containing aluminum and gallium, and a second nitride containing aluminum, and the first nitride and the second nitride are alternately grown;
growing a second P-type semiconductor layer on the second multi-quantum well structure;
growing the electron blocking layer on the second P-type semiconductor layer;
and growing a third P-type semiconductor layer on the electron blocking layer.
In one implementation of the present invention, the step of growing the second multiple quantum well structure on the first multiple quantum well structure includes:
and circularly growing the multiple quantum wells and the multiple quantum barriers in the direction far away from the first multiple quantum well structure, wherein the growth temperature is 750-.
In one implementation manner of the present invention, the growth temperature of the first nitride and the second nitride is between 800-1000 ℃, the pressure is between 200-500Torr, the aluminum content in the first nitride gradually decreases during one growth process, the one growth thickness of the first nitride and the second nitride is between 8-20nm, and the thickness ratio of the second nitride and the first nitride is 1: 10.
In one implementation of the invention, the number of growth cycles of the first nitride and the second nitride is between 6 and 12.
In one implementation manner of the present invention, the step of growing the first semiconductor layer on the substrate includes:
on the aluminum-containing nitride substrate, the temperature is adjusted to 1000-.
In one implementation manner of the present invention, the step of growing an N-type semiconductor layer on the first semiconductor layer includes:
growing an N-type gallium nitride GaN layer with stable doping concentration on the first semiconductor layer, wherein the doping concentration range of the gallium nitride is 1 x 1018-5*1019cm-3Wherein the growth temperature is 1000-1200 ℃, the growth pressure is 100-600Torr, and the thickness is 1.5-4.5 um.
In one implementation manner of the present invention, the step of growing the first multiple quantum well structure on the N-type semiconductor layer includes:
and growing a first multi-quantum well structure on the N-type semiconductor layer, wherein the growth temperature is 600-1000 ℃, the growth pressure is 400-600Torr, the first multi-quantum well is composed of 1-20 layers of nitride containing indium and gallium and/or nitride multi-quantum wells containing aluminum and gallium, the thickness of a single multi-quantum well is 0.5-8nm, and the thickness of a multi-quantum barrier is 5-20 nm.
In one implementation of the present invention, the step of growing the second P-type semiconductor layer on the second multiple quantum well structure includes:
and growing a low-temperature P-type GaN layer with the thickness of 10-100nm on the second multi-quantum well structure, wherein the growth temperature is between 620-820 ℃, the growth time is 5-35min, and the pressure is between 100-500 Torr.
In one implementation manner of the present invention, the step of growing the electron blocking layer on the second P-type semiconductor layer includes:
and growing the electron blocking layer on the second P-type semiconductor layer, wherein the thickness of the grown electron blocking layer is 10-50nm, the growth temperature is 900-1100 ℃, the growth time is 5-15min, the pressure is 50-500Torr, and the molar component content of Al in the P-type AlGaN layer is controlled to be 10% -30%.
In one implementation manner of the present invention, the step of growing a third P-type semiconductor layer on the electron blocking layer includes:
and growing a p-type GaN layer with the thickness of 30-100nm on the electron blocking layer by taking nitrogen as a carrier gas, wherein the growth temperature is 700-1100 ℃, the growth time is 5-30min, the pressure is 200-600Torr, and the growth thickness is 50-200 nm.
In an implementation manner of the present invention, the method further includes:
and adjusting the temperature of the growth environment of the epitaxial structure to between 450 and 800 ℃, annealing for 2-20 min in a pure nitrogen atmosphere, and then cooling to room temperature to obtain the LED epitaxial structure.
As described above, the method for growing the epitaxial structure of the light emitting diode of the present invention has the following beneficial effects:
(1) the barrier growth structure adopted in the second multiple quantum well can prevent Mg atoms in the low-temperature P-type GaN from downwards permeating into the quantum well, so that the crystal quality of the quantum well is improved;
(2) through the quantum barrier structure adopted in the second multiple quantum well, when large current is injected, the quantum barrier layer structure adopted by the invention can enhance the barrier height, prevent electrons from overflowing and improve the carrier recombination efficiency;
(3) by adopting the quantum barrier structure in the second multi-quantum well structure, the AlN and AlGaN double-layer structure is adopted for growth, which is beneficial to matching the stress state of the quantum well InGaN; in InGaN, because In atoms are larger than GaN atoms, the material can have tensile stress, Al is doped In a quantum barrier to form AlGaN, and because Al atoms are smaller than GaN atoms, compressive stress is formed In the quantum barrier; therefore, through stress balance, the stress in the quantum well can be better balanced, the polarization effect is reduced, the recombination probability of holes and carriers is improved, and the luminous brightness is improved.
Drawings
Fig. 1 is a schematic flow chart illustrating a method for growing an epitaxial structure of a light emitting diode according to the present invention.
Fig. 2 is a schematic structural diagram of an epitaxial structure of a light emitting diode according to the present invention.
FIG. 3 is a schematic diagram illustrating an effect of a method for growing an epitaxial structure of a light emitting diode;
FIG. 4 is a schematic diagram of another effect of the method for growing the epitaxial structure of the light emitting diode;
fig. 5 is a schematic diagram illustrating still another effect of the method for growing the epitaxial structure of the light emitting diode.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1 to 5. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
As shown in fig. 1, the present invention provides a method for growing an epitaxial structure of a light emitting diode, the method comprising the steps of:
s101, growing a first semiconductor layer on the substrate.
And S102, growing an N-type semiconductor layer on the first semiconductor layer.
And S103, growing a first multi-quantum well structure on the N-type semiconductor layer.
And S104, growing a second multi-quantum well structure on the first multi-quantum well structure.
Wherein the second multi-quantum well structure comprises at least: at least two multiple quantum wells and multiple quantum barriers, wherein the multiple quantum barriers comprise: a first nitride containing aluminum and gallium, and a second nitride containing aluminum, and the first nitride and the second nitride are alternately grown.
And S105, growing a second P-type semiconductor layer on the second multi-quantum well structure.
And S106, growing the electron blocking layer on the second P-type semiconductor layer.
And S107, growing a third P-type semiconductor layer on the electron blocking layer.
In one implementation of the present invention, the step of growing the second multiple quantum well structure on the first multiple quantum well structure includes:
and circularly growing the multiple quantum wells and the multiple quantum barriers in the direction far away from the first multiple quantum well structure, wherein the growth temperature is 750-.
In one implementation manner of the present invention, the growth temperature of the first nitride and the second nitride is between 800-1000 ℃, the pressure is between 200-500Torr, the aluminum content in the first nitride gradually decreases during one growth process, the one growth thickness of the first nitride and the second nitride is between 8-20nm, and the thickness ratio of the second nitride and the first nitride is 1: 10.
In one implementation of the invention, the number of growth cycles of the first nitride and the second nitride is between 6 and 12.
In a specific first embodiment, the second nitride ALN and the first nitride AlyGa1-yN alternate Loop growth, AlyGa1-yIntroducing Al in the N into the N by a gradient mode from more to less Ramp to 0.02, wherein the number of cyclic loops is 6, the total thickness of the ALN and the AlGaN in each period is between 8, the temperature is between 800 ℃, the pressure is between 200Torr, and the thickness ratio of the ALN to the AlGaN is kept constant at 1: 10.
In a second embodiment, the second nitride ALN and the first nitride AlyGa1-yN alternate Loop growth, AlyGa1-yIntroducing Al in N into the reactor by a gradient mode from more to less Ramp to 0.08, wherein the number of cyclic loops is 8, the total thickness of ALN and AlGaN is between 10nm, the temperature is between 850 ℃ and the pressure is between 300Torr in each period, and the thickness ratio of ALN to AlGaN is 1:10 remain unchanged.
In a third embodiment, theDinitrogen compound ALN and first nitride AlyGa1-yN alternate Loop growth, AlyGa1-yIntroducing Al in the N into the reactor by a gradient mode from more to less Ramp to 0.1, wherein the number of cyclic loops is 10 periods, the total thickness of the ALN and the AlGaN in each period is between 12nm, the temperature is between 900 ℃, the pressure is between 450Torr, and the thickness ratio of the ALN to the AlGaN is kept constant at 1: 10.
In the fourth embodiment, the second nitride ALN and the first nitride AlyGa1-yN alternate Loop growth, AlyGa1-yIntroducing Al in the N into the aluminum alloy by a gradient mode from more to less Ramp to 0.2, wherein the number of cyclic loops is 12, the total thickness of the ALN and the AlGaN in each period is between 20nm, the temperature is between 1000 ℃, the pressure is between 500Torr, and the thickness ratio of the ALN to the AlGaN is kept constant at 1: 10.
In one implementation manner of the present invention, the step of growing the first semiconductor layer on the substrate includes:
on the aluminum-containing nitride substrate, the temperature is adjusted to 1000-.
In one implementation manner of the present invention, the step of growing an N-type semiconductor layer on the first semiconductor layer includes:
growing an N-type gallium nitride GaN layer with stable doping concentration on the first semiconductor layer, wherein the doping concentration range of the gallium nitride is 1 x 1018-5*1019cm-3Wherein the growth temperature is 1000-1200 ℃, the growth pressure is 100-600Torr, the thickness is 1.5-4.5um, and the V/III molar ratio is 50-2000.
In one implementation manner of the present invention, the step of growing the first multiple quantum well structure on the N-type semiconductor layer includes:
and growing a first multi-quantum well structure on the N-type semiconductor layer, wherein the growth temperature is 600-1000 ℃, the growth pressure is 400-600Torr, the V/III molar ratio is 200-5000, the first multi-quantum well is composed of 1-20 layers of nitride containing indium and gallium and/or nitride multi-quantum wells containing aluminum and gallium, the thickness of a single multi-quantum well is 0.5-8nm, and the thickness of a multi-quantum barrier is 5-20 nm.
In one implementation of the present invention, the step of growing the second P-type semiconductor layer on the second multiple quantum well structure includes:
and growing a low-temperature P-type GaN layer with the thickness of 10-100nm on the second multi-quantum well structure, wherein the growth temperature is between 620-820 ℃, the growth time is 5-35min, the pressure is between 100-500Torr, and the V/III ratio is 300-5000.
In one implementation manner of the present invention, the step of growing the electron blocking layer on the second P-type semiconductor layer includes:
and growing the electron blocking layer on the second P-type semiconductor layer, wherein the growth thickness of the electron blocking layer is 10-50nm, the growth temperature is 900-1100 ℃, the growth time is 5-15min, the pressure is 50-500Torr, the V/III ratio is 1000-20000, and the molar component content of Al in the P-type AlGaN layer is controlled to be 10-30%.
In one implementation manner of the present invention, the step of growing a third P-type semiconductor layer on the electron blocking layer includes:
and growing a p-type GaN layer with the thickness of 30-100nm on the electron blocking layer by taking nitrogen as a carrier gas, wherein the growth temperature is 700-1100 ℃, the growth time is 5-30min, the pressure is 200-600Torr, the molar ratio of V/III is 200-6000, and the growth thickness is 50-200 nm.
And then, manufacturing a single small-size chip by subsequent processing technologies such as cleaning, deposition, photoetching, etching and the like.
This example uses high purity hydrogen (H2) or nitrogen (N2) as carrier gases, trimethyl gallium (TMGa), triethyl gallium (TEGa), trimethyl aluminum (TMAl), trimethyl indium (TMIn) and ammonia (NH3) as Ga, Al, In and N sources, respectively, and silane (SiH4) and magnesium dicocene (CP2Mg) as N, P dopants, respectively.
The growth method of the epitaxial structure of the light-emitting diode has the following beneficial effects:
(1) the second multi-quantum well structure can prevent Mg in the low-temperature P-type GaN from permeating into the quantum well, so that the crystal quality of the quantum well is improved;
(2) when large current is injected, the superlattice electron diffusion barrier layer can enhance the barrier height, and electrons are prevented from overflowing in the low-temperature P-type GaN and being non-radiatively compounded with holes;
(3) the second multi-quantum well structure adopts AlN and AlGaN superlattice growth, and as GaN and AlN have smaller lattice mismatch ratio, the AlN layer reduces lattice mismatch between the GaN and the AlGaN layer along with the insertion of AlN, improves the interface characteristic of AlGaN/GaN heterojunction, and is beneficial to weakening interface roughness scattering; therefore, the effective potential barrier of the electron barrier layer is enhanced, the injection efficiency of the holes is increased, and the light extraction of the quantum well is effectively improved, so that the luminous efficiency of the GaN-based light-emitting diode is improved.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
Based on the method, the epitaxial structure of the light emitting diode epitaxial structure is obtained, and as shown in fig. 2-5, the materials of the epitaxial structure from bottom to top are as follows in sequence: the semiconductor device comprises an aluminum-containing nitride substrate 1, a first semiconductor layer 2, an N-type semiconductor layer 3, a first multi-quantum well structure 4, a second multi-quantum well structure 5, a second P-type semiconductor layer 6, an electron blocking layer 7 and a third P-type semiconductor layer 8; wherein the second multiple quantum well structure 5 comprises at least: at least two multiple quantum wells 51 and multiple quantum barriers 52, said multiple quantum barriers 52 comprising: first nitride 521 containing aluminum and gallium, and second nitride 522 containing aluminum, and the second nitride 522 and the first nitride 521 are alternately grown.
And then, manufacturing a single small-size chip by subsequent processing technologies such as cleaning, deposition, photoetching, etching and the like. This example uses high purity hydrogen (H)2) Or nitrogen (N)2) As the carrier gas, trimethyl gallium (TMGa), triethyl gallium (TEGa), trimethyl aluminum (TMAl), trimethyl indium (TMIn), and ammonia gas (NH)3) Using Silane (SiH) as the source of Ga, Al, In and N, respectively4) And magnesium Dicyclopenta (CP)2Mg)Respectively, as N, P-type dopants.
In one implementation of the present invention, the multiple quantum wells 51 and the multiple quantum barriers 52 are alternately grown, and the number of alternately grown layers is at least two, and exemplarily, the number of alternately grown layers may be 4, that is, 2 layers of multiple quantum wells 51 and 2 layers of multiple quantum barriers 52 are alternately grown; may be 6 layers, that is, 3 layers of multiple quantum wells 51 and 3 layers of multiple quantum barriers 52 are alternately grown; the number of layers may be 8, that is, 4 multiple quantum wells 51 and 4 multiple quantum barriers 52 are alternately grown, and the specific number of layers is not specifically limited in the embodiment of the present invention.
Specifically, the multi-quantum barrier 52 includes: first nitride 521 containing aluminum and gallium, and second nitride 522 containing aluminum, and the second nitride 522 and the first nitride 521 are alternately grown. It is understood that, as the number of layers of the first nitride and the second nitride alternately grown increases, it takes time and cost to increase, so that the number of times of the alternate growth of the first nitride 521 and the second nitride 522 in the embodiment of the present invention is 6 to 12, as shown in fig. 3, 6 alternate growth effects, based on consideration of cost and growth effects.
In one implementation of the present invention, the multiple quantum well 51 is a third nitride In containing indium and galliumxGa1- xN, wherein x has a value of 0.02 to 0.5. And in one alternating growth, the aluminum content in the first nitride decreases from the position close to the multiple quantum well 51 to the position far away from the multiple quantum well 51, and the value of AlxGa (1-x) N, x in the first nitride is 0.02-2.
In one implementation, the growth temperature of the multiple quantum barrier 52 and the multiple quantum well 51 is between 750-920 ℃, the pressure is between 400-600Torr, the molar ratio of V/III is between 300-8000, and the multiple quantum well 51In is grownxGa1-XN quantum well with thickness of 0.5-5nm, and multiple quantum barrier 52 formed by ALN and AlyGa1-yN alternate Loop growth, AlyGa1-yIntroducing Al in N in a gradient mode from more to less Ramp (0.02)<y<0.2) and the number of cyclic Loop is 6-12 periods, and the total thickness of ALN and AlGaN in each period is 8-20nm, the temperature is 800-1000 ℃, and the pressure is 200-500Torr, wherein the ALN and AlGaN thickness ratio is kept constant at 1: 10.
As shown in FIG. 5, AlN and AlGaN are alternately grown in cycles with a cycle period of 6-12; wherein, the introduced source only represents the concentration and does not represent the absolute relation of the flow, and ON represents ON; OFF represents OFF.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A method for growing an epitaxial structure of a light-emitting diode (LED), the method comprising the steps of:
growing a first semiconductor layer on a substrate;
growing an N-type semiconductor layer on the first semiconductor layer;
growing a first multi-quantum well structure on the N-type semiconductor layer;
growing a second multi-quantum well structure on the first multi-quantum well structure, wherein the second multi-quantum well structure at least comprises: at least two multiple quantum wells and multiple quantum barriers, wherein the multiple quantum barriers comprise: a first nitride containing aluminum and gallium, and a second nitride containing aluminum, and the first nitride and the second nitride are alternately grown;
growing a second P-type semiconductor layer on the second multi-quantum well structure;
growing the electron blocking layer on the second P-type semiconductor layer;
and growing a third P-type semiconductor layer on the electron blocking layer.
2. The method according to claim 1, wherein the step of growing a second multiple quantum well structure on the first multiple quantum well structure comprises:
and circularly growing the multiple quantum wells and the multiple quantum barriers in the direction far away from the first multiple quantum well structure, wherein the growth temperature is 750-.
3. The method as claimed in claim 2, wherein the growth temperature of the first nitride and the second nitride is between 800-1000 ℃ and the pressure is between 200-500Torr, the Al content in the first nitride gradually decreases during one growth process, the thickness of the first nitride and the second nitride during one growth process is between 8-20nm, and the thickness ratio of the second nitride to the first nitride is 1: 10;
the number of growth cycles of the first nitride and the second nitride is 6-12.
4. The method of claim 1, wherein the step of growing the first semiconductor layer on the substrate comprises:
on the aluminum-containing nitride substrate, the temperature is adjusted to 1000-.
5. The method for growing the epitaxial structure of the light-emitting diode according to claim 1, wherein the step of growing the N-type semiconductor layer on the first semiconductor layer comprises:
growing an N-type gallium nitride GaN layer with stable doping concentration on the first semiconductor layer, wherein the doping concentration range of the gallium nitride is 1 x 1018-5*1019cm-3Wherein the growth temperature is 1000-1200 ℃, the growth pressure is 100-600Torr, and the thickness is 1.5-4.5 um.
6. The light emitting diode epitaxial structure growth method of claim 1, wherein the step of growing a first multiple quantum well structure on the N-type semiconductor layer comprises:
and growing a first multi-quantum well structure on the N-type semiconductor layer, wherein the growth temperature is 600-1000 ℃, the growth pressure is 400-600Torr, the first multi-quantum well is composed of 1-20 layers of nitride containing indium and gallium and/or nitride multi-quantum wells containing aluminum and gallium, the thickness of a single multi-quantum well is 0.5-8nm, and the thickness of a multi-quantum barrier is 5-20 nm.
7. The light emitting diode epitaxial structure growth method according to claim 1, wherein the step of growing a second P-type semiconductor layer on the second multiple quantum well structure comprises:
and growing a low-temperature P-type GaN layer with the thickness of 10-100nm on the second multi-quantum well structure, wherein the growth temperature is between 620-820 ℃, the growth time is 5-35min, and the pressure is between 100-500 Torr.
8. The method for growing the epitaxial structure of the light-emitting diode according to claim 1, wherein the step of growing the electron blocking layer on the second P-type semiconductor layer comprises:
and growing the electron blocking layer on the second P-type semiconductor layer, wherein the thickness of the grown electron blocking layer is 10-50nm, the growth temperature is 900-1100 ℃, the growth time is 5-15min, the pressure is 50-500Torr, and the molar component content of Al in the P-type AlGaN layer is controlled to be 10% -30%.
9. The method for growing the epitaxial structure of the light-emitting diode according to claim 1, wherein the step of growing the third P-type semiconductor layer on the electron blocking layer comprises:
and growing a p-type GaN layer with the thickness of 30-100nm on the electron blocking layer by taking nitrogen as a carrier gas, wherein the growth temperature is 700-1100 ℃, the growth time is 5-30min, the pressure is 200-600Torr, and the growth thickness is 50-200 nm.
10. The method of growing a light emitting diode epitaxial structure according to claim 1, further comprising:
and adjusting the temperature of the growth environment of the epitaxial structure to between 450 and 800 ℃, annealing for 2-20 min in a pure nitrogen atmosphere, and then cooling to room temperature to obtain the LED epitaxial structure.
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