CN115011943A - Switchable uniformity correcting plate group structure and vacuum coating machine thereof - Google Patents
Switchable uniformity correcting plate group structure and vacuum coating machine thereof Download PDFInfo
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- CN115011943A CN115011943A CN202210710733.9A CN202210710733A CN115011943A CN 115011943 A CN115011943 A CN 115011943A CN 202210710733 A CN202210710733 A CN 202210710733A CN 115011943 A CN115011943 A CN 115011943A
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- evaporation source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a switchable uniformity correction plate group structure and a vacuum coating machine thereof, and relates to the technical field of evaporation mechanisms of vacuum coating equipment. The evaporation source platform is provided with an electron beam evaporation source, the evaporation source platform is provided with a plurality of uniformity correction plates, the plurality of uniformity correction plates are arranged around the electron beam evaporation source and are positioned on the evaporation source platform, each correction plate is connected with the evaporation source platform through a plate penetrating sealing piece, and each plate penetrating sealing piece extends to the bottom of the evaporation source platform and is in transmission connection with a driving mechanism arranged at the bottom of the evaporation source platform. The invention can realize the limit optimization of each film layer by arranging a plurality of uniformity correction plates, and adopts the same rotation technology as that of the evaporation source correction plates to reduce the generation of micro-particle pollution.
Description
Technical Field
The invention belongs to the technical field of evaporation mechanisms of vacuum coating equipment, and particularly relates to a switchable uniformity correction plate group structure and a vacuum coating machine thereof.
Background
In the vacuum multi-film coating process, a high-uniformity correction plate with corresponding materials and corresponding speed can be debugged in a single layer before evaporation, and then the correction plate is multiplexed in combination in the multi-film coating process so as to improve the integral film thickness uniformity. Each material uniformity correction plate uses a rotatable correction plate structure to maximize control of the generation of microparticles in the chamber. Can be used in the conventional silicon process, and can also be used in the evaporation process of third generation semiconductor device, such as gallium arsenide, gallium nitride, and silicon carbide devices.
The existing domestic and foreign production equipment only has a single uniformity correction plate. The position of the correction plate is fixed. The multi-layer process can only mix all errors to obtain an average value, and each layer cannot be optimized. Because the evaporation cloud points generated by different evaporation rates of different materials have different rates, a general dome is difficult to manufacture to adapt to evaporation of all the materials at different rates, so that evaporation nonuniformity is inevitably caused, the dome and the uniformity correction plate are required to be matched to obtain higher evaporation uniformity, but the uniformity of a plurality of films can be adjusted to a higher level by only using one uniformity correction plate. The contamination of microparticles by the switching process is also fatal by immature correction plate designs.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a switchable uniformity correction plate group structure, which is a good solution for the process with high requirement on uniformity of multiple films by arranging a plurality of uniformity correction plates, so that one speed of each material corresponds to an optimal correction plate, the optimization of the single correction plate can use a four-probe station to test the film thickness of a wafer, and then the correction plates are corrected to be extremely uniform, then the optimized single film layer is stacked to solve the uniformity of the multi-film layer process, compared with the single uniformity correction plate, the structure can realize the ultimate optimization of each film layer without taking correction plate parameters which are not suitable for the whole film system for other film layers; meanwhile, the same rotating technology as that of the evaporation source baffle is adopted to reduce the generation of micro-particle pollution.
The invention provides a switchable uniformity correction plate group structure, which comprises a cavity and an evaporation source platform arranged in the cavity, wherein an electron beam evaporation source is arranged on the evaporation source platform, a plurality of correction plates are arranged on the evaporation source platform around the electron beam evaporation source, and each correction plate is arranged on the evaporation source platform through a connecting rod;
each connecting rod penetrates through the evaporation source platform, extends to the bottom of the evaporation source platform and is in transmission connection with a driving mechanism arranged at the bottom of the evaporation source platform;
the plate surface of each correction plate is vertical to the axis of the connecting rod;
when the driving mechanism drives any connecting rod to rotate, the correcting plate connected to the connecting rod can be partially shielded above the electron beam evaporation source.
Preferably, the evaporation source platform is provided with a first through hole for each connecting rod to penetrate through, and the inner wall of the first through hole is hermetically connected with the connecting rod through a plate penetrating sealing element.
Preferably, an evaporation source baffle plate is further arranged above the electron beam evaporation source, the evaporation source baffle plate is arranged on the evaporation source platform through a connecting piece, the connecting piece penetrates through the evaporation source platform, extends to the bottom of the evaporation source platform, and is in transmission connection with a driving mechanism arranged at the bottom of the evaporation source platform; the evaporation source platform is provided with a second through hole for the connecting piece to penetrate through, and the inner wall of the second through hole is hermetically connected between the connecting pieces through a plate penetrating sealing piece.
More preferably, the plate penetrating sealing element is at least two sealing rings or magnetic fluid; the sealing ring is sleeved on the connecting rod or the connecting piece.
Preferably, the top of the cavity is also provided with a disc body for suspending the wafer, and the disc body is rotatably connected to the top of the cavity through a rotary seal shaft; a plurality of third through holes are formed in the periphery of the tray body at equal intervals, a wafer cover for coating is arranged on one side, opposite to the top of the cavity, of the third through holes, and the wafer cover is fixed on the tray body through a plurality of fixing clamps arranged at equal intervals.
More preferably, each fixing clamp comprises a pressing sheet arranged on the disc body, one end of each pressing sheet is fixed on the disc body through a bolt, and the other end of each pressing sheet extends to the third through hole and is used for pressing and arranging the wafer covered on the third through hole; and a sunk groove for embedding the wafer is formed in the circumferential direction of the hole opening of each third through hole.
Preferably, the evaporation source platform is further provided with a film thickness probe, and the film thickness probe is used for monitoring the evaporation rate of the electron beam evaporation source and adjusting the evaporation power of the electron beam evaporation source by using a PID so as to achieve the technical process of coating by using the set evaporation rate.
More preferably, the film thickness probe is cooled by water cooling to eliminate the test drift influence caused by high temperature in the evaporation process of the electron beam evaporation source.
Preferably, the inside of the electron beam evaporation source is cooled by water cooling so as to protect the rotary sealing structure in the electron beam evaporation source.
The second purpose of the invention is to provide a vacuum coating machine, which comprises the switchable uniformity correction plate group structure.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a switchable uniformity correction plate group structure, which is characterized in that a plurality of uniformity correction plates are arranged, so that one speed of each material corresponds to an optimal correction plate, the optimization of the single correction plate can be achieved by using four probe stations, then the optimized single film layer is stacked to solve the multi-film layer process, compared with the single uniformity correction plate, the structure can achieve the ultimate optimization of each film layer, and the parameters of the correction plate which are not suitable for the whole film system are not required to be obtained from other film layers, so that the switchable uniformity correction plate group structure is a good solution for the process with high requirement on the uniformity of the multi-film layer; meanwhile, the same rotation technology as that of the evaporation source correction plate is adopted to reduce the generation of micro-particle pollution.
The invention forms an evaporation uniformity adjusting system through a rotating system consisting of a disc body and a wafer fixing clamp on the disc body and a correcting plate assembly consisting of a plurality of correcting plates, and is used for controlling the uniformity adjusting system of a single-layer film or a composite multi-layer film system. The evaporation source baffle and the electron beam evaporation source form an evaporation source switch system to provide film evaporation cloud required by evaporation. The film thickness probe is used for monitoring the evaporation rate of the electron beam evaporation source, the monitoring data of the film thickness probe provides a feedback value, PID closed-loop control which takes the preset evaporation rate as a target is formed with the electron beam power of the electron beam evaporation source and is used for accurately controlling the film coating rate, the film thickness is integrated, when the film thickness reaches a set value, the evaporation source baffle is closed, then the evaporation power of the electron beam evaporation source is reduced to 0, and the film coating is finished.
Drawings
Fig. 1 is a schematic diagram of a switchable uniformity correction plate set structure provided in the present invention.
Fig. 2 is a schematic structural view of a part of a fixing clamp in a switchable uniformity correction plate set structure provided by the invention.
Detailed Description
The following detailed description of the present invention is provided in conjunction with the accompanying drawings, but it should be understood that the scope of the present invention is not limited to the specific embodiments.
Examples
A switchable uniformity correction plate group structure is shown in figures 1 and 2 and comprises a cavity and an evaporation source platform 1 arranged in the cavity, an electron beam evaporation source 10 arranged on the evaporation source platform 1, a plurality of correction plates arranged on the evaporation source platform 1 and positioned around the electron beam evaporation source 10, and each correction plate is arranged on the evaporation source platform 1 through a connecting rod 11; wherein the plurality of correction plates comprise a uniformity correction plate A2, a uniformity correction plate B3 and a uniformity correction plate C8; the uniformity correction plate A, the uniformity correction plate B and the uniformity correction plate C form a uniformity correction plate group, and more correction plates can be added on an evaporation source table to form a more complex film thickness adjusting system; because each correction plate only corresponds to one speed of one material, the thinning adjustment of each layer of film can be realized, the thickness of the multilayer film is only the film stacking of each layer which is optimized optimally, and finally the multilayer film with the highest uniformity is obtained.
Each connecting rod 11 penetrates through the evaporation source platform 1, extends to the bottom of the evaporation source platform 1, and is in transmission connection with a driving mechanism arranged at the bottom of the evaporation source platform 1;
the plate surface of each correction plate is vertical to the axis of the connecting rod 11;
when the driving mechanism drives any connecting rod 11 to rotate, the correction plate connected to the connecting rod 11 can be partially shielded above the electron beam evaporation source 10, and the other two correction plates can move out of the upper part of the electron beam evaporation source 10 along with the rotation of the connecting rod, so that each correction plate only corresponds to one material at a speed, and the fine adjustment of each film can be realized.
In order to realize the rotation of the connecting rods 11 and the sealing connection with the evaporation source platform 1, a first through hole for each connecting rod 11 to penetrate through is formed in the evaporation source platform 1, and the inner wall of the first through hole is in sealing connection with the connecting rods 11 through a plate penetrating sealing element.
Meanwhile, an evaporation source baffle plate 9 is also arranged above the electron beam evaporation source 10, the evaporation source baffle plate 9 is arranged on the evaporation source platform 1 through a connecting piece 91, the connecting piece 91 penetrates through the evaporation source platform 1 and extends to the bottom of the evaporation source platform 1, and the connecting piece 91 is in transmission connection with a driving mechanism arranged at the bottom of the evaporation source platform 1; the evaporation source platform 1 is provided with a second through hole for the connection piece 91 to penetrate through, and the inner wall of the second through hole is hermetically connected between the connection piece 91 through a plate penetrating sealing piece. The driving mechanism may be a motor.
The plate penetrating sealing element is at least two sealing rings or magnetic fluid; the sealing ring is sleeved on the connecting rod 11 or the connecting piece 91. The sealing rings sleeved on the connecting rod 11 or the connecting piece 91 are common sealing shafts sealed by sleeving two sealing rings between the connecting rod 11 or the connecting piece 91 and the corresponding first through hole and second through hole, and the other sealing shaft is sealed by filling magnetic fluid between the connecting rod 11 or the connecting piece 91 and the corresponding first through hole and second through hole, and is called a magnetic fluid sealing shaft.
In the embodiment, the top of the cavity is also provided with a disc body 4, and the disc body 4 is rotationally connected to the top of the cavity through a rotary seal shaft 6; a plurality of third through holes 41 are formed in the circumference of the tray body 4 at equal intervals, a wafer cover for coating is arranged on one side, opposite to the top of the cavity, of the third through holes 41, and the wafer cover is fixed on the tray body 4 through a plurality of fixing clamps 5 arranged at equal intervals.
In order to fix the wafer on the disc body 4, each fixing clamp 5 comprises a pressing sheet 52 arranged on the disc body 4, one end of each pressing sheet 52 is fixed on the disc body 4 through a bolt 51, and the other end of each pressing sheet extends to the third through hole 41 and is used for pressing and arranging the wafer covered on the third through hole 41; during the coating process, the vapor passes through the third through hole 41 and is coated on the wafer covered on the third through hole 41, so as to realize the coating on the wafer.
In order to stably fix the wafer on the disk body when the disk body rotates, a circular sinking groove 42 for embedding the wafer is formed in the circumferential direction of the orifice of each third through hole 41, and after the wafer is embedded into the sinking groove 42, the wafer is pressed and fixed by a plurality of fixing clamps 5 arranged on the disk body 4 around the third through holes 41 at equal intervals, so that the stability of the wafer when the disk body rotates is improved. Wherein, be provided with the circular shape heavy groove on disk body 4 for place the wafer disk, prevent that the disk body from throwing away the wafer when rotatory, in addition soft preforming pushes down the wafer around the wafer disk, plays reliable fixed action, still is unlikely to with the wafer disk crushing.
It should be noted that the wafer is a wafer cut from a silicon (or other semiconductor material) ingot, cylinder, and then mechanically polished and cleaned to be manufactured by a semiconductor process.
The evaporation source platform 1 is also provided with a film thickness probe 7, the film thickness probe 7 is used for monitoring the evaporation rate of the electron beam evaporation source 10, and PID is used for adjusting the evaporation power of the electron beam evaporation source 10, so as to achieve the technical process of coating with the set evaporation rate.
The film thickness probe 7 is cooled by water cooling to eliminate the test drift influence caused by high temperature in the evaporation process of the electron beam evaporation source 10.
The inside of the electron beam evaporation source 10 is cooled by water cooling to protect the rotary sealing structure in the electron beam evaporation source 10.
Therefore, the invention sets up a plurality of uniformity correction plates, so that a speed of each material corresponds to an optimal correction plate, the optimization of the single correction plate can be achieved extremely by using four probe stations, then the optimized single film layer is stacked to solve the multi-film layer process, compared with the single uniformity correction plate, the structure can achieve the ultimate optimization of each film layer, and does not need to obtain a correction plate parameter which is not suitable for the whole film system with other film layers, thus being a good solution for the process with high requirement on the uniformity of the multi-film layer; meanwhile, the same rotating technology as that of the evaporation source baffle is adopted to reduce the generation of micro-particle pollution.
The invention forms an evaporation uniformity adjusting system through a rotating system consisting of a disc body and a wafer fixing clamp on the disc body and a correcting plate assembly consisting of a plurality of correcting plates, and is used for controlling the uniformity adjusting system of a single-layer film or a composite multi-layer film system. The evaporation source baffle and the electron beam evaporation source form an evaporation source switch system to provide film evaporation cloud required by evaporation. The film thickness probe is used for monitoring the evaporation rate of the electron beam evaporation source, the monitoring data of the film thickness probe provides a feedback value, PID closed-loop control which takes the evaporation rate set in advance as a target is formed with the electron beam power of the electron beam evaporation source and is used for accurately controlling the film coating rate, the film thickness is integrated, when the film thickness reaches a set value, the evaporation source baffle is closed, then the evaporation power of the electron beam evaporation source is reduced to 0, and the film coating is completed.
It should be noted that, in the evaporation process, when the evaporation source evaporates material vapor, the material vapor is evaporated upwards like boiling water, and is evaporated onto the top tray body, and the tray body rotates to eliminate the evaporation speed difference of the material vapor contacting the tray body. In addition, the uniformity correction plate shields the rotating disc body like a shadow under the disc body, so that the effect of correcting the thickness of the wafer film can be achieved.
Example 2
A vacuum coater comprising the switchable uniformity correction plate set structure provided in embodiment 1. When a multilayer film needs to be evaporated, for example, a three-layer film, a first layer film can be optimized in advance with a certain power and a certain speed of film thickness uniformity, the evaporated film thickness is tested by using a four-probe station, then the correction plate is modified in a feedback manner to obtain a limit optimized uniformity correction plate, and then the other two correction plates are modified in sequence by the same method. When in evaporation, the driving mechanism drives the three connecting rods 11, firstly, the closing correction plate B and the correction plate C move out of the upper part of the electron beam evaporation source 10 along with the rotation of the connecting rods, and the opening correction plate A rotates to be partially shielded above the electron beam evaporation source 10 to evaporate a first layer of film; then closing the correction plate A and the correction plate C, opening the correction plate B, and evaporating a second layer of film; and finally, closing the correction plate A and the correction plate B, opening the correction plate C, and evaporating the third layer of film. Thus, a first layer, a second layer and a third layer can be compounded, and the vapor-deposited multilayer film is realized.
The above disclosure is only for the specific embodiment of the present invention, but the embodiment of the present invention is not limited thereto, and any variations that can be made by those skilled in the art should fall within the scope of the present invention.
Claims (10)
1. A switchable uniformity correction plate group structure comprises a cavity and an evaporation source platform (1) arranged in the cavity, wherein an electron beam evaporation source (10) is arranged on the evaporation source platform (1), and the switchable uniformity correction plate group structure is characterized in that a plurality of correction plates are arranged on the evaporation source platform (1) and around the electron beam evaporation source (10), and each correction plate is arranged on the evaporation source platform (1) through a connecting rod (11);
each connecting rod (11) penetrates through the evaporation source platform (1), extends to the bottom of the evaporation source platform (1), and is in transmission connection with a driving mechanism arranged at the bottom of the evaporation source platform (1);
the plate surface of each correction plate is vertical to the axis of the connecting rod (11);
when the driving mechanism drives any connecting rod (11) to rotate, the correction plate connected to the connecting rod (11) can be partially shielded above the electron beam evaporation source (10).
2. The switchable uniformity correction plate set structure according to claim 1, wherein a first through hole is opened on the evaporation source platform (1) for each connection rod (11) to pass through, and an inner wall of the first through hole is hermetically connected with the connection rod (11) through a through-plate sealing member.
3. The switchable uniformity correction plate set structure according to claim 1, wherein an evaporation source baffle plate (9) is further disposed above the electron beam evaporation source (10), the evaporation source baffle plate (9) is disposed on the evaporation source platform (1) through a connecting piece (91), the connecting piece (91) penetrates through the evaporation source platform (1) and extends to the bottom of the evaporation source platform (1), and is in transmission connection with a driving mechanism disposed at the bottom of the evaporation source platform (1); the evaporation source platform (1) is provided with a second through hole for the connection piece (91) to penetrate through, and the inner wall of the second through hole is connected between the connection pieces (91) in a sealing mode through a plate penetrating sealing piece.
4. The switchable uniformity correction plate set structure of claim 3, wherein said through plate seals are at least two sealing rings or a magnetic fluid; the sealing ring is sleeved on the connecting rod (11) or the connecting piece (91).
5. The switchable uniformity correction plate set structure according to claim 1, wherein a disc body (4) for suspending a wafer is further provided on the top of the chamber, and the disc body (4) is rotatably connected to the top of the chamber by a rotary seal shaft (6); a plurality of third through holes (41) are formed in the circumference of the tray body (4) at equal intervals, a wafer cover for coating is arranged on one side, opposite to the top of the cavity, of the third through holes (41), and the wafer cover is fixed on the tray body (4) through a plurality of fixing clamps (5) arranged at equal intervals.
6. The switchable uniformity correction plate set structure according to claim 5, wherein each fixing clamp (5) comprises a pressing plate (52) arranged on the disc body (4), one end of the pressing plate (52) is fixed on the disc body (4) through a bolt (51), and the other end of the pressing plate extends to the third through hole (41) for pressing and arranging a wafer covered on the third through hole (41); and a sunk groove (42) for embedding the wafer is formed in the circumferential direction of the orifice of each third through hole (41).
7. The switchable uniformity correction plate set structure according to claim 1, wherein a film thickness probe (7) is further disposed on the evaporation source platform (1), the film thickness probe (7) is used for monitoring the evaporation rate of the electron beam evaporation source (10), and the evaporation power of the electron beam evaporation source (10) is adjusted by using PID to achieve a process of coating with a set evaporation rate.
8. The switchable uniformity correction plate set structure according to claim 7, wherein the film thickness probe (7) is cooled by water cooling to eliminate test drift effects caused by high temperature during evaporation process of the electron beam evaporation source (10).
9. The switchable uniformity correction plate set structure according to claim 1, wherein the temperature inside the electron beam evaporation source (10) is reduced by water cooling to protect the rotary seal structure in the electron beam evaporation source (10).
10. A vacuum coater comprising the switchable uniformity correction plate set structure of any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210710733.9A CN115011943A (en) | 2022-06-22 | 2022-06-22 | Switchable uniformity correcting plate group structure and vacuum coating machine thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210710733.9A CN115011943A (en) | 2022-06-22 | 2022-06-22 | Switchable uniformity correcting plate group structure and vacuum coating machine thereof |
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| Publication Number | Publication Date |
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| CN115011943A true CN115011943A (en) | 2022-09-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210710733.9A Pending CN115011943A (en) | 2022-06-22 | 2022-06-22 | Switchable uniformity correcting plate group structure and vacuum coating machine thereof |
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|---|---|---|---|---|
| JPH06337310A (en) * | 1992-10-23 | 1994-12-06 | Matsushita Electric Ind Co Ltd | Optical multilayer film, film forming method, and film forming device therefore |
| CN1891848A (en) * | 2005-07-01 | 2007-01-10 | 鸿富锦精密工业（深圳）有限公司 | Optical coating device |
| JP2009079276A (en) * | 2007-09-27 | 2009-04-16 | Showa Shinku:Kk | Vacuum vapor deposition apparatus |
| CN202595269U (en) * | 2012-05-21 | 2012-12-12 | 杭州大和热磁电子有限公司 | Vacuum coating device and vacuum coating control system |
| CN205295446U (en) * | 2016-01-18 | 2016-06-08 | 合肥京东方光电科技有限公司 | Vacuum evaporation filming equipment |
| CN206480606U (en) * | 2016-12-09 | 2017-09-08 | 中芯国际集成电路制造(北京)有限公司 | Wafer mounting apparatus and wafer sort fixture |
| CN206706201U (en) * | 2017-03-31 | 2017-12-05 | 王静辉 | Optical monitoring system multiple-piece thickness correcting device |
| CN112760601A (en) * | 2020-12-22 | 2021-05-07 | 南京光宝光电科技有限公司 | Coating equipment with correction device and coating correction method |
| CN214428608U (en) * | 2021-02-26 | 2021-10-19 | 苏州新米特电子科技有限公司 | Wafer tray placing rack |
-
2022
- 2022-06-22 CN CN202210710733.9A patent/CN115011943A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06337310A (en) * | 1992-10-23 | 1994-12-06 | Matsushita Electric Ind Co Ltd | Optical multilayer film, film forming method, and film forming device therefore |
| CN1891848A (en) * | 2005-07-01 | 2007-01-10 | 鸿富锦精密工业（深圳）有限公司 | Optical coating device |
| JP2009079276A (en) * | 2007-09-27 | 2009-04-16 | Showa Shinku:Kk | Vacuum vapor deposition apparatus |
| CN202595269U (en) * | 2012-05-21 | 2012-12-12 | 杭州大和热磁电子有限公司 | Vacuum coating device and vacuum coating control system |
| CN205295446U (en) * | 2016-01-18 | 2016-06-08 | 合肥京东方光电科技有限公司 | Vacuum evaporation filming equipment |
| CN206480606U (en) * | 2016-12-09 | 2017-09-08 | 中芯国际集成电路制造(北京)有限公司 | Wafer mounting apparatus and wafer sort fixture |
| CN206706201U (en) * | 2017-03-31 | 2017-12-05 | 王静辉 | Optical monitoring system multiple-piece thickness correcting device |
| CN112760601A (en) * | 2020-12-22 | 2021-05-07 | 南京光宝光电科技有限公司 | Coating equipment with correction device and coating correction method |
| CN214428608U (en) * | 2021-02-26 | 2021-10-19 | 苏州新米特电子科技有限公司 | Wafer tray placing rack |
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