CN114982391A - 用于功率模块的陶瓷衬底及包括其的功率模块 - Google Patents
用于功率模块的陶瓷衬底及包括其的功率模块 Download PDFInfo
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Abstract
根据本发明的陶瓷衬底包括:陶瓷基材;形成在陶瓷基材上的电极图案;和至少一个间隔物,其中该至少一个间隔物设置在陶瓷基材和电极图案中安装有半导体芯片的任何一个区域中。
Description
技术领域
本发明涉及一种用于功率模块的陶瓷衬底以及包括其的功率模块,该陶瓷衬底能够有效地消散从半导体芯片产生的热。
背景技术
由于环境问题和化石能源的枯竭,人们对混合动力汽车和电动汽车的兴趣及其发展日益增加。环保型汽车设置有逆变器或转换器等功率转换装置,用于将从可充电电池或使用氢燃料的燃料电池提供的功率转换为驱动电动机的功率。
功率转换装置包括功率模块,用于功率转换的功率半导体芯片安装在该功率模块上。
通常,通过将半导体芯片安装在陶瓷衬底上来配置功率模块,其中该半导体芯片是由绝缘栅双极晶体管(IGBT)或二极管形成的,或由诸如氮化镓(GaN)或碳化硅(SiC)的材料制成的。
设置在功率模块中的半导体芯片在功率转换过程中产生大量的热量。当所产生的热量不能迅速消散时,半导体芯片的特性可能会劣化,半导体芯片可能不能稳定地工作,因此逐渐提出了各种类型的功率模块的散热方式。
最近,为了改善功率模块的散热性能,提出了一种双侧冷却(DSC)功率模块,其中半导体芯片安装在一对陶瓷衬底之间,以向半导体芯片的两个表面散热。该双侧冷却功率模块的结构为:电极图案形成在一对衬底中每一个的一个表面上,并且半导体芯片安装在彼此相对的一对电极图案之间,并且可以在每个陶瓷衬底上安装散热器,从而与传统的单侧冷却类型相比改善散热效果。
然而,在双侧冷却功率模块中,支撑结构被安装以保持陶瓷衬底之间的分离距离,当该支撑结构由于从半导体芯片发出的热而热膨胀时,陶瓷衬底之间的距离可能不会持续保持,从而安装在陶瓷衬底之间的半导体芯片可能与陶瓷衬底的电极图案分离。
为了防止分离,可以在半导体芯片和电极图案之间插入诸如TIM的热界面材料,但是硅或聚合物基热界面材料不具有大的热容量,因此不能有效地将半导体芯片的高温向陶瓷衬底传递。
发明内容
技术问题
本发明是为了解决上述问题而进行的,本发明的目的是提供一种用于具有改进结构的功率模块的陶瓷衬底,其中半导体芯片的热可以有效地向陶瓷衬底传递,以及包括该陶瓷衬底的功率模块。
针对问题的技术方案
为了实现该目的,根据本发明的一个实施例,提供了一种用于功率模块的陶瓷衬底,该陶瓷衬底包括陶瓷基材、形成在陶瓷基材上的至少一个电极图案、和设置在陶瓷基材或电极图案上的至少一个间隔物,其中间隔物可以具有导电性和导热性,并且可以由热膨胀系数低于所述电极图案的热膨胀系数的材料制成。
所述间隔物可以和安装在电极图案上半导体芯片接合。
通过钎焊-接合可以将间隔物安装在电极图案上。
间隔物可以由CPC材料制成,其中铜(Cu)、铜钼(Cu-Mo)和铜(Cu)依次堆叠在CPC材料中。
电极图案可以由铜(Cu)材料制成,以及形成在金属层的至少一个表面上,其中该金属层被钎焊接合到陶瓷基材的两个表面。
根据该实施例的功率模块可以包括一对陶瓷衬底(其中电极图案形成在陶瓷基材的至少一个表面上),设置在所述一对陶瓷衬底之间并电连接到所述电极图案的半导体芯片,以及设置在所述一对陶瓷衬底之间具有导电性和导热性的间隔物,所述间隔物由CPC材料制成,其中铜(Cu)、铜钼(Cu-Mo)和铜(Cu)依次堆叠在所述CPC材料中,所述CPC材料的热膨胀系数低于所述电极图案的热膨胀系数。
间隔物可以设置为具有和半导体芯片的面积相对应的面积。
间隔物也可以被钎焊-接合到半导体芯片的整个一个表面或两个表面,以及钎焊-接合到陶瓷基材或电极图案。
发明的有利效果
根据本发明,由热膨胀系数低于电极图案的热膨胀系数的CPC制成的间隔物被用在一对陶瓷衬底之间的空间中,或通过插入电极图案和半导体芯片之间而被使用。因此,即使当由于半导体芯片产生的热量而使得功率模块的温度增加时,也可以持续地保持这一对陶瓷衬底之间的距离,从而半导体芯片不会与电极图案分离,并且半导体芯片的热量可以有效地传递到陶瓷衬底,从而改善功率模块的散热性能。
附图说明
图1是示出了根据本发明的实施例的用于功率模块的陶瓷衬底的透视图。
图2是示出了图1中间隔物和电极图案分离的状态的透视图。
图3是示出了根据本发明的实施例的功率模块的部分截面图。
图4是示出了根据本发明的另一实施例的功率模块的部分截面图。
图5是示出了根据本发明的实施例的用于功率模块的陶瓷衬底的制造方法的流程图。
图6是示出了在根据本发明的实施例的用于功率模块的陶瓷衬底的制造方法中,通过光刻工艺形成间隔物的操作的流程图。
图7A是示出了已经将光刻胶施加到电极图案的状态的示意图。
图7B是示出了在光刻胶上设置掩膜然后照射光的状态的示意图。
图7C是示出了已显影曝光的光刻胶的状态的示意图。
图7D是示出了除了保留光刻胶的区域之外的部分已经在厚度方向上被部分蚀刻的状态的示意图。
图7E是示出了已去除剩余光刻胶的状态的示意图。
具体实施方式
以下,将参考附图详细描述本发明的实施例。
根据本发明的实施例的用于功率模块的陶瓷衬底1可应用于双侧冷却功率模块(图3中的附图标记100),其中半导体芯片安装在两个陶瓷衬底之间,该半导体芯片由二极管、绝缘栅双极晶体管(IGBT)、金属氧化物半导体场效应晶体管(MOSFET)、结场效应晶体管(JFET)或高电迁移率晶体管(HEMT)形成,或者由诸如碳化硅(SiC)或氮化镓(GaN)的材料制成的。该功率模块用于提供驱动混合动力汽车和电动汽车的电机的高压电流,与一侧具有散热器的单侧冷却功率模块相比,该双侧冷却功率模块具有优异的冷却性能,因此可以应用于高输出功率模块。
图1是示出了根据本发明的实施例的用于功率模块的陶瓷衬底的透视图。图2是示出了图1中间隔物和电极图案分离的状态的透视图。
如图1所示,根据本发明的实施例的用于功率模块的陶瓷衬底1可以包括陶瓷基材10、形成在陶瓷基材10上的至少一个电极图案20、以及设置在陶瓷基材10或电极图案20上的间隔物30,该间隔物具有导电性和导热性,并且由热膨胀系数低于电极图案20的热膨胀系数的材料制成。
例如,陶瓷基材10可以由氧化铝(Al2O3)、AlN、SiN和Si3N4中的任何一种制成,并可在1000℃或更高的高温下进行烧结。
电极图案20可以形成在烧结的陶瓷基材10上。电极图案20可以以各种方式形成,并且通常也可以通过将由金属材料制成的金属层钎焊-接合到陶瓷基材10然后蚀刻来形成,或者也可以通过首先通过冲压或机械加工对金属板进行图案化,然后将图案化的金属板钎焊-接合到陶瓷基材10来形成。半导体芯片2(见图3)可以安装在如上所述形成的电极图案20的表面上。形成电极图案20的金属层或金属板可以由具有优异的导电性和导热性的铜(Cu)材料制成。因此,电极图案20可以电连接到半导体芯片2,以用于传递控制信号,并用于将从半导体芯片2产生的热快速地移动到与金属层或金属板耦合的散热器(未示出),该金属层或金属板具有与陶瓷基材10和电极图案20相对应的体积。
间隔物30可以安装在陶瓷基材10或电极图案20上。间隔物30还可以具有与彼此相对的陶瓷衬底10相接合的两端,以用作支撑结构,并且还可以安装在安装半导体芯片2的电极图案20的区域上或未安装半导体芯片2的电极图案20上。
间隔物30可以是CPC材料,其中Cu/Cu-Mo/Cu依次堆叠在CPC材料中。CPC材料的热膨胀系数(CTE)为6.8~7.8ppm/K,热导率为220~280W/m·K。如上所述,CPC材料具有比聚合物基热界面材料相对更高的热导率,从而有利于散热,并且具有比用作电极图案20的材料的铜的热膨胀系数相对更低的热膨胀系数,从而可以最小化间隔物30的变形。
如上所述,当间隔物30用作用于保持陶瓷衬底1之间的距离的支撑结构时,间隔物30具有比电极图案20的热膨胀系数相对更低的热膨胀系数,从而可以最小化由于热膨胀(该热膨胀是由半导体芯片2产生的热引起的)而发生的对功率模块的损害。
此外,当间隔物30通过插入在半导体芯片2和电极图案20(半导体芯片2和电极图案20安装在一对陶瓷衬底1之间)之间而被使用时,间隔物30具有约220~280W/m·K的良好热导率,从而可以将从半导体芯片2发出的热快速传递到陶瓷基材10,从而改善散热性能。此时,间隔物30可以形成为对应于安装在电极图案20上的半导体芯片2的区域。当间隔物30的面积形成为小于半导体芯片2的面积时,难以期望有效的散热。当间隔物30的面积形成为比半导体芯片2的面积大得多时,可能会出现间隔物30干扰周围的其他部分而导致电短路的问题,因此间隔物30可形成为略大于或等于与半导体芯片2相对应的面积。间隔物30可以钎焊接合到电极图案20的区域,其中半导体芯片2安装在电极图案20上。钎焊工艺是在大约400~900℃的操作温度下,用插入在间隔物30和电极图案20之间的填料层将间隔物30和电极图案20接合的方法。此时,填料层可以具有从Ag、Cu和AgCu中选择的一种或它们之间的两种以上相混合的结构。Ag、Cu和AgCu合金具有高的热导率,因此可以将从半导体芯片2产生的热快速传递到间隔物30。钎焊工艺是通过施加热来接合两个基材的工艺,在此不会损坏基材,从而可以将其上安装有半导体芯片2的间隔物30和电极图案20耦合在一起,同时使对间隔物30和电极图案20的损坏最小化。
如上所述,当使用间隔物30把电极图案20和半导体芯片2热接合和电接合时,间隔物30具有比由聚合物和陶瓷填料的混合物制成的热界面材料(TIM)的热膨胀系数高的热膨胀系数,但具有比广泛用作电极材料的金属(例如铜)的热膨胀系数低的热膨胀系数,因此即使在高温环境中长时间使用间隔物30,也可以确保功率模块的尺寸稳定性。
以下,将详细描述根据本发明的实施例的功率模块100。为了说明,可以夸大描述功率模块100的附图中的各个组件的尺寸,并且不表示实际应用的尺寸。
图3是示出根据本发明的实施例的功率模块的部分截面图。图4是示出根据本发明的另一实施例的功率模块的部分截面图。
如图3和4所示,作为双侧冷却功率模块的根据本发明的功率模块100可以包括一对陶瓷衬底1a和1b,其中电极图案20a和20b形成在陶瓷基材10a和10b的至少一个表面上;半导体芯片2,其中半导体芯片2设置在这一对陶瓷衬底1a和1b之间,并且电连接到电极图案20a和20b;间隔物30,其中间隔物30设置在这一对陶瓷衬底1a和1b之间,具有导电性和导热性,并且由热膨胀系数低于电极图案20a和20b的热膨胀系数的材料制成。
这里,这一对陶瓷衬底1a和1b中的至少一个可以包括间隔物30,该间隔物30形成在半导体芯片2安装在电极图案20上的区域中。间隔物30可以由具有高热导率和低热膨胀系数的CPC材料制成,以稳定地消散从半导体芯片2发出的热。如上所述,根据本发明的功率模块可以更精确地安装半导体芯片2,并通过在安装半导体芯片2(诸如IGBT、二极管、GaN芯片和SiC芯片)的安装区域中形成间隔物30来有效地散热。
图3示出了一个示例,其中根据本发明的实施例的功率模块100包括第一陶瓷衬底1a和第二陶瓷衬底1b,其中电极图案20a和20b形成在陶瓷基材10a和10b上,并且第一间隔物30a设置在第一陶瓷衬底1a上。这里,半导体芯片2的一个表面可以通过接合层B接合到间隔物30的上表面,半导体芯片2的另一个表面可以通过接合层B接合到第二陶瓷衬底1b的电极图案20b。此外,间隔物30还可以通过接合层B钎焊接合到第一陶瓷衬底1a和第二陶瓷衬底1b的陶瓷基材10a和10b中的至少一个。
接合层B可以包括焊料或银膏。焊料可以由具有高接合强度和优异高温可靠性的SnPb基、SnAg基、SnAgCu基或Cu基焊料膏形成。与焊料相比,银膏具有更好的高温可靠性和更高的热导率。银膏可以含有90~99wt%的Ag粉末和1~10wt%的粘结剂以具有高热导率,并且Ag粉末可以是纳米颗粒。纳米颗粒的银粉末具有较高的比表面积,因而具有较高的接合密度和热导率。
如图所示4,根据本发明的另一实施例的功率模块100'可以具有分别形成在第一陶瓷衬底1a和第二陶瓷衬底1b上的第一间隔物30a和第二间隔物30b,并且半导体芯片2的两个表面可以接合到第一间隔物30a和第二间隔物30b。此时,半导体芯片2的两个表面可以通过包括焊料或银膏的接合层B接合到第一间隔物30a和第二间隔物30b。如上所述,当半导体芯片2的两个表面接合到第一间隔物30a和第二间隔物30b时,可以进一步提高散热性能。
以下,将参考图5描述根据本发明的实施例的用于功率模块的陶瓷衬底1的制造方法。
图5是根据本发明的实施例的用于功率模块的陶瓷衬底的制造方法的流程图。
如图5所示,根据本发明的实施例的用于功率模块的陶瓷衬底的制造方法可以包括将金属层接合在陶瓷基材10上的操作(S10)、通过蚀刻金属层来形成电极图案20的操作(S20)、以及在电极图案20的安装半导体芯片的区域中形成间隔物30的操作(S30)。
金属层的接合(S10)可以通过活性金属钎焊(AMB)工艺将由金属制成的金属层接合在陶瓷基材10上。陶瓷基材10可以是例如氧化铝(Al2O3)、AlN、SiN和Si3N4中的任一种。由金属制成的金属层可以在780~1100℃下烧制,以钎焊接合到陶瓷基材10的上表面和下表面。衬底被称为活性金属钎焊(AMB)衬底。
这里,金属层可以是铜材料。由于铜具有400W/m·K的热导率,因此可以有效地消散从半导体芯片2产生并通过间隔物30传递的热。
形成电极图案的操作(S20)可以通过根据设计的图案蚀刻接合到陶瓷基材10的金属层来形成电极图案20。
形成间隔物的操作(S30)可以将间隔物30钎焊接合到安装半导体芯片的电极图案20的区域。钎焊是在大约400~900℃的操作温度下,用插入在间隔物30和电极图案20之间的填料层将间隔物30和电极图案20接合的方法。此时,填料层可以具有从Ag、Cu和AgCu中选择的一种或它们中两种以上相混合的结构。Ag、Cu和AgCu合金具有高的热导率,以促进从半导体芯片产生的热量的消散。
间隔物30可以是CPC材料,其中Cu/Cu-Mo/Cu依次堆叠在该CPC材料中。CPC材料的热膨胀系数(CTE)为6.8~7.8ppm/K,热导率为220~280W/m·K。如上所述,CPC材料具有比聚合物基热界面材料相对更高的热导率,从而有利于散热,并且具有比用作电极图案20的材料的铜相对更低的热膨胀系数,从而可以最小化间隔物30的变形。
如上所述,根据本发明的实施例的用于功率模块的陶瓷衬底的制造方法可以提高安装半导体芯片时的精度,并且通过将间隔物30附接到要安装半导体芯片的位置,可将由于由半导体芯片2产生的热引起的热膨胀而发生的对功率模块的损坏最小化。
同时,形成间隔物的操作(S30)也可以通过利用光刻工艺在厚度方向上部分蚀刻电极图案20来形成间隔物30。
如图6所示,形成间隔物30的操作(S30)可以包括:在电极图案20上施加光刻胶P的操作(S31),在将具有与安装半导体芯片的区域对应的图案的掩膜M设置在光刻胶P上之后照射光的操作(S32),在显影曝光的光刻胶P之后在厚度方向上部分蚀刻除所述区域之外的电极图案20的一部分的操作(S33),以及通过去除保留在所述区域上的光刻胶P来暴露间隔物30区域的操作(S34)。
在施加光刻胶P(S31)的操作中,可将光刻胶P以一定厚度施加到电极图案20上,如图7A所示。电极图案20可以由铜制成。此外,优选地,电极图案20形成为具有大于设计厚度的厚度。例如,陶瓷基材10的厚度可以是0.32t,并可以形成为1.0t的厚度,其大于0.5t,其为设计的电极图案20的厚度。这里,增加0.5t的厚度是为了形成间隔物30。
如图7B所示,照射光的操作(S32)可以将掩膜M设置在光刻胶P上,其中该掩膜M具有与安装半导体芯片的区域相对应的图案,然后照射诸如紫外线(UV)的光源。如上所述,通过照射光源穿过掩膜M,可以将形成在掩膜M上的图案转移到光刻胶P上。这里,仅显影由光源曝光的部分的类型是正显影法,仅显影未曝光部分的类型是负显影法。尽管本发明描述了其中使用正型光刻胶的示例,但也可以使用负型光刻胶。
在蚀刻操作(S33)中,当曝光后显影光刻胶P时,仅保留与掩膜M图案对应的区域中的光刻胶P,如图7C所示。
此后,当通过诸如干法蚀刻或湿法蚀刻的工艺,在厚度方向上部分蚀刻没有光刻胶P的部分,即,除了安装半导体芯片的区域之外的部分时,如图7D所示,保留光刻胶P的部分,即间隔物30区域可以突出。
换言之,当电极图案20形成为比设计厚度增加0.5t的1.0t的厚度时,通过将没有光刻胶P的部分半蚀刻0.5t的厚度,保留光刻胶P的部分可以比被蚀刻部分突出0.5t的厚度。
如图7E所示,暴露间隔物区域的操作(S34)可以通过去除保留在间隔物30区域上的光刻胶P来暴露间隔物30区域,该间隔物区域是安装半导体芯片的区域。
如上所述,根据本发明的另一实施例的用于功率模块的陶瓷衬底的制造方法可以通过利用光刻工艺在厚度方向上部分蚀刻电极图案20,在安装半导体芯片的区域中整体地形成间隔物30。由于形成了间隔物30,所以可以提高安装半导体芯片时的精度,并提高散热性能。
上面已经参考示例性附图描述了本发明,本发明但不受所描述的实施例的限制,并且对本领域技术人员来说显而易见的是,在不脱离本发明的精神和范围的情况下,可以对本发明进行各种修改和改变。因此,这些修改的示例或改变的示例将属于本发明的权利要求,并且本发明的范围应基于所附的权利要求来解释。
Claims (13)
1.一种用于功率模块的陶瓷衬底,包括:
陶瓷基材;
形成在所述陶瓷基材上的至少一个电极图案;和
设置在所述陶瓷基材或所述电极图案上的至少一个间隔物,
其中,所述间隔物具有导电性和导热性,并且由热膨胀系数低于所述电极图案的热膨胀系数的材料制成。
2.根据权利要求1所述的用于功率模块的陶瓷衬底,其中,所述间隔物和安装在所述电极图案上的半导体芯片接合。
3.根据权利要求1所述的用于功率模块的陶瓷衬底,其中,所述间隔物被钎焊接合到所述电极图案。
4.根据权利要求1所述的用于功率模块的陶瓷衬底,其中,所述间隔物由CPC材料制成,铜(Cu)、铜钼(Cu-Mo)和铜(Cu)依次堆叠在所述CPC材料中。
5.根据权利要求1所述的用于功率模块的陶瓷衬底,其中,所述电极图案形成在金属层的至少一个表面上,其中所述金属层钎焊接合到所述陶瓷基材的两个表面。
6.根据权利要求5所述的用于功率模块的陶瓷衬底,其中,所述金属层是铜(Cu)。
7.一种功率模块,包括:
一对陶瓷衬底,其中电极图案形成在陶瓷基材的至少一个表面上;
半导体芯片,所述半导体芯片设置在所述一对陶瓷衬底之间且电连接到所述电极图案;以及
设置在所述一对陶瓷衬底之间的间隔物,所述间隔物具有导电性和导热性,并且由热膨胀系数低于所述电极图案的热膨胀系数的材料制成。
8.根据权利要求7所述的功率模块,其中,所述间隔物和所述半导体芯片的一个表面接合。
9.根据权利要求7所述的功率模块,其中,所述间隔物和所述半导体芯片的两个表面接合。
10.根据权利要求7所述的功率模块,其中,所述间隔物具有与所述半导体芯片的面积相对应的面积。
11.根据权利要求7所述的功率模块,其中,所述间隔物被钎焊接合到所述陶瓷基材。
12.根据权利要求7所述的功率模块,其中,所述间隔物被钎焊接合到所述电极图案。
13.根据权利要求7所述的功率模块,其中,所述间隔物由CPC材料制成,铜(Cu)、铜钼(Cu-Mo)和铜(Cu)依次堆叠在所述CPC材料中。
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