CN1149765A - Semiconductor packaging with transparent window and its producing method - Google Patents

Semiconductor packaging with transparent window and its producing method Download PDF

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Publication number
CN1149765A
CN1149765A CN96109668A CN96109668A CN1149765A CN 1149765 A CN1149765 A CN 1149765A CN 96109668 A CN96109668 A CN 96109668A CN 96109668 A CN96109668 A CN 96109668A CN 1149765 A CN1149765 A CN 1149765A
Authority
CN
China
Prior art keywords
lead frame
sealant
potsherd
transparency window
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN96109668A
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Chinese (zh)
Other versions
CN1061174C (en
Inventor
柳仲夏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
LG Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Semicon Co Ltd filed Critical LG Semicon Co Ltd
Publication of CN1149765A publication Critical patent/CN1149765A/en
Application granted granted Critical
Publication of CN1061174C publication Critical patent/CN1061174C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

Disclosed is a semiconductor assembly with an improved transparent window and the manufacturing method, the semiconductor assembly has a transparent window formed at the middle part of a semiconductor device and has no upper ceramic chip and adhesive, and comprises: a semiconductor chip; a ceramic chip for mounting the semiconductor chip; a bending lead frame forming an angle; the transparent window fixed at the upper part of the lead frame and sealant arranged at the side faces of the ceramic chip and the transparent window.

Description

A kind of semiconductor packages and manufacture method thereof that has transparent window
The present invention relates to a kind of semiconductor packages and manufacture method thereof that has transparent window, particularly a kind of improved semiconductor packages and manufacture method thereof that forms transparent window at the middle part of semiconductor device.
Recently, people's requirement, semiconductor sealing material should possess low Jie's constant, high heat conductance and the required thermal coefficient of expansion close with semiconductor device, as electronic unit in industrial ability, high-speed cruising and the low manufacturing cost that should have extension storage.
Under this trend, developed the semiconductor packages that has window, state the problem that is run into to break away from existing skill.Fig. 1 illustrates a kind of ceramic dual in-line package (CERDIP) of charge-coupled device (CCD).As shown therein, the ceramic packaging that has transparency window is meant adheres to semiconductor chip 1, ceramic sealant 6 being applied under the pottery behind the sheet 2, a lead frame 4 is fixed thereon, and a side of sheet 2 central parts is coated chip sealant 3 under pottery again.In addition, semiconductor chip 1 and lead frame 4 are also with conductor wire 8 interconnection, and use transparency window sealant 7 comes sealed transparent window 10.
More detailed theory, as shown in Figure 2, conventional ceramic packaging is meant that a potsherd sealant 6 is applied on the ceramic sheet 2 down, and lead frame 4 is fixed thereon.In addition, downside have potsherd sealant 6 ceramic last slice 5 be positioned on again on the lead frame 4, heat-treat again, so that make ceramic sealant 6 fusings.
Simultaneously, tube core sealant 3 is coated onto pottery certain core of sheet 3 down, again semiconductor chip is installed on it, and does heat treatment.
Then, weld the lead 9 of semiconductor chip 1 and lead frame 4 with metal wire.In addition, the transparency window 10 that a side is had transparency window sealant 7 is installed on the pottery last slice 5, and does heat treatment, so that make 7 fusings of transparency window sealant, the close top that invests pottery last slice 5.
After this, repair lead frame 4, and finish the manufacturing of semiconductor packages.
But the conventional comfortable N-type semiconductor N of making pottery encapsulates and there is following each problem in manufacture method.
At first,, need relevant therewith extra manufacturing cost unfriendly, also make manufacture process complexification ground owing to purchase pottery last slice and the potsherd sealant that is coated on potsherd top again.
Secondly and since transparency window should be produced on auxiliary ceramic last slice on, between potsherd and transparency window sealant, just can not reach desirable sealing effectiveness.
Therefore, the purpose of this invention is to provide and a kind ofly can overcome routine and have that institute encounters problems in the semiconductor packages of transparent window and the manufacture method thereof, so that a kind of improved semiconductor packages and manufacture method thereof that has transparency window to be provided.
Another object of the present invention provides a kind of improved semiconductor packages and manufacture method thereof that has transparency window, and its transparency window is formed at the central part of semiconductor device.
For achieving the above object, the semiconductor packages that has transparency window that is provided comprises: a semiconductor chip; A potsherd is in order to install this semiconductor chip; Lead frame with the potsherd sealing makes this lead frame angulation and crooked; A transparency window that is fixed in lead frame top; And purchase sealant in this potsherd and transparency window one side.
For achieving the above object, the semiconductor package fabrication method that has transparency window that is provided, it comprises: the 1st step for preparing the potsherd of step-like bending; The 2nd step for preparing the potsherd sealant on this potsherd top; A lead frame is fixed to the 3rd step on potsherd sealant top; The 4th step of this potsherd of heat treatment and lead frame under the high temperature; The tube core sealant is coated in the 5th step on the potsherd; A semiconductor chip is fixed to the 6th step of tube core sealant 5; The 7th step with the lead of metal wire electricity bond semiconductor bonding pads and lead frame; To there be the transparency window of transparency window sealant to be fixed on the 8th step on this lead frame; The 9th step of this lead frame of heat treatment and transparency window under the high temperature; And the 10th step of repairing this lead frame.
Fig. 1 is the profile of conventional ceramic mould semiconductor packages.
Fig. 2 is the exploded view of Fig. 1.
Fig. 3 is according to semiconductor packages profile of the present invention.
Fig. 4 is the exploded view according to Fig. 3 of the present invention.
Fig. 5 is the semiconductor device plane graph that has transparent window according to of the present invention.
Fig. 6 A is according to the present invention, has formed the end view of window on lead frame top.
Fig. 6 B is according to the present invention, after transparency window is attached to lead frame, has formed the end view of window on lead frame top.
Fig. 7 A is according to the present invention, forms the end view of window in the side of lead frame.
Fig. 7 B is according to the present invention, after transparency window is attached to lead frame, forms the end view of aperture in the lead frame side.
Fig. 3 and 4 expressions are according to semiconductor packages of the present invention.As shown therein, ceramic mould semiconductor packages of the present invention starts from the tube core (not shown) of 12 to regulations of potsherd that step-like bending is provided.And, on the 2a of the top of this potsherd 12, prepare potsherd sealant 16, again lead frame 14 is fixed in the top 12a of the potsherd 12 that has potsherd sealant 16.In addition, the lead 14a of lead frame 14 is crooked.About this point, relevant therewith reason with to relevant Fig. 6 A and 6B and Fig. 7 A and 7B, illustrates in the process that transparency window adheres to be illustrated.
Simultaneously, at high temperature, potsherd 12 and lead frame 14 are heat-treated, make ceramic sealant 6 fusings, and can reach the desired seal effect at potsherd 12 and 14 of lead frames.After this, as shown in Figure 3, certain thickness tube core sealant 13 is coated to semiconductor packages potsherd 12 middle parts of sealing.After semiconductor chip 11 is fixed in the top of tube core sealant 13, tube core sealant 13 is done heat treatment again.Just, as shown in Figure 5, this semiconductor chip 11 is positioned the middle part of potsherd 12.
With metal wire 17, the pad of semiconductor chip 11 and lead frame 14 electricity are engaged.As Fig. 3 and shown in Figure 5.In addition, the transparency window 20 that will have a transparency window sealant 16 is configured on the surface in the centre that lead frame 14 and ceramic sealant 16 be positioned at, and at high temperature does heat treatment, so that transparency window 20 is fixed on it.Here, when configuration lead frame 14 and transparency window 20 have same widths, be easy to sealing.Behind sealing semiconductor chips 11, repair this lead frame 14, and encapsulation is tested, thereby finish this semiconductor packages.
Referring now to Fig. 6 A and 6B and Fig. 7 A and 7B, characteristics of the present invention are described.
At first, as shown in Figure 6A, when the transparency window 20 with transparent sealant 17 at the lead 14a place (referring to Fig. 4) of lead frame 14 when being fixed, because the lead 14a of lead frame 14 upper end has formed the transparency window sealant 7 of angle of turn and bending sections 14b and this lead of cross-over connection 14a (referring to Fig. 4), so form many from the inner outwards aperture of exhaust of semiconductor packages.Emit air in the semiconductor packages along the direction of arrow, as shown in Figure 6A.
Simultaneously, according to the present invention, the transparency window attaching behind this lead frame, Fig. 6 B has expressed the aperture that is formed at lead frame top.As shown therein, to the transparent sealant of forming by epoxy resin 17 heat-treat and attaching in the lead 14a of lead frame 14.Here, when in semiconductor packages, finishing air when discharging to its outside, just with transparent sealant 17 packings the aperture 23 of Fig. 6 A.Therefore, packaging part inside becomes vacuum state.
The aperture that forms in the lead frame side according to the present invention is represented among sharp Fig. 7 A.As shown therein, between the lead frame 14 and transparent sealant 17 of potsherd sealant 16, formed a plurality of or air void 23a in attaching.That is, owing to 17 cross-over connections of transparency window sealant form air void 23a in the potsherd sealant 16 of the lead frame 16 that separates at interval, as shown therein.At this, these air voids are at inner to its outside air-out from encapsulating.This air is discharged and is derived along the direction of arrow.The big I of air void 23a is controlled by the configuration relation that changes transparency window sealant 17 and potsherd sealant 16.
Fig. 7 B shows according to the present invention, with the transparency window attaching behind lead frame, be formed at the hole of lead frame side.As shown therein, to the transparency window sealant 17 formed by epoxy resin with by the potsherd sealant that expoxy glass is formed, at high temperature heat-treat, melt and be attached to upper and lower two surfaces of lead frame 14 leads.At this moment, in case make the air in the encapsulation be discharged to its outside, just with transparent sealant 17 fillings the air void 23a shown in Fig. 7 A, thereby the inner maintenance of semiconductor packages vacuum state.
As mentioned above, semiconductor packages and the manufacture method thereof that has transparency window according to the present invention is intended to reduce the expense of material, because utilize ceramic sealant so that sealed transparent window and pottery last slice.
In addition, the present invention also by the sealing surfaces area of broadening transparency window, lead frame and potsherd sealant, is intended to improve sealing effectiveness, thereby strengthens the blocks moisture and the high-temperature resistance of product.
Though disclosed most preferred embodiment of the present invention for convenience of explanation, the skill of this area is stated personnel and should be known that various improvement, interpolation and replacement all are feasible, does not break away from as described scope of the present invention of appended claims book and design and do not make.

Claims (5)

1. semiconductor packages that has transparent window comprises:
A semiconductor chip;
A potsherd that is used to install described semiconductor chip;
Lead frame by described potsherd sealing, described lead frame angulation is also crooked;
A transparency window that is fixed in the top of described lead frame; And
A kind of sealant that disposes at the place, side of described potsherd and described transparency window.
2. encapsulation as claimed in claim 1, wherein, for easier sealing, the described lead frame of being purchased has identical width with described transparency window.
3. manufacture method that has the semiconductor packages of transparent window comprises:
Purchase the 1st step of a step-like crooked potsherd;
The 2nd step at described potsherd top configuration potsherd sealant;
A lead frame is fixed on the 3rd step on described potsherd sealant top;
At high temperature, the 4th step of described potsherd of heat treatment and described lead frame;
The tube core sealant is coated on the 5th step of described potsherd;
The semiconductor chip is fixed on the 6th step on the tube core sealant;
The 7th step with the lead of metal wire electricity bond semiconductor bonding pads and lead frame;
The transparency window that will have the transparency window sealant is fixed in the 8th step of lead frame;
At high temperature, the 9th step that lead frame and transparency window are heat-treated; And
The 10th step of finishing lead frame.
4. method as claimed in claim 3, wherein said the 8th step are to be target so that the transparency window with transparent sealant is fixed in lead frame, discharge wherein air by a plurality of air voids simultaneously, because this lead frame is angulation and bending.
5. method as claimed in claim 4, the big I of wherein said air void is controlled by the width that changes transparent sealant and potsherd sealant.
CN96109668A 1995-10-19 1996-09-06 Semiconductor packaging with transparent window and its producing method Expired - Fee Related CN1061174C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019950036167A KR100201384B1 (en) 1995-10-19 1995-10-19 Semiconductor package having a transparency lid
KR36167/95 1995-10-19
KR36167/1995 1995-10-19

Publications (2)

Publication Number Publication Date
CN1149765A true CN1149765A (en) 1997-05-14
CN1061174C CN1061174C (en) 2001-01-24

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Application Number Title Priority Date Filing Date
CN96109668A Expired - Fee Related CN1061174C (en) 1995-10-19 1996-09-06 Semiconductor packaging with transparent window and its producing method

Country Status (3)

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JP (1) JP2813873B2 (en)
KR (1) KR100201384B1 (en)
CN (1) CN1061174C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1091299C (en) * 1998-02-27 2002-09-18 日本电气株式会社 Semiconductor device containing semiconductor element in package
CN101432871A (en) * 2006-04-28 2009-05-13 艾利森电话股份有限公司 A microwave chip supporting structure
CN102842557A (en) * 2011-06-20 2012-12-26 乾坤科技股份有限公司 Stack frame and method to fabricate thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100373699B1 (en) * 2000-08-04 2003-02-26 에쓰에쓰아이 주식회사 Method of making an air tight cavity in an assembly package for semi-conductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69006609T2 (en) * 1989-03-15 1994-06-30 Ngk Insulators Ltd Ceramic lid for closing a semiconductor element and method for closing a semiconductor element in a ceramic package.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1091299C (en) * 1998-02-27 2002-09-18 日本电气株式会社 Semiconductor device containing semiconductor element in package
CN101432871A (en) * 2006-04-28 2009-05-13 艾利森电话股份有限公司 A microwave chip supporting structure
CN102842557A (en) * 2011-06-20 2012-12-26 乾坤科技股份有限公司 Stack frame and method to fabricate thereof
CN102842557B (en) * 2011-06-20 2016-06-01 乾坤科技股份有限公司 A kind of encapsulation structure and manufacture method thereof

Also Published As

Publication number Publication date
KR970024033A (en) 1997-05-30
CN1061174C (en) 2001-01-24
JPH09181096A (en) 1997-07-11
KR100201384B1 (en) 1999-06-15
JP2813873B2 (en) 1998-10-22

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