CN114975655A - 一种锑基纳米棒阵列异质结的光电探测器及其制备方法 - Google Patents

一种锑基纳米棒阵列异质结的光电探测器及其制备方法 Download PDF

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CN114975655A
CN114975655A CN202210535143.7A CN202210535143A CN114975655A CN 114975655 A CN114975655 A CN 114975655A CN 202210535143 A CN202210535143 A CN 202210535143A CN 114975655 A CN114975655 A CN 114975655A
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曹宇
曲鹏
周静
凌同
朱嘉伟
武颖
贺伟兰
张颉
韩林肖
张国辉
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Northeast Electric Power University
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Abstract

本发明一种锑基纳米棒阵列异质结的光电探测器，其包括：掺硼氧化锌透明导电玻璃衬底、锑基纳米棒阵列吸收层、空穴传输层和金属电极，采用ZnO:B透明导电玻璃衬底诱导技术，制备锑基纳米棒阵列中分子链与纳米棒生长取向一致，改善了载流子输运特性，增强了光电流响应；其制备方法为构建合理的锑基纳米棒阵列异质结结构，高度有序的锑基纳米棒阵列作为光吸收层，提高载流子输运特性，制备方法简单、成本低、制备器件性能高、具有较高的工业化应用价值。

Description

一种锑基纳米棒阵列异质结的光电探测器及其制备方法
技术领域
本发明涉及光电材料、光电探测器技术领域，具体涉及一种锑基纳米棒阵列异质结的光电探测器及其制备方法。
背景技术
近年来，光电探测器作为机器视觉、模式识别、无人驾驶等领域的关键光电元件，而受到广泛关注。随着成像技术的普及和高速发展，对具有宽谱域响应、高性能光电探测器的需求在不断加强。要求光电探测器实现高响应度、高探测率等性能的同时满足宽光谱响应，同时也要求制备材料无毒、成本低和可快速大规模制备等特点。锑基材料(Sb2S3、Sb2Se3、Sb2(S,Se)3)作为一种新型光伏吸收材料，禁带宽度为1.1–1.7eV，可以实现紫外-可见光-近红外的宽光谱吸收，同时还具有高吸收系数，原材料丰富，无毒，可满足工业生产中的大规模制备。
目前，虽然锑基材料作为光吸收材料，在光电导探测器和薄膜异质结光电探测器上已有应用，但光电导探测器需要在固定偏压下工作，而薄膜异质结光电探测器可以实现器件在无偏压下工作。进一步提升锑基材料性能，需要优化锑基吸光层生长取向，提高光电流响应，但此项技术尚未攻克，在相关文献上也没有任何记载。
发明内容
本发明针对现有技术存在的问题，设计了一种锑基纳米棒阵列异质结的光电探测器，构建合理的锑基纳米棒阵列异质结结构，高度有序的锑基纳米棒阵列作为光吸收层，可以提高载流子输运特性，提高光电探测器性能；同时提供了一种锑基纳米棒阵列异质结的光电探测器的制备方法，该制备方法简单，适用于工业化大规模生成。
实现本发明技术方案之一，一种锑基纳米棒阵列异质结的光电探测器，其特征是，它从上而下依次排列以下结构：掺硼氧化锌透明导电玻璃衬底，锑基纳米棒阵列吸收层，空穴传输层，金属电极层。
进一步，所述的锑基纳米棒阵列吸收层是Sb2S3纳米棒阵列吸收层、Sb2Se3纳米棒阵列吸收层或Sb2(S,Se)3纳米棒阵列吸收层。
进一步，所述的空穴传输层是P3HT、MoO3或Spiro-OMeTAD。
进一步，所述的金属电极层是Au、Ag或Al薄膜。
实现本发明技术方案之二，一种锑基纳米棒阵列异质结的光电探测器的制备方法，其特征是，它包括以下步骤：
1)对掺硼氧化锌透明导电玻璃衬底用洗洁精和纯水洗涤15分钟，然后依次用超纯水、乙醇、丙酮超声洗涤15分钟，用氮气吹干；
2)将步骤1)洁净后的掺硼氧化锌透明导电玻璃衬底放置于近空间升华系统设备中，真空压力为0.1～5pa，蒸发源重量为0.2～4g，所述蒸发源是Sb2S3、Sb2Se3或Sb2(S,Se)3，所述掺硼氧化锌透明导电玻璃衬底与蒸发源距离调整为5～20mm，所述掺硼氧化锌透明导电玻璃衬底温度调整为200～350℃，所述蒸发源的温度升至为150～400℃保持5-30min，当所述蒸发源的温度升至450～600℃时，开启衬底挡板，持续蒸发10～120s，沉积结束后，自然冷却至室温取出，得到锑基纳米棒阵列异质结；
3)在步骤2)中所述锑基纳米棒阵列异质结下部制备空穴传输层薄膜，所述的空穴传输层是P3HT、MoO3或Spiro-OMeTAD；
4)将步骤3)中制备空穴传输层薄膜后的锑基纳米棒阵列异质结，放置在蒸镀设备中，将所述蒸镀设备抽至真空后，蒸镀金属电极层，所述的金属电极层是Au、Ag或Al薄膜，所述蒸镀金属电极层蒸镀完毕后，得到锑基纳米棒阵列异质结的光电探测器。
进一步，在制备方法步骤2)中，所述Sb2S3纳米棒阵列厚度为200nm、Sb2Se3纳米棒阵列厚度为1500nm或Sb2(S,Se)3纳米棒阵列厚度为2000nm。
进一步，在制备方法步骤3)中，当所述空穴传输层是MoO3时，制备方法选用蒸镀法，将所述锑基纳米棒阵列异质结放在蒸镀设备中，将所述蒸镀设备抽至真空后，用蒸镀法蒸镀空穴传输层薄膜。
进一步，在制备方法步骤3)中，当所述空穴传输层是P3HT或Spiro-OMeTAD时，制备方法选用旋涂法，将所述锑基纳米棒阵列异质结放在旋涂仪中，用旋涂法旋涂空穴传输层薄膜。
进一步，在制备方法步骤3)中，所述P3HT薄膜厚度为120nm、MoO3薄膜厚度为3nm或Spiro-OMeTAD薄膜厚度为300nm。
进一步，在制备方法步骤4)中，所述Au电极厚度为60nm、Ag电极厚度为120nm或Al电极厚度为200nm。
本发明一种锑基纳米棒阵列异质结的光电探测器及其制备方法有益效果体现在：
1、一种锑基纳米棒阵列异质结的光电探测器，开发了一种锑基纳米棒阵列作为光吸收层，通过ZnO:B透明导电玻璃衬底诱导技术组成新型锑基纳米棒阵列异质结结构，使用锑基纳米棒阵列异质结制备的光电探测器具有高光电流响应，同时可以实现宽光谱响应；
2、一种锑基纳米棒阵列异质结的光电探测器的制备方法，应用锑基纳米棒阵列异质结构的光电探测器具有高器件性能、宽光谱响应范围等优点，制备方法简单、快速，原材料丰富、成本低，制备器件性能高，具有较高的工业化应用价值。
附图说明
图1是在实施例1中，ZnO:B/Sb2S3纳米棒阵列异质结光电探测器结构示意图；
图2是在实施例2中，ZnO:B/Sb2Se3纳米棒阵列异质结光电探测器结构示意图；
图3是在实施例3中，ZnO:B/Sb2(S,Se)3纳米棒阵列异质结光电探测器结构示意图；
图4是ZnO:B/锑基纳米棒阵列异质结SEM界面图；
图5是锑基纳米棒TEM照片：(a)纳米棒形貌图；(b)纳米棒HRTEM图；(c)纳米棒选取电子衍射图；
图6是锑基纳米棒阵列光电探测器、锑基薄膜光电探测器在460nm、625nm、930nm光下的光电流响应。
具体实施方式
以下结合附图1—6和具体实施例对本发明作进一步详细说明，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
实施例1：
如附图1所示，ZnO:B/Sb2S3纳米棒阵列异质结光电探测器结构示意图，ZnO:B/Sb2S3纳米棒阵列异质结光电探测器从下至上依次排列：ZnO:B透明导电玻璃、Sb2S3纳米棒阵列吸收层、P3HT空穴传输层、Au电极。
一种ZnO:B/Sb2S3纳米棒阵列异质结光电探测器的制备方法，器包括以下步骤：
(1)将ZnO:B透明导电玻璃用洗洁精、纯水洗去表面污染物，之后将ZnO:B透明导电玻璃分别用超纯水、乙醇、丙酮等进行15min的超声清洗，清洗后用氮气吹干，得到表面干净的ZnO:B衬底；
(2)称取0.2g的Sb2S3粉末作为蒸发源，调节蒸发源与衬底间距为5mm，调节设备气压为0.1pa，控制衬底温度为200℃，蒸发源温度为150℃保持20min，调节蒸发源温度以最大功率从150℃升温，蒸发源到450℃开启衬底挡板，蒸发10s，经过自然冷却后制备得到200nm厚的Sb2S3纳米棒阵列，形成ZnO:B/Sb2S3纳米棒阵列异质结结构；
(3)称取0.035g P3HT溶于2ml二氯代苯，50℃搅拌一小时以上，得到P3HT有机溶液。
(4)将步骤(2)中得到的ZnO:B/Sb2S3纳米棒阵列异质结样品放置旋涂仪中，旋涂步骤(3)中配好的P3HT样品，获得120nm厚P3HT空穴传输层。
(5)将步骤(4)中得到的涂有P3HT空穴传输层的样品放置在蒸镀设备中，将设备真空调至10-1Pa，蒸镀60nm的Au电极，得到ZnO:B/Sb2S3纳米棒阵列异质结光电探测器。
实施例2：
如附图2所示，ZnO:B/Sb2Se3纳米棒阵列异质结光电探测器结构示意图，ZnO:B/Sb2Se3纳米棒阵列异质结光电探测器从下至上依次排列：ZnO:B透明导电玻璃、Sb2Se3纳米棒阵列吸收层、MoO3空穴传输层、Ag电极。
一种ZnO:B/Sb2Se3纳米棒阵列异质结光电探测器的制备方法，其包括以下步骤：
(1)将ZnO:B透明导电玻璃用洗洁精、纯水洗去表面污染物，之后将ZnO:B透明导电玻璃分别用超纯水、乙醇、丙酮等进行10min的超声清洗，清洗后用氮气吹干，得到表面干净的ZnO:B衬底；
(2)称取2g的Sb2Se3粉末作为蒸发源，调节蒸发源与衬底间距为15mm，调节设备气压为1pa，控制衬底温度为300℃，蒸发源温度为350℃保持20min，调节蒸发源温度以最大功率从350℃升温，蒸发源到500℃开启衬底挡板，蒸发70s，经过自然冷却后制备得到1800nm厚的Sb2Se3纳米棒阵列，形成ZnO:B/Sb2Se3纳米棒阵列异质结结构；
(3)将步骤(2)中得到的ZnO:B/Sb2Se3纳米棒阵列异质结样品放置蒸镀设备中，将设备真空调至10-2Pa，蒸镀3nm厚MoO3空穴传输层；
(4)将步骤(3)中得到的蒸有MoO3空穴传输层的样品放置在蒸镀设备中，将设备真空调至10-3Pa，蒸镀120nm的Ag电极，得到ZnO:B/Sb2Se3纳米棒阵列异质结光电探测器。
实施例3：
如附图3所示，ZnO:B/Sb2(S,Se)3纳米棒阵列异质结光电探测器结构示意图，ZnO:B/Sb2(S,Se)3纳米棒阵列异质结光电探测器从下至上依次排列：ZnO:B透明导电玻璃、Sb2(S,Se)3纳米棒阵列吸收层、Spiro-OMeTAD空穴传输层、Al电极。
一种ZnO:B/Sb2(S,Se)3纳米棒阵列异质结光电探测器的制备方法，其包括以下步骤：
(1)将ZnO:B透明导电玻璃用洗洁精、纯水洗去表面污染物，之后将ZnO:B透明导电玻璃分别用超纯水、乙醇、丙酮等进行15min的超声清洗，清洗后用氮气吹干，得到表面干净的ZnO:B衬底；
(2)称取4g的Sb2(S,Se)3粉末作为蒸发源，调节蒸发源与衬底间距为20mm，调节设备气压为5pa，控制衬底温度为400℃，蒸发源温度为400℃保持30min，调节蒸发源温度以最大功率从600℃升温，蒸发源到600℃开启衬底挡板，蒸发120s，经过自然冷却后制备得到2000nm厚的Sb2(S,Se)3纳米棒阵列，形成ZnO:B/Sb2(S,Se)3纳米棒阵列异质结结构；
(3)使用1ml氯苯作为溶剂，溶解称好的36.6mg Spiro-OMeTAD粉末，依次加入14.4μL4-叔丁基吡啶和18.8μL二(三氟甲基磺酸酰)亚胺锂的乙腈溶液，获得Spiro-OMeTAD有机溶剂；
(4)将步骤(2)中得到的ZnO:B/Sb2(S,Se)3纳米棒阵列异质结样品放置旋涂仪中，旋涂步骤(3)中配好的Spiro-OMeTAD样品，获得300nm厚Spiro-OMeTAD空穴传输层；
(5)将步骤(4)中得到的涂有P3HT空穴传输层的样品放置在蒸镀设备中，将设备真空调至10-3Pa，蒸镀200nm的Al电极，得到ZnO:B/Sb2(S,Se)3纳米棒阵列异质结光电探测器。
对实施例2进行了SEM表征。如附图4所示，制备得到了垂直于衬底形成有序的锑基纳米棒阵列结构。
选取实施例2，Sb2Se3纳米棒阵列中一根纳米棒进行TEM表征，选取的S纳米棒如图3所示。如附图5中b为选取的单根纳米棒HRTEM图片，图片显示出清晰的(002)晶格排列，说明了锑基分子链与纳米棒生长的一致性，分子链沿着纳米棒生长将提高吸收层的载流子输运特性，提高光电流响应。如附图5中c选区电子衍射图显示出同样的(002)晶格排列，验证了分子链与纳米棒生长一致，同时也证实了制备的锑基纳米棒接近于(002)择优的单晶。
如附图6所示，为锑基纳米棒阵列和锑基薄膜光电探测器在0V偏压，10mW/cm2光强，460、625、930nm入射光下的光响应曲线；可以看出Sb2Se3纳米棒阵列光电探测器在460-960nm范围内显示均显示出较高的光电流响应；较高的光电流响来源于分子链与纳米棒生长一致，产生高度有序的锑基纳米棒阵列，提高了载流子的载流子传输效率。
以上所述仅是本发明的优选方式，应当指出的是，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应该视为本发明的保护范围。

Claims (10)

1.一种锑基纳米棒阵列异质结的光电探测器，其特征是，它从上而下依次排列以下结构：掺硼氧化锌透明导电玻璃衬底，锑基纳米棒阵列吸收层，空穴传输层，金属电极层。
2.根据权利要求1所述的一种锑基纳米棒阵列异质结的光电探测器，其特征是，所述的锑基纳米棒阵列吸收层是Sb2S3纳米棒阵列吸收层、Sb2Se3纳米棒阵列吸收层或Sb2(S,Se)3纳米棒阵列吸收层。
3.根据权利要求1所述的一种锑基纳米棒阵列异质结的光电探测器，其特征是，所述的空穴传输层是P3HT、MoO3或Spiro-OMeTAD。
4.根据权利要求1所述的一种锑基纳米棒阵列异质结的光电探测器，其特征是，所述的金属电极层是Au、Ag或Al薄膜。
5.根据权利要求1所述的一种锑基纳米棒阵列异质结的光电探测器，其特征是，它的制备方法包括以下步骤：
1)对掺硼氧化锌透明导电玻璃衬底用洗洁精和纯水洗涤15分钟，然后依次用超纯水、乙醇、丙酮超声洗涤15分钟，用氮气吹干；
2)将步骤1)洁净后的掺硼氧化锌透明导电玻璃衬底放置于近空间升华系统设备中，真空压力为0.1～5pa，蒸发源重量为0.2～4g，所述蒸发源是Sb2S3、Sb2Se3或Sb2(S,Se)3，所述掺硼氧化锌透明导电玻璃衬底与蒸发源距离调整为5～20mm，所述掺硼氧化锌透明导电玻璃衬底温度调整为200～350℃，所述蒸发源的温度升至为150～400℃保持5-30min，当所述蒸发源的温度升至450～600℃时，开启衬底挡板，持续蒸发10～120s，沉积结束后，自然冷却至室温取出，得到锑基纳米棒阵列异质结；
3)在步骤2)中所述锑基纳米棒阵列异质结下部制备空穴传输层薄膜，所述的空穴传输层是P3HT、MoO3或Spiro-OMeTAD；
4)将步骤3)中制备空穴传输层薄膜后的锑基纳米棒阵列异质结，放置在蒸镀设备中，将所述蒸镀设备抽至真空后，蒸镀金属电极层，所述的金属电极层是Au、Ag或Al薄膜，所述蒸镀金属电极层蒸镀完毕后，得到锑基纳米棒阵列异质结的光电探测器。
6.根据权利要求5所述的一种锑基纳米棒阵列异质结的光电探测器，其特征是，在制备方法步骤2)中，所述Sb2S3纳米棒阵列厚度为200nm、Sb2Se3纳米棒阵列厚度为1500nm或Sb2(S,Se)3纳米棒阵列厚度为2000nm。
7.根据权利要求5所述的一种锑基纳米棒阵列异质结的光电探测器，其特征是，在制备方法步骤3)中，当所述空穴传输层是MoO3时，制备方法选用蒸镀法，将所述锑基纳米棒阵列异质结放在蒸镀设备中，将所述蒸镀设备抽至真空后，用蒸镀法蒸镀空穴传输层薄膜。
8.根据权利要求5所述的一种锑基纳米棒阵列异质结的光电探测器，其特征是，在制备方法步骤3)中，当所述空穴传输层是P3HT或Spiro-OMeTAD时，制备方法选用旋涂法，将所述锑基纳米棒阵列异质结放在旋涂仪中，用旋涂法旋涂空穴传输层薄膜。
9.根据权利要求5所述的一种锑基纳米棒阵列异质结的光电探测器，其特征是，在制备方法步骤3)中，所述P3HT薄膜厚度为120nm、MoO3薄膜厚度为3nm或Spiro-OMeTAD薄膜厚度为300nm。
10.根据权利要求5所述的一种锑基纳米棒阵列异质结的光电探测器，其特征是，在制备方法步骤4)中，所述Au电极厚度为60nm、Ag电极厚度为120nm或Al电极厚度为200nm。
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