CN114958281A - Preparation method of glue for bonding silicon crystal, bonding process and line cutting process - Google Patents
Preparation method of glue for bonding silicon crystal, bonding process and line cutting process Download PDFInfo
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- CN114958281A CN114958281A CN202110215613.7A CN202110215613A CN114958281A CN 114958281 A CN114958281 A CN 114958281A CN 202110215613 A CN202110215613 A CN 202110215613A CN 114958281 A CN114958281 A CN 114958281A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
- C09J175/04—Polyurethanes
- C09J175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/36—Hydroxylated esters of higher fatty acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/4009—Two or more macromolecular compounds not provided for in one single group of groups C08G18/42 - C08G18/64
- C08G18/4045—Mixtures of compounds of group C08G18/58 with other macromolecular compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/42—Polycondensates having carboxylic or carbonic ester groups in the main chain
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/58—Epoxy resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
- C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
- C08G18/6629—Compounds of groups C08G18/42, C08G18/48, or C08G18/52 with compounds of group C08G18/36 or hydroxylated esters of higher fatty acids of C08G18/38
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides a preparation method of glue for bonding silicon crystals, which comprises the following steps: s1: analyzing the first component slurry and the second component slurry; s2: mixing and configuring the resolved first component slurry and the resolved second component slurry; s3: and stirring the mixed first component slurry and the second component slurry to prepare the required glue. The glue provided by the invention has good hardness and high shearing force, the highest hardness is 92HD, and the shearing force can reach 16-18 KN/mm; the adhesive can improve the bonding strength of the silicon crystal and reduce the wafer dropping rate by about 10 percent. The invention also provides a bonding process of the glue to the silicon crystal and a line cutting process of the silicon crystal, which can effectively reduce the conditions of chip falling, self-damage and edge breakage of the silicon chip caused by the performance of the glue.
Description
Technical Field
The invention belongs to the technical field of solar silicon wafer bonding, and particularly relates to a preparation method of glue for bonding silicon crystals, a bonding process and a line cutting process.
Background
The preparation method of the glue directly influences the bonding strength and the shearing force of the silicon wafer, particularly the hardness after curing in unit time, and in the existing silicon crystal cutting process, particularly in the ending stage, coiling easily occurs when a diamond wire is cut to the position of an adhesive surface, and the silicon wafer self-damage is serious because the silicon wafer frequently falls off during blanking, and even the edge breakage of the cut silicon wafer on the adhesive surface is serious.
Disclosure of Invention
The invention provides a glue preparation method, a bonding process and a line cutting process for bonding silicon crystals, which solve the technical problem that in the prior art, the silicon crystals are easy to fall off in the cutting process.
In order to solve the technical problems, the invention adopts the technical scheme that:
a preparation method of glue for bonding silicon crystals comprises the following steps:
s1: resolving the first component slurry and the second component slurry;
s2: mixing and configuring the resolved first component slurry and the resolved second component slurry;
s3: and stirring the mixed first component slurry and the second component slurry to prepare the required glue.
Further, the step of S1 specifically includes:
s11: firstly, respectively taking a proper amount of the first component slurry and a proper amount of the second component slurry;
s12: respectively putting the first component slurry and the second component slurry into independently arranged water bath barrels for analysis; the resolving temperature of the first component slurry and the second component slurry is 60-70 ℃, and the resolving time is 30-40 min.
Further, the first component slurry and the second component slurry are analyzed in a synchronous water bath.
Further, the step of S2 specifically includes:
s21: respectively moving the resolved first component slurry and the resolved second component slurry to a first temporary storage barrel and a second temporary storage barrel;
s22: and controlling the mass ratio of the first component slurry to the second component slurry to be 2: the mixture in the proportion of 1 flows into a dispensing tube to be mixed.
Further, the step S3 specifically includes stirring the first component slurry and the second component slurry in the dispensing cylinder to form the glue.
Further, the first component slurry comprises an epoxy resin containing an active hydrogen component, and a molecular chain of the epoxy resin contains a carbamate group; the second component slurry includes a curing agent containing urethane groups or isocyanate groups.
A silicon crystal bonding process adopts the glue for bonding, the steps include controlling the pressure of a glue dispensing pipe used for stirring the first component slurry and the second component slurry at the temperature of 25 +/-5 ℃ to control the glue to be coated on a material plate, and the pressure of the glue dispensing pipe is not more than 0.6 MPa.
Further, the dispensing time of each silicon crystal is not more than 5 min; the thickness of a glue layer formed by the glue is 0.4-0.6 mm.
Further, the positioning of the silicon crystal is completed within 15min after the glue dispensing is completed; and the curing time of the silicon crystals is 2 hours.
A silicon crystal wire cutting process is used for the silicon crystal as described in any one of the above, and when a diamond wire is cut to be close to a glue layer, the wire speed of the diamond wire is 40-35 m/s; the flow rate of the cooling liquid is 240-250L/min, and the temperature of the cooling liquid is 18 +/-2 ℃.
The preparation method of the glue for bonding the silicon crystal has the advantages that the glue is good in hardness and high in shearing force, the highest hardness is 92HD, and the shearing force can reach 16-18 KN/mm; the adhesive can improve the bonding strength of the silicon crystal, reduce the wafer dropping rate by about 10 percent and reduce the self-loss of the silicon wafer by 3 percent. The invention also provides a bonding process of the silicon crystal by adopting the glue and a linear cutting process of the silicon crystal, and particularly provides a diamond linear cutting speed, a cooling liquid flow and a cooling liquid temperature which are matched with the glue when the silicon crystal is taken down, so that the cutting quality of the silicon crystal when the silicon crystal is taken down can be ensured, the problem of edge breakage of the silicon wafer can be reduced to the maximum extent, and the edge breakage rate of the silicon wafer is reduced by nearly 1%.
Drawings
FIG. 1 is a flow chart of a method for preparing a glue for bonding a silicon crystal according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of glue preparation according to an embodiment of the present invention.
In the figure:
10. a first water bath barrel 20, a second water bath barrel 30 and a first temporary storage barrel
40. A second temporary storage barrel 50, a dispensing tube 51 and an upper section part
52. Lower section 53, stirring core
Detailed Description
The invention is described in detail below with reference to the figures and the specific embodiments.
The embodiment provides a method for preparing glue for bonding silicon crystals, which comprises the following steps as shown in fig. 1 and fig. 2:
s1: and resolving the first component slurry and the second component slurry.
S11: firstly, respectively taking a proper amount of first component slurry and a proper amount of second component slurry.
Specifically, an appropriate amount of a first component slurry and an appropriate amount of a second component slurry are respectively taken, in this embodiment, the glue includes the first component slurry and the second component slurry, where the first component slurry includes an epoxy resin containing an active hydrogen component, and a molecular chain of the epoxy resin contains a carbamate group. The second component slurry comprises a curing agent containing urethane or isocyanate groups, which is obtained by reacting an isocyanate and a hydroxyl-containing compound such as a polyester, polyether, castor oil or other polyol. The raw materials of the first component slurry and the second component slurry are separately stored and are separately placed in different appliances, the appliances can be glue barrels or glass cups, and once the glue barrels are not used immediately, flocculation and coagulation are generated, so that the glue barrels and the glass cups need to be subjected to resolution treatment in warm water to completely resolve and suspend the glue barrels and the glass cups.
S12: and respectively carrying out water bath analysis on the first component slurry and the second component slurry.
Specifically, separately stored first component slurry and second component slurry are transferred from the inside of the appliance into the first water bath tub 10 and the second water bath tub 20, which are separately provided; the first water bath barrel 10 for containing the first component slurry and the second water bath barrel 20 for containing the second component slurry are both placed in a water bath with the temperature of 60-70 ℃ for standing for a period of time, so that the flocculated and coagulated first component slurry and the flocculated and coagulated second component slurry can be completely resolved.
Preferably, the time for resolving the first component slurry and the second component slurry in the water bath in the step is 30-40 min.
In order to ensure the uniformity of the first component slurry and the second component slurry and avoid bubbles from being mixed into the slurry in the resolving process, the first water bath barrel 10 for bearing the first component slurry and the second water bath barrel 20 for bearing the second component slurry are both placed stably in a standing mode.
S2: and mixing and configuring the resolved first component slurry and the resolved second component slurry.
S21: the first component slurry and the second component slurry after the warm water is resolved are respectively moved to a first temporary storage barrel 30 and a second temporary storage barrel 40.
Specifically, the first component slurry in the first water bath barrel 10 and the second component slurry in the second water bath barrel 20 can be respectively connected and transferred to the first temporary storage barrel 30 and the second temporary storage barrel 40 through the connecting pipe, that is, the first water bath barrel 10 loaded with the first component slurry is directly communicated with the first temporary storage barrel 30 through the connecting pipe, and the second water bath barrel 20 loaded with the second component slurry is connected with the second temporary storage barrel 40 through the connecting pipe, so that the first component slurry and the second component slurry are mixed and dispensed in the next step, and the first water bath barrel 10 and the second water bath barrel 20 in warm water are prevented from being difficult to control to flow out.
S22: and then controlling the mass ratio of the first component slurry to the second component slurry to be 2: the mixture in the proportion of 1 flows into the dispensing tube 50 to be stirred and mixed.
Specifically, an electric pump and an electromagnetic valve are provided at the outer sides of the first temporary storage bucket 30 and the second temporary storage bucket 40 to control the flow rate of the first component slurry flowing out of the first temporary storage bucket 30 and the second component slurry flowing out of the second temporary storage bucket 40, and since the cross-sectional area of the connection pipe is fixed, the quality of the slurry is controlled by the flow rate, so that the first component slurry and the second component slurry are controlled to be 2: 1 to the dispensing tube 50.
S3: and stirring the mixed first component slurry and the second component slurry to form the required glue.
Specifically, the dispensing tube 50 is configured as shown in fig. 2, and includes an upper section 51 having a straight cylindrical structure and a lower section 52 having an inverted conical structure, and a spiral stirring core 53 is further provided in the dispensing tube 50. The first component slurry flowing out of the first temporary storage barrel 30 and the second component slurry flowing out of the second temporary storage barrel 40 enter from the upper end face of the dispensing tube 50, the stirring core 53 arranged in the dispensing tube 50 continuously rotates in the same direction, so that the first component slurry and the second component slurry move downwards along with the rotation of the blades of the stirring core 53, the rotating mixing is ensured, meanwhile, the lower port of the dispensing tube 50 can move along with the rotation speed of the stirring core 53, meanwhile, an air pump is arranged outside the dispensing tube 50, the pressure in the dispensing tube 50 is controlled, and the mixed glue overflows downwards along with the pressure of the dispensing tube 50 for dispensing.
The hardness and shear properties of the glue obtained with the present formulation method are shown in table 1 below. As can be seen from Table 1, the second component slurry is a curing agent having a carbamate group or an isocyanate group, so that the first component slurry of the epoxy resin containing an active hydrogen component has strong adhesiveness, the two components are completely mixed and stirred to obtain a glue with strong hardness and shearing force, the viscosity of the glue is 57.8 at 25 +/-0.5 ℃, the room temperature density is 1.45, the Shore hardness value is 92, and the shearing stress can reach 16MPa after being tested by a universal tester GB/T7124. The hardness of the glue in the prior art is only 80HD and the shearing stress is only 12 MPa. The hardness and shear stress of the glue obtained by the configuration process described in the embodiment are respectively improved by nearly 15% and 33% compared with the prior art.
TABLE 1 glue Performance results
A silicon crystal bonding process adopts the glue configured as above to bond, and comprises the following steps:
after the glue is prepared, the pressure inside the glue dispensing tube 50 is controlled at the temperature of 25 +/-5 ℃ to control the glue to be applied to the material plate, and the pressure of the glue dispensing tube 50 is not more than 0.6 MPa. If the pressure is too large, the glue layer formed by coating the glue on the material plate is too thin, and the bonding effect cannot be achieved.
In the embodiment, the dispensing time of each silicon crystal is not more than 5 min; the thickness of the glue layer formed by the glue is 0.4-0.6 mm.
And finishing the positioning setting of the silicon crystal within 15min after the glue dispensing is finished, wherein the curing time of the silicon crystal after the glue dispensing is 2 h.
A silicon crystal wire cutting process is used for silicon crystals bonded by glue water, and when a diamond wire is cut to be close to a glue layer, the linear speed of the diamond wire is 40-35 m/s; the flow rate of the cooling liquid is 240-250L/min, and the temperature of the flow rate of the cooling liquid is 18 +/-2 ℃.
The preparation method of the glue for bonding the silicon crystal has the advantages that the glue is good in hardness and high in shearing force, the highest hardness is 92HD, and the shearing force can reach 16-18 KN/mm; the adhesive can improve the bonding strength of the silicon crystal, reduce the wafer dropping rate by about 10 percent and reduce the self-loss of the silicon wafer by 3 percent. The invention also provides a bonding process of the glue to the silicon crystal and a linear cutting process of the silicon crystal, in particular to a diamond linear cutting speed, a cooling liquid flow and a cooling liquid temperature which are matched with the glue when the silicon crystal is taken back, so that the cutting quality of the silicon crystal when the silicon crystal is taken back can be ensured, the problem of edge breakage of the silicon wafer can be reduced to the greatest extent, and the edge breakage rate of the silicon wafer is reduced by nearly 1%.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A preparation method of glue for bonding silicon crystals is characterized by comprising the following steps:
s1: analyzing the first component slurry and the second component slurry;
s2: mixing and configuring the resolved first component slurry and the resolved second component slurry;
s3: and stirring the mixed first component slurry and the second component slurry to prepare the required glue.
2. The method as claimed in claim 1, wherein the step S1 comprises:
s11: firstly, respectively taking a proper amount of the first component slurry and a proper amount of the second component slurry;
s12: respectively putting the first component slurry and the second component slurry into independently arranged water bath barrels for analysis; the resolving temperature of the first component slurry and the second component slurry is 60-70 ℃, and the resolving time is 30-40 min.
3. The method as claimed in claim 2, wherein the first component slurry and the second component slurry are resolved in a synchronous water bath.
4. The method as claimed in any one of claims 1 to 3, wherein the step S2 comprises:
s21: respectively moving the resolved first component slurry and the resolved second component slurry to a first temporary storage barrel and a second temporary storage barrel;
s22: and controlling the mass ratio of the first component slurry to the second component slurry to be 2: the mixture in the proportion of 1 flows into a dispensing tube to be mixed.
5. The method as claimed in claim 4, wherein said step S3 comprises stirring said first component slurry and said second component slurry in said dispensing cylinder to form said glue.
6. The method of any one of claims 1-3, 5, wherein the first component slurry comprises an epoxy resin containing an active hydrogen component, which contains urethane groups in its molecular chain; the second component slurry includes a curing agent containing urethane groups or isocyanate groups.
7. A silicon crystal bonding process, characterized in that the bonding is carried out by using the glue according to any one of claims 1 to 6, and the bonding process comprises the step of controlling the pressure of a glue dispensing pipe used for stirring the first component slurry and the second component slurry at the temperature of 25 +/-5 ℃ so as to control the glue to be coated on a material plate, wherein the pressure of the glue dispensing pipe is not more than 0.6 MPa.
8. The silicon crystal bonding process according to claim 7, wherein the dispensing time of each silicon crystal is not more than 5 min; the thickness of a glue layer formed by the glue is 0.4-0.6 mm.
9. The silicon crystal bonding process according to claim 8, wherein the positioning of the silicon crystal is completed within 15min after the glue dispensing; and the curing time of the silicon crystals is 2 hours.
10. A silicon crystal wirecutting process for silicon crystal according to any one of claims 7 to 9, wherein the wire speed of the diamond wire is 40 to 35m/s when the diamond wire is cut close to the glue layer; the flow rate of the cooling liquid is 240-250L/min, and the temperature of the cooling liquid is 18 +/-2 ℃.
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| CN202110215613.7A CN114958281A (en) | 2021-02-26 | 2021-02-26 | Preparation method of glue for bonding silicon crystal, bonding process and line cutting process |
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| CN202110215613.7A CN114958281A (en) | 2021-02-26 | 2021-02-26 | Preparation method of glue for bonding silicon crystal, bonding process and line cutting process |
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| CN109351552A (en) * | 2018-11-12 | 2019-02-19 | 欣辰卓锐（苏州）智能装备有限公司 | A kind of AB glue glue dispensing valve and dispenser |
| CN109880567A (en) * | 2019-03-26 | 2019-06-14 | 南宁珀源能源材料有限公司 | Diamond wire silicon is sliced bar glue and preparation method |
| CN110437779A (en) * | 2019-07-31 | 2019-11-12 | 南宁珀源能源材料有限公司 | Bar glue and preparation method thereof for thin slice filament SiClx slice |
| CN210473754U (en) * | 2019-08-13 | 2020-05-08 | 安徽晶天新能源科技有限责任公司 | Electrodynamic type silicon block bonds with joining in marriage mucilage binding and puts |
| CN111992427A (en) * | 2020-07-27 | 2020-11-27 | 德清鼎兴电子有限公司 | Bi-component precipitation-preventing self-cleaning glue dispenser |
| CN112048273A (en) * | 2020-09-18 | 2020-12-08 | 浙江伟星实业发展股份有限公司 | Environment-friendly glue and preparation method and application thereof |
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