CN114931382A - 复合脑电电极及其制备方法、脑电帽、设备 - Google Patents
复合脑电电极及其制备方法、脑电帽、设备 Download PDFInfo
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03188365A (ja) * | 1989-12-19 | 1991-08-16 | Toshiba Corp | 塗膜測定用プローブ |
JPH0666622U (ja) * | 1993-02-25 | 1994-09-20 | 日本光電工業株式会社 | 生体用電極 |
US20140148887A1 (en) * | 2010-09-21 | 2014-05-29 | Koninklijke Philips Electronics N.V. | Electrode apparatus |
CN107802261A (zh) * | 2017-11-14 | 2018-03-16 | 复旦大学 | 干燥一次性柔性心电电极及其制备方法 |
CN109875554A (zh) * | 2019-02-26 | 2019-06-14 | 清华大学 | 柔性非嵌入式脑机接口电极及其制备方法和脑机接口模块 |
KR20190094010A (ko) * | 2018-02-02 | 2019-08-12 | 가천대학교 산학협력단 | 탄성 스폰지 구조를 이용한 신축성 가스센서 및 그 제조 방법 |
CN110556472A (zh) * | 2019-08-23 | 2019-12-10 | 太原理工大学 | 一种基于pdms材料的包覆型压力传感器及其制备方法 |
CN111945185A (zh) * | 2020-08-24 | 2020-11-17 | 中国石油化工股份有限公司 | 石墨烯气凝胶工作电极材料及其制备方法、石墨烯气凝胶工作电极及其制备方法和应用 |
CN112886304A (zh) * | 2021-01-08 | 2021-06-01 | 清华大学 | 柔性非嵌入式脑机接口半干电极及其制备方法和脑机接口模块 |
CN114190947A (zh) * | 2021-12-09 | 2022-03-18 | 上海交通大学 | 一种基于柔性基底的非侵入式脑电传感器及其制备方法 |
-
2022
- 2022-05-23 CN CN202210566486.XA patent/CN114931382B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03188365A (ja) * | 1989-12-19 | 1991-08-16 | Toshiba Corp | 塗膜測定用プローブ |
JPH0666622U (ja) * | 1993-02-25 | 1994-09-20 | 日本光電工業株式会社 | 生体用電極 |
US20140148887A1 (en) * | 2010-09-21 | 2014-05-29 | Koninklijke Philips Electronics N.V. | Electrode apparatus |
CN107802261A (zh) * | 2017-11-14 | 2018-03-16 | 复旦大学 | 干燥一次性柔性心电电极及其制备方法 |
KR20190094010A (ko) * | 2018-02-02 | 2019-08-12 | 가천대학교 산학협력단 | 탄성 스폰지 구조를 이용한 신축성 가스센서 및 그 제조 방법 |
CN109875554A (zh) * | 2019-02-26 | 2019-06-14 | 清华大学 | 柔性非嵌入式脑机接口电极及其制备方法和脑机接口模块 |
CN110556472A (zh) * | 2019-08-23 | 2019-12-10 | 太原理工大学 | 一种基于pdms材料的包覆型压力传感器及其制备方法 |
CN111945185A (zh) * | 2020-08-24 | 2020-11-17 | 中国石油化工股份有限公司 | 石墨烯气凝胶工作电极材料及其制备方法、石墨烯气凝胶工作电极及其制备方法和应用 |
CN112886304A (zh) * | 2021-01-08 | 2021-06-01 | 清华大学 | 柔性非嵌入式脑机接口半干电极及其制备方法和脑机接口模块 |
CN114190947A (zh) * | 2021-12-09 | 2022-03-18 | 上海交通大学 | 一种基于柔性基底的非侵入式脑电传感器及其制备方法 |
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Effective date of registration: 20230829 Address after: Room 16, 6th Floor, Block B, Building 10, Yangtze River Delta International R&D Community Launch Zone, No. 286 Qinglonggang Road, High Speed Rail New City, Suzhou City, Jiangsu Province, 215000 Applicant after: Suzhou Yiyiji Technology Co.,Ltd. Applicant after: Jiangsu Jicui brain machine integration Intelligent Technology Research Institute Co.,Ltd. Address before: 215000 6th and 7th floors, block B, building 10, Yangtze River Delta International R & D community start-up area, No. 286, qinglonggang Road, high speed rail new town, Xiangcheng District, Suzhou, Jiangsu Province Applicant before: Jiangsu Jicui brain machine integration Intelligent Technology Research Institute Co.,Ltd. |
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