CN114927533B - Grid conductive structure, preparation method thereof, touch module and display module - Google Patents

Grid conductive structure, preparation method thereof, touch module and display module Download PDF

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Publication number
CN114927533B
CN114927533B CN202210468774.1A CN202210468774A CN114927533B CN 114927533 B CN114927533 B CN 114927533B CN 202210468774 A CN202210468774 A CN 202210468774A CN 114927533 B CN114927533 B CN 114927533B
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wires
trace
wiring
line
substrate
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CN114927533A (en
Inventor
黄威龙
薛玉芳
宗敏莲
王心伟
褚海平
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Wuxi Mesh Tech Co ltd
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Wuxi Mesh Tech Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Human Computer Interaction (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

The embodiment of the specification provides a grid conductive structure preparation method, a grid conductive structure, a touch module and a display module. The preparation method of the grid conductive structure comprises the following steps: arranging a first wiring with the extending direction being the first direction and a second wiring with the extending direction being the second direction on the substrate; the first wires and the second wires are alternately arranged along the second direction, and the adjacent first wires and the adjacent second wires are spaced; a connecting wire for connecting the first wiring and the second wiring is arranged on the substrate; the line width of the connecting line is smaller than or equal to the line width of the first wiring and/or the line width of the second wiring. Through first line and second line looks interval of walking, first line, second line and connecting wire are walked to the second and are prepared in different processes, and the linewidth of connecting wire is less than or equal to the linewidth of first line and/or second line of walking, is favorable to controlling the connecting wire linewidth, is favorable to alleviating the crossing department size of first line and second line and is partial big condition, improves the luminousness.

Description

Grid conductive structure, preparation method thereof, touch module and display module
Technical Field
The specification relates to the field of conductive grids, in particular to a grid conductive structure preparation method, a grid conductive structure, a touch module and a display module.
Background
The grid conductive structure has the advantages of small line width, good ductility and the like, and is widely applied to display devices. For example, the grid conductive structure is used for manufacturing touch controls, antennas and the like, and is further applied to display devices. However, for the grid conductive structure based on the repeated arrangement of the wirings in different directions, the light transmittance is poor, and the application of the grid conductive structure is limited.
Disclosure of Invention
In view of this, various embodiments of the present disclosure are directed to providing a method for manufacturing a grid conductive structure, a touch module, and a display module, which are beneficial to improving applicability of the grid conductive structure.
The embodiment of the specification provides a method for preparing a grid conductive structure, which comprises the following steps: arranging a first wiring with the extending direction being the first direction and a second wiring with the extending direction being the second direction on the substrate; the first direction intersects with the second direction, and the first wires and the second wires are alternately arranged along the second direction, and adjacent first wires and second wires are spaced; a connecting wire for connecting the first wiring and the second wiring is arranged on the substrate; the line width of the connecting line is smaller than or equal to the line width of the first wiring and/or the line width of the second wiring.
The embodiment of the specification provides a method for preparing a grid conductive structure, which comprises the following steps: a plurality of connecting wires are arranged on a substrate; arranging a first wiring with the extending direction being the first direction and a second wiring with the extending direction being the second direction on the substrate; the first direction intersects with the second direction, and the first wires and the second wires are alternately arranged along the second direction, and adjacent first wires and second wires are spaced; the connecting wire is connected with the adjacent first wiring and the second wiring, and the line width of the connecting wire is smaller than or equal to the line width of the first wiring and/or the line width of the second wiring.
The present specification embodiment provides a mesh conductive structure including: a substrate; the first wiring and the second wiring are positioned on the same side of the substrate and have different extending directions; the first wires and the second wires are alternately arranged along the extending direction of the second wires, and adjacent first wires and second wires are spaced; connecting wires connecting adjacent first wires and second wires; the line width of the connecting line is smaller than or equal to the line width of the first wiring and/or the line width of the second wiring.
The embodiment of the specification provides a touch module, which comprises a grid conductive structure obtained by the grid conductive structure preparation method; or comprises: a grid conductive structure as claimed in any one of the preceding claims.
The embodiment of the specification provides a display module, which comprises any one of the touch modules.
According to the grid conductive structure manufacturing method and the grid conductive structure, through the arrangement of the first wires with the extending direction being the first direction and the second wires with the extending direction being the second direction, the first directions are intersected with the second directions, the first wires and the second wires are alternately arranged along the second direction, and the adjacent first wires and the adjacent second wires are spaced; and a connecting wire for connecting the first wire and the second wire is arranged, so that the connecting wire, the first wire and the second wire are formed in different working procedures, the selection range of the process in preparing the grid conductive structure can be enlarged, and the reduction of the preparation difficulty is facilitated. In addition, the connecting wire, the first wiring and the second wiring are formed in different working procedures, the line width of the connecting wire is smaller than or equal to the line width of the first wiring and/or the line width of the second wiring, so that the line widths of the wirings in different directions at the intersecting positions are controllable, the line widths of the first wiring and/or the line widths of the second wiring can be smaller than or equal to the line widths of the first wiring, the reduction of the line widths of the grid conductive structures is facilitated, the defect that the line widths of the intersecting positions of the wirings in different directions of the grid conductive structures are overlarge is overcome, the light transmittance of the grid conductive structures is improved, and the application range of the grid conductive structures is enlarged.
Drawings
Fig. 1 is a schematic structural diagram of a grid conductive structure in the prior art.
Fig. 2a-2d are schematic structural diagrams illustrating a grid conductive structure according to an embodiment at different stages in the manufacturing process.
Fig. 3 a-3 h are schematic structural diagrams illustrating a grid conductive structure according to an embodiment at different stages in the manufacturing process.
Fig. 4 is a schematic diagram of a first photoresist layer according to an embodiment.
Fig. 5 a-5 b are schematic structural views of a grid conductive structure according to an embodiment at different stages in the manufacturing process.
Fig. 6 a-6 b are schematic structural diagrams illustrating a grid conductive structure at different stages in the manufacturing process according to an embodiment.
Fig. 7 a-7 b are schematic structural diagrams illustrating a grid conductive structure according to an embodiment at different stages in the manufacturing process.
Fig. 8 is a schematic top view of a grid conductive structure according to an embodiment.
Fig. 9 is a schematic top view of a grid conductive structure according to an embodiment.
Fig. 10 is a schematic cross-sectional view of a grid conductive structure according to an embodiment.
Detailed Description
The technical solutions of some embodiments of the present specification will be clearly and completely described below with reference to the drawings in some embodiments of the present specification, and it is apparent that the described embodiments are only some embodiments of the present specification, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure based on the embodiments in the present disclosure.
Please refer to fig. 1. The grid conductive structure generally comprises wires with different extending directions, the wires with different directions are mutually crossed and repeatedly arranged to form the grid conductive structure. But can reach tens of micrometers or several micrometers due to the small wiring line width of the grid conductive structure. Under the condition of smaller line width, the influence of the phenomena such as different effects of the same process condition on the intersection of the wirings and other areas on the morphology of the final grid conductive structure is more remarkable. In the process of forming the grid conductive structure, particularly when the grid conductive structure is prepared by adopting a yellow light process, the line width of the formed grid conductive structure at the intersection position of the wires in different directions is larger, and an R-like angle structure is generated. As shown in the dashed circular box in fig. 1. For example, in order to form the wiring lines with different extending directions and intersecting each other, the photoresist layer with the same pattern is required. When the photoresist layer having the structures which are different in extending direction and intersecting is used, there is a problem that the conductive material for forming the wiring cannot be sufficiently etched at the intersecting position according to the photoresist layer pattern, etc., so that the line width is large, and the grid conductive structure of the desired shape and size cannot be formed. When the line width of the intersection of the grid conductive structures is larger, the light transmittance of the grid conductive structures is reduced, and when the grid conductive structures are applied to a display device, the problem that the grid conductive structures are visible due to the oversized intersection area is further caused, so that the display effect of the display device is affected, and poor products are caused.
The embodiment of the specification provides a method for preparing a grid conductive structure. The method for manufacturing the grid conductive structure may include the following steps.
Step S110: a first wiring 210 with a first extending direction and a second wiring 220 with a second extending direction are disposed on the substrate 100; the first direction intersects with the second direction, and along the second direction, the first wires 210 and the second wires 220 are alternately arranged, and adjacent first wires 210 and second wires 220 are spaced apart.
Step S120: disposing a connection line connecting the first trace 210 and the second trace 220 on the substrate 100; the line width of the connection line is smaller than or equal to the line width of the first trace 210 and/or the line width of the second trace 220.
For step S110, please refer to fig. 2a and fig. 3a. Fig. 3a is a schematic cross-sectional view along line AA in fig. 2 a. In some embodiments, the substrate 100 may be used to provide support for the preparation of the first trace 210 and the second trace 220. The material of the substrate 100 may be a polymer material. For example, the material of the substrate 100 may be at least one of polyethylene terephthalate, polycarbonate, polymethyl methacrylate, and glass.
In some embodiments, the shape of the first trace 210 having the extending direction being the first direction may be a straight line, may be a broken line, may be a curve, or may be other shape. The first trace 210 having the extending direction is a first direction, and the size of the first trace 210 in the first direction is larger than that in the other directions. The second trace 220 corresponds to the first trace 210, and is not described herein.
In some embodiments, the first direction intersects the second direction, which may be perpendicular to the second direction, or the first direction forms an obtuse angle with the second direction, or the first direction forms an acute angle with the second direction. The first trace 210 and the second trace 220 may be perpendicular to each other.
Please refer to fig. 2a. In some embodiments, the first trace 210 may be a plurality and the second trace 220 may be a plurality. The plurality of first traces 210 may be arranged along the second direction. The plurality of second traces 220 may be arranged along the first direction. The first trace 210 may be adjacent to at least one second trace 220. The second trace 220 may be adjacent to the at least one first trace 210.
In some embodiments, the first traces 210 and the second traces 220 are alternately arranged along the second direction, and one first trace 210 may be disposed between adjacent second traces 220 along the second direction. Along the first direction, the first trace 210 may be adjacent to the plurality of second traces 220; a plurality of second traces 220 may be disposed between adjacent first traces 210 along the first direction. The first wires 210 and the second wires 220 are alternately arranged, and correspondingly, adjacent second wires 220 are spaced along the second direction; along the second direction, adjacent first traces 210 are spaced apart from each other.
Please refer to fig. 2a and fig. 3a. In some embodiments, the first and second wires 210 and 220 are spaced apart from each other, and the first and second wires 210 and 220 may not be directly connected. There is no overlapping area between the front projection of the first trace 210 on the substrate 100 and the front projection of the second trace 220 on the substrate 100. Along the second direction, the second wires 220 may be disposed on both sides of the first wires 210, and the first wires 210 pass between adjacent second wires 220 and are not in contact with the second wires 220. The first trace 210 and the second trace 220 are prepared in the same process, which is beneficial to saving materials and reducing process difficulty. Adjacent first wires 210 and second wires 220 are spaced apart, connecting wires 310 are required to be arranged between the first wires 210 and the second wires 220 for connection, and the connecting wires 310 can be prepared independently by adopting different procedures with the first wires 210 and the second wires 220 through reserving the spacing, so that the adjustment of the line width of the connecting wires 310 is facilitated. In addition, the adjacent first wires 210 and second wires 220 are spaced, that is, the first wires 210 and second wires 220 are not directly intersected, no node exists, but are connected through the separately prepared connecting wires 310, so that a yellow light process capable of meeting the requirement of reducing the wire size and simultaneously maintaining the process precision can be utilized, the problem that the node size is bigger at the node in the yellow light process is avoided, the preparation process selection range is improved, the light transmittance of the grid conductive structure is improved, the visibility of grid lines is reduced, and the applicability of the grid conductive structure is improved.
In some embodiments, adjacent first traces 210 are spaced apart from second traces 220 such that, at least along the second direction, a region between second trace 220 and adjacent first trace 210 includes no second trace 220 disposed therebetween; or at least such that along the first direction, a region between the first trace 210 and an adjacent second trace 220 where the first trace 210 is not disposed is included. Accordingly, in the preparation of the grid conductive structure, the first trace 210 and the second trace 220 are prepared by different processes with the connection line 310.
In some embodiments, the size of the space between the first trace 210 and the second trace 220 along the second direction may be greater than 42.5 microns, or greater than 62.5 microns, which may be selected according to different error values of the exposure apparatus, the etchant, etc.; the larger the space size, the shorter the length of each section of the second trace along the second direction, and the longer the corresponding connecting line 310 connected with the second trace along the second direction. In one embodiment, the second trace length formed in step S110 is 0, the interval dimension reaches the maximum value, the length of the corresponding connection line 310 also reaches the maximum value, the connection line 310 connects the adjacent first traces 210, and the connection line 310 and the first traces 210 together form a grid conductive structure having a grid pattern. Both to facilitate the formation of the first and second traces 210, 220 at intervals and to prevent undersize from making the process difficult to achieve.
In some embodiments, the first trace 210 and the second trace 220 may be the same material. The first and second traces 210 and 220 may be formed through the same process.
In some embodiments, the step of disposing the first trace 210 having the first direction and the second trace 220 having the second direction on the substrate 100 may include: disposing a conductive material on a surface of the substrate 100; disposing a first photoresist layer 400 on the surface of the conductive material; the first photoresist layer 400 includes a first photoresist 410 having a first extending direction and a second photoresist 420 having a second extending direction, the first and second photoresists 410 and 420 are alternately arranged along the second direction, and adjacent first and second photoresists 410 and 420 are spaced apart; etching the conductive material; the conductive materials covered by the first direction photoresist 410 and the second direction photoresist 420 form the first trace 210 and the second trace 220, respectively.
Please refer to fig. 2a and fig. 4. In some embodiments, a conductive material is disposed on the surface of the substrate 100, and the conductive material may be used to form the first and second traces 210 and 220. The conductive material may be a metal material, for example, the conductive material may be at least one of copper, silver, or the like. The conductive material may be a metal oxide material. For example, the conductive material is indium tin oxide. The conductive material may be formed on the substrate 100 by at least one of printing, sputtering, plating, evaporation, coating, and the like. The material of the first photoresist layer 400 may be a positive photoresist material and may be a negative photoresist material. Since the first photoresist layer 400 is disposed on the surface of the conductive material, the conductive material not covered by the first photoresist layer 400 is removed during the process of etching the conductive material, and the conductive material covered by the first photoresist layer 400 is remained, thereby patterning the conductive material and forming the first trace 210 and the second trace 220. Adjacent first direction photoresist 410 and second direction photoresist 420 are spaced apart, and correspondingly, adjacent first traces 210 are spaced apart from second traces 220.
In some embodiments, the conductive material may also be used to form functional traces, for example, to form peripheral signal traces, etc., and accordingly, a functional trace photoresist layer corresponding to the functional traces may be provided, which is advantageous for process integration and saving conductive material.
In some embodiments, the step of disposing the first photoresist layer 400 on the surface of the conductive material may include: a photoresist material is disposed on a side of the conductive material opposite to the substrate 100, and the photoresist material is exposed and developed to form a first photoresist layer 400. Specifically, a photoresist material for forming the first photoresist layer 400 may be coated on the surface of the conductive material. A mask may be disposed on a side of the photoresist material opposite the substrate 100, the mask having a hollowed-out pattern. And exposing the photoresist material by using the mask. Specifically, ultraviolet light can be utilized to irradiate the photoresist material corresponding to the hollowed-out pattern through the hollowed-out pattern of the mask. The photoresist may be a positive-going photoresist that is soluble in a developer after exposure. Then, developing is performed by using a developing solution, and the exposed area of the photoresist material is removed, so that the photoresist material forms a pattern corresponding to the hollowed-out pattern of the mask plate, and the first photoresist layer 400 is formed. In some embodiments, the photoresist may be a negative-going photoresist, and the areas of the negative-going photoresist that are not exposed are soluble in a developer solution, and the case of the negative-going photoresist is not described in detail herein.
In some embodiments, after the first photoresist layer 400 is formed, the conductive material exposed by the first photoresist layer 400 may be removed through an etching process, leaving the conductive material covered by the first photoresist layer 400. Specifically, an etchant may be applied to the surface of the conductive material, and the etchant etches the conductive material, removing the conductive material not covered by the first photoresist layer 400, and forming the first trace 210 and the second trace 220 by the conductive material covered by the first photoresist layer 400. Please refer to fig. 2a and fig. 4. The first photoresist layer 400 includes a first direction photoresist 410 and a second direction photoresist 420, the first direction photoresist 410 and the second direction photoresist 420 are spaced apart, the extension direction of the first direction photoresist 410 is a first direction, the extension direction of the second direction photoresist 420 is a second direction, and the first direction intersects with the second direction. Accordingly, the conductive material covered by the first direction photoresist 410 layer forms the first trace 210, the conductive material covered by the second direction photoresist 420 layer forms the second trace 220, the extending direction of the first trace 210 is the first direction, the extending direction of the second trace 220 is the second direction, the first direction intersects the second trace 220, and the interval between the first direction photoresist 410 and the second direction photoresist 420 corresponds to the interval between the first trace 210 and the second trace 220. The first wiring 210 and the second wiring 220 are formed by adopting an exposure development etching process, so that the advantage of the yield is more obvious under the condition that the line width of the conductive grid structure is narrower, and the line width is reduced and the yield is improved.
In some embodiments, a photoresist layer for forming the first and second traces 210 and 220 may be disposed on the surface of the substrate 100, and the photoresist layer has a first direction opening extending in a first direction and a second direction opening extending in a second direction, the first direction intersecting the second direction, and a gap exists between the first direction opening and the second direction opening. The first and second traces 210 and 220 are formed by filling conductive materials in the first and second direction openings through a printing process, and accordingly, the first and second traces 210 and 220 having an extension direction of the first direction and a second direction are formed on the substrate 100 with a gap therebetween. By adopting the printing process, the setting range of the conductive material can be reduced, and the conductive material can be saved.
Since the first and second traces 210 and 220 are formed in one process, it is advantageous to save materials and improve process integration. In the process of preparing the first wire 210 and the second wire 220, because a gap exists between the first wire 210 and the second wire 220, even if a yellow light process is adopted, the photoresist layers for forming the first wire 210 and the second wire 220 are not crossed, so that the problem of overlarge nodes of a grid structure is solved, the selection range of the preparation process can be selectively enlarged, the high precision of the yellow light process is exerted, and the requirement of reducing the line width of the wires is met.
In step 120, the first wires 210 and the second wires 220 are connected by the connection lines 310, so as to form a grid conductive structure that is mutually communicated. The line width of the connection line 310 may be less than or equal to the line width of the first trace 210, the line width of the connection line 310 may be less than or equal to the line width of the second trace 220, and the line width of the connection line 310 may be less than or equal to the line width of the first trace 210 and the line width of the second trace 220. The problem of overlarge line width at the intersection of the first wire 210 and the second wire 220 is solved.
Please refer to fig. 2b, 2c, 3b and 3c. Fig. 3b is a schematic cross-sectional view along line AA in fig. 2 b. Fig. 3c is a schematic cross-sectional view along line AA in fig. 2 c. The outline of the first trace 210 and the second trace 220 in fig. 2b and 2c is illustrated with dashed lines. In order to facilitate illustration and understanding of the positional relationship of the first trace 210, the second trace 220, and the opening 510, in fig. 2c, the first trace 210, the second trace 220, and the photoresist layer 500 are not patterned with the same filling patterns as in fig. 3c, and only the outline is illustrated; in fig. 2b, the same fill pattern is not made to the photoresist 500-1 as in fig. 3b, only the outline is illustrated. In some embodiments, the step of disposing the connection line 310 connecting the first trace 210 and the second trace 220 on the substrate 100 includes: a second photoresist layer 500 having an opening 510 is disposed on a side of the first trace 210 and the second trace 220 opposite to the substrate 100; wherein the opening 510 extends continuously between adjacent first wires 210 and second wires 220, the opening 510 covers the first wires 210 at a front projection portion of the first wires 210, the opening 510 covers the second wires 220 at a front projection portion of the second wires 220, and a width of the opening 510 is smaller than or equal to a line width of the first wires 210 and/or a line width of the second wires 220; disposing a connection line 310 within the opening 510; the connection line 310 connects adjacent first wires 210 and second wires 220 on the substrate 100.
Please refer to fig. 2c and fig. 3c. In some embodiments, the length d1 of the opening 510 may be greater than or equal to the length d3 of the spacing between the first and second traces such that the first trace 210 and the adjacent second trace 220 are connected by the connection line 310; or the length d1 of the opening 510 may be greater than or equal to the distance d2 between the two second traces 220 on both sides of the first trace 210; so that the connection lines 310 connect the second traces 220 located at both sides of the same first trace 210. The length d1 of the opening may be a distance between sidewalls at both sides of the opening 510 along the second direction. The length d3 of the space between the first trace 210 and the second trace 220 may be a distance between sides of the first trace 210 adjacent to the second trace 220 along the second direction. The distance d2 between the two second wires 220 on both sides of the first wire 210 may be a distance between adjacent sides of the two second wires 220 on both sides of the first wire 210 along the second direction.
In some embodiments, the opening 510 extends continuously between the first trace 210 and the second trace 220, so that a connection line 310 connecting the first trace 210 and the second trace 220 may be provided. The front projection of the first trace 210 on the substrate 100 is covered by the opening 510 at the front projection portion of the substrate 100, and the front projection of the second trace 220 on the substrate 100 is covered by the opening 510 at the front projection portion of the substrate 100. The connection line 310 may be connected to the first wire 210 and the second wire 220, and a partial area of the connection line 310 is located on the surface of the first wire 210, and a partial area of the connection line 310 is located on the surface of the second wire 220, so as to implement communication between the first wire 210 and the second wire 220. The front projection of the connecting line 310 on the substrate 100 may cover the opening 510. The opening 510 covers the first wire 210 at the front projection portion of the first wire 210, and the opening 510 covers the second wire at the front projection portion of the second wire 220, so that connection stability is improved while connection between the first wire 210 and the second wire 220 is satisfied.
In some embodiments, the connection lines 310 are disposed on the surface of the substrate 100; the connection line 310 may be partially or entirely disposed on the same layer as the first trace 210 and the second trace 220, which is beneficial to the light and thin structure of the grid conductive structure. Disposing a connection line 310 within the opening 510; the connection line 310 connects the first trace 210 and the second trace 220. Accordingly, the connection line 310 is embedded in at least the space between the first trace 210 and the second trace 220. In some embodiments, the connection line 310 may be partially embedded in the space between the first trace 210 and the second trace 220 and partially overlap the surface of the first trace 210 facing away from the substrate 100 and/or the surface of the second trace 220 facing away from the substrate 100, which is beneficial to reducing the process accuracy requirement and reducing the process difficulty of setting the connection line 310. The width of the opening 510 is smaller than or equal to the line width of the first trace 210 and/or the line width of the second trace 220, which is favorable for solving the phenomenon that the line width at the intersection of the first trace 210 and the second trace 220 is too large, improving the light transmittance of the grid conductive structure, reducing the visibility of the grid conductive structure, and improving the application range of the grid conductive structure.
In some embodiments, the front projection of the opening 510 on the first trace 210 covers a partial area of the first trace 210, and the opening 510 overlaps the first trace 210; or it may be that the opening 510 partially covers the first trace 210 and partially covers the second trace 220 in the orthographic projection of the second trace 220, and the opening 510 overlaps the first trace 210 and the second trace 220.
In some embodiments, the step of disposing the second photoresist layer 500 with the opening 510 on the side of the first trace 210 and the second trace 220 opposite to the substrate 100 may include: the photoresist 500-1 is disposed on the side of the first trace 210 and the second trace 220 opposite to the substrate 100, and the photoresist 500-1 is disposed on the surface of the substrate 100; a mask plate is arranged on one side of the photoresist 500-1, which is opposite to the substrate 100; the mask plate is provided with a hollowed-out area for forming an opening 510; the exposed developed photoresist 500-1 forms a second photoresist layer 500 having an opening 510. The photoresist 500-1 may be entirely coated on the areas defined by the first and second traces 210 and 220, and the photoresist 500-1 covers the surfaces of the first and second traces 210 and 220 and the substrate 100. The mask plate is provided with a hollowed-out area for forming an opening 510, and the hollowed-out area allows light for exposure to pass through. It can be appreciated that the mask also has a non-hollowed-out area for providing a desired support for the mask and blocking the transmission of light for exposure. The photoresist 500-1 is used as a forward photoresist, and the hollowed-out area can enable light used in the exposure process to irradiate the photoresist 500-1, so that the photoresist 500-1 corresponding to the hollowed-out area after exposure can be removed through a developing process.
In some embodiments, the step of disposing the second photoresist layer 500 having the opening 510 on the side of the first trace 210 and the second trace 220 opposite to the substrate 100 includes: a second photoresist layer 500 is disposed on a side of the first trace 210 and the second trace 220 opposite to the substrate 100; along the second direction, the opening 510 extends continuously between the two second wires 220 on two sides of the same first wire 210, and the width of the opening 510 is smaller than or equal to the line width of the first wire 210 and/or the line width of the second wire 220; accordingly, the step of disposing the connecting wire 310 in the opening 510 includes: disposing a connection line 310 within the opening 510; the connecting wires 310 connect the two second wires 220 on two sides of the same first wire 210. The first wires 210 and the second wires 220 are alternately arranged, and the connecting wires 310 are connected with the two second wires 220 on two sides of the same first wire 210, which is beneficial to reducing the difficulty of the process of connecting the first wires 210 with the second wires 220. Please refer to fig. 2d and fig. 3h. Fig. 3h is a schematic cross-sectional view along line AA corresponding to fig. 2 d. For ease of illustration, two second traces on either side of the same first trace 210 are labeled 220a and 220b, respectively. Correspondingly, two ends of the formed connecting line 310 are respectively connected with two second wires 220a and 220b disposed on two sides of the same first wire 210, and the connecting line 310 is connected with the first wire 210 to realize a grid conductive structure where the first wire and the second wire cross. Since the width of the opening 510 is smaller than or equal to the line width of the first trace 210 and/or the line width of the second trace 220, it is beneficial to reduce the line width of the connecting line 310 and to alleviate the problem that the node at the intersection of the grid structure becomes larger.
In some embodiments, the step of disposing the connection line 310 connecting the first trace 210 and the second trace 220 on the substrate includes: a second photoresist layer 500 having an opening 510 is disposed on a side of the first trace 210 and the second trace 220 opposite to the substrate 100; the openings 510 continuously extend between adjacent first wires 210 and second wires 220, the openings 510 cover the first wires 210 at a front projection portion of the first wires 210, the openings 510 cover the second wires 220 at a front projection portion of the second wires 220, and the width of the openings 510 is smaller than or equal to the line width of the first wires 210 and/or the line width of the second wires 220, and along the second direction, two second wires 220 adjacent to the same first wire 210 correspond to different openings 510 of the second photoresist layer 500. Please refer to fig. 5a and fig. 6a. Fig. 6a is a schematic diagram of a cross-sectional structure along the line BB in fig. 5 a. The outline of the first trace 210 and the second trace 220 in fig. 5a is illustrated with dashed lines. In fig. 5a, the first trace 210 and the second trace 220 are not patterned with the same filling pattern as in fig. 6a, and only the outline is illustrated, for the sake of illustration and understanding of the positional relationship of the first trace 210, the second trace 220, and the opening 510. A partial area of the first trace 210 between adjacent openings 510 is covered by the second photoresist layer 500, so that the same opening 510 is connected only to a first trace 210 and a second trace 220. Please refer to fig. 5b and fig. 6b. Fig. 6b is a schematic cross-sectional view along line BB corresponding to fig. 5 b. For ease of illustration, two second traces on either side of the same first trace 210 are labeled 220a and 220b, respectively, and two connections on either side of the same first trace 210 are labeled 310a and 310b, respectively. Two ends of the connecting wire 310a are respectively connected with the second wire 220a and the first wire 210, two ends of the other connecting wire 310b are respectively connected with the first wire 210 and the second wire 220b, and the second wires 220a and 220b are connected and intersected with the first wire 210 to form a grid conductive structure. Fig. 2d and 5b show two different arrangements of the connecting lines. In some embodiments, the step of disposing the connecting wire 310 in the opening 510 includes: the connection line 310 is formed by filling the opening 510 with a conductive material using a printing process or a doctor blade process. By adopting a printing process or a knife coating process, conductive materials can be formed and arranged only in the area corresponding to the opening 510, and the connecting line 310 is formed, which is beneficial to saving materials.
Please refer to fig. 3d, 3e, 3f, 3g and 3h. In some embodiments, the step of disposing the connection line 310 on the surface of the substrate 100 includes: a conductive material 310-1 is disposed on a side of the second photoresist layer 500 opposite to the first trace 210; wherein, corresponding to the opening 510, the conductive material 310-1 is embedded in the opening 510; forming a third photoresist layer 700 corresponding to the opening 510 on a side of the conductive material 310-1 opposite to the second photoresist layer 500; wherein, the orthographic projection of the third photoresist layer 700 on the first trace 210 covers the adjacent partial region of the first trace 210 and the adjacent partial region of the second trace 220, and the orthographic projection of the third photoresist layer 700 on the second photoresist layer 500 is located in the opening 510; etching the conductive material 310-1; wherein the conductive material 310-1 covered by the third photoresist layer 700 forms the connection line 310.
Please refer to fig. 3d. The conductive material 310-1 is disposed on the side of the second photoresist layer 500 opposite to the first trace 210, which may be that the conductive material 310-1 is disposed on the surface of the second photoresist layer 500, and the conductive material 310-1 is embedded into the opening 510, so as to form the conductive material 310-1 disposed on the whole surface. Please refer to fig. 3f. The orthographic projection of the third photoresist layer 700 on the first trace 210 covers the adjacent partial region of the first trace 210 and the adjacent partial region of the second trace 220, and correspondingly, the conductive material 310-1 which can be remained after etching the conductive material 310-1 forms a connection line 310, so as to realize the connection between the first trace 210 and the second trace 220. The orthographic projection of the third photoresist layer 700 on the second photoresist layer 500 is located in the opening 510, which is convenient for removing multiple photoresist after the preparation is completed, and is beneficial to improving the stability and the service life of the conductive material. Please refer to fig. 3e. The third photoresist layer 700 may be prepared by forming the photoresist material 700-1 on the surface of the conductive material 310-1 through an exposure and development process, which will not be described herein. Please refer to fig. 3g and 3h. After etching the conductive material 310-1 to form the connection line 310, the second photoresist layer 500 and the third photoresist layer 700 may be removed.
In some embodiments, the orthographic projection of the third photoresist layer 700 on the second photoresist layer 500 overlaps the opening 510, and the conductive material 310-1 covered by the third photoresist layer 700 forms the connection line 310, and correspondingly, the conductive material 310-1 located within the opening 510 forms the connection line 310. Is beneficial to improving the process stability.
According to the manufacturing method of the conductive structure provided by the embodiment of the specification, the formed adjacent first wires 210 and second wires 220 are spaced along the second direction, and the first wires 210 and the second wires 220 do not have intersection points, so that the conductive structure can be manufactured by adopting various processes, and the manufacturing difficulty is reduced. The connecting wire 310 is connected with the first wiring 210 and the second wiring 220, the line width of the connecting wire 310 is smaller than or equal to the line width of the first wiring 210 and/or the line width of the second wiring 220, the connecting wire 310 is prepared by independent working procedures, the line width of the connecting wire 310 is beneficial to adjusting, the connecting wire 310 is connected with the first wiring 210 and the second wiring 220, the problem that the line widths of crossing parts of the wirings in different directions are large is beneficial to solving while the grid conductive structure is formed, and the applicability of the grid conductive structure is improved.
In some embodiments, the step of disposing the first trace 210 having the first direction and the second trace 220 having the second direction on the substrate 100 includes: a plurality of first wires 210 having a first extending direction and a plurality of second wires 220 having a second extending direction are disposed on the substrate 100, wherein the first direction intersects with the second direction, and the first wires 210 and the second wires 220 are alternately disposed along the second direction, and adjacent first wires 210 are spaced apart from the second wires 220. The grid conductive structures are formed by the plurality of first traces 210, the plurality of second traces 220, and the connection lines 310, which are repeatedly arranged to cross each other.
In some embodiments, a protective layer may be disposed on a side of the connection line 310 opposite to the substrate 100, where the protective layer covers the first trace 210, the second trace 220, and the connection line 310. The service life of the grid conductive structure is prolonged. The material of the protective layer may be an optical cement.
In some embodiments, the first trace 210 linewidth and the second trace 220 linewidth may be the same. The linewidth of the first trace 210 and/or the second trace 220 may range from 3-10 microns; or may be 6-10 microns.
In some embodiments, the materials of the connection line 310 and the first trace 210 and the second trace 220 may be both metal materials, forming a metal mesh conductive structure. The material of the connection line 310 and the first and second traces 210 and 220 may be the same. For example, a metal material such as copper or silver may be selected. The metal material has good conductivity and ductility, and is beneficial to ensuring the conductivity and flexibility of the grid conductive structure.
The embodiment of the specification provides a method for preparing a grid conductive structure. The method for manufacturing the grid conductive structure may include the following steps.
Step S210: a plurality of connection lines 310 are disposed on the substrate 100.
Please refer to fig. 7a. In some embodiments, the plurality of connection lines 310 are disposed at intervals from one another. The plurality of connection lines 310 may be arranged in an array for connecting the first trace 210 and the second trace 220 to form a grid conductive structure.
In some embodiments, the step of disposing the plurality of connection lines 310 on the substrate 100 may include: forming a conductive material on the surface of the substrate 100; forming a fourth photoresist layer on the surface of the conductive material; etching the conductive material; wherein the conductive material covered by the fourth photoresist layer forms the connection line 310. The specific preparation method of the fourth photoresist layer may refer to the preparation methods of other photoresist layers, and will not be described herein.
In some embodiments, the step of disposing the plurality of connection lines 310 on the substrate 100 may include: forming a fifth photoresist layer on the surface of the conductive material; wherein the fifth photoresist layer includes a plurality of spaced openings 510; a conductive material is disposed in the opening 510 of the fifth photoresist layer to form the connection line 310. Specifically, the connection line 310 may be formed using a printing process.
Step S220: a first wiring 210 with a first extending direction and a second wiring 220 with a second extending direction are disposed on the substrate 100; wherein the first direction intersects the second direction, and the first wires 210 and the second wires 220 are alternately arranged along the second direction, and adjacent first wires 210 and second wires 220 are spaced apart; the connecting line 310 connects adjacent first wires 210 and second wires 220, and a line width of the connecting line 310 is smaller than or equal to a line width of the first wires 210 and/or a line width of the second wires 220.
The first wires 210 are spaced from the second wires 220, and adjacent first wires 210 and second wires 220 are connected by a connecting wire 310; the line width of the connecting line 310 is smaller than or equal to the line width of the first trace 210 and/or the line width of the second trace 220, which is favorable for solving the problem of large line width at the intersection point of the traces in different directions, thereby improving the light transmittance of the grid conductive structure and the application range of the grid conductive structure.
Please refer to fig. 7b and fig. 8. Fig. 7b is a schematic cross-sectional view along line CC in fig. 8. The connection line 310 covered by the first trace 210 and the second trace 220 in fig. 8 is illustrated with a dotted line. In some embodiments, the step of forming the first trace 210 having the first direction and the second trace 220 having the second direction on the substrate 100 includes: providing a conductive material on a side of the substrate 100 adjacent to the connection line 310; wherein the conductive material covers the connection line 310 and the substrate 100; forming a sixth photoresist layer on the conductive material; the sixth photoresist layer comprises a first-direction photoresist layer with a first extending direction and a second-direction photoresist layer with a second extending direction, the first direction is intersected with the second direction, the first-direction photoresist layer and the second-direction photoresist layer are alternately arranged along the second direction, and adjacent first-direction photoresist layers and the second-direction photoresist layer are spaced; the orthographic projection of the first direction photoresist layer on the connecting line 310 covers a partial area of the connecting line 310, and the orthographic projection of the second direction photoresist layer on the connecting line 310 covers a partial area of the connecting line 310; wherein, the line width of the connecting line 310 is smaller than or equal to the width of the first direction photoresist layer and/or the width of the second direction photoresist layer; and etching to remove the conductive material exposed to the sixth photoresist layer, wherein the conductive material covered by the sixth photoresist layer forms the first wiring 210 and the second wiring 220. Adjacent first direction photoresist layers are spaced from the second direction photoresist layers; the orthographic projection of the first direction photoresist layer on the connecting line 310 covers a partial area of the connecting line 310, and the orthographic projection of the second direction photoresist layer on the connecting line 310 covers a partial area of the connecting line 310, thereby not only meeting the condition that the first wire 210 and the second wire 220 are not in direct contact, but also enabling the formed connecting line 310 to connect the first wire 210 and the second wire 220.
In some embodiments, before forming the conductive material on the substrate 100 near the connection line 310, the method further includes: forming a seventh photoresist layer on a surface of the connecting line 310 opposite to the substrate 100; the seventh photoresist layer comprises a first sub-photoresist region and a second sub-photoresist region which are spaced apart. A space may exist between the first sub-photoresist region and the profile of the connection line 310 away from the second sub-photoresist region, and/or a space may exist between the second sub-photoresist region and the profile of the connection trace away from the first sub-photoresist region.
Accordingly, in the step of forming the conductive material on the side of the substrate 100 near the connection line 310, the method includes: forming a conductive material on a side of the substrate 100 adjacent to the connection line 310; wherein, the said conductive material embeds the interval of the said first sub-photoresistance district and second sub-photoresistance district correspondingly; correspondingly, the step of forming a sixth photoresist layer on the conductive material includes: forming a sixth photoresist layer on the conductive material; wherein the sixth photoresist layer exposes the seventh photoresist layer; the sixth photoresist layer covers the conductive material corresponding to the interval and extends continuously; the sixth photoresist layer is in contact with the conductive material corresponding to the connection line 310. So that the first and second traces 210 and 220 having different extending directions and connected through the connection line 310 can be formed when the conductive material is etched and removed.
According to the conductive structure preparation method provided by the embodiment of the specification, the connecting wire 310, the first wiring 210 and the second wiring 220 are prepared in different procedures, the first wiring 210 and the second wiring 220 are spaced, the connecting wire 310 can realize connection between the first wiring 210 and the second wiring 220, the line width of the connecting wire 310 is smaller than or equal to that of the first wiring 210 and/or the second wiring 220, the problem that the line width at the intersection of the wirings in different directions is large is solved while the grid conductive structure is formed, and the applicability of the grid conductive structure is improved.
The present description provides a grid conductive structure. The mesh conductive structure may include: a substrate 100; the first wires 210 and the second wires 220 are located on the same side of the substrate 100 and have different extending directions; wherein, along the extending direction of the second wires, the first wires 210 and the second wires 220 are alternately arranged, and adjacent first wires 210 and second wires 220 are spaced apart; a connection line 310 connecting adjacent first wires 210 and second wires 220; the line width of the connection line 310 is smaller than or equal to the line width of the first trace 210 and/or the line width of the second trace 220.
Please refer to fig. 2d and fig. 3h. Or referring to fig. 5b and 6b. Or referring to fig. 7b and 8. In some embodiments, the first trace 210 and the second trace 220 may be prepared using the same process. Is beneficial to reducing the complexity of the process and improving the preparation efficiency. The connection line 310 may be prepared using a different process from the first and second traces 210 and 220. Please refer to fig. 3h. The first trace 210 and the second trace 220 may be located at the same layer; the connection line 310 may be at least partially located at the same layer as the first trace 210 and the second trace 220. The first trace 210 and the second trace 220 may be located on a surface of the substrate 100. Please refer to fig. 7b. The first trace 210 and the second trace 220 may be at least partially located on the same layer; the connection line 310 may be at least partially located at the same layer as the first trace 210 and the second trace 220. The surface of the connection line 310 near the side of the substrate 100 may be partially or entirely in contact with the surface of the substrate 100. The surface of the first trace 210 near the substrate 100 and the surface of the second trace 220 near the substrate 100 may be partially or entirely in contact with the surface of the substrate 100.
Please refer to fig. 2d, fig. 9 and fig. 10. Fig. 10 is a schematic sectional view of the structure along line DD in fig. 9. In some embodiments, the connection line 310 connects adjacent first and second traces 210 and 220. The connection line 310 may be connected to the first trace 210 and the second trace 220 by a direct contact manner. The connection line may contact the surfaces of the first and second traces 210 and 220. The connection line 310 is connected to the first trace 210, and the connection line 310 is connected to the second trace 220. The connection line 310 is connected to the first trace 210, which may be that the connection between the connection line 310 and the first trace 310 is achieved only through side contact, and there is no overlapping area between the front projection of the connection line 310 on the substrate 100 and the front projection of the first trace 310 on the substrate 100; or the connection of the connection line 310 with the first trace 210 may be an area where there is an overlap between the front projection of the connection line 310 on the substrate 100 and the front projection of the first trace 310 on the substrate 100. The connection manner of the connection line 310 and the second trace 220 may refer to the connection manner of the connection line 310 and the first trace 210. The same connection line 310 may be connected to the second trace 220 in the same manner as the connection line 310 is connected to the first trace 310 or in a different manner.
In some embodiments, the first trace 210 and the second trace 220 extend in different directions. The extending direction of the first wire 210 and the extending direction of the second wire 220 may be perpendicular, or an included angle between the extending direction of the first wire 210 and the extending direction of the second wire 220 is an obtuse angle, or an included angle between the extending direction of the first wire 210 and the extending direction of the second wire 220 is an acute angle. The extending direction of the first trace 210 may be a direction corresponding to a maximum size of the dimensions of the first trace 210 in each direction. The extending direction of the second trace 220 may be a direction corresponding to a maximum size of the dimensions of the second trace 220 in each direction. The connection line 310 connects adjacent first trace 210 and second trace 220. The extending direction of the connecting line 310 may be the same as the extending direction of the second trace 220; or may be different.
Please refer to fig. 2a. In some embodiments, the first traces 210 and the second traces 220 are alternately arranged along the extending direction of the second traces 220. It may be that, along the extending direction of the second wires 220, one first wire 210 is disposed between adjacent second wires 220. Along the extending direction of the first trace 210, the first trace 210 may be adjacent to the plurality of second traces 220; a plurality of second traces 220 may be disposed between adjacent first traces 210 along the first direction. Along the extending direction of the second wires 220, the first wires 210 and the second wires 220 are alternately arranged, and other wires or other structures can be arranged between the first wires and the second wires, so long as one first wire 210 is arranged between adjacent second wires 220 along the extending direction of the second wires 220.
In some embodiments, adjacent first traces 210 are spaced apart from second traces 220. It may be that the first trace 210 and the second trace 220 are not directly connected. There is no overlapping area between the front projection of the first trace 210 on the substrate 100 and the front projection of the second trace 220 on the substrate 100. Along the second direction, the second wires 220 may be disposed on both sides of the first wires 210, and the first wires 210 pass between adjacent second wires 220 and are not in contact with the second wires 220. The first trace 210 and the second trace 220 can be prepared in the same process, which is beneficial to saving materials and reducing process difficulty. Adjacent first wires 210 and second wires 220 are spaced apart, connecting wires 310 are required to be arranged between the first wires 210 and the second wires 220 for connection, and the connecting wires 310 can be prepared independently by adopting different procedures with the first wires 210 and the second wires 220 through reserving the spacing, so that the adjustment of the line width of the connecting wires 310 is facilitated. The first wires 210 and the second wires 220 are alternately arranged, and correspondingly, adjacent second wires 220 are spaced along the second direction; along the second direction, adjacent first traces 210 are spaced apart from each other.
In some embodiments, the line width of the connection line 310 may be less than or equal to the line width of the first trace 210; or the line width of the connection line 310 may be less than or equal to the line width of the second trace 220; or the line width of the connection line 310 may be less than or equal to the line width of the first trace 210 and the line width of the second trace 220. The line width of the connection line 310 may be perpendicular to the extending direction of the connection line 310, and the dimension of the connection line 310. The line width of the first trace 210 may be a size of the first trace 210 perpendicular to the extending direction of the first trace 210. The line width of the second wire 220 may be a size of the second wire 220 perpendicular to the extending direction of the second wire 220. The line width of the first trace 210 may be equal to the line width of the second trace 220, which is beneficial to improving the optical uniformity of the grid conductive structure.
According to the grid conductive structure provided by the embodiment of the specification, the adjacent first wires 210 and second wires 220 are alternately arranged, the first wires 210 and the second wires 220 on the same side of the substrate 100 are alternately arranged, the first wires 210 and the second wires 220 are connected by using the connecting wires 310, the line width of the connecting wires 310 is smaller than or equal to that of the first wires 210 and/or that of the second wires 220, so that the problem that the line width sizes of the first wires 210 and the second wires 220 with different extending directions are larger at the intersecting positions is solved, the light transmittance of the grid conductive structure can be improved, the visibility of grid lines can be reduced, and the application range of the grid conductive structure can be improved.
Referring to fig. 5b or fig. 8, in some embodiments, along the extending direction of the first trace 210, the first trace 210 is adjacent to the plurality of second traces 220, and the first trace 210 covers the connecting line 310 at the orthographic projection portion of the connecting line 310. The front projection portion of the connecting wire 310 of the first trace 210 covers the connecting wire 310, the first trace 210 is located on the surface of the connecting wire 310, and the first trace 210 and the connecting wire 310 can be in direct contact. Along the extending direction of the first wires 210, the first wires 210 are adjacent to the plurality of second wires 220, the adjacent first wires 210 and second wires 220 are alternately arranged, and the connection lines 310 connect the adjacent first wires 210 and second wires 220, so that the same connection line 310 can be connected with the plurality of first wires 210. The front projection portion of the connection line 310 of the first trace 210 covers the connection line 310, so that the connection stability between the first trace 210 and the connection line 310 can be improved.
Please refer to fig. 3h. In some embodiments, the first trace 210 partially covers the connection line 310, and the second trace 220 partially covers the connection line 310. The connection line 310 may be prepared prior to the first trace 210 and the second trace 220. The first trace 210 and the second trace 220 may be located on the surface of the substrate 100, and the connection line 310 may be partially located on the surface of the substrate 100. Partial coverage among the plurality of wires can reduce the process difficulty in the preparation process and improve the connection stability.
Please refer to fig. 6b. In some embodiments, the connection line 310 partially covers the first trace 210, and the connection line 310 partially covers the second trace 220. The first trace 210 and the second trace 220 may be prepared prior to the connection line 310. The connection line 310 may be located on the surface of the substrate, and the first trace 210 and the second trace 220 may be partially located on the surface of the substrate 100. The connecting wire 310 overlaps the first trace 210 and the second trace 220, which is beneficial to improving the connection stability and reducing the difficulty of the preparation process.
In some embodiments, the area where the first trace 210 and the connection line 310 overlap forms a node, and the thickness of the node is greater than the thickness of the first trace 210 and the thickness of the node is greater than the thickness of the second trace 220 along a direction perpendicular to the plane in which the first trace 210 is located. The area where the first trace 210 and the connection line 310 overlap may be an area where the first trace 210 is in surface contact with the connection line 310. The thickness of the first trace 210 may be the same as the thickness of the second trace 220, and the thickness of the first trace 210 may be the same as the thickness of the connection line 310.
Please refer to fig. 2d and fig. 3h. In some embodiments, the connection line 310 intersects the first trace 210, and two ends of the connection line 310 are connected to the second traces 220 on two sides of the first trace 210. The method is beneficial to reducing the difficulty of the preparation process and keeping the continuity and the flatness of the grid conductive structure.
Please refer to fig. 5b and fig. 6b. In some embodiments, two ends of the connection line 310 are respectively connected to the first and second wires 210 and 220 spaced apart from each other. Along the extending direction of the second wires 220, the second wires 220 adjacent to the same first wire 210 are connected to the first wire 210 through different connection wires 310. Accordingly, adjacent connection lines 310 have a pitch on the surface of the first trace 210. The connection line 310 is connected to only one segment of the second trace 220 and one segment of the first trace 210.
In some embodiments, the size of the space between the first trace 210 and the second trace 220 along the extending direction of the second trace 220 may be greater than 42.5 microns, or greater than 62.5 microns, and may be selected according to different error values of exposure apparatus, etchant, etc.; the larger the space size, the shorter the length of each section of the second trace along the second direction, and the longer the corresponding connecting line 310 connected with the second trace along the second direction. Both to facilitate the formation of the first and second traces 210, 220 at intervals and to prevent undersize from making the process difficult to achieve. In one embodiment, the second trace length is 0, the interval dimension reaches the maximum value, the length of the corresponding connection line 310 also reaches the maximum value, two ends of the connection line 310 are connected to the adjacent first traces 210, and the connection line 310 and the first traces 210 together form a grid conductive structure with a grid pattern. The size of the interval between the first trace 210 and the second trace 220 may be a distance between the first trace 210 and the second trace 220 along the extending direction of the second trace 220.
The embodiment of the specification provides a touch module, which comprises the grid conductive structure in any one of the embodiments. The touch module may include one or more touch electrode layers. Each touch electrode layer can comprise a plurality of grid conductive structures which are arranged at intervals. The touch module may include a plurality of touch electrode layers. For example, the touch panel includes two touch electrode layers, and an insulating layer may be disposed between the touch electrode layers.
The embodiment of the specification provides a display module, which comprises the touch module described in any one of the embodiments.
The touch module and the display module provided by the embodiments of the present disclosure have the same beneficial effects as the grid conductive structure provided by the embodiments.
The grid conductive structure provided in the embodiment of the present disclosure may be prepared by using the method for preparing a grid conductive structure provided in any one of the embodiments.
The various embodiments in this specification are themselves focused on differing portions from other embodiments, and the various embodiments may be explained in cross-reference to one another. Any combination of the various embodiments in the present specification is encompassed by the disclosure of the present specification by a person of ordinary skill in the art based on general technical knowledge.
The technical features of the above embodiments may be combined in any manner, and for brevity, all of the possible combinations of the technical features of the above embodiments are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above description is only of some embodiments of the present disclosure, and is not intended to limit the present disclosure, but any modifications, equivalents, etc. within the spirit and principles of the present disclosure are intended to be included in the scope of the disclosure.

Claims (10)

1. A method for preparing a grid conductive structure, comprising:
Arranging a first wiring with the extending direction being the first direction and a second wiring with the extending direction being the second direction on the substrate; the first direction intersects with the second direction, and the first wires and the second wires are alternately arranged along the second direction, and adjacent first wires and second wires are spaced;
A connecting wire for connecting the first wiring and the second wiring is arranged on the substrate; the line width of the connecting line is smaller than or equal to the line width of the first wiring and/or the line width of the second wiring, so that the light transmittance of the grid conductive structure is improved.
2. The method of claim 1, wherein the step of providing a first trace having a first direction of extension and a second trace having a second direction of extension on the substrate comprises:
providing a conductive material on the surface of the substrate;
A first photoresist layer is arranged on the surface of the conductive material; the first photoresist layer comprises first-direction photoresists with a first extending direction and second-direction photoresists with a second extending direction, the first-direction photoresists and the second-direction photoresists are intersected, and the first-direction photoresists and the second-direction photoresists are alternately arranged along the second direction, and adjacent first-direction photoresists and the second-direction photoresists are spaced;
Etching the conductive material; the first wiring and the second wiring are formed by the conductive material covered by the first direction photoresist and the second direction photoresist respectively.
3. The method of claim 1, wherein the step of providing a connection line on the substrate connecting the first trace and the second trace comprises:
a second photoresist layer with an opening is arranged on one side of the first wiring and the second wiring, which is opposite to the substrate; the opening continuously extends between the adjacent first wires and the second wires, the opening covers the first wires at the orthographic projection part of the first wires, the opening covers the second wires at the orthographic projection part of the second wires, and the width of the opening is smaller than or equal to the line width of the first wires and/or the line width of the second wires;
a connecting wire is arranged in the opening; the connecting wire is connected with the adjacent first wiring and the adjacent second wiring.
4. The method of claim 3, wherein the step of disposing a second photoresist layer having an opening on a side of the first trace and the second trace opposite the substrate comprises:
A second photoresist layer is arranged on one side of the first wiring and the second wiring, which is opposite to the substrate; the openings continuously extend between the two second wires at two sides of the same first wire along the second direction, and the width of the openings is smaller than or equal to the line width of the first wire and/or the line width of the second wire;
Correspondingly, the step of disposing the connecting wire in the opening includes:
a connecting wire is arranged in the opening; the connecting wires are connected with the two second wires on two sides of the same first wire.
5. A method according to claim 3, wherein the step of providing a connection line within the opening comprises:
filling conductive materials in the openings by adopting a printing process or a knife coating process to form the connecting lines;
Or a conductive material is arranged on one side of the second photoresist layer, which is opposite to the first wiring; wherein the conductive material is embedded in the opening corresponding to the opening;
Forming a third photoresist layer corresponding to the opening on one side of the conductive material opposite to the second photoresist layer; the orthographic projection of the third photoresist layer on the first wiring covers the adjacent partial area of the first wiring and the adjacent partial area of the second wiring, and the orthographic projection of the third photoresist layer on the second photoresist layer is positioned in the opening;
Etching the conductive material; wherein the conductive material covered by the third photoresist layer forms the connecting line.
6. A method for preparing a grid conductive structure, comprising:
a plurality of connecting wires are arranged on a substrate;
Arranging a first wiring with the extending direction being the first direction and a second wiring with the extending direction being the second direction on the substrate; the first direction is intersected with the second direction, the first wires and the second wires are alternately arranged along the second direction, and adjacent first wires and second wires are spaced; the connecting wires are connected with the adjacent first wires and the second wires, and the line width of the connecting wires is smaller than or equal to the line width of the first wires and/or the line width of the second wires so as to improve the light transmittance of the grid conductive structure.
7. A mesh conductive structure, comprising:
A substrate;
The first wiring and the second wiring are positioned on the same side of the substrate and have different extending directions; the first wires and the second wires are alternately arranged along the extending direction of the second wires, and adjacent first wires and second wires are spaced;
Connecting wires connecting adjacent first wires and second wires; the line width of the connecting line is smaller than or equal to the line width of the first wiring and/or the line width of the second wiring, so that the light transmittance of the grid conductive structure is improved.
8. The grid conductive structure according to claim 7, wherein two ends of the connecting wire are connected to the first and second spaced apart wires, respectively;
Or the connecting line is intersected with the first wiring, and two ends of the connecting line are connected with the second wirings on two sides of the first wiring.
9. The utility model provides a touch module which characterized in that includes: a mesh conductive structure obtained by the mesh conductive structure production method of any one of claims 1 to 6; or comprises: the grid conductive structure of any one of claims 7-8.
10. A display module, comprising: the touch module of claim 9.
CN202210468774.1A 2022-04-29 2022-04-29 Grid conductive structure, preparation method thereof, touch module and display module Active CN114927533B (en)

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