CN217822809U - Light shield, grid conductive structure, touch module and display module - Google Patents
Light shield, grid conductive structure, touch module and display module Download PDFInfo
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- CN217822809U CN217822809U CN202221040607.9U CN202221040607U CN217822809U CN 217822809 U CN217822809 U CN 217822809U CN 202221040607 U CN202221040607 U CN 202221040607U CN 217822809 U CN217822809 U CN 217822809U
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Abstract
The embodiment of the specification provides a photomask, a grid conductive structure, a touch module and a display module. The light cover is in a grid pattern; wherein the grid pattern comprises a plurality of first band patterns and a plurality of second band patterns; the first strip-shaped pattern extends continuously and equally along a first direction; the second strip-shaped patterns extend along a second direction different from the first direction, and a plurality of second strip-shaped patterns arranged along the first direction are arranged between every two adjacent first strip-shaped patterns; the second belt-shaped pattern has a main body portion and an end portion connected to the first belt-shaped pattern along the second direction, and the width of the end portion is smaller than that of the main body portion. By making the width of the end portion smaller than that of the main body portion, more areas can be exposed, which is beneficial to relieving the problem of larger size of the intersection structures.
Description
Technical Field
The specification relates to the field of conductive grids, in particular to a photomask, a grid conductive structure, a touch module and a display module.
Background
The yellow light process and the etching process are used as patterning means and are widely applied to the preparation process of electronic products. In the case of the application of the yellow light process, the conductive material is patterned through exposure, development, etching, and the like. However, for the structure having the intersecting pattern, the influence of various conditions such as shape characteristics, process errors and the like is limited, so that the finally obtained product pattern is often inconsistent with the design, the pattern size at the intersection point is often larger than the design size, and the product performance is lower than the design expectation.
SUMMERY OF THE UTILITY MODEL
In view of this, embodiments of the present disclosure are directed to providing a mask, a grid conductive structure, a touch module and a display module, which are beneficial to reducing the size of the intersection of the intersecting patterns.
The embodiment of the specification provides a photomask, wherein the photomask is in a grid pattern; wherein the grid pattern comprises a plurality of first strip patterns and a plurality of second strip patterns; the first strip-shaped pattern extends continuously along a first direction with equal width; the second strip-shaped patterns extend along a second direction different from the first direction, and a plurality of second strip-shaped patterns arranged along the first direction are arranged between every two adjacent first strip-shaped patterns; the second belt-shaped pattern has a main body portion and an end portion connected to the first belt-shaped pattern along the second direction, and the width of the end portion is smaller than that of the main body portion.
The embodiment of the specification provides a photomask, wherein the photomask is in a grid pattern; wherein the grid pattern comprises a plurality of first strip patterns and a plurality of second strip patterns; the first strip-shaped pattern extends continuously along a first direction with equal width; the second strip-shaped patterns extend along a second direction different from the first direction, and a plurality of second strip-shaped patterns arranged along the first direction are arranged between every two adjacent first strip-shaped patterns; the second band pattern has a main body portion and at least one end portion along the second direction, the end portion is located between the main body portion and the first band pattern, the end portion has a space with the first band pattern, and the space is 0.035-0.0625mm in size.
Embodiments of the present specification provide a mesh conductive structure, including: the first routing and the second routing are arranged on the same layer and are connected with each other; the first routing lines extend continuously along a first direction with equal width; the second routing lines extend along a second direction different from the first direction, a plurality of second routing lines arranged along the first direction are arranged between adjacent first routing lines, and each first routing line is adjacent to the plurality of second routing lines along the first direction; along the second direction, the second wire has a main body wire and an end wire connected with the first wire, and the width of the end wire is smaller than or equal to that of the main body wire.
An embodiment of the present specification provides a touch module, including: the grid conductive structure.
This specification embodiment provides a display module assembly, includes: the touch module is provided.
The photomask provided by the embodiment of the specification is in a grid pattern and can be used for preparing a grid structure, and as the width of the end part is smaller than that of the main body part or the distance is formed between the end part and the first strip-shaped pattern, more photoresist materials can be exposed in the exposure process in the yellow light process, so that the problem that the intersection part of the structure with the intersected patterns prepared by the yellow light process is too large can be solved, and the applicability and the product yield of the yellow light process can be improved.
Drawings
Fig. 1 is a schematic diagram of a grid conductive structure in the prior art.
Fig. 2 is a schematic diagram of a mask structure in the prior art.
Fig. 3 is a schematic diagram of a mask structure according to an embodiment.
Fig. 4 is a schematic diagram of a mask structure according to an embodiment.
Fig. 5 is a schematic diagram of a mask structure according to an embodiment.
Fig. 6 is a schematic diagram of a grid conductive structure according to an embodiment.
Fig. 7 is a schematic diagram of a grid conductive structure according to an embodiment.
Detailed Description
The technical solutions in some embodiments of the present specification will be clearly and completely described below with reference to the drawings in some embodiments of the present specification, and it is obvious that the described embodiments are only some embodiments of the present specification, but not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present specification without any creative effort belong to the scope of the present specification.
As mentioned in the background, when forming a structure having an intersecting pattern, such as a grid conductive structure, there are cases where the resulting product pattern does not conform to the design. Please refer to fig. 1 and 2. Fig. 1 shows a grid conductive structure prepared using the mask shown in fig. 2. The mask includes a first band pattern 110 and a second band pattern 120. The correspondingly formed grid conductive structure comprises a first line L1 and a second line L2, the first line L1 and the second line L2 extend along different directions, and the adjacent first line L1 and the adjacent second line L2 are connected to form the grid conductive structure. However, the applicant has found that due to the intersecting structure of the first trace L1 and the second trace L2, when the grid conductive structure is formed at a time by using the mask corresponding to the designed grid conductive structure pattern, the actually prepared grid conductive structure pattern does not conform to the designed mask pattern, and the node of the actual grid conductive structure is larger, as shown by the dotted line box in fig. 1. The technical requirements of line width of wiring are not met and reduced, and the light transmission of the grid conductive structure is influenced
The present embodiment provides a mask 100. The mask 100 is in a grid pattern; wherein the grid pattern includes a plurality of first band patterns 110 and a plurality of second band patterns 120; the first band pattern 110 extends continuously and equally wide along a first direction; the second band-shaped patterns 120 extend along a second direction different from the first direction, and a plurality of second band-shaped patterns 120 arranged along the first direction are arranged between adjacent first band-shaped patterns 110; in the second direction, the second band pattern 120 has a main body portion 121 and an end portion 122 connected to the first band pattern 110, and the width of the end portion 122 is smaller than that of the main body portion 121.
Please refer to fig. 3. In some embodiments, the first band pattern 110 is in a long strip shape, and the outer contour of the first band pattern 110 may be a straight line, an arc line, or a broken line; or the outer contour of the first band-shaped pattern 110 may be partly straight and partly curved. As long as the first belt pattern 110 is a long bar, the first belt pattern 110 may have a size in one direction larger than that in the other direction.
In some embodiments, the grid pattern includes a plurality of first band patterns 110 and a plurality of second band patterns 120, the first band patterns 110 and the second band patterns 120 extend in different directions, and the second band patterns 120 extend along a second direction. The plurality of first band patterns 110 are arranged in a direction different from the first direction, and the plurality of first band patterns 110 may be arranged in a direction different from the second direction.
In some embodiments, a plurality of second band patterns 120 arranged along the first direction are disposed between adjacent first band patterns 110. Accordingly, the first band patterns 110 continuously extending along the first direction are plural, each first band pattern 110 is adjacent to the second band patterns 120, and the adjacent first band patterns 110 are connected to the second band patterns 120, so that the mask 100 is in a grid pattern. The second band patterns 120 may be disposed on both opposite sides of the first band pattern 110, and the shapes and sizes of the second band patterns 120 located on both opposite sides of the same first band pattern 110 may be the same. Alternatively, in the case where the first band pattern 110 is at the boundary of the mesh pattern, only one side of the first band pattern 110 may be provided with the second band pattern 120.
In some embodiments, the first band pattern 110 extends continuously and equally wide along the first direction. The width of the first band pattern 110 may be a dimension of the first band pattern 110 perpendicular to the first direction. In the second direction, the second band pattern 120 has a main body portion 121 and an end portion 122 connected to the first band pattern 110, and the width of the end portion 122 is smaller than that of the main body portion 121. The width of the second band pattern 120 may be a dimension of the second band pattern 120 perpendicular to the second direction. The widths of the second band patterns 120 of different regions may be different along the second direction. It is understood that the second band pattern 120 may be divided into the end portion 122 and the body portion 121 based on a difference in width, and the width of the end portion 122 is smaller than that of the body portion 121. The end portion 122 is connected to the first band pattern 110, and accordingly, the end portion 122 is closer to the first band pattern 110 than the body portion 121. It is understood that, in a case where the second band pattern 120 is located between two adjacent first band patterns 110, the second band pattern 120 may have end portions 122 respectively connected to the two first band patterns 110, and a body portion 121 located between the two end portions 122.
The mask 100 provided in the embodiments of the present disclosure is in a grid pattern, and can be used for preparing a grid conductive structure, and the width of the end portion 122 adjacent to the first strip-shaped pattern 110 is smaller than the width of the main body portion 121, so that more photoresist materials can be exposed in a yellow light process, and thus, the pattern of the photoresist layer can be adjusted, the size of a node can be reduced when the mask is used for preparing the grid conductive structure, which is beneficial to alleviating the problem of a large node generated in the process of preparing the grid conductive structure, and improving the application range of the yellow light process.
In some embodiments, the reticle 100 includes a base layer for providing support and a pattern layer. The grid pattern of the reticle may be a pattern of a presentation of a pattern layer. Providing a base layer may provide support for the patterning layer. The base layer material may be a light transmissive material. For example, the base layer material may be glass.
In some embodiments, a hollow area is formed between two adjacent first band patterns 110 and two adjacent second band patterns connected to the two adjacent first band patterns 110; wherein, along the extending direction of the first belt-shaped pattern 110, the distance between the main body parts 121 is smaller than the distance between the end parts 122. The first band pattern 110 is connected to the second band pattern 120, and the structures corresponding to the first band pattern 110 and the second band pattern 120 may be connected through the sidewalls. Along the extending direction of the first stripe pattern 110, the distance between the main body portions 121 is smaller than the distance between the end portions 122, so that the exposure range near the node region is further increased in the process of forming the mask 100, which is beneficial to reducing the node size of the grid conductive structure.
In some embodiments, the end 122 has an axis of symmetry parallel to the second direction. The end portion 122 has a symmetry axis parallel to the second direction, and the end portion 122 is a symmetric pattern, which is beneficial to improving the uniformity of the photoresist pattern prepared by the photomask, further improving the structural uniformity of different positions of the grid conductive structure, and being beneficial to improving the consistency of the optical performance of the grid conductive structure. In addition, the end portion 122 has symmetry, which is beneficial to improving the stability of the mask 100 and preventing the mask from breaking. In some embodiments, the width of the first band pattern 110 may be 3-10 microns; or may be 6-10 microns. The width of the second band pattern 120 may be 3 to 10 micrometers; or may be 6-10 microns. The symmetrical structure is favorable for maintaining the photomask pattern and prolonging the service life of the photomask.
In some embodiments, the end portion 122 has a smooth outer profile in a direction approaching the first band pattern 110. The end portion 122 has a smooth profile, which is beneficial for an etchant to enter the end portion 122 during an etching process, and is beneficial for improving the form uniformity of the grid conductive structure.
In some embodiments, the width of the end portion 122 gradually decreases in a direction approaching the first band pattern 110. The end 122 may be any shape. Since the size tends to increase along the direction close to the intersection, the width of the end portion 122 gradually decreases along the direction close to the first band pattern 110, which is advantageous for reducing the size of the intersection and for improving the uniformity of the width of the formed mesh conductive structure.
Please refer to fig. 3 or fig. 4. In some embodiments, the outer contour shape of the end portion 122 is a straight line or an arc line in a direction approaching the first band pattern 110. Preferably, the outer contour of the end portion 122 is an arc, which is beneficial to improving the mechanical performance of the mask 100.
In some embodiments, the outer contour of the end portion 122 along the direction approaching the first band-shaped pattern 110 may be a plurality of line segments extending in different directions or a plurality of arc lines having different radii of curvature.
In some embodiments, the material of the optical mask 100 is optically transparent or the material of the optical mask 100 is optically opaque. The mask 100 is made of different materials, and accordingly, the photoresist material may be a positive photoresist or a negative photoresist, which is beneficial to increasing the application range of the mask 100.
Please refer to fig. 5. The present embodiment provides a mask 100. The mask 100 is in a grid pattern; wherein the grid pattern includes a plurality of first band patterns 110 and a plurality of second band patterns 120; the first band pattern 110 extends continuously with equal width along a first direction; the second band-shaped patterns 120 extend along a second direction different from the first direction, and a plurality of second band-shaped patterns 120 arranged along the first direction are arranged between adjacent first band-shaped patterns 110; in the second direction, the second band pattern 120 has a main body portion 121 and at least one end portion 122, the end portion 122 is located between the main body portion 121 and the first band pattern 110, and the end portion 122 has a distance from the first band pattern 110, and the distance is 0.035-0.0625mm.
In some embodiments, the end portion 122 has a distance from the first band pattern 110, and the first band pattern 110 and the second band pattern 120 may be unconnected. The end portion 122 and the body portion 121 are divided based on the relative positions of the respective regions of the second band-shaped pattern 120 and the first band-shaped pattern 110, and are located in different regions of the second band-shaped pattern 120. It is understood that both sides of the second band pattern 120 may be provided with the first band pattern 110 along the second direction. In the case where the second band pattern 120 is located at the edge of the mask, the second band pattern 120 may be located outside the first band pattern 110, and the second band pattern 120 may be adjacent to only one first band pattern 110 along the second direction, and at this time, the second band pattern 120 may be divided into only one body portion 121 and one end portion 122.
In some embodiments, the spacing has a dimension of 0.035-0.0625mm. The mask manufacturing method is beneficial to reducing the mask manufacturing difficulty, meanwhile, based on the fact that the etching precision in the yellow light process is also a reason that the size of the pattern at the intersection point is often larger than the design size, by utilizing the insufficient etching, even if the distance is formed between the end part 122 and the first strip-shaped pattern 110, a continuous grid conductive structure can be formed, meanwhile, the size of the intersection point is reduced, the problem that the intersection point of the structure with the intersected pattern prepared by the yellow light process is larger is solved, and the applicability and the product yield of the yellow light process are favorably improved.
In some embodiments, a reticle includes a base layer for providing support and a pattern layer. The reticle may be a pattern of a presentation of a pattern layer in a grid pattern. Providing a base layer may provide support for the patterning layer. The end portion has a distance from the first band pattern 110, and may be a region where the end portion 122 and the first band pattern 110 do not intersect at the base layer.
In some embodiments, end portion 122 may be smaller in size than body portion 121. It is beneficial to further reduce the size of the intersection of the photoresist layer formed by the photomask and further reduce the size of the intersection of the grid conductive structure. Regarding other features of the first and second band patterns 110 and 120 when the end portion 122 has a distance from the first band pattern 110, reference may be made to an embodiment in which the first and second band patterns 110 and 120 are connected, and details are not described herein.
Please refer to fig. 6 or fig. 7. The present description embodiments provide a mesh conductive structure 300. The grid conductive structure 300 may include a first trace and a second trace disposed in the same layer and connected to each other; the first routing lines extend continuously along a first direction with equal width; the second traces extend along a second direction different from the first direction, a plurality of second traces 320 arranged along the first direction are disposed between adjacent first traces 310, and each first trace 310 is adjacent to a plurality of second traces 320 along the first direction; in the second direction, the second trace 320 has a main trace 321 and an end trace 322 connected to the first trace 310, and a width of the end trace 322 is smaller than or equal to a width of the main trace 321.
In some embodiments, the first trace 310 may be in a stripe pattern. The outer contour of the first trace 310 can be a straight line, an arc, a curve, or other shapes. The second trace 320 can refer to the first trace 310, and is not described in detail.
In some embodiments, the grid pattern includes a plurality of first traces 310 and a plurality of second traces 320, the first traces 310 and the second traces 320 are disposed at the same layer and connected to each other, and the first traces 310 and the second traces 320 extend in different directions. A plurality of second traces 320 arranged along the first direction are disposed between adjacent first traces 310. Accordingly, the first traces 310 continuously extending along the first direction are plural, and each of the first traces 310 is adjacent to a plurality of the second traces 320, so that the grid conductive structure 300 is in a grid pattern. The second traces 320 may be disposed on two opposite sides of the first trace 310; alternatively, only one side of the partial first trace 310 may be provided with the second trace 320.
In some embodiments, the first trace 310 and the second trace 320 may be disposed on a surface of a substrate. The substrate may be used to provide support for the mesh conductive structure 300. The material of the substrate may be a polymeric material. For example, the material of the substrate may be at least one of polyethylene terephthalate, polycarbonate, polymethyl methacrylate, and glass.
In some embodiments, the first trace 310 extends continuously and equally wide along the first direction. The first trace 310 width may be a dimension of the first trace 310 perpendicular to the first direction.
In some embodiments, the second trace 320 has an end trace 322 and a body trace 321 along the second direction, and a width of the end trace 322 connected to the first trace 310 is less than or equal to a width of the body trace 321. The width of the second trace 320 may be a dimension of the second trace 320 perpendicular to the second direction. Along the second direction, the widths of the second traces 320 in different areas may be different; or the width of the partial area of the second trace 320 may be the same. The second trace 320 has an end trace 322 close to the first trace 310; the end trace 322 is located between the body trace 321 and the first trace 310. It can be appreciated that in the case where the second trace 320 is located between two adjacent first traces 310, the second trace 320 can have two end traces 322 that are respectively adjacent to the two first traces 310, and a main portion trace 321 that is located between the two end traces 322. The width of the end trace 322 adjacent to the first trace 310 is less than or equal to the width of the body trace 321.
In the grid conductive structure 300 provided in the embodiment of the present specification, the width of the end portion trace 322 adjacent to the first trace 310 is less than or equal to the width of the main portion trace 321, so that the problem of large node of the grid conductive structure 300 can be alleviated, the line width of the grid conductive structure 300 can be reduced, and the light transmittance of the grid conductive structure 300 can be improved. When the method is applied to a display scene, the node visibility caused by overlarge nodes can be avoided, and the display effect is improved.
The grid conductive structure 300 provided in the embodiments of the present disclosure may be prepared by using any of the light masks 100 described above.
An embodiment of the present specification provides a touch module, including: the mesh conductive structure 300 of any of the above.
An embodiment of the present specification provides a display structure including: the touch module of any one of the above.
The touch module and the display module provided by the embodiments of the present specification have the same beneficial effects as the grid conductive structure 300, because the touch module and the display module include the grid conductive structure 300 provided by the above embodiments.
In the present specification, the embodiments themselves are emphasized differently from the other embodiments, and the embodiments can be explained in contrast to each other. Any combination of the embodiments in this specification based on general technical common knowledge by those skilled in the art is encompassed in the disclosure of the specification.
The features of the above embodiments may be arbitrarily combined, and for the sake of brevity, all possible combinations of the features in the above embodiments are not described, but should be construed as being within the scope of the present specification as long as there is no contradiction between the combinations of the features.
The above description is only a few embodiments of the present disclosure, and should not be taken as limiting the present disclosure, and any modifications, equivalents and the like that are within the spirit and principle of the present disclosure should be included in the disclosure of the present disclosure.
Claims (10)
1. The photomask comprises a substrate layer and a pattern layer, wherein the substrate layer provides support for the pattern layer, and the pattern layer is in a grid pattern; wherein the grid pattern comprises a plurality of first band patterns and a plurality of second band patterns;
the first strip-shaped pattern extends continuously along a first direction with equal width;
the second strip-shaped patterns extend along a second direction different from the first direction, and a plurality of second strip-shaped patterns arranged along the first direction are arranged between every two adjacent first strip-shaped patterns; along the second direction, the second strip-shaped pattern has a main body part and an end part connected with the first strip-shaped pattern, and the width of the end part is smaller than that of the main body part.
2. The mask according to claim 1, wherein a hollow area is formed between two adjacent first stripe patterns and two adjacent second stripe patterns connected with the two adjacent first stripe patterns; wherein, along the extending direction of the first belt-shaped pattern, the distance between the main body parts is smaller than the distance between the end parts.
3. The optical cover of claim 1, wherein the end portion has an axis of symmetry parallel to the second direction.
4. The mask of claim 1, wherein the width of the end portion gradually decreases in a direction approaching the first striped pattern.
5. The mask of claim 1 wherein said ends have a smooth outer profile in a direction proximate to said first band pattern.
6. The mask of claim 1 wherein the end portion has an outer contour shape that is a straight line or an arc in a direction that is closer to the first band pattern.
7. The photomask comprises a substrate layer and a pattern layer, wherein the substrate layer provides support for the pattern layer, and the pattern layer is in a grid pattern; wherein the grid pattern comprises a plurality of first strip patterns and a plurality of second strip patterns;
the first strip-shaped pattern extends continuously along a first direction with equal width;
the second strip-shaped patterns extend along a second direction different from the first direction, and a plurality of second strip-shaped patterns arranged along the first direction are arranged between every two adjacent first strip-shaped patterns; along the second direction, the second strip-shaped pattern is provided with a main body part and at least one end part, the end part is positioned between the main body part and the first strip-shaped pattern, a space is arranged between the end part and the first strip-shaped pattern, and the size of the space is 0.035-0.0625mm.
8. A grid conducting structure, made using the mask of any one of claims 1 to 7, the grid conducting structure comprising:
the first routing and the second routing are arranged on the same layer and are connected with each other;
the first routing line corresponds to the first strip-shaped pattern of the photomask, and the first routing line continuously extends along a first direction with equal width;
the second routing lines correspond to second strip patterns of the photomask, the second routing lines extend along a second direction different from the first direction, a plurality of second routing lines arranged along the first direction are arranged between adjacent first routing lines, and each first routing line is adjacent to the plurality of second routing lines along the first direction; along the second direction, the second wire is provided with a main body wire and an end wire connected with the first wire, and the width of the end wire is smaller than or equal to that of the main body wire.
9. A touch module, comprising: the mesh conductive structure of claim 8.
10. A display module, comprising: the touch module of claim 9.
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| CN202221040607.9U CN217822809U (en) | 2022-04-29 | 2022-04-29 | Light shield, grid conductive structure, touch module and display module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114914252A (en) * | 2022-04-29 | 2022-08-16 | 无锡变格新材料科技有限公司 | Photomask, touch module, display module, grid conductive structure and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114914252A (en) * | 2022-04-29 | 2022-08-16 | 无锡变格新材料科技有限公司 | Photomask, touch module, display module, grid conductive structure and preparation method thereof |
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