CN101807539A - Method for manufacturing insulation layer of touch panel - Google Patents
Method for manufacturing insulation layer of touch panel Download PDFInfo
- Publication number
- CN101807539A CN101807539A CN200910006969A CN200910006969A CN101807539A CN 101807539 A CN101807539 A CN 101807539A CN 200910006969 A CN200910006969 A CN 200910006969A CN 200910006969 A CN200910006969 A CN 200910006969A CN 101807539 A CN101807539 A CN 101807539A
- Authority
- CN
- China
- Prior art keywords
- layer
- time
- insulation layer
- contact panel
- transparency conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Manufacturing Of Electric Cables (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
The invention relates to a method for manufacturing an insulation layer of a touch panel, which comprises the following steps of: plating a first transparent conducting layer on a substrate, cleaning for the first time, then coating a first photoresist layer to generate a conductive circuit graphic, developing for the first time, then etching and decoating the photoresist layer, cleaning for the second time to expose the conductive circuit, coating an organic insulation layer on the first transparent conducting layer, developing for the second time, then plating a second transparent conducting layer on the organic insulation layer, cleaning for the third time, coating a second photoresist layer on the second transparent conducting layer to generate another required conductive circuit graphic, and finally carrying out the third development on the conductive circuit graphic on the photoresist layer with a developer, therefore, the invention achieves the effects of reducing processing procedures and lowering cost when being used for manufacturing the insulation layer of the touch panel.
Description
Technical field
The present invention relates to a kind of method for manufacturing insulation layer of contact panel, particularly a kind of contact panel method for manufacturing insulation layer that reduces procedure, promotes the product fine rate and reduce cost.
Background technology
At present, the insulating barrier of general existing contact panel is when making, at least need carry out: glass substrate → indium oxide coating → cleaning → photoresist coating → development → etching → stripping → silicon dioxide insulating layer plated film → cleaning → photoresist coating → development → BOE etching or dry ecthing → stripping → indium oxide coating → cleaning → photoresist coating → development → steps such as etching → stripping, finish the insulating barrier of contact panel thus and make, wherein said BOE etching is meant Buffered Oxide Etch (BOE) buffer oxide etch.
Though above-mentioned each step of carrying can be finished the insulating barrier of contact panel and make, but during owing to this silicon dioxide insulating layer plated film, also must be through cleaning, the photoresist coating, develop and steps such as BOE etching or dry ecthing, therefore make that the formation speed of silicon dioxide insulating layer is slower, and when carrying out BOE etching or dry ecthing in this step, not only can make the course of processing comparatively dangerous, more can produce harmful effect to environment, when causing existing contact panel insulating barrier to be made, its correlation step is comparatively complicated, cause the waste of man-hour and operation, make that simultaneously the cost when making increases; What therefore, the production method of above-mentioned existing contact panel insulating barrier can't realistic use is required.
Summary of the invention
Therefore, main purpose of the present invention is, when making the insulating barrier of contact panel, reaches the effect that reduces procedure and reduce cost.
In order to achieve the above object, the invention provides a kind of method for manufacturing insulation layer of contact panel, it consists predominantly of the following step:
Step 1: get a base material, first transparency conducting layer is established in plating on described base material, and carries out the first time and clean;
Step 2: on described first transparency conducting layer, carry out the coating of the photoresist first time (photoresist) layer, to produce required conductive circuit pattern;
Step 3: with developer the conductive circuit pattern on the photoresist layer is carried out the first time and develop, on the photoresist layer, carry out etching afterwards again;
Step 4: treat to carry out stripping after the etching, be used for the photoresist on the conductive circuit pattern is divested, exposing the conducting wire that is formed on first transparency conducting layer, and clean the second time of carrying out after photoresist divests;
Step 5: after cleaning for the second time, organic insulator is coated on first transparency conducting layer, carried out second development with developer again;
Step 6: on organic insulator, plate again afterwards and establish second transparency conducting layer, and clean for the third time;
Step 7: on described second transparency conducting layer, carry out the photoresist layer coating second time, to produce another required conductive circuit pattern; And
Step 8: with developer the conductive circuit pattern on the step 7 photoresist layer is developed for the third time more afterwards.
Preferably, described base material be glass substrate (Glass substrate) or PETG (Polyethylene Terephthalate, PET).
Described first and second transparency conducting layer be selected from indium tin oxide (ITO), indium-zinc oxide (IZO) or aluminium zinc oxide (AZO) at least one of them.
Described first and second time photoresist layer coating process is selected from rotary coating, scraper type coating, roller coating or soaks (DIP) and be coated with one of them.
Described developer be potassium hydroxide, tetramethylammonium hydroxide or sodium carbonate at least one of them.
Described etching is to utilize nitric acid/hydrochloric acid, hydrochloric acid/iron chloride or oxalic acid to carry out the tin indium oxide etching, or described etching is to utilize BOE, hydrofluoric acid/ammonium fluoride to carry out the SiO 2 etch of wet type or dry type.
Described stripping is the mixed liquor that utilizes potassium hydroxide, monoethanolamine (MEA), methyl pyrrolidone (NMP) or dimethyl sulfoxide (DMSO) (DMSO) a kind of at least or MEA, NMP, DMSO.
The organic material that described organic insulator can be polymethyl methacrylate (PMMA), pi (Polyimide), phenolic resins (Novolac) or other tool insulating properties at least one of them.
In the preferred embodiments of the present invention; can comply with the required protective layer that is provided with on described second transparency conducting layer; can be used as the protection of conductive circuit pattern, described protective layer can be polymethyl methacrylate (PMMA), pi (Polyimide), phenolic resins (Novolac) or other tool insulating properties organic materials at least one of them.
The invention has the beneficial effects as follows: the method for manufacturing insulation layer of contact panel of the present invention is to have replaced traditional plated film SiO in the mode that is coated with the insulation macromolecular material
2With etching SiO
2Operation when making the insulating barrier of contact panel, reaches the effect that reduces procedure, promotes yield and reduce cost, so make the present invention more progressive, more practical, more meet the required of user.
Description of drawings
Fig. 1 is a schematic flow sheet of the present invention;
Fig. 2 is the schematic diagram of step 1 of the present invention;
Fig. 3 is the schematic diagram of step 2 of the present invention;
Fig. 4 is the schematic diagram of step 3 of the present invention;
Fig. 5 is the schematic diagram of step 4 of the present invention;
Fig. 6 is the schematic diagram of step 5 of the present invention;
Fig. 7 is the schematic diagram of step 6 of the present invention;
Fig. 8 is the schematic diagram of step 7 of the present invention;
Fig. 9 is the schematic diagram of step 8 of the present invention;
Figure 10 is another embodiment of the present invention schematic diagram.
Description of reference numerals: 1-base material; 10-cleans for the first time; 11-photoresist layer coating for the first time; 12-develops for the first time; The 13-etching; The 14-stripping; 15-cleans for the second time; The 16-second development; 17-cleans for the third time; 18-photoresist layer coating for the second time; 19-develops for the third time; 2-first transparency conducting layer; 3 one organic insulators; 4-second transparency conducting layer; The 5-protective layer.
Embodiment
Below in conjunction with accompanying drawing, be described in more detail with other technical characterictic and advantage the present invention is above-mentioned.
Fig. 1-schematic diagram and another embodiment of the present invention schematic diagram that is respectively schematic flow sheet of the present invention, step 1～step 8 of the present invention shown in Figure 10.As shown in the figure: the method for manufacturing insulation layer of a kind of contact panel provided by the invention, can when making the insulating barrier of contact panel, reach the effect that reduces procedure, promotes yield and reduce cost, it comprises the following step at least:
Step 1: get one and can be glass substrate or be PETG (Polyethylene Terephthalate, PET) base material 1, first transparency conducting layer 2 is established in plating on this base material 1, and carry out cleaning 10 the first time, wherein this first transparency conducting layer 2 is selected from indium tin oxide (ITO), indium-zinc oxide (IZO) or aluminium zinc oxide (AZO) one of them (as shown in Figure 2) at least.
Step 2: on this first transparency conducting layer 2, carry out the photoresist layer coating first time 11, to produce required conductive circuit pattern (as shown in Figure 3) in modes such as rotary coating, scraper type coating, roller coating or DIP coatings.
Step 3: the conductive circuit pattern on the photoresist layer is carried out developing 12 first time with developer, on the photoresist layer, carry out etching 13 afterwards again, wherein this developer can be potassium hydroxide, tetramethylammonium hydroxide or sodium carbonate at least one of them, and can utilize nitric acid/hydrochloric acid, hydrochloric acid/iron chloride or oxalic acid to carry out the tin indium oxide etching during etching 13, perhaps can utilize BOE, hydrofluoric acid/ammonium fluoride to carry out the SiO 2 etch (as shown in Figure 4) of wet type or dry corrosion.
Step 4: treat to utilize after the etching potassium hydroxide, monoethanolamine (MEA), methyl pyrrolidone (NMP), dimethyl sulfoxide (DMSO) (DMSO) or MEA, NMP, DMSO mixed liquor one of them carry out stripping 14, in order to the photoresist on the conductive circuit pattern is divested, exposing the conducting wire that is formed on first transparency conducting layer 2, and cleaned for 15 (as shown in Figure 5) second time of carrying out after photoresist divests.
Step 5: after cleaning 15 for the second time, organic insulator 3 is coated on first transparency conducting layer 2, and this organic insulator 3 can be polymethyl methacrylate (PMMA), pi (Polyimide), phenolic resins (Novolac) or other tool insulating properties organic materials at least one of them, carry out second development 16 (as shown in Figure 6) with at least a in potassium hydroxide, tetramethylammonium hydroxide or the sodium carbonate as developer again.
Step 6: on organic insulator 3, plate again afterwards and establish one second transparency conducting layer 4, and clean 17 for the third time, wherein this second transparency conducting layer 4 is selected from indium tin oxide (ITO), indium-zinc oxide (IZO) or aluminium zinc oxide (AZO) one of them (as shown in Figure 7) at least.
Step 7: on this second transparency conducting layer 4, carry out the photoresist layer coating second time 18, to produce another required conductive circuit pattern (as shown in Figure 8) in modes such as rotary coating, scraper type coating, roller coating or DIP coatings.
Step 8: with developer the conductive circuit pattern on the step 7 photoresist layer was developed for 19 (as shown in Figure 9) for the third time more afterwards.
So, reach the method for manufacturing insulation layer of contact panel, can reduce the procedure when making via above-mentioned step.
In addition; when the present invention with each above-mentioned step after the making of finishing first transparency conducting layer 2, organic insulator 3 and second transparency conducting layer 4 on the base material 1; can further be provided with a protective layer 5 in this second transparency conducting layer 4; and this protective layer 5 can be polymethyl methacrylate (PMMA), pi (Polyimide), phenolic resins (Novolac) or other tool insulating properties organic materials at least one of them; be used as the protection (as shown in figure 10) of conductive circuit pattern when using, so that the present invention can more realistic use is required.
In sum, the method for manufacturing insulation layer of contact panel of the present invention can reach the effect that reduces procedure, promotes yield and reduce cost when making the insulating barrier of contact panel, so make the present invention more progressive, more practical, more meet the required of user.
The above only is preferred embodiment of the present invention, only is illustrative for the purpose of the present invention, and nonrestrictive.Those skilled in the art is understood, and can carry out many changes to it in the spirit and scope that claim of the present invention limited, revise, even equivalence, but all will fall within the scope of protection of the present invention.
Claims (10)
1. the method for manufacturing insulation layer of a contact panel is characterized in that it comprises the following step:
Step 1: get a base material, first transparency conducting layer is established in plating on described base material, and carries out the first time and clean;
Step 2: on described first transparency conducting layer, carry out the photoresist layer coating first time, to produce required conductive circuit pattern;
Step 3: with developer the conductive circuit pattern on the photoresist layer is carried out the first time and develop, on the photoresist layer, carry out etching afterwards again;
Step 4: treat to carry out stripping after the etching, be used for the photoresist on the conductive circuit pattern is divested, exposing the conducting wire that is formed on first transparency conducting layer, and clean the second time of carrying out after photoresist divests;
Step 5: after cleaning for the second time, organic insulator is coated on first transparency conducting layer, carried out second development with developer again;
Step 6: on organic insulator, plate again afterwards and establish second transparency conducting layer, and clean for the third time;
Step 7: on described second transparency conducting layer, carry out the photoresist layer coating second time, to produce another required conductive circuit pattern; And
Step 8: with developer the conductive circuit pattern on the step 7 photoresist layer is developed for the third time more afterwards.
2. the method for manufacturing insulation layer of contact panel according to claim 1 is characterized in that described base material is glass substrate or PETG.
3. the method for manufacturing insulation layer of contact panel according to claim 1, it is characterized in that described first and second transparency conducting layer be selected from indium tin oxide, indium-zinc oxide or aluminium zinc oxide at least one of them.
4. the method for manufacturing insulation layer of contact panel according to claim 1 is characterized in that described first and second time photoresist layer coating is selected from rotary coating, scraper type coating, roller coating or DIP and is coated with one of them.
5. the method for manufacturing insulation layer of contact panel according to claim 1, it is characterized in that described developer be potassium hydroxide, tetramethylammonium hydroxide or sodium carbonate at least one of them.
6. the method for manufacturing insulation layer of contact panel according to claim 1 is characterized in that described etching is to utilize nitric acid/hydrochloric acid, hydrochloric acid/iron chloride or oxalic acid to carry out the tin indium oxide etching.
7. the method for manufacturing insulation layer of contact panel according to claim 1 is characterized in that described etching is to utilize BOE, hydrofluoric acid/ammonium fluoride to carry out the SiO 2 etch of wet type or dry type.
8. the method for manufacturing insulation layer of contact panel according to claim 1, it is characterized in that described stripping is to utilize potassium hydroxide, monoethanolamine, methyl pyrrolidone or dimethyl sulfoxide (DMSO) at least a, or the mixed liquor of monoethanolamine, methyl pyrrolidone or dimethyl sulfoxide (DMSO) carries out.
9. the method for manufacturing insulation layer of contact panel according to claim 1, it is characterized in that described organic insulator can be polymethyl methacrylate, pi, phenolic resins or other tool insulating properties organic materials at least one of them.
10. the method for manufacturing insulation layer of contact panel according to claim 1; it is characterized in that on described second transparency conducting layer according to the required protective layer that is provided with; can be used as the protection of conductive circuit pattern, described protective layer can be polymethyl methacrylate, pi, phenolic resins or other tool insulating properties organic materials at least one of them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910006969A CN101807539A (en) | 2009-02-18 | 2009-02-18 | Method for manufacturing insulation layer of touch panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910006969A CN101807539A (en) | 2009-02-18 | 2009-02-18 | Method for manufacturing insulation layer of touch panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101807539A true CN101807539A (en) | 2010-08-18 |
Family
ID=42609269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910006969A Pending CN101807539A (en) | 2009-02-18 | 2009-02-18 | Method for manufacturing insulation layer of touch panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101807539A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569538A (en) * | 2010-12-22 | 2012-07-11 | 上海蓝光科技有限公司 | Stripping method for use during manufacturing of light-emitting diode chip electrode |
| CN106537300A (en) * | 2014-03-25 | 2017-03-22 | 3M创新有限公司 | Method of selectively etching metal layer from microstructure |
| CN108321088A (en) * | 2018-02-05 | 2018-07-24 | 京东方科技集团股份有限公司 | Manufacturing method, touch base plate and the display device of touch base plate |
| CN114927533A (en) * | 2022-04-29 | 2022-08-19 | 无锡变格新材料科技有限公司 | Grid conductive structure, preparation method thereof, touch module and display module |
-
2009
- 2009-02-18 CN CN200910006969A patent/CN101807539A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569538A (en) * | 2010-12-22 | 2012-07-11 | 上海蓝光科技有限公司 | Stripping method for use during manufacturing of light-emitting diode chip electrode |
| CN106537300A (en) * | 2014-03-25 | 2017-03-22 | 3M创新有限公司 | Method of selectively etching metal layer from microstructure |
| CN108321088A (en) * | 2018-02-05 | 2018-07-24 | 京东方科技集团股份有限公司 | Manufacturing method, touch base plate and the display device of touch base plate |
| WO2019148749A1 (en) * | 2018-02-05 | 2019-08-08 | Boe Technology Group Co., Ltd. | Touch substrate, manufacturing method thereof and display apparatus |
| US11281098B2 (en) | 2018-02-05 | 2022-03-22 | Hefei Xinsheng Photoelectric Technology Co., Ltd. | Touch substrate, manufacturing method thereof and display apparatus |
| CN114927533A (en) * | 2022-04-29 | 2022-08-19 | 无锡变格新材料科技有限公司 | Grid conductive structure, preparation method thereof, touch module and display module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6024059B2 (en) | Touch screen and manufacturing method thereof | |
| US10503325B2 (en) | Display device, touch panel and method for manufacturing the same | |
| CN104820533B (en) | Touch substrate and preparation method thereof, display device | |
| JP7026785B2 (en) | High-strength anti-fingerprint glass, its manufacturing method, exterior parts of high-strength anti-fingerprint glass and its manufacturing method | |
| CN103257748B (en) | Contact panel and manufacture method | |
| CN104022017B (en) | Method of graphene patterning and manufacturing method of display substrate | |
| CN105513973B (en) | A kind of production method of blind hole | |
| CN101807539A (en) | Method for manufacturing insulation layer of touch panel | |
| CN103235659A (en) | Touch panel and manufacturing method and display device thereof | |
| CN108089777A (en) | A kind of production method of OGS touch screen | |
| WO2012132935A1 (en) | Method for manufacturing cover glass for electronic device, cover glass for electronic device, glass plate for cover glass used for electronic device, and method for manufacturing touch sensor module | |
| CN103744565A (en) | Touch screen and manufacturing method thereof | |
| CN104777930A (en) | OGS (One Glass Solution) touch screen and manufacturing method thereof, OGS touch device | |
| CN105655295A (en) | Array substrate and manufacturing method thereof as well as display device | |
| CN102681714B (en) | Manufacturing method of touch sensor and display equipment | |
| CN102915165A (en) | Double-side ITO (indium tin oxides) etching method of touch screen | |
| CN108598039B (en) | Display substrate, manufacturing method thereof and display device | |
| CN104571751B (en) | Touch panel and the method for manufacturing touch panel | |
| JP2013006745A (en) | Method of producing cover glass for portable device | |
| CN202841679U (en) | ITO conducting film-based bus electrode | |
| CN103970390A (en) | OGS capacitive touch screen of metal frame bridge, and machining technology of OGS capacitive touch screen | |
| CN106201079A (en) | The manufacture method of a kind of touching display screen and touching display screen | |
| CN203894732U (en) | OGS capacitive touch screen of ITO bridge | |
| CN203799337U (en) | Touch screen | |
| CN107134434A (en) | A kind of method, array base palte and display panel for improving array base palte mask charge stripping efficiency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100818 |