CN114927494A - Packaging structure of double-sided heat dissipation module and electric automobile comprising same - Google Patents

Packaging structure of double-sided heat dissipation module and electric automobile comprising same Download PDF

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Publication number
CN114927494A
CN114927494A CN202210451654.0A CN202210451654A CN114927494A CN 114927494 A CN114927494 A CN 114927494A CN 202210451654 A CN202210451654 A CN 202210451654A CN 114927494 A CN114927494 A CN 114927494A
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China
Prior art keywords
bridge arm
dbc
conductive layer
heat dissipation
double
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CN202210451654.0A
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Chinese (zh)
Inventor
李道会
齐放
赵子豪
张铃
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Weilai Power Technology Hefei Co Ltd
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Weilai Power Technology Hefei Co Ltd
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Priority to CN202210451654.0A priority Critical patent/CN114927494A/en
Publication of CN114927494A publication Critical patent/CN114927494A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • H01L23/49844Geometry or layout for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention discloses a packaging structure of a double-sided heat dissipation module and an electric automobile comprising the same. The packaging structure comprises a bottom DBC lining plate, a power chip attached to the bottom DBC lining plate, a cushion block and a top DBC lining plate. The power chip and the cushion block are arranged between the top layer DBC lining plate and the bottom layer DBC lining plate, so that the packaging structure has a sandwich structure. The power chips comprise a first group of power chips and a second group of power chips which form a half-bridge circuit, a plurality of power chips in each group of power chips are connected in parallel, and the first group of power chips and the second group of power chips form an upper bridge arm and a lower bridge arm of the half-bridge circuit respectively. The cushion blocks comprise an upper bridge arm cushion block, a lower bridge arm cushion block and an AC cushion block for electrically connecting the upper bridge arm and the lower bridge arm, and the upper bridge arm cushion block and the lower bridge arm cushion block are respectively connected to the power chips of the upper bridge arm and the lower bridge arm. The packaging structure of the invention adopts the AC cushion block with a sectional type structure, thereby realizing the obvious improvement of the reliability of the double-sided heat dissipation module.

Description

Packaging structure of double-sided heat dissipation module and electric automobile comprising same
Technical Field
The invention relates to the field of power module packaging, in particular to a packaging structure of a double-sided heat dissipation module and an electric automobile comprising the same.
Background
In the automotive, aerospace and other industries, environmentally friendly electric traction systems are being developed, in which inverters (sometimes also including converters) are usually manufactured by using power electronic power modules, which makes the demand of the power modules increasingly high.
In order to meet customer demands and the increasing power level demands of large vehicles, industry is constantly striving to increase the power density of power modules. However, an increase in power density increases the operating temperature, which may threaten the reliability of the power module. In addition, the operating temperature of the wide bandgap semiconductor device is greatly increased compared with that of the conventional silicon-based semiconductor device. An excellent solution to this problem is a double-sided heat dissipation module package structure, which aims to increase the heat dissipation area and thus reduce the thermal resistance of the power module. However, the Direct Bonded Copper (DBC) substrate of the double-sided heat dissipation module has a "copper-ceramic-copper" structure, and due to different Coefficients of Thermal Expansion (CTEs) between adjacent layers, the DBC substrate may warp after a reflow soldering process is performed, so that a chip may deform accordingly, and extremely high stress is generated on the surface, thereby endangering the reliability of the module; meanwhile, the AC spacer block located between the top DBC backing plate and the bottom DBC backing plate also has the above-mentioned problem of thermo-mechanical stress, and the AC spacer block generally has a large welding area, thereby causing poor welding effect, which threatens reliable connection between the spacer block and the DBC backing plate.
Therefore, the problem of warping of the DBC liner plate of the double-sided heat dissipation module and the problem of connection of the AC cushion block are solved, otherwise, the reliability of the module is difficult to further improve.
Disclosure of Invention
The invention aims to provide a packaging structure of a double-sided heat dissipation module and an electric vehicle comprising the same, which can overcome the defects, and is beneficial to reducing the thermal mechanical stress on the surface of a welding layer, relieving the flow equalization problem under the condition of parallel connection of multiple pipes, improving the welding effect and further realizing the remarkable improvement of the reliability of the double-sided heat dissipation module.
Furthermore, the present invention is also directed to solve or alleviate other technical problems occurring in the prior art.
The present invention solves the above problems by providing a package structure of a double-sided heat dissipation module and an electric vehicle including the same.
According to a first aspect of the present invention, a package structure of a double-sided heat dissipation module is provided, which includes a bottom DBC substrate, a power chip attached to the bottom DBC substrate, a spacer, and a top DBC substrate, wherein the power chip and the spacer are both disposed between the top DBC substrate and the bottom DBC substrate, such that the package structure has a sandwich structure; the power chips comprise a first group of power chips and a second group of power chips which form a half-bridge circuit, wherein a plurality of power chips in each group of power chips are connected in parallel, and the first group of power chips and the second group of power chips respectively form an upper bridge arm and a lower bridge arm of the half-bridge circuit; the cushion blocks comprise an upper bridge arm cushion block, a lower bridge arm cushion block and an AC cushion block used for electrically connecting the upper bridge arm and the lower bridge arm, wherein the upper bridge arm cushion block and the lower bridge arm cushion block are respectively connected to the power chips of the upper bridge arm and the lower bridge arm; wherein the AC spacer block has a segmented structure.
Optionally, according to an embodiment of the invention, the AC pad has the same length as the power chip and is placed in alignment with the power chip.
Optionally, according to an embodiment of the present invention, the bottom DBC liner and the top DBC liner each include a first conductive layer, a second conductive layer, and an insulating layer disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer is printed with a circuit pattern.
Optionally, according to an embodiment of the invention, the thicknesses of the first and second conductive layers are different from each other.
Optionally, according to an embodiment of the invention, a thickness of the first conductive layer is 1.1 to 1.5 times a thickness of the second conductive layer.
Alternatively, according to an embodiment of the present invention, the first conductive layer and the second conductive layer are made of copper, and the insulating layer is made of alumina, aluminum nitride, or silicon nitride ceramic.
Optionally, according to an embodiment of the present invention, the package structure further includes a power terminal and a driving terminal, wherein the power terminal includes a DC + terminal, a DC-terminal and an AC terminal, and the driving terminal includes an upper leg source driving terminal, an upper leg gate driving terminal, a lower leg source driving terminal and a lower leg gate driving terminal.
Optionally, according to an embodiment of the invention, the power chips comprise sources and gates and the first conductive layer of the underlying DBC substrate comprises a plurality of copper blocks, wherein the sources of the power chips of the upper leg are connected to respective copper blocks by upper leg source bond wires and then to the upper leg source drive terminals, and wherein the gates of the power chips of the upper leg are connected to respective copper blocks by upper leg gate bond wires and then to the upper leg gate drive terminals; and wherein the sources of the power chips of the lower leg are connected to respective copper blocks by lower leg source bond wires and the gates of the power chips of the lower leg are connected to respective copper blocks by lower leg gate bond wires.
Optionally, according to an embodiment of the invention, the lower surfaces of the power chips and the AC pads of the lower leg are connected to respective copper blocks by solder, and wherein the lower surfaces of the power chips of the upper leg are connected to respective copper blocks by solder and in turn to the DC + terminal.
Optionally, in accordance with an embodiment of the present invention, the first conductive layer of the top layer DBC patch includes a plurality of copper blocks, wherein an upper surface of the lower leg block is connected to a respective copper block by solder and in turn connected to the DC-terminal, and wherein upper surfaces of the AC block and the upper leg block are connected to a respective copper block by solder and in turn connected to the AC terminal.
Optionally, according to an embodiment of the invention, the pad is made of copper molybdenum alloy or graphite copper.
According to a second aspect of the present invention, there is provided an electric vehicle, characterized in that the electric vehicle includes the package structure of the double-sided heat dissipation module according to the first aspect of the present invention.
Compared with the prior art, the packaging structure of the double-sided heat dissipation module and the electric automobile comprising the packaging structure have the following beneficial effects: by adopting the AC cushion block with the sectional type structure, the welding area of the cushion block is reduced, the welding effect of the cushion block is improved, the flow equalizing effect is better, and meanwhile, the thermal mechanical stress on the surface of a welding layer between the cushion block and the DBC lining plate is greatly reduced, so that the welding reliability is greatly improved, and the service life of a module is prolonged; in addition, through using the DBC welt that upper and lower conducting layer thickness is different, the DBC welt warpage after going through the reflow soldering process is showing and is reducing to further promote two-sided heat dissipation module's reliability.
The details of one or more embodiments of the invention are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the invention will be apparent from the description and drawings, and from the claims.
Drawings
The invention may be more particularly described, by way of example, with reference to the accompanying drawings, which are not drawn to scale, and in which:
fig. 1 is a perspective view of an external structure of a package structure of a double-sided heat dissipation module according to an embodiment of the present invention;
FIG. 2 is a perspective view of the internal structure of a package structure of a double-sided heat dissipation module according to an embodiment of the present invention, with the top DBC backing removed for clarity;
FIG. 3 is a top view of the internal structure of a package structure of a double-sided heat dissipation module according to an embodiment of the present invention, with the top DBC backing removed for clarity;
fig. 4 is a schematic diagram of a bottom DBC liner of a package structure of a double-sided heat dissipation module according to an embodiment of the invention;
FIG. 5 is a schematic diagram of a top DBC backing plate of a package structure of a double-sided heat dissipation module according to an embodiment of the invention;
fig. 6 is a schematic diagram of a half-bridge circuit corresponding to a package structure of a double-sided heat dissipation module according to an embodiment of the invention; and
fig. 7 is a partial side view of an underlying DBC backing plate of a package structure of a double-sided heat dissipation module according to an embodiment of the invention.
Throughout the drawings, the same reference numerals are used to designate the same elements or structures.
Parts list
1 top layer DBC lining board
2 lower bridge arm source electrode driving terminal
3 lower bridge arm grid driving terminal
4 main power output AC terminal
5 Upper bridge arm source electrode driving terminal
6 upper bridge arm grid driving terminal
7 bottom layer DBC lining board
8 main power DC-terminal
9 main power DC + terminal
10 lower bridge arm source electrode bonding wire
11 lower bridge arm cushion block
12 AC cushion block
13 upper bridge arm source electrode bonding wire
14 upper bridge arm cushion block
15 lower bridge arm grid bonding wire
16 upper bridge arm switch tube
17 upper bridge arm grid bonding wire
18 lower bridge arm switch tube
19 first copper block
20 second copper block
21 third copper block
22 AC2 copper block
23 fourth copper block
24 fifth copper block
25 DC + copper block
26 sixth copper block
27 AC1 copper block
28 seventh copper block
29 eighth copper block
30 DC-copper block
31 first conductive layer
32 insulating layer
33 second conductive layer
100 package structure.
Detailed Description
It is easily understood that, according to the technical solution of the present invention, a person skilled in the art can propose various alternative structural modes and implementation modes without changing the spirit of the present invention. Therefore, the following detailed description and the accompanying drawings are merely illustrative of the technical aspects of the present invention, and should not be construed as limiting or restricting the technical aspects of the present invention.
The terms of orientation of up, down, left, right, front, back, top, bottom, and the like referred to or may be referred to in this specification are defined relative to the configuration shown in the drawings, and are relative terms, and thus may be changed correspondingly according to the position and the use state of the device. Therefore, these and other directional terms should not be construed as limiting terms. Furthermore, the terms "first," "second," "third," and the like, are used for descriptive and distinguishing purposes only and are not to be construed as indicating or implying relative importance of the respective components.
Referring first to fig. 1, there is shown an external structural perspective view of a package structure 100 of a double-sided heat dissipation module according to an embodiment of the present invention. As shown in fig. 1, the package structure 100 includes a top DBC substrate 1 and a bottom DBC substrate 7 arranged in parallel, spaced apart from each other by a distance such that a gap is formed therebetween for accommodating various components such as a power chip, a pad block, and the like.
The package structure 100 further includes a plurality of terminals extending outward from both ends thereof, including power terminals and driving terminals. In the embodiment shown in fig. 1, the power terminals of the package structure 100 include a main power output AC terminal 4, a main power DC-terminal 8, and a main power DC + terminal 9, all of which are plate-like in configuration. As shown in fig. 1, the AC terminal 4 is arranged at one end of the package structure 100, and the DC-terminal 8 and the DC + terminal 9 are arranged at the opposite other end of the package structure 100, wherein one DC + terminal 9 is arranged on each side of the DC-terminal 8. In the embodiment shown in fig. 1, the drive terminals of the package structure 100 include a lower arm source drive terminal 2, a lower arm gate drive terminal 3, an upper arm source drive terminal 5, and an upper arm gate drive terminal 6, which are all in a rod-like configuration and together constitute a drive circuit terminal of the package structure 100. As shown in fig. 1, the four driving terminals of the package structure 100 are all arranged at the same end of the package structure 100. In this embodiment, four drive terminals are each arranged at the same end as the AC terminal 4, with the lower arm source drive terminal 2 and the lower arm gate drive terminal 3 being arranged on one side of the AC terminal 4, and the upper arm source drive terminal 5 and the upper arm gate drive terminal 6 being arranged on the opposite side of the AC terminal 4. However, it should be understood that power and drive terminals having different shapes, numbers, or arrangements may be employed depending on the power requirements of the package structure 100.
Turning now to fig. 2 and 3, which illustrate a perspective view and a top view, respectively, of the internal structure of a package structure 100 of a double-sided heat dissipation module according to an embodiment of the present invention, wherein the top layer DBC substrate 1 is removed for clarity. As described above, the package structure 100 includes various components, including power chips and pads, in the gap between the top DBC substrate 1 and the bottom DBC substrate 7. The power chip and the pads are disposed between the top DBC substrate 1 and the bottom DBC substrate 7, so that the package structure 100 has a sandwich structure.
The power chip of package structure 100 includes an upper arm switch tube 16 and a lower arm switch tube 18 forming a half-bridge circuit, which form an upper arm and a lower arm of the half-bridge circuit, respectively. In the embodiment shown in fig. 2 and 3, upper leg switching transistor 16 and lower leg switching transistor 18 each comprise two MOSFET (metal-oxide semiconductor field effect transistor) chips connected in parallel. However, it should be understood that upper arm switch tube 16 and lower arm switch tube 18 may each include any suitable number of chips connected in parallel, depending on the particular application. As shown in fig. 2 and 3, the upper arm switch tube 16 and the lower arm switch tube 18 are both attached to the bottom layer DBC liner plate 7, thereby forming a non-flip-chip packaging structure.
With further reference to fig. 2 and 3, the pads of package structure 100 include an upper arm pad 14, a lower arm pad 11, and an AC pad 12 for electrically connecting the upper and lower arms of the half-bridge circuit. In an embodiment of the present invention, the pads 11, 12, 14 of the package structure 100 are made of copper-molybdenum alloy or graphite-copper. As shown, upper and lower arm pads 14, 11 are connected to upper and lower arm switching tubes 16, 18, respectively. Specifically, the sources of the upper arm switching tube 16 and the lower arm switching tube 18 are welded to the lower surfaces of the upper arm pad 14 and the lower arm pad 11, respectively. In order to realize kelvin connection, the sources of the upper arm switch tube 16 and the lower arm switch tube 18 respectively lead out source signals to corresponding copper blocks arranged on the bottom layer DBC lining plate 7 through the corresponding upper arm source bonding wire 13 and the corresponding lower arm source bonding wire 10. In addition, the gates of the upper arm switch tube 16 and the lower arm switch tube 18 are respectively connected to the corresponding copper blocks arranged on the bottom layer DBC substrate 7 through the corresponding upper arm gate bonding wire 17 and lower arm gate bonding wire 15.
In the package structure shown in fig. 2 and 3, the AC pad 12 is disposed between the upper arm and the lower arm of the half-bridge circuit to electrically connect the upper arm switching tube 16 and the lower arm switching tube 18. In addition, the AC pod 12 also functions to connect the top DBC backing 1 and the bottom DBC backing 7 to enable electrical connection and heat transfer between the top DBC backing 1 and the bottom DBC backing 7.
Conventionally, the AC pods 12 are attached to the top DBC backing 1 and the bottom DBC backing 7 by a welding process. In the package structure of the prior art, the AC pad generally has a monolithic structure, so that a soldering area is large, thereby causing poor soldering effect, which threatens reliable connection between the AC pad and the top and bottom DBC pads. In response to the drawbacks of the prior art, the package structure 100 according to the present invention employs the AC pad 12 having a segmented structure, i.e., the AC pad 12 between the upper and lower bridge arms is divided into a plurality of AC pads spaced apart from each other. Preferably, the AC pad 12 has the same length as the power chip and is placed in alignment with the power chip. Specifically, in the embodiment shown in fig. 2 and 3, the package structure 100 includes two AC pods 12 spaced apart from each other, each having the same length as the upper arm switch tube 16 and the lower arm switch tube 18, and placed therebetween in alignment with the upper arm switch tube 16 and the lower arm switch tube 18, respectively. It should be understood that the segmented design of the AC pad 12 depends on the number of parallel power chips in the upper and lower legs. For example, for a double-sided heat dissipation module with N parallel tubes (where N is an integer greater than or equal to 2), N segments of blocks with the same length as the power chip may be designed to jointly form the AC block 12. Compared with the integral AC cushion block in the prior art, the sectional type AC cushion block design provided by the invention is very effective in improving the welding effect of the AC cushion block, reducing the thermal mechanical stress on the surface of a welding layer between the AC cushion block and the DBC lining plate and relieving the problem of parallel flow equalization of multiple pipes.
Reference is now made to fig. 4 and 5, which respectively illustrate schematic views of the bottom layer DBC backing 7 and the top layer DBC backing 1 of the package structure 100 of the double-sided heat dissipation module, according to an embodiment of the present invention. As shown, the bottom DBC backing 7 and the top DBC backing 1 each include a plurality of differently shaped copper blocks. The connection relationship between each power chip, pad, and power and driving terminals of the package structure 100 and the corresponding copper blocks of the bottom DBC substrate 7 and the top DBC substrate 1 will be specifically described below with reference to fig. 1 to 3.
In the embodiment shown in fig. 4, the underlying DBC substrate 7 of the package structure 100 includes eight copper blocks, namely a first copper block 19, a second copper block 20, a third copper block 21, an AC2 copper block 22, a fourth copper block 23, a fifth copper block 24, a DC + copper block 25, and a sixth copper block 26. The first copper block 19 is connected to the lower arm gate drive terminal 3; the second copper block 20 is connected to the source of the upper bridge arm switching tube 16 through an upper bridge arm source bonding wire 13 and is also connected to the upper bridge arm source driving terminal 5; the third copper block 21 is connected to the grid of the upper bridge arm switching tube 16 through an upper bridge arm grid bonding wire 17 and is also connected to the upper bridge arm grid driving terminal 6; the AC2 copper block 22 is welded with the lower surfaces of the lower bridge arm switch tube 18 and the AC cushion block 12 through welding materials; the fourth copper block 23 is connected to the grid of the lower bridge arm switching tube 18 through a lower bridge arm grid bonding wire 15; the fifth copper block 24 is connected to the source electrode of the lower bridge arm switching tube 18 through the lower bridge arm source electrode bonding wire 10; the DC + copper block 25 is welded with the lower surface of the upper bridge arm switching tube 16 through a welding material and is connected to the DC + terminal 9; the sixth copper block 26 is connected to the lower arm source drive terminal 2.
In the embodiment shown in fig. 5, the top layer DBC substrate 1 of the package structure 100 includes four copper blocks, namely an AC1 copper block 27, a seventh copper block 28, an eighth copper block 29, and a DC-copper block 30. The AC1 copper block 27 is soldered to the upper surfaces of the AC block 12 and the upper arm block 14 by solder while being connected to the AC terminal 4; the seventh copper block 28 connects the first copper block 19 and the fourth copper block 23 of the underlying DBC backing plate 7 together; the eighth copper block 29 connects the fifth copper block 24 and the sixth copper block 26 of the underlying DBC backing plate 7 together; the DC-copper block 30 is soldered to the upper surface of the lower arm pad 11 by solder and is connected to the DC-terminal 8.
Fig. 6 is a schematic diagram of a half-bridge circuit corresponding to the package structure 100 of the double-sided heat dissipation module according to an embodiment of the invention. As shown in the figure, the half-bridge circuit structure is composed of a main power DC + terminal 9, a main power DC-terminal 8, a main power output AC terminal 4, an upper arm source driving terminal 5, an upper arm gate driving terminal 6, a lower arm source driving terminal 2, a lower arm gate driving terminal 3, an upper arm switching tube 16, a lower arm switching tube 18 and electrical connections therebetween. Specifically, the upper arm switching tubes 16 constitute an upper arm of the half bridge circuit, and are connected to the upper arm source drive terminals 5, the upper arm gate drive terminals 6, the main power DC + terminals 9, and the main power output AC terminals 4; the lower bridge arm switching tubes 18 form a lower bridge arm of the half-bridge circuit, and are connected to a lower bridge arm source electrode driving terminal 2, a lower bridge arm grid electrode driving terminal 3, a main power DC-terminal 8 and a main power output AC terminal 4; the upper arm switching tube 16 and the lower arm switching tube 18 are also connected to each other.
Turning now to fig. 7, a partial side view of the underlying DBC backing plate 7 of the package structure 100 of the double-sided heat dissipation module is shown, in accordance with an embodiment of the present invention. As shown, the underlying DBC liner 7 includes a first conductive layer 31, a second conductive layer 33, and an insulating layer 32 disposed between the first conductive layer 31 and the second conductive layer 33. The first conductive layer 31 corresponds to the upper layer of the underlying DBC backing 7, which is printed with a circuit pattern consisting of a plurality of copper blocks of the underlying DBC backing 7 as described above with respect to fig. 4. The second conductive layer 33 corresponds to a lower layer of the underlying DBC pad 7, which is not printed with a circuit pattern like the first conductive layer 31. In the embodiment of the present invention, the first conductive layer 31 and the second conductive layer 33 are made of copper, preferably oxygen-free copper material, and the surfaces thereof are nickel-plated, thereby enhancing the oxidation resistance of the surfaces and facilitating wire bonding. In addition, the insulating layer 32 is made of a ceramic material, preferably aluminum oxide, aluminum nitride or silicon nitride, wherein the silicon nitride has a high yield strength, is not easily broken, and thus has higher reliability.
The thickness of the conductive layer is the most important factor in the design of the DBC liner plate, and the common thickness types of the conductive layer mainly include: 0.1 mm, 0.2 mm, 0.25 mm, 0.3 mm, 0.4 mm, 0.5 mm, etc., and the specific thickness should be selected according to the module current rating. In prior art package structures, the two conductive layers of the DBC substrate typically have the same thickness. However, since the first conductive layer 31 is printed with a circuit pattern, there are a plurality of grooves so that the copper material of the first conductive layer 31 does not completely cover the entire DBC pad, i.e., the copper-clad area is smaller than the area of the DBC pad. In contrast, the second conductive layer 33 is not printed with a circuit pattern, and thus the copper material of the second conductive layer 33 covers the entire DBC backing, i.e., the copper-clad area is equal to the area of the DBC backing. In the case where the first conductive layer 31 and the second conductive layer 33 have the same thickness, the presence of the grooves in the first conductive layer 31 causes the first conductive layer 31 and the second conductive layer 33 to have different thermal expansion rates, thereby causing a warpage phenomenon of the DBC substrate, and the chip located between the DBC substrates is also deformed accordingly, generating extremely high stress at the surface, compromising the reliability of the module.
Aiming at the defects of the prior art, the packaging structure adopts DBC liner plates with different thicknesses of the conducting layers. In an embodiment of the present invention, the thickness of the first conductive layer 31 of the underlying DBC backing 7 is greater than the thickness of the second conductive layer 33. Preferably, the thickness of the first conductive layer 31 is 1.1 to 1.5 times the thickness of the second conductive layer 33. In particular, in the embodiment shown in fig. 7, the thickness of the first conductive layer 31 is 1.25 times the thickness of the second conductive layer 33. It is to be understood that the thickness ratio of the first conductive layer 31 and the second conductive layer 33 is adjusted and determined according to the area ratio of the two copper plating layers so that the first conductive layer 31 and the second conductive layer 33 have the same or similar thermal expansion rates. Compared with the DBC lining plate with the same conductive layer thickness in the prior art, the warping degree of the DBC lining plate with the different conductive layer thicknesses provided by the invention is obviously reduced after the DBC lining plate is subjected to a reflow soldering process, so that the stress of the surface of a welding layer between the cushion block and the DBC lining plate is reduced, and the reliability of the double-sided heat dissipation module is further improved.
It is noted that although the liner configuration and conductive layer thickness optimization is discussed above with respect to the bottom layer DBC liner 7 of the package structure 100, the above discussion is equally applicable to the top layer DBC liner 1 of the package structure 100, except that the first conductive layer 31 of the top layer DBC liner 1 corresponds to the lower layer of the top layer DBC liner 1, and the second conductive layer 33 corresponds to the upper layer of the top layer DBC liner 1.
The invention also provides an electric vehicle which comprises the packaging structure 100 of the double-sided heat dissipation module according to the embodiment of the invention. In addition, the electric vehicle includes, but is not limited to, a vehicle-mounted battery, a driving motor, a charging plug, etc., and the electric energy of the vehicle-mounted battery can be used to drive the driving motor to operate, so as to provide kinetic energy for the vehicle to run.
It should be understood that all of the above preferred embodiments are exemplary and not restrictive, and that various modifications and changes in the specific embodiments described above, which would occur to persons skilled in the art upon consideration of the above teachings, are intended to be within the scope of the invention.

Claims (12)

1. A packaging structure of a double-sided heat dissipation module comprises a bottom DBC lining plate, a power chip attached to the bottom DBC lining plate, a cushion block and a top DBC lining plate, wherein the power chip and the cushion block are both arranged between the top DBC lining plate and the bottom DBC lining plate, so that the packaging structure has a sandwich structure;
the power chips comprise a first group of power chips and a second group of power chips which form a half-bridge circuit, wherein a plurality of power chips in each group of power chips are connected in parallel, and the first group of power chips and the second group of power chips respectively form an upper bridge arm and a lower bridge arm of the half-bridge circuit; and is
The cushion blocks comprise an upper bridge arm cushion block, a lower bridge arm cushion block and an AC cushion block used for electrically connecting the upper bridge arm and the lower bridge arm, wherein the upper bridge arm cushion block and the lower bridge arm cushion block are respectively connected to the power chips of the upper bridge arm and the lower bridge arm;
wherein the AC spacer block has a segmented structure.
2. The package structure of the double-sided heat dissipation module according to claim 1, wherein the AC pad has the same length as the power chip and is placed in alignment with the power chip.
3. The package structure of the double-sided heat dissipation module of claim 1, wherein the bottom-layer DBC backing and the top-layer DBC backing each comprise a first conductive layer, a second conductive layer, and an insulating layer disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer is printed with a circuit pattern.
4. The package structure of double-sided heat dissipation module according to claim 3, wherein the thicknesses of the first conductive layer and the second conductive layer are different from each other.
5. The package structure of double-sided heat dissipation module according to claim 4, wherein the thickness of the first conductive layer is 1.1-1.5 times the thickness of the second conductive layer.
6. The package structure of a double-sided heat dissipation module according to claim 3, wherein the first conductive layer and the second conductive layer are made of copper, and the insulating layer is made of alumina, aluminum nitride, or silicon nitride ceramic.
7. The package structure of double-sided heat dissipation module of claim 3, further comprising power terminals and driving terminals,
the power terminals comprise DC + terminals, DC-terminals and AC terminals, and the driving terminals comprise upper bridge arm source driving terminals, upper bridge arm grid driving terminals, lower bridge arm source driving terminals and lower bridge arm grid driving terminals.
8. The package structure of the double-sided heat dissipation module of claim 7, wherein the power chip comprises a source and a gate, and the first conductive layer of the underlying DBC liner comprises a plurality of copper blocks,
wherein the sources of the power chips of the upper leg are connected to respective copper blocks by upper leg source bond wires and then to the upper leg source drive terminals, and wherein the gates of the power chips of the upper leg are connected to respective copper blocks by upper leg gate bond wires and then to the upper leg gate drive terminals; and is
The source of the power chip of the lower bridge arm is connected to a corresponding copper block through a lower bridge arm source bonding wire, and the gate of the power chip of the lower bridge arm is connected to a corresponding copper block through a lower bridge arm gate bonding wire.
9. The package structure of the double-sided heat dissipation module of claim 8, wherein the lower surfaces of the power chips of the lower legs and the AC pads are connected to respective copper blocks by solder, and wherein the lower surfaces of the power chips of the upper legs are connected to respective copper blocks by solder and in turn are connected to the DC + terminals.
10. The package structure of double-sided heat dissipation module of claim 7, wherein the first conductive layer of the top-layer DBC backing board comprises a plurality of copper blocks,
wherein the upper surfaces of the lower arm pads are connected to respective copper blocks by solder and in turn to the DC-terminals, and wherein the AC pads and the upper surfaces of the upper arm pads are connected to respective copper blocks by solder and in turn to the AC terminals.
11. The package structure of the double-sided heat dissipation module as recited in claim 1, wherein the pad is made of copper-molybdenum alloy or graphite copper.
12. An electric vehicle, characterized in that the electric vehicle comprises a package structure of the double-sided heat dissipation module according to any one of claims 1 to 11.
CN202210451654.0A 2022-04-27 2022-04-27 Packaging structure of double-sided heat dissipation module and electric automobile comprising same Pending CN114927494A (en)

Priority Applications (1)

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CN202210451654.0A CN114927494A (en) 2022-04-27 2022-04-27 Packaging structure of double-sided heat dissipation module and electric automobile comprising same

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Application Number Priority Date Filing Date Title
CN202210451654.0A CN114927494A (en) 2022-04-27 2022-04-27 Packaging structure of double-sided heat dissipation module and electric automobile comprising same

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CN114927494A true CN114927494A (en) 2022-08-19

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