CN114907124B - 一种微波介质材料TmVO4及其制备方法 - Google Patents

一种微波介质材料TmVO4及其制备方法 Download PDF

Info

Publication number
CN114907124B
CN114907124B CN202210384760.1A CN202210384760A CN114907124B CN 114907124 B CN114907124 B CN 114907124B CN 202210384760 A CN202210384760 A CN 202210384760A CN 114907124 B CN114907124 B CN 114907124B
Authority
CN
China
Prior art keywords
dielectric material
microwave dielectric
tmvo
ball milling
hours
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210384760.1A
Other languages
English (en)
Other versions
CN114907124A (zh
Inventor
李波
谌祝廷
穆宁波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN202210384760.1A priority Critical patent/CN114907124B/zh
Publication of CN114907124A publication Critical patent/CN114907124A/zh
Application granted granted Critical
Publication of CN114907124B publication Critical patent/CN114907124B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3239—Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

本发明属于电子陶瓷及其制造领域，提供一种微波介质材料及其制备方法；所述微波介质材料为TmVO4，晶相为TmVO4，属于四方晶体结构。本发明提供一种微波介质材料在1100～1250℃烧结温度下具有低的介电损耗，Q×f值为40000～60000GHz，介电常数为11～12，谐振频率温度系数为‑35～‑50ppm/℃。该微波介质材料制备工艺简单、生产成本低，有利于实现工业化生产。

Description

一种微波介质材料TmVO4及其制备方法
技术领域
本发明属于电子陶瓷及其制造领域，具体涉及一种微波介质材料TmVO4及其制备方法。
背景技术
5G时代移动通信技术的不断发展对微波器件提出了更高的要求，低的介电损耗能够降低信号的衰减，因此研究低损耗的微波介质材料具有极大的实际应用价值。钒酸盐陶瓷的固有烧结温度低、微波介电性能优良等优点而被广泛关注。WEI LI等人在文章“Preparation,Crystal Structure and Microwave Dielectric Properties of Rare-Earth Vanadates:ReVO4(Re＝Nd,Sm)”中报道了在1160℃烧结制备出NdVO4微波介质，εr＝12、Q×f＝36440GHz、τf＝-44.3ppm/℃。但是该材料的Q×f值偏低，需研究介电损耗更低的微波介质材料。
基于上述背景，本发明提供一种微波介质材料TmVO4及其制备方法。
发明内容
本发明的目的在于提供了一种微波介质材料TmVO4及其制备方法
为实现上述目的，本发明采用的技术方案如下：
一种微波介质材料，其特征在于，所述微波介质材料的化学式为：TmVO4。
进一步的，所述微波介质材料的晶相为TmVO4，属于四方晶体结构。
进一步的，所述微波介质材料的制备方法，其特征在于，包括以下步骤：
步骤1：以V2O5、Tm2O3为原料按照化学式TmVO4的摩尔比进行配料；
步骤2：将混合料、去离子水和锆球在球磨罐中球磨6～8小时，球磨后浆料于烘箱内烘干；
步骤3：将干燥粉料过筛后，放在坩埚中于800～900℃预烧3～4小时，得到预烧粉料；
步骤4：将预烧料、去离子水和锆球在球磨罐中球磨4～6小时，球磨后浆料于烘箱内烘干；
步骤5：将干燥料通过聚乙烯醇溶液造粒，在10～20MPa干压得到生坯；
步骤6：生坯在1100～1250℃烧结4～6小时，得到所述的微波介质材料。
本发明的有益效果在于：
本发明提供一种新型的微波介质材料TmVO4，晶相为TmVO4，属于四方晶体结构。具有低的介电损耗，在1200℃的烧结温度下Q×f值为53594GHz；
本发明提供微波介质材料TmVO4，在1100℃～1250℃烧结温度下具有优良的微波介电性能：介电常数为11～12、Q×f值为40000～60000GHz、谐振频率温度系数为-35～-50ppm/℃；该微波介质材料的制备工艺简单、生产成本低，有利于实现工业化生产。
附图说明
图1为实施例3制备得微波介质材料TmVO4的XRD图。
图2为实施例3制备得微波介质材料TmVO4的SEM图。
具体实施方案
下面结合附图和实施例对本发明做进一步详细说明。
本发明共提供4个实施例，每个实施例提供的微波介质材料配方皆为TmVO4；所述微波陶瓷材料均采用如下方法进行制备：
步骤1：以V2O5、Tm2O3为原料按照化学式TmVO4的摩尔比进行配料；
步骤2：将混合料、去离子水和锆球在球磨罐中球磨6～8小时，球磨后浆料于烘箱内烘干；
步骤3：将干燥粉料过筛后，放在坩埚中于800～900℃预烧3～4小时，得到预烧粉料；
步骤4：将预烧料、去离子水和锆球在球磨罐中球磨4～6小时，球磨后浆料于烘箱内烘干；
步骤5：将干燥料通过聚乙烯醇溶液造粒，在10～20MPa干压得到生坯；
步骤6：生坯在1100～1250℃烧结4～6小时，得到所述的微波介质材料。
以上4个实施例的具体工艺参数及微波介电性能如下表所示：
由上表可见，本发明提供的微波介质材料TmVO4，其在1100～1250℃烧结温度下拥有优良的微波介电性能：介电常数为11～12、Q×f值为40000～60000GHz、谐振频率温度系数为-35～-50ppm/℃。实施例3制备得微波介质材料TmVO4的XRD图、SEM图分别如图1、图2所示。
以上所述，仅为本发明的具体实施方式，本说明书中所公开的任一特征，除非特别叙述，均可被其他等效或具有类似目的的替代特征加以替换；所公开的所有特征、或所有方法或过程中的步骤，除了互相排斥的特征和/或步骤以外，均可以任何方式组合。

Claims (1)

1.一种微波介质材料，其特征在于，所述微波介质材料的化学式为TmVO4；所述微波介质材料的晶相为TmVO4，属于四方晶体结构；所述微波介质材料的品质因数Q×f值为40000～60000GHz，介电常数为11～12，谐振频率温度系数为-35～-50ppm/℃；所述微波介质材料的制备方法，包括以下步骤：
步骤1：以V2O5、Tm2O3为原料按照化学式TmVO4的摩尔比进行配料；
步骤2：将混合料、去离子水和锆球在球磨罐中球磨6～8小时，球磨后浆料于烘箱内烘干；
步骤3：将干燥粉料过筛后，放在坩埚中于800～900℃预烧3～4小时，得到预烧粉料；
步骤4：将预烧料、去离子水和锆球在球磨罐中球磨4～6小时，球磨后浆料于烘箱内烘干；
步骤5：将干燥料通过聚乙烯醇溶液造粒，在10～20MPa干压得到生坯；
步骤6：生坯在1100～1250℃烧结4～6小时，得到所述的微波介质材料。
CN202210384760.1A 2022-04-13 2022-04-13 一种微波介质材料TmVO4及其制备方法 Active CN114907124B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210384760.1A CN114907124B (zh) 2022-04-13 2022-04-13 一种微波介质材料TmVO4及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210384760.1A CN114907124B (zh) 2022-04-13 2022-04-13 一种微波介质材料TmVO4及其制备方法

Publications (2)

Publication Number Publication Date
CN114907124A CN114907124A (zh) 2022-08-16
CN114907124B true CN114907124B (zh) 2023-10-03

Family

ID=82764625

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210384760.1A Active CN114907124B (zh) 2022-04-13 2022-04-13 一种微波介质材料TmVO4及其制备方法

Country Status (1)

Country Link
CN (1) CN114907124B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115353387B (zh) * 2022-08-17 2023-10-03 电子科技大学 一种微波介质材料ErVO4及其制备方法
CN115403377B (zh) * 2022-08-31 2023-10-03 电子科技大学 一种微波介质材料HoVO4及其制备方法
CN115353388A (zh) * 2022-09-19 2022-11-18 电子科技大学 一种微波陶瓷材料PrVO4及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511134A1 (fr) * 1981-08-04 1983-02-11 Commissariat Energie Atomique Procede de refrigeration magnetique
CN101624206A (zh) * 2009-08-07 2010-01-13 南开大学 稀土金属氢氧化物或钒酸盐纳米材料的制备方法及应用

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511134A1 (fr) * 1981-08-04 1983-02-11 Commissariat Energie Atomique Procede de refrigeration magnetique
CN101624206A (zh) * 2009-08-07 2010-01-13 南开大学 稀土金属氢氧化物或钒酸盐纳米材料的制备方法及应用

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
《工程材料实用手册》编辑委员会.微波介质陶瓷材料.《工程材料实用手册第5卷粉末冶金材料 精密合金与功能材料》.中国标准出版社,2002,(第2版),第575页. *
SPECTROSCOPIC INVESTIGATION OF THE INTERACTION OF LOW-LYING CRYSTAL-FIELD EXCITATIONS AND OPTICAL PHONONS IN TmVO4：ELECTRONIC DAVYDOV AND MAGNETIC PHONON SPLITTING;J. Kraus;《solid state communications》;19891231;第71卷(第5期);第375-378页 *

Also Published As

Publication number Publication date
CN114907124A (zh) 2022-08-16

Similar Documents

Publication Publication Date Title
CN114907124B (zh) 一种微波介质材料TmVO4及其制备方法
JP2003531808A (ja) 低温焼結低損失高周波用誘電体セラミックス組成物およびその製造方法
CN114874010B (zh) 一种微波陶瓷材料DyVO4及其制备方法
CN111943671B (zh) 一种宽烧结温区低损耗微波介质陶瓷及其制备方法
CN104692795A (zh) 一种超低损耗钛酸镁锂微波介质陶瓷材料及其制备方法
CN111592348A (zh) 一种具有优异温度稳定性的低介电常数微波介质陶瓷及其制备方法
CN112876251A (zh) 基于冷烧结技术制备的高性能低介微波陶瓷及方法
CN108358633B (zh) 一种低温烧结Ca5Mn4-xMgxV6O24微波介质材料及其制备方法
CN111517789A (zh) 一种低介电微波介质陶瓷材料及其制备方法
CN103351155B (zh) 低温烧结二氧化硅基复合陶瓷及其制备方法
CN111004030B (zh) 一种MgTiO3基微波介质陶瓷及其制备方法
CN113735580B (zh) 一种复相微波介质陶瓷及其冷烧结制备方法
CN103408299B (zh) 一种钛酸锌钡体系陶瓷低温烧结材料及制备方法
CN108975913B (zh) 一种ZnO-TiO2-Nb2O5基LTCC材料及其制备方法
CN110229004A (zh) 一种低温烧结微波介质陶瓷材料及其制备方法
CN103467084B (zh) 一种高介电常数锂铌钛系低温烧结陶瓷及其制备方法
CN116854472A (zh) 一种微波介质材料及其制备方法
CN114736012B (zh) 具有超高q值的低介微波介质陶瓷及其ltcc材料
CN104710175A (zh) 一种低介电常数锆酸镁锂微波介质陶瓷材料及其制备方法
CN112851333B (zh) 一种高q值微波介质陶瓷材料及其制备方法
CN112939599A (zh) 铌钽锆镁微波介质陶瓷材料及其制备方法
CN111825445B (zh) 一种高介电常数微波介质陶瓷材料、制备及其应用
CN113072373A (zh) 一种适用于5g毫米波通讯应用的温度稳定型低介陶瓷材料及其制备方法
CN107021757B (zh) 一种微波介质陶瓷材料及其制备方法
CN112479704A (zh) 一种低温烧结高介微波介质陶瓷材料及其制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant