CN114902400A - 半导体装置及半导体装置的制造方法 - Google Patents
半导体装置及半导体装置的制造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229920005989 resin Polymers 0.000 claims abstract description 71
- 239000011347 resin Substances 0.000 claims abstract description 71
- 239000003507 refrigerant Substances 0.000 claims description 31
- 238000000465 moulding Methods 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000012986 modification Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000005452 bending Methods 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000001721 transfer moulding Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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Abstract
目的在于提供能够在半导体装置的组装等时抑制针式鳍片的由接触引起的变形的技术。半导体装置(100)具有基座板(1)、半导体元件(6)和树脂部件。基座板(1)在下表面具有多个针式鳍片(2)。半导体元件(6)搭载于基座板(1)的上侧。树脂部件至少将半导体元件(6)的侧面覆盖。另外,树脂部件具有将基座板(1)的侧面覆盖的肋部(9),肋部(9)的下端位于比多个针式鳍片(2)的下端更靠下方处。
Description
技术领域
本发明涉及半导体装置及其制造方法。
背景技术
就对电力进行控制的半导体装置而言,有时具备基座板,该基座板具有散热用的针式鳍片。该半导体装置存在以下问题,即,由于针式鳍片从封装件凸出至下方,因此在半导体装置的组装等时,作业者由于作业失误使针式鳍片与作业台接触而变形。
特别地,针式鳍片的材质是铝,因此容易由于接触而变形。如果针式鳍片变形,则有可能导致散热性的下降、冷媒流路的堵塞及冷媒的漏液等,因此,针式鳍片发生了变形的半导体装置变得形状不合格,无法作为产品而出厂。
例如在专利文献1中公开了如下构造,即,就冷却器与作为冷却对象的多个半导体模块被一体化后的半导体装置而言,多个半导体模块所具有的多个鳍片被收容于冷却器主体,通过冷却器主体对多个鳍片进行保护。
专利文献1:日本特开2018-63999号公报
发明内容
但是,在专利文献1所记载的技术中,就组装于冷却器之前的半导体模块而言,多个鳍片从保护模塑部凸出至下方,因此,无法解决作业者由于作业失误使多个鳍片与作业台接触而变形的问题。
因此,本发明的目的在于提供能够在半导体装置的组装等时抑制针式鳍片的由接触引起的变形的技术。
本发明涉及的半导体装置具有:基座板,其在下表面具有多个针式鳍片;半导体元件,其搭载于所述基座板的上侧;以及树脂部件,其至少将所述半导体元件的侧面覆盖,所述树脂部件具有将所述基座板的侧面覆盖的肋部,所述肋部的下端位于比多个所述针式鳍片的下端更靠下方处。
发明的效果
根据本发明,由于多个针式鳍片没有相对于肋部凸出至下方,因此,能够在半导体装置的组装等时抑制针式鳍片的由接触引起的变形。
本发明的目的、特征、方案以及优点通过以下的详细说明和附图变得更清楚。
附图说明
图1是实施方式1涉及的半导体装置的剖视图。
图2是表示实施方式1涉及的半导体装置的制造方法的流程图。
图3是表示焊接工序的剖视图。
图4是表示导线键合工序的剖视图。
图5是表示下夹具嵌合工序的剖视图。
图6是表示树脂模塑工序的剖视图。
图7是表示下夹具脱模工序的剖视图。
图8是表示引线切割及端子弯折工序的剖视图。
图9是表示实施方式1的变形例1中的树脂模塑工序的剖视图。
图10是表示实施方式1的变形例2中的树脂模塑工序的剖视图。
图11是表示实施方式1的变形例3中的引线切割及端子弯折工序的剖视图。
图12是实施方式2涉及的半导体装置的剖视图。
图13是实施方式3涉及的半导体装置的剖视图。
图14是针对实施方式3涉及的半导体装置示出组装冷媒套之前的状态的仰视图。
图15是表示实施方式3涉及的半导体装置所具有的冷媒套的俯视图。
图16是针对实施方式4涉及的半导体装置示出组装冷媒套之前的状态的剖视图。
图17是针对实施方式5涉及的半导体装置示出组装冷媒套之前的状态的剖视图。
图18是实施方式5涉及的半导体装置的剖视图。
具体实施方式
<实施方式1>
以下,使用附图对实施方式1进行说明。图1是实施方式1涉及的半导体装置100的剖视图。
如图1所示,半导体装置100为传递模塑型,具有基座板1、绝缘片3、散热器4、框架5、模塑树脂8及2个半导体元件6。
基座板1是在俯视观察时呈矩形的铝板,具有从基座板1的下表面凸出至下方的散热用的多个针式鳍片2。多个针式鳍片2是由铝制成的,与基座板1一体地形成。
散热器4隔着绝缘片3而配置于基座板1的上表面。2个半导体元件6经由焊料6a而搭载于散热器4的上表面。此外,半导体元件6的个数不限定于2个,也可以是1个或大于或等于3个。
框架5经由焊料6b而与半导体元件6的电极连接,或者经由导线7而与半导体元件6的电极连接。
模塑树脂8是至少将半导体元件6的侧面覆盖的树脂部件。具体地说,模塑树脂8例如由环氧树脂构成,将绝缘片3、散热器4、框架5的一部分及半导体元件6封装。模塑树脂8具有将基座板1的侧面覆盖的肋部9。肋部9由环氧树脂构成,与模塑树脂8一体地形成。另外,肋部9是以将多个针式鳍片2的侧面包围的方式,以遍布模塑树脂8的外周部整周而凸出至下方的方式形成的。肋部9的下端位于比多个针式鳍片2的下端更靠下方处。即,多个针式鳍片2没有相对于肋部9的下端凸出,因此,能够抑制作业者由于作业失误使多个针式鳍片2与作业台接触。
接下来,使用图2~图8对半导体装置100的制造方法进行说明。
图2是表示实施方式1涉及的半导体装置100的制造方法的流程图。
图3是表示焊接工序的剖视图。图4是表示导线键合工序的剖视图。
图5是表示下夹具嵌合工序的剖视图。图6是表示树脂模塑工序的剖视图。图7是表示下夹具脱模工序的剖视图。图8是表示引线切割及端子弯折工序的剖视图。
首先,如图2和图3所示,在焊接工序(步骤S1)中,在半导体元件6被配置于散热器4的上表面之后,通过焊料与散热器4及框架5接合。
接下来,如图2和图4所示,在导线键合工序(步骤S2)中,对框架5和半导体元件6通过导线键合而进行配线。
接下来,如图2和图5所示,在下夹具嵌合工序(步骤S3)中,在模塑模具内,在使下夹具50与多个针式鳍片2嵌合之后,在基座板1的上表面隔着绝缘片3而搭载散热器4,形成组装体。下夹具50的下表面是平面,在使下夹具50与多个针式鳍片2嵌合的状态下,组装体的底面是平坦的。
接下来,如图2和图6所示,在树脂模塑工序(步骤S4)中,对组装体进行模塑成形,通过环氧树脂而进行模塑封装。
接下来,如图2和图7所示,在下夹具脱模工序(步骤S5)中,从模塑成形后的组装体将下夹具50取下。
接下来,如图2和图8所示,在引线切割及端子弯折工序(步骤S6)中,进行框架5的切割和端子弯折。
这里,焊接工序相当于在散热器4的上表面搭载半导体元件6的工序(a)。下夹具嵌合工序相当于在模塑模具内,在使下夹具50与多个针式鳍片2嵌合之后,在基座板1的上表面隔着绝缘片3搭载散热器4而形成组装体的工序(b)。树脂模塑工序相当于对组装体进行模塑成形的工序(c)。并且,下夹具脱模工序相当于从模塑成形后的组装体将下夹具50取下的工序(d)。
如上所述,实施方式1涉及的半导体装置100具有:基座板1,其在下表面具有多个针式鳍片2;半导体元件6,其搭载于基座板1的上侧;以及树脂部件,其至少将半导体元件6的侧面覆盖,树脂部件具有将基座板1的侧面覆盖的肋部9,肋部9的下端位于比多个针式鳍片2的下端更靠下方处。这里,树脂部件是进一步对半导体元件6进行封装的模塑树脂8。
因此,多个针式鳍片2没有相对于肋部9凸出至下方,因此,能够在半导体装置100的组装等时抑制针式鳍片2的由接触引起的变形。
另外,半导体装置100的制造方法具有以下工序:工序(a),在散热器4的上表面搭载半导体元件6;工序(b),在模塑模具内,在使下夹具50与多个针式鳍片2嵌合之后,在基座板1的上表面隔着绝缘片3搭载散热器4而形成组装体;工序(c),对组装体进行模塑成形;以及工序(d),从模塑成形后的组装体将下夹具50取下。
模塑成形时的组装体的底面是平坦的,因此,成形时的压力在绝缘片3的面内是均匀地施加的,固化反应均等地推进,由此就半导体装置100而言,品质提高,能够抑制绝缘不良的产生。
这里,下夹具50也可以设置于模塑模具。即,下夹具50也可以是模塑模具的一部分。在这种情况下,能够减少组装体的部件数量,因此,组装体的组装性提高。
<实施方式1的变形例>
接下来,对实施方式1的变形例进行说明。图9是表示实施方式1的变形例1中的树脂模塑工序的剖视图。图10是表示实施方式1的变形例2中的树脂模塑工序的剖视图。图11是表示实施方式1的变形例3中的引线切割及端子弯折工序的剖视图。
如图9所示,也可以形成有从下夹具50的下表面凸出至下方的凸起51。凸起51遍布下夹具50的下表面的外周部的整周而形成。由此,在下夹具脱模工序中,作业者能够容易地从包裹着凸起51而模塑成形的组装体将下夹具50取下。
另外,如图10所示,在树脂模塑工序中,也可以在肋部9的下端部的与下夹具50相对的部位形成有凹部9a。凹部9a遍布肋部9的整周而形成。在使下夹具50脱模时,在错误地沿倾斜方向拉拽下夹具的情况下,对半导体装置100的与下夹具50嵌合的部位横向地施加力,因此,树脂制的肋部9的下端部的与下夹具50相对的部位有可能发生缺损。当在肋部9的下端部的与下夹具50相对的部位形成有凹部9a的情况下,在该部位不存在树脂,因此能够抑制在该部位处树脂缺损。
另外,如图11所示,也可以在肋部9的与下夹具50接触的部位形成有镜面9b。具体地说,半导体装置100的制造方法在树脂模塑工序与下夹具脱模工序之间也可以还具有对肋部9的与下夹具50接触的部位实施镜面精加工的工序。由此,能够提高下夹具50的相对于模塑成形后的组装体的脱模性。
<实施方式2>
接下来,对实施方式2涉及的半导体装置100A进行说明。图12是实施方式2涉及的半导体装置100A的剖视图。此外,在实施方式2中,对与在实施方式1中说明过的结构要素相同的结构要素标注相同的标号而省略说明。
如图12所示,在实施方式2中,至少将半导体元件6的侧面覆盖的树脂部件是树脂壳体10,半导体装置100A还具有被填充于树脂壳体10内、将半导体元件6封装的封装树脂12。封装树脂12由硅凝胶构成。另外,半导体装置100A具有陶瓷板13以取代绝缘片3。以下,将具有树脂壳体10的半导体装置100A也称为壳体型的半导体装置100A。
树脂壳体10例如由环氧树脂构成,具有将基座板1的侧面覆盖的肋部11。肋部11由环氧树脂构成,与树脂壳体10一体地形成。另外,肋部11是以将多个针式鳍片2的侧面包围的方式,以遍布树脂壳体10的外周部的整周而凸出至下方的方式形成的。肋部11的下端位于比多个针式鳍片2的下端更靠下方处。即,多个针式鳍片2没有相对于肋部11的下端凸出,因此,能够抑制作业者由于作业失误使多个针式鳍片2与作业台接触。
如上所述,就实施方式2涉及的半导体装置100A而言,树脂部件是树脂壳体10,半导体装置100A还具有被填充于树脂壳体10内、将半导体元件6封装的封装树脂12。
传递模塑型的半导体装置100适用于尺寸小的半导体装置,壳体型的半导体装置100A适用于尺寸大的半导体装置。因此,就大尺寸的半导体装置而言,也由于多个针式鳍片2没有相对于肋部9凸出至下方,因此,能够在半导体装置100A的组装等时抑制针式鳍片2的由接触引起的变形。
<实施方式3>
接下来,对实施方式3涉及的半导体装置100B进行说明。图13是实施方式3涉及的半导体装置100B的剖视图。图14是针对实施方式3涉及的半导体装置100B示出组装冷媒套20之前的状态的仰视图。图15是实施方式3涉及的半导体装置100B所具有的冷媒套20的俯视图。此外,在实施方式3中,对与在实施方式1、2中说明过的结构要素相同的结构要素标注相同的标号而省略说明。
如图13~图15所示,在实施方式3中,半导体装置100B相对于实施方式1涉及的半导体装置100还具有冷媒套20。即,半导体装置100B为传递模塑型,具有基座板1、绝缘片3、散热器4、框架5、模塑树脂8、冷媒套20及2个半导体元件6。
如图13和图15所示,冷媒套20在俯视观察时呈矩形,被固定于肋部9及多个针式鳍片2的下端,在冷媒套20与基座板1之间形成有冷媒即冷却水的流路23。冷媒套20具有在剖视观察时呈T字型的中板21和在剖视观察时呈凹状的主体部22。中板21形成于主体部22的凹陷部分,主体部22形成于冷媒套20的外周部,即,比中板21更靠外周侧。中板21的上表面位于比主体部22更靠上方处,因此与多个针式鳍片2的下端抵接,主体部22的上表面与肋部9的下端抵接。
另外,在主体部22的上表面的内周部遍布整周而形成有收容O型环24的槽部22a。在槽部22a收容有矩形框状的O型环24。在模塑树脂8的上表面配置有相对于冷媒套20而将模塑树脂8及基座板1向下方按压的按压板30。
如上所述,实施方式3涉及的半导体装置100B还具有:冷媒套20,其被固定于肋部9及多个针式鳍片2的下端,在冷媒套20与基座板1之间形成冷却水的流路23,冷媒套20具有与针式鳍片2的下端抵接的中板21和形成于比中板21更靠外周侧且与肋部9的下端抵接的主体部22,中板21的上表面位于比主体部22更靠上方处。
通过形成有与针式鳍片2相比凸出至下方的肋部9,从而能够使从模塑树脂8的侧面伸出至外部的框架5与冷媒套20之间的距离变长,因此能够确保针对框架5与冷媒套20之间的绝缘的所需的沿面距离及空间距离。
另外,通过使中板21与多个针式鳍片2的下端抵接,基座板1与中板21接近,从而流过基座板1与中板21之间的冷却水的流速变快,因此半导体装置100B的散热性提高。
<实施方式4>
接下来,对实施方式4涉及的半导体装置进行说明。图16是针对实施方式4涉及的半导体装置示出组装冷媒套20之前的状态的剖视图。此外,在实施方式4中,对与在实施方式1~3中说明过的结构要素相同的结构要素标注相同的标号而省略说明。
如图16所示,在实施方式4中,在肋部9的内周面及基座板1与作为树脂部件的模塑树脂8之间的边界处形成有树脂涂覆部25。
模塑树脂8等树脂是易吸湿的材质,因此,就实施方式4涉及的半导体装置而言,通过在与冷却水接触的部位即肋部9的内周面及基座板1与模塑树脂8之间的边界处形成树脂涂覆部25,从而能够抑制该部位处的吸湿。
如上所述,就实施方式4涉及的半导体装置而言,在肋部9的内周面及基座板1与模塑树脂8之间的边界处形成有树脂涂覆部25,因此,抑制了该部位处的吸湿,并且切断冷却水向模塑树脂8的内部的侵入,由此能够抑制半导体装置变得绝缘不良。
<实施方式5>
接下来,对实施方式5涉及的半导体装置100C进行说明。图17是针对实施方式5涉及的半导体装置100C示出组装冷媒套20之前的状态的剖视图。图18是实施方式5涉及的半导体装置100C的剖视图。此外,在实施方式5中,对与在实施方式1~4中说明过的结构要素相同的结构要素标注相同的标号而省略说明。
在实施方式3中,在冷媒套20形成有收容O型环24的槽部22a,但如图17和图18所示,在实施方式5中,在肋部9的下端部形成有收容O型环24的槽部9c。槽部9c遍布肋部9的下端部的整周而形成,在槽部9c收容有矩形框状的O型环24。
如上所述,就实施方式5涉及的半导体装置100C而言,在肋部9的下端部形成有收容O型环24的槽部9c。因此,能够在树脂模塑工序中形成槽部9c,因此与在冷媒套20形成槽部22a的情况相比,能够削减与槽加工相关的工时。同样地,由于不需要在冷媒套20形成槽部22a,因此能够削减与制作冷媒套20时的金属加工相关的工时。
<其它变形例>
在实施方式3~5中,说明了传递模塑型的半导体装置具有冷媒套20的情况,但不限定于此,也可以是壳体型的半导体装置具有冷媒套20。在这种情况下,也得到与实施方式3~5的情况相同的效果。
对本发明进行了详细说明,但上述说明在所有方面均为例示,本发明不限定于此。可以理解为在不脱离该发明的范围的情况下能够想到未例示出的无数的变形例。
此外,能够对各实施方式自由地进行组合,或对各实施方式适当地进行变形、省略。
标号的说明
1基座板,2针式鳍片,3绝缘片,4散热器,6半导体元件,8模塑树脂,9肋部,9a凹部,9c槽部,10树脂壳体,12封装树脂,20冷媒套,21中板,22主体部,24O型环,25树脂涂覆部,50下夹具,51凸起,100、100A、100B、100C半导体装置。
Claims (11)
1.一种半导体装置,其具有:
基座板,其在下表面具有多个针式鳍片;
半导体元件,其搭载于所述基座板的上侧;以及
树脂部件,其至少将所述半导体元件的侧面覆盖,
所述树脂部件具有将所述基座板的侧面覆盖的肋部,
所述肋部的下端位于比多个所述针式鳍片的下端更靠下方处。
2.根据权利要求1所述的半导体装置,其中,
所述树脂部件是进一步将所述半导体元件封装的模塑树脂。
3.根据权利要求1所述的半导体装置,其中,
所述树脂部件是树脂壳体,
所述半导体装置还具有被填充于所述树脂壳体内且将所述半导体元件封装的封装树脂。
4.根据权利要求1所述的半导体装置,其中,
还具有冷媒套,该冷媒套被固定于所述肋部及多个所述针式鳍片的下端,在该冷媒套与所述基座板之间形成冷媒的流路,
所述冷媒套具有与所述针式鳍片的下端抵接的中板和形成于比所述中板更靠外周侧且与所述肋部的下端抵接的主体部,
所述中板的上表面位于比所述主体部更靠上方处。
5.根据权利要求4所述的半导体装置,其中,
在所述肋部的内周面及所述基座板与所述树脂部件之间的边界处形成有树脂涂覆部。
6.根据权利要求4或5所述的半导体装置,其中,
在所述肋部的下端部形成有收容O型环的槽部。
7.一种半导体装置的制造方法,其对权利要求2所述的半导体装置进行制造,所述半导体装置的制造方法具有以下工序:
工序(a),在散热器的上表面搭载所述半导体元件;
工序(b),在模塑模具内,在使下夹具与多个所述针式鳍片嵌合之后,在所述基座板的上表面隔着绝缘片搭载所述散热器而形成组装体;
工序(c),对所述组装体进行模塑成形;以及
工序(d),从模塑成形后的所述组装体将所述下夹具取下。
8.根据权利要求7所述的半导体装置的制造方法,其中,
所述下夹具设置于所述模塑模具。
9.根据权利要求7或8所述的半导体装置的制造方法,其中,
形成有从所述下夹具的下表面凸出至下方的凸起。
10.根据权利要求7至9中任一项所述的半导体装置的制造方法,其中,
在所述工序(c)中,在所述肋部的下端部的与所述下夹具相对的部位处形成有凹部。
11.根据权利要求7至10中任一项所述的半导体装置的制造方法,其中,
还具有:工序(e),在所述工序(c)与所述工序(d)之间,对所述肋部的与所述下夹具接触的部位实施镜面精加工。
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JP2018063999A (ja) * | 2016-10-11 | 2018-04-19 | トヨタ自動車株式会社 | 半導体装置 |
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JPH09260550A (ja) * | 1996-03-22 | 1997-10-03 | Mitsubishi Electric Corp | 半導体装置 |
JP2012164763A (ja) * | 2011-02-04 | 2012-08-30 | Toyota Motor Corp | ヒートシンク付き半導体パッケージの製造方法及び当該ヒートシンク |
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WO2017175612A1 (ja) * | 2016-04-04 | 2017-10-12 | 三菱電機株式会社 | パワーモジュール、パワー半導体装置及びパワーモジュール製造方法 |
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JPH098209A (ja) * | 1995-06-15 | 1997-01-10 | Hitachi Ltd | 半導体装置およびモールド金型 |
JPH10112519A (ja) * | 1996-10-08 | 1998-04-28 | Nippon Motorola Ltd | 熱放散手段を有する集積回路装置及びその製造方法 |
JP2013012663A (ja) * | 2011-06-30 | 2013-01-17 | Ngk Spark Plug Co Ltd | 放熱部品及び半導体モジュール装置 |
CN107078100A (zh) * | 2014-10-29 | 2017-08-18 | 日立汽车系统株式会社 | 电子设备及电子设备的制造方法 |
CN107924885A (zh) * | 2015-08-26 | 2018-04-17 | 日立汽车系统株式会社 | 构造体 |
JP2018063999A (ja) * | 2016-10-11 | 2018-04-19 | トヨタ自動車株式会社 | 半導体装置 |
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DE112020006455T5 (de) | 2022-10-27 |
WO2021140586A1 (ja) | 2021-07-15 |
US20220392822A1 (en) | 2022-12-08 |
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