CN114899280A - 一种镉掺杂的铜锌锡硫硒薄膜制备方法及其在太阳能电池中的应用 - Google Patents
一种镉掺杂的铜锌锡硫硒薄膜制备方法及其在太阳能电池中的应用 Download PDFInfo
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- SEUJAMVVGAETFN-UHFFFAOYSA-N [Cu].[Zn].S=[Sn]=[Se] Chemical compound [Cu].[Zn].S=[Sn]=[Se] SEUJAMVVGAETFN-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000002243 precursor Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000003960 organic solvent Substances 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 59
- 239000011701 zinc Substances 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 16
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 16
- 239000011135 tin Substances 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims description 10
- 150000001879 copper Chemical class 0.000 claims description 10
- 150000003751 zinc Chemical class 0.000 claims description 10
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 5
- 150000003346 selenoethers Chemical class 0.000 claims description 5
- 239000005361 soda-lime glass Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000005749 Copper compound Substances 0.000 claims description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 2
- 150000001880 copper compounds Chemical class 0.000 claims description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 150000003606 tin compounds Chemical class 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 abstract description 2
- FWPIDFUJEMBDLS-UHFFFAOYSA-L tin(II) chloride dihydrate Chemical group O.O.Cl[Sn]Cl FWPIDFUJEMBDLS-UHFFFAOYSA-L 0.000 description 12
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical group [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 12
- 230000007547 defect Effects 0.000 description 7
- NWFNSTOSIVLCJA-UHFFFAOYSA-L copper;diacetate;hydrate Chemical group O.[Cu+2].CC([O-])=O.CC([O-])=O NWFNSTOSIVLCJA-UHFFFAOYSA-L 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 235000005074 zinc chloride Nutrition 0.000 description 6
- 239000011592 zinc chloride Substances 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910017518 Cu Zn Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017987 Cu—Zn—Sn—S—Se Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
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Abstract
本发明公开一种镉掺杂的铜锌锡硫硒薄膜制备方法及其在太阳能电池中的应用。本发明基于有机溶剂的溶液法制备铜锌锡硫前驱体，在前驱体薄膜上通过真空工艺制备一层金属或金属化合物，再在薄膜上化学水浴法沉积一层CdS，再经过高温退火冷却就可以制备得到镉掺杂的铜锌锡硫硒薄膜，该方法制备的镉掺杂的铜锌锡硫硒薄膜晶粒尺寸大，无二次相，基于该镉掺杂的铜锌锡硫硒薄膜制备的太阳能电池短路电流密度提升明显，光电转换效率高。
Description
技术领域
本发明属于薄膜太阳能电池材料领域，具体涉及一种镉掺杂的铜锌锡硫硒薄膜制备方法及其在太阳能电池中的应用。
背景技术
自21世纪以来，不可再生能源短缺和地球污染一直是人们关注的主要问题。为了满足不断增长的高能源需求水平，必须使用可再生能源。与传统的不可再生能源相比，使用可再生能源还具有无污染的额外优势。太阳能是一种经济高效的资源，因为它取之不尽，而且相对无污染。光伏(PV)系统由于能够将太阳光直接转化为电能而受到欢迎。由于没有任何机械运动，光伏系统寿命长，维护成本非常低。如今，硅基光伏技术主导着太阳能市场。最好的晶体硅太阳能电池的效率超过了27％，而最好的薄膜太阳能电池的效率也超过了20％。CdTe和Cu(In,Ga)Se2(CIGS)等薄膜技术使用直接带隙化合物半导体。另一种薄膜技术是Cu2SnZnS4(CZTS)，它比CIGS更环保，而且可用性更高。CZTSSe薄膜具有(1.0-1.5)eV的可调带隙和高吸收系数(>104cm-1)，因此被认为是一种优良的光伏材料。
从1988年CZTS材料被首次应用到太阳能电池，到2014年的前世界效率记录12.6％，再到2021年新世界效率纪录13.0％，CZTSSe太阳能电池持续进步发展，虽然研究者们在CZTSSe太阳能电池领域已经取得了一定的成绩，但是距离其他新型太阳能电池的效率还有一定差距，CZTSSe材料受制于缺陷、界面、二次相等因素，研究者们正在积极寻求新的突破。
发明内容
本发明的目的是提供一种镉掺杂的铜锌锡硫硒薄膜制备方法及其在太阳能电池中的应用，以解决现有技术中的不足。
为实现上述目的，本发明提供的一种镉掺杂的铜锌锡硫硒薄膜制备方法，包括以下步骤：
(1)配置铜盐、锌盐、锡盐、硫脲与有机溶剂混合的溶胶凝胶溶液；
(2)将溶胶凝胶溶液通过非真空工艺于镀Mo的钠钙玻璃衬底之上制备出前驱体薄膜；
(3)通过真空工艺于步骤(2)制备的薄膜上沉积一层5-50nm金属或金属硫化物或金属硒化物；
(4)通过化学水浴法在步骤(3)制备的薄膜上沉积一层10-100nm的CdS，得到预制层薄膜；
(5)将步骤(4)的预制层薄膜置于盛有硒粉或者硫粉的石墨盒，于400-600℃高温下进行退火处理5-30min，自然冷却后得到镉掺杂的铜锌锡硫硒薄膜。
优选地，步骤(1)中铜盐为二价铜化合物，包括CuCl2或Cu(CH3COO)2；锌盐包括ZnCl2或Zn(CH3COO)2；锡盐为二价锡化合物，包括SnCl2或Sn(CH3COO)2。
优选地，步骤(1)中有机溶剂包括乙二醇单甲醚、N,N-二甲基甲酰胺或二甲基亚砜。
优选地，步骤(1)中金属元素比例为0.6≤Cu/(Zn+Sn)≤1.0，1.0≤Zn/Sn≤1.3，4.0≤S/Zn≤8.0。
优选地，步骤(2)中非真空工艺包括旋转涂布法、丝网印刷法或提拉法。
优选地，步骤(2)中制备的前驱体薄膜厚度在0.5-3μm之间。
优选地，步骤(3)中真空工艺为磁控溅射法或蒸发法。
优选地，步骤(3)中金属包括Cu或Zn或Sn中的一种或多种，金属硫化物包括CuS或Cu2S或ZnS或SnS或SnS2中的一种或多种，金属硒化物包括CuSe或Cu2Se或ZnSe或SnSe或SnSe2中的一种或多种。
优选地，步骤(5)中硒粉或者硫粉为0.5g。
上述的镉掺杂的铜锌锡硫硒薄膜应用于太阳能电池中。
本发明的技术构思是：由于Cu原子和Zn原子半径及其相近，导致吸收层内部CuZn反位缺陷的大量存在，如何减少CuZn反位缺陷是一个重要研究方向，Cd掺杂取代Zn是一个减少CuZn反位缺陷的有效途径。本发明的特点是使用溶胶凝胶溶液通过非真空工艺制备前驱体薄膜，在前驱体薄膜的基础上通过真空工艺沉积一层金属或金属化合物，再通过化学水浴法沉积一层CdS。金属层(或金属硫化物或金属硒化物)的存在是作为CdS的载体，改变CdS的沉积方式，使其更好地掺杂，并且可以通过调节其厚度精准控制铜锌锡硫硒薄膜中铜锌锡元素比例，沉积CdS的目的为提供Cd掺杂的Cd源，通过控制沉积CdS的时间可以精准控制铜锌锡硫硒薄膜中镉元素的含量。
与现有技术相比较，本方法具备以下有益效果：
(1)工艺成本低，简单易操作；(2)增大铜锌锡硫硒吸收层晶粒尺寸；(3)各元素可以精准调控；(4)镉掺杂的铜锌锡硫硒薄膜有效改善缺陷，制备的太阳能电池器件效率高。
附图说明
图1是实施例1中预制层薄膜结构示意图；
图2是实施例1中预制层薄膜的表面SEM图；
图3是实施例1中镉掺杂的铜锌锡硫硒薄膜SEM图；
图4是实施例1中镉掺杂的铜锌锡硫硒薄膜XRD图；
图5是实施例1中镉掺杂的铜锌锡硫硒薄膜XPS图谱的Cd谱；
图6是实施例1中基于镉掺杂的铜锌锡硫硒薄膜制备的太阳能电池的JV图；
图7是对比例1中前驱体薄膜的表面SEM图；
图8是对比例1中铜锌锡硫硒薄膜SEM图；
图9是对比例1中铜锌锡硫硒薄膜制备的太阳能电池的JV图。
具体实施方式
下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释本发明，而非对本发明的限定。
实施例1：
首先配置铜盐、锌盐、锡盐、硫脲与有机溶剂混合的溶胶凝胶溶液，铜盐选取乙酸铜一水合物，锌盐选取氯化锌，锡盐选取氯化亚锡二水合物，有机溶剂选取乙二醇单甲醚，称量乙酸铜一水合物1.3340g，氯化锌0.6815g，氯化亚锡二水合物1.0255g，硫脲2.4358g，混合加入10mL乙二醇单甲醚，得到澄清的溶胶凝胶溶液，其中元素比例为Cu/(Zn+Sn)＝0.7，Zn/Sn＝1.1，S/Zn＝6.5。
通过旋转涂布法将溶胶凝胶溶液涂覆于镀Mo的钠钙玻璃衬底上，得到前驱体薄膜，前躯体薄膜的厚度为1μm。
通过磁控溅射法在前驱体薄膜上溅射一层10nm的Cu层。
在制备有Cu层的薄膜上通过化学水浴法制备一层20nm的CdS层，得到预制层薄膜，预制层薄膜结构如图1所示，所制备的预制层薄膜SEM图如图2所示。如图2所示，颗粒状物质为CdS，Cu层改变了CdS沉积的方式，增大了粗糙度，更有利于后续高温退火过程。
预制层薄膜置于盛有0.5g硒粉的石墨盒，于560℃高温下进行退火处理15min，自然冷却后得到镉掺杂的铜锌锡硫硒薄膜。所制备的镉掺杂的铜锌锡硫硒薄膜SEM图如图3所示，所制备的镉掺杂的铜锌锡硫硒薄膜XRD图如图4所示，所制备的镉掺杂的铜锌锡硫硒薄膜XPS图谱的Cd谱如图5所示。如图3所示，铜锌锡硫硒薄膜晶粒表面致密，孔隙少，小晶较少，大晶尺寸大于1μm。如图4所示，该方法制备的镉掺杂的铜锌锡硫硒薄膜无二次相。如图5所示，本发明提供镉掺杂的铜锌锡硫硒薄膜制备方法可以有效使Cd掺入铜锌锡硫硒薄膜，从而减少CuZn反位缺陷。
将所制得的镉掺杂的铜锌锡硫硒薄膜制成太阳能电池，太阳能电池的JV图如图6所示。与图9相比，可以发现，镉掺杂的太阳能电池短路电流密度提升明显，光电转换效率高。
对比例1：
首先配置铜盐、锌盐、锡盐、硫脲与有机溶剂混合的溶胶凝胶溶液，铜盐选取乙酸铜一水合物，锌盐选取氯化锌，锡盐选取氯化亚锡二水合物，有机溶剂选取乙二醇单甲醚，称量乙酸铜一水合物1.3340g，氯化锌0.6815g，氯化亚锡二水合物1.0255g，硫脲2.4358g，混合加入10mL乙二醇单甲醚，得到澄清的溶胶凝胶溶液，其中元素比例为Cu/(Zn+Sn)＝0.7，Zn/Sn＝1.1，S/Zn＝6.5。
通过旋转涂布法将溶胶凝胶溶液涂覆于镀Mo的钠钙玻璃衬底上，得到前驱体薄膜，前躯体薄膜的厚度为1μm，前驱体薄膜SEM图如图7所示。从图可知，前驱体薄膜较为平整但存在一定缝隙。
前驱体薄膜置于盛有0.5g硒粉的石墨盒，于560℃高温下进行退火处理15min，自然冷却后得到铜锌锡硫硒薄膜。所制备的铜锌锡硫硒薄膜SEM图如图8所示。从图可以看出，铜锌锡硫硒薄膜晶粒小晶较多较碎，存在一定孔隙，大晶尺寸在1μm左右。
将所制得的铜锌锡硫硒薄膜制成太阳能电池，太阳能电池的JV图如图9所示。
实施例2：
首先配置铜盐、锌盐、锡盐、硫脲与有机溶剂混合的溶胶凝胶溶液，铜盐选取乙酸铜一水合物，锌盐选取氯化锌，锡盐选取氯化亚锡二水合物，有机溶剂选取N,N-二甲基甲酰胺，称量乙酸铜一水合物1.4129g，氯化锌0.6815g，氯化亚锡二水合物0.8678g，硫脲2.4358g，混合加入10mLN,N-二甲基甲酰胺，得到澄清的溶胶凝胶溶液，其中元素比例为Cu/(Zn+Sn)＝0.8，Zn/Sn＝1.3，S/Zn＝6.5。
通过提拉法将溶胶凝胶溶液涂覆于镀Mo的钠钙玻璃衬底上，得到前驱体薄膜，前躯体薄膜的厚度为2μm。
通过蒸发法在前驱体薄膜表面上溅射一层5nm的ZnSe层。
在制备有ZnSe层的薄膜上通过化学水浴法制备一层30nm的CdS层，得到预制层薄膜。
预制层薄膜置于盛有0.5g硫粉的石墨盒中，于570℃高温下进行退火处理5min，自然冷却后得到镉掺杂的铜锌锡硫硒薄膜。
Claims (10)
1.一种镉掺杂的铜锌锡硫硒薄膜制备方法，其特征在于，包括以下步骤：
(1)配置铜盐、锌盐、锡盐、硫脲与有机溶剂混合的溶胶凝胶溶液；
(2)将溶胶凝胶溶液通过非真空工艺于镀Mo的钠钙玻璃衬底之上制备出前驱体薄膜；
(3)通过真空工艺于步骤(2)制备的薄膜上沉积一层5-50nm金属或金属硫化物或金属硒化物；
(4)通过化学水浴法在步骤(3)制备的薄膜上沉积一层10-100nm的CdS，得到预制层薄膜；
(5)将步骤(4)的预制层薄膜置于盛有硒粉或者硫粉的石墨盒，于400-600℃高温下进行退火处理5-30min，自然冷却后得到镉掺杂的铜锌锡硫硒薄膜。
2.根据权利要求1所述的方法，其特征在于，步骤(1)中铜盐为二价铜化合物，包括CuCl2或Cu(CH3COO)2；锌盐包括ZnCl2或Zn(CH3COO)2；锡盐为二价锡化合物，包括SnCl2或Sn(CH3COO)2。
3.根据权利要求1所述的方法，其特征在于，步骤(1)中有机溶剂包括乙二醇单甲醚、N,N-二甲基甲酰胺或二甲基亚砜。
4.根据权利要求1所述的方法，其特征在于，步骤(1)中金属元素比例为0.6≤Cu/(Zn+Sn)≤1.0，1.0≤Zn/Sn≤1.3，4.0≤S/Zn≤8.0。
5.根据权利要求1所述的方法，其特征在于，步骤(2)中非真空工艺包括旋转涂布法、丝网印刷法或提拉法。
6.根据权利要求1所述的方法，其特征在于，步骤(2)中制备的前驱体薄膜厚度在0.5-3μm之间。
7.根据权利要求1所述的方法，其特征在于，步骤(3)中真空工艺为磁控溅射法或蒸发法。
8.根据权利要求1所述的方法，其特征在于，步骤(3)中金属包括Cu或Zn或Sn中的一种或多种，金属硫化物包括CuS或Cu2S或ZnS或SnS或SnS2中的一种或多种，金属硒化物包括CuSe或Cu2Se或ZnSe或SnSe或SnSe2中的一种或多种。
9.根据权利要求1所述的方法，其特征在于，步骤(5)中硒粉或者硫粉为0.5g。
10.权利要求1所述的镉掺杂的铜锌锡硫硒薄膜在太阳能电池中的应用。
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