CN114899247A - 一种适用黑组件的晶硅太阳能电池正膜膜层结构及其制备方法 - Google Patents
一种适用黑组件的晶硅太阳能电池正膜膜层结构及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种适用黑组件的晶硅太阳能电池正膜膜层结构及其制备方法,该正膜膜层结构包括由下至上依次设置的氧化层、高折射率氮化硅膜层、低折射率氮化硅膜层、超低折射率氮化硅膜层和氧化硅膜层,高折射率氮化硅膜层、低折射率氮化硅膜层、超低折射率氮化硅膜层、氧化硅膜层的折射率依次递减。制备方法包括采用PECVD沉积方法在底层氧化层上先后制备高折射率氮化硅膜层、低折射率氮化硅膜层、超低折射率氮化硅膜层和氧化硅膜层。本发明的晶硅太阳能电池正膜膜层结构可改善片内和片间膜层均匀性,最大程度降低正面反射率,使组件外观效果呈现黑色,有效解决黑色电池片边缘发蓝和片间颜色差异问题。
Description
技术领域
本发明属于光伏电池技术领域,具体涉及一种适用黑组件的晶硅太阳能电池正膜膜层结构及其制备方法。
背景技术
目前市场上主要的晶硅太阳能电池组件主要为蓝色,片间和片内颜色存在一定差异,不能有效满足户用客户屋顶安装的特殊需求。高端全黑组件是属于定制化产品,它主要利用到黑色电池技术和组件技术(焊带黑色胶带和黑色背板),所制备的黑组件颜色一致和美观大气,受到屋顶户用客户的青睐。但是,常规的黑色电池片存在边缘发蓝、片间色差(发蓝或发灰)问题,影响黑色组件一致性和美观性,造成外观客诉问题,严重影响高端黑组件户用客户的视觉体验。
黑色电池和常规电池的区别主要在正面膜层结构上。传统晶硅太阳能电池正膜一般采用管式PECVD技术沉积,通常采用不同折射率双层氮化硅或者多层氮化硅膜层结构,可以有效改善表面减反射效果和提升钝化性能。而黑色电池除了沉积氮化硅层外,还需要用到笑气,沉积低折射率氮氧化硅膜或氧化硅膜,黑色电池正面复合膜层还需要通过组件层压后才能呈现黑色外观。
现有黑色电池沉积工艺有采用依次沉积高折射率氮氧化硅膜、氮化硅膜、低折射率氮氧化硅膜、氧化硅膜的方式来沉积氮氧硅膜和氧化硅膜等膜层,由于使用的笑气活性较高,导致沉积氮氧硅膜和氧化硅膜时,炉口和炉尾的片间差异性较大,单片也有较高比例的边缘发蓝,导致层压后片间颜色差异(发蓝或发灰),影响黑组件整体颜色效果。
发明内容
本发明要解决的技术问题是克服现有技术的不足,提供一种可改善片内和片间膜层均匀性、最大程度降低正面反射率、使组件外观效果呈现黑色的适用黑组件的晶硅太阳能电池正膜膜层结构及其制备方法。
为解决上述技术问题,本发明采用以下技术方案。
一种适用黑组件的晶硅太阳能电池正膜膜层结构,包括由下至上依次设置的氧化层、高折射率氮化硅膜层、低折射率氮化硅膜层、超低折射率氮化硅膜层和氧化硅膜层,所述高折射率氮化硅膜层、低折射率氮化硅膜层、超低折射率氮化硅膜层、氧化硅膜层的折射率依次递减。
上述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,优选的,所述高折射率氮化硅膜层的厚度为10nm~15nm,所述高折射率氮化硅膜层的折射率为2.3~2.35;所述低折射率氮化硅膜层的厚度为15nm~20nm,所述低折射率氮化硅膜层的折射率为2.05~2.1;所述超低折射率氮化硅膜层的厚度为15nm~20nm,所述超低折射率氮化硅膜层的折射率为1.9~1.95。
上述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,优选的,所述氧化硅膜层的厚度为25nm~35nm,所述氧化硅膜层的折射率为1.5~1.7。
上述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,优选的,所述高折射率氮化硅膜层、低折射率氮化硅膜层、超低折射率氮化硅膜层、氧化硅膜层的总厚度为65nm~90nm,所述高折射率氮化硅膜层、低折射率氮化硅膜层、超低折射率氮化硅膜层、氧化硅膜层的综合折射率为2.05±0.15。
上述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,优选的,所述晶硅太阳能电池为PERC电池或者N型IBC电池时,所述氧化层为热氧化生长的氧化硅层,所述氧化层的厚度为1nm~5nm;所述晶硅太阳能电池为TOPCon电池或者P型IBC电池时,所述氧化层为原子层沉积的氧化铝层,所述氧化层的厚度为1nm~2nm。
上述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,优选的,还包括基底,所述氧化层设于基底上,所述基底为硅基底。
作为一个总的技术构思,本发明还提供一种上述的适用黑组件的晶硅太阳能电池正膜膜层结构的制备方法,包括以下步骤:
S1、在基底上制备氧化层;
S2、高折射率氮化硅膜层的沉积:将带氧化层的基底进行PECVD沉积,沉积条件为:反应温度升至450℃~550℃,通入体积流量比为1∶3~5的SiH4和NH3,压力设定为200Pa~250Pa,射频电源频率为40KHz~120KHz,射频功率为6000W~13000W,反应时间为110s~160s,占空比为1∶15~20,得到高折射率氮化硅膜层;
S3、低折射率氮化硅膜层的沉积:将反应温度控制在450℃~550℃,通入体积流量比为1∶9的SiH4和NH3,压力设定为210Pa~260Pa,射频电源频率为40KHz~120KHz,射频功率为10000W~13000W,反应时间为160s~190s,占空比为1∶9~15,得到低折射率氮化硅膜层;
S4、超低折射率氮化硅膜层的沉积:将反应温度控制在450℃~550℃,通入体积流量比为1∶10~12的SiH4和NH3,压力设定为220Pa~270Pa,射频电源频率为40KHz~120KHz,射频功率为10000W~13000W,反应时间为160s~190s,占空比为1∶9~15,得到超低折射率氮化硅膜层;
S5、氧化硅膜层的沉积:将反应温度控制在450℃~550℃,通入体积流量比为1∶12的SiH4和N2O,压力设定为140Pa~190Pa,射频电源频率为40KHz~120KHz,射频功率为5000W~7000W,反应时间为280s~350s,占空比为1∶15~20,得到氧化硅膜层。
上述的一种适用黑组件的晶硅太阳能电池正膜膜层结构的制备方法,优选的,步骤S1中,所述氧化层为氧化硅层时,通过热氧化生长,工艺条件为:温度控制在680℃~720℃,氧气流量为600sccm~12000sccm,反应时间为900s~1800s。
上述的一种适用黑组件的晶硅太阳能电池正膜膜层结构的制备方法,优选的,步骤S1中,所述氧化层为氧化铝层时,通过原子层沉积制备,制备方法包括TMA(三甲基铝)吸附反应、第一氮气吹扫、水分子吸附反应、第二氮气吹扫;工艺条件为:温度控制在180℃~200℃,单循环通气时间比TMA∶第一氮气∶H2O∶第二氮气=4∶8∶3∶9,工艺进行14个~16个循环,反应腔体压力为4mbar~5mbar。
本发明中,硅片表面反射率计算基本公式如下:
PECVD:等离子增强化学气相沉积。
PID:电势诱导衰减测试。
与现有技术相比,本发明的优点在于∶
(1)本发明的适用黑组件的晶硅太阳能电池正膜膜层结构包括底层的氧化层、高折(高折射率的简称)氮化硅膜、低折氮化硅膜、超低折氮化硅膜和氧化硅膜,每层介质膜的膜厚和折射率进行匹配性设计,折射率由下至上逐步减小,结合光伏玻璃低折射率特性,可以很好地增加太阳光中长波和短波的吸收,最大程度降低正面反射率,达到理想的陷光效果,使组件外观效果呈现黑色。本发明通过多层氮化硅膜改善片间与片内的均匀性,减小了氧化硅膜沉积过程中笑气活性过大和反应过快的影响,改善了片内和片间膜层均匀性。
(2)本发明的制备方法中,高折氮化硅膜使用加长占空比设计可提高膜层均匀性,氧化硅膜通过加长占空比以及降低沉积功率来降低氧化硅沉积速率,提高氧化硅膜层片内及片间均匀性,并减小炉口和炉尾差异。本发明可以有效解决现有黑组件电池存在的片内均匀性差、边缘发蓝、片间均匀性偏差(发蓝、发灰和发暗)问题。此外,PECVD沉积的底层氮化硅膜折射率较大,具有优异的钝化作用,同时提升了晶硅太阳能电池的抗PID性能。
通过模拟光学匹配、实验验证和量产应用,本发明的膜层工艺能够较好地解决黑色电池片边缘发蓝问题和改善片间颜色差异问题,并且PERC电池黑组件在85℃、85%湿度、电压1500V、96h条件下,PID可靠性测试结果是合格的,且该正面膜层结构抗PID性能是优异的。本发明的正膜膜层结构和沉积工艺不仅可以适用于PERC电池,还可以应用到TOPCon电池正面镀膜,因此有较大的应用价值。
(3)本发明的制备方法中,高折氮化硅膜层、低折氮化硅膜层、超低折氮化硅膜层、氧化硅膜层的占空比需要控制在合适的范围内,占空比时间拉得太长,对膜色改善有限,还不利于PECVD产能释放。
附图说明
图1为本发明实施例1中适用黑组件的晶硅太阳能电池正膜膜层结构及光折射示意图。
图2为本发明实施例1黑色电池制备的黑组件外观效果图。
图3为本发明实施例1黑色电池制备的黑组件外观细节图。
图例说明:
1、氧化层;2、高折射率氮化硅膜层;3、低折射率氮化硅膜层;4、超低折射率氮化硅膜层;5、氧化硅膜层;6、基底;7、光伏玻璃。
具体实施方式
以下结合说明书附图和具体优选的实施例对本发明作进一步描述,但并不因此而限制本发明的保护范围。以下实施例中所采用的材料和仪器均为市售。
实施例1:
一种适用黑组件的晶硅太阳能电池正膜膜层结构,如图1所示,包括基底6以及在基底6表面由下至上依次设置的氧化层1、高折射率氮化硅膜层2、低折射率氮化硅膜层3、超低折射率氮化硅膜层4和氧化硅膜层5,所述高折射率氮化硅膜层2、低折射率氮化硅膜层3、超低折射率氮化硅膜层4、氧化硅膜层5的折射率依次递减。在组件测试PID时,氧化硅膜层5上还设有光伏玻璃7。
本发明的该适用黑组件的晶硅太阳能电池正膜膜层结构可有效提升膜层均匀性,保证整体黑色效果。该正膜膜层结构除底部氧化层1外,其PECVD沉积的各层薄膜折射率由下至上逐步减小,结合光伏玻璃低折射率特性,很好的增加了太阳光中长波和短波的吸收,最大程度地降低了正面反射率,达到理想的陷光效果,使组件外观效果呈现黑色,从而有效改善了黑色电池片存在边缘发蓝和片间色差问题(发蓝或发灰)。
本实施例中,高折射率氮化硅膜层2的厚度为12nm,折射率为2.35,低折射率氮化硅膜层3的厚度为18nm,折射率为2.1,超低折射率氮化硅膜层4的厚度为20nm,折射率为1.9。
本实施例中,氧化硅膜层5的厚度为30nm,折射率为1.6。
本实施例中,高折射率氮化硅膜层2、低折射率氮化硅膜层3、超低折射率氮化硅膜层4和氧化硅膜层5的总厚度为80nm,综合折射率为2.1。
本实施例中,晶硅太阳能电池为PERC电池,氧化层1为氧化硅层,是热氧化生长的氧化硅层,厚度3nm。若晶硅太阳能电池为TOPCon电池时,氧化层1则为ALD技术沉积的氧化铝层,厚度为1.5nm。
本实施例中,基底6为硅基底。
一种本实施例的适用黑组件的晶硅太阳能电池正膜膜层结构的制备方法,除了底层氧化层1外,其它膜层均采用管式PECVD设备沉积,包括以下步骤:
S1、氧化层1的制备:在硅基底上采用热氧化生长法制备氧化硅层,温度为700℃,氧气流量3600sccm,反应时间1800s,得到氧化层1。
S2、高折射率氮化硅膜层2的沉积:将带氧化层1的硅基底加载在石墨舟中,进入石英管,进行PECVD沉积:反应温度升至500℃,通入体积流量比为1∶4.1的SiH4和NH3,压力设定为240Pa,射频电源频率40KHz,射频功率6000W,反应时间160s,占空比为1∶16,沉积膜层厚度为12nm,折射率为2.35,得到高折射率氮化硅膜层2。
S3、低折射率氮化硅膜层3的沉积:将反应温度控制500℃,通入体积流量比为1∶9的SiH4和NH3,压力设定为240Pa,射频电源频率40KHz,射频功率12500W,反应时间170s,占空比为1∶10,得到低折射率氮化硅膜层3,膜层厚度为18nm,折射率为2.1。
S4、超低折射率氮化硅膜层4的沉积:将反应温度控制在500℃,通入体积流量比为1∶10的SiH4和NH3,压力设定为240Pa,射频电源频率40KHz,射频功率12500W,反应时间170s,占空比为1∶10,得到超低折射率氮化硅膜层4,膜层厚度为20nm,折射率为1.9。
S5、氧化硅膜层5的沉积:将反应温度控制在500℃,通入体积流量比为1∶12的SiH4和N2O,压力设定为180Pa,射频电源频率40KHz,射频功率6250W,反应时间300s,占空比为1∶20,得到氧化硅膜层5,最终得到适用黑组件的晶硅太阳能电池正膜膜层结构,外观如图2和图3所示,由图3可知,该晶硅太阳能电池正膜膜层结构边缘无发蓝情况,颜色一致性好。
以常规黑组件为对比组件,该常规黑组件的膜层结构主要由以下膜层构成:氧化硅+氮化硅+氮氧化硅+氧化硅,将本实施例组件与对比组件的PERC电池黑组件在85℃、85%湿度、电压1500V、96h的条件下进行PID可靠性测试,结果是合格的,如表1所示,说明本发明的正面膜层结构抗PID性能是合格的,且较常规的黑组件工艺抗PID性能更优异。
表1本实施例和对比实验的膜层工艺组件PID验证
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制。虽然本发明已以较佳实施例揭示如上,然而并非用以限定本发明。任何熟悉本领域的技术人员,在不脱离本发明的精神实质和技术方案的情况下,都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰,均仍属于本发明技术方案保护的范围内。
Claims (9)
1.一种适用黑组件的晶硅太阳能电池正膜膜层结构,其特征在于,包括由下至上依次设置的氧化层(1)、高折射率氮化硅膜层(2)、低折射率氮化硅膜层(3)、超低折射率氮化硅膜层(4)和氧化硅膜层(5),所述高折射率氮化硅膜层(2)、低折射率氮化硅膜层(3)、超低折射率氮化硅膜层(4)、氧化硅膜层(5)的折射率依次递减。
2.根据权利要求1所述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,其特征在于,所述高折射率氮化硅膜层(2)的厚度为10nm~15nm,所述高折射率氮化硅膜层(2)的折射率为2.3~2.35;所述低折射率氮化硅膜层(3)的厚度为15nm~20nm,所述低折射率氮化硅膜层(3)的折射率为2.05~2.1;所述超低折射率氮化硅膜层(4)的厚度为15nm~20nm,所述超低折射率氮化硅膜层(4)的折射率为1.9~1.95。
3.根据权利要求2所述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,其特征在于,所述氧化硅膜层(5)的厚度为25nm~35nm,所述氧化硅膜层(5)的折射率为1.5~1.7。
4.根据权利要求1~3中任一项所述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,其特征在于,所述高折射率氮化硅膜层(2)、低折射率氮化硅膜层(3)、超低折射率氮化硅膜层(4)、氧化硅膜层(5)的总厚度为65nm~90nm,所述高折射率氮化硅膜层(2)、低折射率氮化硅膜层(3)、超低折射率氮化硅膜层(4)、氧化硅膜层(5)的综合折射率为2.05±0.15。
5.根据权利要求1~3中任一项所述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,其特征在于,所述晶硅太阳能电池为PERC电池或者N型IBC电池时,所述氧化层(1)为热氧化生长的氧化硅层,所述氧化层(1)的厚度为1nm~5nm;所述晶硅太阳能电池为TOPCon电池或者P型IBC电池时,所述氧化层(1)为原子层沉积的氧化铝层,所述氧化层(1)的厚度为1nm~2nm。
6.根据权利要求1~3中任一项所述的一种适用黑组件的晶硅太阳能电池正膜膜层结构,其特征在于,还包括基底(6),所述氧化层(1)设于基底(6)上,所述基底(6)为硅基底。
7.一种如权利要求1~6中任一项所述的适用黑组件的晶硅太阳能电池正膜膜层结构的制备方法,其特征在于,包括以下步骤:
S1、在基底(6)上制备氧化层(1);
S2、高折射率氮化硅膜层(2)的沉积:将带氧化层(1)的基底(6)进行PECVD沉积,沉积条件为:反应温度升至450℃~550℃,通入体积流量比为1∶3~5的SiH4和NH3,压力设定为200Pa~250Pa,射频电源频率为40KHz~120KHz,射频功率为6000W~13000W,反应时间为110s~160s,占空比为1∶15~20,得到高折射率氮化硅膜层(2);
S3、低折射率氮化硅膜层(3)的沉积:将反应温度控制在450℃~550℃,通入体积流量比为1∶9的SiH4和NH3,压力设定为210Pa~260Pa,射频电源频率为40KHz~120KHz,射频功率为10000W~13000W,反应时间为160s~190s,占空比为1∶9~15,得到低折射率氮化硅膜层(3);
S4、超低折射率氮化硅膜层(4)的沉积:将反应温度控制在450℃~550℃,通入体积流量比为1∶10~12的SiH4和NH3,压力设定为220Pa~270Pa,射频电源频率为40KHz~120KHz,射频功率为10000W~13000W,反应时间为160s~190s,占空比为1∶9~15,得到超低折射率氮化硅膜层(4);
S5、氧化硅膜层(5)的沉积:将反应温度控制在450℃~550℃,通入体积流量比为1∶12的SiH4和N2O,压力设定为140Pa~190Pa,射频电源频率为40KHz~120KHz,射频功率为5000W~7000W,反应时间为280s~350s,占空比为1∶15~20,得到氧化硅膜层(5)。
8.根据权利要求7所述的一种适用黑组件的晶硅太阳能电池正膜膜层结构的制备方法,其特征在于,步骤S1中,所述氧化层(1)为氧化硅层时,通过热氧化生长,工艺条件为:温度控制在680℃~720℃,氧气流量为600sccm~12000sccm,反应时间为900s~1800s。
9.根据权利要求7所述的一种适用黑组件的晶硅太阳能电池正膜膜层结构的制备方法,其特征在于,步骤S1中,所述氧化层(1)为氧化铝层时,通过原子层沉积制备,制备方法包括TMA吸附反应、第一氮气吹扫、水分子吸附反应、第二氮气吹扫;工艺条件为:温度控制在180℃~200℃,单循环通气时间比TMA∶第一氮气∶H2O∶第二氮气=4∶8∶3∶9,工艺进行14个~16个循环,反应腔体压力为4mbar~5mbar。
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CN211654833U (zh) * | 2020-04-09 | 2020-10-09 | 浙江爱旭太阳能科技有限公司 | 一种用于制备黑组件太阳能电池的正膜结构 |
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