CN114883398A - Gallium nitride device and switching power supply product with same - Google Patents
Gallium nitride device and switching power supply product with same Download PDFInfo
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- CN114883398A CN114883398A CN202210295108.2A CN202210295108A CN114883398A CN 114883398 A CN114883398 A CN 114883398A CN 202210295108 A CN202210295108 A CN 202210295108A CN 114883398 A CN114883398 A CN 114883398A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 40
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 239000010410 layer Substances 0.000 claims abstract description 141
- 239000002356 single layer Substances 0.000 claims abstract description 53
- 239000010409 thin film Substances 0.000 claims abstract description 53
- 238000002161 passivation Methods 0.000 claims abstract description 50
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000007704 transition Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 37
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 4
- 230000005684 electric field Effects 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention provides a gallium nitride device and a switching power supply product with the same, wherein the gallium nitride device comprises: a substrate; a transition layer disposed on one side of the substrate; the buffer layer is arranged on one side, far away from the substrate, of the transition layer; the channel layer is arranged on one side, far away from the transition layer, of the buffer layer; the barrier layer is arranged on one side, away from the buffer layer, of the channel layer; the first passivation layer is arranged on one side, away from the channel layer, of the barrier layer; the single-layer thin film field plate is arranged on one side, far away from the barrier layer, of the first passivation layer; and the second passivation layer is arranged on one side of the single-layer thin film field plate, which is far away from the first passivation layer. Therefore, a single-layer thin-film field plate is arranged between the first passivation layer and the second passivation layer, so that the electric field distribution can be better adjusted, and the electric field is prevented from being concentrated on the edge of the grid electrode or the edge area of the metal field plate; and the gallium nitride device with the structure can reduce the cost and the processing period in the processing.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a gallium nitride device and a switching power supply product with the gallium nitride device.
Background
The third generation semiconductor materials represented by GaN have many excellent characteristics, such as wide bandgap, high voltage resistance, high temperature resistance, high electron saturation velocity, and radiation resistance. Furthermore, the interface of the AlGaN/GaN heterojunction structure can generate two-dimensional electron gas with high concentration, and a channel structure with very low on-resistance can be manufactured. These characteristics make GaN materials have better performance parameters than first-generation semiconductor materials such as Si, for example, the Baliga FOM (a figure of merit for measuring the high power characteristics of the material) of GaN is more than 800 times that of Si materials, and GaN devices can theoretically realize switching speeds more than 100 times higher than Si-based devices. Despite these advantages of GaN materials, GaN devices still have some problems in practical use. For example, how to optimize the electric field distribution on the surface of the device, how to increase the electron concentration of the conductive channel, how to optimize the current collapse effect of the device, how to improve the reliability of the device, and the like.
Therefore, there is still a need for further improvement in current gallium nitride devices.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, an object of the present invention is to provide a gallium nitride device and a switching power supply product having the same, wherein the gallium nitride device can modulate electric field distribution, and has a short processing cycle and low cost.
In one aspect of the present invention, there is provided a gallium nitride device comprising: a substrate; a transition layer on one side of the substrate; the buffer layer is arranged on one side, far away from the substrate, of the transition layer; the channel layer is arranged on one side, far away from the transition layer, of the buffer layer; the barrier layer is arranged on one side, far away from the buffer layer, of the channel layer; the first passivation layer is arranged on one side, away from the channel layer, of the barrier layer; the single-layer thin film field plate is arranged on one side, away from the barrier layer, of the first passivation layer; and the second passivation layer is arranged on one side of the single-layer thin-film field plate, which is far away from the first passivation layer. Therefore, a single-layer thin-film field plate is arranged between the first passivation layer and the second passivation layer, so that the electric field distribution can be better adjusted, and the electric field is prevented from being concentrated on the edge of the grid electrode or the edge area of the metal field plate; and the gallium nitride device with the structure can reduce the cost and the processing period in the processing.
According to some embodiments of the invention, the single layer thin film field plate consists essentially of a high resistance material having a resistivity of 10 7 -10 11 Ω·cm。
According to some embodiments of the invention, the thickness of the single-layer thin film field plate is 150nm to 1000 nm.
According to some embodiments of the invention, the material forming the single layer thin film field plate is selected from SIPOS, AlN, Ga 2 O 3 At least one of (1).
According to some embodiments of the invention, the mass percentage of the high-resistance material in the single-layer thin-film field plate is 20% to 100%.
According to some embodiments of the invention, an orthographic projection of the single-layer thin film field plate on the substrate is the same as an orthographic projection of the barrier layer on the substrate.
According to some embodiments of the invention, the gallium nitride device further comprises: a source electrode in contact with the channel layer through a first via that penetrates the second passivation layer, the single-layer thin film field plate, the first passivation layer, and the barrier layer and extends to the channel layer; a drain electrode in contact with the channel layer through a second via that extends through the second passivation layer, the single-layer thin film field plate, the first passivation layer, and the barrier layer and extends to the channel layer; a gate disposed in a third via that penetrates the second passivation layer and the single-layer thin-film field plate.
According to some embodiments of the invention, the second passivation layer covers an edge side surface of the single-layer thin film field plate, an edge side surface of the first passivation layer, an edge side surface of the barrier layer, and an edge side surface of the channel layer.
In another aspect of the present invention, a switching power supply product is provided, which includes the aforementioned gallium nitride device. Therefore, the switching power supply product has all the characteristics and advantages of the gallium nitride device, and the description is omitted here. Overall, there are at least the advantages of more uniform electric field distribution and lower cost.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 shows a schematic structural diagram of a gallium nitride device according to an embodiment of the present invention.
Reference numerals:
100: a substrate; 200: a transition layer; 300: a buffer layer; 400: a channel layer; 500: a barrier layer; 600: a first passivation layer; 700: a single layer thin film field plate; 800: a second passivation layer; 10: a source electrode; 20: a drain electrode; 30: and a gate.
Detailed Description
The following describes embodiments of the present invention in detail. The following examples are illustrative only and are not to be construed as limiting the invention. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
In an aspect of the present invention, referring to fig. 1, a gan device is proposed, which includes a substrate 100, a transition layer 200 located on one side of the substrate 100, a buffer layer 300 located on one side of the transition layer 200 away from the substrate 100, a channel layer 400 located on one side of the buffer layer 300 away from the transition layer 200, a barrier layer 500 located on one side of the channel layer 400 away from the buffer layer 300, a first passivation layer 600 located on one side of the barrier layer 500 away from the channel layer 400, and a single-layer thin-film field plate 700 located on one side of the first passivation layer 600 away from the barrier layer 500, a second passivation layer 800 located on one side of the single-layer thin-film field plate 700 away from the first passivation layer 600. Therefore, only one single-layer thin-film field plate 700 is arranged between the first passivation layer 600 and the second passivation layer 800, so that the electric field distribution can be better adjusted, and the electric field is prevented from being concentrated on the edge of the gate 30 or the edge region of the metal field plate; and the gallium nitride device with the structure can reduce the cost and the processing period in the processing.
In the related art, a plurality of film layers are required to be arranged in the gallium nitride device for improving the electric field distribution, the number of times of photoetching and etching is increased due to the arrangement of the film layers, the cost of the photoresist and the developing solution is high, the production period is inevitably prolonged due to the arrangement of the film layers, and the production cost is improved.
According to some embodiments of the invention, the single-layer thin-film field plate 700 is comprised primarily of a high-resistivity material having a resistivity of 10 7 -10 11 Omega cm. Thus, when a voltage is applied across the single-layer thin-film field plate 700, the potential of the field plate is uniformly distributed with the resistance, since the single-layer thin-film field plate 700 has a uniform resistivity, according to
When a turn-off high voltage is applied to the drain electrode 20, the electric field of the single-layer thin-film field plate 700 layer is uniformly distributed.
According to some embodiments of the present invention, the single-layer thin film field plate 700 has a thickness of 150nm to 1000nm, and specifically, may have a thickness of 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, and 950 nm. Therefore, the single-layer thin-film field plate 700 with the thickness is convenient to prepare, the whole thickness of the device cannot be obviously increased, and meanwhile the requirement of the single-layer thin-film field plate 700 on the resistivity can be met.
According to some embodiments of the invention, the material forming the single layer thin film field plate 700 is selected from SIPOS, AlN, Ga 2 O 3 At least one of (1). Therefore, the high-resistance materials all have uniform resistivity, and theoretically, the potential distribution is linear, so that when the drain electrode 20 of the gallium nitride device is applied with a turn-off high voltage, the single-layer thin-film field plate 700 has uniform electric field distribution, and the effect of improving the electric field distribution of the device is further realized. In addition, when the single-layer thin film field plate 700 contains a doping material, the doping material may be aluminum, gallium, or the like. In some embodiments, the high resistance material is semi-insulating polysilicon (SIPOS), and the doping material may be at least one of aluminum and gallium; the high-resistance material is AlN, and the doped material can be gallium; the high-resistance material is semi-insulating polycrystalline silicon (SIPOS), and the doping material can be at least one of aluminum and gallium; the high-resistance material is Ga 2 O 3 The doping material may be aluminum.
According to some embodiments of the present invention, the mass percentage of the high resistance material in the single-layer thin film field plate 700 is 20% to 100%. Specifically, it may be 30%, 40%, 50%, 60%, 70%, 80%, 90%, and the like. Therefore, the single-layer thin-film field plate 700 has a better modulation effect on the electric field, and the state of optimally improving the electric field distribution of the device can be achieved.
According to some embodiments of the present invention, the orthographic projection of the single-layer thin film field plate 700 on the substrate 100 is the same as the orthographic projection of the barrier layer 500 on the substrate 100. Thus, the single-layer thin-film field plate 700 can play a role of uniformly teaching an electric field near the barrier layer 500. The inventors have found that if the orthographic projection of the single-layer thin-film field plate 700 on the substrate 100 is smaller than the orthographic projection of the barrier layer 500 on the substrate 100, the barrier layer 500 will have a strong electric field at the position not covered by the single-layer thin-film field plate 700, resulting in too high local field strength and device breakdown.
According to some embodiments of the present invention, the gallium nitride device may further include a source electrode 10, a drain electrode 20, and a gate electrode 30, the source electrode 10 being in contact with the channel layer 400 through a first via hole that penetrates the second passivation layer 800, the single-layer thin film field plate 700, the first passivation layer 600, and the barrier layer 500 and extends to the channel layer 400, the drain electrode 20 being in contact with the channel layer 400 through a second via hole that penetrates the second passivation layer 800, the single-layer thin film field plate 700, the first passivation layer 600, and the barrier layer 500 and extends to the channel layer 400, the gate electrode 30 being disposed in a third via hole that penetrates the second passivation layer 800 and the single-layer thin film field plate 700.
According to an embodiment of the present invention, the second passivation layer 800 covers the edge side surfaces disposed on the single-layer thin film field plate 700, the first passivation layer 600, the barrier layer 500, and the channel layer 400. Therefore, the single-layer thin film field plate 700 is completely covered by the first passivation layer 600 and the second passivation layer 800, so as to prevent the single-layer thin film field plate 700 from contacting with the conductive layer structure such as the source electrode 10, the drain electrode 20 or the gate electrode 30, and the like, and affecting the performance of the gallium nitride device.
According to the embodiment of the present invention, the specific materials of the structures of the gan device other than the single-layer thin film field plate 700 are not particularly required, and those skilled in the art can flexibly select the materials according to actual requirements. In some embodiments, specific materials of the substrate 100 include, but are not limited to, silicon, gallium nitride, sapphire, etc., specific materials of the transition layer 200 include, but are not limited to, aluminum nitride, and materials of the buffer layer 300 include, but are not limited to, gallium nitride; the material of the channel layer 400 includes, but is not limited to, gallium nitride; the material of the barrier layer 500 includes, but is not limited to, AlGaN, and the material of the passivation layers (the first passivation layer 600 and the second passivation layer 800) includes, but is not limited to, silicon oxide, silicon nitride, silicon oxynitride, and the like; specific materials of the source electrode 10, the drain electrode 20 and the gate electrode 30 include, but are not limited to, conductive materials such as aluminum, titanium and the like.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (9)
1. A gallium nitride device, comprising:
a substrate;
a transition layer on one side of the substrate;
the buffer layer is arranged on one side, far away from the substrate, of the transition layer;
the channel layer is arranged on one side, far away from the transition layer, of the buffer layer;
the barrier layer is arranged on one side, far away from the buffer layer, of the channel layer;
the first passivation layer is arranged on one side, away from the channel layer, of the barrier layer;
the single-layer thin film field plate is arranged on one side, away from the barrier layer, of the first passivation layer;
and the second passivation layer is arranged on one side of the single-layer thin-film field plate, which is far away from the first passivation layer.
2. The gallium nitride device of claim 1, wherein the single-layer thin-film field plate consists essentially of a high-resistivity material having a resistivity of 10 7 -10 11 Ω·cm。
3. The gallium nitride device according to claim 1, wherein the single-layer thin-film field plate has a thickness of 150nm to 1000 nm.
4. The gallium nitride device of claim 1, wherein the single-layer thin-film field plate is formed of a material selected from the group consisting of SIPOS, AlN, Ga 2 O 3 At least one of (1).
5. The GaN device according to any of claims 1-4, wherein the mass percentage of the high-resistance material in the single-layer thin-film field plate is 20% -100%.
6. The GaN device of any of claims 1-4, wherein an orthographic projection of the single-layer thin film field plate on the substrate is the same as an orthographic projection of the barrier layer on the substrate.
7. The gallium nitride device according to any one of claims 1 to 4, further comprising:
a source electrode in contact with the channel layer through a first via that penetrates the second passivation layer, the single-layer thin film field plate, the first passivation layer, and the barrier layer and extends to the channel layer;
a drain electrode in contact with the channel layer through a second via that extends through the second passivation layer, the single-layer thin film field plate, the first passivation layer, and the barrier layer and extends to the channel layer;
a gate disposed in a third via that penetrates the second passivation layer and the single-layer thin-film field plate.
8. The GaN device of any of claims 1-4, wherein the second passivation layer covers an edge side surface of the single-layer thin film field plate, an edge side surface of the first passivation layer, an edge side surface of the barrier layer, and an edge side surface of the channel layer.
9. A switching power supply product comprising the gallium nitride device according to any one of claims 1 to 8.
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| CN202210295108.2A CN114883398A (en) | 2022-03-23 | 2022-03-23 | Gallium nitride device and switching power supply product with same |
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| CN202210295108.2A CN114883398A (en) | 2022-03-23 | 2022-03-23 | Gallium nitride device and switching power supply product with same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117219672A (en) * | 2023-10-16 | 2023-12-12 | 乐山希尔电子股份有限公司 | Quasi-vertical gallium nitride accumulation type power device |
| CN117423725A (en) * | 2023-12-01 | 2024-01-19 | 江苏希尔半导体有限公司 | High-voltage transverse GaN high-electron mobility transistor |
-
2022
- 2022-03-23 CN CN202210295108.2A patent/CN114883398A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117219672A (en) * | 2023-10-16 | 2023-12-12 | 乐山希尔电子股份有限公司 | Quasi-vertical gallium nitride accumulation type power device |
| CN117219672B (en) * | 2023-10-16 | 2024-06-04 | 乐山希尔电子股份有限公司 | Quasi-vertical gallium nitride accumulation type power device |
| CN117423725A (en) * | 2023-12-01 | 2024-01-19 | 江苏希尔半导体有限公司 | High-voltage transverse GaN high-electron mobility transistor |
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