CN114875362A - Physical vapor deposition equipment for accelerating cooling of cavity - Google Patents
Physical vapor deposition equipment for accelerating cooling of cavity Download PDFInfo
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- CN114875362A CN114875362A CN202210808343.5A CN202210808343A CN114875362A CN 114875362 A CN114875362 A CN 114875362A CN 202210808343 A CN202210808343 A CN 202210808343A CN 114875362 A CN114875362 A CN 114875362A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physical Vapour Deposition (AREA)
Abstract
The invention provides a physical vapor deposition device for accelerating the cooling of a cavity, which comprises: the cooling structure comprises a cavity, a switching flange plate, a cooling pipeline, a lifting base, an epitaxial ring and a cavity wall baffle plate, wherein the switching flange plate is arranged on the cavity, a cavity is formed between the switching flange plate and the cavity, the edge of the outer ring at the bottom end of a switching part is fixed at the top end of the cavity, and an extending part is arranged below the switching part and extends into the cavity; the cooling pipelines are respectively arranged in the switching part and the extension part; the lifting base is positioned in the chamber and used for bearing and driving the wafer to move up and down; the epitaxial ring is arranged on the periphery of the lifting base and is far away from the sputtering surface of the wafer; the chamber wall baffle is located epitaxial ring periphery, and the outer ring edge of chamber wall baffle upper end is fixed in the inner ring edge on switching portion top, and the downward vertical setting of chamber wall baffle just is located the inboard of extension. The equipment in the invention is beneficial to the rapid heat transfer, so that the heat conduction efficiency and the heat dissipation efficiency are higher, the effect of rapidly cooling the cavity is realized, and the defects in the prior art are overcome.
Description
Technical Field
The invention belongs to the field of manufacturing of semiconductor high-end equipment, and particularly relates to physical vapor deposition equipment for accelerating the cooling of a cavity.
Background
In the magnetron sputtering coating process, under the combined action of a magnetron and negative bias of a target material, ionized high-density high-energy inert gas ions bombard the surface of the target material, target material particles obtained by bombardment deposit on the surface of a wafer to form a film, and continuous and high-speed magnetron sputtering can cause rapid temperature rise of a cavity, a process kit in the cavity and the wafer; sometimes, in order to increase the sputtering rate of the coating as much as possible, a high-power direct-current power supply is used for sputtering, so that the plasma itself and the target generate a large amount of heat. For example, the heat generated during the process of depositing thick aluminum is large, but the heat dissipation of the vacuum chamber is very slow, too high chamber temperature may cause the deformation of process kits such as chamber wall baffles and the like due to overheating, which may affect the service life of the process kits in the chamber, and too high wafer temperature may also affect the film forming quality.
In order to accelerate the heat dissipation and cooling of the wafer, a wafer pedestal with a gas back pressure is usually used to accelerate the heat conduction, and a wafer clamping ring is also used to ensure good contact and heat conduction between the wafer and the wafer pedestal for better cooling effect. Although the clamping ring is beneficial to controlling the temperature of the wafer to a certain extent, the wafer is easily adhered to the clamping ring, and the problem of over-high edge defects of the wafer is also caused.
Through setting up chamber wall baffle and shielding plate into a whole of fixed connection, hug closely the chamber wall baffle on the inner wall in chamber wall simultaneously, the design that combines to set up the cooling circuit of the large tracts of land in the chamber wall in chamber wall baffle place area again, though can increase heat radiating area and heat-conduction efficiency, the manufacturing process of the cooling circuit of design large tracts of land in the chamber wall is fairly complicated, and still there is the cooling circuit to absorb heat after the inflation cause the chamber wall to take place expend with heat and contract with cold deformation, and then lead to the chamber wall after the deformation can't closely laminate with by the cooling external member (like the chamber wall baffle) and influence heat-conduction's problem.
In the existing coating equipment, especially 8-inch aluminum-copper process cavities are generally only provided with traditional flat plate type water-cooling adapter flanges, or two or more cooling water discs are welded outside the cavity wall for cooling the cavity wall, and because the internal process kit is not tightly attached to the flat plate type water-cooling adapter flanges or the cooling water discs, the cooling degree of the process kit is still limited.
Therefore, there is a need to provide an improved solution to the above-mentioned deficiencies of the prior art.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a physical vapor deposition apparatus for accelerating a temperature reduction of a chamber, so as to solve the problems in the prior art that a cooling effect is not ideal due to an unreasonable design of a cooling kit, the processing difficulty of the cooling kit is high, and heat conduction is affected because the cooling kit cannot be tightly attached to a cooled kit due to a thermal expansion and contraction principle.
To achieve the above and other related objects, the present invention provides a physical vapor deposition apparatus for accelerating cooling of a chamber, the apparatus comprising:
a cavity;
the adapter flange is arranged on the cavity, a cavity is formed between the adapter flange and the cavity, the adapter flange comprises an adapter part and an extension part, the outer ring edge of the bottom end of the adapter part is fixed at the top end of the cavity, and the extension part is arranged below the adapter part and extends into the cavity;
the cooling pipeline is respectively arranged inside the switching part and the extending part and is used for rapidly cooling the cavity;
the lifting base is positioned in the cavity and used for bearing the wafer and driving the wafer to move up and down;
the epitaxial ring is arranged on the periphery of the lifting base and is far away from the sputtering surface of the wafer;
the cavity wall baffle is positioned on the periphery of the extension ring, the outer ring edge at the upper end of the cavity wall baffle is fixed on the inner ring edge at the top end of the switching part, and the cavity wall baffle is vertically arranged downwards and positioned on the inner side of the extension part.
Preferably, the cavity wall baffle comprises a vertical part and a bent part, an outer ring edge at the upper end of the vertical part is fixedly connected to an inner ring edge at the upper end of the adapter part, and the lower end of the vertical part extends downwards to shield the inner wall of the cavity; the bending part extends towards the inside of the cavity and extends upwards in a semi-surrounding manner.
Preferably, equipment still includes the activity ring, the activity ring is half encirclement form and downwardly extending, the activity ring back-off in the kink with the ring top is extended, and with the kink the horizontal projection part coincidence of ring is extended.
Preferably, the outer extension ring part faces away from the axial center position of the lifting base and extends upwards to the half-enclosed space of the movable ring.
Preferably, the extension part is a hollow circular column, and the inner diameter of the upper end of the hollow circular column is smaller than that of the lower end of the hollow circular column.
Preferably, when the chamber is at room temperature, a gap is formed between the inner wall of the extension part and the outer wall of the chamber wall baffle, and the gap gradually increases from top to bottom.
Preferably, the cooling pipeline in the adapter part is an annular pipeline, and the annular pipeline is wound along the circumferential direction in the adapter part.
Preferably, the cooling pipeline inside the extension portion comprises a plurality of V-shaped pipelines, the V-shaped pipelines are sequentially arranged around the inside of the extension portion, and two adjacent V-shaped pipelines are communicated with each other to form V-shaped cooling pipelines which are communicated with each other in a V-shape.
Preferably, an inlet pipeline is further arranged in the switching portion, the inlet pipeline is communicated with the annular pipeline and the V-shaped pipeline, and after cooling liquid is introduced from the inlet pipeline, the cooling liquid extends along the annular pipeline to enter the switching portion and extends along the V-shaped pipeline to enter the extension portion.
Preferably, each V-shaped pipeline comprises a pipeline connecting port and pipelines arranged at two ends of the pipeline connecting port, and each pipeline connecting port is arranged along the circumferential direction of the bottom end of the extension portion.
As mentioned above, the physical vapor deposition equipment for accelerating the cooling of the chamber has the following beneficial effects:
in the invention, the switching part and the extension part of the switching flange plate are both provided with cooling pipelines, so that a chamber can be cooled rapidly; set up pipeline connector and V type pipeline on the extension, the setting of pipeline connector is convenient for process and is generated V type pipeline to solve the big problem of the cooling external member processing degree of difficulty, and the cooling effect that V type pipeline set up than traditional parallel mode is better.
According to the invention, after the extension part is heated and expanded, the diameter of the inner ring is reduced and the outer wall of the cavity wall baffle is extruded until the inner wall of the extension part is tightly attached to the outer wall of the cavity wall baffle, so that heat conduction and heat dissipation are facilitated; in addition, a gap is reserved between the inner wall of the extension part and the outer wall of the cavity wall baffle, so that on one hand, the installation and the disassembly operation of the cavity wall baffle are convenient, on the other hand, the diameter of the inner ring of the extension part can be prevented from being reduced after the extension part is heated and expanded, and the outer wall of the cavity wall baffle is excessively extruded to cause deformation, arrangement and damage of the cavity wall baffle; the gap is gradually increased from the top end to the bottom end, so that the cavity wall baffle can be prevented from being extruded from the upper end after the extension part is heated and expanded, the inner wall of the extension part can be attached to the outer wall of the cavity wall baffle in a manner of extruding, and meanwhile, the extension part and the cavity wall baffle have larger contact area, so that the rapid heat transfer is facilitated, and the heat conduction efficiency and the heat dissipation efficiency are higher; the arrangement of the epitaxial ring can accelerate the heat conduction of the lifting base so as to quickly reduce the temperature of the wafer, and can also prevent deposition particles from being sputtered to the bottom of the cavity in the deposition process.
The equipment also comprises a movable ring, wherein the movable ring is reversely buckled above the bent part and the epitaxial ring of the cavity wall baffle plate, so that the effect of accelerating heat conduction can be realized, and deposited particles can be prevented from being sputtered to the bottom of the cavity through a gap between the epitaxial ring and the bent part in the deposition process; when the lifting base drives the extension ring to move upwards, the movable ring can be jacked up, when the lifting base drives the extension ring to move downwards, the movable ring can be dragged and dropped onto the bent part, and the movable ring can ensure that deposited particles cannot be sputtered to the bottom of the cavity in the deposition process in all movement processes; meanwhile, in the sputtering process of the deposited particles, the surface temperature of the wafer is sharply increased, heat is transferred to the cavity wall baffle as soon as possible through the epitaxial ring, and then the heat is dissipated through the adapter flange plate to achieve the effect of rapid cooling.
Drawings
FIG. 1 is a schematic cross-sectional perspective view of a physical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional plan view of a physical vapor deposition apparatus according to an embodiment of the present invention.
Fig. 3 is a schematic perspective view of an adapter flange according to an embodiment of the present invention.
Fig. 4 shows an enlarged view of a in fig. 2.
In the figure: 100. a cavity; 200. transferring a flange plate; 201. a switching part; 202. an extension portion; 300. a lifting base; 400. an epitaxial ring; 500. a chamber wall baffle; 501. a vertical portion; 502. a bending section; 600. a movable ring; 700. a gap.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1 to 4. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
In the invention, the switching part and the extension part of the switching flange plate are both provided with cooling pipelines, so that a chamber can be cooled rapidly; the pipeline connecting port and the V-shaped pipeline are arranged on the extension part, the pipeline connecting port is convenient to process and generate the V-shaped pipeline, so that the problem that the processing difficulty of the cooling sleeve is high is solved, and the cooling effect of the V-shaped pipeline is better than that of the V-shaped pipeline arranged in a traditional parallel mode; according to the invention, after the extension part is heated and expanded, the diameter of the inner ring is reduced and the outer wall of the cavity wall baffle is extruded until the inner wall of the extension part is tightly attached to the outer wall of the cavity wall baffle, so that heat conduction and heat dissipation are facilitated; in addition, a gap is reserved between the inner wall of the extension part and the outer wall of the cavity wall baffle, so that on one hand, the installation and the disassembly operation of the cavity wall baffle are convenient, on the other hand, the diameter of the inner ring of the extension part can be prevented from being reduced after the extension part is heated and expanded, and the outer wall of the cavity wall baffle is excessively extruded to cause deformation, arrangement and damage of the cavity wall baffle; the gap is gradually increased from the top end to the bottom end, so that the cavity wall baffle can be prevented from being extruded from the upper end after the extension part is heated and expanded, the inner wall of the extension part can be attached to the outer wall of the cavity wall baffle in a manner of extruding, and meanwhile, the extension part and the cavity wall baffle have larger contact area, so that the rapid heat transfer is facilitated, and the heat conduction efficiency and the heat dissipation efficiency are higher; the epitaxial ring can accelerate the heat conduction of the lifting base so as to quickly reduce the temperature of the wafer and prevent deposited particles from being splashed to the bottom of the cavity in the deposition process; the equipment also comprises a movable ring, wherein the movable ring is reversely buckled above the bent part and the epitaxial ring of the cavity wall baffle plate, so that the effect of accelerating heat conduction can be realized, and deposited particles can be prevented from being sputtered to the bottom of the cavity through a gap between the epitaxial ring and the bent part in the deposition process; when the lifting base drives the extension ring to move upwards, the movable ring can be jacked up, when the lifting base drives the extension ring to move downwards, the movable ring can be dragged and dropped onto the bent part, and the movable ring can ensure that deposited particles cannot be sputtered to the bottom of the cavity in the deposition process in all movement processes; meanwhile, in the sputtering process of the deposited particles, the surface temperature of the wafer is sharply increased, heat is transferred to the cavity wall baffle as soon as possible through the epitaxial ring, and then the heat is dissipated through the adapter flange plate to achieve the effect of rapid cooling.
The problem of among the prior art because of the cooling effect that the cooling external member design is unreasonable to lead to is unsatisfactory, the cooling external member processing degree of difficulty is big, lead to the cooling external member to hug closely with being cooled off the external member because of expend with heat and contract with cold principle and influence heat-conduction is solved.
Referring to fig. 1 to 4, the present invention provides a physical vapor deposition apparatus for accelerating cooling of a chamber, the apparatus including: the structure comprises a cavity 100, a switching flange 200, a cooling pipeline, a lifting base 300, an extension ring 400 and a cavity wall baffle 500; the adapter flange 200 is mounted on the cavity 100, a cavity is formed between the adapter flange 200 and the cavity 100, the adapter flange 200 comprises an adapter part 201 and an extension part 202, the outer ring edge of the bottom end of the adapter part 201 is fixed at the top end of the cavity 100, and the extension part 202 is arranged below the adapter part 201 and extends into the cavity 100; the cooling pipelines are respectively arranged in the switching part 201 and the extension part 202 and are used for rapidly cooling the chamber; the lifting base 300 is positioned in the chamber and used for bearing the wafer and driving the wafer to move up and down; the epitaxial ring 400 is arranged at the periphery of the lifting base 300 and is far away from the sputtering surface of the wafer, so that the problem of wafer adhesion with the epitaxial ring 400 during vapor deposition can be prevented, the service life of the epitaxial ring 400 can be prolonged, and deposition particles can be prevented from being sputtered to the bottom of the cavity 100 during deposition; the chamber wall baffle 500 is located at the periphery of the outer extension ring 400, the outer ring edge at the upper end of the chamber wall baffle 500 is fixed at the inner ring edge at the top end of the adapter 201, and the chamber wall baffle 500 is vertically arranged downwards and located at the inner side of the extension 202.
Specifically, the chamber 100 is a chamber 100 for a metal film deposition process, and is preferably a chamber 100 for an 8-inch aluminum-copper process; referring to fig. 1 and 3, the adapter flange 200 includes an adapter portion 201 and an extension portion 202, a plurality of connection holes are formed in an outer circumferential edge of the adapter portion 201, and the cavity 100 is fixedly connected to the outer circumferential edge of the bottom end of the adapter portion 201 through the connection holes by a connection member; the extension part 202 is located below the adapter part 201, the extension part 202 and the adapter part 201 can be integrally formed or can be formed by fixedly connecting through a connecting piece, the outer diameter of the extension part 202 is smaller than that of the adapter part 201, preferably, the top end of the extension part 202 is fixedly connected with the edge of an inner ring at the bottom end of the adapter part 201, and the extension part 202 extends into a part of the cavity 100; in addition, the cavity wall baffle 500 is vertically arranged, the upper end of the cavity wall baffle 500 is fixed on the inner ring edge of the top end of the adapter 201, the lower end of the cavity wall baffle 500 extends downwards, the upper end of the cavity wall baffle 500 can be cooled after a cooling pipeline in the adapter 201 is filled with cooling liquid, and the lower end of the cavity wall baffle 500 can be cooled after the cooling pipeline in the extension 202 is filled with cooling liquid, so that the cavity can be rapidly cooled.
In addition, the lifting base 300 includes a base and a lifting mechanism, the lifting mechanism drives the base to move up and down, and the base bears the wafer, and the specific structure of the lifting base 300 is not described herein in detail, and the use requirement can be met.
As an example, the cavity wall baffle 500 includes a vertical portion 501 and a bent portion 502, an outer ring edge of an upper end of the vertical portion 501 is fixedly connected to an inner ring edge of an upper end of the adapter portion 201, a lower end of the vertical portion 501 extends downward to shield an inner wall of the cavity, and the vertical portion 501 is used for preventing deposition particles from being sputtered onto the inner wall of the cavity in a vapor deposition process; the bending part 502 extends towards the inside of the chamber and extends upwards in a semi-surrounding manner, and the bending part 502 is used for preventing deposition particles from being splashed to the bottom of the chamber in the vapor deposition process.
Specifically, the vertical portion 501 of the cavity wall baffle 500 extends downward, and the bottom end of the vertical portion 501 extends out of the bottom end of the extension portion 202 far away from the adapter portion 201, so that a larger contact area is formed between the extension portion 202 and the vertical portion 501, and rapid heat transfer is facilitated.
It should be noted that the cavity wall baffle 500 is the cavity wall baffle 500 made of stainless steel or aluminum alloy, preferably, the cavity wall baffle 500 is the cavity wall baffle 500 made of aluminum alloy, which is convenient for heat conduction and heat dissipation, and the cavity wall baffle 500 is used for preventing deposited particles from sputtering onto the inner wall of the cavity 100 to pollute the environment of the cavity 100 in the vapor deposition process.
By way of example, the apparatus further includes a movable ring 600, the movable ring 600 is in a half-enclosed shape and extends downward, and the movable ring 600 is inverted over the bending portion 502 and the extension ring 400 and coincides with the transverse projection of the bending portion 502 and the extension ring 400.
Specifically, referring to fig. 1 and 3, the movable ring 600 contacts the extending end of the bent portion 502 extending upward in a semi-surrounding manner, so that the movable ring 600 can not only accelerate heat conduction, but also prevent deposited particles from being sputtered to the bottom of the cavity 100 through the gap between the extending ring 400 and the bent portion 502 during deposition.
Illustratively, the extension ring 400 partially faces away from the axial center of the lift base 300 and extends upward into the semi-enclosed space of the movable ring 600.
Specifically, the epitaxial ring 400 can prevent the wafer from sticking to the epitaxial ring 400 during vapor deposition, and can also improve the service life of the epitaxial ring 400; and the extension part deviates from the axial position of the lifting base 300 and extends upwards into the half-enclosed space of the movable ring 600, so that the heat conduction of the lifting base 300 can be accelerated to rapidly reduce the temperature of the wafer, and the deposited particles can be prevented from being sputtered to the bottom of the cavity 100 in the deposition process.
In practical application, lift base 300 is located the cavity for bear the weight of the wafer and drive the wafer and reciprocate, and among the deposition particle sputtering process, wafer surface temperature sharply risees, through epitaxial ring 400 with the heat as fast as possible transmit chamber wall baffle 500 on, distribute away through switching ring flange 200 again, realize rapid cooling's effect, thereby epitaxial ring 400 can accelerate lift base 300's heat-conduction and reduce the wafer temperature fast promptly. Can be with activity ring 600 jack-up when lift base 300 drives epitaxial ring 400 and upwards removes, can drag and drop activity ring 600 to the kink 502 when lift base 300 drives epitaxial ring 400 and downwards moves on, and in the whole motion process, activity ring 600 all can guarantee that the deposition particle can't sputter to the cavity 100 bottom in the deposition process.
By way of example, the extension 202 is a hollow circular cylinder having an inner diameter at an upper end that is smaller than an inner diameter at a lower end of the hollow circular cylinder.
Specifically, referring to fig. 4, the inner diameter of the upper end of the extending portion 202 is slightly smaller than the inner diameter of the lower end, so that a certain gap 700 is formed between the extending portion 202 and the vertical portion 501 of the cavity wall baffle 500, but the inner diameter of the extending portion 202 from top to bottom is not limited herein, and needs to be adjusted according to the actual use situation.
As an example, when the chamber is at room temperature, a gap 700 is provided between the inner wall of the extension portion 202 and the outer wall of the chamber wall baffle 500, and the gap 700 gradually increases from top to bottom.
Specifically, the temperature of the cooling pipeline inside the extension portion 202 rises after being heated in the vapor deposition process, so that the diameter of the inner ring of the extension portion 202 is reduced after being heated and expanded and the outer wall of the cavity wall baffle 500 is squeezed, until the inner wall of the extension portion 202 is tightly attached to the outer wall of the cavity wall baffle 500, the tight attachment state is more favorable for heat conduction and heat dissipation, but the specific size of the gap 700 is not limited herein.
The gap 700 has the following functions, on one hand, the installation and the disassembly of the cavity wall baffle 500 in the non-technological process are convenient; on the other hand, after the diameter of the inner ring is reduced after the extension part 202 is heated and expanded, the outer wall of the cavity wall baffle 500 is excessively extruded to cause deformation and even damage of the cavity wall baffle 500; simultaneously, gap 700 not only can prevent that extension 202 from extruding chamber wall baffle 500 from the upper end after because of being heated the inflation by the design of top to bottom crescent, but also can make extension 202 inner wall extrude the more fastening of laminating behind the chamber wall baffle 500 outer wall, more be favorable to heat-conduction and heat dissipation, also solved among the prior art because of expend with heat and contract with cold principle lead to the cooling external member can't with by the cooling external member hug closely influence heat-conduction's problem.
As an example, the cooling pipeline of the adapter 201 is a ring pipeline, and the ring pipeline is wound along the circumferential direction inside the adapter 201.
Specifically, a schematic structural diagram of the ring pipeline inside the adapter 201 is not shown, the ring pipeline is wound around the inner ring circumference inside the adapter 201 from top to bottom, and specific winding intervals and the like of the ring pipeline are not limited herein.
As an example, the cooling pipeline of the extension portion 202 includes a plurality of V-shaped pipelines, the plurality of V-shaped pipelines are sequentially arranged around the inside of the extension portion 202, and two adjacent V-shaped pipelines are interconnected and run through to form a V-shaped cooling pipeline that is interconnected and run through in a V-shape.
As an example, an inlet pipeline is further disposed in the adaptor portion 201, the inlet pipeline is connected to and communicated with both the annular pipeline and the V-shaped pipeline, and after the cooling liquid is introduced from the inlet pipeline, the cooling liquid flows along the annular pipeline into the adaptor portion 201, and flows along the V-shaped pipeline into the extension portion 202.
Specifically, after the cooling liquid is introduced from the inlet pipeline, the cooling liquid enters the interior of the adapter 201 along the annular pipeline to cool the upper end position of the cavity wall baffle 500; the cooling liquid is introduced from the inlet pipeline and then enters the interior of the extension part 202 along the V-shaped pipeline to cool the middle-lower end position of the cavity wall baffle 500; however, the specific arrangement position and structure of the inlet pipeline and the connection and communication manner between the inlet pipeline and the annular pipeline and the V-shaped pipeline are not limited herein.
As an example, each V-shaped pipe includes a pipe connection port and pipes disposed at both ends of the pipe connection port, and each pipe connection port is disposed along the circumferential direction of the bottom end of the extension portion 202.
Specifically, the pipeline connector is provided at the bottom of extension 202 deviating from switching portion 201 one end, and the pipeline connector is provided with a plurality ofly, and distance and open-ended size between every two adjacent pipeline connectors do not all excessively restrict, set up according to the cooling demand of reality, consequently, the specific shape of every V type pipeline is inconsistent, does not do excessively restrict here yet.
It should be noted that the pipeline connectors are convenient to process and produce V-shaped pipelines, after the V-shaped pipelines are processed, the pipeline connectors are physically sealed, but the two ends of all the V-shaped pipelines are ensured to be connected and communicated in a V shape after passing through the pipeline connectors, and are sequentially arranged in the extension part 202 until the extension part is connected and communicated with the inlet pipeline arranged on the switching part 201, so that the problem of high processing difficulty of the cooling kit in the prior art is solved, and the cooling effect of the V-shaped pipelines is better than that of the conventional parallel arrangement; however, it is specifically related to how the V-shaped pipeline and the inlet pipeline are directly connected and communicated, and details are not repeated herein, and the conventional method can be implemented.
In the embodiment of the present invention, the cooling pipeline is disposed inside the adapting portion 201 and the extending portion 202, so as to solve the problem of complex manufacturing process for designing a large-area cooling pipeline in the cavity wall in the prior art, and solve the problem of heat expansion and cold contraction deformation of the cavity wall caused by expansion of the cooling pipeline after heat absorption, which leads to the fact that the deformed cavity wall cannot be tightly attached to the cooled external member, thereby affecting heat conduction.
In summary, the cooling pipelines are arranged inside the switching part and the extending part of the switching flange plate, so that the chamber can be cooled rapidly; the pipeline connecting port and the V-shaped pipeline are arranged on the extension part, the pipeline connecting port is convenient to process and generate the V-shaped pipeline, so that the problem that the processing difficulty of the cooling sleeve is high is solved, and the cooling effect of the V-shaped pipeline is better than that of the V-shaped pipeline arranged in a traditional parallel mode; according to the invention, after the extension part is heated and expanded, the diameter of the inner ring is reduced and the outer wall of the cavity wall baffle is extruded until the inner wall of the extension part is tightly attached to the outer wall of the cavity wall baffle, so that heat conduction and heat dissipation are facilitated; in addition, a gap is reserved between the inner wall of the extension part and the outer wall of the cavity wall baffle, so that on one hand, the installation and the disassembly operation of the cavity wall baffle are convenient, and on the other hand, the diameter of the inner ring of the extension part can be prevented from being reduced after the extension part is heated and expanded, and the cavity wall baffle is prevented from being deformed, arranged and damaged due to excessive extrusion on the outer wall of the cavity wall baffle; the gap is gradually increased from the top end to the bottom end, so that the cavity wall baffle can be prevented from being extruded from the upper end after the extension part is heated and expanded, the inner wall of the extension part can be attached to the outer wall of the cavity wall baffle in a manner of extruding, and meanwhile, the extension part and the cavity wall baffle have larger contact area, so that the rapid heat transfer is facilitated, and the heat conduction efficiency and the heat dissipation efficiency are higher; the epitaxial ring can accelerate the heat conduction of the lifting base so as to quickly reduce the temperature of the wafer and prevent deposited particles from being splashed to the bottom of the cavity in the deposition process; the equipment also comprises a movable ring, wherein the movable ring is reversely buckled above the bent part and the epitaxial ring of the cavity wall baffle plate, so that the effect of accelerating heat conduction can be realized, and deposited particles can be prevented from being sputtered to the bottom of the cavity through a gap between the epitaxial ring and the bent part in the deposition process; when the lifting base drives the extension ring to move upwards, the movable ring can be jacked up, when the lifting base drives the extension ring to move downwards, the movable ring can be dragged and dropped onto the bent part, and the movable ring can ensure that deposited particles cannot be sputtered to the bottom of the cavity in the whole movement process; meanwhile, in the sputtering process of the deposited particles, the surface temperature of the wafer is sharply increased, heat is transferred to the cavity wall baffle as soon as possible through the epitaxial ring, and then the heat is dissipated through the adapter flange plate to achieve the effect of rapid cooling. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A physical vapor deposition apparatus for increasing chamber cool down, the apparatus comprising:
a cavity;
the adapter flange is arranged on the cavity, a cavity is formed between the adapter flange and the cavity, the adapter flange comprises an adapter part and an extension part, the outer ring edge of the bottom end of the adapter part is fixed at the top end of the cavity, and the extension part is arranged below the adapter part and extends into the cavity;
the cooling pipeline is respectively arranged inside the switching part and the extending part and is used for rapidly cooling the cavity;
the lifting base is positioned in the cavity and used for bearing the wafer and driving the wafer to move up and down;
the epitaxial ring is arranged on the periphery of the lifting base and is far away from the sputtering surface of the wafer;
the cavity wall baffle is positioned on the periphery of the extension ring, the outer ring edge at the upper end of the cavity wall baffle is fixed on the inner ring edge at the top end of the switching part, and the cavity wall baffle is vertically arranged downwards and positioned on the inner side of the extension part.
2. The physical vapor deposition apparatus for accelerating chamber cool-down according to claim 1, wherein: the cavity wall baffle comprises a vertical part and a bending part, the outer ring edge at the upper end of the vertical part is fixedly connected with the inner ring edge at the upper end of the switching part, and the lower end of the vertical part extends downwards to shield the inner wall of the cavity; the bending part extends towards the inside of the cavity and extends upwards in a semi-surrounding manner.
3. The physical vapor deposition apparatus for accelerating chamber cool-down according to claim 2, wherein: the equipment still includes the activity ring, the activity ring is half encirclement form and downwardly extending, the activity ring back-off in the kink with the extension ring top, and with the kink the horizontal projection partial coincidence of extension ring.
4. The physical vapor deposition apparatus for accelerating chamber cool-down according to claim 3, wherein: the outer extension ring part deviates from the axis position of the lifting base and extends upwards into the half-surrounding space of the movable ring.
5. The physical vapor deposition apparatus for accelerating chamber cool-down according to claim 1, wherein: the extension part is a hollow circular column, and the inner diameter of the upper end of the hollow circular column is smaller than that of the lower end of the hollow circular column.
6. The physical vapor deposition apparatus for accelerating chamber cool-down according to claim 1, wherein: when the chamber is in a room temperature state, a gap is formed between the inner wall of the extension part and the outer wall of the chamber wall baffle, and the gap is gradually increased from top to bottom.
7. The physical vapor deposition apparatus for accelerating chamber cool-down according to claim 1, wherein: the cooling pipeline inside the switching portion is an annular pipeline, and the annular pipeline is wound along the circumferential direction inside the switching portion.
8. The physical vapor deposition apparatus for accelerating chamber cool-down according to claim 7, wherein: the cooling pipeline inside the extension part comprises a plurality of V-shaped pipelines, the V-shaped pipelines are sequentially arranged around the inside of the extension part, and the two adjacent V-shaped pipelines are mutually connected and communicated to form a V-shaped cooling pipeline which is mutually connected and communicated in a V shape.
9. The physical vapor deposition apparatus for accelerating chamber cool-down according to claim 8, wherein: an inlet pipeline is further arranged in the switching portion, the inlet pipeline is connected with the annular pipeline and the V-shaped pipeline in a penetrating mode, after cooling liquid is introduced from the inlet pipeline, the annular pipeline enters the interior of the switching portion in a sequential extending mode, and the V-shaped pipeline enters the interior of the extending portion in a sequential extending mode.
10. The physical vapor deposition apparatus for accelerating chamber cooling according to claim 8, wherein: each V-shaped pipeline comprises a pipeline connecting port and pipelines arranged at two ends of the pipeline connecting port, and each pipeline connecting port is arranged along the circumferential direction of the bottom end of the extension part.
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| CN202210808343.5A CN114875362A (en) | 2022-07-11 | 2022-07-11 | Physical vapor deposition equipment for accelerating cooling of cavity |
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Application publication date: 20220809 |