CN221141845U - Heat dissipation bearing plate for sputtering equipment - Google Patents
Heat dissipation bearing plate for sputtering equipment Download PDFInfo
- Publication number
- CN221141845U CN221141845U CN202322747785.6U CN202322747785U CN221141845U CN 221141845 U CN221141845 U CN 221141845U CN 202322747785 U CN202322747785 U CN 202322747785U CN 221141845 U CN221141845 U CN 221141845U
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- Prior art keywords
- heat
- wafer
- tray
- sputtering
- bearing plate
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 24
- 230000017525 heat dissipation Effects 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052802 copper Inorganic materials 0.000 abstract description 10
- 239000010949 copper Substances 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The utility model belongs to the technical field of chip manufacturing, and particularly relates to a radiating wafer bearing plate for sputtering equipment. The radiating fins are radially arranged, the tops of the radiating fins are connected with the main body of the chip tray, and the radiating fins are not contacted with the inner side wall of the main body of the chip tray. The utility model relates to a cooling-free running environment of a wafer bearing tool, which can ensure that heat generated in the process does not cause obvious adverse effect on the process result of a device. The utility model obviously increases the heat suppressing and radiating capacity of the sputtering tray, effectively eliminates the problem of overhigh temperature of the substrate when the traditional copper tray is subjected to long-time high-power sputtering, ensures the surface temperature of the sputtering substrate and ensures the performance of the substrate.
Description
Technical Field
The utility model relates to a radiating bearing plate for sputtering equipment, and belongs to the technical field of chip manufacturing.
Background
The magnetron sputtering technology is largely adopted in the manufacturing process of semiconductor devices, and the metal electrode manufactured by the sputtering technology has the advantages of high speed and high quality, and especially has the technical advantages which are not possessed by other technological methods in the preparation of alloy electrodes and refractory noble metal electrodes. The target is bombarded by Ar ion and the bombarded material is deposited on the surface of semiconductor substrate uniformly, so that refractory noble metal or alloy material with different components may be made into film with different components.
The bombardment of the target by Ar ions will generate a certain amount of heat, which will be carried to the substrate along with the bombarded material molecules, and the accumulated heat will be increased continuously along with the increase of the film thickness, the color of the metal will be changed, and the physical properties will be slightly changed. Therefore, the film-bearing plate needs to be cooled to ensure that heat accumulated in the process is dissipated in time during sputtering.
The prior sputtering equipment cannot cool the wafer bearing plate due to technical reasons, and as mentioned above, the accumulation of heat can lead to inconsistent color and quality of the continuously processed wafer metal film. Most of the wafer trays are made of copper because of the relatively high thermal conductivity of copper. When the bottom of the bearing plate has cooling capacity, copper is used as a material with good heat conduction capacity, so that heat generated in the working process can be rapidly transferred from the top surface to the bottom surface of the bearing plate, and the heat is transferred out through heat exchange, so that the temperature of the semiconductor substrate is ensured to be within an acceptable range. However, copper will not be the most suitable susceptor material when the equipment is unable to transfer heat away from the susceptor because of its lower heat capacity and inability to absorb more heat generated during the process. In addition, the whole of the existing wafer bearing plate is of a solid structure, the bottom of the existing wafer bearing plate is conical, and the existing wafer bearing plate is in line contact when in contact with the clamping ring at the front end of the conveying arm, so that heat conduction is not facilitated. The present utility model has been made in view of the above problems.
Disclosure of utility model
According to the defects in the prior art, the technical problems to be solved by the utility model are as follows: the heat-dissipating support plate for the sputtering equipment is high in heat storage and fast in heat dissipation, and the problems that when the equipment does not have a heat-conducting system due to technical reasons and heat of the support plate cannot be transferred out, the heat of the support plate and the substrate can be continuously increased, and then the color and the quality of a metal film are affected are solved.
The utility model relates to a radiating wafer bearing plate for sputtering equipment, which comprises a round wafer bearing plate main body, wherein the wafer bearing plate main body is made of aluminum, the hollow inside of the wafer bearing plate main body is provided with an opening at the bottom, and a plurality of radiating fins are arranged in the hollow inside.
Copper is used as a carrier plate material in the prior art, because the copper has higher heat conductivity coefficient (377W/m.K), can conduct heat faster, has enough heat conductivity coefficient to conduct heat (230W/m.K) brought by sputtering after being changed into an aluminum material, has lighter weight under the same volume, is easier to disassemble and install, and most importantly, the aluminum material has larger specific heat capacity (0.88X 103J/(kg.DEG C)), which is more than 2 times that of the copper (0.39X 10X 3J/(kg.DEG C) serving as the traditional material, and can absorb heat generated in the process to prevent the carrier plate from heating too fast.
In addition, a plurality of radiating fins are radially arranged, the top of each radiating fin is connected with the main body of the chip tray, and the radiating fins are not contacted with the inner side wall of the main body of the chip tray, so that the contact area between the chip tray and air is greatly increased, and the effective radiating area is greatly increased.
Preferably, the outer ends of the radiating fins are formed with downward protrusions.
The bottom of the wafer bearing plate main body is provided with the bearing edge and the positioning edge which are arranged around the bottom of the wafer bearing plate main body, the bearing edge is positioned above the positioning edge, and the diameter of the bearing edge is larger than that of the positioning edge, so that the wafer bearing plate main body can be clamped at the head end of the conveying arm, as shown in fig. 7 and 8, the wafer bearing plate and the conveying arm are changed from linear contact to surface contact, the heat conduction efficiency is improved, and the heat dissipation of the wafer bearing plate is facilitated.
Preferably, the top of the bearing disc main body is provided with a baffle edge which winds the bearing disc main body in a circle, so that the substrates on the bearing disc main body can be prevented from falling off.
Preferably, one side of the substrate bearing disc main body is provided with an inclined slideway, and the baffle edge is opened at the slideway so as to facilitate the substrate to be taken down.
Further, the bottom of the slide way is provided with a vertical temporary storage groove, and the substrate can fall into the temporary storage groove and stand up after sliding down from the slide way, so that the substrate is convenient to clamp.
Compared with the prior art, the utility model has the following beneficial effects:
The utility model discloses a radiating wafer bearing plate for sputtering equipment, relates to an uncooled operation environment of a wafer bearing tool, and can ensure that heat generated in a process does not cause obvious adverse effect on a process result of a device. The utility model obviously increases the heat suppressing and radiating capacity of the sputtering tray, effectively eliminates the problem of overhigh temperature of the substrate when the traditional copper tray is subjected to long-time high-power sputtering, ensures the surface temperature of the sputtering substrate and ensures the performance of the substrate.
Drawings
FIG. 1 is a schematic perspective view of the present utility model;
FIG. 2 is a top view of the present utility model;
FIG. 3 is a side view of the present utility model;
FIG. 4 is a cross-sectional view of A-A of FIG. 2;
FIG. 5 is a schematic perspective view of the top view of the present utility model;
FIG. 6 is a schematic perspective view of the bottom view of the present utility model;
FIG. 7 is a schematic view of the structure of the transfer arm;
Fig. 8 is a schematic view of a carrier tray placed on a transport arm.
In the figure: 1. a wafer carrier main body; 2. a blocking edge; 3. a slideway; 4. a temporary storage groove; 5. a bearing edge; 6. a positioning edge; 7. a heat sink; 8. a transport arm.
Detailed Description
The utility model will be further illustrated with reference to specific examples.
However, the description of the present utility model is merely an embodiment of the structural or even functional description, and the scope of the claims of the present utility model is not limited by the embodiments described herein.
For example, the embodiments may have various modifications and various forms, and it is to be understood that the scope of the claims of the present utility model includes equivalents capable of realizing the technical idea.
As shown in fig. 1 to 8, the present embodiment is realized by the following technical scheme: including circular shape wafer bearing plate main part 1, wafer bearing plate main part 1 adopts the aluminium material, and its inside cavity bottom opening, hollow inside are equipped with a plurality of fin 7, and a plurality of fin 7 are radial arrangement, and fin 7 top is connected with wafer bearing plate main part 1, and fin 7 does not contact with wafer bearing plate main part 1's inside wall, and in addition, fin 7 outer end is formed with decurrent arch.
The bottom of the wafer bearing disc main body 1 is provided with a bearing edge 5 and a positioning edge 6 which are wound around the bearing edge, the bearing edge 5 is positioned on the positioning edge 6, and the diameter of the bearing edge 5 is larger than that of the positioning edge 6. The top of the film bearing disc main body 1 is provided with a baffle edge 2 which winds the periphery of the film bearing disc main body, one side of the film bearing disc main body 1 is provided with an inclined slide way 3, the baffle edge 2 is opened at the slide way 3, and the bottom of the slide way 3 is provided with a vertical temporary storage groove 4.
The aluminum material has lighter weight under the same volume, is easier to detach and install, has larger specific heat capacity, is twice more than that of the traditional material copper, can absorb more heat generated in the technical process, and prevents the chip bearing plate from heating up too fast.
Furthermore, the arrangement of the radiating fins with the special structure greatly increases the contact area between the bearing plate and the air, thereby greatly increasing the effective radiating area; in addition, the substrate tray and the conveying arm 8 are changed from linear contact to surface contact, so that the heat conduction efficiency is improved, and the heat dissipation efficiency of the substrate tray is further improved.
After the utility model is used, more heat can be absorbed in the same technological process, and the heat spreading speed is high, so that the temperature rise of the substrate is greatly reduced.
Of course, the foregoing is merely preferred embodiments of the present utility model and is not to be construed as limiting the scope of the embodiments of the present utility model. The present utility model is not limited to the above examples, and those skilled in the art will appreciate that the present utility model is capable of equally varying and improving within the spirit and scope of the present utility model.
Claims (7)
1. The utility model provides a heat dissipation wafer bearing plate for sputtering equipment, includes circular wafer bearing plate main part (1), and its characterized in that, wafer bearing plate main part (1) adopt aluminium material, and its inside cavity bottom opening is equipped with a plurality of fin (7) in the hollow inside.
2. The heat-dissipating carrier plate for a sputtering apparatus according to claim 1, wherein the plurality of heat-dissipating fins (7) are arranged radially, the top of the heat-dissipating fins (7) is connected to the carrier plate body (1), and the heat-dissipating fins (7) are not in contact with the inner side wall of the carrier plate body (1).
3. The heat sink tray for a sputtering apparatus according to claim 2, wherein the outer ends of the heat sink (7) are formed with downward protrusions.
4. The heat dissipation wafer carrier for sputtering equipment according to claim 1, wherein the bottom of the wafer carrier main body (1) is provided with a supporting edge (5) and a positioning edge (6) around the bottom, the supporting edge (5) is positioned above the positioning edge (6), and the diameter of the supporting edge (5) is larger than that of the positioning edge (6).
5. The heat dissipation wafer tray for sputtering equipment according to claim 1, wherein the top of the wafer tray main body (1) is provided with a baffle edge (2) around the top of the wafer tray main body.
6. The heat dissipation wafer tray for sputtering equipment according to claim 5, wherein an inclined slide way (3) is arranged on one side of the wafer tray main body (1), and the blocking edge (2) is opened at the slide way (3).
7. The heat dissipation chip tray for sputtering equipment according to claim 6, wherein the bottom of the slideway (3) is provided with a vertical temporary storage groove (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322747785.6U CN221141845U (en) | 2023-10-12 | 2023-10-12 | Heat dissipation bearing plate for sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322747785.6U CN221141845U (en) | 2023-10-12 | 2023-10-12 | Heat dissipation bearing plate for sputtering equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221141845U true CN221141845U (en) | 2024-06-14 |
Family
ID=91382867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322747785.6U Active CN221141845U (en) | 2023-10-12 | 2023-10-12 | Heat dissipation bearing plate for sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221141845U (en) |
-
2023
- 2023-10-12 CN CN202322747785.6U patent/CN221141845U/en active Active
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| GR01 | Patent grant |