CN217202937U - Bearing structure and radio frequency sputtering coating equipment - Google Patents
Bearing structure and radio frequency sputtering coating equipment Download PDFInfo
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- CN217202937U CN217202937U CN202122662976.3U CN202122662976U CN217202937U CN 217202937 U CN217202937 U CN 217202937U CN 202122662976 U CN202122662976 U CN 202122662976U CN 217202937 U CN217202937 U CN 217202937U
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Abstract
The embodiment of the application discloses bearing structure, bearing structure is applied to radio frequency sputtering coating equipment, radio frequency sputtering coating equipment is used for sputtering the wafer with target ion in order to form the film, bearing structure includes: a base station; and the metal cold plate is arranged on the base platform, is used for bearing the wafer and is used for being attached to the wafer. According to the embodiment of the application, the bearing object for bearing the wafer is set to be the metal cold plate attached to the wafer, the metal cold plate can transfer heat, the influence of high temperature on the coating quality is reduced, and the quality of the wafer coating is improved.
Description
Technical Field
The application relates to the technical field of coating processing equipment, in particular to a bearing structure and radio frequency sputtering coating equipment.
Background
With the development of science and technology, chips made of wafers have become an indispensable part of people in producing living products, such as chips used by computers, mobile phones, automobiles, and the like. During the manufacturing process of the wafer, including the coating of the wafer, when the rf sputtering coating process is used, heat is generally generated, and the heat affects the quality of the wafer coating.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application provides a bearing structure and radio frequency sputtering coating equipment, through the cold dish of the metal that sets up the bearing thing that will bear the weight of the wafer into laminating mutually with the wafer, the cold dish of metal can transfer the heat, and then reduces the influence of high temperature to the coating film quality, improves the quality of wafer coating film.
In a first aspect, an embodiment of the present application provides a bearing structure, which is applied to an rf sputtering apparatus, where the rf sputtering apparatus is configured to sputter target ions onto a wafer to form a thin film, and the bearing structure includes: a base station; and the metal cold plate is arranged on the base station, is used for bearing the wafer and is used for being attached to the wafer.
Based on this application embodiment, the cold dish of metal has higher heat conductivity, and it is when the cold dish of metal is directly laminated with the wafer, and the heat can be followed the wafer and transferred to the cold dish of metal, and then the temperature between balanced cold dish of metal and the wafer to the realization is to the cooling and the cooling of wafer, avoids the coarsening of film granule, produces pinhole column structure, forms the film of higher density, improves the quality of film.
In some embodiments, a heat dissipation pipeline for dissipating heat is arranged in the metal cold plate.
Based on the above embodiment, the heat dissipation pipeline is used for dissipating heat, and can dissipate heat transferred by the metal cold plate.
In some embodiments, the heat dissipation pipeline is arranged in a bent manner inside the metal cold plate.
Based on the above embodiment, the heat dissipation pipeline is arranged in the metal cold plate in a bending manner, so that the contact area between the heat dissipation pipeline and the metal cold plate can be increased, and the heat dissipation effect of the heat dissipation pipeline is enhanced.
In some embodiments, the heat dissipation pipeline is spirally arranged, or the heat dissipation pipeline is arranged in a winding manner.
Based on above-mentioned embodiment, be the heliciform with the heat dissipation pipeline and set up, perhaps be circuitous form setting, can be so that the area of contact of heat dissipation pipeline and metal cold plate increases, and the speed that the heat effluvium through the heat dissipation pipeline accelerates, is favorable to the cooling and the cooling of wafer, and then is favorable to forming the film of higher density, improves the quality of film.
In some embodiments, the carrying structure further includes a driving element, which is in communication with the heat dissipation pipeline and is used for controlling the circulation of the cooling medium in the heat dissipation pipeline.
Based on the above embodiment, the driving element may be communicated with the heat dissipation pipeline, and the circulation of the cooling medium in the heat dissipation pipeline is controlled, so as to realize the heat dissipation function of the heat dissipation pipeline, and the circulation heat dissipation may be realized by the control of the driving element, so as to maintain the temperature of the metal cold plate
In some embodiments, when the cooling medium is cooling liquid, the driving element is a water pump communicated with a water tank; when the cooling medium is cooling gas, the driving element is an air pump communicated with the external environment.
Based on the above embodiment, the water pump controls the cooling liquid to circulate in the heat dissipation pipeline and the water tank, or the air pump controls the cooling gas to circulate in the heat dissipation pipeline and the external environment, so that the heat is dissipated circularly, the metal cooling disc can maintain a lower temperature, and the metal cooling disc can transfer the wafer to the heat dissipation pipeline.
In some of these embodiments, the metal cold plate comprises: the working part is used for bearing the wafer; the connecting part is arranged around the periphery of the working part, is connected with the working part and is in threaded connection with the base station.
Based on above-mentioned embodiment, the cold dish of metal includes work portion and connecting portion, and the work portion bears the wafer, and connecting portion enclose to establish in work portion periphery and be connected with work portion, set up connecting portion and base station into threaded connection for the work portion can fix on the base station more steadily, and can avoid the gap between cold dish of metal and the base station as far as possible, and then the wafer coating film that is located the cold dish of metal.
In some embodiments, the metal cold plate has a carrying surface for carrying the wafer, and the thickness of the metal cold plate in a direction perpendicular to the carrying surface is in a range of 4.5mm to 5.5 mm.
Based on the embodiment, the thickness range of the metal cold plate is set to be 4.5mm-5.5mm in the direction perpendicular to the bearing surface, so that the heat transfer efficiency of the metal cold plate can be ensured, the heat dissipation pipeline can be better installed, and the heat of the heat dissipation pipeline can be conveniently dissipated.
In some of these embodiments, the metal cold plate is a cylinder, and the diameter of the metal cold plate ranges from 290mm to 310 mm.
Based on the above embodiment, in order to fit the cylindrical wafer, the metal cold plate may be set as a cylinder; in order to better match the coating of the wafer and better carry the wafer, the diameter of the metal cold plate can be in the range of 290mm-310 mm.
In a second aspect, an embodiment of the present application provides an rf sputtering coating apparatus, including: an apparatus body having a sputtering chamber; the bearing structure is arranged in the sputtering chamber. The bearing structure comprises a base platform and a metal cold plate, wherein the base platform is used for supporting the metal cold plate; the metal cold plate is fixed on the base station, can be used for bearing the wafer, and the metal cold plate can laminate mutually with the wafer. The metal cold plate has higher thermal conductivity, and when the metal cold plate is directly attached to the wafer, the heat can be transferred to the metal cold plate from the wafer, so that the temperature between the metal cold plate and the wafer is balanced, and the wafer is cooled. According to the embodiment of the application, the metal cold plate attached to the wafer is arranged, so that the coarsening of film particles of the wafer is avoided, a pinhole-shaped structure is generated, a film with higher density is formed, and the quality of the film is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional structural view of a load bearing structure provided in an embodiment of the present application;
FIG. 2 is another schematic cross-sectional structural view of a load bearing structure provided in an embodiment of the present application;
FIG. 3 is a schematic cross-sectional view of a metal cold plate according to an embodiment of the present application;
FIG. 4 is another schematic cross-sectional structural view of a metal cold plate provided in an embodiment of the present application;
fig. 5 is a schematic cross-sectional structural diagram of an rf sputtering coating apparatus provided in an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear, the embodiments of the present application will be further described in detail in the following with reference to the accompanying drawings.
Where the following description refers to the accompanying drawings, the same numbers in different drawings identify the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the application, as detailed in the claims that follow.
In the description of the present application, it is to be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art. In addition, in the description of the present application, "a plurality" means two or more unless otherwise specified. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
With the development of science and technology, chips made of wafers have become an indispensable part of people in producing living products, such as chips used by computers, mobile phones, automobiles, and the like. In the related technology, when the radio frequency sputtering coating process is adopted to coat the wafer, the surface temperature of a thin film deposited on the surface of the wafer rises due to continuous bombardment of target ions, so that the particles of the thin film are coarsened, the structure is loose, and the structure is relaxed.
In a first aspect, as shown in fig. 1, an embodiment of the present application provides a bearing structure 10, where the bearing structure 10 includes a base platform 100 and a metal cold plate 200, where the base platform 100 is used to support the metal cold plate 200; the metal cooling plate 200 is fixed on the base 100, the metal cooling plate 200 can be used for carrying a wafer, and the metal cooling plate 200 can be attached to the wafer.
The bearing structure 10 is applied to a radio frequency sputtering coating device 20, and the radio frequency sputtering coating device 20 is used for sputtering target ions to a wafer to form a thin film, specifically, the radio frequency sputtering coating uses positive ions in radio frequency discharge plasma to bombard a target, and sputtering target atoms, and the target atoms are deposited on the surface of the wafer to form the thin film. The thickness of the film is increased along with the increase of the deposited target atoms, the bombardment time of the plasma is longer, the temperature of the surface of the film is increased due to the continuous bombardment of the plasma, and the quality of the film is influenced by the temperature rise. The embodiment of the application is laminated with metal cold plate 200 and wafer mutually, there is the temperature difference metal cold plate 200 and wafer, the heat transfer of wafer is to metal cold plate 200, the temperature of wafer reduces, and then make the atom of film arrange can not receive the influence of thermal stress, also can not produce the distortion, the particle alligatoring can not take place for the film, the structure is loose, the structure can not take place to relax, thereby when follow-up wet etching clears away the photoresist, the pinhole column structure is also difficult to produce for the film, the film can have better density, the film quality promotes.
It is understood that the metal cold plate 200 has a high thermal conductivity, further, the metal cold plate 200 may be an alloy cold plate, and further, the metal cold plate 200 may be an aluminum alloy cold plate. When the metal cold plate 200 is directly attached to the wafer, heat can be directly transferred from the wafer to the metal cold plate 200, and then the temperature between the metal cold plate 200 and the wafer is balanced, so that the wafer is cooled and cooled, coarsening of film particles is avoided, a pin hole-shaped structure is generated, a film with high density is formed, and the quality of the film is improved.
In some embodiments, as shown in fig. 2, a heat dissipation pipe 300 may be disposed in the metal cold plate 200, and the heat dissipation pipe 300 is used for dissipating heat. It can be understood that, in order to increase the contact area between the heat dissipation pipeline 300 and the metal cold plate 200 and enhance the heat dissipation effect of the heat dissipation pipeline 300, the heat dissipation pipeline 300 may be disposed in a curved shape inside the metal cold plate 200.
Specifically, in some embodiments, as shown in fig. 3, the heat dissipation pipeline 300 may be disposed in a spiral shape, when the heat dissipation pipeline 300 is disposed in a spiral shape, a contact area between the heat dissipation pipeline 300 and the metal cold plate 200 is increased, a rate of heat dissipation through the heat dissipation pipeline 300 is increased, which is beneficial to cooling and cooling the wafer, and is further beneficial to forming a film with higher density and improving quality of the film.
In other embodiments, as shown in fig. 4, the heat dissipation pipeline 300 may also be disposed in a winding manner, when the heat dissipation pipeline 300 is disposed in a winding manner, a contact area between the heat dissipation pipeline 300 and the metal cold plate 200 is increased, and a rate of heat dissipation through the heat dissipation pipeline 300 is increased, which is beneficial to cooling and cooling the wafer, and is further beneficial to forming a film with higher density and improving quality of the film. It can be understood that the spiral heat dissipation pipe 300 and the winding heat dissipation pipe 300 can accelerate the heat dissipation of the wafer, and can be selected arbitrarily according to the actual situation.
In some embodiments, the supporting structure 10 further includes a driving element (not shown), which can communicate with the heat dissipation pipeline 300 and control the circulation of the cooling medium in the heat dissipation pipeline 300, so as to achieve the heat dissipation function of the heat dissipation pipeline 300.
Specifically, in some embodiments, the driving element may be a water pump connected to the water tank, and at this time, the cooling medium flowing through the heat dissipation pipeline 300 is a cooling liquid, and the cooling liquid may be water, or a liquid with a heat absorption property such as ethylene glycol. The water pump can control the cooling liquid to circulate in the heat dissipation pipeline 300 and the water tank, so as to realize the circulation and dissipation of heat, so that the metal cooling plate 200 can maintain a lower temperature, and the metal cooling plate 200 can transfer the wafer to the heat dissipation pipeline 300.
In other embodiments, the driving element may also be an air pump connected to the external environment, in which case, the cooling medium flowing through the heat dissipation pipeline 300 is cooling air, and the cooling air may be external air. The air pump can control the cooling air to circulate in the heat dissipation pipeline 300 and the external environment, so as to realize the circulation and dissipation of heat, so that the metal cooling plate 200 can maintain a lower temperature, and the metal cooling plate 200 can transfer the wafer to the heat dissipation pipeline 300. It can be understood that the circulation of heat dissipation can be realized by introducing the cooling liquid or the cooling gas into the heat dissipation pipeline 300, and the temperature of the metal cold plate 200 can be lowered, which can be arbitrarily selected according to actual situations.
In some embodiments, as shown in fig. 2, the metal cold plate 200 includes a working portion 210 for carrying a wafer and a connecting portion 220 surrounding the periphery of the working portion 210, wherein the connecting portion 220 is connected to the working portion 210, and further, in order to ensure the connection strength between the connecting portion 220 and the working portion 210, the connecting portion 220 may be integrally formed with the working portion 210.
Further, the connecting portion 220 can be in threaded connection with the base platform 100, specifically, one surface of the base platform 100 close to the metal cold plate 200 has a plurality of threaded holes, and the connecting portion 220 is provided with through holes corresponding to the positions of the threaded holes, and can pass through the through holes and be in threaded connection with the threaded holes through screw fasteners (not shown in the figure), so as to fix the metal cold plate 200 on the base platform 100. Further, the number of the through holes and the number of the threaded holes can be three, the three threaded holes are uniformly distributed along the circumferential direction of the base station 100, and then when the screw-connecting piece is matched with the threaded holes, the metal cold plate 200 can be stably fixed on the base station 100, and a gap between the metal cold plate 200 and the base station 100 can be avoided as much as possible, so that a wafer coating film on the metal cold plate 200 is influenced.
In some embodiments, the metal cold plate 200 has a carrying surface 230 for carrying a wafer, and in a direction perpendicular to the carrying surface 230, in order to ensure heat transfer efficiency of the metal cold plate 200 and to better install the heat dissipation pipe 300, a thickness of the metal cold plate 200 may range from 4.5mm to 5.5mm, and further, a thickness of the metal cold plate 200 may be 5 mm.
In some embodiments, the metal cold plate 200 may be a cylinder, a rectangular parallelepiped, or the like, and in order to better match with the film coating process of the wafer, the shape of the wafer may be a cylinder, and in order to better match with the diameter of the wafer and further carry the wafer, the diameter of the metal cold plate 200 may range from 290mm to 310 mm. It is understood that the metal cold plate 200 includes a working portion 210 and a connecting portion 220, and generally speaking, the diameter of a wafer is 200mm, 300mm, etc., in this embodiment, the diameter of the wafer is 300mm, and the diameter of the working portion 210 may be the same as the diameter of the wafer in order to match the coating of the wafer, that is, the diameter of the working portion 210 is 300mm, the diameter of the connecting portion 220 is at least larger than the diameter of the working portion 210, and the diameter of the connecting portion 220 may be 310 mm.
In a second aspect, the present embodiment provides an rf sputtering coating apparatus 20, wherein the rf sputtering coating process is one of PVD (physical vapor deposition), and target ions are sputtered onto a wafer to form a thin film by using an ac power source. In the embodiments of the present application, the target is an insulating target.
As shown in fig. 5, the radio frequency sputtering coating apparatus 20 includes an apparatus main body 30 and a carrying structure 10, the apparatus main body 30 having a sputtering chamber 31; the carrier structure 10 is disposed within the sputtering chamber 31. The bearing structure 10 comprises a base platform 100 and a metal cold plate 200, wherein the base platform 100 is used for supporting the metal cold plate 200; the metal cooling plate 200 is fixed on the base 100, the metal cooling plate 200 can be used for carrying a wafer, and the metal cooling plate 200 can be attached to the wafer.
It can be understood that the metal cold plate 200 has higher thermal conductivity, and when the metal cold plate 200 is directly attached to the wafer, heat can be transferred from the wafer to the metal cold plate 200, so as to balance the temperature between the metal cold plate 200 and the wafer, thereby cooling and cooling the wafer. According to the embodiment of the application, the metal cold plate 200 attached to the wafer is arranged, so that the coarsening of film particles of the wafer is avoided, a pin hole-shaped structure is generated, a film with higher density is formed, and the quality of the film is improved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A bearing structure is applied to radio frequency sputtering coating equipment, wherein the radio frequency sputtering coating equipment is used for sputtering target ions to a wafer to form a thin film, and the bearing structure comprises:
a base station;
and the metal cold plate is arranged on the base station, is used for bearing the wafer and is used for being attached to the wafer.
2. The load bearing structure of claim 1, wherein heat dissipation piping is disposed within said metal cold plate for dissipating heat.
3. The load bearing structure of claim 2, wherein said heat dissipation conduit is disposed in a curved configuration within said metal cold plate.
4. The load bearing structure of claim 2, wherein said heat dissipating circuit is disposed in a spiral configuration or said heat dissipating circuit is disposed in a serpentine configuration.
5. The load bearing structure of claim 2, further comprising:
and the driving element is communicated with the heat dissipation pipeline and is used for controlling the circulation of a cooling medium in the heat dissipation pipeline.
6. The load bearing structure of claim 5,
when the cooling medium is cooling liquid, the driving element is a water pump communicated with the water tank;
when the cooling medium is cooling gas, the driving element is an air pump communicated with the external environment.
7. The load bearing structure of claim 1 wherein said metal cold plate comprises:
the working part is used for bearing the wafer;
the connecting part is arranged around the periphery of the working part, is connected with the working part and is in threaded connection with the base station.
8. The carrier structure according to any one of claims 1 to 7, wherein the metal cold plate has a carrying surface for carrying the wafer, and the metal cold plate has a thickness in a range of 4.5mm to 5.5mm in a direction perpendicular to the carrying surface.
9. The load bearing structure of any of claims 1-7, wherein said metal cold plate is a cylinder, said metal cold plate having a diameter in the range of 290mm-310 mm.
10. An rf sputter coating apparatus, comprising:
an apparatus body having a sputtering chamber;
the load bearing structure of any of claims 1-9 disposed within the sputtering chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122662976.3U CN217202937U (en) | 2021-11-02 | 2021-11-02 | Bearing structure and radio frequency sputtering coating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122662976.3U CN217202937U (en) | 2021-11-02 | 2021-11-02 | Bearing structure and radio frequency sputtering coating equipment |
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| Publication Number | Publication Date |
|---|---|
| CN217202937U true CN217202937U (en) | 2022-08-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122662976.3U Active CN217202937U (en) | 2021-11-02 | 2021-11-02 | Bearing structure and radio frequency sputtering coating equipment |
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| CN (1) | CN217202937U (en) |
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2021
- 2021-11-02 CN CN202122662976.3U patent/CN217202937U/en active Active
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